CN114464689B - Photovoltaic cell, preparation method thereof and photovoltaic module - Google Patents
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- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The embodiment of the application relates to the field of solar energy, and provides a photovoltaic cell, a preparation method thereof and a photovoltaic module, wherein the photovoltaic cell comprises: a substrate, an emitter and a passivation layer sequentially stacked on a surface of one side of the substrate; the first doped region is at least positioned in part of the substrate, and the emitter and the first doped region have the same doping element; the second doped region is positioned on one side of the first doped region away from the substrate and is provided with a doped element, and the concentration of the doped element in the second doped region is higher than that in the first doped region; an electrode penetrating the passivation layer and part of the emitter and contacting the second doped region, the concentration of doping element at the surface of the second doped region contacting the electrode being greater than 5×10 19 atoms/cm 3 . The embodiment of the application is at least beneficial to improving the photoelectric conversion efficiency of the photovoltaic cell.
Description
Cross Reference to Related Applications
The application is a divisional application of China patent application with the application number of 202111132399.5, namely 'photovoltaic cell, preparation method thereof and photovoltaic module', and the application of 2021, 9 and 27 days.
Technical Field
The embodiment of the application relates to the field of solar energy, in particular to a photovoltaic cell, a preparation method thereof and a photovoltaic module.
Background
Photovoltaic cells are a type of semiconductor device that converts solar energy into electrical energy. Due to the need to have both good ohmic contact between the electrode and the emitter, and to improve the spectral response in the short wavelength band at the site of solar incidence, more and more manufacturers are beginning to apply selective emitter photovoltaic cells.
The selective emitter photovoltaic cell is mainly characterized in that the electrode area has high doping concentration, the illumination area has low doping concentration, and the purpose is to improve the passivation quality of the surface of a silicon wafer on the premise of not reducing the contact quality of an electrode and a semiconductor material, reduce the surface recombination of the silicon wafer and the emitter recombination, and improve the quantum response and the battery performance of a blue light wave band.
Currently, the core of selective emitter photovoltaic cells is the fabrication of selectively doped structures. However, due to the influence of the doping process, the composite damage of the partial region of the selective doping structure is larger, and the photoelectric conversion efficiency of the photovoltaic cell is affected.
Disclosure of Invention
The embodiment of the application provides a photovoltaic cell, a preparation method thereof and a photovoltaic module, which are at least beneficial to improving the photoelectric conversion efficiency of the photovoltaic cell.
An embodiment of the present application provides a photovoltaic cell, including: a substrate, an emitter and a passivation layer sequentially stacked on a surface of one side of the substrate; a first doped region at least in part of the substrate, the emitter and the first doped region having the same doping element; a second doped region located on a side of the first doped region away from the substrate and having the doping element, the doping element having a higher concentration in the second doped region than in the first doped region; an electrode penetrating the passivation layer and part of the emitter and contacting the second doped region, wherein the concentration of the doping element at the surface of the second doped region contacting the electrode is greater than 5×10 19 atoms/cm 3 。
In some embodiments, the photovoltaic cell further comprises: and a third doped region located between the first doped region and the second doped region and having the doping element, and a concentration of the doping element in the second doped region is higher than a concentration in the third doped region.
In some embodiments, the sum of the thickness of the second doped region and the thickness of the third doped region is 200nm to 1000nm in a direction in which the substrate points to the emitter.
In some embodiments, the thickness of the third doped region is 50nm to 200nm in a direction in which the substrate points toward the emitter.
In some embodiments, the sheet resistance of the first doped region is not higher than 100deg.OMEGA, and the sheet resistance of the second doped region is not higher than 70Ω.
In some embodiments, the width of the first doped region is 100um or greater in a direction perpendicular to the substrate pointing in the emitter direction.
In some embodiments, the orthographic projection of the first doped region on the substrate covers the orthographic projection of the electrode on the substrate.
In some embodiments, the electrode has a doping element, the mass concentration of the doping element in the electrode being less than 1%.
Correspondingly, the embodiment of the application also provides a preparation method of the photovoltaic cell, which comprises the following steps: providing a substrate; sequentially forming an emitter and a doped source layer on the surface of one side of the substrate, wherein the emitter and the doped source layer have the same doping element; processing a local area of the doping source layer by using laser to form a first doping area and a damaged area in the emitter and the substrate corresponding to the local area, wherein the first doping area is provided with the doping element; removing the doping source layer and the damaged region; forming a second doped region with the doping element on one side of the first doped region away from the substrate, wherein the concentration of the doping element in the second doped region is higher than that in the first doped region; and forming an electrode on one side of the second doped region far away from the first doped region, wherein the electrode penetrates through part of the emitter.
In some embodiments, after removing the damaged region, before removing the doping source layer, the method of manufacturing a photovoltaic cell further comprises: and oxidizing the surface of the first doped region exposed after the damaged region is removed to form a protective layer.
In some embodiments, the dopant source layer and the protective layer comprise a silicon oxide material comprising a phosphorus element, and the first doped region comprises a silicon material comprising a phosphorus element; in the step of removing the doping source layer, the protective layer is removed.
In some embodiments, the doping source layer and the protection layer are removed using a hydrofluoric acid solution.
In some embodiments, after removing the damaged region, before forming the second doped region, the method of fabricating the photovoltaic cell further comprises: and doping the surface of the first doped region exposed after the damaged region is removed to form a third doped region with the doping element.
In some embodiments, the step of forming the second doped region and the electrode comprises: forming a passivation layer on the first doped region and the surface of the emitter; forming a doped electrode with the doping element on one side of the passivation layer away from the emitter; sintering the doped electrode to form an electrode penetrating through the passivation layer, and forming a second doped region between the electrode and the first doped region.
Correspondingly, the embodiment of the application also provides a photovoltaic module, which comprises: a cell string formed by connecting a plurality of the photovoltaic cells described in any one of the above, or by connecting a plurality of the photovoltaic cells produced by the production method of the photovoltaic cells described in any one of the above; the packaging adhesive film is used for covering the surface of the battery string; and the cover plate is used for covering the surface of the packaging adhesive film, which is away from the battery strings.
The technical scheme provided by the embodiment of the application has at least the following advantages:
on the one hand, the concentration of the doping element in the second doping region is higher than that in the first doping region, so that the conductivity of the second doping region is improved, good ohmic contact is formed between the electrode and the second doping region, the contact resistance between the electrode and the second doping region is reduced, and more majority carriers are transmitted to the electrode of the photovoltaic cell; on the other hand, no damage region is arranged between the second doped region and the electrode, which is beneficial to reducing the defect state density between the electrode and the second doped region and reducing the recombination loss of carriers at the junction of the electrode and the second doped region. Therefore, the photovoltaic cell provided by the embodiment of the application is beneficial to reducing the recombination loss of carriers at the junction of the electrode and the second doped region and reducing the contact resistance between the electrode and the second doped region, so that the photoelectric conversion efficiency of the photovoltaic cell is improved as a whole.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which the figures of the drawings are not to be taken in a limiting sense, unless otherwise indicated.
Fig. 1 is a schematic structural diagram of a photovoltaic cell according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a photovoltaic cell according to an embodiment of the present disclosure;
fig. 3 to 8 are schematic structural diagrams corresponding to steps of a method for manufacturing a photovoltaic cell according to another embodiment of the present disclosure;
fig. 9 to 11 are schematic structural diagrams corresponding to steps of another method for manufacturing a photovoltaic cell according to another embodiment of the present disclosure;
fig. 12 is a schematic structural diagram of a photovoltaic module according to another embodiment of the present disclosure.
Detailed Description
As known from the background art, the photoelectric conversion efficiency of the photovoltaic cell needs to be improved.
It was found by analysis that in crystalline silicon photovoltaic cells, the homogeneously doped layer in contact with the electrode cannot meet the following two requirements simultaneously: on the one hand, the concentration of doping elements in the uniformly doped layer needs to be low to reduce auger recombination in the uniformly doped layer and to improve the spectral response of the photovoltaic cell to short wavelength bands by means of recombination centers, which are often impurity or defect centers with deeper bound energy levels (most likely near the center of the forbidden band); on the other hand, the concentration of the doping element in the uniformly doped layer needs to be high, so that ohmic contact is formed between the silicon wafer and the electrode. Therefore, the local doping technology is often adopted to realize selective doping, and the second doping is carried out on the uniformly doped layer contacted with the electrode, so that the concentration of the doping element in the uniformly doped layer which is not contacted with the electrode is not increased while the concentration of the doping element in the uniformly doped layer contacted with the electrode is increased, and the efficiency of the battery is improved.
However, due to the local doping technology, a damaged layer is formed on the surface of the silicon wafer, the interface state density on the surface of the damaged layer is high, the defect density in the damaged layer is high, the density of a composite center can be improved by the damaged layer and the damaged layer, so that the composite loss of carriers in the process of transmission between the damaged layer and the electrode is increased, the migration of majority carriers in the photovoltaic cell is not facilitated, and the photoelectric conversion efficiency of the photovoltaic cell is reduced.
The embodiment of the application provides a photovoltaic cell, a preparation method thereof and a photovoltaic module, wherein in the photovoltaic cell, on one hand, the concentration of a doping element in a second doping region is higher than that in a first doping region, so that the conductivity of the second doping region is improved, good ohmic contact is formed between an electrode and the second doping region, the contact resistance between the electrode and the second doping region is reduced, and more majority carriers are transmitted to the electrode of the photovoltaic cell; on the other hand, no damage region is arranged between the second doped region and the electrode, which is beneficial to reducing the defect state density between the electrode and the second doped region and reducing the recombination loss of carriers at the junction of the electrode and the second doped region. Therefore, the photovoltaic cell provided by the embodiment of the application is beneficial to reducing the recombination loss of carriers at the junction of the electrode and the second doped region and reducing the contact resistance between the electrode and the second doped region, so that the photoelectric conversion efficiency of the photovoltaic cell is improved as a whole.
Embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, as will be appreciated by those of ordinary skill in the art, in the various embodiments of the present application, numerous technical details have been set forth in order to provide a better understanding of the present application. However, the technical solutions claimed in the present application can be implemented without these technical details and with various changes and modifications based on the following embodiments.
An embodiment of the present application provides a photovoltaic cell, and fig. 1 is a schematic structural diagram of the photovoltaic cell provided in an embodiment of the present application; fig. 2 is a schematic structural diagram of a photovoltaic cell according to an embodiment of the present disclosure. It should be noted that, for simplicity of illustration, the texture of the substrate 100 and the emitter 101 is not drawn in fig. 1 and 2.
Referring to fig. 1, a photovoltaic cell provided by an embodiment of the present disclosure includes: a substrate 100, an emitter 101 and a passivation layer 104 sequentially stacked on a surface of one side of the substrate 100; a first doped region 111 located in a portion of the emitter 101 and a portion of the substrate 100, the emitter 101 and the first doped region 111 having the same doping element; a second doped region 141 located at a side of the first doped region 111 remote from the substrate 100 and having the same doping element as in the first doped region 111, the doping element having a higher concentration in the second doped region 141 than in the first doped region 111; an electrode 115 penetrating the passivation layer 104 and part of the emitter 101 and contacting the second doped region 141, the concentration of doping element at the surface of the second doped region 141 contacting the electrode 115 being greater than 5×10 19 atoms/cm 3 。
The concentration of the doping element in the second doped region 141 is higher than that in the first doped region 111, which is beneficial to improving the conductivity of the second doped region 141, so that a good ohmic contact is formed between the electrode 115 and the second doped region 141, and the contact resistance between the electrode 115 and the second doped region 141 is reduced, so that more majority carriers are transferred to the electrode 115 of the photovoltaic cell, and the photoelectric conversion efficiency of the photovoltaic cell is improved.
In some embodiments, the thickness of the second doped region 141 is less than 100nm in the direction of the substrate 100 toward the emitter 101, and the doping element concentration at the surface of the second doped region 141 contacting the electrode 115 is greater than 5×10 19 atoms/cm 3 In a depth of 100nm from the surface of the second doped region 141 away from the substrate 100 into the second doped region 141, the concentration of the doping element has a large influence on the contact performance between the electrode 115 and the second doped region 141, so that the concentration of the doping element in the second doped region 141 is increased, which is beneficial to ensuring the electrode 115 and the second dopingGood ohmic contact between the regions 141 and reduced contact resistance between the electrode 115 and the second doped region 141, thereby improving the photoelectric conversion efficiency of the photovoltaic cell.
In some embodiments, referring to fig. 2, the photovoltaic cell may further comprise: the third doped region 151 is located between the first doped region 111 and the second doped region 141 and has a doping element, and the concentration of the doping element in the second doped region 141 is higher than that in the third doped region 151.
Since the concentration of the doping element in the second doping region 141 is higher than that in the first doping region 111 and that in the third doping region 151, it is advantageous to further increase the concentration of the doping element in the second doping region 141 while ensuring good conductivity of the electrode 115, so as to further increase the conductivity of the second doping region 141, so that good ohmic contact is formed between the electrode 115 and the second doping region 141, the contact resistance between the electrode 115 and the second doping region 141 is reduced, and more majority carriers are transferred to the electrode 115 of the photovoltaic cell, thereby improving the photoelectric conversion efficiency of the photovoltaic cell.
In some embodiments, the sum of the thickness of the second doped region 141 and the thickness of the third doped region 151 may be 200nm to 1000nm, and in particular may be 400nm, 600nm, 800nm, in the direction in which the substrate 100 is directed toward the emitter 101.
In some embodiments, the thickness of the third doped region 151 may be 50nm to 200nm, specifically 70nm, 100nm, 130nm, 160nm, or the like in a direction in which the substrate 100 is directed toward the emitter 101.
It should be noted that, in fig. 2, taking the first doped region 111 being located in a portion of the emitter 101 and a portion of the substrate 100 as an example, the third doped region 151 is located only in the emitter 101, in practical application, the first doped region 111 may be located only in a portion of the substrate 100, and the third doped region 151 may be located in a portion of the emitter 101 and a portion of the substrate 100.
In some embodiments, the sheet resistance of the first doped region 111 is not higher than 100deg.OMEGA, for example, the sheet resistance of the first doped region 111 may be 70Ω to 100deg.OMEGA, and may be 75Ω, 80Ω, 85Ω, 90Ω, or 95Ω; the sheet resistance of the second doped region 141 is not higher than 70Ω, for example, the sheet resistance of the second doped region 141 may be 50Ω to 70Ω, and specifically may be 55Ω, 60deg.Ω, or 65Ω.
In some embodiments, the width of the first doped region 111 is 100um or more in a direction perpendicular to the direction of the substrate 100 pointing to the emitter 101. For example, the width of the first doped region 111 may be 100um to 120um, where the width of the first doped region 111 is within the range, which is favorable for aligning the electrode with the first doped region 111 when forming the electrode later, if the width of the first doped region 111 is less than 100um, misalignment between the electrode and the first doped region 111 is easily caused, and if the width of the first doped region 111 is greater than 120um, the duty ratio of the emitter 101 in the whole photovoltaic cell which is not subjected to laser treatment is reduced, so that the collection efficiency of the emitter 101 for photo-generated carriers is reduced. The width of the first doped region 111 may be 105um, 110um, 115um, or the like.
In some embodiments, the orthographic projection of the first doped region 111 onto the substrate 100 covers the orthographic projection of the electrode 115 onto the substrate 100. It should be noted that, the front projection of the second doped region 141 on the substrate 100 coincides with the front projection of the first doped region 111 on the substrate 100, so that the front projection of the second doped region 141 on the substrate 100 covers the front projection of the electrode 115 on the substrate 100, which is beneficial to ensuring that the electrode 115 is aligned with the second doped region 141, avoiding the misalignment between the electrode 115 and the second doped region 141, and improving the contact area between the electrode 115 and the second doped region 141.
In some embodiments, electrode 115 has a doping element, and the mass concentration of the doping element in electrode 115 is less than 1%. For example, the mass concentration of the doping element in the electrode 115 may be 0.01% to 1%, and in addition, the mass concentration of the silver element in the electrode 115 may be 80% to 90%, which is advantageous in providing the second doping region 141 with the doping element while ensuring good conductivity of the electrode 115. Wherein, the doping element can be phosphorus element.
In some embodiments, the passivation layer 104 may have a single-layer structure or a stacked-layer structure, and the material of the passivation layer 104 may include at least one of aluminum oxide, silicon dioxide, silicon nitride, and silicon oxynitride.
Wherein the photovoltaic cell may further comprise: a rear passivation layer located on a rear surface opposite to the front surface of the substrate 100. In some embodiments, the back passivation layer may have a single layer structure or a stacked layer structure, and the material of the back passivation layer includes at least one of aluminum oxide, silicon nitride, or silicon oxynitride.
In some embodiments, the concentration of doping element in emitter 101 is less than in first doped region 111, since the concentration of doping element in second doped region 141 is higher than in first doped region 111, the concentration of doping element in emitter 101 is much less than in second doped region 141, which facilitates reducing auger recombination and recombination by recombination centers in emitter 101, and improving the spectral response of the photovoltaic cell to the short wavelength band.
In some embodiments, the concentration of the doping element in the emitter 101 is smaller than that in the first doping region 111, and the concentration of the doping element in the emitter 101 is also smaller than that in the third doping region 151, and since the concentration of the doping element in the second doping region 141 is higher than that in the first doping region 111, the concentrations of the doping elements in the first doping region 111, the third doping region 151, and the second doping region 141 are all greater than that in the emitter 101, so that PN junctions are formed between the first doping region 111, the third doping region 151, and the second doping region 141 and the emitter 101 to improve the collection efficiency of the emitter 101 for photo-generated carriers, thereby improving the photoelectric conversion efficiency of the photovoltaic cell.
In summary, on the one hand, the concentration of the doping element in the second doped region 141 is higher than that in the first doped region 111, which is beneficial to improving the conductivity of the second doped region 141, so that good ohmic contact is formed between the electrode 115 and the second doped region 141, reducing the contact resistance between the electrode 115 and the second doped region 141, and enabling more majority carriers to be transferred to the electrode 115 of the photovoltaic cell; on the other hand, no damaged region is provided between the second doped region 141 and the electrode 115, which is favorable for reducing the defect state density between the electrode 115 and the second doped region 141 and reducing the recombination loss of carriers at the junction of the electrode 115 and the second doped region 141, thereby improving the photoelectric conversion efficiency of the photovoltaic cell as a whole.
The application also provides a preparation method of the photovoltaic cell, which is used for preparing the photovoltaic cell provided by the embodiment. Fig. 1 to 8 are schematic structural diagrams corresponding to steps of a method for manufacturing a photovoltaic cell according to another embodiment of the present disclosure; fig. 2 and fig. 9 to 11 are schematic structural diagrams corresponding to each step of another preparation method of a photovoltaic cell according to another embodiment of the present application. It should be noted that, for simplicity of illustration, the texture of the substrate 100 and the emitter 101 is not drawn in fig. 1 to 7.
Referring to fig. 1 to 11, a method of manufacturing a photovoltaic cell includes: providing a substrate 100; an emitter 101 and a doped source layer 102 are sequentially formed on a surface of one side of the substrate 100, the emitter 101 and the doped source layer 102 having the same doping element; processing a partial region of the doping source layer 102 using a laser to form a first doping region 111 and a damaged region 103 in the emitter 101 and the substrate 100 corresponding to the partial region, the first doping region 111 having a doping element; removing the doping source layer 102 and the damaged region 103; forming a second doped region 141 having a doping element at a side of the first doped region 111 remote from the substrate 100, and a concentration of the doping element in the second doped region 141 is higher than that in the first doped region 111; an electrode 115 is formed on a side of the second doped region 141 remote from the first doped region 111, the electrode 115 penetrating through a portion of the emitter 101.
The method of preparing photovoltaic cells is described in detail below by way of two examples.
In some embodiments, referring to fig. 1-8, a method of making a photovoltaic cell includes the steps of:
referring to fig. 3, a substrate 100 is provided; an emitter 101 and a dopant source layer 102 are sequentially formed on a surface of one side of the substrate 100, the emitter 101 and the dopant source layer 102 having the same doping element.
The substrate 100 has opposite front and rear surfaces, which may be light-receiving surfaces for a single-sided cell and backlight surfaces for a double-sided cell. In some embodiments, the substrate surface on which the emitter 101 and the dopant source layer 102 are formed is a front surface.
In some embodiments, the substrate 100 is a silicon substrate material, which may include one or more of monocrystalline silicon, polycrystalline silicon, amorphous silicon, or microcrystalline silicon; in other embodiments, the material of the substrate may also be elemental carbon, an organic material, or a multi-compound. The multi-component compounds may include, but are not limited to, perovskite, gallium arsenide, cadmium telluride, copper indium selenium, and the like. In addition, the front surface of the substrate 100 may be provided as a pyramid-shaped textured surface to reduce light reflection from the front surface, increase the absorption and utilization rate of light, and improve the conversion efficiency of the photovoltaic cell.
The doping elements in the emitter 101 and the dopant source layer 102 may be P-type doping elements (e.g., boron, aluminum, gallium, indium, thallium, etc.) or N-type doping elements (e.g., phosphorus, arsenic, antimony, bismuth, etc.). In addition, a PN junction is formed between the substrate 100 and the emitter 101. For example, the emitter 101 includes an N-type doping element, and the substrate 100 includes a P-type doping element; the emitter 101 includes a P-type doping element, and the substrate 100 includes an N-type doping element. In addition, the surface of the emitter 101 may be provided with a pyramid suede to reduce reflection of light by the surface of the emitter 101, increase absorption and utilization rate of light, and improve photoelectric conversion efficiency of the photovoltaic cell.
In some embodiments, the substrate 100 and the emitter 101 forming the pyramidal face may include the steps of:
an initial substrate is provided, the initial substrate is cleaned, and pyramid suede is prepared on the surface of one side of the initial substrate by adopting a wet chemical etching mode, so that a substrate 100 is formed. The pyramid suede can reduce the reflection of the initial substrate surface to light, so that the absorption and utilization rate of the initial substrate to the light is increased, and the conversion efficiency of the photovoltaic cell is improved. In addition, the substrate 100 may be an N-type semiconductor or a P-type semiconductor, and the substrate 100 will be described below as an example of the P-type semiconductor.
It should be noted that, in the embodiments of the present application, the specific operation manner of the texturing is not limited. For example, but not limited to, wet-process texturing may be performed, and when the initial substrate is P-type monocrystalline silicon, alkaline solutions such as sodium hydroxide solution may be used for texturing, which is advantageous for preparing pyramid-like microstructures due to the anisotropy of corrosion of the sodium hydroxide solution. The pyramid microstructure may be tetrahedral, approximately tetrahedral, pentahedral or approximately pentahedral, etc. structure; in addition, the texturing process can also be chemical etching, laser etching, mechanical method or plasma etching and the like, and the pyramid microstructure enables the paste to be better filled in the pyramid microstructure when the electrode is formed by screen printing metal paste, so that more excellent electrode contact is obtained, the series resistance of the battery can be effectively reduced, and the filling factor is improved. In addition, the overall refractive index of the photovoltaic cell can be reduced by 12% -15% by controlling the morphology of the pyramid-shaped microstructure.
Further, sequentially forming the emitter 101 and the dopant source layer 102 on the surface of the substrate 100 side may include the steps of:
a doping element diffusion process is performed on the surface of the substrate 100 having the pyramid-shaped textured surface.
In some embodiments, the substrate 100 is a P-type monocrystalline silicon substrate, and the front surface of the substrate 100 with pyramid-shaped texture is subjected to phosphorus diffusion treatment to form an N-type emitter, where the N-type emitter occupies part of the surface space of the front surface of the substrate 100, i.e., the N-type emitter is the substrate 100 with a higher phosphorus element content. It should be noted that, the phosphorus diffusion process may also form the doped source layer 102 on the surface of the emitter 101 away from the substrate 100, where the material of the doped source layer 102 is phosphosilicate glass. The emitter 101 and the substrate 100 corresponding to the local region may be doped with the dopant source layer 102 in the local region, and the dopant source layer 102 in other regions may be used as a mask layer when performing other process steps.
In a practical application scenario, since the substrates 100 are double-layered and inserted into one card slot to perform the phosphorus diffusion process, that is, the rear surface of one substrate 100 is abutted against the rear surface of the other substrate 100, a gap exists between the rear surfaces of the two substrates 100, so that an unnecessary and uneven emitter (not shown) and a doping source layer (not shown) are formed at the side surface of the substrate 100 and the edge of the rear surface in the process of forming the emitter 101 and the doping source layer 102 on the front surface of the substrate 100. The unnecessary doping source layer may be removed in a subsequent step of performing an alkali polishing process on the rear surface of the substrate 100. Wherein the phosphorus source used for the phosphorus diffusion treatment comprises phosphorus oxychloride.
Wherein, in the direction in which the substrate 100 points to the emitter 101, the thickness of the emitter 101 may be 100nm to 2000nm, and the thickness of the doping source layer 102 may be 20nm to 80nm.
Referring to fig. 4, a partial region of the dopant source layer 102 is processed using a laser to sequentially form a first doped region 111 and a damaged region 103 in the emitter 101 and the substrate 100 corresponding to the partial region, the first doped region 111 having the same doping element as the remaining emitter 101.
The following will describe the doping element as phosphorus element in detail.
By utilizing the characteristic of high laser energy density, the phosphorus element in the doped source layer 102 in the laser irradiation area is activated, even if more phosphorus element is in electrical activity, the temperature of the laser irradiation area is rapidly increased, and the diffusion of the phosphorus element in the electrical activity state is promoted, so that the concentration of the phosphorus element in the first doped area 111 is increased, the conductivity of the first doped area 111 is increased, and the transmission resistance between the electrode formed subsequently and the first doped area 111 is reduced.
In some embodiments, the laser has an energy density of 10 3 W/cm 3 ～10 5 W/cm 3 The pulse width of the laser is 1 ps-500 ns. In this way, it is advantageous to increase the energy of the laser irradiation region, to activate and diffuse more phosphorus element in the dopant source layer 102 into the emitter 101, to increase the doping concentration of phosphorus element in a portion of the emitter 101, to convert the portion of the emitter 101 into the first doped region 111 and the damaged region 103. Therefore, the concentration of the phosphorus element in the first doping region 111 is higher than that in the remaining emitter 101 that is not laser-treated, to form a PN junction between the first doping region 111 and the remaining emitter 101. Thus, on the one hand, it is ensured that the concentration of phosphorus element in the emitter 101, which does not need to be in contact with the electrode, is low, to reduce auger recombination in the emitter 101 and recombination by means of recombination centers, and to improve the photovoltaic cell to the short wavelength band Thereby facilitating an improvement in the collection efficiency of the emitter 101 for the photo-generated carriers; on the other hand, the concentration of the phosphorus element in the first doped region 111 is increased, so that the second doped region is formed on the basis of the first doped region 111.
When the local region of the dopant source layer 102 is subjected to laser processing, due to the non-uniformity of the laser energy density distribution, the energy density of the laser middle region is higher, the energy density of the edge region is lower, the region with low laser energy density is in a heated state, and a part of the region with high laser energy density is in a molten state, that is, a part of the emitter 101 under the action of laser is in a molten state, the emitter 101 in the molten state (e.g., a crystalline silicon layer) forms an amorphous structure after being cooled, and a large number of surface dangling bonds exist, so that a damaged region 103 is formed on the side of the first doped region 111 away from the substrate 100, and the interface state density of the surface of the damaged region 103 is high and the defect density in the damaged region 103 is high. In addition, the etching action of the laser removes the partial thickness of the dopant source layer 102 in the local area.
In some embodiments, with continued reference to fig. 4, the damaged region 103 includes a doped source layer after laser processing and a damaged layer 121 comprised of a portion of the emitter damaged by the laser. For convenience of description, the doped source layer after the laser treatment is set as the dielectric layer 112, it should be noted that, due to the etching effect of the laser, the thickness of the dielectric layer 112 is smaller than that of the doped source layer 102 without the laser treatment in the direction of the substrate 100 pointing to the emitter 101, and the main component of the material of the dielectric layer 112 is silicon oxide, that is, the material characteristics of the dielectric layer 112 are different from those of the doped source layer 102 without the laser treatment. In other embodiments, due to the etching effect of the laser, the local area of the doped source layer after the laser treatment may be removed, so that the damaged layer formed by the part of the emitter damaged by the laser may be exposed after the doped source layer and the emitter in the local area are subjected to the laser treatment.
In some embodiments, the thickness of the first doped region 111 may be 100nm to 800nm, in particular 200nm, 300nm, 400nm, 500nm, 600nm or 700nm, etc., in the direction of the substrate 100 pointing to the emitter 101. It should be noted that, the thickness of the first doped region 111 refers to the thickness of the first doped region 111 when not doped by the doping element in the subsequent doped electrode, and after the subsequent doping of the doping element in the doped electrode, a portion of the first doped region 111 is converted into the second doped region, so that the thickness of the remaining first doped region 111 is reduced.
The width of the first doped region 111 is 100um or more in a direction perpendicular to the substrate 100 pointing to the emitter 101. For example, the width of the first doped region 111 may be 100um to 120um, where the width of the first doped region 111 is within the range, which is favorable for aligning the electrode with the first doped region 111 when forming the electrode later, if the width of the first doped region 111 is less than 100um, misalignment between the electrode and the first doped region 111 is easily caused, and if the width of the first doped region 111 is greater than 120um, the duty ratio of the emitter 101 in the whole photovoltaic cell which is not subjected to laser treatment is reduced, so that the collection efficiency of the emitter 101 for photo-generated carriers is reduced. The width of the first doped region 111 may be 105um, 110um, 115um, or the like.
The sheet resistance of the first doped region 111 is lower than 100deg.OMEGA, for example, the sheet resistance of the first doped region 111 may be 70Ω to 100deg.OMEGA, and may be 75Ω, 80deg.A, 85Ω, 90Ω, or 95Ω.
In some embodiments, the thickness of the damaged region 103 is less than 100nm in the direction of the substrate 100 toward the emitter 101, for example, the thickness of the damaged region 103 may be 10nm to 100nm, and may be 20nm, 40nm, 60nm, or 80nm in particular.
Referring to fig. 4 to 6 in combination, the dopant source layer 102 and the damaged region 103 are removed.
In some embodiments, removing the dopant source layer 102 and the damaged region 103 may include the steps of:
taking the doping source layer 102 which is not subjected to laser treatment as a mask, removing the damaged region 103 by adopting an alkaline solution, wherein the mass concentration of alkali in the alkaline solution is 2% -30%, the reaction temperature for removing the damaged region 103 is 25 ℃ -80 ℃, and the reaction time is 2 min-40 min; the remaining dopant source layer 102 is removed.
The defect states between the electrode and the second doped region formed later are reduced by removing the damaged region 103 due to the fact that the number of defects on the surface and in the damaged region 103 is large, that is, the number of recheck centers is large, so that the recombination loss of carriers at the junction of the electrode and the second doped region is reduced, and the photoelectric conversion efficiency of the photovoltaic cell is improved.
It should be noted that, when the damaged region 103 includes the dielectric layer 112 and the damaged layer 121, since the material characteristics of the dielectric layer 112 are different from the material characteristics of the doped source layer 102 that is not subjected to the laser treatment, the main component of the material of the dielectric layer 112 is silicon oxide, and thus the doped source layer 102 can be used as a mask, and the dielectric layer 112 and the damaged layer 121 can be removed together by using an alkaline solution to expose the surface of the first doped region 111 away from the substrate 100.
In some embodiments, the alkaline solution has an etch depth of 10nm to 150nm. The surface of the first doped region 111 after the etching solution treatment may be observed by a transmission electron microscope to determine the final etching depth, and it should be noted that, under the observation of the transmission electron microscope, the surface of the first doped region 111 when the damaged region 103 is completely removed has no amorphous structure. In addition, the alkaline solution may be a potassium hydroxide solution.
In some embodiments, the concentration of the doping element at the surface of the first doping region 111 exposed after the damaged region 103 is removed is not less than 1×10 19 atoms/cm 3 。
In other embodiments, referring to fig. 5, after removing the damaged region 103, before removing the remaining dopant source layer 102, the manufacturing method may further include: the surface of the first doped region 111 exposed after the damaged region 103 is removed is subjected to an oxidation treatment to form a protective layer 131. Wherein the surface of the first doping region 111 may be oxidized with ozone to form the protective layer 131.
When the remaining doped source layer is removed in the subsequent alkaline polishing process, the etching solution will contact the protection layer 131 first, so that the protection layer 131 can protect the first doped region 111, prevent the first doped region 111 from being corroded by the etching solution or reduce the corrosion degree of the first doped region 111 by the etching solution, so as to keep most of the first doped region 111. In other embodiments, after removing the damaged region, the protective layer may not be formed, and the remaining dopant source layer may be directly removed in a subsequent alkali polishing process.
In some embodiments, in the step of sequentially forming the emitter 101 and the doped source layer 102 on the surface of one side of the substrate 100, the doped source layer 102 is further formed on the surface of the other side of the substrate 100 opposite to the emitter 101 and the side of the substrate 100, and the surface of the first doped region 111 is further provided with a protective layer 131. In this case, the process of removing the remaining dopant source layer 102 may include: all of the dopant source layer 102 and the protective layer 131 are removed using an alkali polishing process.
In the alkali polishing process, the apparatus for performing the alkali polishing process has a plurality of grooves. In some embodiments, after removing the damaged region 103, the emitter 101 and the doped source layer 102 on the other side of the substrate 100 facing the emitter 101 and the side of the substrate 100 may be removed using a tank containing a mixed solution of hydrofluoric acid and nitric acid, and then the doped source layer 102 and the protective layer 131 on the surface of the emitter 101 may be removed using a tank containing a hydrofluoric acid solution. In other embodiments, the emitter 101 and the dopant source layer 102 on the other side surface of the substrate 100 facing the emitter 101 and the side surface of the substrate 100 are removed using a bath containing a mixed solution of hydrofluoric acid and nitric acid before the damaged region 103 is removed, and then the dopant source layer 102 and the protective layer 131 on the surface of the emitter 101 are removed using a bath containing a hydrofluoric acid solution after the damaged region 103 is removed.
In both embodiments, the doping source layer 102 and the protection layer 131 include a silicon oxide material containing a phosphorus element, and the first doping region 111 includes a silicon material containing a phosphorus element, and the doping source layer 102 and the protection layer 131 on the surface of the emitter 101 may be removed using a hydrofluoric acid solution, since the hydrofluoric acid solution may react with the silicon oxide layer but may not react with the silicon material layer, and the first doping region 111 may remain. The mass concentration of hydrofluoric acid in the hydrofluoric acid solution may be 5%, and the reaction time required for removing the doping source layer 102 and the protection layer 131 on the surface of the emitter 101 may be 0.5min to 2min.
Referring to fig. 6 to 7, a passivation layer 104 is formed on the first doped region 111 and the surface of the emitter 101.
The passivation layer 104 may have a single-layer structure or a stacked-layer structure, and the material of the passivation layer 104 includes at least one of aluminum oxide, silicon dioxide, silicon nitride, and silicon oxynitride. The passivation layer 104 is beneficial to reducing the interface state density at the interface between the passivation layer 104 and the emitter 101 to be smaller, reducing the recombination loss of majority carriers and minority carriers at the interface, and on the other hand, being beneficial to generating larger energy band bending between the passivation layer 104 and the emitter 101, preventing the minority carriers from migrating to the surface of the emitter 101, reducing the concentration of the minority carriers on the surface of the emitter 101, reducing the recombination probability of the majority carriers and the minority carriers on the surface of the emitter 101, preventing the minority carriers from migrating, but not affecting the migration of the majority carriers, thereby being beneficial to realizing the selective transmission of the carriers and being beneficial to transmitting more majority carriers to the electrode of the photovoltaic cell. Both aspects are beneficial to improving the photoelectric conversion efficiency of the photovoltaic cell.
It should be noted that, in some embodiments, the preparation method may further include: a back passivation layer (not shown) is formed on a back surface opposite to the front surface of the substrate 100. The back passivation layer can be of a single-layer structure or a laminated structure, and the material of the back passivation layer comprises at least one of aluminum oxide, silicon nitride or silicon oxynitride. The effect of the passivation layer on the back surface and the passivation layer 104 on the whole photovoltaic cell is similar, and will not be described herein.
The preparation method can also comprise the following steps: patterning the back passivation layer to expose a local back surface of the substrate 100, in preparation for direct contact of a subsequent back electrode with the substrate 100, wherein the back passivation layer may be patterned using a picosecond pulse laser or a nanosecond pulse laser; a back electrode is formed at a partial rear surface of the exposed substrate 100, wherein the back electrode may be formed using a screen printing process.
Referring to fig. 7 to 8, a doping electrode 105 having the same doping element as in the first doping region 111 is formed at a side of the passivation layer 104 remote from the emitter 101, and an orthographic projection of the first doping region 111 on the substrate 100 covers an orthographic projection of the doping electrode 105 on the substrate 100.
Wherein a doping element, for example, a phosphorus element, is added to the doped electrode 105, and the doping element in the doped electrode 105 is driven to diffuse into the first doped region 111 by using a higher sintering temperature in the subsequent process of sintering the doped electrode 105. In addition, the front projection of the first doped region 111 on the substrate 100 covers the front projection of the doped electrode 105 on the substrate 100, which is beneficial to ensuring that the doped electrode 105 is aligned with the first doped region 111, avoiding the dislocation between the doped electrode 105 and the first doped region 111, and improving the contact area between the doped electrode 105 and the first doped region 111.
In some embodiments, the mass concentration of doping element in the doping electrode 105 is 0.01% -1%. For example, the mass concentration of the phosphorus element in the doped electrode 105 may be 0.01% to 1%, and in addition, the mass concentration of the silver element in the doped electrode 105 may be 80% to 90%, which is beneficial to providing the phosphorus element for the first doped region 111 later while ensuring that the doped electrode 105 has good conductivity. The method for forming the doped electrode 105 includes screen printing, and the weight of the slurry for forming the doped electrode 105 on each passivation layer 104 may be 30mg to 100mg, specifically 50mg, 70mg, 90mg, or the like.
Referring to fig. 8 and 1, the doped electrode 105 is sintered, an electrode 115 penetrating the passivation layer 104 is formed, and a second doped region 141 is formed between the electrode 115 and the first doped region 111.
In the process of sintering the doped electrode 105, the doped element in the doped electrode 105 is driven to diffuse into the first doped region 111 by using a higher sintering temperature, so that a part of the thickness of the first doped region 111 is converted into the second doped region 141, namely, the second doped region 141 contains the doped element in the original first doped region 111 and the doped element diffused in the doped electrode 105, so that the concentration of the doped element in the second doped region 141 is higher than that in the first doped region 111, the conductivity of the second doped region 141 is improved, good ohmic contact is formed between the electrode 115 and the second doped region 141, and the contact resistance between the electrode 115 and the second doped region 141 is reduced, thereby being beneficial to transmitting more majority carriers to the electrode 115 of the photovoltaic cell, and improving the photoelectric conversion efficiency of the photovoltaic cell.
In addition, when the damaged region 103 is removed, the top end of the portion of the first doped region 111 away from the substrate 100 is removed, so that the concentration of the doped element at the surface of the first doped region 111 away from the substrate 100 is reduced, the doped element is added into the doped electrode 105, and the doped element in the doped electrode 105 is driven to diffuse to the first doped region 111 by utilizing the high temperature effect in the process of sintering the doped electrode 105, so as to compensate the reduction of the doped concentration at the surface of the first doped region 111 when the damaged region 103 is removed, and form the second doped region 141 with high doped element concentration at the surface, thereby ensuring that good ohmic contact is formed between the electrode 115 and the second doped region 141.
In some embodiments, the sintering temperature of the sintered doped electrode 105 may be 750-850 ℃, where the sintering temperature is in the range that is beneficial to ensure good flowability of the slurry forming the doped electrode 105 and good corrosion ability to the passivation layer 104 to promote direct contact of the slurry with the first doped region 111 through the passivation layer 104, and where the doped element in the doped electrode 105 has a good migration rate that is beneficial to drive more doped element into the first doped region 111 to ultimately form the electrode 115 and the second doped region 141. In addition, the doping element in the doped electrode 105 enters the first doped region 111 by thermal diffusion to form the second doped region 141, so that the second doped region 141 is not damaged, i.e. the defect state density in the second doped region 141 is not increased.
In some embodiments, the concentration of the doping element at the surface of the second doping region 141 contacting the electrode 115 is greater than 5×10 19 atoms/cm 3 The thickness of the second doped region 141 is below 100nm in the direction of the substrate 100 towards the emitter 101. The concentration of the doping element has a great influence on the contact performance between the electrode 115 and the second doping region 141 within a depth of 100nm of the second doping region 141 away from the surface of the substrate 100 into the second doping region 141, so that the concentration of the doping element in the second doping region 141 is increased by the high temperature effect of the sintering process, which is beneficial to ensuring between the electrode 115 and the second doping region 141 Good ohmic contact, and reduced contact resistance between the electrode 115 and the second doped region 141, thereby improving photoelectric conversion efficiency of the photovoltaic cell.
Wherein Fang Zuxiao of the second doped region 141 is a sheet resistance of the first doped region 111. In some embodiments, the sheet resistance of the first doped region 111 is not higher than 100deg.OMEGA, and the sheet resistance of the second doped region 141 is not higher than 70Ω.
In other embodiments, in combination with fig. 2 and with reference to fig. 9-11, a method of manufacturing a photovoltaic cell includes the steps of:
referring to fig. 9, a substrate 100 is provided; an emitter 101 and a doping source layer (not shown) are sequentially formed on a surface of one side of the substrate 100; processing a partial region of the doping source layer using a laser to sequentially form a first doping region 111 and a damaged region (not shown) in the emitter 101 and the substrate 100 corresponding to the partial region; and removing the doped source layer and the damaged region. The steps are the same as those of the previous embodiments, and are not described here again.
With continued reference to fig. 9, after removing the damaged region, the method of preparing further includes, prior to subsequently forming the second doped region: the surface of the first doped region 111 exposed after the damaged region is removed is doped to form a third doped region 151.
The surface of the emitter 101 that is not acted by the laser has a doped source layer, which can be used to protect the emitter 101, prevent the emitter 101 from being further doped, and expose the surface of the first doped region 111, so that the doping of the doping element directly performed on the first doped region 111 forms the third doped region 151, so as to improve the doping element in the third doped region 151, and at the same time, ensure a lower doping element concentration in the emitter 101, so as to reduce auger recombination in the emitter 101 and recombination by means of a recombination center, and improve the spectral response of the photovoltaic cell to a short wavelength band.
In some embodiments, the process of removing the surface of the first doped region 111 exposed after the damaged region includes a tube thermal diffusion process or an ion implantation process, and the doping element concentration at the surface of the third doped region 151 is greater than 1×10 20 atoms/cm 3 In the direction of the substrate 100 pointing to the emitter 101, a third doped region 15The thickness of 1 is 200nm to 1000nm, specifically 400nm, 600nm and 800nm. It should be noted that, herein, the thickness of the third doped region 151 refers to the thickness of the third doped region 151 when not doped by the doping element in the subsequent doped electrode, and after the subsequent doping of the doping element in the doped electrode, a portion of the third doped region 151 is converted into the second doped region, so that the thickness of the remaining third doped region 151 is reduced.
In some embodiments, after the second doped region is formed, the thickness of the remaining third doped region 151 may be 50nm to 200nm.
It should be noted that, in fig. 2 and fig. 9 to 11, only the third doped region 151 is located in the emitter 101, that is, the bottom surface of the third doped region 151 is not lower than the bottom surface of the emitter 101, and in practical applications, the third doped region 151 may be located in the emitter 101 and the substrate 100, that is, the bottom surface of the third doped region 151 may be lower than the bottom surface of the emitter 101, or the bottom surface of the third doped region 151 may be lower than the bottom surface of the first doped region 111.
Referring to fig. 9 to 11, a passivation layer 104 is formed on the first doped region 111 and the surface of the emitter 101; forming a doping electrode 105 having a doping element on a side of the passivation layer 104 remote from the emitter 101; the doped electrode 105 is sintered to form the electrode 115 penetrating the passivation layer 104, and the second doped region 141 is formed between the electrode 115 and the first doped region 111, and it should be noted that, when the third doped region 151 is formed on the basis of the first doped region 111 before the second doped region 141 is formed, the second doped region 141 is specifically formed between the electrode 115 and the third doped region 151. The steps are the same as those of the previous embodiments, and are not described here again.
As such, not only is the first doped region 111 doped with the doping element after the damaged region is removed to form the third doped region 151, but also the third doped region 151 is doped with the doping element to form the second doped region 141 during sintering of the doped electrode, and thus, not only is the concentration of the doping element in the second doped region 141 higher than that in the first doped region 111, but also the concentration of the doping element in the second doped region 141 is higher than that in the third doped region 151. On the one hand, the concentration of the doping element in the second doped region 141 is further improved, so that the conductivity of the second doped region 141 is further improved, good ohmic contact is formed between the electrode 115 and the second doped region 141, and the contact resistance between the electrode 115 and the second doped region 141 is reduced; on the other hand, it is beneficial to avoid that more doping elements are doped in the doped electrode 105 to further increase the concentration of the doping elements in the second doped region 141, which affects the conductivity of the formed electrode 115, that is, it is beneficial to directly dope the first doped region 111 with the doping elements while ensuring good conductivity of the electrode 115, further increase the concentration of the doping elements in the second doped region 141, and the two aspects work together, which is beneficial to further reduce the contact resistance between the electrode 115 and the second doped region 141, so that more majority carriers are transmitted to the electrode 115 of the photovoltaic cell, thereby improving the photoelectric conversion efficiency of the photovoltaic cell. In addition, the doping element concentrations in the first doping region 111, the third doping region 151 and the second doping region 141 are all greater than the doping element concentration in the emitter 101, so that PN junctions are formed between the first doping region 111, the third doping region 151 and the second doping region 141 and the emitter 101, so as to improve the collection efficiency of the emitter 101 on the photo-generated carriers, and thus improve the photoelectric conversion efficiency of the photovoltaic cell.
In some embodiments, the concentration of the doping element in the second doping region 141 may be 3×10 20 atoms/cm 3 。
In summary, removing the damaged region 103 is beneficial to reducing the recombination loss of carriers at the junction between the electrode 115 and the second doped region 141, and simultaneously, using the high temperature effect in the process of sintering the doped electrode 105 to drive the doped element in the doped electrode 105 to diffuse to the first doped region 111, so as to compensate the reduction of the doped element concentration at the surface of the first doped region 111 when removing the damaged region 103, and further improve the concentration of the doped element in the second doped region 141, so that good ohmic contact is formed between the electrode 115 and the second doped region 141, and the contact resistance between the electrode 115 and the second doped region 141 is reduced, thereby integrally improving the photoelectric conversion efficiency of the photovoltaic cell. In addition, the doping element concentration in the first doping region 111 and the second doping region 141 is greater than the doping element concentration in the emitter 101, so that a PN junction is formed between the first doping region 111 and the second doping region 141 and the emitter 101, so that the collection efficiency of the emitter 101 for photo carriers is improved, and the photoelectric conversion efficiency of the photovoltaic cell is improved.
Still another embodiment of the present application provides a photovoltaic module for converting received light energy into electrical energy. Fig. 12 is a schematic structural diagram of a photovoltaic module according to another embodiment of the present disclosure.
Referring to fig. 12, the photovoltaic module includes a battery string (not shown), a packaging film 140, and a cover plate 150; the cell string is formed by connecting a plurality of photovoltaic cells 130, and the photovoltaic cells 130 can be any of the aforementioned photovoltaic cells (including but not limited to the photovoltaic cells shown in fig. 7 or 11), or can be photovoltaic cells prepared by a preparation method of any of the aforementioned photovoltaic cells, and the adjacent photovoltaic cells 130 are electrically connected by a conductive tape (not shown), and meanwhile, the positional relationship between the adjacent photovoltaic cells 130 can be partially laminated or spliced; the packaging adhesive film 140 may be an organic packaging adhesive film such as an ethylene-vinyl acetate copolymer (EVA) adhesive film, a Polyethylene Octene Elastomer (POE) adhesive film, or a polyethylene terephthalate (PET) adhesive film, and the packaging adhesive film 140 covers the surface of the battery string to seal; the cover plate 150 may be a transparent or semitransparent cover plate such as a glass cover plate or a plastic cover plate, and the cover plate 150 covers the surface of the packaging adhesive film 140 facing away from the battery strings.
In some embodiments, the light trapping structure is disposed on the cover plate 150 to increase the utilization of the incident light, and the light trapping structure of different cover plates 150 may be different. The photovoltaic module has higher current collection capacity and lower carrier recombination rate, and can realize higher photoelectric conversion efficiency; meanwhile, the front surface of the photovoltaic module presents dark blue or even black, and can be applied to more scenes.
In some embodiments, encapsulant film 140 and cover plate 150 are located only on the front surface of photovoltaic cell 130, avoiding further blocking and weakening of weaker light by encapsulant film 140 and cover plate 150 located on the back surface; meanwhile, the photovoltaic module can also be packaged in a side full-surrounding mode, namely, the side of the photovoltaic module is completely covered by the packaging adhesive film 140, so that the phenomenon that the photovoltaic module is subjected to lamination deflection in the lamination process is prevented, and the performance of the photovoltaic cell, such as water vapor invasion, is prevented from being influenced by the external environment through the side of the photovoltaic module.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of implementing the present application and that various changes in form and details may be made therein without departing from the spirit and scope of the present application. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention shall be defined by the appended claims.
Claims (13)
1. A photovoltaic cell, comprising:
a substrate, an emitter and a passivation layer sequentially stacked on a surface of one side of the substrate;
A first doped region at least in part of the substrate, the emitter and the first doped region having the same doping element;
a second doped region located on a side of the first doped region away from the substrate and having the doping element, the doping element having a higher concentration in the second doped region than in the first doped region;
a third doped region located between the first doped region and the second doped region and having the doping element, such that the first doped region, the third doped region, and the second doped region are sequentially stacked in a direction away from the substrate, and a concentration of the doping element in the second doped region is higher than a concentration in the third doped region, and a concentration of the doping element in the third doped region is higher than a concentration in the first doped region, such that a concentration of the doping element in the first doped region, the third doped region, and the second doped region gradually increases;
an electrode penetrating the passivation layer and part of the emitter and contacting and connecting with the second doped region, wherein the concentration of the doping element at the surface of the second doped region contacting with the electrode is greater than that of the second doped region 5×10 19 atoms/cm 3 。
2. The photovoltaic cell of claim 1, wherein a sum of a thickness of the second doped region and a thickness of the third doped region in a direction in which the substrate is directed toward the emitter is 200nm to 1000nm.
3. The photovoltaic cell of claim 1, wherein the thickness of the third doped region is 50nm to 200nm in a direction in which the substrate is directed toward the emitter.
4. The photovoltaic cell of claim 1, wherein the sheet resistance of the first doped region is no higher than 100 Ω and the sheet resistance of the second doped region is no higher than 70 Ω.
5. The photovoltaic cell of claim 1, wherein the width of the first doped region is 100um or greater in a direction perpendicular to the substrate pointing in the direction of the emitter.
6. The photovoltaic cell of claim 1, wherein an orthographic projection of the first doped region onto the substrate covers an orthographic projection of the electrode onto the substrate.
7. The photovoltaic cell of claim 1, wherein the electrode has a doping element, the mass concentration of doping element in the electrode being less than 1%.
8. A method of manufacturing a photovoltaic cell, comprising:
Providing a substrate;
sequentially forming an emitter and a doped source layer on the surface of one side of the substrate, wherein the emitter and the doped source layer have the same doping element;
processing a local area of the doping source layer by using laser to form a first doping area and a damaged area in the emitter and the substrate corresponding to the local area, wherein the first doping area is provided with the doping element;
removing the doping source layer and the damaged region;
forming a second doped region with the doping element on one side of the first doped region away from the substrate, wherein the concentration of the doping element in the second doped region is higher than that in the first doped region;
forming an electrode on one side of the second doped region far away from the first doped region, wherein the electrode penetrates through part of the emitter; after removing the damaged region, before forming the second doped region, further comprising: and doping the surface of the first doped region exposed after the damaged region is removed to form a third doped region with the doping element, enabling the first doped region, the third doped region and the second doped region to be stacked in sequence along the direction away from the substrate, and enabling the concentration of the doping element in the first doped region, the third doped region and the second doped region to be gradually increased.
9. The method of manufacturing of claim 8, further comprising, after removing the damaged region, before removing the dopant source layer: and oxidizing the surface of the first doped region exposed after the damaged region is removed to form a protective layer.
10. The method of manufacturing of claim 9, wherein the dopant source layer and the protective layer comprise a silicon oxide material comprising a phosphorus element, and the first doped region comprises a silicon material comprising a phosphorus element; in the step of removing the doping source layer, the protective layer is removed.
11. The method of manufacturing according to claim 10, wherein the doping source layer and the protective layer are removed using a hydrofluoric acid solution.
12. The method of manufacturing of claim 8, wherein the step of forming the second doped region and the electrode comprises:
forming a passivation layer on the first doped region and the surface of the emitter;
forming a doped electrode with the doping element on one side of the passivation layer away from the emitter;
sintering the doped electrode to form an electrode penetrating through the passivation layer, and forming a second doped region between the electrode and the first doped region.
13. A photovoltaic module, comprising:
a cell string formed by the connection of a plurality of the photovoltaic cells of any one of claims 1 to 7 or by the connection of a plurality of photovoltaic cells prepared by the method of preparing a photovoltaic cell of any one of claims 8 to 12;
the packaging adhesive film is used for covering the surface of the battery string;
and the cover plate is used for covering the surface of the packaging adhesive film, which is away from the battery strings.
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