CN104795127A - Electric conduction slurry and application of electric conduction slurry in N type silicon wafer solar cells - Google Patents
Electric conduction slurry and application of electric conduction slurry in N type silicon wafer solar cells Download PDFInfo
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Abstract
The invention discloses electric conduction slurry and application of the electric conduction slurry in N type silicon wafer solar cells. The electric conduction slurry is composed of, by weight, 65% to 94% of silver powder, 0.1% to 20% of second metal powder, 0.1% to 10% of doping agents, 0.6% to 12% of glass powder, 0.1% to 4% of additives and 4% to 20% of organic carriers, wherein the sum of the weight percents of all the components of the electric conduction slurry is 100%, and the eutectic point temperature of the second metal powder and silicon is smaller than the sintering temperature peak value of silicon wafers. P type transmitters of the N type silicon wafer solar cells are prepared through the electric conduction slurry, and then the N type silicon wafer solar cells are formed. The electric conduction slurry can make contact with the silicon wafers in a self-doping mode, and therefore the contact resistance is lowered, the filling factor is increased, the composition speed of minority carriers on the lower surface of the electric conduction slurry is decreased, the open-circuit voltage and the short-circuit current of the cells are improved, and therefore the conversion efficiency of the N type silicon wafer solar cells is improved.
Description
Technical field
The present invention relates to electrocondution slurry and technical field of solar batteries, specifically a kind of electrocondution slurry and the application in N-type silicon chip solar cell thereof.
Background technology
Solar cell is the semiconductor device that a kind of luminous energy by the sun is converted into electric energy.Because it is Green Product, environmental pollution can not be caused, and utilization is renewable resource, so under current energy starved situation, solar cell has vast potential for future development.
Solar cell of a great variety, wherein, N-type solar cell, owing to can reach higher conversion efficiency, receives the concern of more and more insider." the boron oxygen to " of P-type silicon substrate can cause efficiency attenuation problem, adopts N-type silicon substrate then not have this problem.The minority carrier life time of General N type silicon is longer, generally at 100 more than μ s, so N-type silicon substrate is conducive to the photoelectric efficiency improving solar cell.
But N-type silicon solar cell has a general deficiency to be that the electrical contact of battery electrode and semiconductor is abundant not.For N-type silicon solar cell, emitter doping is generally boron, but not the phosphorus of P type solar cell, this makes the work function of two kinds of silicon chip surfaces (work function) different.The surface dopant concentration of N-type silicon chip and P-type silicon sheet emitter is also different in addition.Above 2 differences cause the front side silver paste of traditional P type solar cell can not be directly used in N-type cell.The silver slurry contact resistance of existing N-type cell is still higher, thus causes certain energy loss.
The concentration of the contact resistance of electrode and semiconductor and the foreign atom of semiconductor surface has very large relation.Surface dopant concentration is higher, and general contact resistance is lower.But if the surface dopant concentration of whole emitter is too high, the compound of few son in emitter will increase, and photoelectric conversion efficiency can reduce.So can not reach only according to increasing N-type silicon chip surface dopant concentration the effect reducing contact resistance.In addition, the doping content of the emitter (boron) of N-type silicon chip regulates the emitter (phosphorus) getting up not have P-type silicon sheet so easy and convenient.In fact, low than P-type silicon sheet of the surface dopant concentration of N-type silicon chip emitter.Therefore, developing a good electrocondution slurry to effectively reduce contact resistance and to improve cell photoelectric conversion efficiency, is current N-type silicon solar cell field problem demanding prompt solution.
Summary of the invention
The object of the invention is the defect existed for prior art, a kind of electrocondution slurry for solar cell is provided, and adopt this electrocondution slurry to prepare the P type emitter electrode of N-type silicon chip solar cell, thus make this electrocondution slurry in N-type silicon chip solar cell, this electrocondution slurry forms oneself's doping by making silicon chip, thus make to uprise with the doping content of the emitter local area of electrode contact, reduce contact resistance to improve the conversion efficiency of solar cell.
The object of the invention is to solve by the following technical programs:
A kind of electrocondution slurry, it is characterized in that: the composition of this electrocondution slurry and weight percentage are: silver powder 65-94%, the second metal powder 0.1-20%, dopant 0.1-10%, glass dust 0.6-12%, additive 0.1-4% and organic carrier 4-20%, and each composition weight percentage composition sum of this electrocondution slurry is 100%; The eutectic temperature of wherein said second metal powder and silicon is less than the sintering temperature peak value of silicon chip.
The eutectic temperature of described second metal powder and silicon is less than 600 DEG C.
The second described metal powder is the combination of any one or the combination of any two kinds in aluminium powder, bronze, copper powder, magnesium powder or the combination of any three kinds or four kinds.
The second described metal powder is spherical, sheet or erose aluminium powder and aluminum particle diameter is 1-10 μm.
Described dopant is counter dopant, this dopant is boron, aluminium, magnesium, indium, sow and boron-containing compound, aluminum contained compound, magnesium-containing compound, containing indium compound with containing any one or the combinations two or more arbitrarily of sowing in compound.
Described dopant is spherical or sheet, and the particle diameter of dopant is the powder of 0.2-10 μm.
Described silver powder is spherical or sheet, and the particle diameter of silver powder is 1-6 μm.
Described glass dust employing particle diameter is the flint glass powder of 0.3-15 μm, the composition of flint glass powder and molar content are: the lead oxide of 35-80%, the silica of 0.5-45%, the boron oxide of 12-50% and the aluminium oxide of 0.1-10%, and the molar content sum of each component is 100%.
Described glass dust adopts particle diameter to be 0.3-15 μm of lead-free glass powder, its composition and molar content are: the aluminium oxide of the boron oxide of the silica of 0.5-25%, the zinc oxide of 20-40%, 15-50%, the bismuth oxide of 15-40%, the barium monoxide of 0.5-10% and 0.1-10%, and the molar content sum of each component is 100%.
Described additive is at least one in viscosity modifier, surfactant, stabilizer, dispersant, thickening pole, wetting dispersing agent and defoamer.
Described organic carrier is the mixture of organic resin and solvent, wherein resin is at least one in methylcellulose, ethyl cellulose, carboxymethyl cellulose and hydroxyethylcellulose, and solvent is at least one in terpinol, turpentine oil, carbitol and cyclohexanone.
Present invention also offers a kind of method adopting described electrocondution slurry to prepare the P type emitter electrode of N-type silicon chip solar cell, it is characterized in that: its step comprises:
(1) N type semiconductor substrate is provided, the front surface antireflection layer on the P type emitter of described semiconductor substrate containing N type basalis, N-type basalis front surface, P type emitter, the rear surface passivation layer of N-type basalis;
(2) described electrocondution slurry to be printed onto on front surface antireflection layer and to dry, the composition of wherein said electrocondution slurry and weight percentage are: silver powder 65-94%, the second metal powder 0.1-20%, dopant 0.1-10%, glass dust 0.6-12%, additive 0.1-4% and organic carrier 4-20%, and each composition weight percentage composition sum of this electrocondution slurry is 100%; The eutectic temperature of wherein said second metal powder and silicon is less than the sintering temperature peak value of silicon chip;
(3) printed back electrocondution slurry, and dry;
(4) sintering forms electrode ohmic contact.
Sintering temperature peak ranges in the sintering process of described step (4) is 750-1000 DEG C, and sintering time is 30s-5min.
Front surface antireflection layer in described step (1) is any one or two or more combination layers in silicon nitride layer, silicon oxide layer, alumina layer, titanium oxide layer, indium tin oxide layer, zinc oxide film, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer, and the thickness of front surface antireflection layer is 1-200 nanometer.
Rear surface passivation layer in described step (1) is any one or two or more combination layers in silicon nitride layer, silicon oxide layer, alumina layer, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer.
N type semiconductor substrate used in described step (1) is monocrystalline silicon piece or polysilicon chip.
In order to finally apply this electrocondution slurry, present invention also offers a kind of N-type silicon chip solar cell, using the solar cell that the P type emitter electrode of the N-type silicon chip solar cell of preparation is formed.
The present invention has the following advantages compared to existing technology:
Electrocondution slurry provided by the present invention can form autodoping with silicon chip and contact, thus reduces contact resistance.Because the second metal powder in electrocondution slurry and silicon can form lower eutectic temperature and this eutectic temperature is less than the sintering temperature peak value of silicon chip; In sintering process, the point that silicon chip contacts with electrocondution slurry will form liquid phase when sintering temperature reaches peak value, along with temperature reduces again, again formed by the silicon of liquid phase epitaxy melting, foreign atom can be added in the silicon crystal lattice regrowed, or penetrates among silicon chip, thus forms oneself's doping, make to uprise with the doping content of the emitter local area of electrode contact, thus reduce contact resistance; Meanwhile, on emitter, the doping content of all the other most of areas still keeps original concentration; Therefore, this electrocondution slurry can reduce the contact resistance with the P type emitter of N-type silicon chip solar cell, reduce the recombination rate of minority carrier at electrocondution slurry lower surface, improve open circuit voltage and the short circuit current of battery, thus improve the conversion efficiency of N-type silicon chip solar cell.
Embodiment
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearly understand, below the present invention is further elaborated.
The invention provides a kind of electrocondution slurry, the composition of this electrocondution slurry and weight percentage are: silver powder 65-94%, the second metal powder 0.1-20%, dopant 0.1-10%, glass dust 0.6-12%, additive 0.1-4% and organic carrier 4-20%, and each composition weight percentage composition sum of this electrocondution slurry is 100%; The eutectic temperature of wherein said second metal powder and silicon is less than the sintering temperature peak value of silicon chip, and further qualifications is that the eutectic temperature of the second metal powder and silicon is less than 600 DEG C.
The second wherein said metal powder is be less than any one metal powder of sintering temperature or the combination of several metal powder with the eutectic temperature of silicon, the combination of any one or the combination of any two kinds in such as aluminium powder, bronze, copper powder or magnesium powder or the combination of any three kinds or four kinds; Wherein the eutectic temperature of aluminium and silicon is 577 DEG C, the eutectic temperature of gold and silicon is 363 DEG C.Further qualifications is: the second wherein said metal powder be spherical, sheet, irregularly shaped or other arbitrary shapes aluminium powder and aluminum particle diameter is 1-10 μm, the diameter of aluminum particle is further defined to 2-5 μm; And the purity of the aluminium powder used in example of the present invention is 99% or higher, certainly according to the different requirements to product, the aluminium powder compared with low-purity also can be used.In scheme provided by the invention, the diameter of particle obtains by adopting laser diffraction and scattering method to measure its distribution, and is defined as D50.
Wherein said dopant is counter dopant, dopant is generally boron, aluminium, magnesium, indium, sow and boron-containing compound, aluminum contained compound, magnesium-containing compound, containing indium compound with containing any one or the combinations two or more arbitrarily of sowing in compound; Dopant is the powder of spherical, sheet or other shapes arbitrarily, and particle diameters is arbitrary size, and usual particle diameters is 0.2-10 μm, and limiting particle diameters is further 0.5-2 μm.
Wherein said silver powder shape is arbitrary shape, comprises spherical or sheet, is further defined to spherical; The diameter of silver powder particles can be arbitrary size, but the size of particle can affect the sintering characteristic of slurry, the smaller Argent grain sintering of such as larger Argent grain is slower, and in scheme provided by the invention, silver powder particles typically has a diameter from 1-6 μm, is further defined to 1-2 μm.The silver powder purity used in scheme provided by the invention is 99% or more highly purified, certainly according to the different requirements to product, also can use the silver powder compared with low-purity.
Glass dust in electrocondution slurry has etching to penetrate front surface antireflection layer, helps the effect of electrode contact silicon chip in sintering process, can also promote simultaneously silver powder knot and.In the selection of glass dust, there are multiple choices, from large aspect, be generally three kinds of selections, the first scheme is: glass dust employing particle diameter is the flint glass powder of 0.3-15 μm, the scope of further restriction is the flint glass powder of 0.5-6 μm, and the composition of flint glass powder and molar content are: the lead oxide (PbO) of 35-80%, the silica (SiO of 0.5-45%
2), the boron oxide (B of 12-50%
2o
3) and the aluminium oxide (Al of 0.1-10%
2o
3), and the molar content sum of each component is 100%; First scheme is: glass dust adopts particle diameter to be 0.3-15 μm of lead-free glass powder, and the scope limited further is the lead-free glass powder of 0.5-6 μm, and its composition and molar content are: the silica (SiO of 0.5-25%
2), the zinc oxide (ZnO) of 20-40%, the boron oxide (B of 15-50%
2o
3), the bismuth oxide (Bi of 15-40%
2o
3), the barium monoxide (BaO) of 0.5-10% and the aluminium oxide (Al of 0.1-10%
2o
3), and the molar content sum of each component is 100%.In 3rd, scheme is: glass dust of the present invention is not limited to concrete formula, can use the combination of flint glass and crown glass.The softening point temperature of glass is 300-600 degree Celsius, and softening point can pass through differential scanning calorimeter (DTA) and measure.Glass dust can be prepared by method well known in the art.Such as, can by mixing and the raw material such as melting such as oxide, hydroxide, carbonate, by extracting the cold glass that is prepared into, then mechanical crushing (wet lapping or dry grinding) prepares glass powder.Finally, if need to carry out classification to its granularity.
Wherein said additive is at least one in viscosity modifier, surfactant, stabilizer, dispersant, thickening pole, wetting dispersing agent and defoamer, and the combination of additive and amount depend on the characteristic required for electrocondution slurry.
Wherein said organic carrier is the mixture of organic resin and solvent, wherein resin is at least one in methylcellulose, ethyl cellulose, carboxymethyl cellulose and hydroxyethylcellulose, and solvent is at least one in terpinol, turpentine oil, carbitol and cyclohexanone.
Electrocondution slurry is generally prepared by method well known in the art.Such as, glass dust, additive and silver powder are distributed in organic carrier, then repeatedly roll mixture with three-roll grinder, to be prepared into silver slurry; In order to make the second metal powder and dopant be dispersed in electrocondution slurry uniformly, the second metal powder, dopant can be dispersed in respectively in organic carrier (organic resin and solvent), last and silver slurry mixes to make electrocondution slurry.
Present invention also offers a kind of method adopting described electrocondution slurry to prepare the P type emitter electrode of N-type silicon chip solar cell, its step comprises:
(1) N type semiconductor substrate is provided, the front surface antireflection layer on the P type emitter of described semiconductor substrate containing N type basalis, N-type basalis front surface, P type emitter, the rear surface passivation layer of N-type basalis;
(2) described electrocondution slurry to be printed onto on front surface antireflection layer and to dry, the composition of wherein said electrocondution slurry and weight percentage are: silver powder 65-94%, the second metal powder 0.1-20%, dopant 0.1-10%, glass dust 0.6-12%, additive 0.1-4% and organic carrier 4-20%, and each composition weight percentage composition sum of this electrocondution slurry is 100%; The eutectic temperature of wherein said second metal powder and silicon is less than the sintering temperature peak value of silicon chip;
(3) printed back electrocondution slurry, and dry;
(4) sintering forms electrode ohmic contact.
In above-mentioned preparation method, N type semiconductor substrate used in step (1) is monocrystalline silicon piece or polysilicon chip; Front surface antireflection layer in step (1) is any one or two or more combination layers in silicon nitride layer, silicon oxide layer, alumina layer, titanium oxide layer, indium tin oxide layer, zinc oxide film, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer, and the thickness of front surface antireflection layer is 1-200 nanometer, the thickness of front surface antireflection layer is further defined to 70-95 nanometer, usually can be formed by such as plasma enhanced chemical vapor deposition (PECVD); Rear surface passivation layer in step (1) is any one or two or more combination layers in silicon nitride layer, silicon oxide layer, alumina layer, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer, rear surface passivation layer can strengthen chemical vapour deposition (CVD) (PECVD) technique or the formation of ald (ALD) process deposits by using plasma usually, and the thickness range of rear surface passivation layer is 1 ~ 100 nanometer, the thickness range of rear surface passivation layer is further defined to 10-40 nanometer; Sintering can make slurry etch and penetrate antireflection layer, thus silver slurry contacts with silicon chip, usual use infrared heating furnace, sintering time and temperature can regulate and the typical temperature higher time then used shorter, sintering temperature peak ranges in the sintering process of step (4) is 750-1000 DEG C, and sintering time is 30s-5min.
In order to finally apply this electrocondution slurry, present invention also offers a kind of N-type silicon chip solar cell, using the solar cell that the P type emitter electrode of the N-type silicon chip solar cell of preparation is formed.
It should be explained that in addition: " the sintering temperature peak value " repeatedly mentioned in the present invention refers to the maximum temperature that silicon chip experiences in sintering process.
Be more than core concept of the present invention, for enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail below to the specific embodiment of the present invention.
Embodiment one
Present embodiments provide a kind of electrocondution slurry, forming percentage composition is by weight:
| Component | Weight percentage |
| Silver powder | 78.0% |
| Second metal powder: aluminium powder | 2.5% |
| Dopant: boron powder | 0.8% |
| Glass dust: Bi 2O 3-B 2O 3-ZnO-SiO 2-Al 2O 3-BaO system | 9.5% |
| Organic carrier: ethyl cellulose+terpinol | 8.7% |
| Additive: viscosity modifier | 0.5% |
Wherein the particle diameter of ball shape silver powder is 1-2 μm, and the particle diameter of the second metal powder aluminium powder is 3-4 μm, and the particle diameter of dopant boron powder is for being less than 1 μm, and glass dust is Bi
2o
3-B
2o
3-ZnO-SiO
2-Al
2o
3the lead-free glass powder of-BaO system and the particle diameter of lead-free glass powder is 2-6 μm.
Preparation process: above-mentioned each component of electrocondution slurry is weighed in proportion.Lead-free glass powder, silver powder and additive are distributed in organic carrier, then repeatedly roll mixture 3-5 time with three-roll grinder, use 400 order silk screen filter to be prepared into silver slurry afterwards; Then the second metal powder aluminium powder, dopant boron powder are dispersed in organic carrier respectively, finally they and silver are starched together with Homogeneous phase mixing, to make electrocondution slurry.
Embodiment two
Present embodiments provide a kind of electrocondution slurry, forming percentage composition is by weight:
| Component | Weight percentage |
| Silver powder | 80.2% |
| Second metal powder: 20% bronze+80% aluminium powder | 1.5% |
| Dopant: gallium nitride powder | 0.8% |
| Glass dust: PbO-B 2O 3-SiO 2-Al 2O 3System | 8.0% |
| Organic carrier: ethyl cellulose+terpinol | 9.0% |
| Additive: viscosity modifier | 0.5% |
Wherein the particle diameter of ball shape silver powder is 1-2 μm, and the second metal powder is bronze with the mixing of aluminium powder, particle diameter is 3-4 μm, and dopant is gallium nitride powder, and glass dust is PbO-B
2o
3-SiO
2-Al
2o
3the flint glass powder of system and the particle diameter of flint glass powder is 2-6 μm.
Preparation process: above-mentioned each component of electrocondution slurry is weighed in proportion.Flint glass powder, silver powder and additive are distributed in organic carrier, then repeatedly roll mixture 3-5 time with three-roll grinder, use 400 order silk screen filter to be prepared into silver slurry afterwards; Then the second metal powder formed by 20% bronze+80% aluminium powder, dopant gallium nitride powder are dispersed in organic carrier respectively, finally they and silver are starched together with Homogeneous phase mixing, to make electrocondution slurry.
Embodiment three
Present embodiments provide a kind of electrocondution slurry, forming percentage composition is by weight:
| Component | Weight percentage |
| Silver powder | 84.0% |
| Second metal powder: aluminium powder | 2.0% |
| Dopant: boronation silica flour | 0.6% |
| Glass dust: PbO-B 2O 3-SiO 2-Al 2O 3System | 4.0% |
| Organic carrier: methylcellulose+turpentine oil | 8.9% |
| Additive: viscosity modifier | 0.5% |
Wherein the particle diameter of ball shape silver powder is 1-2 μm, and the second metal powder is the particle diameter of aluminium powder is 3-4 μm, and dopant is the boronation silica flour that particle diameter is less than 1 μm, and glass dust is PbO-B
2o
3-SiO
2-Al
2o
3the flint glass powder of system and the particle diameter of flint glass powder is 2-6 μm.
Preparation process: above-mentioned each component of electrocondution slurry is weighed in proportion.Flint glass powder, silver powder and additive are distributed in organic carrier, then repeatedly roll mixture 3-5 time with three-roll grinder, use 400 order silk screen filter to be prepared into silver slurry afterwards; Then the second metal powder aluminium powder, dopant boronation silica flour are dispersed in organic media respectively, finally they and silver are starched together with Homogeneous phase mixing, to make electrocondution slurry.
Embodiment four
Based on embodiment one to embodiment three, present embodiments provide a kind of method preparing the P type emitter electrode of N-type silicon chip solar cell, its step comprises:
(1) N type semiconductor substrate is provided, the front surface antireflection layer (front surface antireflection layer is the silicon nitride layer of 85 nanometer thickness) on the P type emitter of described semiconductor substrate containing N type basalis, N-type basalis front surface, P type emitter, the rear surface passivation layer (being the aluminium oxide of 10 nanometers and the combination layer of 40 nano silicon oxides) of N-type basalis;
(2) be printed onto on silicon chip front surface antireflection layer by the method for the electrocondution slurry silk screen printing in embodiment one to three, then dry 10s to 10min at 100-300 DEG C, makes electrocondution slurry dry;
(3) use the method printed back electrocondution slurry of silk screen printing on the passivation layer of rear surface, the back side electrocondution slurry used in the present embodiment is the front side silver paste of traditional P type solar cell, then dry 10s to 10min at 100-300 DEG C, makes back side electrocondution slurry dry;
(4) finally silicon chip is formed electrode ohmic contact by infrared heating furnace sintering, the sintering temperature peak value of silicon chip is 850 DEG C and sintering time is 1min.
Meanwhile, the present embodiment additionally provides the N-type silicon chip solar cell formed according to above-described preparation method.The N-type silicon chip solar cell that the present embodiment provides is compared with using the N-type silicon chip solar cell of conventional conductive slurry, the contact resistance of P type emitter electrode is reduced, minority carrier is reduced at the recombination rate of electrocondution slurry lower surface, thus improve open circuit voltage and the short circuit current of battery, and the conversion efficiency of solar cell.
Electrocondution slurry provided by the present invention can form autodoping with silicon chip and contact, thus reduces contact resistance, because the second metal powder in electrocondution slurry and silicon can form lower eutectic temperature and this eutectic temperature is less than the sintering temperature peak value of silicon chip.In sintering process, the point that silicon chip contacts with electrocondution slurry will form liquid phase when sintering temperature reaches peak value, along with temperature reduces again, again formed by the silicon of liquid phase epitaxy melting, foreign atom can be added in the silicon crystal lattice regrowed, or penetrates among silicon chip, thus forms oneself's doping, make to uprise with the doping content of the emitter local area of electrode contact, thus reduce contact resistance; Meanwhile, on emitter, the doping content of all the other most of areas still keeps original concentration; Therefore, this electrocondution slurry can reduce the contact resistance with the P type emitter of N-type silicon chip solar cell, reduce the recombination rate of minority carrier at electrocondution slurry lower surface, improve open circuit voltage and the short circuit current of battery, thus improve the conversion efficiency of N-type silicon chip solar cell.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (17)
1. an electrocondution slurry, it is characterized in that: the composition of this electrocondution slurry and weight percentage are: silver powder 65-94%, the second metal powder 0.1-20%, dopant 0.1-10%, glass dust 0.6-12%, additive 0.1-4% and organic carrier 4-20%, and each composition weight percentage composition sum of this electrocondution slurry is 100%; The eutectic temperature of wherein said second metal powder and silicon is less than the sintering temperature peak value of silicon chip.
2. electrocondution slurry according to claim 1, is characterized in that: the eutectic temperature of described second metal powder and silicon is less than 600 DEG C.
3. electrocondution slurry according to claim 1 and 2, is characterized in that: the second described metal powder is the combination of any one or the combination of any two kinds in aluminium powder, bronze, copper powder, magnesium powder or the combination of any three kinds or four kinds.
4. electrocondution slurry according to claim 3, is characterized in that: the second described metal powder is spherical, sheet or erose aluminium powder and aluminum particle diameter is 1-10 μm.
5. electrocondution slurry according to claim 1, it is characterized in that: described dopant is counter dopant, this dopant be boron, aluminium, magnesium, indium, sow and boron-containing compound, aluminum contained compound, magnesium-containing compound, containing indium compound with containing any one or the combinations two or more arbitrarily of sowing in compound.
6. electrocondution slurry according to claim 5, is characterized in that: described dopant is spherical or sheet, and the particle diameter of dopant is the powder of 0.2-10 μm.
7. electrocondution slurry according to claim 1, is characterized in that: described silver powder is spherical or sheet, and the particle diameter of silver powder is 1-6 μm.
8. electrocondution slurry according to claim 1, it is characterized in that: described glass dust employing particle diameter is the flint glass powder of 0.3-15 μm, the composition of flint glass powder and molar content are: the lead oxide of 35-80%, the silica of 0.5-45%, the boron oxide of 12-50% and the aluminium oxide of 0.1-10%, and the molar content sum of each component is 100%.
9. electrocondution slurry according to claim 1, it is characterized in that: described glass dust adopts particle diameter to be 0.3-15 μm of lead-free glass powder, its composition and molar content are: the aluminium oxide of the boron oxide of the silica of 0.5-25%, the zinc oxide of 20-40%, 15-50%, the bismuth oxide of 15-40%, the barium monoxide of 0.5-10% and 0.1-10%, and the molar content sum of each component is 100%.
10. electrocondution slurry according to claim 1, is characterized in that: described additive is at least one in viscosity modifier, surfactant, stabilizer, dispersant, thickening pole, wetting dispersing agent and defoamer.
11. electrocondution slurries according to claim 1, it is characterized in that: described organic carrier is the mixture of organic resin and solvent, wherein resin is at least one in methylcellulose, ethyl cellulose, carboxymethyl cellulose and hydroxyethylcellulose, and solvent is at least one in terpinol, turpentine oil, carbitol and cyclohexanone.
Electrocondution slurry as described in 12. 1 kinds of employings are as arbitrary in claim 1-11 prepares the method for the P type emitter electrode of N-type silicon chip solar cell, it is characterized in that: its step comprises:
(1) N type semiconductor substrate is provided, the front surface antireflection layer on the P type emitter of described semiconductor substrate containing N type basalis, N-type basalis front surface, P type emitter, the rear surface passivation layer of N-type basalis;
(2) described electrocondution slurry to be printed onto on front surface antireflection layer and to dry, the composition of wherein said electrocondution slurry and weight percentage are: silver powder 65-94%, the second metal powder 0.1-20%, dopant 0.1-10%, glass dust 0.6-12%, additive 0.1-4% and organic carrier 4-20%, and each composition weight percentage composition sum of this electrocondution slurry is 100%; The eutectic temperature of wherein said second metal powder and silicon is less than the sintering temperature peak value of silicon chip;
(3) printed back electrocondution slurry, and dry;
(4) sintering forms electrode ohmic contact.
The method of the P type emitter electrode of 13. preparation N-type silicon chip solar cells according to claim 12, it is characterized in that: the sintering temperature peak ranges in the sintering process of described step (4) is 750-1000 DEG C, sintering time is 30s-5min.
The method of the P type emitter electrode of 14. preparation N-type silicon chip solar cells according to claim 12, it is characterized in that: the front surface antireflection layer in described step (1) is any one or two or more combination layers in silicon nitride layer, silicon oxide layer, alumina layer, titanium oxide layer, indium tin oxide layer, zinc oxide film, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer, and the thickness of front surface antireflection layer is 1-200 nanometer.
The method of the P type emitter electrode of 15. preparation N-type silicon chip solar cells according to claim 12, is characterized in that: the rear surface passivation layer in described step (1) is any one or two or more combination layers in silicon nitride layer, silicon oxide layer, alumina layer, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer.
The method of the P type emitter electrode of 16. preparation N-type silicon chip solar cells according to claim 12, is characterized in that: N type semiconductor substrate used in described step (1) is monocrystalline silicon piece or polysilicon chip.
17. 1 kinds of N-type silicon chip solar cells, is characterized in that: the solar cell of the P type emitter electrode formation of the N-type silicon chip solar cell using the preparation method described in any one of claim 12-16 to prepare.
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