CN114427080A - Copper film plating process for PVD equipment - Google Patents
Copper film plating process for PVD equipment Download PDFInfo
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- CN114427080A CN114427080A CN202210050445.5A CN202210050445A CN114427080A CN 114427080 A CN114427080 A CN 114427080A CN 202210050445 A CN202210050445 A CN 202210050445A CN 114427080 A CN114427080 A CN 114427080A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a copper film plating process of PVD equipment, under the design of the copper film plating process of the PVD equipment, a first coppering film forming cavity and a second coppering film forming cavity are both provided with switchable tracks, the second coppering film forming cavity is used for production daily, after a copper target material in the second coppering film forming cavity is used up, the first coppering film forming cavity is switched for production, the second coppering film forming cavity is opened for replacing the target material, the whole machine is not disconnected, after the target material is installed in the second coppering film forming cavity after 24 hours, the first coppering film forming cavity is switched to the second coppering film forming cavity for production, the running time of the whole machine is prolonged, the maintenance rate of the whole equipment is changed from 5.13% to 3.22%, the maintenance rate of the equipment is reduced, and the production capacity of the equipment is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a copper film plating process of PVD equipment.
Background
In the manufacturing process of semiconductor power devices, PVD is often used to deposit a metal layer on a substrate to form a specific functional film layer, such as a light shielding layer, a gate layer or a source/drain layer in a thin film transistor. The process of PVD (Physical Vapor Deposition) transfers atoms or molecules from a (target) source to the surface of a substrate to form a thin film, and the current mainstream Physical Vapor Deposition process adopts magnetron sputtering coating.
As shown in fig. 1, a schematic diagram of a PVD copper film plating process in the prior art includes a transmission device 11, a vacuum switching device 12, a heating chamber 13, an auxiliary film forming chamber 14, a first copper plating film forming chamber 15, and a second copper plating film forming chamber 16, in a copper film plating process design of an existing PVD device, only the second copper plating film forming chamber 16 may be replaced, after a target material in the second copper plating film forming chamber 16 is used up, a shutdown maintenance is required to replace the target material, the entire production line needs to be shutdown for maintenance, and in addition to a planar target material of an existing copper plating film, an AVACO type or ULVAC type copper target material is provided.
In conclusion, a new copper film plating process of PVD equipment needs to be provided to solve the above technical problems that only the second copper plating film forming chamber can be replaced, after the target material of the second copper plating film forming chamber is used up, the target material needs to be replaced by maintenance in a shutdown manner, the whole production line needs to be maintained in a shutdown manner, the equipment is frequently maintained in a shutdown manner, the equipment maintenance rate is high, and the productivity is short.
Disclosure of Invention
This application provides a PVD equipment copper film plating technology according to prior art problem, can solve among the existing PVD equipment copper film plating technology design, only second copperization filming chamber can trade the rail operation, and the target in second copperization filming chamber is used up the back, need shut down the maintenance and change the target, and whole production line just need shut down the maintenance, and equipment is shut down and is opened the chamber maintenance frequently, and the equipment maintenance rate is higher, causes the problem that the productivity is nervous.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
the embodiment of the invention provides a copper film plating process for PVD equipment, wherein the PVD equipment comprises a cleaning machine, a drying cavity, an auxiliary film forming cavity, a first copper plating film forming cavity and a second copper plating film forming cavity;
the copper film plating process of the PVD equipment comprises the following steps:
step S1, transferring the substrate cleaned by the cleaning machine to the drying chamber;
step S2, after the substrate is dried in the drying cavity, transferring the substrate into the auxiliary film forming cavity to form an auxiliary film layer on the surface of the substrate;
step S3, after the auxiliary film layer is prepared, transferring the substrate from the auxiliary film forming cavity to the first copper-plated film forming cavity, and then transferring the substrate from the first copper-plated film forming cavity to the second copper-plated film forming cavity, so that the substrate can sputter a copper film in the second copper-plated film forming cavity;
step S4, when the second copper plating film forming cavity is in a maintenance stage or the copper target is exhausted, transferring the substrate from the auxiliary film forming cavity or the second copper plating film forming cavity into the first copper plating film forming cavity, so that the substrate sputters a copper film in the first copper plating film forming cavity.
According to a preferred embodiment of the present invention, the process of plating copper film by PVD apparatus further comprises:
under the condition that the second copper plating film forming cavity is in a stage of maintaining or replacing a target, the first copper plating film forming cavity sputters a copper film on the substrate;
and after the first copper plating film forming cavity sputters the copper film on the substrate, outputting the substrate from the first copper plating film forming cavity.
According to a preferred embodiment of the present invention, the process of plating copper film by PVD apparatus further comprises:
transferring the substrate on which the copper film is not sputtered in the second copper plating film forming cavity from the second copper plating film forming cavity into the first copper plating film forming cavity;
and after the first copper plating film forming cavity sputters the copper film on the substrate, outputting the substrate from the first copper plating film forming cavity.
According to a preferred embodiment of the present invention, the copper film plating process of the PVD apparatus further comprises:
after the target material is replaced in the second copper plating film forming cavity, transferring the substrate which is not sputtered with the copper film in the first copper plating film forming cavity from the first copper plating film forming cavity to the second copper plating film forming cavity so as to sputter the copper film in the second copper plating film forming cavity;
and after the second copper plating film forming cavity sputters the copper film on the substrate, transferring the substrate from the second copper plating film forming cavity to the first copper plating film forming cavity, and then outputting the substrate from the first copper plating film forming cavity.
According to a preferred embodiment of the present invention, in step S3, after the second cu plating film forming chamber has sputtered the cu film on the substrate, the substrate is transferred from the second cu plating film forming chamber to the first cu plating film forming chamber, and then the substrate is output from the first cu plating film forming chamber.
According to a preferred embodiment of the present invention, the step S3 includes:
and transferring the substrate into the first copper plating film forming cavity and transferring the substrate into the second copper plating film forming cavity so as to sputter a copper film with a preset thickness in the second copper plating film forming cavity.
According to a preferred embodiment of the present invention, the step S3 includes:
transferring the substrate into the first copper plating film forming cavity, and sputtering a copper film with a first preset thickness in the first copper plating film forming cavity;
and transferring the substrate comprising a part of the copper film with the first preset thickness into the second copper plating film forming cavity so as to sputter the copper film with a second preset thickness in the second copper plating film forming cavity.
According to a preferred embodiment of the present invention, the material of the auxiliary film layer is one or a combination of more than one of molybdenum, titanium, chromium, tungsten and tantalum.
According to a preferred embodiment of the present invention, the PVD apparatus further comprises a transfer apparatus disposed between the cleaning machine and the drying chamber, the transfer apparatus comprising an automatic guided vehicle;
the step S1 includes:
and transferring the substrate cleaned by the cleaning machine to the drying cavity through the automatic guide vehicle.
According to a preferred embodiment of the present invention, the PVD apparatus further includes a vacuum switching apparatus, and the vacuum switching apparatus is configured to evacuate or inject air into any one of the drying chamber, the auxiliary film forming chamber, the first copper plating film forming chamber, and the second copper plating film forming chamber.
The invention has the beneficial effects that: the embodiment of the invention provides a copper film plating process for PVD equipment, which comprises the following processing steps: step S1, transferring the substrate cleaned by the cleaning machine to the drying chamber; step S2, after the substrate is dried in the drying cavity, transferring the substrate into the auxiliary film forming cavity to form an auxiliary film layer on the surface of the substrate; step S3, after the auxiliary film layer is prepared, transferring the substrate from the auxiliary film forming cavity to the first copper-plated film forming cavity, and then transferring the substrate from the first copper-plated film forming cavity to the second copper-plated film forming cavity, so that the substrate can sputter a copper film in the second copper-plated film forming cavity; step S4, when the second copper plating film forming cavity is in a maintenance stage or the copper target is exhausted, transferring the substrate from the auxiliary film forming cavity or the second copper plating film forming cavity into the first copper plating film forming cavity, so that the substrate sputters a copper film in the first copper plating film forming cavity. According to the PVD equipment copper film plating process design, the first copper plating film forming cavity and the second copper plating film forming cavity are both provided with switchable tracks, the second copper plating film forming cavity is used for production, the first copper plating film forming cavity is switched for production after a target material is used up, the target material is replaced by the second copper plating film forming cavity which is opened alone, the whole machine is not stopped, the second copper plating film forming cavity is reset after 24 hours, the first copper plating film forming cavity is switched to the second copper plating film forming cavity for production, the running time of the whole machine is prolonged, the equipment maintenance rate is reduced to 3.22% from 5.13%, the equipment maintenance rate is reduced, and the production capacity of the equipment is improved.
Drawings
FIG. 1 is a schematic diagram of a copper film plating process in a PVD equipment in the prior art.
Fig. 2 and fig. 3 are schematic diagrams of a copper film plating process in a PVD apparatus according to an embodiment of the present invention.
FIG. 4 is a schematic flow chart of a copper film plating process in a PVD apparatus according to an embodiment of the invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals, and broken lines in the drawings indicate that the elements do not exist in the structures, and only the shapes and positions of the structures are explained.
The invention aims at solving the problems that in the existing PVD equipment copper film plating process design, only the second copper plating film forming cavity can be used for rail changing operation, after the target material of the second copper plating film forming cavity is used up, the shutdown maintenance is needed to replace the target material, the whole production line needs to be shut down for maintenance, the equipment is shut down and opened for maintenance frequently, the equipment maintenance rate is higher, and the productivity is short.
Referring to fig. 1, a schematic diagram of a copper film plating process in a PVD apparatus in the prior art is shown. Aiming at the existing design, only the second copper-plated film forming cavity 16 has the rail changing function, the first copper-plated film forming cavity 15 and the second copper-plated film forming cavity 16 are used for simultaneous production of Cu plating films, for example, a copper film with the thickness of 800 angstrom meters needs to be deposited, the first copper-plated film forming cavity 15 deposits the thickness of 400 angstrom meters, and the second copper-plated film forming cavity 16 deposits the thickness of 400 angstrom meters. In this mode, the copper target materials in the first copper plating film forming chamber 15 and the second copper plating film forming chamber 16 can be supplied for only 25 days, and after the target materials are exhausted, the chamber needs to be opened for maintenance, the maintenance and the equipment needs to be recovered for 32Hr (hours), the equipment maintenance rate: 32Hr/(24Hr × 26 days) ═ 5.13%. In addition, as the first copper plating film forming cavity 15 and the second copper plating film forming cavity 16 are both required to be opened for maintenance, the whole production line needs to be stopped, and the problem of short production capacity is caused.
Therefore, the embodiment of the invention provides a copper film plating process for PVD equipment, which comprises the following processing steps: step S1, transferring the substrate cleaned by the cleaning machine to the drying chamber; step S2, after the substrate is dried in the drying cavity, transferring the substrate into the auxiliary film forming cavity to form an auxiliary film layer on the surface of the substrate; step S3, after the auxiliary film layer is prepared, transferring the substrate from the auxiliary film forming cavity to the first copper plating film forming cavity, and then transferring the substrate from the first copper plating film forming cavity to the second copper plating film forming cavity, so that the substrate sputters a copper film in the second copper plating film forming cavity; step S4, when the second copper plating film forming cavity is in a maintenance stage or the copper target is exhausted, transferring the substrate from the auxiliary film forming cavity or the second copper plating film forming cavity into the first copper plating film forming cavity, so that the substrate sputters a copper film in the first copper plating film forming cavity. The substrate of the copper plating process is preferably a glass plate.
Because the first coppering film forming cavity and the second coppering film forming cavity are both provided with switchable tracks, the two coppering film forming cavities can independently produce copper films and can also be matched for use to jointly produce the copper films. The method comprises the following steps that a rail changing function of a first copper-plated film forming cavity is added according to a new design, a second copper-plated film forming cavity is used for producing a copper film in a daily mode, the first copper-plated film forming cavity does not produce the copper film, the first copper-plated film forming cavity is used for producing the copper film after a target material of the second copper-plated film forming cavity is used up, the second copper-plated film forming cavity is used for replacing the target material, the substrate which does not sputter the copper film is transmitted to the second copper-plated film forming cavity from the first copper-plated film forming cavity after the target material of the second copper-plated film forming cavity is replaced, the second copper-plated film forming cavity sputters the copper film, the circulation is carried out, the target material replacing stage of the first copper-plated film forming cavity is carried out after the target material of the first copper-plated film forming cavity is used up, and the whole production line is shut down and maintained at the moment.
Under the copper film plating process design of the PVD equipment of the embodiment, the copper film plating is as follows: the first copper plating film formation chamber (Cu1) and the second copper plating film formation chamber (Cu2) still adopt a single-chamber production formula: (1) the second copper-plating film forming cavity single-cavity production, the copper target material of the second copper-plating film forming cavity has a 13-day use period, the cavity re-machine is maintained for 24Hr (hours), and the production period of the second copper-plating film forming cavity is as follows: (24Hr × 13 days)/24 days) × 13 days — 169 days; (2) the equipment maintenance rate of the first copper plating film forming cavity is as follows: (Cu1 transfer chamber + heating chamber maintenance) + (Cu2 transfer chamber maintenance) + Cu1 maintenance ═ 12Hr/(24Hr 30 days) +3Hr/(13 days × 24Hr) +24Hr/(169 days × 24Hr) ═ 3.22%. According to the data, after the PVD equipment is improved, the adopted copper film plating process reduces the equipment maintenance rate and effectively improves the production capacity of the equipment by adopting the double-cavity rail changing technology. The second copper-plated film forming cavity is used for production in a daily mode, after the target materials are used up, the first copper-plated film forming cavity is switched for production, the second copper-plated film forming cavity is opened to replace the target materials, the whole machine is not stopped, after 24Hr, the second copper-plated film forming cavity is reset, the first copper-plated film forming cavity is switched to the second copper-plated film forming cavity for production, the running time of the whole machine is prolonged, the maintenance rate of equipment is reduced, and therefore the productivity of the equipment is improved.
Specifically, fig. 2 and fig. 3 are schematic diagrams of a copper film plating process of a PVD apparatus according to an embodiment of the present invention. One process in this example requires a specific apparatus, and the arrows in the overall PVD apparatus indicate the direction of process movement. FIG. 3 is a view showing, in combination with FIG. 2, a PVD apparatus including a cleaning machine 27, a transfer apparatus 21, a vacuum switching apparatus 22, a drying chamber 23, an auxiliary film forming chamber 24, a first copper plating film forming chamber 25, and a second copper plating film forming chamber 26; the transfer device 21 is also provided with a turning unit 28. The first copper plating film formation chamber 25 and the second copper plating film formation chamber 26 in this embodiment are each provided with a track change function including a switchable track (as indicated by the vertically downward arrow in fig. 2). The first copper plating film formation chamber 25 in other embodiments may also employ one-way rail transport, and is not particularly limited herein.
The substrate to be coated with the copper film sequentially passes through a cleaning machine 27(HDC), a transmission device 21 (train stocker), a vacuum switching device 22(LUL), a drying cavity 23(H2), an auxiliary film forming cavity 24(S3/CH), a first copper-plating film forming cavity 25(S4/CH) and a second copper-plating film forming cavity 26(ST/CH), and after the copper film on the substrate is sputtered, the substrate returns to pass through the devices and is output to a PVD device. The cleaning machine 27(HDC) in the present embodiment is used to remove dust and particles on the front surface and back side of the substrate film formation; the transfer device 21 (train stocker) is arranged between the washer 27(HDC) and the drying chamber 23(H2), and comprises an automatic guided vehicle; the automatic guide vehicle is used for transferring the substrate to a specific process chamber; the turning unit 28 is a mechanical arm, and is used for turning the substrate horizontally or vertically; the vacuum switching apparatus 22(LUL) is used for evacuating or injecting air into any one of the drying chamber 23(H2), the auxiliary film forming chamber 24(S3/CH), the first copper plating film forming chamber 25(S4/CH), and the second copper plating film forming chamber 26 (ST/CH). The drying chamber 23(H2) is used to further remove moisture from the surface of the substrate and to preheat the substrate.
As shown in fig. 4, an embodiment of the present invention provides a copper film plating process for PVD equipment, including the following steps: step S1, transferring the substrate cleaned by the cleaning machine 27 to the drying chamber 23; step S2, after the substrate is dried in the drying chamber 23, transferring the substrate into the auxiliary film forming chamber 24 to form an auxiliary film layer on the surface of the substrate; step S3, after the auxiliary film layer is completely prepared, transferring the substrate from the auxiliary film forming cavity 24 into the first copper plating film forming cavity, and then transferring the substrate from the first copper plating film forming cavity 25 into the second copper plating film forming cavity 26, so that the substrate sputters a copper film in the second copper plating film forming cavity 26; step S4, when the second copper plating film forming cavity 26 is in the maintenance stage or the copper target is exhausted, transferring the substrate from the auxiliary film forming cavity 24 or the second copper plating film forming cavity 26 into the first copper plating film forming cavity 25, so that the substrate sputters a copper film in the first copper plating film forming cavity 25, referring to fig. 3.
Preferably, the copper film plating process of the PVD device further comprises: under the condition that the second copper plating film forming cavity 26 is in a stage of maintaining or replacing a target, the first copper plating film forming cavity 25 sputters a copper film on the substrate; and after the first copper plating film forming cavity 25 sputters the copper film on the substrate, outputting the substrate from the first copper plating film forming cavity 25.
Preferably, the copper film plating process of the PVD equipment further comprises the following steps: transferring the substrate on which the copper film is not sputtered in the second copper plating film forming chamber 26 from the second copper plating film forming chamber 26 into the first copper plating film forming chamber 25; and after the first copper plating film forming cavity 25 sputters the copper film on the substrate, outputting the substrate from the first copper plating film forming cavity 25.
Preferably, the copper film plating process of the PVD device further comprises: after the target material of the second copper plating film forming cavity 26 is replaced, transferring the substrate which is not sputtered with the copper film in the first copper plating film forming cavity 25 from the first copper plating film forming cavity 25 to the second copper plating film forming cavity 26 so as to sputter the copper film in the second copper plating film forming cavity 26; after the second copper plating film forming cavity 26 sputters the copper film on the substrate, the substrate is transferred from the second copper plating film forming cavity 26 to the first copper plating film forming cavity 25, and then is output from the first copper plating film forming cavity 25.
Preferably, in step S3, after the second cu plating film forming chamber 26 has sputtered the cu film on the substrate, the substrate is transferred from the second cu plating film forming chamber 26 to the first cu plating film forming chamber 25, and then is output from the first cu plating film forming chamber 25.
Preferably, the step S3 includes: the substrate is transferred into the first copper plating film forming cavity 25 and transferred into the second copper plating film forming cavity 26 so as to sputter a copper film with a preset thickness in the second copper plating film forming cavity 26.
Preferably, the step S3 includes: transferring the substrate into the first copper plating film forming cavity 25, and sputtering a copper film with a first preset thickness in the first copper plating film forming cavity 25; and transferring the substrate comprising a part of the copper film with the first preset thickness into the second copper plating film forming cavity 26 so as to sputter the copper film with a second preset thickness in the second copper plating film forming cavity 26.
Preferably, the material of the auxiliary film layer is one or a combination of more than one of molybdenum, titanium, chromium, tungsten and tantalum. Before depositing the copper film, a bottom layer is required to be plated so as to improve the bonding force between the copper film to be deposited and the substrate.
Preferably, the PVD apparatus further comprises a transfer apparatus 21, the transfer apparatus 21 being arranged between the washing machine 27 and the drying chamber 23, the transfer apparatus 21 comprising an automatic guided vehicle; the step S1 includes: the substrate cleaned by the cleaning machine 27 is transferred to the drying chamber 23 by the automatic guided vehicle.
Preferably, the PVD apparatus further comprises a vacuum switching apparatus 22, wherein the vacuum switching apparatus 22 is configured to evacuate or inject air into any one of the drying chamber 23, the auxiliary film forming chamber 24, the first copper plating film forming chamber 25, and the second copper plating film forming chamber 26.
The embodiment of the invention provides a copper film plating process for PVD equipment, which comprises the following processing steps: step S1, transferring the substrate cleaned by the cleaning machine to the drying chamber; step S2, after the substrate is dried in the drying cavity, transferring the substrate into the auxiliary film forming cavity to form an auxiliary film layer on the surface of the substrate; step S3, after the auxiliary film layer is prepared, transferring the substrate from the auxiliary film forming cavity to the first copper-plated film forming cavity, and then transferring the substrate from the first copper-plated film forming cavity to the second copper-plated film forming cavity, so that the substrate can sputter a copper film in the second copper-plated film forming cavity; step S4, when the second copper plating film forming cavity is in a maintenance stage or the copper target is exhausted, transferring the substrate from the auxiliary film forming cavity or the second copper plating film forming cavity into the first copper plating film forming cavity, so that the substrate sputters a copper film in the first copper plating film forming cavity. According to the PVD equipment copper film plating process design, the first copper plating film forming cavity and the second copper plating film forming cavity are both provided with switchable tracks, the second copper plating film forming cavity is used for production, the first copper plating film forming cavity is switched for production after a target material is used up, the target material is replaced by the second copper plating film forming cavity which is opened alone, the whole machine is not stopped, the second copper plating film forming cavity is reset after 24 hours, the first copper plating film forming cavity is switched to the second copper plating film forming cavity for production, the running time of the whole machine is prolonged, the equipment maintenance rate is reduced to 3.22% from 5.13%, the equipment maintenance rate is reduced, and the production capacity of the equipment is improved.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention.
Claims (10)
1. A copper film plating process of PVD equipment is characterized in that the PVD equipment comprises a cleaning machine, a drying cavity, an auxiliary film forming cavity, a first copper plating film forming cavity and a second copper plating film forming cavity;
the copper film plating process of the PVD equipment comprises the following steps:
step S1, transferring the substrate cleaned by the cleaning machine to the drying chamber;
step S2, after the substrate is dried in the drying cavity, transferring the substrate into the auxiliary film forming cavity to form an auxiliary film layer on the surface of the substrate;
step S3, after the auxiliary film layer is prepared, transferring the substrate from the auxiliary film forming cavity to the first copper-plated film forming cavity, and then transferring the substrate from the first copper-plated film forming cavity to the second copper-plated film forming cavity, so that the substrate can sputter a copper film in the second copper-plated film forming cavity;
step S4, when the second copper plating film forming cavity is in a maintenance stage or the copper target is exhausted, transferring the substrate from the auxiliary film forming cavity or the second copper plating film forming cavity into the first copper plating film forming cavity, so that the substrate sputters a copper film in the first copper plating film forming cavity.
2. The PVD apparatus copper plating process of claim 1, further comprising:
under the condition that the second copper plating film forming cavity is in a stage of maintaining or replacing a target, the first copper plating film forming cavity sputters a copper film on the substrate;
and after the first copper plating film forming cavity sputters the copper film on the substrate, outputting the substrate from the first copper plating film forming cavity.
3. The PVD apparatus copper plating process of claim 2, further comprising:
transferring the substrate on which the copper film is not sputtered in the second copper plating film forming cavity from the second copper plating film forming cavity into the first copper plating film forming cavity;
and after the first copper plating film forming cavity sputters the copper film on the substrate, outputting the substrate from the first copper plating film forming cavity.
4. The PVD apparatus copper plating process of claim 2, further comprising:
after the target material is replaced in the second copper plating film forming cavity, transferring the substrate which is not sputtered with the copper film in the first copper plating film forming cavity from the first copper plating film forming cavity to the second copper plating film forming cavity so as to sputter the copper film in the second copper plating film forming cavity;
and after the second copper plating film forming cavity sputters the copper film on the substrate, transferring the substrate from the second copper plating film forming cavity to the first copper plating film forming cavity, and then outputting the substrate from the first copper plating film forming cavity.
5. The PVD apparatus cu plating process according to claim 1, wherein in step S3, after the second cu plating chamber sputters the cu plating film on the substrate, the substrate is transferred from the second cu plating chamber to the first cu plating chamber, and then the substrate is output from the first cu plating chamber.
6. The PVD apparatus copper plating process according to claim 5, wherein the step S3 comprises:
and transferring the substrate into the first copper plating film forming cavity and transferring the substrate into the second copper plating film forming cavity so as to sputter a copper film with a preset thickness in the second copper plating film forming cavity.
7. The PVD apparatus copper plating process according to claim 5, wherein the step S3 comprises:
transferring the substrate into the first copper plating film forming cavity, and sputtering a copper film with a first preset thickness in the first copper plating film forming cavity;
and transferring the substrate comprising a part of the copper film with the first preset thickness into the second copper plating film forming cavity so as to sputter the copper film with a second preset thickness in the second copper plating film forming cavity.
8. The PVD equipment copper plating film process according to claim 1, characterized in that the material of the auxiliary film layer is one or a combination of more than one of molybdenum, titanium, chromium, tungsten and tantalum.
9. The PVD apparatus copper film plating process of claim 1, further comprising a transport apparatus disposed between the cleaning machine and the drying chamber, the transport apparatus comprising an automated guided vehicle;
the step S1 includes:
and transferring the substrate cleaned by the cleaning machine to the drying cavity through the automatic guide vehicle.
10. The PVD apparatus copper film plating process according to claim 9, further comprising a vacuum switching apparatus for evacuating or injecting air into any one of the drying chamber, the auxiliary film forming chamber, the first copper film forming chamber, and the second copper film forming chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210050445.5A CN114427080A (en) | 2022-01-17 | 2022-01-17 | Copper film plating process for PVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210050445.5A CN114427080A (en) | 2022-01-17 | 2022-01-17 | Copper film plating process for PVD equipment |
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| CN114427080A true CN114427080A (en) | 2022-05-03 |
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| CN202210050445.5A Pending CN114427080A (en) | 2022-01-17 | 2022-01-17 | Copper film plating process for PVD equipment |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0741947A (en) * | 1993-07-28 | 1995-02-10 | Hitachi Ltd | Vacuum treating device |
| US5411592A (en) * | 1994-06-06 | 1995-05-02 | Ovonic Battery Company, Inc. | Apparatus for deposition of thin-film, solid state batteries |
| CN111058009A (en) * | 2019-09-25 | 2020-04-24 | 广东汇成真空科技股份有限公司 | Metal foil strip winding type vacuum coating continuous production line |
-
2022
- 2022-01-17 CN CN202210050445.5A patent/CN114427080A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0741947A (en) * | 1993-07-28 | 1995-02-10 | Hitachi Ltd | Vacuum treating device |
| US5411592A (en) * | 1994-06-06 | 1995-05-02 | Ovonic Battery Company, Inc. | Apparatus for deposition of thin-film, solid state batteries |
| CN111058009A (en) * | 2019-09-25 | 2020-04-24 | 广东汇成真空科技股份有限公司 | Metal foil strip winding type vacuum coating continuous production line |
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