CN203222614U - Double-rail magnetron sputtering coating equipped with bisymmetric detachable chambers - Google Patents
Double-rail magnetron sputtering coating equipped with bisymmetric detachable chambers Download PDFInfo
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- CN203222614U CN203222614U CN 201320147545 CN201320147545U CN203222614U CN 203222614 U CN203222614 U CN 203222614U CN 201320147545 CN201320147545 CN 201320147545 CN 201320147545 U CN201320147545 U CN 201320147545U CN 203222614 U CN203222614 U CN 203222614U
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Abstract
The utility model discloses double-rail magnetron sputtering coating equipped with bisymmetric detachable chambers. The equipment comprises a coating chamber unit. The coating chamber unit is composed of a left chamber and a right chamber which are symmetrical to each other on the left and right sides; the left chamber and the right chamber form independent coating chambers, respectively; each coating chamber comprises a target rack and a substrate rack; the substrate racks of the left chamber and the right chamber are located at the middle part of the coating chamber unit and separated by a separator; the target racks of the left chamber and the right chamber are located at the outer side of the coating chamber unit; an opening-closing device is mounted on each target rack. The coating chamber unit can further comprise slide rails; and the target racks are capable of moving along the slide rails. The double-rail magnetron sputtering coating equipped with bisymmetric detachable chambers is very convenient to mount through structuralized component design. The coating chambers can be opened laterally, so that internal maintenance of the coating chamber can be facilitated. The double-rail magnetron sputtering coating equipped with bisymmetric detachable chambers has the advantage that a plurality of coating chamber units can be combined to form continuous coating equipment.
Description
Technical field
The utility model relates to the magnetron sputtering film device.
Background technology
Plate thin film at material surface, can make this kind material have many new physics and chemical property.Vacuum Coating method is a kind of brand-new coating process, owing to thin film preparation process carries out under vacuum condition, so claim Vacuum Coating method.Prepare film under the vacuum, clean environment, film is vulnerable to pollution not, can obtain that compactness is good, purity is high, the uniform thin film layer of thickness, and has film and the matrix adhesion strength is good, rete is firm advantage.Current, almost any material can be coated on other substrate material surfaces by technique for vacuum coating, and this has just opened up more wide prospect for the application of vacuum coating technology in various industrial circles.Magnetron sputtering plating is that electronics accelerates to fly under the acting in conjunction of crossed electric and magnetic field in the process of target and bumps with ar atmo, ionization goes out a large amount of argon ions and electronics, argon ion accelerates the bombardment target under effect of electric field, sputter a large amount of target atom, be neutral target atom or molecule or target ion deposition film forming on matrix.
Magnetron sputtering is exactly to be added in the mutually orthogonal magnetic field and electric field on common cathode sputtering basis, utilize the constraint in magnetic field to change the direction of motion of electronics in geseous discharge, and constraint and prolongation electronic motion track, greatly improve the ionization by collision probability of electron pair working gas molecule or atom and utilize the energy of electronics more fully, thereby make the gas positive ion more effective to the sputter of the caused target atom of bombardment of target.Simultaneously, the electronics that is subjected to crossed electric and magnetic field constraint only could break away from the target near surface when its depleted of energy.Depositing to electronics on the matrix like this, to pass to the energy of matrix very little, makes the temperature rise of matrix slow and remain on the lower degree.
Magnetron sputtering is to utilize the secondary electron that produces to accelerate to fly in the process of target under the effect of magnetic field long-range navigation magnetic force in sputter procedure, be bound near in the plasma body zone of target surface, plasma density is very high in this zone, for the helical movement around target surface under the effect of secondary electron in magnetic field, this electronic motion path is very long, in moving process constantly and the ar atmo ionization that bumps go out a large amount of argon ion bombardment targets, reduce gradually through the energy that repeatedly collides the back electronics, break away from the constraint of magnetic line of force and prolong the electronic motion path, change the electronic motion direction, improve the specific ionization of working gas and effectively utilize the energy of electronics, sputter is the combined process of thermal evaporation and elastic collision.Because gas positive ion bombardment negative electrode target, the position that makes target material surface be bombarded produces the localized hyperthermia district, this district's target material surface reaches vaporization temperature and produces evaporation, and sputter rate then is the function of the target heat of sublimation and bombarding ion energy, and the target atom of effusion will present Sine distribution.When gas positive ion bombardment negative electrode target, directly its energy is passed to certain atom or molecule on the target surface, make this atom or molecule break away near other atom or molecule constraint and the surface of leaving target ejects., the energy shortage of bombarding ion, a generation do not produce sputter if vibrating.When if the bombarding ion energy is very high, the bombarding ion energy is too high and ion implantation phenomenon takes place.For general sputter equipment, the formation of sputter coating is to utilize vacuum glow discharge, accelerates that positive ion makes its bombardment target material surface and the sputtering phenomenon that causes, and the particle that target material surface is emitted deposits on the matrix and film forming.Can produce many effects when the ion bombardment solid surface, except the neutral particle of target, namely atom and molecule finally deposit outside the film forming, and other effect also can produce very big influence to growth for Thin Film.
At present no matter nearly all kinds of vertical magnetron sputtering film device is single cavity coating equipment, the still automatic production line of large-scale tandem, all be take each independently the cavity integral solder form.Design, layout and installation that the complex structure of cavity, inside cavity are formed part, parts and the assembly of various functions often exist multiple inconvenience and contradiction.The structure formation of the most key sputtering target material negative electrode wherein, weight, the structure of cooling water channel and arrangement form, the electric connecting mode of target cathode and cavity outside and the interface arrangement of water coolant, the structural arrangement of target cathode and cavity makes that the installation restriction of target cathode in cavity is more; The pipeline of various process gass is arranged in cavity, it is best that installation form and the configuration in cavity thereof are difficult to reach, thereby influence distribution and the flow field form of process gas in cavity, various processing parameter instabilities when causing sputtering sedimentation make the film quality of deposition produce fluctuation; Multiple zero of the inside cavity of integral solder, in a single day parts install, majority is not easy to dismounting maintenance and long-time running, the plurality of impurities composition deposit buildup that sputter forms, can't effectively remove, make whole inside cavity have clean dead angle, many places, the plurality of impurities particulate swims in the inside cavity space under the vacuum drawn state, be mixed in the middle of the membrane structure of required deposition on the one hand, cause post-depositional membrane quality to descend, various impurity particles are attached to the surface of the drive disk assembly in the various cavitys simultaneously, long-time running causes drive disk assembly stuck, causes equipment failure and influences the thin film deposition process; Because the cavity of integral solder is to arrange and be installed to part, parts and assembly that all various inside cavity are formed various functions on the same cavity as much as possible, the complex structure of cavity, when the film that deposits must heat, also extra heating system need be installed, but when requiring heating system work, can not have influence on the normal operation of whole vacuum system, the local superheating phenomenon that the functions of the equipments assembly that the mounting arrangements of heating system causes more can not occur, therefore, plant complicated cavity configuration to the restriction of heating system mounting arrangements a lot; Equally, because the cavity of integral solder is the part of all various inside cavity being formed various functions, parts and assembly are arranged as much as possible and are installed to together, the complex structure of cavity is added the heating system of installing through comprehensive compromise back, for the normal operation that guarantees whole vacuum system and thin film deposition smoothly, corresponding circulating cooling pipe road system just must be arranged, the complex structure of integral solder cavity is added the heating system of installation, cause cooling line to arrange and install and be difficult to reach reasonable, be unfavorable for the normal operation of whole vacuum system and carrying out smoothly of thin film deposition, cause numerous restrictions of thin film deposition processes process, reduce the quality of institute's deposit film; In addition, the complex structure of integral solder cavity, make the structural arrangement of transmission rig in cavity and installation constraint more, the configuration of aspects such as the structure formation of Work conveyance system, drive line and power system does not just reach the optimal design requirement of thin film deposition, causes workpiece mode of movement instability, carries the process poor controllability; The integral solder cavity is in the day-to-day operation and film deposition process of whole vacuum system; in case the abnormal conditions in equipment operation and the film deposition process occur; be difficult in time follow the tracks of and effectively handle under the most situations of the state of baroque integral solder inside cavity; the maintainability of production process is poor; there is too much restriction; be not easy to take emergence treatment scheme timely; usually need dead halt; clear up reparation completely; prolong equipment maintenance process and event, and strengthened the complicacy of operation.
Summary of the invention
Problem to be solved in the utility model is:
1, solves existing magnetron sputtering plating equipment design complicated problems;
2, solve existing magnetron sputtering plating device fabrication complicated problems;
3, solve existing magnetron sputtering film device complicated problems is installed;
4, solve existing magnetron sputtering plating maintenance of the equipment complicated problems.
For addressing the above problem, the scheme that the utility model adopts is as follows:
The separable cavity magnetron sputtering of compound track disymmetry film device comprises plated film cavity unit.Plated film cavity unit is made up of symmetrical left cavity and right cavity.Left side cavity and right cavity constitute independently plated film chamber respectively.The plated film chamber comprises target frame and substrate frame.The substrate frame of left side cavity and right cavity is positioned at the centre of plated film cavity unit, and the centre separates by dividing plate.The target chord position of left side cavity and right cavity is in the outside of plated film cavity unit.On the target frame closing device is installed.Closing device is driven by hydraulic pressure or air pressure.
Further, above-mentioned plated film cavity unit further comprises slide rail, and the target frame is installed on the slide rail.
The separable cavity magnetron sputtering of compound track disymmetry of the present utility model film device, can comprise single plated film cavity unit, also can comprise plural plated film cavity unit, be connected by segregaion valve between the adjacent plated film cavity unit, form continuous coating device.
Technique effect of the present utility model is as follows:
1, the utility model is different from the plated film chamber that traditional welding technology is made, and adopts the structural components modular design, seals by joint strip between the structural part.The magnetron sputtering plating device structure spare reusability height of this method design.
2, the plated film cavity is symmetrical form, the space availability ratio height.
3, the target frame is equipped with closing device, can side direction open, and namely can carry out as changing the maintenance routinely of target, cleaning inside etc. inside cavity, and maintaining is convenient, has also shortened the needed time of maintaining greatly.
4, the target frame can also can laterally slide along slide rail by target frame pedestal, when needing inside cavity to safeguard, only need with target frame pedestal transversely slide rail remove, and open the target frame by the closing device side direction and namely can carry out as changing the maintenance routinely of target, cleaning inside etc. inside cavity, maintaining is convenient, has also shortened the needed time of maintaining greatly.
5, the target frame is installed on the target frame pedestal, and target frame pedestal is installed on the slide rail, can laterally slide along slide rail, thereby realizes adjusting within the specific limits range.
6, the separable cavity magnetron sputtering of compound track disymmetry of the present utility model film device is made up of a plurality of separate plated film cavity unit, when breaking down when needing repairing in certain plated film chamber, need not stop whole equipment, only need stop unit, fault plated film chamber and get final product.
7, the utility model adopts the structural components modular design, can be so that increase all kinds of baffle mechanisms in cavity, the phenomenon of isolated back of the body diffraction, the quality of raising deposit film.
8, the utility model adopts the structural components modular design, can be so that increase heating installation in cavity, the diversity of realization thin film deposition processes process, the quality of raising institute deposit film.
Description of drawings
Fig. 1 is the inner plan structure synoptic diagram in the plated film cavity unit of the utility model embodiment 1.
Fig. 2 is the plated film cavity unit private side TV structure synoptic diagram of the utility model embodiment 1.
Fig. 3 is the inner plan structure synoptic diagram in the plated film cavity unit of the utility model embodiment 2.
Fig. 4 is the plated film cavity unit private side TV structure synoptic diagram of the utility model embodiment 2.
Fig. 5 is the structural representation that continuous coating device is formed in a plurality of plated film cavity of the utility model unit.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in further details.
Embodiment 1
The separable cavity magnetron sputtering of compound track disymmetry film device comprises plated film cavity unit.Plated film cavity unit as shown in Figure 1 and Figure 2, comprises two substrate frame 3, two target framves 4, base 11, end plate 13, top board 14.Substrate frame 3, target frame 4, end plate 13 are installed on the base 11.Two substrate frame 3, two target framves 4, base 11, end plate 13, top boards 14 are formed symmetrical two cavitys: left cavity 8 and right cavity 9.Left side cavity 8 and right cavity 9 constitute independently plated film chamber respectively.The plated film chamber comprises target frame 4 and substrate frame 3.Substrate frame 3 and target frame 4 constitute the two side in plated film chambeies.The two ends in plated film chamber are by end plate 13 sealings, and the top forms sealed hollow by top board 14 sealings.End plate 13 is made by tongued and grooved flanges.Target 6 by magnetron sputtering is installed on the target frame 4.During work, vacuum is pumped in this plated film chamber.The substrate frame 3 of left side cavity 8 and right cavity 9 is positioned at the centre of plated film cavity unit, and the centre separates by dividing plate 31, and the target frame 4 of left cavity 8 and right cavity 9 is positioned at the outside of plated film cavity unit, and two cavitys form symmetrical structure back-to-back.On the target frame 4 closing device is installed.Closing device is positioned at the outside of left and right sides cavity.Closing device in the present embodiment realizes that by pressing machine 45 pressing machine 45 can be hydropress or pneumatic press, and namely closing device is driven by hydraulic pressure or air pressure.Pressing machine 45 bottoms are installed on the base 11, and the press rods oblique top of pressing machine 45 is in the outside of target frame 4.When inside, plated film chamber needed maintaining, pressing machine 45 drew back target frame 4 laterally, thereby opened the plated film chamber.
The separable cavity magnetron sputtering of compound track disymmetry film device comprises plated film cavity unit.Plated film cavity unit as shown in Figure 3, Figure 4, comprises two substrate frame 3, two target framves 4, base 11, end plate 13, top board 14.Substrate frame 3 is fixed on the base 11 by substrate frame pedestal 32.Target frame 4 is installed on the target frame pedestal 5, and target frame pedestal 5 is installed on the slide rail 12, and slide rail 12 is installed on the base 11.Be that target frame 4 is installed on the slide rail 12, can move along slide rail 12.Two substrate frame 3, two target framves 4, base 11, end plate 13, top boards 14 are formed symmetrical two cavitys: left cavity 8 and right cavity 9.Left side cavity 8 and right cavity 9 constitute independently plated film chamber respectively.The plated film chamber comprises target frame 4 and substrate frame 3.Substrate frame 3 and target frame 4 constitute the two side in plated film chambeies.The two ends in plated film chamber are by end plate 13 sealings, and the top forms sealed hollow by top board 14 sealings.End plate 13 is made by tongued and grooved flanges.Target 6 by magnetron sputtering is installed on the target frame 4.During work, vacuum is pumped in this plated film chamber.The substrate frame 3 of left side cavity 8 and right cavity 9 is positioned at the centre of plated film cavity unit, and the centre separates by dividing plate 31, and the target frame 4 of left cavity 8 and right cavity 9 is positioned at the outside of plated film cavity unit, and two cavitys form symmetrical structure back-to-back.On the target frame 4 closing device is installed.Closing device is positioned at the outside of left and right sides cavity.Closing device in the present embodiment comprises driving stem 41, axle sleeve 42, rotating shaft 43, transmission arm 44, pressing machine 45.One end oblique top of driving stem 41 is on target frame 4, and the other end is fixed on the axle sleeve 42.Axle sleeve 42 is enclosed within outside the rotating shaft 43, can rotate along rotating shaft 43.One end of transmission arm 44 also is fixed on the axle sleeve 42.The press rods of pressing machine 45 withstands on the other end of transmission arm 44.Rotating shaft 43, transmission arm 44, pressing machine 45 are installed on the target frame pedestal 5.Pressing machine 45 can be hydropress or pneumatic press, and namely closing device is driven by hydraulic pressure or air pressure.When inside, plated film chamber needs maintaining, at first that target frame pedestal 5 is outwards movable along slide rail 12, start pressing machine 45 then and make and push up on the press rods, make transmission arm 44 and driving stem 41 press rotating shaft 43 to rotate, thereby draw back target frame 4, thereby open the plated film chamber.
The separable cavity magnetron sputtering of compound track disymmetry of the present utility model film device can comprise single plated film cavity unit, also two or more plated film cavitys unit can be linked together to constitute the magnetron sputtering film device of continuous multi-cavity body.As shown in Figure 5, the separable cavity magnetron sputtering of compound track disymmetry film device comprises a plurality of plated film cavitys unit 1.Separate by segregaion valve 2 between the plated film cavity unit 1.
Closing device among embodiment 1, the embodiment 2 is used for opening the target frame, opens inside, plated film chamber, makes things convenient for the maintaining of inside, plated film chamber.Those skilled in the art will know that this closing device is not limited to the form among embodiment 1 or the embodiment 2.
Explanation is at last, above embodiment is only unrestricted in order to the technical solution of the utility model to be described, other modifications that those of ordinary skills make the technical solution of the utility model or be equal to replacement, only otherwise break away from the spirit and scope of technical solutions of the utility model, all should be encompassed in the middle of the claim scope of the present utility model.
Claims (5)
1. the separable cavity magnetron sputtering of compound track disymmetry film device comprises plated film cavity unit, it is characterized in that, plated film cavity unit is made up of symmetrical left cavity and right cavity, and left cavity and right cavity constitute independently plated film chamber respectively; The plated film chamber comprises target frame and substrate frame; The substrate frame of left side cavity and right cavity is positioned at the centre of plated film cavity unit, and the centre separates by dividing plate; The target chord position of left side cavity and right cavity is in the outside of plated film cavity unit; On the target frame closing device is installed.
2. the separable cavity magnetron sputtering of compound track disymmetry as claimed in claim 1 film device is characterized in that, described plated film cavity unit also comprises slide rail, and the target frame is installed on the slide rail.
3. the separable cavity magnetron sputtering of compound track disymmetry as claimed in claim 1 film device is characterized in that, described closing device is driven by hydraulic pressure or air pressure.
4. the separable cavity magnetron sputtering of compound track disymmetry as claimed in claim 1 film device is characterized in that described closing device comprises: driving stem, axle sleeve, rotating shaft, transmission arm, pressing machine; One end oblique top of driving stem is on the target frame, and the other end is fixed on the axle sleeve; Axle sleeve is enclosed within outside the rotating shaft; One end of transmission arm is fixed on the axle sleeve; The press rods of pressing machine withstands on the other end of transmission arm.
5. the separable cavity magnetron sputtering of compound track disymmetry as claimed in claim 1 film device is characterized in that, this equipment comprises plural plated film cavity unit, is connected by segregaion valve between the adjacent plated film cavity unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320147545 CN203222614U (en) | 2013-03-28 | 2013-03-28 | Double-rail magnetron sputtering coating equipped with bisymmetric detachable chambers |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320147545 CN203222614U (en) | 2013-03-28 | 2013-03-28 | Double-rail magnetron sputtering coating equipped with bisymmetric detachable chambers |
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| Publication Number | Publication Date |
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| CN203222614U true CN203222614U (en) | 2013-10-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320147545 Expired - Fee Related CN203222614U (en) | 2013-03-28 | 2013-03-28 | Double-rail magnetron sputtering coating equipped with bisymmetric detachable chambers |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103147057A (en) * | 2013-03-28 | 2013-06-12 | 有度功能薄膜材料扬州有限公司 | Magnetron sputtering coating device with dissymmetrical separable cavities in compound track |
| CN105506573A (en) * | 2015-12-21 | 2016-04-20 | 河北曹妃甸汉能薄膜太阳能有限公司 | Vacuum operation equipment and method for replacing vacuum equipment consumables |
| CN112962073A (en) * | 2021-02-03 | 2021-06-15 | 东莞耀捷镀膜科技有限公司 | Target sputtering coating device and use method thereof |
-
2013
- 2013-03-28 CN CN 201320147545 patent/CN203222614U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103147057A (en) * | 2013-03-28 | 2013-06-12 | 有度功能薄膜材料扬州有限公司 | Magnetron sputtering coating device with dissymmetrical separable cavities in compound track |
| CN105506573A (en) * | 2015-12-21 | 2016-04-20 | 河北曹妃甸汉能薄膜太阳能有限公司 | Vacuum operation equipment and method for replacing vacuum equipment consumables |
| CN112962073A (en) * | 2021-02-03 | 2021-06-15 | 东莞耀捷镀膜科技有限公司 | Target sputtering coating device and use method thereof |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131002 Termination date: 20150328 |
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| EXPY | Termination of patent right or utility model |