CN114393513A - Central liquid supply semiconductor material surface processing device and use method thereof - Google Patents
Central liquid supply semiconductor material surface processing device and use method thereof Download PDFInfo
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- CN114393513A CN114393513A CN202210081968.6A CN202210081968A CN114393513A CN 114393513 A CN114393513 A CN 114393513A CN 202210081968 A CN202210081968 A CN 202210081968A CN 114393513 A CN114393513 A CN 114393513A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Abstract
The invention discloses a central liquid supply semiconductor material surface processing device and a using method thereof, relates to the field of semiconductor wafer material manufacturing, and particularly relates to a central liquid supply semiconductor material surface processing device and a using method thereof. The invention aims to solve the problems of high cost of the existing chemical mechanical processing equipment and low yield of the processing technology in the processing process of large-size semiconductor wafers. The device comprises a gantry type machine tool body, a pneumatic balance loading device, a central liquid supply rotating main shaft, a central liquid supply machining tool, a vacuum adsorption rotating platform and a polishing liquid circulating supply device; the method comprises the following steps: designing a processing track; fixing the substitute workpiece; sequentially carrying out fixed abrasive machining, chemical mechanical machining and fluid dynamic pressure polishing; the invention can prevent the semiconductor material from being broken and improve the yield. In the machining process, the polishing liquid is pressurized and conveyed to the central liquid supply and supply hole through the pipeline, and the polishing liquid uniformly flows out of the central hole of the machining tool along with rotation. The invention is used for processing large-size semiconductor wafers.
Description
Technical Field
The invention relates to the field of semiconductor wafer material manufacturing, in particular to a central liquid supply semiconductor material surface processing device and a using method thereof.
Background
With the development of science and technology, large-scale integrated circuits have very important promotion effect on the progress of modern science foundation, especially the wide application of chip technology, and the social productivity and the living standard of people are greatly improved. Among them, semiconductor materials have excellent physical properties, and thus become one of the indispensable materials in the field of integrated circuits such as modern chips, and the processing quality of semiconductor materials directly affects the performance of chips. Thus, the quality characteristics of the surface flatness, roughness, etc. of the semiconductor wafer during the manufacturing process have an important influence on the performance of the semiconductor device. Since the processing and manufacturing of semiconductor materials have high economic and commercial value, the search for efficient, high-precision, low-cost manufacturing processes and processing devices is of great interest to the industry.
At present, the processing of the first generation semiconductor materials, represented by silicon, is mainly based on chemical mechanical processing, i.e. the semiconductor materials are subjected to material removal under the mechanical action of the polishing tool and the assistance of chemical components in the polishing solution. The conventional chemical mechanical polishing apparatus is mainly a high-precision plane polishing apparatus in which a disk-type processing tool much larger than a semiconductor wafer material is used, a processed wafer is placed on a polishing disk by a jig, and a polishing liquid is directly sprayed on the polishing disk, and the wafer material is rotated along with the rotation of the polishing disk. In this device, the wafer material is in full contact with the polishing pad, and the material removal efficiency can be controlled by the rotational speed of the polishing pad and the load applied to the wafer. However, in the conventional chemical mechanical polishing apparatus, the polishing liquid is supplied from the outside, and as the polishing disc rotates, the polishing liquid is difficult to be uniformly dispersed into the contact region between the semiconductor wafer and the polishing disc, so that the use efficiency of the polishing liquid is reduced while the material is removed non-uniformly; secondly, when processing a thin semiconductor wafer (thickness less than 0.5mm), in order to prevent the wafer material from brittle fracture due to uneven stress, the rotational flatness of the processing equipment is very high, and thus the rotation precision, material quality, driving mode, and ambient temperature of the material of the polishing disk are strictly required, so the chemical mechanical processing equipment generally applied to ultra-precision processing is very high in cost. In addition, with the application of the third generation semiconductor materials represented by silicon carbide and gallium nitride semiconductor materials in the technical progress, higher requirements are put forward on chemical mechanical processing equipment and processing technology, and especially for the processing of large-size semiconductor wafers, the high cost of the chemical mechanical processing equipment and the low yield of the processing technology are main factors influencing the wide application of the semiconductor materials.
Disclosure of Invention
The invention provides a central liquid supply semiconductor material surface processing device and a using method thereof, aiming at solving the problems of high cost of the existing chemical mechanical processing equipment and low yield of the processing technology in the processing process of large-size semiconductor wafers.
The invention relates to a central liquid supply semiconductor material surface processing device which comprises a gantry type machine tool body, a pneumatic balance loading device, a central liquid supply rotating main shaft, a central liquid supply processing tool, a vacuum adsorption rotating platform and a polishing liquid circulating supply device, wherein the gantry type machine tool body is provided with a plurality of working positions; the gantry type machine tool body comprises an X-axis motion platform, a Y-axis motion platform and a Z-axis motion platform; a pneumatic balance device is arranged on the Z-axis motion platform; a vacuum adsorption rotary platform is arranged on the Y-axis motion platform; the pneumatic balance loading device comprises a loading cylinder, a slide rail, a pneumatic sliding table and a balance cylinder; the pneumatic sliding table is mounted on the sliding rail and slides along the Z-axis direction; the lower part of the pneumatic sliding table is provided with a balance cylinder, and the upper part of the pneumatic sliding table is provided with a loading cylinder; the central liquid supply machining tool is arranged at the tail end of the central liquid supply rotating shaft, and the central liquid supply rotating main shaft is arranged on the pneumatic sliding table through a main shaft clamp; and the polishing solution circulating supply device is arranged at the lower part of the gantry type machine tool body.
The use method of the central liquid supply semiconductor material surface processing device comprises the following steps:
designing a machining track of a central liquid supply machining tool on the surface of a semiconductor material device to be machined according to actual needs, and loading the machining track into a numerical control system of a machine tool;
secondly, mounting the fixed abrasive machining tool on the central liquid supply machining tool, simultaneously placing the semiconductor material device to be machined on a vacuum adsorption rotary platform, and starting an external vacuum device to fasten the semiconductor material device to be machined on the vacuum adsorption rotary platform; adding the grinding and polishing liquid into a liquid storage tank;
thirdly, starting the pneumatic balance loading device, firstly injecting compressed air into the balance cylinder, supplying the compressed air from the outside, controlling the air supply pressure by an electric proportional valve, and enabling the central liquid supply rotating shaft to float on the surface of the semiconductor material device to be processed after starting;
fourthly, starting a liquid supply pump and a stirring device, pressurizing and filtering the grinding and polishing liquid, and then injecting the grinding and polishing liquid into a polishing liquid supply port through a pipeline;
fifthly, moving the X-axis motion platform, the Y-axis motion platform and the Z-axis motion platform respectively under the control of a numerical control system of the machine tool to move the central liquid supply machining tool to the initial position of a machining track; then starting the central liquid supply processing tool to rotate, and applying pressure to the surface of the semiconductor material device to be processed;
sixthly, repeating the third step to the fifth step to carry out fixed abrasive processing on the semiconductor material device to be processed until the thickness and the surface quality of the semiconductor material device to be processed meet the process design requirements, replacing a fixed abrasive processing tool with a chemical mechanical processing tool, and replacing polishing liquid with chemical mechanical polishing liquid;
seventhly, repeating the third step to the fifth step to carry out chemical mechanical processing on the semiconductor material device to be processed until the surface flatness and the roughness of the semiconductor material device to be processed meet the process design requirements, and replacing a chemical mechanical processing tool with a disc type fluid dynamic pressure polishing pad;
and eighthly, carrying out fluid dynamic pressure polishing on the semiconductor material device to be processed, forming a fluid dynamic pressure liquid film under the action of the liquid supply pressure and the rotation of the processing tool, separating the processing tool from the processed surface, and repeating the third step to the fifth step until the surface roughness of the semiconductor material device to be processed meets the process design requirement, so as to finish the processing of the whole semiconductor material surface.
The invention has the beneficial effects that:
the processing device of the invention uses a disc-shaped processing tool with a size smaller than that of a processed wafer, and evenly removes the surface material of the wafer according to a certain track under the control of a numerical control system. The device adopts the mode that the center supplied liquid, directly carries the polishing solution to the contact area between machining tool and the machined surface in, then along with the rotatory radial outflow from the machining tool quotation of instrument, then recycles, filters the back reuse, will greatly improve the utilization ratio of polishing solution like this, reduces the pollution of chemical polishing solution to the environment simultaneously. In addition, the device adopts the feeding mode of two Z axles, can realize under pneumatic balancing unit's control that the constant force contacts between processing tool and the processing surface, and then can effectively avoid processing big size thin-walled wafer and cause fracture, breakage because of stress concentration, improve the yields of wafer processing technology.
Drawings
FIG. 1 is a schematic structural diagram of a central liquid supply semiconductor material surface processing device;
FIG. 2 is a schematic structural diagram of a pneumatic balance loading device;
FIG. 3 is a schematic processing diagram of a surface processing apparatus for a central liquid-supply semiconductor material.
Detailed Description
The technical solution of the present invention is not limited to the following specific embodiments, but includes any combination of the specific embodiments.
The first embodiment is as follows: the embodiment is described with reference to the accompanying drawings, and the central liquid supply semiconductor material surface processing device of the embodiment comprises a gantry type machine tool body 1, a pneumatic balance loading device 4, a central liquid supply rotating main shaft 5, a central liquid supply processing tool 6, a vacuum adsorption rotating platform 8 and a polishing liquid circulating supply device 10; the gantry type machine tool body 1 comprises an X-axis motion platform 2, a Y-axis motion platform 9 and a Z-axis motion platform 3; a pneumatic balance device 4 is arranged on the Z-axis motion platform 3; a vacuum adsorption rotary platform 8 is arranged on the Y-axis motion platform 9; the pneumatic balance loading device 4 comprises a loading cylinder 401, a slide rail 402, a pneumatic sliding table 403 and a balance cylinder 404; the pneumatic sliding table 403 is mounted on the sliding rail 402 and slides along the Z-axis direction; a balance cylinder 404 is arranged at the lower part of the pneumatic sliding table 403, and a loading cylinder 401 is arranged at the upper part of the pneumatic sliding table 403; the central liquid supply machining tool 6 is arranged at the tail end of a central liquid supply rotating shaft 5, and the central liquid supply rotating main shaft 5 is arranged on a pneumatic sliding table 403 through a main shaft clamp 406; the polishing solution circulating supply device 10 is arranged at the lower part of the gantry type machine tool body 1.
In the embodiment, the X-axis motion platform, the Y-axis motion platform and the Z-axis motion platform linearly move in a mechanical motion mode under the control of the numerical control system; the linkage mechanism can be driven by a traditional lead screw-slide rail system or a linear motor, and can respectively realize the linkage in three directions of an X/Y/Z axis in space under the control of a numerical control system.
In the embodiment, the balance cylinder is driven by external compressed gas to balance the gravity of the pneumatic sliding table and the central liquid supply rotating main shaft, and the minimum gas supply pressure of the cylinder can be obtained through calculation; the loading cylinder can apply a constant force load to the machining tool under the control of external compressed gas, and the magnitude of the constant force load is controllable and ranges from 0N to 200N; the pneumatic sliding table can move in the Z direction by controlling the supply pressure of compressed air in the upper air cylinder and the lower air cylinder, and the pneumatic sliding table and a Z shaft of the gantry type processing device form a double-Z-shaft moving device together, so that constant-force contact control between a processing tool and a semiconductor material is realized.
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: the upper end of the central liquid supply rotary main shaft 5 is provided with a polishing liquid supply port 405; the rotating speed of the central liquid supply rotating main shaft 5 is 50-10000 r/min. The rest is the same as the first embodiment.
The polishing solution is pressurized and then supplied to the polishing solution supply port on the central solution supply rotating spindle through a pipeline, flows out from the center of the central solution supply processing tool, and is uniformly dispersed to the contact area between the central solution supply processing tool and the semiconductor material device to be processed along with the rotation of the polishing tool.
The third concrete implementation mode: the present embodiment differs from the first or second embodiment in that: the vacuum adsorption rotary platform 8 is used for fixing the semiconductor material device 7 to be processed through vacuum negative pressure adsorption. The others are the same as in the first or second embodiment.
The fourth concrete implementation mode: the difference between this embodiment mode and one of the first to third embodiment modes is: the center of the central liquid supply rotating shaft 5 is provided with a central liquid supply hole, and the central liquid supply hole is communicated with the polishing liquid supply port 405. The rest is the same as one of the first to third embodiments.
In this embodiment, the semiconductor material device to be processed may be driven to rotate by a rotating device inside the vacuum adsorption rotating platform.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is: the central liquid supply processing tool 6 is a processing tool with a central hole, and a polishing pad 601 is arranged at the tail end of the central liquid supply processing tool 6; the equivalent diameter size of the central liquid supply machining tool 6 is 10-200 mm. The rest is the same as one of the first to fourth embodiments.
According to the technical requirements of the semiconductor material in different processing stages, the polishing pad can be respectively provided with a fixed abrasive grinding and polishing pad with a central hole, a chemical mechanical polishing pad and a disc type fluid dynamic pressure polishing pad so as to finish thinning, polishing and ultra-precise polishing of the semiconductor material. The central liquid-feeding processing tool can be designed into a circular, square, polygonal or special-shaped processing tool with a central hole according to processing requirements.
The sixth specific implementation mode: the difference between this embodiment and one of the first to fifth embodiments is: the polishing solution circulation supply device 10 comprises a liquid storage tank 101, a liquid supply pump 102 and a stirring device 103; the liquid supply pump 102 is arranged on the upper surface of the liquid storage tank 101, the liquid supply pump 102 is communicated with the polishing liquid supply port 405 through a pipeline, and the stirring device 103 is arranged in the liquid storage tank 101; the liquid supply pressure of the liquid supply pump 102 is 0.05-5 Mpa. The rest is the same as one of the first to fifth embodiments.
In this embodiment, the polishing liquid can be pressurized by the liquid supply pump, then conveyed to the spindle liquid supply hole through the pipeline, and flows out from the center holes of the processing tool and the polishing pad, and then recovered to the liquid storage tank at the lower part of the processing device. The polishing solution in the liquid storage tank is stirred, dispersed, pressurized and filtered, and then conveyed to the polishing solution supply hole of the spindle again, so that the polishing solution is recycled, wherein the liquid storage tank is used for collecting the polishing solution after processing and use, the stirring device is used for dispersing abrasive particles in the polishing solution, the polishing solution is pressurized by the liquid supply pump, and then conveyed to the polishing solution supply hole of the central liquid supply rotating spindle after passing through the filtering device, and the liquid supply pressure of the liquid supply pump can be adjusted through a motor.
The seventh embodiment: the difference between this embodiment and one of the first to sixth embodiments is: the rotating speed of the vacuum adsorption rotating platform 8 is 1-100 r/min. The rest is the same as one of the first to sixth embodiments.
The specific implementation mode is eight: the use method of the central liquid supply semiconductor material surface processing device comprises the following steps:
firstly, designing a machining track of a central liquid supply machining tool 6 on the surface of a semiconductor material device 7 to be machined according to actual needs, and loading the machining track into a numerical control system of a machine tool;
secondly, mounting the fixed abrasive machining tool on the central liquid supply machining tool 6, simultaneously placing the semiconductor material device 7 to be machined on a vacuum adsorption rotary platform 8, and starting an external vacuum device to fasten the semiconductor material device 7 to be machined on the vacuum adsorption rotary platform 8; adding the polishing liquid into a liquid storage tank 101;
thirdly, starting the pneumatic balance loading device 4, firstly injecting compressed air into the balance cylinder 401, supplying the compressed air from the outside, controlling the air supply pressure by an electric proportional valve, and floating the central liquid supply rotating shaft 5 on the surface of the semiconductor material device 7 to be processed after starting;
fourthly, the liquid supply pump 102 and the stirring device 103 are started, and the grinding polishing liquid is pressurized, filtered and then injected into the polishing liquid supply port 405 through a pipeline;
fifthly, moving the X-axis motion platform 2, the Y-axis motion platform 9 and the Z-axis motion platform 3 respectively under the control of a numerical control system of the machine tool to move the central liquid supply machining tool 6 to the initial position of a machining track; then starting the central liquid supply processing tool 6 to rotate, and applying pressure to the surface of the semiconductor material device 7 to be processed;
sixthly, repeating the third step to the fifth step to carry out fixed abrasive machining on the semiconductor material device 7 to be machined until the thickness and the surface quality of the semiconductor material device 7 to be machined meet the process design requirements, replacing a fixed abrasive machining tool with a chemical mechanical machining tool, and replacing polishing liquid with chemical mechanical polishing liquid;
seventhly, repeating the third step to the fifth step to carry out chemical mechanical processing on the semiconductor material device 7 to be processed until the surface flatness and the roughness of the semiconductor material device 7 to be processed meet the process design requirements, and replacing a chemical mechanical processing tool with a disc type fluid dynamic pressure polishing pad;
eighthly, carrying out fluid dynamic pressure polishing on the semiconductor material device 7 to be processed, forming a fluid dynamic pressure liquid film under the action of liquid supply pressure and rotation of the processing tool, separating the processing tool from the processed surface, and repeating the third step to the fifth step until the surface roughness of the semiconductor material device 7 to be processed meets the process design requirement, so as to finish the processing of the whole semiconductor material surface.
In the ultra-precision machining process applying the disc type fluid dynamic pressure polishing process, the polishing solution flows out from the center of the machining tool and rotates at a high speed along with the polishing tool, so that a liquid film gap is formed between the machining tool and the surface of the machined wafer, and the nano-scale material on the surface of the semiconductor material is removed in the liquid film gap under the action of the fluid dynamic pressure effect, so that the ultra-precision machining of the surface of the wafer is completed;
in the embodiment, in order to quickly reduce the thickness of the wafer and remove the material of the residual damage layer on the surface of the wafer in the thinning stage of the semiconductor material, the center liquid supply consolidation abrasive grinding and polishing pad can be replaced by a chemical mechanical polishing pad in the precision processing stage, and meanwhile, special polishing liquid with chemical auxiliary effect is used; and a disc type fluid dynamic pressure polishing pad can be installed in the ultra-precision machining stage to finish the ultra-precision polishing of the surface of the wafer.
The device can realize systematic processing device and processing process flow of grinding and polishing, chemical mechanical polishing and ultra-precision processing of the surface of the semiconductor wafer.
In step eight of this embodiment, a chemical mechanical polishing solution is still used; before the machining is started, the tool and the workpiece are in contact, the polishing liquid is injected from the center to generate static pressure, and the tool rotates to generate hydrodynamic pressure; after a period of time, under the combined action of static pressure and dynamic pressure, a stable liquid film is formed between the tool and the workpiece, so that the automatic separation of the tool and the workpiece is realized.
The polishing solution in the embodiment is a deionized water solution, and cerium oxide, aluminum oxide or diamond abrasive particles can be added according to working conditions; the chemical mechanical polishing solution is an alkaline mixed solution containing one or more of cerium oxide, aluminum oxide and diamond abrasive grains, and the grain size range of the abrasive grains is as follows: 5-500 nm, and the mass fraction of the abrasive particles in the polishing solution is 5-20%. In this case, deionized water was used as the polishing slurry, and an alumina alkaline chemical mechanical polishing slurry with a concentration of 10% was used.
The specific implementation method nine: the eighth embodiment is different from the eighth embodiment in that: in the first step, the processing track is a grid track, a spiral track or a random track. The rest is the same as the embodiment eight.
The detailed implementation mode is ten: the present embodiment differs from the embodiment eight or nine in that: the parameters of the fixed abrasive processing in the sixth step are as follows: the rotating speed of the central liquid supply machining tool 6 is 100r/min, and the pressure is 20N; the parameters of the chemical mechanical processing in the step seven are as follows: the rotating speed of the central liquid supply processing tool 6 is 500r/min, and the supply pressure of the polishing liquid is 0.1 Mpa; eighthly, the parameters of the fluid dynamic pressure polishing are as follows: the rotation speed of the central liquid supply processing tool 6 is 5000r/min, and the supply pressure of the polishing liquid is 0.5 Mpa. The others are the same as the embodiments eight or nine.
The following examples were used to demonstrate the beneficial effects of the present invention:
example (b): the use method of the central liquid supply semiconductor material surface processing device comprises the following steps:
according to the processing process flow of the semiconductor wafer material, firstly, grinding and polishing process processing is carried out, the residual damage layer material on the surface of a blank is quickly removed, meanwhile, the thickness of the wafer is reduced, then, chemical mechanical polishing is carried out to improve the surface flatness of the semiconductor material, and finally, fluid dynamic pressure ultra-precision polishing is carried out;
installing a fixed abrasive grinding and polishing tool with a central hole on a central liquid supply processing tool 6, meanwhile, placing a semiconductor material device 7 to be processed on a vacuum adsorption rotary platform 8, and starting an external vacuum device to fasten the semiconductor material device 7 to be processed on the vacuum adsorption rotary platform 8;
starting a pneumatic balancing device, injecting compressed air into a balancing cylinder 401, supplying the compressed air from the outside, realizing the accurate control of air supply pressure under the control of an electric proportional valve, and enabling a central liquid supply rotating shaft 5 to float on the surface of a wafer after starting;
planning a processing track of the central liquid supply processing tool 6 on the surface of the semiconductor material device 7 to be processed, and uniformly processing the whole wafer surface by using a grid track 602 to achieve the purpose of thinning in the embodiment, so that a grid track numerical control processing program is compiled and loaded into a numerical control system of the device;
adding a pre-prepared polishing solution into the liquid storage tank 101, starting the liquid supply pump 102 and the stirring device 103, pressurizing and filtering the polishing solution, and injecting the polishing solution into the polishing solution supply port 405 through a pipeline;
respectively moving the X-axis motion platform 2, the Y-axis motion platform 9 and the Z-axis motion platform 3 under the control of a numerical control system of the machine tool to move the central liquid supply machining tool 6 to the initial position of the grid machining track; then starting the rotation of the processing tool, controlling the rotation speed to be 100r/min, simultaneously giving a certain pressure to the loading cylinder to enable the processing tool to generate downward pressure, and acting on the surface of the semiconductor material device 7 to be processed, wherein the pressure is 20N; if the semiconductor material device 7 to be processed is a circular wafer, the vacuum adsorption rotary platform 8 can be started to rotate the semiconductor material 7, and the purpose of uniformly processing the whole semiconductor material surface is also achieved under the synergistic action of the processing tool;
processing for many times according to the method, and when the semiconductor material 7 reaches the thickness and the surface quality of the process design, replacing the fixed abrasive processing tool by using a chemical mechanical processing tool, and simultaneously using chemical mechanical polishing solution;
according to the above method, the contact force between the processing tool and the surface of the wafer to be processed is controlled by changing the gas supply pressure of the loading cylinder 401; at this time, the rotation speed of the processing tool is 500r/min, and the supply pressure of the polishing solution is 0.1 MPa; under the control of a numerical control system, the central liquid supply processing tool 6 uniformly polishes the whole surface of the semiconductor material 7 by the same grid track;
after polishing for many times, when the surface flatness and roughness of the semiconductor material 7 meet the process design requirements, replacing the machining tool with a disc type fluid dynamic pressure polishing pad;
in the process stage, the rotating speed of the processing tool and the liquid supply pressure of the polishing liquid are increased, the rotating speed of the processing tool is 5000r/min, the liquid supply pressure is 0.5Mpa, under the action of the liquid supply pressure and the rotation of the processing tool, a fluid dynamic pressure liquid film is formed, the processing tool is separated from the processing surface, the surface material of the wafer is removed mainly by means of the hydrodynamic pressure between the processing tool and the processed wafer, and therefore the purpose of reducing the roughness of the surface of the wafer is achieved;
similarly, under the control of the numerical control system of the machine tool, the whole wafer surface is uniformly processed by the track of the grid; after multiple times of processing, the processing of the whole semiconductor material surface process flow is completed after the surface roughness meets the process design requirement.
The polishing solution is deionized water solution, and cerium oxide, aluminum oxide or diamond abrasive particles can be added according to working conditions; the chemical mechanical polishing solution is an alkaline mixed solution containing one or more of cerium oxide, aluminum oxide and diamond abrasive grains, and the grain size range of the abrasive grains is as follows: 5-500 nm, and the mass fraction of the abrasive particles in the polishing solution is 5-20%. In this case, deionized water was used as the polishing slurry, and an alumina alkaline chemical mechanical polishing slurry with a concentration of 10% was used.
Claims (10)
1. A central liquid supply semiconductor material surface processing device is characterized by comprising a gantry type machine tool body (1), a pneumatic balance loading device (4), a central liquid supply rotary spindle (5), a central liquid supply processing tool (6), a vacuum adsorption rotary platform (8) and a polishing liquid circulating supply device (10); the gantry type machine tool body (1) comprises an X-axis motion platform (2), a Y-axis motion platform (9) and a Z-axis motion platform (3); a pneumatic balance device (4) is arranged on the Z-axis motion platform (3); a vacuum adsorption rotary platform (8) is arranged on the Y-axis moving platform (9); the pneumatic balance loading device (4) comprises a loading cylinder (401), a sliding rail (402), a pneumatic sliding table (403) and a balance cylinder (404); the pneumatic sliding table (403) is mounted on the sliding rail (402) and slides along the Z-axis direction; a balance cylinder (404) is installed at the lower part of the pneumatic sliding table (403), and a loading cylinder (401) is installed at the upper part of the pneumatic sliding table (403); the central liquid supply machining tool (6) is arranged at the tail end of a central liquid supply rotating shaft (5), and the central liquid supply rotating main shaft (5) is arranged on a pneumatic sliding table (403) through a main shaft clamp (406); the polishing solution circulating supply device (10) is arranged at the lower part of the gantry type machine tool body (1).
2. A central liquid supply semiconductor material surface processing device according to claim 1, characterized in that the upper end of the central liquid supply rotary spindle (5) is provided with a polishing liquid inlet (405); the rotating speed of the central liquid supply rotating main shaft (5) is 50-10000 r/min.
3. A central liquid supply semiconductor material surface processing device according to claim 2, characterized in that the vacuum suction rotary platform (8) fastens the semiconductor material device (7) to be processed by vacuum suction.
4. A central liquid supply semiconductor material surface processing device according to claim 1, characterized in that the central axis of the central liquid supply rotary shaft (5) is provided with a central liquid supply hole, and the central liquid supply hole is communicated with the polishing liquid inlet (405).
5. A central liquid supply semiconductor material surface processing device according to claim 1, characterized in that the central liquid supply processing tool (6) is a processing tool having a central hole, and a polishing pad (601) is mounted at the end of the central liquid supply processing tool (6); the equivalent diameter size of the central liquid supply machining tool (6) is 10-200 mm.
6. A central liquid supply semiconductor material surface processing device according to claim 1, characterized in that the polishing liquid circulation supply device (10) comprises a liquid storage tank (101), a liquid supply pump (102) and a stirring device (103); the liquid supply pump (102) is arranged on the upper surface of the liquid storage tank (101), the liquid supply pump (102) is communicated with the polishing liquid inlet (405) through a pipeline, and the stirring device (103) is arranged in the liquid storage tank (101); the liquid supply pressure of the liquid supply pump (102) is 0.05-5 Mpa.
7. The apparatus for processing the surface of a semiconductor material with a central liquid supply according to claim 1, wherein the rotation speed of the vacuum adsorption rotary platform (8) is 1-100 r/min.
8. The use method of the central liquid supply semiconductor material surface processing device according to claim 1, which comprises the following steps:
designing a machining track of a central liquid supply machining tool (6) on the surface of a semiconductor material device (7) to be machined according to actual needs, and loading the machining track into a numerical control system of a machine tool;
secondly, mounting the fixed abrasive machining tool on a central liquid supply machining tool (6), simultaneously placing the semiconductor material device (7) to be machined on a vacuum adsorption rotary platform (8), and starting an external vacuum device to fasten the semiconductor material device (7) to be machined on the vacuum adsorption rotary platform (8); adding the polishing liquid into a liquid storage tank (101);
thirdly, starting the pneumatic balance loading device (4), firstly injecting compressed air into the balance cylinder (401), supplying the compressed air from the outside, controlling the air supply pressure by an electric proportional valve, and floating the central liquid supply rotating shaft (5) on the surface of the semiconductor material device (7) to be processed after starting;
fourthly, starting a liquid supply pump (102) and a stirring device (103), pressurizing and filtering the polishing liquid, and injecting the polishing liquid into a polishing liquid supply port (405) through a pipeline;
fifthly, moving the X-axis motion platform (2), the Y-axis motion platform (9) and the Z-axis motion platform (3) respectively under the control of a numerical control system of the machine tool to move the central liquid supply machining tool (6) to the initial position of a machining track; then starting the rotation of the central liquid supply processing tool (6), and simultaneously applying pressure to the surface of the semiconductor material device (7) to be processed;
sixthly, repeating the third step to the fifth step to carry out fixed abrasive machining on the semiconductor material device (7) to be machined until the thickness and the surface quality of the semiconductor material device (7) to be machined meet the process design requirements, replacing a fixed abrasive machining tool with a chemical mechanical machining tool, and replacing polishing liquid with chemical mechanical polishing liquid;
seventhly, repeating the third step to the fifth step to carry out chemical mechanical processing on the semiconductor material device (7) to be processed until the surface flatness and the roughness of the semiconductor material device (7) to be processed meet the process design requirements, and replacing a chemical mechanical processing tool with a disc type fluid dynamic pressure polishing pad;
eighthly, carrying out fluid dynamic pressure polishing on the semiconductor material device (7) to be processed, forming a fluid dynamic pressure liquid film under the action of liquid supply pressure and rotation of the processing tool, separating the processing tool from the processed surface, and repeating the third step to the fifth step until the surface roughness of the semiconductor material device (7) to be processed meets the process design requirement, so as to finish the processing of the whole semiconductor material surface.
9. The method as claimed in claim 8, wherein the machining path in step one is a grid path, a spiral path or a random path.
10. The method according to claim 8, wherein the parameters of the fixed abrasive machining in the sixth step are as follows: the rotating speed of the central liquid supply machining tool (6) is 100r/min, and the pressure is 20N; the parameters of the chemical mechanical processing in the step seven are as follows: the rotating speed of the central liquid supply processing tool (6) is 500r/min, and the supply pressure of the polishing liquid is 0.1 Mpa; eighthly, the parameters of the fluid dynamic pressure polishing are as follows: the rotation speed of the central liquid supply processing tool (6) is 5000r/min, and the supply pressure of the polishing liquid is 0.5 Mpa.
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