CN114373749A - 一种消除负阻效应的横向rc-igbt器件结构 - Google Patents
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Abstract
本发明提供了一种消除负阻效应的横向RC‑IGBT器件结构。该横向RC‑IGBT器件与在传统的横向IGBT器件相比，在器件的漂移区中心处存在氧化物隔离区域，且在该氧化物隔离区域内部存在一个低掺杂的硅区域。由于上述氧化物的隔离作用，在氧化物下方是传统的IGBT区域，因此可以正常导通正向导通模式的双极电流，且不存在负阻效应。在氧化物上方是续流二极管区域，因此可以正常导通反向导通模式的双极电流。通过调整氧化物上方和下方所占面积的比例，可以调整IGBT和续流二极管的性能分布。
Description
技术领域
本发明涉及半导体技术领域，具体而言，涉及一种消除负阻效应的横向RC-IGBT器件结构。
背景技术
横向绝缘栅双极型晶体管(LIGBT)，是一种可以兼容CMOS工艺的功率器件，其特点是可以由电压控制大电流的导通和关断。由于人们对芯片尺寸和功率密度的要求不断增加，因此产生了逆导型横向绝缘栅双极型晶体管(RC-LIGBT)。RC-LIGBT器件具有正向和反向的电流导通能力，因此在实际使用过程中就不需要再额外并联续流二极管使用。
在正向导通初期，传统的RC-LIGBT会由于空穴电流出现的延迟而引发负阻效应，这对多个RC-LIGBT并联使用的稳定性造成威胁。因此需要提出消除负阻效应的方法。
在正向阻断模式下，传统的RC-LIGBT主要靠漂移区的耗尽来承担电场，因此耐压水平不高。漂移区内刻蚀填充氧化物沟槽是一种提升耐压的方法，该方法采用氧化物来承受电场，平缓电场线分布，因此是一种有效的手段。
发明内容
本发明的主要目的在于提出一种消除负阻效应的横向RC-IGBT器件结构，以解决现有技术中的传统的RC-LIGBT的负阻效应，从而提高器件可靠性的问题。该RC-LIGBT 器件与传统器件相比，该横向RC-IGBT器件与在传统的横向IGBT器件相比，在器件的漂移区中心处存在氧化物隔离区域，且在该氧化物隔离区域内部存在一个低掺杂的硅区域。由于上述氧化物的隔离作用，在氧化物下方是传统的IGBT区域，因此可以正常导通正向导通模式的双极电流，且不存在负阻效应。在氧化物上方是续流二极管区域，因此可以正常导通反向导通模式的双极电流。通过调整氧化物上方和下方所占面积的比例，可以调整IGBT和续流二极管的性能分布。
作为优选，所述的RC-LIGBT器件的元胞宽度为17μm，有源区深度为25μm。
作为优选，所述的RC-LIGBT器件的氧化物沟槽深度为20μm。
作为优选，所述的RC-LIGBT器件所述的氧化物沟槽的侧墙和底部的厚度为2μm。
作为优选，所述的离子注入的N型阴极区和P型阳极区的掺杂浓度为1×1018cm-3。
本发明的有益效果在于：由于上述的氧化物沟槽将器件的IGBT区域和续流二极管区域隔离开，所以提出的RC-LIGBT不存在正向导通初期的负阻效应。而且氧化物沟槽的存在有益于器件耐压水平的提升。
附图说明
图1示出了传统RC-LIGBT结构示意图；
图2示出了基于本发明设计的RC-LIGBT结构示意图；
图3为选用的SOI基底；
图4为步骤③得到的产物；
图5为步骤④得到的产物。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，以下结合附图对本发明进行具体阐述。
传统RC-LIGBT结构如图1所示，本发明提出的RC-LIGBT半元胞结构如图2所示，与传统RC-LIGBT相比，本发明提出的RC-IGBT不同之处在于用氧化物将IGBT区域和续流二极管区域隔离开。如图3～5所示，其背面结构具体制作步骤如下：
①.选用SOI基底，元胞宽度为17μm，SOI上方硅薄膜的厚度为25μm；N-漂移区1浓度为5.0×1014cm-3，栅氧化层厚度为0.05μm；
②.刻蚀、氧化形成沟槽，分别形成栅氧沟槽和漂移区沟槽。
③.向栅氧沟槽中填充多晶硅作电极，向漂移区沟槽采用化学气相淀积方法生成硅薄膜，形成N-漂移区2。
④.采用离子注入的方式形成高斯分布的发射极一侧的有源区和集电极一侧的 P型集电区和N型缓冲层。
⑤.制作电极。
显然，本领域的技术人员可以对本发明进行各种改动和变形而不脱离本发明的精神和范围。应注意到的是，以上所述仅为本发明的具体实施例，并不限制本发明，凡在本发明的精神和原则之内，所做的调制和优化，皆应属本发明权利要求的涵盖范围。
Claims (10)
1.一种消除负阻效应的横向RC-IGBT器件结构，其特征在于，在传统的横向IGBT器件的漂移区中心顶部设置氧化物隔离区域，隔离区域为沟槽形状，在氧化物下方是N-漂移区1，在氧化物上方是N-漂移区2，这两个区域都是低掺杂区域；在N-漂移区1的下方是SOI层，在SOI层的下方是P-基底；在N-漂移区2的靠近发射极一侧通过离子注入的方式形成P型阳极区域，在N-漂移区2的靠近集电极一侧通过离子注入的方式形成N型阴极区域。
2.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的横向RC-IGBT器件的元胞宽度为10～50μm，有源区深度为5～40μm。
3.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的横向RC-IGBT器件的氧化物沟槽深度为10～20μm。
4.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的横向RC-IGBT器件的氧化物沟槽的侧墙和底部的厚度为1～5μm。
5.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的离子注入的N型阴极区和P型阳极区的掺杂浓度为1×1018cm-3以上。
6.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的N-漂移区2的材料为硅。
7.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的氧化物主要成分为SiO2。
8.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的SOI层主要成分为SiO2。
9.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的RC-LIGBT器件的元胞宽度为17μm，有源区深度为25μm。
10.根据权利要求1所述的一种消除负阻效应的横向RC-IGBT器件结构，其特征在于：所述的RC-LIGBT器件的氧化物沟槽深度为20μm。
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