CN114362612A - PWM power amplification circuit based on P-channel and N-channel MOSFET - Google Patents
PWM power amplification circuit based on P-channel and N-channel MOSFET Download PDFInfo
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- CN114362612A CN114362612A CN202111440073.9A CN202111440073A CN114362612A CN 114362612 A CN114362612 A CN 114362612A CN 202111440073 A CN202111440073 A CN 202111440073A CN 114362612 A CN114362612 A CN 114362612A
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- 230000003321 amplification Effects 0.000 title abstract description 10
- 238000003199 nucleic acid amplification method Methods 0.000 title abstract description 10
- 238000002955 isolation Methods 0.000 claims description 16
- 238000011084 recovery Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000005086 pumping Methods 0.000 abstract description 5
- 230000003111 delayed effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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Abstract
The invention provides a PWM power amplification circuit based on P-channel and N-channel MOSFET tubes, a pumping circuit is not needed for conducting an upper bridge arm of a bridge circuit, and the output of the circuit can be constantly kept at a high level. The circuit has simple structure and low requirement on the grid drive module, and does not need a pumping circuit to conduct the upper bridge arm of the bridge circuit; the circuit output can be kept high.
Description
Technical Field
The invention relates to the technical field of PWM power amplification, in particular to a PWM power amplification circuit based on P-channel and N-channel MOSFET tubes.
Background
The prior art basically applies a double N-channel MOSFET tube group to form a power amplifying circuit, and has the following defects: the circuit design is complex, a special driving chip is applied for multiple purposes, and the driving chip needs to be provided with a pumping circuit to drive an upper bridge arm of a double-N-channel MOSFET tube bridge type circuit; the output of the power amplifier cannot be maintained at a constant high level, that is, when the duty ratio of the PWM control signal is 100%, the output of the power amplifier circuit cannot be maintained.
Disclosure of Invention
In view of this, the present invention provides a PWM power amplifier circuit based on P-channel and N-channel MOSFET transistors, which does not require a pumping circuit to conduct the upper arm of the bridge circuit, and the output of the circuit can be constantly maintained at a high level.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the PWM power amplification circuit based on the P-channel MOSFET and the N-channel MOSFET comprises a MOSFET grid drive module, a resistor R1, a resistor R2, a fast recovery diode V1, a fast recovery diode V2, a P-channel enhanced MOSFET, an N-channel enhanced MOSFET, a voltage regulator V3 and a voltage regulator V4; the power supply end of the grid driving module is respectively connected with the positive electrode Va and the negative electrode VTa of a power supply, the input end of the grid driving module is connected with a PWM signal of the MCU, and the output end of the grid driving module is connected with the positive electrode of V1, the negative electrode of V2, one end of R1 and one end of R2; v1 is connected with R1 in parallel, and the negative pole of V1 is connected with the positive pole of V3 and the G pole of P-MOS; the negative electrode of the V3 is connected with the S pole of the P-MOS and connected with Va in parallel; v2 is connected with R2 in parallel, and the positive pole of V2 is connected with the positive pole of V4 and the G pole of N-MOS; the negative electrode of the V4 is connected with the D pole of the N-MOS and connected with VTa in parallel; the D pole of the P-MOS is connected with the S pole of the N-MOS to be used as the output of the bridge circuit.
The grid driving module is a mature grid driving circuit or an integrated circuit.
The driving circuit of the brushless direct-current torque motor is formed by the MCU and the isolation module; the drive circuit is used for driving a U phase in the motor.
The MCU is a singlechip, a DSP or an FPGA.
The isolation module is optically isolated or digitally isolated.
The isolation module and the grid drive module adopt isolation type grid drivers and are integrated with the digital isolation module and the grid drive module.
The device is used for brushless motor driving, landing gear retraction and release and photoelectric pod.
Has the advantages that:
the circuit has simple structure and low requirement on the grid drive module, and does not need a pumping circuit to conduct the upper bridge arm of the bridge circuit; the circuit output can be kept high.
Drawings
Fig. 1 is a schematic diagram of a power amplification circuit based on P-channel enhancement type MOSFET and N-channel enhancement type MOSFET according to the present invention.
Fig. 2 is a schematic diagram of a power amplifying circuit of a PWM signal according to the present invention applied to drive a brushless dc torque motor.
Fig. 3 is a schematic diagram of a U-phase power amplifying circuit of a brushless motor when the present invention is applied to drive a brushless dc torque motor.
Detailed Description
The invention is described in detail below by way of example with reference to the accompanying drawings.
The invention solves the problem of realizing the power amplification of the PWM signal, provides a bridge circuit based on a P-channel enhanced MOSFET and an N-channel enhanced MOSFET based on the conduction characteristics of the P-channel enhanced MOSFET and the N-channel enhanced MOSFET, and achieves the purpose of the power amplification of the PWM signal. The circuit structure is as shown in fig. 1, in the figure, D1 is a MOSFET gate driving module, which can be a mature circuit combination or an integrated circuit, and is powered by positive and negative electrodes of voltage Va and VTa, and the input is a PWM signal and the output is a gate driving signal with high and low levels Va and VTa, respectively; r1 and R2 are resistors with proper resistance values; v1 and V2 are fast recovery diodes; the P-MOS is a P-channel enhancement type MOSFET, the N-MOS is an N-channel enhancement type MOSFET, the V3 and the V4 are voltage-stabilizing tubes, voltage-stabilizing values are not more than grid voltage-resisting values of the P-MOS and the N-MOS respectively and are set as Vp and Vn.
Specifically, the power supply terminals of the gate driving module D1 are respectively connected to the positive and negative power supply terminals Va and VTa, the input terminal of the D1 is connected to the PWM signal of the MCU, and the output terminal (position marked as a here) of the D1 is connected to the positive terminal of the V1, the negative terminal of the V2, one end of the R1, and one end of the R2. V1 is connected with R1 in parallel, and the negative pole (position marked as B) of V1 is connected with the positive pole of V3 and the G pole of P-MOS; the cathode of V3 is connected to the S pole of P-MOS and connected to Va. V2 is connected with R2 in parallel, and the positive pole (marked as C in the position) of V2 is connected with the positive pole of V4 and the G pole of N-MOS; the cathode of V4 is connected to the D pole of N-MOS and connected to VTa. The D pole of the P-MOS is connected with the S pole of the N-MOS to be used as the output Vout of the bridge circuit.
The working principle of the circuit is as follows:
(1) when the grid driving module outputs a high level, namely the voltage at the point A is equal to the voltage at the point A, the voltage at the point B is the same as the voltage at the point A and is Va, and at the moment, due to the on-state characteristic of the P-channel enhancement type MOSFET, the P-MOS is cut off. Due to the existence of the voltage regulator tube V4, the voltage of a point C is Vn, and at the moment, due to the conduction characteristic of the N-channel enhancement type MOSFET tube, the N-MOS is conducted. The circuit output Vout ═ VTa;
(2) when the grid driving module outputs a low level, namely when the voltage at the point A is equal to the voltage at the point A, the voltage at the point C is the same as the voltage at the point A and is VTa, and at the moment, the N-MOS is cut off due to the on-state characteristic of the N-channel enhancement type MOSFET. Due to the existence of the voltage regulator tube V3, the voltage at the point B is Vp, and at the moment, the P-MOS is conducted due to the conduction characteristic of the P-channel enhancement type MOSFET. The circuit output Vout is Va.
(3) When the point A changes from Va to VTa, V1 is cut off, and the P-MOS is delayed to be turned on due to the existence of R1. V2 is turned on, R2 is not current enough, and N-MOS will be immediately turned off. Namely, the N-MOS is immediately cut off, and the P-MOS is delayed to be conducted, so that the P-MOS and the N-MOS are prevented from being conducted simultaneously;
(4) when the point A is changed from VTa to Va, V2 is cut off, and N-MOS is turned on in a delayed mode due to the existence of R2. V1 is turned on, R1 does not pass current, and P-MOS will be immediately turned off. Namely, the P-MOS is immediately cut off, and the N-MOS is delayed to be conducted, so that the P-MOS and the N-MOS are prevented from being conducted simultaneously.
For driving a dc motor, a power amplification circuit of a PWM signal is commonly used. An example of an application is shown in fig. 2 for driving a brushless dc torque motor. The motor is known to have a rated voltage of 28V and a peak locked-rotor current of 6A.
The MCU in the embodiment can be a singlechip, a DSP or an FPGA and the like. The isolation module can adopt optical isolation or digital isolation, and the gate drive module can adopt a mature gate drive circuit or an integrated circuit.
This example configures a circuit for driving the U phase in the motor as shown in fig. 3. The isolation module and the gate driving module adopt ADUM4120 isolated gate drivers of AD company, integrate the digital isolation module and the gate driving module, support low-level signal input of 2.5V-6.5V and high-level gate driving output of 4.5V to 35V, and have peak current of 2.3A.
A P-channel MOSFET is selected as an IRFH9310Pdf chip of the England flying company, the drain voltage VDS is-30V, the maximum output current ID is-21A, and the gate voltage VGS is +/-20V.
An N-channel MOSFET is selected as an IRF40H210 chip of the England flying company, the leakage-to-mark voltage VDSS is 40V, the maximum output current ID is 201A, and the grid voltage is +/-20V.
The voltage-stabilizing tubes V3 and V4 adopt 1SMB5927B of DIODES company, the voltage-stabilizing value is 12V, and the fast recovery DIODES V1 and V2 adopt 1N4148 of the DIODES company.
The resistors R1 and R2 are power resistors with the resistance value of 300 ohms and the power of 1W. When the output of the U1 is 28V, the voltage stabilizing value of the voltage stabilizing tube V3 is 12V, the voltage difference between two ends of the R1 is 16V, the current passing through the R1 is about 0.053A, and the power of the R1 is 0.848W, so that a power type resistor of 1W is selected.
In the circuit process, when the PWM1 is at a high level, the output of the D1 is at a high level of 28V, the voltage difference between the grid and the source of the P1 is 0V, and the P1 tube is cut off; due to the voltage stabilization effect of V4, the voltage difference between the source and the gate of N1 is 12V, and the N1 tube is turned on. The output of U1 is 28 VGND.
When the PWM1 is at low level, the D1 outputs low level 28VGND, the voltage difference between the gate and the source of the P1 is 12V due to the presence of the V3 voltage regulator, and the P1 transistor is turned on; the voltage difference between the gate and the source of the N1 is 0V, and the N1 tube is cut off. The output of U1 is 28V.
Since the P1 passable current is 21A and the N1 passable current is 201A, the index that the motor locked-rotor peak current is 6A is satisfied.
The invention can be applied to brushless motor drive, landing gear retraction, photoelectric pod and the like, and has innovative content and mature technology.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A PWM power amplifying circuit based on P-channel and N-channel MOSFET tubes is characterized by comprising a MOSFET tube gate drive module, a resistor R1, a resistor R2, a fast recovery diode V1, a fast recovery diode V2, a P-channel enhancement type MOSFET tube, an N-channel enhancement type MOSFET tube, a voltage regulator tube V3 and a voltage regulator tube V4; the power supply end of the grid driving module is respectively connected with the positive electrode Va and the negative electrode VTa of a power supply, the input end of the grid driving module is connected with a PWM signal of the MCU, and the output end of the grid driving module is connected with the positive electrode of V1, the negative electrode of V2, one end of R1 and one end of R2; v1 is connected with R1 in parallel, and the negative pole of V1 is connected with the positive pole of V3 and the G pole of P-MOS; the negative electrode of the V3 is connected with the S pole of the P-MOS and connected with Va in parallel; v2 is connected with R2 in parallel, and the positive pole of V2 is connected with the positive pole of V4 and the G pole of N-MOS; the negative electrode of the V4 is connected with the D pole of the N-MOS and connected with VTa in parallel; the D pole of the P-MOS is connected with the S pole of the N-MOS to be used as the output of the bridge circuit.
2. The circuit of claim 1, wherein the gate driver module is a mature gate driver circuit or an integrated circuit.
3. The circuit according to claim 1 or 2, wherein a drive circuit of the brushless direct current torque motor is formed with the MCU and the isolation module; the drive circuit is used for driving a U phase in the motor.
4. The circuit of claim 3, wherein the MCU is selected from a single chip, a DSP or an FPGA.
5. The circuit of claim 3, wherein the isolation module is selected from optical isolation or digital isolation.
6. The circuit of claim 3, wherein the isolation module and the gate driver module are isolated gate drivers, and the digital isolation module and the gate driver module are integrated.
7. The circuit of claim 1 for brushless motor drive, landing gear retraction, and electro-optic pods.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111440073.9A CN114362612A (en) | 2021-11-30 | 2021-11-30 | PWM power amplification circuit based on P-channel and N-channel MOSFET |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111440073.9A CN114362612A (en) | 2021-11-30 | 2021-11-30 | PWM power amplification circuit based on P-channel and N-channel MOSFET |
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| CN114362612A true CN114362612A (en) | 2022-04-15 |
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| CN202111440073.9A Pending CN114362612A (en) | 2021-11-30 | 2021-11-30 | PWM power amplification circuit based on P-channel and N-channel MOSFET |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0374189A (en) * | 1989-08-14 | 1991-03-28 | Nec Corp | Driver for motor control ic |
| CN101789680A (en) * | 2010-03-12 | 2010-07-28 | 西安科技大学 | Drive circuit capable of quickly switching off depletion type switching element |
| CN104009617A (en) * | 2014-05-17 | 2014-08-27 | 苏州蓝萃电子科技有限公司 | Simple low-voltage grid driving circuit |
| CN203851011U (en) * | 2014-05-17 | 2014-09-24 | 苏州蓝萃电子科技有限公司 | Simple low-voltage gate driving circuit |
| CN106160447A (en) * | 2016-07-08 | 2016-11-23 | 南京航空航天大学 | A kind of Dead Time optimal control method being applicable to SiC base brachium pontis power circuit |
-
2021
- 2021-11-30 CN CN202111440073.9A patent/CN114362612A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0374189A (en) * | 1989-08-14 | 1991-03-28 | Nec Corp | Driver for motor control ic |
| CN101789680A (en) * | 2010-03-12 | 2010-07-28 | 西安科技大学 | Drive circuit capable of quickly switching off depletion type switching element |
| CN104009617A (en) * | 2014-05-17 | 2014-08-27 | 苏州蓝萃电子科技有限公司 | Simple low-voltage grid driving circuit |
| CN203851011U (en) * | 2014-05-17 | 2014-09-24 | 苏州蓝萃电子科技有限公司 | Simple low-voltage gate driving circuit |
| CN106160447A (en) * | 2016-07-08 | 2016-11-23 | 南京航空航天大学 | A kind of Dead Time optimal control method being applicable to SiC base brachium pontis power circuit |
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