CN114361307A - Light-emitting element - Google Patents
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- CN114361307A CN114361307A CN202111662018.4A CN202111662018A CN114361307A CN 114361307 A CN114361307 A CN 114361307A CN 202111662018 A CN202111662018 A CN 202111662018A CN 114361307 A CN114361307 A CN 114361307A
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- 238000005253 cladding Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000005641 tunneling Effects 0.000 claims abstract description 9
- 230000000052 comparative effect Effects 0.000 description 27
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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Abstract
The invention provides a light-emitting element, which comprises the following components formed from bottom to top in sequence: a substrate, a lower cladding layer, an active layer, an upper cladding layer, a window layer, and a tunneling junction layer. The tunneling junction layer comprises a heavily doped p-type layer and a heavily doped n-type layer, the heavily doped n-type layer is adjacently arranged above the heavily doped p-type layer, the heavily doped p-type layer is arranged above the window layer, and the heavily doped n-type layer is used as an ohmic contact layer to be in contact with an external power supply, so that ohmic contact is facilitated. The doping concentration of the ohmic contact layer is higher than that of the traditional LED, so that the ohmic contact layer has lower resistance than that of the traditional LED, the current is favorably diffused transversely, the total luminous energy is higher than that of the traditional LED, and the temperature of the active layer is lower than that of the traditional LED.
Description
Technical Field
The invention relates to the technical field of optical semiconductors, in particular to a light-emitting element.
Background
An optical semiconductor device such as a Light emitting device includes a Light Emitting Diode (LED) and a Laser Diode (LD), and the Light emitting device utilizes an epitaxial technique to form a p-n junction or a p-i-n junction on a semiconductor substrate to achieve the purpose of emitting Light. Referring to fig. 1, a light emitting device (e.g., LED) in the prior art is formed by epitaxy, and the structure thereof sequentially includes: a substrate (substrate) 1, a Distributed Bragg Reflector (DBR) layer 2, a lower cladding layer (lower cladding layer)3, a lower confining layer (confining layer)4, an active layer (active layer)5, an upper confining layer 6, an upper cladding layer (upper cladding layer)7, and a window layer (window layer) 8. Two Contact layers (contacts) such as a lower electrode (electrode) C1 and an upper electrode C2, a lower electrode C1 under the substrate 1, and an upper electrode C2 above the window layer 8, wherein the lower electrode C1 and the upper electrode C2 form ohmic contacts (ohmic contacts) with the substrate 1 and the window layer 8, respectively, to supply power to the active layer 5 and inject carriers. The bottom electrode C1, the substrate 1, the DBR layer 2 and the bottom cladding layer 3 are of a first conductivity type, e.g., n-type, the top electrode C2, the window layer 8 and the top cladding layer 7 are of a second conductivity type, e.g., p-type, and the bottom cladding layer 6, the active layer 5 and the top cladding layer 4 are undoped. For example, an epitaxial chip structure of an LED of aluminum gallium indium phosphide (AlGaInP) is formed by sequentially growing an n-type DBR layer 2, an n-type lower cladding layer 3, a lower confinement layer 4, an active layer 5 and an upper confinement layer 6, which are formed of undoped AlGaInP, on an n-type substrate 1 formed of gallium arsenide (GaAs), followed by a p-type upper cladding layer 7, a p-type window layer 8 formed of gallium phosphide (GaP), and followed by a p-type upper electrode C2 formed of GaP.
In general, the window layer 8 serves as a Current Spreading layer, which makes use of the high conductivity (low resistance) of the window layer 8 to laterally spread the Current to improve the light emitting efficiency of the LED. The upper electrode C2 above the window layer 8 is typically circular for wiring, and is etched to have a smaller area than the window layer 8, so that most of the current is confined under the circular area of the upper electrode C2, and then diffused laterally through the window layer 8. However, such a structure design is only suitable for low current (e.g., less than 8mA) operating conditions, since the lower current allows sufficient time for carriers to diffuse laterally in the window layer 8.
When the total power (total power) of the LED is increased, the current is usually input from the upper electrode C2 in a manner of increasing the current (e.g. greater than or equal to 8mA), and the high current cannot laterally diffuse in the window layer 8 for a sufficient time as the low current, i.e. the carriers are more confined under the circular area under the high current operation condition, so the carrier density under the circular area is larger, and the high current cannot laterally diffuse in time even if the thickness of the window layer 8 is increased. The above-mentioned high current cannot diffuse laterally in time, which causes only a part of the quantum well structure of the active layer 15 to be applied, and the higher carrier density under the circular area also causes the temperature of the active layer 5 to be higher during the operation of the LED, for example, up to 485 ℃ (10 mA for high current), however, the higher temperature of the active layer can not effectively increase the total light emitting energy of the LED with the increase of the current.
Furthermore, the top electrode C2 must be formed by etching as described above, which requires epitaxy and etching processes during the LED manufacturing process, and thus the manufacturing process is complicated, the risk is increased, and the yield is challenging.
Disclosure of Invention
The present invention is directed to a light emitting device to solve the above problems.
To achieve the above object, according to one aspect of the present disclosure, there is provided a light emitting element including: a substrate; a lower cladding layer disposed above the substrate; a lower confinement layer disposed above the lower cladding layer; an active layer disposed above the lower confining layer; an upper confining layer disposed above the active layer; an upper cladding layer disposed above the upper confinement layer; the window layer is arranged above the upper covering layer; a tunneling junction layer disposed above the window layer.
In one possible implementation, the tunnel junction layer includes a heavily doped p-type layer and a heavily doped n-type layer, wherein the heavily doped n-type layer is disposed adjacent to and above the heavily doped p-type layer.
In one possible implementation, the heavily doped p-type layer is disposed over the window layer.
In one possible implementation, the area of the upper surface and the area of the lower surface of the tunneling interface layer are respectively equal to the area of the upper surface of the window layer.
In one possible implementation, a contact fill layer is disposed above the tunnel interface layer.
One or more technical solutions in the embodiments of the present application have at least one or more of the following technical effects: in the light emitting device provided by the embodiment of the invention, the temperature of the active layer is lower and the total light emitting energy can be increased during high current operation, and an etching process is not required.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Fig. 1 is a structural view of a conventional LED.
Fig. 2 is a structural view of a light emitting element of the present invention.
FIG. 3 is a graph showing the relationship between total energy of light emission and operating current in example 1 and comparative example 1.
Fig. 4 is a structural view of a light emitting element provided with a contact supplement layer according to the present invention.
Description of reference numerals: 100. a light emitting element; 10. a lower electrode; 11. a substrate; 12. a DBR layer; 13. a lower cladding layer; 14. a lower confining layer; 15. an active layer; 16. an upper confining layer; 17. coating a layer; 18. a window layer; 18A, the upper surface of the window layer; 19. a contact supplement layer; l, a light field; TJ, tunnel junction layer; TJ1, heavily doped p-type layer; TJ2, heavily doped n-type layer; TJA, top surface; TJB, lower surface.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
Referring to fig. 2, an embodiment of the present disclosure provides a Light-emitting element (Light-emitting element) 100, where the Light-emitting element 100 may be a Light-emitting Diode (LED) or a Laser Diode (LD). In order to facilitate understanding of the spirit of the present invention, the following embodiments exemplify the structure of the LED, however, it should be understood by those skilled in the art that the spirit and structure of the present invention are also applicable to the LD. In a first embodiment, the light emitting device 100 at least comprises: a lower electrode 10; a substrate 11, wherein the substrate 11 is in contact with the bottom electrode 10, and the substrate 11 can be disposed above or below the bottom electrode 10; a Distributed Bragg Reflector (DBR) layer 12, the DBR layer 12 being disposed above the substrate 11, the DBR layer 12 being contactable with an upper surface of the substrate 11; a lower cladding layer 13, the lower cladding layer 13 being disposed above the DBR layer 12, the lower cladding layer 13 being in contact with an upper surface of the DBR layer 12; a lower confinement layer 14, the lower confinement layer 14 being disposed above the lower cladding layer 13, the lower confinement layer 14 being capable of contacting an upper surface of the lower cladding layer 13; an active layer 15, the active layer 15 being disposed above the lower confinement layer 14, the active layer 15 being in contact with the upper surface of the lower confinement layer 14; an upper confining layer 16, the upper confining layer 16 being disposed above the active layer 15, the upper confining layer 16 being in contact with an upper surface of the active layer 15; an upper cladding layer 17, the upper cladding layer 17 is disposed above the upper confinement layer 16, and the upper cladding layer 17 can contact with the upper surface of the upper confinement layer 16; a window layer 18, the window layer 18 is disposed above the upper cladding layer 17, the window layer 18 can contact with the upper surface of the upper cladding layer 17; a Tunnel Junction (TJ) layer disposed above the window layer 18, the tunnel junction layer TJ being in contact with an upper surface of the window layer 18. The bottom electrode 10 and the tunnel junction layer TJ are ohmic contact layers (ohmic contacts) respectively for providing electric energy to the active layer 15 and injecting carriers. In other words, the structure of the light emitting device 100 is sequentially formed by using an epitaxial technique from bottom to top: the substrate 11, the DBR layer 12, the lower cladding layer 13, the lower cladding layer 14, the active layer 15, the upper cladding layer 16, the upper cladding layer 17, the window layer 18 and the tunnel junction layer TJ are formed in situ (in-situ) in the reaction chamber by using a related technique, such as Molecular Beam Epitaxy (MBE), Metal Organic Vapor phase Epitaxy (MOPVE), low pressure Vapor phase Epitaxy (LPMOVPE) or Metal Organic Chemical Vapor Deposition (MOCVD). Of course, the DBR layer 12 may not be provided, and the lower cladding layer 13 may be provided above the substrate 11, and the lower cladding layer 13 may contact the upper surface of the substrate 11.
The bottom electrode 10 is a first conductive type electrode, such as an n-type electrode, such as n-type gallium arsenide (GaAs). The substrate 11 is a first conductive type substrate, such as n-type GaAs. The DBR layer 12 is a first conductive DBR layer, such as an n-type DBR layer, and the DBR layer 12 can be aluminum gallium arsenide (AlGaAs). The lower cladding layer 13 is a first conductive type cladding layer, such as an n-type cladding layer, and the lower cladding layer 13 may be aluminum indium phosphide (AlInP). The material of the lower confining layer 14 may be (Al)xGa1-x)0.5In0.5P, wherein 0<x<1, for example, 0.65. The active layer 15 may be a light emitting layer having a multiple quantum well structure formed by repeatedly stacking a plurality of stack pairs (not shown), each stack pair including a well layer and a barrier layer. The material of the active layer 15 may be (Al)yGa1-y)0.5In0.5P, wherein 0<y<1, for example, 0.65. The material of the upper confining layer 16 may be (Al)zGa1-z)0.5In0.5P, wherein 0<z<1, for example, 0.65. The lower confinement layer 14, the active layer 15 and the upper confinement layer 16 are undoped. The upper cladding layer 17 is a second conductive type cladding layer, such as a p-type cladding layer, and the upper cladding layer 17 may be aluminum indium phosphide (AlInP).
The window layer 18 is a second conductive window layer, such as a p-type window layer, the window layer 18 has a wider or indirect (indiect) energy GaP (energygap) and a higher conductivity, and the window layer 18 may be GaP, GaAsP (gallium arsenide phosphide) or AlGaAs. The window layer 18 may be magnesium (Mg) doped GaP.
The tunnel junction layer TJ may be a multi-layer structure including a heavily doped second type layer and a heavily doped first type layer, such as a heavily doped p-type layer TJ1 and a heavily doped n-type layer TJ2, respectively, the heavily doped n-type layer TJ2 being disposed adjacent to and above the heavily doped p-type layer TJ1, in other words, the heavily doped first type layer being disposed adjacent to and above the heavily doped second type layer. The heavily doped p-type layer TJ1 of the tunnel interface layer TJ is disposed above the window layer 18, e.g., the heavily doped p-type layer TJ1 of the tunnel interface layer TJ is adjacent to the window layer 18. The material of the tunnel junction layer TJ may be matched (match) with the substrate 11, for example, the substrate 11 may be GaAs, and the tunnel junction layer TJ may be GaAs, AlGaAs, InGaP (indium gallium phosphide), AlInP (aluminum indium phosphide), AlGaInP, or GaP.
Specifically, in the above statement that the tunnel junction layer TJ is an ohmic contact layer, the heavily doped n-type layer TJ2 of the tunnel junction layer TJ is an ohmic contact layer, and in fig. 2, the area of the upper surface TJA and the area of the lower surface TJB of the tunnel junction layer TJ are equal to the area of the window layer upper surface 18A of the window layer 18, respectively. Comparing fig. 2 representing embodiment 1 with fig. 1 representing comparative example 1, as described above, since the heavily doped n-type layer TJ2 is an ohmic contact layer, the heavily doped n-type layer TJ2 in embodiment 1 of the light emitting device 100 of the present invention corresponds to an upper electrode (ohmic contact layer) in comparative conventional LED 1, that is, the circular upper electrode in comparative LED 1 is not provided in embodiment 1 of the present invention. Since the area of the upper surface TJA and the area of the lower surface TJB of the tunneling junction layer TJ are respectively equal to the area of the window layer upper surface 18A of the window layer 18, the heavily doped n-type layer TJ2 does not need to be etched to reduce the upper electrode area to be smaller than the window layer as in comparative example 1 (fig. 1), and thus the light emitting device 100 of the present invention has the advantages of simple process, reduced risk, and improved yield compared to the conventional LED.
The following table shows a structural comparison table of comparative example 1 of the conventional LED.
Watch I (comparative example 1)
*: the area of the upper electrode is smaller than that of the window layer.
Table two below shows a structure comparison table of example 1 of the light emitting element 100 of the present invention.
Watch two (example 1)
*: the area of the upper surface TJA and the area of the lower surface TJB of the tunnel junction layer TJ are respectively equal to the area of the window layer upper surface 18A of the window layer 18.
Table III below shows the total energy of light emission under high current (greater than or equal to 8mA) operating conditions of example 1 and comparative example 1, which are light-emitting elements 100 of the present invention. Please also refer to fig. 3.
Watch III
The following table four lists the temperatures of the active layer 15 of example 1 and the active layer of comparative example 1 of the light emitting device 100 of the present invention under the operating condition of operating current of 10 mA.
Watch four
| Operating current 10mA | |
| Active layer (E) of comparative example 1 | 485℃ |
| Active layer 15(F) of example 1 | 390℃ |
| (F)-(E) | -95℃ |
As can be seen from the above tables i to iv, the following advantages are generated in the embodiment 1 of the light emitting device 100 of the present invention compared with the conventional LED comparative example 1: (1) the ohmic contact layer of example 1 (heavily doped n-type layer TJ2) is more favorable for ohmic contact than the ohmic contact layer of comparative example 1 (p-type upper electrode) because the resistance of n-type is much smaller than that of p-type, while the ohmic contact layer of comparative example 1 (heavily doped n-type layer TJ2) is n-type (heavily doped n-type layer TJ2) is p-type. (2) From table three, example 1 is 1.0382 times as much as comparative example 1 in terms of total energy of light emission at an operating current of 8mA, and example 1 is 1.0769 times as much as comparative example 1 in terms of total energy of light emission at an operating current of 10mA, because the ohmic contact layer (heavily doped n-type layer TJ2) of example 1 is heavily doped (doping concentration is as high as more than 5.0x 10)19atoms/cm3) While the ohmic contact layer (p-type upper electrode) of comparative example 1 had a doping concentration of only 1.0x1019atoms/cm3Therefore, the ohmic contact layer of example 1 has a lower resistance than that of comparative example 1, so that the ohmic contact layer of example 1 facilitates lateral diffusion of current, which is rapidly diffused laterally first when a high current is introduced; moreover, the heavily doped n-type layer TJ2 of embodiment 1 has the same area as the window layer 18, so that the lateral current spreading in the ohmic contact layer is higher than the limited circular area of comparative example 1, and thus the quantum well structure of the active layer 15 of embodiment 1 can have more parts to be applied, and the carrier recombination region is larger, so the total emission energy of embodiment 1 is larger than that of comparative example 1, for example, the total emission energy 5.484 of embodiment 1 under the condition of 8mA of operating currentThe mW is larger than the total luminous energy of the comparative example 1 by 5.282 mW. (3) When a high current is introduced, the lateral current coverage area of the embodiment 1 is necessarily larger than the limited circular area of the comparative example 1, so the carrier density under the ohmic contact layer (heavily doped n-type layer TJ2) of the embodiment 1 is necessarily smaller than the carrier density under the ohmic contact layer (p-type top electrode) of the comparative example 1, so the temperature of the active layer 15 of the embodiment 1 is only 390 ℃, which is much lower than the temperature of the active layer of the comparative example 1 by 485 ℃ and up to 95 ℃ (table four), and the lower temperature of the active layer 15 makes the total light emitting energy of the embodiment 1 effectively increase with the increase of the current; for example, in table three, when the operating current is increased from 8mA to 10mA, the total light emission energy of comparative example 1 is increased by only 1.04 times, whereas example 1 can be increased by 1.08 times. (3) It was surprisingly found that, since the mobility of carriers in the n-type semiconductor is greater than that of carriers in the p-type semiconductor, electrons/holes are coupled to emit light in the upper half of the active layer in comparative example 1, so that most of the optical field is biased to the upper half of the active layer, and the lower half of the active layer cannot be effectively used; however, in the embodiment 1, the tunnel junction layer TJ is doped by a dopant, and therefore, compared to the comparative example 1, the carrier mobility from top to bottom in the tunnel junction layer TJ, the window layer 18 and the upper cladding layer 17 of the embodiment 1 is greater than the carrier mobility from top to bottom in the upper electrode and the window layer of the comparative example 1, which makes the coupling between the optical field L in the embodiment 1 and the quantum well of the active layer 15 more tend to be at the middle position of the active layer 15, so that the upper half and the lower half of the active layer 15 can be effectively utilized and compensate the optical field offset in the vertical direction, thereby increasing the modal gain and reducing the critical current value, and the light emitting device 100 can be operated at a high temperature and has a high operation rate.
It is also possible to dispose a contact fill layer 19 above the tunnel junction layer TJ, as shown in fig. 4. The contact supplement layer 19 is made of Si/Te doped n-type GaP with a doping concentration of 5.0x1018atoms/cm3。
The light emitting element of the invention is provided with a tunneling junction layer above a window layer, a heavily doped n-type layer (ohmic contact layer) of the tunneling junction layer is contacted with an external power supply corresponding to a p-type upper electrode (ohmic contact layer) in the traditional LED, and the area of the upper surface and the area of the lower surface of the tunneling junction layer are respectively equal to the area of the upper surface of the window layer. Since the resistance of the n-type is much smaller than that of the p-type, the ohmic contact layer of the light emitting element of the present invention is more favorable for ohmic contact. The doping concentration of the ohmic contact layer of the light-emitting element is higher than that of the traditional LED, so that the resistance of the ohmic contact layer is lower than that of the ohmic contact layer of the traditional LED, the ohmic contact layer is favorable for transverse diffusion of current, the total light-emitting energy is higher than that of the traditional LED, and the temperature of the active layer is lower than that of the traditional LED.
The invention is not described in detail, but is well known to those skilled in the art.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (5)
1. A light-emitting element characterized by comprising:
a substrate (11);
a lower cladding layer (13), the lower cladding layer (13) being disposed above the substrate (11);
a lower confining layer (14), said lower confining layer (14) being arranged above said lower cladding layer (13);
an active layer (15), the active layer (15) being disposed above the lower confining layer (14);
an upper confining layer (16), the upper confining layer (16) being disposed above the active layer (15);
an upper cladding layer (17), the upper cladding layer (17) being disposed above the upper confining layer (16);
a window layer (18), said window layer (18) being disposed above said upper cladding layer (17);
a tunnel junction layer (TJ) disposed above the window layer (18).
2. A light-emitting element according to claim 1, wherein said tunneling junction layer (TJ) comprises a heavily doped p-type layer (TJ1) and a heavily doped n-type layer (TJ2), wherein said heavily doped n-type layer (TJ2) is disposed adjacent to and above said heavily doped p-type layer (TJ 1).
3. A light-emitting element according to claim 2, characterized in that said heavily doped p-type layer (TJ1) is disposed above said window layer (18).
4. A light-emitting element according to claim 3, wherein the area of the upper surface (TJA) and the area of the lower surface (TJB) of the tunnel junction layer (TJ) are respectively equal to the area of the window layer upper surface (18A) of the window layer (18).
5. A light-emitting element according to claim 4, characterized in that a contact supplementary layer (19) is provided above the tunnel junction layer (TJ).
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2021
- 2021-12-30 CN CN202111662018.4A patent/CN114361307A/en active Pending
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| WO2004070851A1 (en) * | 2003-02-10 | 2004-08-19 | Showa Denko K.K. | Light-emitting diode device and production method thereof |
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