KR20100066807A - Nitride semiconductor light emitting device - Google Patents

Abstract

PURPOSE: A nitride semiconductor light emitting diode is provided to enhance recombination efficiency by simultaneously blocking an electric overflow from a quantum-well layer and an electric overflow to a P-type nitride semiconductor layer. CONSTITUTION: An N-type nitride semiconductor layer(130) and a P-type nitride semiconductor layer(160) are formed on a substrate. A quantum barrier layer(140a) is positioned between the N-type and P-type nitride semiconductor layers. An active layer(140) of multiple quantum well structures is formed by successively laminating the quantum well layers. The P-type nitride semiconductor layer is positioned near the active layer. An electronic blocking film(150) has a higher energy band gap than the quantum barrier layer and the P-type nitride semiconductor layer.

Description

Nitride Semiconductor Light Emitting Device {NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present invention relates to a nitride semiconductor device, and more particularly, to a nitride semiconductor light emitting device capable of blocking electron overflow from a quantum well layer and electron overflow to a p-type nitride semiconductor layer.

BACKGROUND A semiconductor light emitting device (LED) is a semiconductor device capable of generating light of various colors based on recombination of electrons and holes in a junction portion of a p and n type semiconductor layer, that is, an active layer when a current is applied. Such an active layer has a single quantum well (SQW) structure having one quantum well layer and a muti quantum well (MQW) structure having a plurality of quantum well layers smaller than about 100 ms. In particular, the active layer of the multi-quantum well structure is actively used because of its superior light efficiency and high luminous output compared to a single quantum well structure.

Such semiconductor light emitting devices have a number of advantages such as long life, low power, excellent initial driving characteristics, high vibration transition, and high tolerance for repetitive power interruption. In particular, in recent years, group III nitride semiconductors capable of emitting light in a blue short wavelength region have been in the spotlight.

In general, in the nitride semiconductor light emitting device, a sapphire substrate, an n-type nitride semiconductor layer, an active layer having a multi-quantum well structure, and a p-type nitride semiconductor layer are sequentially stacked. At this time, the n-side electrode is formed on the upper surface of the n-type nitride semiconductor layer exposed by mesa etching, and the p-side electrode is formed on the upper surface of the p-type nitride semiconductor layer. Here, the active layer made of a multi-quantum well structure generally has a structure in which an undoped GaN barrier layer and an undoped InGaN quantum well layer are alternately stacked.

The light efficiency of the nitride semiconductor light emitting device is basically determined by the probability of recombination of electrons and holes in the active layer, that is, internal quantum efficiency. In order to improve the internal quantum efficiency, research has been conducted mainly to improve the structure of the active layer itself or to increase the effective mass of the carrier.

However, due to the polarization characteristic of the nitride semiconductor light emitting device, the quantum confinement force of the electrons in the active layer decreases and the quantum confinement of the electrons and holes (the electron mobility is higher than the hole mobility) is not quantum constrained in the active layer. The electrons overflow into the p-type nitride semiconductor layer, or non-luminescent coupling occurs at the interface with the final quantum barrier layer or the p-type nitride semiconductor layer, resulting in light loss, thereby reducing the efficiency of the light emitting device.

In other words, when the mobility of electrons and holes is imbalanced, some carriers (electrons or holes) do not recombine in the active layer, but move to the p-type or n-type nitride semiconductor layer, which is a cladding layer, to decrease the recombination efficiency inside the active layer. There is a problem.

Therefore, in order to increase the effective amount of carriers in the active layer, it is necessary to reduce the number of carriers recombined outside the active layer, so it is necessary to optimize the capture rate of electrons and holes.

SUMMARY OF THE INVENTION The present invention has been made to solve the aforementioned problems of the prior art, and an object of the present invention is to control the energy bandgap or p-type impurity concentration of the final quantum barrier layer in the superlattice active layer, thereby providing electrons to the p-type nitride semiconductor layer. It is to provide a nitride semiconductor light emitting device that can prevent the recombination of the outside of the active layer by blocking the overflow of.

In order to realize the above technical problem, a nitride semiconductor light emitting device according to an embodiment of the present invention, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer; And an active layer having a multi-quantum well structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately stacked between the n-type and p-type nitride semiconductor layers, wherein the p-type nitride semiconductor layer is the active layer. An electron blocking layer having an energy band gap higher than that of the quantum barrier layer and the p-type nitride semiconductor layer, wherein the final quantum barrier layer closest to the electron blocking layer is the electron; The p-type impurity concentration in the region adjacent to the blocking film has the highest p-type impurity concentration than other regions of the final quantum barrier layer.

In this case, the final quantum barrier layer is preferably the energy band gap of the region adjacent to the quantum well layer is the same as the energy band gap of the quantum barrier layer other than the final quantum barrier layer.

In addition, the final quantum barrier layer preferably has an energy bandgap in a region adjacent to the quantum well layer larger than the bandgap of the quantum barrier layer other than the final quantum barrier layer.

The final quantum barrier layer may be undoped in a region adjacent to the quantum well layer, and may have a high p-type impurity concentration in a region adjacent to the electron blocking layer in a region adjacent to the quantum well layer. In addition, the final quantum barrier layer is preferably doped with p-type delta in the region adjacent to the electron blocking layer. In addition, the final quantum barrier layer preferably has a p-type impurity concentration of 1 × 10 ¹⁷ / cm 3 or more in a region adjacent to the electron blocking layer.

The semiconductor device further includes a growth substrate formed in contact with the n-type nitride semiconductor layer, wherein the electron blocking layer has a superlattice structure and is formed in contact with the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively. And a p-side electrode.

On the other hand, a nitride semiconductor light emitting device according to another embodiment of the present invention, n-type nitride semiconductor layer and p-type nitride semiconductor layer; And an active layer having a multi-quantum well structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately stacked between the n-type and p-type nitride semiconductor layers, wherein the p-type nitride semiconductor layer is the active layer. An electron blocking layer having an energy band gap higher than that of the quantum barrier layer and the p-type nitride semiconductor layer, wherein the final quantum barrier layer closest to the electron blocking layer is the quantum barrier layer; The energy bandgap of the region adjacent to the well layer has a larger energy bandgap than the quantum barrier layer other than the final quantum barrier layer.

In this case, the final quantum barrier layer has an energy band gap in which the energy band gap of the region adjacent to the electron blocking layer is smaller than the energy band gap of the region adjacent to the quantum well layer, or the final quantum barrier layer is formed of the electron blocking layer. It is preferable that the energy bandgap of the adjacent region has a lower energy bandgap than the quantum barrier layer other than the final quantum barrier layer.

The final quantum barrier layer may have a p-type impurity concentration higher in the region adjacent to the electron blocking layer than a region adjacent to the quantum well layer, and the final quantum barrier layer may further include a quantum well layer. Adjacent regions are undoped, and the final quantum barrier layer preferably has a high p-type impurity concentration in a region adjacent to the electron blocking layer in a region adjacent to the quantum well layer. In addition, the final quantum barrier layer is preferably doped with p-type delta in the region adjacent to the electron blocking layer. In addition, the final quantum barrier layer preferably has a p-type impurity concentration of 1 × 10 ¹⁷ / cm 3 or more in a region adjacent to the electron blocking layer.

The semiconductor device further includes a growth substrate formed in contact with the n-type nitride semiconductor layer, wherein the electron blocking layer has a superlattice structure and is formed in contact with the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively. And a p-side electrode.

As described above, according to the present invention, the reflow efficiency can be improved by simultaneously blocking the electron overflow phenomenon from the quantum well layer of the active layer having the superlattice structure and the electron overflow phenomenon to the p-type nitride semiconductor layer.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

First, FIG. 1 is a side sectional view showing a nitride semiconductor light emitting device according to an embodiment of the present invention.

As shown in FIG. 1, the nitride semiconductor light emitting device 100 includes an n-type nitride semiconductor layer 130, an active layer 140, and a p-type nitride semiconductor layer 160 sequentially formed on the substrate 110. . The n-side electrode 180 and the p-side electrode 170 are provided on the mesa-etched n-type nitride semiconductor layer 130 and the p-type nitride semiconductor layer 160, respectively. In addition, a buffer layer 120 is provided to mitigate lattice mismatch between the substrate 110 and the n-type nitride semiconductor layer 130, and the active layer 140 prevents electron overflow to the p-type nitride semiconductor layer 160. An electron blocking layer 150 for blocking is further provided in an area adjacent to the active layer.

In this case, the substrate 110 may use a sapphire substrate as a growth substrate provided for growth of the nitride-based semiconductor layer. Sapphire substrates are hexagonal-Rhombo R3c symmetric crystals with lattice constants in the c-axis and a-directions of 13.001 Å and 4.758 각각, respectively, C (0001) plane, A (1120) plane, and R ( 1102) surface and the like. In this case, the C plane is mainly used as a nitride growth substrate because it is relatively easy to grow a nitride thin film and stable at high temperatures.

However, the C plane is the polar plane, and the nitride semiconductor layer grown on the C plane has spontaneous polarization due to the ionicity characteristic and structural asymmetry (lattice constant a ≠ c) of the nitride semiconductor. When nitride semiconductors having different lattice constants are successively stacked, piezoelectric polarization occurs due to strain formed in the semiconductor layer. Due to such spontaneous polarization and piezoelectric polarization, the energy level of each interface is bent as shown in FIG. 2.

In addition, a substrate made of SiC, Si, GaN, AlN, or the like may be used as the substrate 110 for growing the nitride semiconductor light emitting device.

Meanwhile, in the present embodiment, the nitride semiconductor light emitting device having the horizontal structure including the substrate 110 is described as a reference. However, in the present invention, the substrate 110 is removed so that the electrodes face each other in the stacking direction of the nitride semiconductor layer. It can be applied to the vertical structure nitride semiconductor light emitting device.

In addition, the n-type nitride semiconductor layer 130 and the p-type nitride semiconductor layer 160 have an Al _x In _y Ga _(1-x- y) N composition formula (where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0). ≦ x + y ≦ 1), and may be made of a semiconductor material doped with n-type impurities and p-type impurities, respectively, and typically, GaN, AlGaN, InGaN. In addition, Si, Ge, Se, Te or C may be used as the n-type impurity, and the p-type impurity may be representative of Mg, Zn or Be. The n-type and p-type nitride semiconductor layers 130 and 160 may use known processes for growing nitride semiconductor layers. For example, organometallic vapor deposition (MOCVD), molecular beam growth (MBE), and hybrid vapor deposition may be used. (HVPE) and the like.

The active layer 140 has a multi-quantum well structure in which a plurality of quantum barrier layers 140a and quantum well layers 140b are alternately repeatedly stacked as superlattices so that electrons and holes recombine and emit light. The quantum well layer 140b is sandwiched between the portions 140a. Here, the quantum barrier layer 140a has a superlattice structure having a thickness through which tunnels of holes injected from the p-type nitride semiconductor layer 160 can be tunneled. In addition, the quantum barrier layer 140a is made of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 <y ≦ 1, 0 <x + y ≦ 1), and the quantum well layer 140b may be formed of In _z Ga _(1-z) N (0 ≦ _z ≦ 1).

The quantum barrier layer in contact with the electron blocking layer 150 among the quantum barrier layers 140a is called a final quantum barrier layer, and the energy band gap at the interface between the final quantum barrier layer and the adjacent quantum well layer is final quantum barrier layer. It is preferable that the energy bandgap of the quantum barrier layer other than the barrier layer is the same or larger in size.

In addition, it is preferable that the energy band gap of the final quantum barrier layer in contact with the electron blocking layer 150 is equal to or smaller in magnitude than that of the quantum barrier layer other than the final quantum barrier layer.

In addition, the final quantum barrier layer has a higher p-type impurity concentration in the region adjacent to the electron blocking layer 150 than other regions of the final quantum barrier layer. In particular, the p-type impurity concentration at the interface in contact with the electron blocking layer 150 is highest. High is preferred. Here, the p-type impurities are doped to a concentration of at least 1E17 / cm 3.

The thickness of the quantum barrier layer 140a of the superlattice structure employed in the present invention is preferably in the range of about 20 to about 40 mm 3, and the thickness of the quantum well layer 140 b is about 20 to about 40 mm in a similar range. desirable.

The electron blocking layer 150 is a layer for preventing electrons from overflowing, and is formed between the active layer 140 and the p-type nitride semiconductor layer 160, and Al _x Ga _(1-x) N (0 ≦ x ≤1) and have a high energy level. Since the electron blocking layer 150 has a higher electron mobility than holes, the electron blocking layer 150 is formed of a nitride semiconductor having an energy band gap higher than that of the adjacent quantum barrier layer 140a and the p-type nitride semiconductor layer 160. As a result, it is possible to prevent the electron injection efficiency into the active layer 140 from being greatly reduced by the electron blocking layer 150 provided as a high barrier.

In addition, the electron blocking layer 150 may be implemented in a superlattice structure for further improved electron blocking effect. For example, the electron blocking layer 150 may include a first film in contact with the p-type nitride semiconductor layer and a second film in contact with the active layer and having an energy band gap greater than that of the first film. In this case, in order to ensure electron blocking characteristics, the thickness of the first film is more preferably larger than the thickness of the second film.

FIG. 2 is a diagram showing a schematic energy band gap of conduction bands of an active layer and an adjacent region in the nitride semiconductor light emitting device according to the exemplary embodiment of the present invention illustrated in FIG. 1. Here, the dotted line shows the energy band gap state when the final quantum barrier layer is undoped, and means the energy band gap of the quantum barrier layer except for the final quantum barrier layer.

As shown in FIG. 2, energy bands of the quantum barrier layer 140a and the quantum well layer 140b of the nitride semiconductor light emitting device are bent by spontaneous polarization and piezoelectric polarization, and the electron blocking layer 150 is the active layer 140. In order to block electron overflow from the final quantum barrier layer to the p-type nitride semiconductor layer 160, the active band has an energy bandgap larger than that of the entire quantum barrier layer 140a.

In the final quantum barrier layer, the energy band gap of the region A adjacent to the quantum well layer 140b is the same as the energy band gap of the quantum barrier layer 140a other than the final quantum barrier layer. The adjacent region B has a higher p-type impurity concentration than the region A adjacent to the quantum well layer 140b.

That is, the final quantum barrier layer is doped with a high p-type impurity in the region (B) adjacent to the electron blocking film 150 to increase the energy level in this region to increase the energy difference between the final quantum barrier layer and the adjacent quantum well layer 140b. By increasing the ratio, electron overflow from the quantum well layer 140b is suppressed. Here, the p-type impurities are doped to a concentration of at least 1E17 / cm 3. In this case, the p-type impurity concentration is preferably formed of the undoped nitride semiconductor layer in the region of the final quantum barrier layer adjacent to the quantum well layer, and the higher the closer to the electron blocking layer 150.

3 is a graph showing the efficiency of a light emitting device according to the p-type doping concentration of the final quantum barrier layer region in contact with the electron blocking layer in the nitride semiconductor device shown in FIG. Here, FIG. 3 (a) shows the case where the electron blocking film is AlGaN, and FIG. 3 (b) shows the case where the AlGaN / GaN superlattice structure is used.

As shown in FIGS. 3A and 3B, the quantum barrier layer A in which the p-type impurity is doped is not doped in the final quantum barrier layer region B in contact with the electron blocking layer 150. It can be seen that the efficiency of the light emitting device is improved. Particularly, when the p-type doping concentration in the final quantum barrier layer region B in contact with the electron blocking layer 150 is higher than 1E17 / cm 3, the efficiency of the light emitting device is improved compared with the undoped quantum barrier layer A. Can be.

4 to 6 are diagrams showing schematic energy band gaps of conduction bands of active layers and adjacent regions of nitride semiconductor light emitting devices of various types that may be employed in the present invention. Here, since the structure of the nitride semiconductor light emitting device of FIGS. 4 to 6 is the same as that of FIG. 1, detailed descriptions of the same components will be omitted.

As shown in FIG. 4, the active layer 440 of the nitride semiconductor light emitting device includes a plurality of quantum barrier layers 440a and a quantum well layer 440b, and the electron blocking layer 450 includes the p-type nitride semiconductor layer 460. In order to block electron overflow into the active layer, the active band has an energy band gap larger than that of the entire quantum barrier layer 440a.

The final quantum barrier layer has an energy band gap in which the energy band gap of the region A adjacent to the quantum well layer 440b is larger than that of the quantum barrier layer 440b other than the final quantum barrier layer. Thereby, electron overflow from the quantum well layer 440b can be suppressed.

On the other hand, in order to block electron overflow to the p-type nitride semiconductor layer 460 as the energy difference between the electron blocking film 450 and the final quantum barrier layer becomes smaller, the final quantum barrier layer is formed in an area adjacent to the electron blocking film 450 ( B) is doped with a p-type impurity having a higher concentration than the region A adjacent to the quantum well layer 140b. In this case, the p-type impurity concentration is undoped in the region A of the final quantum barrier layer adjacent to the quantum well layer, and it is preferable to increase the closer to the electron blocking layer 450.

As illustrated in FIG. 5, the active layer 540 of the nitride semiconductor light emitting device includes a plurality of quantum barrier layers 540a and quantum well layers 540b, and the electron blocking layer 550 is the final layer of the active layer 540. In order to block electron overflow from the quantum barrier layer to the p-type nitride semiconductor layer 560, the energy band gap is larger than that of the entire quantum barrier layer 540a.

The final quantum barrier layer has an energy band gap in which the energy band gap of the region A adjacent to the quantum well layer 540b is larger than that of the quantum barrier layer 540b other than the final quantum barrier layer. The energy bandgap of the adjacent region B has the same energy bandgap as the quantum barrier layer 540b other than the final quantum barrier layer. That is, the final quantum barrier layer has an energy band gap in which the energy band gap of the region B adjacent to the electron blocking layer 550 is smaller than the energy band gap of the region A adjacent to the quantum well layer 540b. Thereby, electron overflow from the quantum well layer 540b can be suppressed.

As shown in FIG. 6, the active layer 640 of the nitride semiconductor light emitting device includes a plurality of quantum barrier layers 640a and quantum well layers 640b, and the electron blocking layer 650 is formed at the end of the active layer 640. In order to block electron overflow from the quantum barrier layer to the p-type nitride semiconductor layer 660, the energy band gap is larger than the energy band gap of the entire quantum barrier layer 640a of the active layer.

The final quantum barrier layer has an energy band gap in which the energy band gap of the region A adjacent to the quantum well layer 640b is larger than that of the quantum barrier layer 540b other than the final quantum barrier layer. The energy bandgap of the adjacent region B has a lower energy bandgap than the quantum barrier layer 540b other than the final quantum barrier layer. Thereby, the electron overflow from the quantum well layer 540b and the electron overflow to the p-type nitride semiconductor layer 660 can be suppressed simultaneously.

Meanwhile, as shown in FIG. 6, band bending is increased by controlling the energy band gap of the final quantum barrier layer, which increases the p-type impurity concentration in the final quantum barrier layer region B adjacent to the electron blocking layer 650. It is possible to ease the height.

Therefore, as shown in FIGS. 1 to 6, the present invention adopts an active layer and an electron blocking film of a superlattice structure to increase the quantum restraint force in the active layer and to effectively block electron overflow to the p-type nitride semiconductor layer. The final quantum barrier layer adjacent to the electron blocking layer has a higher p-type impurity concentration in the region adjacent to the electron blocking layer than the other region, and the energy band gap in the region adjacent to the quantum well layer is higher than the other quantum barrier layer.

In addition, in the present invention, the final quantum barrier layer adjacent to the electron blocking layer has an energy band in the region adjacent to the quantum well layer so as to increase the quantum confinement force in the active layer and effectively block electron overflow to the p-type nitride semiconductor layer. The gap is made higher than that of other quantum barrier layers, and the energy band gap in the region adjacent to the electron blocking layer is equal to or lower than that of other quantum barrier layers.

It is intended that the invention not be limited by the foregoing embodiments and the accompanying drawings, but rather by the claims appended hereto. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

1 is a side cross-sectional view showing a nitride semiconductor light emitting device according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating energy band gaps of an active layer and an adjacent region of the nitride semiconductor device illustrated in FIG. 1.

3 is a graph showing the efficiency of the light emitting device according to the current of the nitride semiconductor device shown in FIG.

4 to 6 are diagrams showing energy band gaps of active layers and adjacent regions of various types of nitride semiconductor devices employable in the present invention.

<Code Description of Main Parts of Drawing>

100 nitride semiconductor light emitting device 110 substrate

120: buffer layer 130: n-type nitride semiconductor layer

140: active layer 150: electron blocking film

160: p-type nitride semiconductor layer 170: p-side electrode

180: n-side electrode

Claims (21)

an n-type nitride semiconductor layer and a p-type nitride semiconductor layer; And Located between the n-type and p-type nitride semiconductor layer, and comprises a multi-quantum well structure active layer of a plurality of quantum barrier layer and a plurality of quantum well layer alternately stacked, The p-type nitride semiconductor layer is positioned adjacent to the active layer, and includes an electron blocking layer having a higher energy band gap than the quantum barrier layer and the p-type nitride semiconductor layer, The final quantum barrier layer closest to the electron blocking layer among the plurality of quantum barrier layers has a p-type impurity concentration higher than that of other regions of the final quantum barrier layer. A nitride semiconductor light emitting device. The method of claim 1, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the energy band gap of the region adjacent to the quantum well layer is the same as the energy band gap of the quantum barrier layer other than the final quantum barrier layer. The method of claim 1, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the energy band gap of the region adjacent to the quantum well layer is larger than the band gap of the quantum barrier layer other than the final quantum barrier layer. The method of claim 1, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the region adjacent to the quantum well layer is undoped. The method of claim 4, wherein And the final quantum barrier layer has a high p-type impurity concentration continuously in a region adjacent to the quantum well layer and adjacent to the electron blocking layer. The method of claim 1, And wherein the final quantum barrier layer has a p-type impurity concentration of at least 1 × 10 ¹⁷ / cm 3 in the electron blocking film and its adjacent region. The method of claim 1, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the p-type delta doped in the region adjacent to the electron blocking film. The method of claim 1, A nitride semiconductor light emitting device, characterized in that it further comprises a growth substrate formed in contact with the n-type nitride semiconductor layer. The method of claim 1, The electron blocking layer has a superlattice structure, characterized in that the nitride semiconductor light emitting device. The method of claim 1, And an n-side electrode and a p-side electrode formed in contact with the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively. an n-type nitride semiconductor layer and a p-type nitride semiconductor layer; And Located between the n-type and p-type nitride semiconductor layer, and comprises a multi-quantum well structure active layer of a plurality of quantum barrier layer and a plurality of quantum well layer alternately stacked, The p-type nitride semiconductor layer is positioned adjacent to the active layer, and includes an electron blocking layer having a higher energy band gap than the quantum barrier layer and the p-type nitride semiconductor layer, The final quantum barrier layer closest to the electron blocking layer among the plurality of quantum barrier layers has an energy band gap in which an energy band gap in a region adjacent to the quantum well layer is larger than a quantum barrier layer other than the final quantum barrier layer. A nitride semiconductor light emitting device. The method of claim 11, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the energy bandgap of the region adjacent to the electron blocking film has an energy bandgap smaller than the energy bandgap of the region adjacent to the quantum well layer. The method of claim 11, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the energy bandgap of the region adjacent to the electron blocking film has an energy bandgap smaller than the quantum barrier layer other than the final quantum barrier layer. The method according to claim 12 or 13, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the p-type impurity concentration in the region adjacent to the electron blocking film has a higher p-type impurity concentration than the region adjacent to the quantum well layer. The method of claim 14, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the region adjacent to the quantum well layer is undoped. The method of claim 15, And the final quantum barrier layer has a high p-type impurity concentration continuously in a region adjacent to the quantum well layer and adjacent to the electron blocking layer. The method of claim 14, And wherein the final quantum barrier layer has a p-type impurity concentration of at least 1 × 10 ¹⁷ / cm 3 in a region adjacent to the electron blocking film. The method of claim 11, The final quantum barrier layer is a nitride semiconductor light emitting device, characterized in that the p-type delta doped in the region adjacent to the electron blocking film. The method of claim 11, A nitride semiconductor light emitting device, characterized in that it further comprises a growth substrate formed in contact with the n-type nitride semiconductor layer. The method of claim 11, The electron blocking layer has a superlattice structure, characterized in that the nitride semiconductor light emitting device. The method of claim 11, And an n-side electrode and a p-side electrode formed in contact with the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

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