KR101007086B1

KR101007086B1 - Semiconductor light emitting device and fabrication method thereof

Info

Publication number: KR101007086B1
Application number: KR1020080086319A
Authority: KR
Inventors: 강대성
Original assignee: 엘지이노텍 주식회사
Priority date: 2008-09-02
Filing date: 2008-09-02
Publication date: 2011-01-10
Also published as: KR20100027410A

Abstract

The embodiment relates to a semiconductor light emitting device and a method of manufacturing the same.

A semiconductor light emitting device according to an embodiment includes a first conductive semiconductor layer; An active layer formed on the first conductive semiconductor layer; A second conductive semiconductor layer is formed on the active layer, and at least one of the first conductive semiconductor layer and the second conductive semiconductor layer includes a high conductive layer and a low conductive layer.

Semiconductor, light emitting device, current diffusion

Description

Semiconductor light emitting device and method of manufacturing the same {Semiconductor light emitting device and fabrication method

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. Ⅲ-Ⅴ nitride semiconductor is made of a semiconductor material having a compositional formula of normal _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1).

A light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.

It is widely used as a light emitting device for obtaining light of an LED or LD (Laser Diode) using such a nitride semiconductor material, and is applied as a light source of a product such as a keypad light emitting part of a terminal, an electric signboard, a lighting device, and the like.

The embodiment provides a semiconductor light emitting device capable of diffusing current by providing a high concentration layer and a low concentration layer in a first conductive semiconductor layer or a second conductive semiconductor layer, and a method of manufacturing the same.

According to the embodiment, a part of the first conductive semiconductor layer and / or the second conductive semiconductor layer is laminated in the order of the high conducting layer and the low conducting layer with respect to the current injection direction, thereby improving current spreading in the vertical and horizontal directions. Provided are a semiconductor light emitting device and a method of manufacturing the same.

A method of manufacturing a semiconductor light emitting device according to an embodiment may include forming a first conductive semiconductor layer including a high conductive layer and a low conductive layer; Forming an active layer on the first conductive semiconductor layer; Forming a second conductive semiconductor layer on the active layer.

Embodiments can improve current spreading.

The embodiment can improve the electrical and optical efficiency of the semiconductor light emitting device.

The embodiment can provide a device with strong ESD resistance.

Hereinafter, an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a diagram illustrating a semiconductor light emitting device according to a first embodiment, and FIG. 2 is a diagram illustrating a current moving state in a second conductive layer and a third conductive layer of FIG. 1.

Referring to FIG. 1, the semiconductor light emitting device 100 may include a substrate 110, an undoped semiconductor layer 120, a first conductive semiconductor layer 130, an active layer 140, and a second conductive semiconductor layer 150A. It includes.

The substrate 110 may use at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and may be used as a substrate having conductive properties. An uneven pattern may be formed on or below the substrate 110, and the uneven pattern may include any one of a stripe shape, a lens shape, a pillar shape, and a horn shape.

Group III-V group nitride semiconductors are grown on the substrate 110. The growth equipment may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), a plasma laser deposition (PLD), or a dual type thermal evaporator ( It can be formed by dual-type thermal evaporator (sputtering), metal organic chemical vapor deposition (MOCVD), etc., but is not limited to such equipment.

A buffer layer (not shown) may be formed on the substrate 110. The buffer layer may mitigate lattice mismatch between the GaN material and the substrate material, and may be formed of at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

An undoped semiconductor layer 120 may be formed on the substrate 110. The undoped semiconductor layer 120 may be an undoped GaN layer. The buffer layer and / or the undoped semiconductor layer 120 may not be formed or may not be present in the final device.

The first conductive semiconductor layer 130 may function as a first electrode contact layer, and may be formed of at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The first conductive semiconductor layer 130 is doped with a first conductive dopant. The first conductive dopant is an n-type dopant, and includes Si, Ge, Sn, Se, and Te.

The first conductive semiconductor layer 130 may supply a silane gas including an n-type dopant such as NH ₃ , TMGa (or TEGa), and Si to form an n-type GaN layer having a predetermined thickness.

The first conductive semiconductor layer 130 includes a current spreading structure in a predetermined region. The current spreading structure may be configured to horizontally spread the applied current by suppressing vertical diffusion, and may include a structure in which layers having different dopant concentrations are stacked.

The first conductive semiconductor layer 130 includes first to third conductive layers 131, 132, and 133. The first conductive layer 131 is formed on the undoped semiconductor layer 120, and the second conductive layer 132 and the third conductive layer 133 have a current diffusion structure on the first conductive layer 131. ) Are formed alternately.

The first conductive layer 131 may be formed of an n-type semiconductor layer having a normal concentration or an n-type semiconductor layer having a high concentration. Here, the first conductive dopant may be doped in the first conductive layer 131, and the doping concentration may be doped at 5˜6 × 10 ¹⁶ cm ⁻³ or more.

The second conductive layer 132 is a layer in which current movement is actively performed in a horizontal direction, and the third conductive layer 133 is a current movement in a vertical direction with respect to the current of the second conductive layer 132 beneath it. It functions as a layer to suppress it. That is, the second conductive layer 132 may be a high concentration layer and a low resistance layer, and the third conductive layer 133 may be a low concentration layer and a high resistance layer. The reference for the high conductive layer, the high resistance layer, the low conductive layer, and the low resistance layer in the first conductive semiconductor layer 130 is based on the n-type semiconductor layer having a normal concentration in the first conductive semiconductor layer 130. The first conductive layer 131 may be defined as a layer having high conductivity, high resistance, low conductivity, and low resistance.

The doping concentration of the first conductive dopant of the second conductive layer 132 is 5-9 × 10 ¹⁸ cm ⁻³ or more, and the doping concentration of the first conductive dopant of the third conductive layer 133 is 1˜2. Doped to 5 x 10 ¹⁵ cm ^-3 or less. In addition, the third conductive layer 133 may be further doped with a second conductive dopant or may not be doped with the dopant.

Sheet resistivity of the second conductive layer 132 may be formed in the range of 60 ~ 80 Ω / sq, and sheet resistivity of the third conductive layer 133 may be formed in the range of 100 ~ 200 Ω / sq.

The second conductive layer 132 may be formed of at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and the third conductive layer 133 may be formed of GaN, InN, AlN, InGaN, AlGaN, InAlGaN. , AlInN may be formed of at least one. The semiconductor material of the second conductive layer 132 and the semiconductor material of the third conductive layer 133 may be the same or different.

The second conductive layer 132 and the third conductive layer 133 may be formed periodically, and may be formed in 1 to 50 cycles. The thicknesses of the second conductive layer 132 and the third conductive layer 133 may be 500 to 1000 mW. Here, the thickness may refer to the overall thickness of the second conductive layer 132 and the third conductive layer 133 or the thickness of at least one cycle.

The formation positions of the second conductive layer 132 and the third conductive layer 133 may be formed at a predetermined position of the first conductive semiconductor layer 130, and may be formed at, for example, an upper layer portion or a center thereof.

Here, the second conductive layer 132 or the third conductive layer 133 may be formed on the uppermost layer of the first conductive semiconductor layer 130 (eg, a layer in contact with the active layer). The second conductive layer 132 may be formed.

As shown in FIG. 2, since the third conductive layer 133 is a low concentration layer, electrons (-) of the second conductive layer 132 beneath it move from the second conductive layer 132 to the third conductive layer 133. The movement M1 in the vertical direction is suppressed. Accordingly, the movement M1 of the second conductive layer 132 is suppressed in the vertical direction, and the movement M2 in the horizontal direction becomes larger than the movement M1 in the vertical direction. That is, the third conductive layer 133 has a vertical current movement suppression effect, and the second conductive layer 132 has a current spreading effect in a horizontal direction by the third conductive layer 133.

The movement of carrier electrons in the second conductive layer 132 is diffused in the horizontal direction and the vertical direction. In this case, since the third conductive layer 133 is disposed on the second conductive layer 132, the carrier electrons in the second conductive layer 132 move in the horizontal direction rather than in the vertical direction M1. M2 and M3) become large. That is, the carrier electrons have a larger speed of movement M2 in the horizontal direction than the speed of movement M1 in the vertical direction by the third conductive layer 133.

In addition, since the cycles of the second conductive layer 132 and the third conductive layer 133 are repeated several cycles, the current can be uniformly spread to a wider area.

Accordingly, current is diffused from the second conductive layer 132 of the first conductive semiconductor layer 130 to be supplied to the third conductive layer 133 so that carrier electrons may be uniformly injected into the active layer 140. .

An active layer 140 is formed on the first conductive semiconductor layer 130. The active layer 140 may be formed of a single quantum well or a multiple quantum well (MQW) structure, and may be formed of InGaN / GaN or AlGaN / GaN.

A first conductive clad layer (not shown) may be formed between the first conductive semiconductor layer 130 and the active layer 140. The first conductive clad layer may be formed of n-type AlGaN.

The second conductive semiconductor layer 150A is formed on the active layer 140. The second conductive semiconductor layer 150A may be implemented as a p-type semiconductor layer doped with a second conductive dopant. The p-type semiconductor layer may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The second conductive dopant is a p-type dopant, and at least one of Mg, Zn, Ca, Sr, and Ba may be added.

The second conductive semiconductor layer 150A may supply a gas including a p-type dopant such as NH ₃ , TMGa (or TEGa), and Cp 2 Mg to form a p-type GaN layer having a predetermined thickness.

A transparent electrode layer (not shown) may be formed on the second conductive semiconductor layer 150A. The transparent electrode layer may be formed by selecting from materials of ITO, ZnO, IrOx, RuOx, NiO. In the semiconductor light emitting device 100, the first conductive semiconductor layer 130 may be an n-type semiconductor layer, and the second conductive semiconductor layer 150A may be a p-type semiconductor layer or an inverse structure thereof. . In addition, an n-type semiconductor layer or a p-type semiconductor layer may be formed on the second conductive semiconductor layer 150A. Accordingly, the semiconductor light emitting device 100 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The current applied to the first conductive semiconductor layer 130 is evenly spread (current spreading) over the entire area by the second conductive layer 132 and the third conductive layer 133, and the active layer ( 140). Since the current is uniformly injected into the active layer 140, the light efficiency is improved.

In addition, since the entire device disperses and eliminates the instantaneous voltage caused by reverse voltage or static electricity in the light emitting device 100, the electro-static discharge (ESD) immunity is also increased, and the increase of the ESD resistance improves the life and reliability of the device. You can.

3 is a side cross-sectional view illustrating a semiconductor light emitting device according to a second embodiment, and FIG. 4 is a diagram illustrating a current movement state in the fourth conductive layer and the fifth conductive layer of FIG. 3. The second embodiment will be denoted by the same reference numerals for the same parts as the first embodiment, and description thereof will be omitted.

Referring to FIG. 3, the semiconductor light emitting device 100A includes a first conductive semiconductor layer 130A, an active layer 140, and a second conductive semiconductor layer 150 having a current diffusion structure. The current diffusion structure of the second conductive semiconductor layer 150 is a layer capable of diffusing an applied current, and may include a structure in which layers having different dopant concentrations are stacked.

The second conductive semiconductor layer 150 includes fourth to sixth conductive layers 151, 152, and 155. The fourth and fifth conductive layers 151 and 152, which are the current diffusion structures of the second conductive semiconductor layer 150, may be formed close to or adjacent to the active layer 140.

The fourth conductive layer 151 or the fifth conductive layer 152 may be disposed on the lowermost layer in contact with the active layer 140, and preferably the fourth conductive layer 151 may be disposed.

The fourth conductive layer 151 and the fifth conductive layer 152 may be formed periodically, and the period of the fourth conductive layer 151 and the fifth conductive layer 152 may be formed in 1 to 50 cycles. Either conductive layer 151 or 152 may be more.

The fourth conductive layer 151 and the fifth conductive layer 152 may have a thickness of about 100 to about 300 kW. The thickness may be represented by the thickness of one cycle or the total thickness of the fourth conductive layer 151 and the fifth conductive layer 152.

The fourth conductive layer 151 is a low concentration layer, and may be formed with a hole concentration of 1 to 5 × 10 ¹⁵ cm ⁻³ or less by doping the second conductive dopant. The fourth conductive layer 151 may be doped with the first conductive dopant or may not be doped with the conductive dopant.

As a layer of the fifth conductive layer 152 has a high concentration, the doped a second conductivity type dopant 3 ~ 8 × 10 ¹⁷ cm ^- can be formed of ^three or more hole concentration.

Sheet resistivity of the fourth conductive layer 151 may be formed in the range of 200 ~ 600K Ω / sq, and sheet resistivity of the fifth conductive layer 152 may be formed in the range of 10 ~ 15K Ω / sq.

The fourth conductive layer 151 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and the second conductive layer 152 may include GaN, InN, AlN, InGaN, It may be made of any one of compound semiconductors such as AlGaN, InAlGaN, AlInN. The semiconductor material of the first conductive layer 151 and the semiconductor material of the second conductive layer 152 may be the same or different.

The sixth conductive layer 155 on the fifth conductive layer 152 includes a p-type semiconductor layer having a normal concentration or a p-type semiconductor layer doped at a high concentration. Here, the p-type semiconductor layer of the normal concentration may be doped with a hole carrier concentration of about 1 ~ 9 × 10 ¹⁷ cm ^-3 or more.

The reference for the high conductive layer, the high resistance layer, the low conductive layer, and the low resistance layer in the second conductive semiconductor layer 150 is a p-type semiconductor layer having a normal concentration in the second conductive semiconductor layer 150. The sixth conductive layer 155 may be defined as a layer having high conductivity, high resistance, low conductivity, and low resistance.

When a current is applied on the second conductive semiconductor layer 150, the current passes through the sixth conductive layer 155 through the structures of the fifth conductive layer 152 and the fourth conductive layer 151. 140). In this case, the current is further diffused in the horizontal direction in the fifth conductive layer 152, and the movement of the current in the fifth conductive layer 152 in the vertical direction is suppressed in the fourth conductive layer 151. Accordingly, the current supplied to the fifth conductive layer 152 may be diffused in the horizontal direction and injected into the active layer 140 via the fourth conductive layer 151.

Referring to FIG. 4, a hole (+) in the fifth conductive layer 152 is moved in the horizontal direction and the vertical direction. At this time, the movement of the hole (+) is larger in the horizontal direction (M5, M6) than in the vertical direction (M4). This is because the low concentration of the sixth conductive layer 155 is formed on the high concentration of the fifth conductive layer 152, so that the hole carriers are in a horizontal direction than the speed of the movement M4 proceeding to the fifth conductive layer 152. Since the moving speeds M5 and M6 become large, they can be spread in a wide distribution.

In addition, since the cycles of the fifth conductive layer 152 and the fourth conductive layer 151 are repeated several cycles, the current can be uniformly spread to a wider area.

5 is a side cross-sectional view illustrating a semiconductor light emitting device according to a third embodiment. The third embodiment will be denoted by the same reference numerals for the same parts as the first embodiment and the second embodiment, and description thereof will be omitted.

Referring to FIG. 5, the semiconductor light emitting device 100B includes a first conductive semiconductor layer 130 and a second conductive semiconductor layer 150 each having a current diffusion structure.

The first conductive semiconductor layer 130 includes first to third conductive layers 131, 132 and 133, and the second to third conductive layers 132 and 133 suppress current from moving in the vertical direction and move in the horizontal direction. It is a structure to improve the movement. That is, the dopant is doped at a high concentration in the second conductive layer 132, and the dopant is doped at a low concentration in the third conductive layer 133, so that electrons are formed at the third conductive layer in the second conductive layer 132. The direction of the conductive layer 133, that is, the movement in the horizontal direction is greater than the movement in the vertical direction, so that diffusion in the horizontal direction is possible.

The second conductive semiconductor layer 150 includes fourth to sixth conductive layers 151, 152, and 155, and a current supplied from the fifth conductive layer 152 to the fourth conductive layer 151, that is, to the vertical direction. The movement in the horizontal direction is greatly increased and injected into the active layer 140 via the fourth conductive layer 151.

The uppermost layer of the first conductive semiconductor layer 130 may be a third conductive layer 133 which is a high conductive layer, and the lowermost layer of the second conductive semiconductor layer 150 may be a fourth conductive layer ( 151 may be disposed or a fifth conductive layer 152 that is a high conductive layer may be disposed, but is not limited thereto.

Since the active layer 140 is injected with electrons and holes in a uniform distribution in all areas, the holes and electrons are evenly coupled in all areas to generate light. Accordingly, the luminous efficiency of the semiconductor light emitting device 100B may be improved.

6 is a side cross-sectional view illustrating a horizontal semiconductor light emitting device using FIG. 1. In the description of FIG. 6, duplicate descriptions of the above-mentioned elements will be omitted.

Referring to FIG. 6, in the semiconductor light emitting device 100C, a first electrode 161 is formed on a first conductive semiconductor layer 130, and a second electrode 163 is formed on the second conductive semiconductor layer 150A. Is formed.

Here, a part of the first conductive semiconductor layer 130 may be mesa etched, and in the mesa etching process, the first conductive semiconductor layer 130 may be etched to a depth at which the first conductive layer 131 of the first conductive semiconductor layer 130 is exposed. have. That is, the mesa etch depth may be formed below the current diffusion structure (ie, 132,133). The formation position of the first electrode 161 may be formed below the horizontal extension line of the stacked structure of the second conductive layer 132 and the third conductive layer 133.

The first electrode 161 may be formed on the first conductive layer 131 in the first conductive semiconductor layer 130. One or more first electrodes 161 formed on the first conductive layer 131 may be formed.

Since the first conductive semiconductor layer 130 receives current through the first electrode 161 disposed on the side thereof, current may be concentrated and flowed, and the second conductive layer 132 having a current diffusion structure and The third conductive layer 133 may diffuse and flow the current to all regions.

In addition, in a horizontal semiconductor light emitting device having a chip having a large area, for example, 500 μm × 500 μm, and having a thickness of 10 μm or less, current concentration may be relatively increased, and this problem may be solved by a current diffusion structure. have.

In the second conductive layer 132 of the first conductive semiconductor layer 130, the current is diffused in the horizontal direction because the mobility in the horizontal direction is greater than the vertical direction which is the direction of the third conductive layer 133. do. In addition, the second conductive layer 132 and the third conductive layer 133 are formed to be periodically repeated so that the current can be evenly distributed to all areas of the layer flow.

Current applied through the first electrode 161 formed on one side of the first conductive semiconductor layer 130 of the horizontal semiconductor light emitting device 100C is transferred from the first conductive semiconductor layer 130 to the entire region. Diffusion is injected into the active layer 140. This current spreading effect can improve light efficiency and provide a device with high ESD resistance.

FIG. 7 is a side cross-sectional view illustrating a vertical semiconductor light emitting device using FIG. 1. In the description of FIG. 7, redundant descriptions of the above-mentioned elements will be omitted.

Referring to FIG. 7, the vertical semiconductor light emitting device 100F forms the reflective electrode layer 171 on the second conductive semiconductor layer 150A of the semiconductor light emitting device 100 as shown in FIG. 1, and the reflective electrode layer 171. ) To form a conductive support member 175. The reflective electrode layer 171 includes at least one of Al, Ag, Pd, Rh, Pt, or a mixed metal thereof, and the conductive support member 175 may be formed of copper or gold, but is not limited thereto.

The substrate (110 of FIG. 1) and the undoped semiconductor layer (120 of FIG. 1) are then removed by physical and / or chemical methods. Here, the physical removal method uses an LLO method of irradiating a laser of a specific wavelength on the substrate (110 of FIG. 1). In addition, the chemical removal method may remove the substrate and the undoped semiconductor layer by injecting an etchant into the undoped semiconductor layer (120 of FIG. 1).

The first electrode 161 may be formed under the first conductive semiconductor layer 130, and the first electrode 161 may be formed in at least one or a predetermined pattern shape. The current applied from the first electrode 161 to the first conductive semiconductor layer 130 is diffused to the entire area by the second conductive layer 132 and the third conductive layer 133 which are formed periodically to form an active layer ( 140).

FIG. 8 is a view illustrating a vertical semiconductor light emitting device using FIG. 3. In the description of FIG. 8, duplicate descriptions of the above-mentioned elements will be omitted.

Referring to FIG. 8, in the vertical semiconductor light emitting device 100G, after forming the reflective electrode layer 171 and the conductive support member 175 on the second conductive semiconductor layer 150, the substrate and the substrate shown in FIG. The undoped semiconductor layer is removed. In addition, a first electrode 161 is formed under the first conductive semiconductor layer 130A.

In the second conductive semiconductor layer 150, the vertical movement of the current is suppressed by the fourth conductive layer 151, and the current movement in the horizontal direction is diffused by the fifth conductive layer 152 to thereby spread the active layer 140. The hole carriers are supplied to the entire area of).

9 is a side cross-sectional view illustrating a vertical semiconductor light emitting device using FIG. 5. In the description of FIG. 9, redundant descriptions of the above-mentioned elements will be omitted.

9, in the vertical semiconductor light emitting device 100H, a current diffusion structure is formed in the first conductive semiconductor layer 130 and the second conductive semiconductor layer 150.

In the first conductive semiconductor layer 130, movement of the current applied by the third conductive layer 133 in the vertical direction (that is, the direction of the third conductive layer thereon) is suppressed, and the second conductive layer ( 132 increases the current movement in the horizontal direction. As a result, the electron carrier can be diffused to the entire region.

In the second conductive semiconductor layer 150, the movement of the current applied by the fourth conductive layer 151 in the vertical direction (that is, the fourth conductive layer direction below it) is suppressed, and the fifth conductive layer ( 152 increases the current movement in the horizontal direction. As a result, the hole carriers can be diffused to the entire area.

In the above-described embodiment, by forming a current diffusion structure stacked on the first conductive semiconductor layer and / or the second conductive semiconductor layer in a high conductive layer / low conductive layer in the direction of the current application, The current can be evenly spread over the entire region without being greatly influenced by the formation position and size of the first electrode or the second electrode.

In addition, by forming a current diffusion structure including a lamination structure of a high conductivity layer / low conductivity layer on at least one of the conductive semiconductor layers above and below the active layer, electrons and / or holes in the active layer are evenly distributed throughout the layer. It can be distributed and injected. Accordingly, the luminous efficiency of the active layer can be improved.

In the description of an embodiment, each layer (film), region, pattern or structure is formed to be "on" or "under" the substrate, each layer (film), region, pad or pattern. In the case described, "on" and "under" include both the meanings of "directly" and "indirectly". In addition, the reference to the top or bottom of each layer will be described with reference to the drawings, the thickness of each layer in the drawings will be described as an example.

Although the above has been described with reference to the embodiments, these are merely examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains have various examples that are not exemplified above without departing from the essential characteristics of the present invention. It will be appreciated that eggplant modifications and applications are possible. For example, each component shown in detail in the embodiment of the present invention may be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a side sectional view showing a semiconductor light emitting device according to the first embodiment;

FIG. 2 is a view illustrating a current moving state in the second conductive layer and the third conductive layer of FIG. 1.

3 is a side sectional view showing a semiconductor light emitting device according to the second embodiment;

4 is a diagram illustrating current abnormalities in the fourth conductive layer and the fifth conductive layer of FIG. 3;

5 is a side sectional view showing a semiconductor light emitting device according to the third embodiment;

6 is a side cross-sectional view illustrating a horizontal semiconductor light emitting device using FIG. 1.

FIG. 7 is a side cross-sectional view illustrating a vertical semiconductor light emitting device using FIG. 1. FIG.

8 is a side cross-sectional view illustrating a vertical semiconductor light emitting device using FIG. 3.

9 is a side cross-sectional view illustrating a vertical semiconductor light emitting device using FIG. 5.

Claims

A first conductive semiconductor layer having a current spreading structure and including a first conductive dopant;

An active layer formed on the first conductive semiconductor layer; And

A second conductive semiconductor layer including a second conductive dopant on the active layer,

The current spreading structure of the first conductive semiconductor layer includes a first conductive layer and a second conductive layer including the first conductive dopant, and the second conductive layer is closer to the active layer than the first conductive layer. And a first conductive dopant concentration of the first conductive layer is greater than a first conductive dopant concentration of the second conductive layer, and the second conductive layer further includes a second conductive dopant. .

A first conductive semiconductor layer having a first current diffusion structure and comprising a first conductive dopant;

An active layer formed on the first conductive semiconductor layer; And

A second conductive semiconductor layer having a second current diffusion structure on the active layer and including a second conductive dopant,

The first current diffusion structure of the first conductive semiconductor layer includes a first conductive layer and a second conductive layer including the first conductive dopant, and the second conductive layer is the active layer rather than the first conductive layer. The concentration of the first conductive dopant of the first conductive layer is greater than that of the first conductive dopant of the second conductive layer, and the second conductive layer further comprises a second conductive dopant; ,

The second current diffusion structure of the second conductive semiconductor layer includes a third conductive layer and a fourth conductive layer including the second conductive dopant, and the third conductive layer is the active layer rather than the fourth conductive layer. And a second conductive dopant concentration of the fourth conductive layer is greater than a second conductive dopant concentration of the third conductive layer, and the third conductive layer further comprises a first conductive dopant. Light emitting element.

The method according to claim 1 or 2,

The first conductive layer and the second conductive layer is a semiconductor light emitting device is formed in 1 to 50 cycles.

The method of claim 2,

The third conductive layer and the fourth conductive layer is a semiconductor light emitting device is formed in 1 to 50 cycles.

The method according to claim 1 or 2,

The first conductive dopant is an n-type dopant,

Doping concentration of the first conductive dopant of the first conductive layer is 5 ~ 9 × 10 ¹⁸ cm ^-3 or more,

The doping concentration of the first conductive dopant of the second conductive layer is a semiconductor light emitting device comprising 1 ~ 5 × 10 ¹⁵ cm ^-3 or less.

The method of claim 1,

The first conductive layer includes a semiconductor layer having a lower resistance than the second conductive layer.

The method of claim 2,

The second conductive dopant is a p-type dopant,

The second conductive dopant concentration of the third conductive layer is formed to 1 ~ 5 × 10 ¹⁵ cm ^-3 or less,

The second conductive dopant concentration of the fourth conductive layer is formed of 3 ~ 8 × 10 ¹⁷ cm ^-3 or more.

The method according to claim 1 or 2,

And at least one of a second electrode, a transparent electrode layer, a reflective electrode layer, and an n-type semiconductor layer formed on the second conductive semiconductor layer.

The method according to claim 1 or 2,

The first conductive layer includes at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN,

The second conductive layer includes at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN.

The method of claim 9,

And the first conductive layer and the second conductive layer are formed of the same semiconductor material.

The method according to claim 1 or 2,

The thickness of the first conductive layer and the second conductive layer of the first conductive semiconductor layer is 500 ~ 1000Å.

The method of claim 2,

The thickness of the third conductive layer and the fourth conductive layer of the second conductive semiconductor layer is formed to 100 ~ 300Å.

The method according to claim 1 or 2,

The first conductive semiconductor layer includes an n-type nitride semiconductor layer having a dopant concentration different from the dopant concentration added to the first conductive layer under the first conductive layer,

The n-type dopant concentration of the n-type nitride semiconductor layer comprises a 5 ~ 6 × 10 ¹⁶ cm ^-3 or more.

The method of claim 2,

The second conductive semiconductor layer includes a p-type nitride semiconductor layer having a dopant concentration different from the dopant concentration added to the fourth conductive layer on the fourth conductive layer.

The second conductive dopant concentration of the p-type nitride semiconductor layer is 1 ~ 9 × 10 ¹⁷ cm ^-3 or more comprising a semiconductor light emitting device.

The method of claim 1,

Electrically connecting a first electrode to the first conductive semiconductor layer,

And the first conductive layer and the second conductive layer are disposed between the active layer and the first electrode.

The method of claim 2,

The first conductive dopant is an n-type dopant, the second conductive dopant is a p-type dopant,

The doping concentration of the first conductive dopant of the first conductive layer is 5-9 × 10 ¹⁸ cm ⁻³ or more, and the doping concentration of the first conductive dopant of the second conductive layer is 1-5 × 10 ¹⁵ cm ^{−. 3} or less;

The second conductive dopant concentration of the third conductive layer is formed to 1 ~ 5 × 10 ¹⁵ cm ^-3 or less, the second conductive dopant concentration of the fourth conductive layer is 3 ~ 8 × 10 ¹⁷ cm ^-3. A semiconductor light emitting element formed as described above.

The method according to claim 1 or 2,

A first electrode under the first conductive semiconductor layer;

A reflective electrode layer on the second conductive semiconductor layer; And a conductive support member on the reflective electrode layer.