CN114346452A - Novel MARK point manufacturing graphic design for improving MARK point subfissure - Google Patents
Novel MARK point manufacturing graphic design for improving MARK point subfissure Download PDFInfo
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- CN114346452A CN114346452A CN202210020458.8A CN202210020458A CN114346452A CN 114346452 A CN114346452 A CN 114346452A CN 202210020458 A CN202210020458 A CN 202210020458A CN 114346452 A CN114346452 A CN 114346452A
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- drawing line
- mark point
- subfissure
- mark
- longitudinal drawing
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 230000011218 segmentation Effects 0.000 claims description 13
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 8
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 8
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 238000010147 laser engraving Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a novel MARK point drawing design for improving MARK point subfissure, and relates to the field of MARK point drawing design. According to the invention, through the arrangement of the segment region 303, when the upper longitudinal drawing line 301 and the lower longitudinal drawing line 302 are combined into the longitudinal drawing line 3 and then matched with the transverse drawing line 2, repeated carving regions can not occur, and the graph is drawn in a segmented manner, so that secondary damage to a silicon wafer can be effectively avoided, the problem of subfissure of a MARK point region can be greatly reduced, the yield can be improved, and the condition that the silicon wafer of the MARK point region has subfissure due to secondary laser carving of the central region of the MARK point can be avoided.
Description
Technical Field
The invention relates to the field of MARK point manufacturing graph design, in particular to a novel MARK point manufacturing graph design for improving MARK point subfissure.
Background
With the development of science and technology of crystalline silicon batteries, PERC batteries become the mainstream of the market gradually, the PERC batteries and the PERC superposition new technology batteries become mature gradually in the development of the next years and move towards industrial production, the PERC superposition Selective Emitter (SE) technology is a technical path for effectively improving the efficiency of the batteries, and is a technical means which is easy to realize and low in cost.
In the process flow of the single crystal PERC superposition selective emitter technology (SE), according to the requirement of the grabbing point positioning of the screen printing process, MARK points required by screen printing need to be manufactured in the manufacturing process of the selective emitter technology, and when the conventional MARK points (1) are manufactured, a transverse drawing line 2 is firstly engraved by laser engraving, and then a longitudinal drawing line 3 is engraved, so that a cross point 4 (see the attached drawing 1) can be formed.
The conventional MARK point manufacturing pattern is directly composed of two cross lines (see fig. 1), when the MARK point is engraved by laser, a cross shape is engraved in sequence, the central cross area of the cross shape is subjected to laser engraving twice, it is needless to say that damage of the area is doubled, damage of the central area is greatly increased, and therefore silicon wafers in the area are subjected to subfissure, and yield is reduced.
Disclosure of Invention
Based on the above, the invention aims to provide a novel MARK point manufacturing graphic design for improving MARK point subfissure, so as to solve the technical problem of subfissure of a silicon wafer in a MARK point region caused by secondary laser engraving in a MARK point central region.
In order to achieve the purpose, the invention provides the following technical scheme: a novel MARK point manufacturing graphic design for improving MARK point subfissure comprises MARK points, wherein each MARK point consists of a transverse drawing line and a longitudinal drawing line, and the transverse drawing lines and the longitudinal drawing lines are arranged in a crossed mode.
Further, the MARK point is a position identification point of a PCB applied to an automatic chip mounter in circuit board design, and the MARK point is applied to a PERC superposition selective emitter technology.
By adopting the technical scheme, the chip mounting efficiency of the automatic chip mounter can be directly influenced by selecting the MARK point.
Furthermore, the length of the transverse drawing line is consistent with that of the longitudinal drawing line, and the width of the transverse drawing line is consistent with that of the longitudinal drawing line.
By adopting the technical scheme, the MARK points are more regular after being formed.
Further, the diameters of the transverse drawing line and the longitudinal drawing line are both 1 mm.
By adopting the technical scheme, the error of the MARK point after molding is smaller.
Further, the longitudinal drawing line comprises an upper longitudinal drawing line, a lower longitudinal drawing line and a segmentation area.
Through adopting above-mentioned technical scheme, through the setting of segmentation district for with horizontal drawing line cooperation after vertical drawing line is made up into to last vertical drawing line and lower vertical drawing line, repeated sculpture region can not appear, draws the figure through the sectional type, can effectually avoid the secondary damage to the silicon chip, reduce the hidden problem of splitting in MARK point region by a wide margin.
Further, the upper longitudinal drawing line and the lower longitudinal drawing line are symmetrically arranged by taking the segmentation area as a center.
By adopting the technical scheme, the upper longitudinal drawing line and the lower longitudinal drawing line have the same carving mode, and the carving process is simplified.
Further, the width of the segment area is adapted to the width of the transverse drawing line.
By adopting the technical scheme, when the transverse drawing line is crossed with the upper longitudinal drawing line and the lower longitudinal drawing line, no crossed area exists.
In summary, the invention mainly has the following beneficial effects:
1. according to the invention, the longitudinal drawing line, the upper longitudinal drawing line, the lower longitudinal drawing line and the segmentation area are arranged, and the segmentation area is arranged, so that the upper longitudinal drawing line and the lower longitudinal drawing line are combined into the longitudinal drawing line and then matched with the transverse drawing line, repeated carving areas can not occur, and the sectional drawing is carried out, so that secondary damage to a silicon wafer can be effectively avoided, the problem of subfissure of a MARK point area is greatly reduced, and the condition that the silicon wafer of the MARK point area has subfissure due to secondary laser carving of the MARK point central area is avoided, so that the yield can be improved.
Drawings
FIG. 1 is a diagram of a conventional MARK point making pattern design;
FIG. 2 is a graph design of the MARK dots of the present invention.
In the figure: 1. MARK point; 2. drawing lines in the transverse direction; 3. drawing lines longitudinally; 301. drawing lines in the upper longitudinal direction; 302. drawing lines in the lower longitudinal direction; 303. a segmentation area; 4. the intersection point.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The following description will be made of an alignment example according to the overall structure of the present invention.
A novel MARK point manufacturing graphic design for improving MARK point subfissure is shown in figure 2, and comprises MARK points 1, wherein the MARK points 1 are composed of a transverse drawing line 2 and a longitudinal drawing line 3, the MARK points 1 are position identification points of a PCB applied to an automatic chip mounter in circuit board design, the MARK points 1 are applied to a PERC stacked selective emitter SE technology, the selection of the MARK point 1 can directly influence the chip mounting efficiency of the automatic chip mounter, the length of the transverse drawing line 2 is consistent with that of the longitudinal drawing line 3, the width of the transverse drawing line 2 is consistent with that of the longitudinal drawing line 3, so that the MARK points 1 are more regular after being formed, the diameters of the transverse drawing line 2 and the longitudinal drawing line 3 are both 1mm, the error of the MARK point 1 after molding is smaller, the transverse drawing line 2 and the longitudinal drawing line 3 are arranged in a crossed manner, and the longitudinal drawing line 3 comprises an upper longitudinal drawing line 301, a lower longitudinal drawing line 302 and a segmentation area 303.
Referring to fig. 2, the vertical drawing line 3 includes an upper vertical drawing line 301, a lower vertical drawing line 302 and a segmentation region 303, the upper vertical drawing line 301 and the lower vertical drawing line 302 are symmetrically disposed with the segmentation region 303 as a center, so that the upper longitudinal drawing line 301 and the lower longitudinal drawing line 302 are carved in the same way, the carving process is simplified, the width of the segment area 303 is matched with the width of the transverse drawing line 2, so that, when the horizontal drawing line 2 crosses the upper vertical drawing line 301 and the lower vertical drawing line 302, there is no crossing region, by arranging the segmentation area 303, the upper longitudinal drawing line 301 and the lower longitudinal drawing line 302 are combined into the longitudinal drawing line 3 and then matched with the transverse drawing line 2, no repeated carving area occurs, the drawing is carried out by segmentation, the secondary damage to the silicon wafer can be effectively avoided, and the problem of subfissure of the MARK point region is greatly reduced.
The implementation principle of the embodiment is as follows: firstly, through the arrangement of the segment region 303, when the upper longitudinal drawing line 301 and the lower longitudinal drawing line 302 are combined into the longitudinal drawing line 3 and then are matched with the transverse drawing line 2, repeated carving regions can not occur, the graph is drawn through the segment type, the secondary damage to the silicon wafer can be effectively avoided, the problem of subfissure of the MARK point region can be greatly reduced, the condition that the silicon wafer of the MARK point region has subfissure due to secondary laser carving of the MARK point central region can be avoided, the yield can be improved, the design scheme can be completely compatible on the existing laser doping equipment, the cost can not be increased, the stability in the industrial production process is good, and the normal production can not be influenced.
Although embodiments of the present invention have been shown and described, it is intended that the present invention should not be limited thereto, that the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples, and that modifications, substitutions, variations or the like, which are not inventive and may be made by those skilled in the art without departing from the principle and spirit of the present invention and without departing from the scope of the claims.
Claims (7)
1. A novel MARK point manufacturing pattern design for improving MARK point subfissure comprises MARK points (1) and is characterized in that: the MARK point (1) is composed of a transverse drawing line (2) and a longitudinal drawing line (3), and the transverse drawing line (2) and the longitudinal drawing line (3) are arranged in a crossed manner.
2. The novel MARK dot patterning design for improving MARK dot subfissure as claimed in claim 1, wherein: the MARK point (1) is a position identification point of a PCB applied to an automatic chip mounter in circuit board design, and the MARK point (1) is applied to a PERC superposition Selective Emitter (SE) technology.
3. The novel MARK dot patterning design for improving MARK dot subfissure as claimed in claim 1, wherein: the length of the transverse drawing line (2) is consistent with that of the longitudinal drawing line (3), and the width of the transverse drawing line (2) is consistent with that of the longitudinal drawing line (3).
4. The novel MARK point fabrication graphical design of claim 3, wherein: the diameters of the transverse drawing line (2) and the longitudinal drawing line (3) are both 1 mm.
5. The novel MARK dot patterning design for improving MARK dot subfissure as claimed in claim 1, wherein: the longitudinal drawing line (3) comprises an upper longitudinal drawing line (301), a lower longitudinal drawing line (302) and a segmentation area (303).
6. The novel MARK point fabrication graphical design of claim 5, wherein: the upper longitudinal drawing line (301) and the lower longitudinal drawing line (302) are symmetrically arranged by taking the segmentation area (303) as a center.
7. The novel MARK point fabrication graphical design of claim 5, wherein: the width of the segment region (303) is adapted to the width of the transverse drawing line (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210020458.8A CN114346452A (en) | 2022-01-10 | 2022-01-10 | Novel MARK point manufacturing graphic design for improving MARK point subfissure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210020458.8A CN114346452A (en) | 2022-01-10 | 2022-01-10 | Novel MARK point manufacturing graphic design for improving MARK point subfissure |
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| CN114346452A true CN114346452A (en) | 2022-04-15 |
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| CN202210020458.8A Pending CN114346452A (en) | 2022-01-10 | 2022-01-10 | Novel MARK point manufacturing graphic design for improving MARK point subfissure |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6714748B1 (en) * | 2000-01-26 | 2004-03-30 | Fujitsu Limited | Image forming apparatus, recording medium in which test-pattern image forming program is recorded, test-pattern image forming method, and skew angle calculation method |
| CN204909657U (en) * | 2015-08-26 | 2015-12-30 | 温州医科大学附属第二医院 | Vertebra posting |
| CN106544795A (en) * | 2015-11-12 | 2017-03-29 | Gmi（股份）责任有限公司 | Electrical autocontrol combined laser cuts and engraving, the embroidering system and its calibration steps |
| CN108831961A (en) * | 2018-06-22 | 2018-11-16 | 通威太阳能（安徽）有限公司 | A kind of Mark dot pattern structure and preparation method thereof convenient for laser marking |
| CN111106199A (en) * | 2019-12-30 | 2020-05-05 | 横店集团东磁股份有限公司 | Mark point pattern and preparation method thereof |
| CN111370391A (en) * | 2020-01-06 | 2020-07-03 | 横店集团东磁股份有限公司 | Novel SE Mark point pattern structure and preparation method thereof |
| CN112531041A (en) * | 2020-12-02 | 2021-03-19 | 横店集团东磁股份有限公司 | SE (selective emitter) structure pattern and manufacturing method thereof |
| CN113421874A (en) * | 2021-06-24 | 2021-09-21 | 武汉新芯集成电路制造有限公司 | Wafer assembly |
-
2022
- 2022-01-10 CN CN202210020458.8A patent/CN114346452A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6714748B1 (en) * | 2000-01-26 | 2004-03-30 | Fujitsu Limited | Image forming apparatus, recording medium in which test-pattern image forming program is recorded, test-pattern image forming method, and skew angle calculation method |
| CN204909657U (en) * | 2015-08-26 | 2015-12-30 | 温州医科大学附属第二医院 | Vertebra posting |
| CN106544795A (en) * | 2015-11-12 | 2017-03-29 | Gmi（股份）责任有限公司 | Electrical autocontrol combined laser cuts and engraving, the embroidering system and its calibration steps |
| CN108831961A (en) * | 2018-06-22 | 2018-11-16 | 通威太阳能（安徽）有限公司 | A kind of Mark dot pattern structure and preparation method thereof convenient for laser marking |
| CN111106199A (en) * | 2019-12-30 | 2020-05-05 | 横店集团东磁股份有限公司 | Mark point pattern and preparation method thereof |
| CN111370391A (en) * | 2020-01-06 | 2020-07-03 | 横店集团东磁股份有限公司 | Novel SE Mark point pattern structure and preparation method thereof |
| CN112531041A (en) * | 2020-12-02 | 2021-03-19 | 横店集团东磁股份有限公司 | SE (selective emitter) structure pattern and manufacturing method thereof |
| CN113421874A (en) * | 2021-06-24 | 2021-09-21 | 武汉新芯集成电路制造有限公司 | Wafer assembly |
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Application publication date: 20220415 |
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