CN114337318A - 高密度功率模块 - Google Patents
高密度功率模块 Download PDFInfo
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- CN114337318A CN114337318A CN202111116943.7A CN202111116943A CN114337318A CN 114337318 A CN114337318 A CN 114337318A CN 202111116943 A CN202111116943 A CN 202111116943A CN 114337318 A CN114337318 A CN 114337318A
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- power module
- terminal
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- capacitor
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Abstract
提供了用于功率模块的方法和系统。在一个示例中,功率模块可以具有半桥配置,其具有布置在功率模块的相对侧的电气端子、布置在印刷电路板(PCB)中的半导体芯片、电耦合到电气端子并且布置在功率模块的顶板上方并与之接触的电容器、以及一个或多个连接器,这些连接器耦合到PCB以将功率模块耦合到外部电路。可通过在半导体芯片上流动冷却剂来直接冷却功率模块。
Description
技术领域
本描述一般涉及用于功率模块的方法和系统。
背景技术和发明内容
功率模块可被用于各种应用,包括功率转换装备、电动车辆的充电器、不间断电源(UPS)等。具体而言,功率模块可为逆变器组装件中的功率组件(如半导体)提供物理包容(containment)。逆变器组装件可以是电动车辆的关键组件,被配置成将车辆电池的DC功率转换成与车辆电机兼容的AC功率。因而,功率模块的功率密度可能影响依赖逆变器组装件供电的电机的性能。
逆变器组装件的功率密度可取决于功率模块的封装方式,诸如耦合到逆变器组装件的子组件。逆变器组装件可包括多个子组件(包括逆变器组装件内的功率模块),每一子组件具有约束子组件的布置的个体足迹(footprint)。目前,子组件配置几乎没有变化是可用的,并且因此为增加功率密度而对逆变器组装件封装进行修改可能不容易实现。功率模块的功率密度可以通过开关损耗而被进一步降低,开关损耗可能由功率模块和DC链路电容器的机械结构以及功率模块和DC链路电容器之间的连接配置引起。
虽然功率密度可以通过半导体数量来增加,但半导体芯片的成本可能会阻止增加功率模块中的半导体芯片数量以抵消功率损耗。同样,使用诸如碳化硅(SiC)或氮化镓(GaN)之类的宽带隙材料可能会提高开关速度,但在过滤电磁干扰(EMI)以降低电噪声方面可能存在挑战。
在一个示例中,上述问题可通过半桥功率模块来解决,该半桥功率模块包括:布置在所述功率模块的第一侧的第一端子和布置在所述功率模块的第二、相对侧的第二端子;多个半导体芯片,其沿与第一印刷电路板(PCB)的平面平行的第一轴被布置在所述第一PCB中在所述第一端子和所述第二端子之间,并且沿垂直于所述第一轴的第二轴在顶板和底板之间;第一电容器,其电耦合到所述第一端子和所述第二端子中的每一者,并且相对于所述第二轴布置在所述顶板上方并且与所述顶板接触;以及一个或多个连接器,其耦合到所述第一PCB并被配置成将所述半桥功率模块电耦合到所述半桥功率模块外部的电路,其中,所述半桥功率模块通过耦合到附加半桥功率模块以形成具有一个或多个相输出的多相功率模块而被配置成是可伸缩的。以此方式,功率模块的功率密度可被增加。
作为一个示例,多个半导体芯片相对于彼此以及相对于功率模块的相输出母线和散热器的布置可以降低功率模块的寄生电容,同时允许功率模块具有模块化能力。例如,可以组合一个以上功率模块以形成多相功率模块。此外,功率模块功率组件彼此接近允许高频电流回路遵循缩短的路径,从而进一步有助于降低寄生电容。在一些示例中,冷却剂可被从第一端子到第二端子路由穿过功率模块,各端子布置在功率模块的相对侧,跨过多个半导体以直接冷却该多个半导体芯片以及其他组件,从而延长功率模块的使用寿命并降低成本。
应该理解,提供以上概述以通过简化形式介绍以下详细描述中进一步描述的一些概念。这并不旨在标识所要求保护主题的关键或必要特征,所要求保护主题的范围由具体实施方式之后的权利要求书来唯一地限定。此外,所要求保护的主题不限于解决在上述或本发明的任一部分中提及的任何缺点的实现。
附图说明
图1示出了其中可包括与功率模块相适应的逆变器的车辆推进系统的示例。
图2示出了具有半桥配置和集成子组件的功率模块的示例的第一透视图。
图3示出了移除电容器的图1的功率模块的第二透视图。
图4示出了移除电容器和顶板的功率模块的第三透视图。
图5示出了移除电容器和顶板的功率模块的俯视图。
图6示出了移除电容器和EMI电容器的功率模块的后视图。
图2-6大致按比例显示,但可以使用其他相对尺寸。
具体实施方式
以下描述一般涉及用于功率模块的系统和方法。功率模块可包括在逆变器中,该逆变器可被用于例如提供AC-DC转换。举例而言,逆变器可被定位在车辆中在电池和牵引电机之间,以将电池提供的DC功率转换成在牵引电机处使用的AC功率。车辆的示意图在图1中示出。功率模块可具有半桥配置,并包括逆变器组装件子组件的集成,这些子组件本来将是功率模块外部的单独组件。通过集成子组件,可减轻因包括诸单独子组件而施加的严重封装限制。功率模块的示例在图2-6中解说,示出了包括图2中的DC链路电容器的完整组诸件。图3-6中省略了DC链路电容器,且图3和图4中移除了功率模块的顶板,以提供包括在功率模块中的半导体芯片的视图。此外,出于说明目的,图6中省略了EMI电容器。
图2-6示出了具有各种部件的相对定位的示例配置。如果被示为彼此直接接触或直接耦合,则这些元件可以至少在一个示例中被分别称为直接接触或直接耦合。类似地,彼此相连或相邻的所示元件可以至少在一个示例中是分别彼此相连或相邻的。作为示例,彼此共享面接触的部件可称为共享面接触。作为另一示例,彼此隔开且之间只有空间而没有其他部件的元件在至少一个示例中可被称为如此。作为又一示例,被示为在彼此上方/下方、在彼此相对侧、或在彼此左侧/右侧的元件可被称为相对于彼此如此。此外,如在各附图中示出的,在至少一个示例中,最上面的元件或元件点可被称为部件的“顶”并且最下面的元件或元件点可被称为部件的“底”。如此处所使用的,顶/底、上/下、上方/下方可以相对于附图的垂直轴并被用来描述各附图中的元件相对于彼此的定位。由此,被示为在其他元件上方的元件在一个示例中被垂直定位在其他元件的上方。在又一示例中,各附图内所描绘的元件的形状可被称为具有这些形状(例如,诸如是圆形的、直的、平面的、弯曲的、圆角的、倒角的、成角度的,等等)此外,被示为彼此交叉的元件在至少一个示例中可被称为交叉元件或彼此交叉。此外,被示为在另一元件内或被示为在另一元件外的元件在一个示例中可被称为如此。
逆变器可包括配置成将电流从一种形式转换成另一种形式的功率模块。例如,功率模块可启用DC到AC转换,以允许车辆电池提供的功率推动车辆的电机。增加功率模块的功率密度可允许逆变器更高效地运行,从而提高电机性能。然而,功率模块的容量的增强可受到功率模块的用于适应逆变器的子组件的几何形状的封装的限制。子组件可被布置在功率模块外部,并且缺乏改变子组件几何形状的能力可导致用于优化功率模块的布置以增加功率模块的功率密度的选项很少。例如,功率模块和栅极驱动电路之间以及功率模块和电流传感器电路之间的连接布置(其中栅极驱动和电流传感器电路的定位往往受到约束)可影响功率模块的功率容量。
此外,由功率模块的半导体芯片提供的输出功率可影响功率模块的总功率密度。输出功率可因由功率模块的机械结构和耦合到功率模块的DC链路电容器引起的开关损耗而降低。功率模块和DC链路电容器之间的连接可导致开关寄生电感的大部分杂散电感值。通过减少开关损耗,半导体的功率输出可以最大化。
另外,在功率模块的半导体芯片中包括宽带隙材料(诸如SiC和GaN)导致EMI的问题。例如,电噪声可由在功率模块的相输出和散热器之间的连接(包括芯片)中生成的寄生电容引起。增加半导体芯片和散热器之间的距离可以降低寄生电容,但是也可以增加由于布置在半导体芯片和散热器之间的绝缘而产生的热阻。为了优化功率模块组件的热性能,将半导体芯片和散热器布置得尽可能靠近并且横跨尽可能宽的表面积可以是合需的。热阻和寄生电容之间的平衡可需要制定用于充分有效的缓解的新策略。此外,宽带隙半导体芯片可能容易发生高电压瞬变,当高电压瞬变被施加到寄生电容时,可在逆变器组装件的机架中生成可加剧EMI的电流。
为了至少部分地解决上述问题,逆变器可以采用具有半桥配置的功率模块,该半桥配置在增加功率模块的功率密度的同时降低寄生电容。更具体而言,功率模块可包括逆变器的通常布置在功率模块外部的至少部分子组件。由于功率模块的电容器和半导体芯片之间的连接的几何形状,在开关期间可优化总高频回路,从而提供从电容器到半导体芯片的短、线性路径。功率模块的DC端子可被配置成允许各种组件耦合到端子以形成稳健的DC链路连接。功率模块的结构进一步为功率模块提供模块化能力,从而允许在不更改功率模块的布局的情况下改变半导体芯片的数量和尺寸,以及允许多个功率模块相链接以形成多相功率模块。另外,功率模块可与各种各样的底板冷却方法兼容。此外,可以使用非导电冷却剂直接冷却功率模块,从而提供更快速且有效的发热功率模块组件的冷却,并延长功率模块的使用寿命。下面参考图2-6示出功率模块的进一步细节。
现在转到图1,车辆10的示例可包括可驱动地耦合到变速箱14的引擎12(例如,内燃机)。变速箱的输出通过传动轴16与轮轴组装件100可驱动地连接。在图1的示例中,轮轴组装件100被描绘为后轮轴组装件,但在其他示例中,可替代地配置成前轮轴组装件或串联轮轴对中的一个。
轮轴组装件100可被包括在全轮驱动、全电动、混合电动等之中,其中车辆10的前轮轴20可由引擎12驱动,后轮轴22包括轮轴组装件100,如图1所示。然而,在其他示例中,轮轴组装件100可以改为耦合到前轮轴20,而后轮轴22由引擎12驱动,或者前轮轴20和后轮轴22这两者都可以耦合到轮轴组装件100(例如,车辆10具有一个以上轮轴组装件)。
在一个示例中,轮轴组装件100可被用在集成驱动系统中。因此,轮轴组装件100可耦合至电动机102,电动机102经由逆变器106耦合至功率源104。功率源104可以是电池104,且当电动机102被用于驱动车辆10时,逆变器106可以将DC转换成AC。在一些示例中,当车辆速度降低并且电动机102被配置成电动机-发电机时,逆变器106还可以将AC转换成DC。尽管逆变器106被描绘成在电池104和电动机102之间提供功率转换,但将明白,图1的示例是非限制性示例。逆变器106可被用于将来自电池104的电流转换成依赖AC功率的各种其他电气组件,而不脱离本公开的范围。例如,在空调压缩机处消耗、输送到车辆功率插座等之前,电池功率可由逆变器106转换成AC。
逆变器(例如图1的逆变器106)可包括封装开关组件以促进DC到AC的转换的功率模块。为了增加逆变器的封装灵活性、可伸缩性、与功率范围的兼容性和功率密度,逆变器可以采用如图2-6所示的功率模块200。更具体而言,功率模块200可以具有半桥配置。
功率模块200在图2中示出,包括电容器202,但在图3-6中省略了电容器202。另外,在图4和图5中省略了功率模块200的顶板204。提供一组参考轴201(其指示y轴、x轴和z轴)以用于所示视图之间的比较。
电容器202可以是相对于y轴布置在功率模块的其他功率组件上方的矩形长方体,例如电容器202形成功率模块的上部。更具体而言,电容器202可以是DC链路电容器202,其被配置成稳定DC电压并降低波动,特别是在大电流应用期间。DC链路电容器202可包括由各种导电材料(诸如电解质、薄膜、金属等)形成的导体和由非导电材料(诸如玻璃、陶瓷、塑料膜、空气等)形成的电介质。DC链路电容器202的宽度206,如沿x轴定义且在图2中示出,可以类似于功率模块200的第一端子208(在一个示例中可以是负端子208)和第二端子210(可以是正端子210)之间的距离,其中第一和第二端子208、210布置在功率模块200的相对侧。如此,DC链路电容器202可以安装在从负端子208沿y轴向上延伸的负端子引脚212和从正端子210向上延伸的正端子引脚214之间。DC链路电容器202与负端子208和正端子210两者接触。
负端子208和正端子210可各自包括垂直(相对于y轴)插座,以分别容纳负端子引脚212和正端子引脚214。另选地,DC链路电容器202可以改为包括被配置成插入到负端子208和正端子210的插座中的引脚(替换负端子引脚212和正端子引脚214),以使DC链路电容器202能够安全地耦合到功率模块200。使端子与插座适配可以扩展功率模块200的DC连接性选项,从而启用与不同类型DC链路的耦合。例如,负端子引脚212和正端子引脚214可以插入各自的插座中(如图2-6所示),并且印刷电路板(PCB)可以经由引脚耦合到功率模块200。在又一示例中,层压母线可耦合到引脚。另外,其他示例可包括上述耦合的组合。
DC链路电容器202可以位于顶板204的顶部,使得DC链路电容器202的下边缘216与顶板204的上表面接触,其中对顶部和底部的参考是相对于y轴的。顶板204可以是矩形的,并且由非导电材料(诸如陶瓷)形成。顶板204的宽度,如沿x轴定义的,可以类似于功率模块200的宽度502,如图5所示的宽度502。孔218可布置在顶板204的相对侧,并可延伸穿过顶板204的整个厚度,该厚度沿y轴定义。孔218可与负端子引脚212和正端子引脚214对齐,以允许端子引脚插入穿过顶板204的孔218。负端子引脚212、正端子引脚214和孔218可以都具有类似的直径。
如图6所示,负和正端子引脚212、214中的每一者都可以具有基底部分602,该基底部分602具有比基底部分602上方的相应端子引脚的一部分更宽的直径。顶板204可以位于每个负和正端子引脚212、214的基座部分602的顶部,以便顶板204悬在布置在公共平面中的功率模块组件(包括半导体芯片220和印刷电路板(PCB)222,以及将半导体芯片220连接到PCB 222的线键合224)的上方。如图3所示,顶板204不接触功率模块200的除了负端子引脚212和正端子引脚214以外的任何其他组件。
顶板204和半导体芯片220之间沿y轴定义的空间可被优化,以降低PCB222中的寄生电感。例如,如图6所示,顶板204的底表面和半导体芯片220的顶表面(其可等效于PCB222的顶表面)之间的距离601可被最小化,同时维持顶板204和半导体芯片220间隔开,例如不接触。通过将顶板204定位得尽可能靠近半导体芯片220,DC链路电容器202也可以布置成紧靠半导体芯片220,从而减少在DC链路电容器202和半导体芯片220之间的高频电流回路的长度,如图6所示并在下文中进一步描述,并降低开关损耗。
半导体芯片220可以是成对布置并嵌入在PCB 222中的矩形板。各对半导体芯片220可以按平行于z轴的两列来并排布置并且彼此间隔开,这两列延伸跨越功率模块的长度504的大部分,如图5所示的长度504。这两列包括靠近负端子208的第一列226和靠近正端子210的第二列228。每列可以形成功率模块200的半桥配置的开关。半导体芯片220的第一列226和第二列228可以由PCB 222的第一层230和第二层232中的每一者的各部分来分开。通过在公共平面中将半导体芯片220布置成各列,每列中的半导体芯片220之间的距离被最小化。半导体芯片220之间的经减小的距离允许降低功率模块200的杂散电感,并且使得能够优化电流共享和热耦合。减小芯片之间的间距可进一步有助于降低功率模块200中的寄生电容。
如图2-6所示的半导体芯片220的布局可使半导体芯片220的数量能够改变,而无需改变功率模块200的总长度504或更改半导体芯片220的布局。此外,芯片的尺寸(例如,沿z轴和x轴的尺寸)可以在不修改芯片布置的功率模块长度的情况下增加或减少。因此,可以在功率模块200中使用各种芯片尺寸和数量,从而在平衡功率和成本需求方面提供增加的灵活性。
在一个示例中,半导体芯片220可由诸如SiC或GaN之类的宽带隙材料形成。与传统半导体材料相比,并入宽带隙材料允许更快的开关、更小的芯片尺寸,并且因此允许更小且更轻的功率模块占地面积,以及允许在更高的温度、电压和频率下工作。结果,功率模块200可以以经提高的效率运行。因此,宽带隙材料的更高成本可很容易被宽带隙半导体并入功率电子装置所带来的益处所抵消。
图2-6所示的半导体芯片220可以是具有本征体二极管的金属氧化物硅场效应晶体管(Mosfet)SiC芯片。然而,在其他示例中,芯片Mosfet由其他材料、绝缘栅双极晶体管(IGBT)或外部续流(freewheeling)二极管形成。同样,其他示例可包括将半导体芯片220和相关联的连接(例如线键合224)集成在功率PCB中。图2-6所示的PCB 222也可以包括在功率PCB中。在又一示例中,在此所述的半导体芯片220、线键合224和其他功率模块组件可耦合到通过诸如烧结或焊接等技术连接到陶瓷基底的直接键合铜(DBC)基板。陶瓷基底可以附连到冷却底板(例如,图2-6所示的冷却底板246),并且附连到DBC的功率模块的堆叠层可以至少部分地以薄层印刷。
PCB 222的第一层230和第二层232各自可以是PCB 222的导电层,由导电材料(诸如铜)形成并沿y轴堆叠,其中第一层230布置在第二层232上方,如图6所示。沿x-z平面,如图5所示,这两部分可具有不同的几何形状。第一层230和第二层232可通过一层非导电材料(诸如粘合剂、环氧树脂、玻璃等)彼此电绝缘,并层压在一起以形成堆叠。
如图4和5所示,第一层230可由单个、单一导电材料片形成,具有沿z轴延伸的两个经连接的列231。在功率模块200的前侧234处,PCB 222的第一层230直接耦合到栅极驱动连接器236。例如,栅极驱动连接器236可以通过焊接附连到PCB 222的第一层230。栅极驱动连接器236可以是配置成接收栅极驱动电路的公配件的母配件。栅极驱动电路可以是包括在布置在功率模块200外部的逆变器中的系统。半导体芯片220处的开关可由栅极驱动电路驱动,该栅极驱动电路可使用例如由栅极驱动电路提供并通过栅极输出级传送到半导体芯片220的电压的开环控制。如此,栅极驱动电路的至少一部分,例如栅极驱动连接器236,可以集成到功率模块200中,而不是使用不同的分布式引脚焊接到栅极驱动电路的PCB。
电缆238可以从PCB 222的第一层230的边缘延伸,并且可被包括在电流传感器电路中。在一个示例中,电缆238可以是配置成连接到基于高密度霍尔效应的电流传感器的柔性PCB。然而,已经设想了其他类型的电流传感器。电缆238可包括配件240,以允许电缆238耦合到直接附连到电流传感器的另一电缆上的对应配件。换言之,电流传感器电路(包括电流传感器)的一部分被布置在功率模块200的外部。因此,电缆238将PCB 222电耦合到电流传感器,从而使得能够监测电流。例如,电流传感器可以是相电流传感器,其被配置成测量功率模块200的相输出(例如,相输出母线248)处的电流。通过将电缆238直接耦合到PCB222的第一层230,电流传感器电路的至少一部分集成到功率模块200中,而不是实现为孤立电路。例如,传统电流传感器电路可以是具有用于电流感测的较低电压电路的串联分流电阻器,其与功率模块200完全分离。通过将电流传感器电路的至少一部分并入功率模块200,减小了电流传感器电路的占地面积。
通过将栅极驱动电路和电流传感器电路的至少部分集成到功率模块200中,功率模块200的缩放不受外部子组件(例如,不包括在功率模块200中的栅极驱动电路和电流传感器电路的组件)的几何结构的抑制。移除围绕功率模块200的逆变器子组件施加的约束可启用功率模块配置中的更大灵活性。例如,功率模块200可以链接到额外的半桥功率模块,从而共享公共底板以形成三相(例如,六块模块)或多相功率模块。换言之,功率模块200可以具有模块化能力,从而使得能够调整功率模块200的尺寸、功率密度和功率输出。此外,如上所述,功率模块200可被适配于其他类型的半导体,诸如Mosfet、SiC Mosfet、IGBT以及外部二极管,从而使得能够根据需要来调整功率模块200的成本。
虽然栅极驱动电路和电流传感器电路的连接被示为集成到功率模块200中,但是将明白,所示的关于集成子组件的功率模块的配置是非限制性示例。其他示例可包括集成其他类型的子组件和子组件连接器,诸如用于供电电路、隔离器、电压测量或其他低压应用。已设想了连接器的尺寸、数量和类型的变化。
在功率模块200的后侧242处,PCB 222的第一层230可包括允许穿过其插入底板连接302中的开口,如图3-6所示。底板连接302可以是例如压装连接器、螺栓或某种其他类型的紧固机构,从而将PCB 222固定到冷却底板246。DC链路电容器202也可以在底板连接302处附连到功率模块200。如图6所示,冷却底板246可包括垫片603,垫片603与底板连接302对齐并配置成接收底板连接302的紧固装置。垫片603可与PCB 222直接接触。功率模块200可以被布置成使得绝缘层244相对于y轴堆叠在PCB 222和冷却底板246之间。
绝缘层244可以是一层电绝缘层,诸如环氧树脂、玻璃、陶瓷等,其被配置成在半导体芯片220和冷却底板246之间提供电屏障。沿y轴定义的绝缘层244的厚度可优化为尽可能小,同时提供足够的电绝缘。通过使绝缘层244的厚度最小化,半导体芯片220和冷却底板246之间的距离可以保持很小,从而降低功率模块200中生成的寄生电容。
尽管绝缘层244不导电,但绝缘层244可被配置成允许热传递。如此,在半导体芯片220和PCB 222以及其他功率模块组件处生成的热可以通过绝缘层244从这些组件中提取到冷却底板246中。换言之,冷却底板246是通过提供可散热的大面积来辅助功率模块200的热管理的散热器。冷却底板246可以由多种导热金属(诸如铜或铝)形成,并且可以利用不同的冷却技术模式,包括具有热界面材料的扁平底座、针翅、封闭的冷却液(liquid-to-cooling)板等。
与第一层230不同,PCB 222的第二层232可以不是单个单件。相反,如图4-6所示,第二层232可以具有第一分段402、第二分段404和第三分段406。第二层232的各分段可以与底板244的上表面处于共享面接触中,并且可以通过焊接或烧结层固定地耦合到底板244。如图5所示,每个分段可以彼此间隔开,以便这些分段彼此不直接接触。各分段各自延伸跨越功率模块200的长度504的至少一部分。
第一分段402可以是位于负端子208附近并与负端子208接触的最窄分段,其中诸分段的宽度是沿x轴定义的,如图6所示。第二分段404位于第一分段402和第三分段406之间,并且可以具有比第一分段402或第三分段406中的任一者更大的宽度。第二分段404也可以具有比PCB 222的第二层232的其他分段更长的长度,并且可以在功率模块200的前侧234处耦合到相输出母线248,相输出母线248在下文中进一步描述。半导体芯片220的第一列226可以嵌入在PCB 222的第二层232的第二分段404中,使得半导体芯片220和第二分段404共面。
第三分段406可位于正端子210附近并与正端子210接触。半导体芯片220的第二列228可以嵌入在PCB 222的第二层232的第三分段406中。半导体芯片220的第二列228和PCB222的第二层232的第三分段406可被布置成是共面的,并且还与PCB 222的第二层232的第一分段402和第二分段404中的每一者共面。
PCB 222的第一层230的两个经连接的列231中的一者可以相对于y轴定位在第二层232的第二分段404上方,并且第一层230的两个经连接的列231中的另一者可以堆叠(例如,沿着y轴)在第二层232的第三分段406上方。尽管第一层230和第二层232可具有布置在其间的电绝缘层,但第一层和第二层可经由半导体芯片220和线键合224来电耦合。
线键合224可以由导电金属形成,例如铝、银、铜等。或者,线键合224可以改为是铜带或柔性PCB来代替导线。
线键合224可以将半导体芯片220中的每一者的一端电耦合到PCB 222的第二层232的分段之一,并将半导体芯片220中的每一者的另一端电耦合到PCB 222的第一层230。例如,如图5所示,半导体芯片220的第一列226的第一对506可以包括将第一对506的(靠近负端子208的)端部耦合到PCB 222的第二层232的第一分段402的六个线键合224(每芯片三个)。两个线键合224(每芯片一个)可以将半导体芯片220的第一对506的(远离负端子208的)相对端部耦合到PCB 222的第一层230的各列之一。
半导体芯片220的第二列228的第二对508可以类似地包括将第二对508的远离正端子210的端部耦合到PCB 222的第二层232的第二分段404的六个线键合。两个线键合224可将第二对508的靠近正端子210的相对端部耦合到PCB 222的第一层230的经连接的列231之一。以此方式,第二层232的各分段被电耦合,从而在各分段之间(例如,在第一分段402和第二分段404之间以及在第二分段404和第三分段406之间)用线键合224桥接间隙来形成连续路径。线键合224的布置还提供第二层232到PCB 222的第一层230的电耦合,以使得电流能够通过电缆238传输到电流传感器电路。
作为示例,通过功率模块200的高频电流路径在图6中由箭头604和606指示。将明白,图6中所示的电流流动方向是出于说明目的,并且电流可以另选地在相反方向上流动。箭头604表示通过PCB 222的负端子208和正端子210之间的电流路径,箭头606表示通过DC链路电容器202的电流路径的返回部(如图2所示)。DC链路电容器202与功率模块200的耦合创建了用于电流流动的短、大且直的路线,从而在开关期间优化功率模块200的总高频回路。
半导体芯片220的开关输出可以通过相输出母线248传输到例如驱动车辆轮轴旋转的电机。相输出母线248可以与PCB 222的第二层232的第二分段404形成连续结构。例如,相输出母线248可钎焊、烧结、焊接等至PCB 222的第二层232的第二分段404,相输出母线248具有S形几何形状,使得相输出母线248的垂直部分247(例如,与y-x平面共面)从PCB222向上延伸。相输出母线248还具有水平部分249(例如,与z-x平面共面),该水平部分249通过垂直部分247悬在PCB 222上方,延伸离开PCB 222。
相输出母线248的水平部分249可以在功率模块200的前侧234处突出PCB 222的边缘、顶板204和冷却底板246。在一些示例中,相输出母线248的水平部分249可通过钎焊、超声波焊接等直接附连至电机相引线。或者,相输出母线248可被适配成支撑紧固件(例如螺钉)或某种其他附连方法,以将功率模块200电耦合到外部功率组件。如图2-6所示,相输出母线248在功率模块200中的定位允许相输出母线248紧邻半导体芯片220来放置。例如,相输出母线248可位于与第一列和第二列226、228中的每一列的端部等距的位置,并布置成尽可能靠近每一列的端部。结果,功率模块200中的寄生电容可以被进一步抑制。
功率模块200还可以包括用于EMI滤波的电容器250,如图2-5所示。电容器可以是布置在线路和接地之间的EMI Y电容器250,并且被配置成滤除共模噪声。EMI Y电容器250可位于功率模块200的后侧242处,彼此间隔开,底板连接302位于它们之间。图4和5中描绘了EMI Y电容器250的耦合。耦合可包括在每个负端子208和正端子210处的焊接孔408,用于接收从每一EMI Y电容器250延伸的电容器引线410。EMI Y电容器250的附加电容器引线412可以从EMI Y电容器250延伸到PCB 222的第一层230,并且可以通过钎焊、焊接等耦合到第一层230。
图2-6中所示的EMI Y电容器250的耦合可允许EMI Y电容器250尽可能靠近负端子208和正端子210。以此方式,使得EMI滤波能够靠近功率模块200中的噪声源(例如,半导体芯片220和半导体芯片220与冷却底板246之间的接口),从而允许通过提供到负和正端子208、210的短、高频路径来增加机架电流的局部控制。
例如,寄生电容可以在功率模块200中的导电组件(诸如相输出母线248)和冷却底板246之间生成。通过将EMI Y电容器250放置在端子附近,归因于高电压瞬变且寄生电容中流动的电流可通过EMI Y电容器250的接近而在本地被分流。
EMI Y电容器250可位于功率模块(图2-6中未示出)的外壳的外面(例如,外部),以及DC链路电容器202、负端子引脚212、正端子引脚214、相输出母线248、栅极驱动连接器236、以及EMI Y电容器250和正负端子208、210之间的耦合(例如,电容器引线410、412和对应的焊接孔408)。或者,在其他示例中,EMI Y电容器250可以集成到功率模块200的内部区域中,使得EMI Y电容器250位于外壳内部。外壳可被配置成向功率模块200的诸组件提供机械支撑,并可通过二次成型来形成。作为另一示例,外壳可以是由包裹非导电凝胶的非导电材料形成的薄壳。该非导电凝胶可提供电绝缘,并保护芯片免受恶劣环境条件的影响,例如,暴露于热、天气、碎屑等。
在一个示例中,除了由冷却底板246提供的间接冷却之外,外壳还可封闭用于直接冷却功率模块200的非导电液体或冷却剂,诸如油。如此,外壳可包括冷却端口,其可引导冷却剂流过功率模块200,如在图5和6中的箭头510所示。例如,冷却液可被引导至顶板204和半导体芯片220之间的空间(例如,如距离601所示),如图6所示。冷却液可通过靠近负端子208的入口进入功率模块200,流经功率模块200到达正端子210,并通过靠近正端子210的出口流出功率模块200。通过修改顶板204的底表面(相对于y轴)以增加湍流,可以进一步增强由冷却剂流提供的冷却。例如,顶板204的底面可适配有突出结构(诸如翅片、轨道等)。
当功率模块200被包括在多相半桥模块中时,功率模块200中的一个以上可以封装在外壳内并对齐,使得每一功率模块的相输出母线被类似地取向,例如,从外壳的同一侧突出。因此,冷却剂可在每一功率模块的底板244下方持续且顺序地流动。
功率模块200可通过向冷却底板246传热、与流经底板的冷却液进行热交换或这两者的组合来被冷却。然而,与半导体芯片220、线键合224和易于生成和/或吸收热的其他内部组件直接接触的冷却剂流可提供更快速和有效的热管理。通过冷却剂直接冷却还可以排除由半导体芯片220和冷却底板246之间的绝缘层244的放置所施加的热阻问题,该热阻问题可减缓从芯片到冷却底板246的热量提取。
以此方式,半桥功率模块的功率密度可以增加。功率模块可以被封装,使得功率模块组件的操作可以基于对周围组件的接近度而被优化。通过将DC链路电容器定位在半导体芯片和功率模块的PCB上方,以将DC链路电容器尽可能靠近半导体芯片,可以使由功率模块和DC链路电容器的几何形状引起的开关损耗最小化。结果,通过功率模块和DC链路电容器的高频电流路径的长度减小,从而允许电流沿着短而直的路径流动,并且使得能够高效地提取从半导体芯片输出的功率。还可以通过将外部系统(例如栅极驱动电路和电流传感器电路)的至少一部分集成到功率模块中来增加功率密度,从而排除对外部PCB、连接器或电缆的需求。
可通过将EMI电容器置于功率模块的正和负端子附近来增强EMI滤波。功率模块的有效热管理可通过使冷却剂流过功率模块(与功率模块的发热组件直接接触)来提供。此外,功率模块的封装和结构允许在不更改功率模块的总体尺寸的情况下改变半导体芯片的数量和尺寸。功率模块可容易地适配于各种类型的半导体,并且可被配置成模块化,使得多个模块可被组合以形成多相功率模块。
使用图2-6所示的功率模块来配置逆变器的技术效果是,在功率模块中产生的寄生电感和寄生电容被缓和,同时允许功率模块组件的高效冷却。本公开还提供对半桥功率模块的支持,包括:布置在所述功率模块的第一侧的第一端子和布置在所述功率模块的第二、相对侧的第二端子;多个半导体芯片,其沿与第一印刷电路板(PCB)的平面平行的第一轴布置在所述第一PCB中在所述第一端子和所述第二端子之间,并且沿垂直于所述第一轴的第二轴在顶板和底板之间;第一电容器,其电耦合到所述第一端子和所述第二端子中的每一者,并且相对于所述第二轴布置在所述顶板上方并且与所述顶板接触;以及一个或多个连接器,其耦合到所述第一PCB并被配置成将所述半桥功率模块电耦合到所述半桥功率模块外部的电路,其中,所述半桥功率模块通过耦合到附加半桥功率模块以形成具有一个或多个相输出的多相功率模块而被配置成是可伸缩的。在该系统的第一示例中,所述多个半导体芯片通过线键合来电耦合到所述第一PCB,并且其中所述多个半导体、所述线键合、所述第一端子和所述第二端子以及所述第一电容器形成所述半桥功率模块的高频电流回路。在该系统的第二示例中,可任选地包括第一示例,所述多个半导体芯片沿所述第二轴与所述顶板间隔开,并且冷却剂流过所述多个半导体芯片与所述顶板之间的空间,沿所述第一轴从所述第一端子跨过所述半桥功率模块到所述第二端子。在该系统的第三示例中,可任选地包括第一和第二示例,顶板由非导电材料形成且底板是配置成从所述多个半导体芯片提取热的散热器。在该系统的第四示例中,可任选地包括第一到第三示例,所述一个或多个连接器将所述半桥功率模块电耦合到栅极驱动电路、供电电路、隔离器和电压测量电路中的一者或多者。在该系统的第五示例中,可任选地包括第一到第四示例,该系统还包括:耦合至所述第一PCB的第二、柔性PCB,其中所述柔性PCB将所述半桥功率模块连接至电流传感器。在该系统的第六示例中,可任选地包括第一到第五示例,该系统还包括:耦合到所述第一端子的第二电容器和在所述半桥功率模块后侧处耦合到所述第二端子的第三电容器,其中所述第二电容器和所述第三电容器两者都是电磁干扰(EMI)Y电容器。在该系统的第七示例中,可任选地包括第一到第六示例,该系统还包括:布置在所述半桥功率模块前侧的相输出母线,其中所述相输出母线耦合到所述第一PCB。
本公开还提供对功率模块的支持,包括:两个开关,每一开关由布置在第一端子和第二端子之间的多个半导体芯片形成;DC链路电容器,其通过所述第一端子和所述第二端子电耦合到所述两个开关,所述DC链路电容器沿垂直于所述多个半导体芯片的平面的轴布置在所述多个半导体芯片的上方并与所述多个半导体芯片间隔开,其中冷却剂在所述DC链路电容器和所述多个半导体芯片之间的空间中从所述第一端子流向所述第二端子;以及耦合到所述第一端子和所述第二端子中的每一者并被配置成过滤电磁干扰的一组电容器。在该系统的第一示例中,所述多个半导体芯片沿公共平面以两列并排排列,并被嵌入在印刷电路板(PCB)中在顶板和散热器之间。在该系统的第二示例中,可任选地包括第一示例,所述多个半导体芯片与所述顶板间隔开,并与设置在所述多个半导体芯片与所述散热器之间的绝缘层处于共享面接触中。在该系统的第三示例中,可任选地包括第一和第二示例,所述功率模块外部的一个或多个电路的至少一部分被集成到所述PCB中。在该系统的第四示例中,可任选地包括第一到第三示例,所述DC链路电容器位于所述顶板的顶部,在所述顶板的与所述多个半导体的相对的一侧上,并且其中所述DC链路电容器与所述多个半导体芯片之间的空间被最小化以减小所述功率模块的寄生电容,该空间包括所述顶板和所述多个半导体芯片之间的空间。在该系统的第五示例中,可任选地包括第一到第四示例,所述DC链路电容器在所述第一端子和所述第二端子之间延伸一段距离,并且其中所述DC链路电容器与所述第一端子和所述第二端子两者接触以形成高频电流回路的返回路径。在该系统的第六示例中,可任选地包括第一到第五示例,所述第一端子包括从所述第一端子向上延伸的第一组引脚,所述第二端子包括从所述第二端子向上延伸的第二组引脚,所述第一组引脚和所述第二组引脚被配置成将所述功率模块耦合到不同类型的DC链路。在该系统的第七示例中,可任选地包括第一到第六示例,所述第一端子和所述第二端子包括配置成接收所述一组电容器的引线的焊孔,并且其中所述一组电容器沿所述功率模块的后侧来布置。在该系统的第八示例中,可任选地包括第一到第七示例,所述功率模块被配置成耦合到一个或多个附加功率模块以形成多相功率模块,并且其中所述多相功率模块可具有公共的共享散热器。
本公开还提供对半桥功率模块的支持,包括:封闭在外壳中的第一组组件以及所述外壳外部的第二组组件,第一组组件包括:布置在公共平面中且嵌入在印刷电路板(PCB)中的多个半导体芯片,配置成提供到所述半桥功率模块的DC连接性并且电耦合到所述多个半导体芯片的电容器,配置成使冷却剂在所述多个半导体芯片和所述电容器之间流动的、穿过所述半桥功率模块的通路,第二组组件包括:电耦合到所述多个半导体芯片的相输出母线,定位在所述半桥功率模块的相对侧处且电耦合到所述多个半导体芯片的电气端子,耦合到所述电气端子的一组电磁干扰(EMI)电容器,以及耦合到所述PCB且被配置成提供到所述半桥功率模块外部的电路的电连接性的连接器。在该系统的第一示例中,该系统还包括:顶板,绝缘层,以及封闭在外壳内的冷却底板,并且其中电容器、顶板、PCB、绝缘层和冷却底板沿垂直于顶板的平面的方向来堆叠并被配置成至少部分地通过印刷来形成。在该系统的第二示例中,可任选地包括第一示例,外壳包括使冷却剂在顶板和PCB之间的空间中流过半桥功率模块的冷却端口。
所附权利要求书特别指出了被认为是新颖的且非显而易见的某些组合和子组合。这些权利要求可以指“一”元件或“第一”元件或其等价物。这样的权利要求应被理解为包括一个或多个这样的元件的结合,既不是必需也不是排除两个或更多个这样的元件。所公开的特征、功能、元件和/或属性的其他组合和子组合可通过修改本权利要求书或通过在本申请或相关申请中提出新权利要求来要求保护。无论范围比原始权利要求更宽、更窄、等同还是不同的这些权利要求也被认为被包括在本公开的主题内。
Claims (15)
1.一种半桥功率模块,包括:
布置在所述功率模块的第一侧的第一端子和布置在所述功率模块的第二、相对侧的第二端子;
多个半导体芯片,其沿与第一印刷电路板(PCB)的平面平行的第一轴布置在所述第一PCB中在所述第一端子和所述第二端子之间,并且沿垂直于所述第一轴的第二轴在顶板和底板之间;
第一电容器,其电耦合到所述第一端子和所述第二端子中的每一者,并且相对于所述第二轴布置在所述顶板上方并且与所述顶板接触;以及
一个或多个连接器,其耦合到所述第一PCB并被配置成将所述半桥功率模块电耦合到所述半桥功率模块外部的电路;
其中,所述半桥功率模块通过耦合到附加半桥功率模块以形成具有一个或多个相输出的多相功率模块而被配置成是可伸缩的。
2.根据权利要求1所述的半桥功率模块,其特征在于,所述多个半导体芯片通过线键合来电耦合到所述第一PCB,并且其中所述多个半导体、所述线键合、所述第一端子和所述第二端子以及所述第一电容器形成所述半桥功率模块的高频电流回路。
3.根据权利要求1所述的半桥功率模块,其特征在于,所述多个半导体芯片沿所述第二轴与所述顶板间隔开,并且冷却剂流过所述多个半导体芯片与所述顶板之间的空间,沿所述第一轴从所述第一端子跨过所述半桥功率模块到所述第二端子。
4.根据权利要求1所述的半桥功率模块,其特征在于,所述顶板由非导电材料形成,且所述底板是配置成从所述多个半导体芯片提取热量的散热器。
5.根据权利要求1所述的半桥功率模块,其特征在于,所述一个或多个连接器将所述半桥功率模块电耦合到栅极驱动电路、供电电路、隔离器和电压测量电路中的一者或多者。
6.根据权利要求1所述的半桥功率模块,其特征在于,还包括耦合至所述第一PCB的第二、柔性PCB,其中所述柔性PCB将所述半桥功率模块连接至电流传感器。
7.根据权利要求1所述的半桥功率模块,其特征在于,还包括耦合到所述第一端子的第二电容器和在所述半桥功率模块后侧处耦合到所述第二端子的第三电容器,其中所述第二电容器和所述第三电容器两者都是电磁干扰(EMI)Y电容器。
8.根据权利要求1所述的半桥功率模块,其特征在于,还包括布置在所述半桥功率模块前侧的相输出母线,其中所述相输出母线耦合到所述第一PCB。
9.一种用于功率模块的方法,包括:
操作所述功率模块,该模块包括两个开关,每一开关由布置在第一端子和第二端子之间的多个半导体芯片形成;
DC链路电容器,其通过所述第一端子和所述第二端子电耦合到所述两个开关,所述DC链路电容器沿垂直于所述多个半导体芯片的平面的轴布置在所述多个半导体芯片的上方并与所述多个半导体芯片间隔开,其中冷却剂在所述DC链路电容器和所述多个半导体芯片之间的空间中从所述第一端子流向所述第二端子;和
耦合到所述第一端子和所述第二端子中的每一者并被配置成过滤电磁干扰的一组电容器。
10.根据权利要求9所述的方法,其特征在于,所述多个半导体芯片沿公共平面以两列并排排列,并被嵌入在印刷电路板(PCB)中在顶板和散热器之间。
11.根据权利要求10所述的方法,其特征在于,所述多个半导体芯片与所述顶板间隔开,并与设置在所述多个半导体芯片与所述散热器之间的绝缘层处于共享面接触中。
12.根据权利要求10所述的方法,其特征在于,所述功率模块外部的一个或多个电路的至少一部分被集成到所述PCB中。
13.根据权利要求11所述的方法,其特征在于,所述DC链路电容器位于所述顶板的顶部,在所述顶板的与所述多个半导体的相对的一侧上,并且其中所述DC链路电容器与所述多个半导体芯片之间的空间被最小化以减小所述功率模块的寄生电容,该空间包括所述顶板和所述多个半导体芯片之间的空间。
14.根据权利要求13所述的方法,其特征在于,所述DC链路电容器在所述第一端子和所述第二端子之间延伸一段距离,并且其中所述DC链路电容器与所述第一端子和所述第二端子两者都接触以形成高频电流回路的返回路径。
15.根据权利要求9所述的方法,其特征在于,所述第一端子包括从所述第一端子向上延伸的第一组引脚,所述第二端子包括从所述第二端子向上延伸的第二组引脚,所述第一组引脚和所述第二组引脚被配置成将所述功率模块耦合到不同类型的DC链路。
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