CN114335265B - Manufacturing method of near-infrared LED epitaxial structure and epitaxial structure - Google Patents
Manufacturing method of near-infrared LED epitaxial structure and epitaxial structure Download PDFInfo
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Abstract
The embodiment of the application discloses a manufacturing method of a near infrared LED epitaxial structure and the epitaxial structure, wherein the manufacturing method comprises the following steps: sequentially forming an N-type layer, a light-emitting layer, a P-type layer, a transition layer and an ohmic contact layer on the surface of the substrate, wherein the ohmic contact layer is a GaP layer, the P-type layer comprises a P-type limiting layer and a P-type window layer, and the P-type window layer is Al x Ga 1‑x An As layer; the transition layer comprises a first transition layer and a second transition layer, wherein the first transition layer is Al with the content of Al component uniformly reduced from x to 0 along the direction away from the surface of the substrate y Ga 1‑y An As layer; the second transition layer is GaAs with P component content increasing from 0 to 1 along the direction away from the substrate surface 1‑z P z The transition layer can stably realize the transition from the lattice of the P-type window layer to the ohmic contact layer and the band gap, thereby being beneficial to improving the working performance of the near infrared LED and enabling the transition layer to realize good ohmic contact with the P-type window layer and the ohmic contact layer.
Description
Technical Field
The application relates to the technical field of LEDs, in particular to a manufacturing method of a near infrared LED epitaxial structure and the near infrared LED epitaxial structure.
Background
Near infrared light, which is the earliest invisible light found by people, has received extensive attention in the 21 st century, and has been rapidly developed because of its characteristics of no destructiveness, strong penetrability, and the like, and its wide application in the fields of cameras, material analysis, remote control, detection, biomedical treatment, and the like.
The near infrared LED epitaxial structure generally takes GaAs material As a substrate, and the main structure is an As-based material taking AlGaAs material As a main material. It is known that the lattice constants of AlGaAs material and GaAs material are substantially identical, so that AlGaAs material and GaAs material have a good lattice matching degree, but AlGaAs material is not suitable as a surface ohmic contact layer due to its relatively active chemical nature, and GaP material is generally used as a surface ohmic contact layer.
However, alGaAs materials and GaP materials have a large lattice mismatch and bandgap dislocation, i.e., a large lattice mismatch and bandgap dislocation exists between the window layer and the ohmic contact layer, which affects the operation performance of the near infrared LED. Therefore, the method for manufacturing the near-infrared LED epitaxial structure is provided, so that transition between crystal lattices and band gaps between the window layer and the ohmic contact layer is realized well, and the method becomes a research focus of a person skilled in the art.
Disclosure of Invention
In order to solve the technical problems, the embodiment of the application provides a manufacturing method of a near-infrared LED epitaxial structure, and the near-infrared LED epitaxial structure manufactured by the manufacturing method is provided with a transition layer with uniform transition of crystal lattices and energy bands, and the transition layer can realize the transition of the crystal lattices and the band gaps between a window layer and an ohmic contact layer relatively stably, so that the working performance of the near-infrared LED is improved.
In order to solve the above problems, the embodiment of the present application provides the following technical solutions:
a manufacturing method of a near infrared LED epitaxial structure comprises the following steps:
providing a substrate;
sequentially forming an N-type layer, a light-emitting layer and a P-type layer on one side of the substrate surface, which is away from the substrate surface, wherein the P-type layer comprises a P-type limiting layer and a P-type window layer which are sequentially arranged on one side of the substrate surface, and the P-type window layer is Al x Ga 1-x As layer, 0.1<x<0.5；
Forming a transition layer on one side of the P-type layer away from the surface of the substrate, wherein forming the transition layer comprises:
forming a first transition layer on one side of the P-type layer, which is far away from the surface of the substrate, wherein the first transition layer is Al y Ga 1- y An As layer, wherein y is more than or equal to 0 and less than or equal to x, and the content of Al component in the first transition layer is uniformly reduced from x to 0 along the direction deviating from the surface of the substrate;
Forming a second transition layer on one side of the first transition layer, which is far away from the surface of the substrate, wherein the second transition layer is GaAs 1-z P z And a layer, z is more than or equal to 0 and less than or equal to 1, wherein forming the second transition layer comprises:
controlling the growth speed of the second transition layer according to the value of P/(P+As), forming the second transition layer on one side of the first transition layer, which is far away from the surface of the substrate, wherein the content of P component in the second transition layer is uniformly increased from 0 to 1 along the direction, which is far away from the surface of the substrate, wherein a reaction source for forming the second transition layer comprises phosphane and arsine, and P/(P+As) is the proportion of the phosphane content in the reaction source to the sum of the phosphane content and the arsine content;
and forming an ohmic contact layer on one side of the transition layer, which is away from the surface of the substrate, wherein the ohmic contact layer is a GaP layer.
Optionally, controlling the growth speed of the second transition layer according to the value of P/(p+as), and forming the second transition layer on the side of the first transition layer facing away from the substrate surface includes:
the value of P/(P+As) is smaller than a first preset value, and the growth speed of the second transition layer is controlled to be reduced from the first growth speed to the second growth speed at a uniform speed within a first preset time, so that a first sub-transition layer is formed;
The value of P/(P+As) is between the first preset value and a second preset value, wherein the value comprises an endpoint value, the growth speed of the second transition layer is controlled to be the second growth speed in a second preset time, and a second sub-transition layer is formed on one side of the first sub-transition layer, which is far away from the surface of the substrate;
the value of P/(P+As) is larger than a second preset value, the growth speed of the second transition layer is controlled to be increased from the second growth speed to a third growth speed at a constant speed in a third preset time, and a third sub-transition layer is formed on one side of the second sub-transition layer, which is away from the surface of the substrate;
wherein the first preset value is 0.2, the second preset value is 0.7, and the range of the first growth speed isThe value of the second growth speed is in the range of +.>The value range of the third growth speed is +.>And the thickness of the first sub-transition layer is 10-15 nm, the thickness of the second sub-transition layer is 5-15 nm, and the thickness of the third sub-transition layer is 5-15 nm.
Optionally, the method further comprises:
forming a buffer layer on the surface of the substrate before forming the N-type layer, the light-emitting layer, the P-type layer, the transition layer and the ohmic contact layer on the surface of the substrate, wherein the buffer layer covers the surface of the substrate;
The buffer layer is a GaAs layer, and the thickness of the buffer layer ranges from 200nm to 1000nm.
A near infrared LED epitaxial structure, the epitaxial structure comprising:
a substrate;
the light-emitting device comprises a substrate, an N-type layer, a light-emitting layer and a P-type layer, wherein the N-type layer, the light-emitting layer and the P-type layer are arranged on the surface of the substrate in sequence along one side away from the surface of the substrate, the P-type layer comprises a P-type limiting layer and a P-type window layer which are arranged on one side of the surface of the substrate in sequence, and the P-type window layer is Al x Ga 1-x As layer, 0.1<x<0.5；
The transition layer is positioned on one side of the P-type layer away from the surface of the substrate and comprises a first transition layer and a second transition layer, wherein the first transition layer is Al y Ga 1-y The layer of As is formed of an As,the content of Al component in the first transition layer is uniformly reduced from x to 0 along the direction away from the surface of the substrate, and the second transition layer is GaAs 1-z P z Z is more than or equal to 0 and less than or equal to 1, and the content of the P component in the second transition layer uniformly increases from 0 to 1 along the direction away from the surface of the substrate;
and the ohmic contact layer is positioned on one side of the transition layer, which is away from the surface of the substrate, and is a GaP layer.
Optionally, the thickness of the first transition layer ranges from 5nm to 10nm;
The second transition layer comprises a first sub-transition layer, a second sub-transition layer and a third sub-transition layer which are sequentially arranged along one side away from the surface of the substrate, the thickness of the first sub-transition layer ranges from 10nm to 15nm, the thickness of the second sub-transition layer ranges from 5nm to 15nm, and the thickness of the third sub-transition layer ranges from 5nm to 15nm.
Optionally, the N-type layer includes an N-type corrosion stop layer, an N-type ohmic contact layer, an N-type window layer, and an N-type limiting layer sequentially arranged along a side facing away from the surface of the substrate;
wherein the N-type corrosion cut-off layer is a GaInP layer, and the thickness range is 200 nm-500 nm; the N-type ohmic contact layer is a GaAs layer, and the thickness range is 30 nm-100 nm; the N-type window layer is Al a Ga 1-a As layer, 0.1<a<0.5, the thickness range is 5000 nm-10000 nm; the N-type limiting layer is Al b Ga 1-b As layer, 0.2<b<1.0, and a<b, the thickness range is 5000 nm-10000 nm.
Optionally, the P-type limiting layer is Al c Ga 1-c As layer, 0.2<c<1.0, and x<c, performing operation; the thickness of the P-type limiting layer is 100 nm-400 nm.
Optionally, the light emitting layer includes N light emitting units sequentially arranged along a side facing away from the surface of the substrate, N is 3-20, and the light emitting units include a quantum well layer and a quantum barrier layer sequentially arranged along a side facing away from the surface of the substrate;
The quantum well layer is an InGaAs layer, the quantum barrier layer is an AlGaAs layer, the thickness of the quantum well layer ranges from 3nm to 10nm, and the thickness of the quantum barrier layer ranges from 10nm to 30nm.
Optionally, the method further comprises:
and the buffer layer is positioned between the surface of the substrate and the N-type layer, wherein the buffer layer is a GaAs layer, and the thickness of the buffer layer is in the range of 200 nm-1000 nm.
Compared with the prior art, the technical scheme has the following advantages:
the technical scheme provided by the application comprises the following steps: providing a substrate; sequentially forming an N-type layer, a light-emitting layer, a P-type layer, a transition layer and an ohmic contact layer on the surface of the substrate, wherein the ohmic contact layer is a GaP layer, and the P-type layer comprises a P-type limiting layer and a P-type window layer, and the P-type window layer is Al x Ga 1-x An As layer; forming the transition layer includes: forming a first transition layer of Al y Ga 1-y The content of the Al component in the first transition layer is uniformly reduced from x to 0 along the direction away from the surface of the substrate, so that at the junction of the first transition layer and the P-type window layer, the lattice constants of the first transition layer and the P-type window layer are the same As the band gap, and the lattice constants and the band gap of the first transition layer are gradually changed in a stable change trend; forming the second transition layer, wherein the second transition layer is GaAs 1-z P z Forming the second transition layer includes: controlling the growth rate of the second transition layer according to the value of P/(P+As), forming the second transition layer, wherein the P component content in the second transition layer increases uniformly from 0 to 1 along the direction away from the substrate surface, so that the lattice constant and the band gap of the second transition layer are the same As those of the first transition layer at the junction of the second transition layer and the first transition layer, the lattice constant and the band gap of the second transition layer are the same As those of the ohmic contact layer at the junction of the second transition layer and the ohmic contact layer, and the second transition layerThe lattice constant and the band gap of (c) are graded with a stable variation trend.
In summary, the first transition layer can stably realize transition from the P-type window layer to the lattice and the band gap of the second transition layer, and the second transition layer can stably realize transition from the second transition layer to the lattice and the band gap of the ohmic contact layer, so that the transition layer can stably realize transition from the P-type window layer to the lattice and the band gap of the ohmic contact layer, which is conducive to improving the working performance of the near infrared LED, and enables the transition layer to realize good ohmic contact with the P-type window layer and the ohmic contact layer.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flowchart of a method for manufacturing a near infrared LED epitaxial structure according to an embodiment of the present application;
FIG. 2 is a graph showing the relationship between P content and P/(P+As) value when GaAsP is formed;
FIG. 3 is a graph of growth rate versus P/(P+As) values for a second transition layer in an epitaxial structure fabricated using the fabrication method provided in an embodiment of the present application;
fig. 4 is a schematic structural diagram of a near infrared LED epitaxial structure according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of another near infrared LED epitaxial structure according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of still another near infrared LED epitaxial structure according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the schematic drawings, wherein the cross-sectional views of the device structure are not to scale for the sake of illustration, and the schematic drawings are merely examples, which should not limit the scope of protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
As described in the background section, providing a method for manufacturing a near infrared LED epitaxial structure for better realizing lattice and band gap transition between a window layer and an ohmic contact layer becomes a research focus of those skilled in the art.
The near infrared LED epitaxial structure generally takes a GaAs material As a substrate, and takes an AlGaAs material As a main body, wherein the lattice constants of the AlGaAs material and the GaAs material are basically consistent, and are between 5.65 and 5.66, and the band gaps are between 1.42eV and 2.95eV, so that the AlGaAs material and the GaAs material have higher lattice matching degree and band gap matching degree, and good ohmic contact between the AlGaAs material and the GaAs material can be realized. However, the AlGaAs material is not suitable for the ohmic contact layer of the surface layer because the AlGaAs material has relatively active chemical properties and is easy to react, while the GaP material has relatively stable chemical properties and is not easy to react, so that the AlGaAs material is relatively suitable for the ohmic contact layer of the surface layer. Wherein an ohmic contact layer formed of GaP material is typically located over a window layer formed of AlGaAs material.
However, the lattice constant of the GaP material is 5.45, the band GaP is 2.45eV, so that the GaP material and the AlGaAs material have lattice mismatch of more than 3%, and the GaP of the GaP material and the AlGaAs material have larger deviation, that is, the GaP material and the AlGaAs material have larger GaP dislocation, so that an ohmic contact layer composed of the GaP material is directly formed on a window layer composed of the AlGaAs material, good ohmic contact cannot be realized, and lattice and GaP transition between the window layer and the ohmic contact layer is difficult to realize, so that the working performance of the near infrared LED is affected.
In general, a conventional near infrared LED epitaxial structure forms a transition layer composed of a GaInP material between a window layer and an ohmic contact layer, or forms a transition layer composed of an AlGaInP material with graded Al and In compositions between the window layer and the ohmic contact layer, for realizing lattice and band gap transition from the window layer to the ohmic contact layer. However, since the lattice constant of the GaInP material is 5.66, the band gap is 1.75eV, and the lattice constant of the AlGaInP material is 5.66, and the band gap is between 1.75eV and 2.45eV, the lattice matching degree of the transition layer formed by the GaInP material and the window layer is better, but the band gap dislocation thereof with the window layer is larger, and the lattice mismatch and the band gap dislocation thereof with the ohmic contact layer are both larger, and the lattice matching degree of the transition layer composed of the AlGaInP material with the gradual change of the Al component and the In component with the window layer is better, but the band gap dislocation thereof with the window layer is larger, and the lattice mismatch thereof with the ohmic contact layer is larger, so that the window layer and the ohmic contact layer are difficult to realize good ohmic contact through the transition layer, and the near infrared LED epitaxial structure also causes current to be poor due to the lattice mismatch and the band gap dislocation, and further causes the voltage bias and the brightness bias of the near infrared LED to influence the working performance of the near infrared LED.
In addition, in order to realize the transition between the lattice and the band GaP between the window layer and the ohmic contact layer, a gradual transition layer is formed between the window layer and the ohmic contact layer, and the gradual transition layer is directly gradually changed from AlGaAs to GaP. However, when the graded transition layer is directly graded from AlGaAs to GaP, an intermediate material AlGaAsP is involved, and As AlGaAsP is a system of three, five and five, the incorporation efficiency of As and P changes along with the change of the proportion of P/(p+as) and the change of the proportion of Al/Ga, so that the graded transition layer cannot be graded from AlGaAs to GaP in a certain stable change trend, and therefore, the graded transition layer cannot realize lattice and band GaP transition from a window layer to an ohmic contact layer relatively stably, so that the current flow of an LED epitaxial structure is not smooth, and further, the near-infrared LED voltage is higher and the brightness is lower, and the working performance of the near-infrared LED is affected.
Based on the above research, the embodiment of the application provides a method for manufacturing a near infrared LED epitaxial structure, as shown in fig. 1, the method includes:
s1: providing a substrate; the substrate is a GaAs substrate doped with Si by using a deflection angle of 2-15 degrees, wherein 100 faces are deflected to 111 faces, but the substrate is not limited to the above, and the substrate is specifically determined according to the situation; in addition, when the manufacturing method is used for manufacturing the near-infrared LED epitaxial structure, the substrate is required to be placed in an MOCVD device and then is subjected to H 2 And AsH 3 Heat treatment is carried out for 5min to 10min under the atmosphere of 700 ℃ to 750 ℃,
s2: forming an N-type layer, a light-emitting layer and a P-type layer on the surface of the substrate in sequence along one side deviating from the surface of the substrate, wherein the P-type formation comprises a P-type limiting layer and a P-type window layer which are sequentially arranged along the side deviating from the surface of the substrate, and the P-type window layer is Al x Ga 1-x As layer, 0.1<x<0.5; it should be noted that, the content of each component in the P-type window layer is not limited in the present application, and in other embodiments of the present application, the content of each component in the P-type window layer may also be other value ranges, which is specifically determined according to circumstances;
when needed, in one embodiment of the present application, forming the N-type layer includes: sequentially forming an N-type corrosion stop layer, an N-type ohmic contact layer, an N-type window layer and an N-type limiting layer on one side of the surface of the substrate, which is away from the surface of the substrate, wherein the growth temperature is 650-750 ℃, the N-type corrosion stop layer is a GaInP layer, and the thickness range is 200-500 nm, including the end point value; the N-type ohmic contact layer is GaAs layer, thickness range is 30 nm-100 nm, including end point value; the N-type window layer is AlaGa1-aAs layer, 0.1 <a<0.5, the thickness range is 5 um-10 um, including the end point value; the N-type limiting layer is Al b Ga 1-b As layer, 0.2<b<1.0, and a<And b, the thickness is 5-10 um, including the end point value. Forming the light emitting layer includes: and forming 3-20 light-emitting units on one side of the N-type layer, which is away from the surface of the substrate, wherein the growth temperature is between 650 and 750 ℃, the light-emitting units comprise quantum well layers and quantum barrier layers which are sequentially arranged along one side, which is away from the surface of the substrate, the quantum well layers are InGaAs layers, the quantum barrier layers are AlGaAs layers, the thickness of the quantum well layers is in a range of 3-10 nm, and the thickness of the quantum barrier layers is in a range of 10-30 nm, and the quantum barrier layers comprise end point values. Forming the P-type layer includes: sequentially forming a P-type limiting layer and a P-type window layer on one side of the light-emitting layer, which is far away from the surface of the substrate, wherein the growth temperature is 650-750 ℃, and the P-type limiting layer is Al c Ga 1-c As layer, 0.2<c<1.0, and x<And c, the thickness ranges from 100nm to 400nm, including the end point value. However, the component content, thickness and growth temperature of each of the N-type layer, the P-type layer and the light-emitting layer are not limited in this application, and are specifically determined according to circumstances.
On the basis of the above embodiment, in an embodiment of the present application, the manufacturing method includes:
s3: forming the transition layer on one side of the P-type layer, which is away from the surface of the substrate, comprises the following steps:
forming a first transition layer on one side of the P-type layer, which is far away from the surface of the substrate, wherein the first transition layer is Al y Ga 1- y An As layer, wherein y is greater than or equal to 0 and less than or equal to x, and the Al component content in the first transition layer uniformly decreases from x to 0 along the direction away from the substrate surface, i.e. the Al component content in the first transition layer gradually changes with a certain fixed variable along the direction away from the substrate surface, for example, the Al component content in the first transition layer sequentially changes from y along the direction away from the substrate surface 1 、y 2 、y 3 、y 4 …, then y 2 And y is 1 Is equal to y 3 And y is 2 Is the difference of y 4 And y is 3 Is equal to y 3 And y is 2 And so on;
after the first transition layer is formed, a second transition layer is formed on one side of the first transition layer, which is away from the surface of the substrate, wherein the second transition layer is GaAs 1-z P z And a layer, z is more than or equal to 0 and less than or equal to 1, wherein forming the second transition layer comprises:
according to the value of P/(P+As), controlling the growth speed of the second transition layer, forming the second transition layer on one side of the first transition layer facing away from the substrate surface, wherein the P component content in the second transition layer uniformly increases from 0 to 1 along the direction facing away from the substrate surface, i.e. the P component content in the second transition layer gradually changes with a certain fixed variable along the direction facing away from the substrate surface, for example, the P component content in the second transition layer sequentially changes from z along the direction facing away from the substrate surface 1 、z 2 、z 3 、z 4 …, z 2 And z 1 Is equal to z 3 And z 2 Is the difference, z 4 And z 3 Is equal to z 3 And z 2 And so on; wherein, the reaction source for forming the second transition layer comprises phosphane and arsine, P/(P+As) is the ratio of the phosphane content in the reaction source to the sum of the phosphane content and the arsine content, namely P/(P+As) is the reciprocal of the ratio of the sum of the phosphane content and the arsine content in the reaction source for forming the second transition layer to the phosphane content; it should be noted that, when the second transition layer is formed, the incorporation of the P component is related to the value of P/(p+as) and has a certain rule, so in the embodiment of the application, the growth speed of the second transition layer is controlled according to the value of P/(p+as), so As to control the incorporation of the P component;
s4: and after the transition layer is formed, forming an ohmic contact layer on one side of the transition layer, which is away from the surface of the substrate, wherein the ohmic contact layer is a GaP layer so as to form the near infrared LED epitaxial structure. The growth temperature of the ohmic contact layer is 550-650 ℃, and the thickness of the ohmic contact layer ranges from 20nm to 20000nm, including the end point values, but the application is not limited thereto, and is specifically determined according to the situation.
Specifically, in the embodiment of the present application, the first transition layer is Al y Ga 1-y An As layer, the content of Al component in the first transition layer is uniformly reduced from x to 0, i.e. the first transition layer is formed from Al x Ga 1-x As is uniformly transited to the transition layer of GaAs, so that the first transition layer is a transition layer which gradually changes from a tri-penta system to a tri-penta system. Typically, the near infrared LED epitaxial structure is formed using a Metal-organic chemical vapor deposition (MOCVD) apparatus, so that when the Al component content in the first transition layer is uniformly reduced from x to 0, that is, when the first transition layer is a transition layer gradually changed from a tri-to-penta system, the uniform change of the Al component in the first transition layer can be achieved by controlling the effective amount of Al input into the MOCVD reaction chamber, so that the Al component content of the first transition layer is uniformly reduced from x to 0.
The second transition layer is GaAs 1-z P z The content of P component in the second transition layer is uniformly increased from 0 to 1, namely the second transition layer is a transition layer which is uniformly transited from GaAs to GaP, namely the second transition layer is a transition layer which is gradually transited from a tri-penta system to a tri-penta system, and an intermediate transition material GaAsP is involved in the transition process, namely the second transition layer is a solid solution of GaAsP. Because GaAs and GaP belong to a III-V system, and the equilibrium coefficients of the III-V reactions have smaller differences, the distribution coefficient of the solid solution component of GaAsP is relatively close to 1, and the solid solution of GaAsP is easy to obtain. It should be noted that the solid solution of GaAsP does not include Al component, so that the incorporation efficiency of P component is not affected by the value of Al/Ga during the formation of the second transition layer, but is only related to the value of P/(p+as), and P is preferentially incorporated when the value of P/(p+as) is small or large, so that the growth rate of the second transition layer can be controlled according to the value of P/(p+as) to obtain uniform increase of P component from 0 to 1 And (3) uniformly grading the transition layer to obtain the uniformly graded transition layer with the As component uniformly reduced from 1 to 0.
Based on the foregoing embodiments, in an embodiment of the present application, the transition layer includes a first transition layer and a second transition layer, where the first transition layer is Al y Ga 1-y An As layer, wherein the content of Al component in the first transition layer is uniformly reduced from x to 0, y is more than or equal to 0 and less than or equal to x, and the window layer is Al x Ga 1-x The As layer is arranged between the P-type window layer and the second transition layer, so that the content of Al components at the side, which is contacted with the P-type window layer, of the first transition layer is the same As the content of Al components of the P-type window layer, and the material at the side, which is contacted with the P-type window layer, of the first transition layer is the same As the material of the P-type window layer, and is Al x Ga 1-x As, therefore, the lattice and the band gap of one side of the first transition layer, which is contacted with the P-type window layer, are identical to those of the P-type window layer, namely, at the junction of the first transition layer and the P-type window layer, the lattice and the band gap of the first transition layer are identical to those of the P-type window layer, meanwhile, at the junction of the first transition layer and the second transition layer, the materials of the first transition layer and the second transition layer are identical to GaAs, so that at the junction of the first transition layer and the second transition layer, the lattice and the band gap of the first transition layer are identical to those of the second transition layer, and the content of Al component in the first transition layer is uniformly reduced from x to 0, and the lattice and the band gap of the first transition layer can be prevented from being suddenly changed due to mutation of components, so that the lattice and the band gap of the first transition layer can gradually change gradually in a stable trend, and the lattice and the band gap of the first transition layer are identical to those of the first transition layer from the lattice and the second transition layer. And the junction of the first transition layer and the P-type window layer has the same lattice and band gap as those of the P-type window layer, and can also enable the first transition layer and the P-type window layer to form good ohmic contact 。
The second transition layer is GaAs 1-z P z The content of P component in the second transition layer is uniformly increased from 0 to 1 along the direction away from the surface of the substrate, the second transition layer is positioned between the first transition layer and the ohmic contact layer, so that the side, which is contacted with the first transition layer, of the second transition layer is GaAs, namely, at the junction of the first transition layer and the second transition layer, the materials of the first transition layer and the second transition layer are GaAs, and further, at the junction of the first transition layer and the second transition layer, the lattice and the band GaP of the first transition layer are the same as those of the second transition layer, and meanwhile, the side, which is contacted with the ohmic contact layer, of the second transition layer is GaP, namely, at the junction of the second transition layer and the ohmic contact layer, the second transition layer and the ohmic contact layer are GaP, so that at the junction of the second transition layer and the ohmic contact layer, the crystal lattice and the band GaP of the second transition layer are identical to those of the ohmic contact layer, the P component content in the second transition layer is uniformly increased from 0 to 1 along the direction away from the surface of the substrate, abrupt change of the crystal lattice and the band GaP of the second transition layer due to abrupt change of the components is avoided, and the crystal lattice and the band GaP in the second transition layer can gradually change in a stable change trend from being identical to those of the first transition layer to being identical to those of the ohmic contact layer. And the junction of the second transition layer and the ohmic contact layer has the same lattice and band gap as those of the ohmic contact layer, so that the second transition layer and the ohmic contact layer form good ohmic contact.
In summary, the transition layer is located between the P-type window layer and the ohmic contact layer, the transition layer includes a first transition layer and a second transition layer, the first transition layer can stably realize transition from the P-type window layer to the lattice and the band gap of the second transition layer, and the second transition layer can stably realize transition from the P-type window layer to the lattice and the band gap of the ohmic contact layer, so that the transition layer can stably realize transition from the P-type window layer to the lattice and the band gap of the ohmic contact layer, which is conducive to improving the working performance of the near infrared LED, and enables the transition layer to realize good ohmic contact with the P-type window layer and the ohmic contact layer, i.e., enables the P-type window layer and the ohmic contact layer to realize good ohmic contact through the transition layer.
In general, the reaction source for forming the first transition layer includes: the reaction sources for forming the second transition layer include trimethylgallium, arsine and phosphane, but the application is not limited thereto, and the reaction sources are specifically defined according to the situation. In order to ensure the crystallization quality of the first transition layer and the second transition layer, when the first transition layer is formed, the ratio of the arsine content in the reaction source to the sum of the trimethylaluminum content and the trimethylgallium content is greater than 20, that is, the ratio of the sum of the trimethylaluminum content and the trimethylgallium content in the reaction source to the arsine content is less than one twentieth, and when the second transition layer is formed, the ratio of the sum of the arsine content and the phosphane content in the reaction source to the sum of the trimethylgallium content is greater than 20, but the application is not limited thereto, and the application is specifically defined according to the situation. It should be noted that the growth temperature of the first transition layer is between 650 ℃ and 750 ℃, and the growth temperature of the second transition layer is between 650 ℃ and 750 ℃, but the application is not limited thereto, and the application is specifically defined according to the situation.
On the basis of the foregoing embodiments, in one embodiment of the present application, controlling the growth speed of the second transition layer according to the value of P/(p+as), and forming the second transition layer on the side of the first transition layer facing away from the substrate surface includes: the value of P/(P+As) is smaller than a first preset value, and the growth speed of the second transition layer is controlled to be reduced from the first growth speed to the second growth speed at a uniform speed within a first preset time, so that a first sub-transition layer is formed; the value of P/(P+As) is between the first preset value and the second preset value, including the end point value, namely the value range of P/(P+As) is between the first preset value and the second preset value, andthe endpoint value is included, the growth speed of the second transition layer is controlled to be the second growth speed in a second preset time, and a second sub-transition layer is formed on one side, away from the substrate, of the first sub-transition layer; the value of P/(P+As) is larger than a second preset value, in a third preset time, the growth speed of the second transition layer is controlled to be increased from the second growth speed to a third growth speed at a uniform speed, and a third sub-transition layer is formed on one side of the second sub-transition layer, which is far away from the surface of the substrate, wherein the first preset value is 0.2, the second preset value is 0.7, and the range of the first growth speed is The value of the second growth speed is in the range of +.>The value range of the third growth speed is +.>
Specifically, in the embodiment of the present application, as shown in fig. 2 and 3, fig. 2 is a graph of P content versus P/(p+as) when GaAsP is formed, fig. 3 is a graph of growth rate versus P/(p+as) in the second transition layer, and it can be seen from fig. 2 that when the value of P/(p+as) is smaller than 0.2 or greater than 0.7, that is, when the value of P/(p+as) is smaller than the first preset value or greater than the second preset value, P component incorporation is obvious, so that the incorporation efficiency of P component is higher, and the incorporation efficiency of P component varies with the change of the value of P/(p+as), and when the value of P/(p+as) is between 0.2 and 0.7, the incorporation efficiency of P component is relatively low, and the incorporation efficiency is almost unchanged, that is, when the value of P/(p+as) is from small to large, the incorporation efficiency of P component undergoes a large-small-large change process. Since the incorporation efficiency of the P component is relatively low when the value of P/(p+as) is between 0.2 and 0.7, and the incorporation efficiency of the P component is relatively high when the value of P/(p+as) is less than 0.2, in order to achieve smooth transition of crystal lattices and energy bands of the first and second sub-transition layers, the growth rate of forming the first sub-transition layer is greater than the growth rate of forming the second sub-transition layer, so that the change rate of the P component in the first sub-transition layer is the same As the change rate of the P component in the second sub-transition layer As much As possible, to achieve smooth transition of crystal lattices and energy bands of the first and second sub-transition layers. And when the value of P/(P+As) is smaller than 0.2, the incorporation efficiency of the P component changes along with the change of the ratio of P/(P+As), not a constant value, and the P component gradually decreases along with the increase of the value of P/(P+As), so that the growth speed of the first sub-transition layer can be controlled to realize the uniform change of the P component in the first sub-transition layer As much As possible, and the growth speed of the first sub-transition layer is uniformly reduced when the first sub-transition layer is formed. And when the value of P/(P+As) is smaller than a first preset value, the incorporation efficiency of the P component is higher, and when the value of P/(P+As) is between the first preset value and a second preset value, the incorporation efficiency of the P component is lower, so that the change rate of the P component in the first transition layer is higher, the change rate of the P component in the second transition layer is lower, and in order to avoid mutation of the P component at the junction of the transition of the first transition layer and the second transition layer, and the growth speed of the first transition layer is uniformly reduced to a second growth speed when the first transition layer is formed.
As can also be seen from fig. 2, when the value of P/(p+as) is greater than 0.7, the incorporation efficiency of the P component is relatively high, and thus in order to achieve a smooth transition of the crystal lattices and the band gaps of the second and third sub-transition layers, the growth rate at which the third sub-transition layer is formed is greater than the growth rate at which the second sub-transition layer is formed, so that the change of the P component in the third sub-transition layer is As same As the change rate of the P component in the second sub-transition layer As possible, achieving a smooth transition of the crystal lattices and the band gaps of the second and third sub-transition layers. In addition, as can be seen from fig. 2, when the value of P/(p+as) is greater than 0.7, the incorporation efficiency of the P component becomes greater As the value of P/(p+as) becomes greater, and thus the growth rate of the third sub-transition layer is increased at a uniform rate in order to uniformly vary the P component in the third sub-transition layer.
It should be noted that, based on the above embodiment, in the embodiment of the present application, the range of the thickness of the first sub-transition layer is 10nm to 15nm, including the end point value, the range of the thickness of the second sub-transition layer is 5nm to 15nm, including the end point value, and the range of the thickness of the third sub-transition layer is 5nm to 15nm, including the end point value, but the application is not limited thereto, and is specifically defined as the case. The specific values of the first preset time, the second preset time and the third preset time are not limited, and are specific according to the situation.
On the basis of the foregoing embodiment, in one embodiment of the present application, the manufacturing method further includes:
s5: before an N-type layer, a light-emitting layer, a P-type layer, a transition layer and an ohmic contact layer are formed on the surface of the substrate, a buffer layer is formed on the surface of the substrate, and the buffer layer covers the surface of the substrate; the buffer layer is a GaAs layer and is used for realizing lattice matching with the substrate. Wherein, the value range of the thickness of the buffer layer is 200 nm-1000 nm, and the growth temperature of the buffer layer is 650-750 ℃, but the application is not limited to this, and the application is specific according to the situation.
After forming a buffer layer, an N-type layer, a light emitting layer, a P-type layer, a transition layer, and an ohmic contact layer on the substrate surface along the side facing away from the substrate surface, forming a structure in the form of H 2 Annealing for 1-5 min under the atmosphere, and cooling to room temperature to finish the manufacture of the near infrared LED epitaxial structure to obtain the near infrared LED epitaxial structure.
Correspondingly, the application also provides a near-infrared LED epitaxial structure, which is manufactured by the manufacturing method of any embodiment, as shown in fig. 4, and the epitaxial structure comprises:
A substrate 10, wherein the substrate 10 is a GaAs substrate doped with Si, but the application is not limited thereto, and the substrate is specifically determined according to circumstances;
an N-type layer 20, a light-emitting layer 30 and a P-type layer which are arranged on the surface of the substrate 10 and are sequentially arranged along one side away from the surface of the substrate 10A layer 40, wherein the P-type layer 40 includes a P-type confinement layer 41 and a P-type window layer 42 sequentially arranged along one side of the surface of the substrate 10, and the P-type window layer 42 is Al x Ga 1-x As layer, 0.1<x<0.5; it should be noted that, the content of each component in the P-type window layer is not limited in the present application, and in other embodiments of the present application, the content of each component in the P-type window layer may also be other value ranges, which is specifically determined according to circumstances;
a transition layer 50 located on a side of the P-type layer 40 facing away from the surface of the substrate 10, wherein the transition layer 50 includes a first transition layer 51 and a second transition layer 52, and the first transition layer 51 is Al y Ga 1-y An As layer, the Al component content in the first transition layer 51 decreases uniformly from x to 0, 0.ltoreq.y.ltoreq.x in a direction away from the surface of the substrate 10, and the second transition layer 52 is GaAs 1-z P z The content of the P component in the second transition layer 52 increases uniformly from 0 to 1, 0.ltoreq.z.ltoreq.1 in the direction away from the surface of the substrate 10;
And an ohmic contact layer 60 positioned on one side of the transition layer 50 away from the surface of the substrate 10, wherein the ohmic contact layer 60 is a GaP layer. The thickness of the ohmic contact layer ranges from 20nm to 20000nm, including the end point values, but the application is not limited thereto, and is specifically determined according to circumstances.
Specifically, in this embodiment of the present application, the transition layer is located between the P-type window layer and the ohmic contact layer, where the P-type window layer is Al x Ga 1-x An As layer, the ohmic contact layer is a GaP layer, the transition layer comprises a first transition layer and a second transition layer, wherein the first transition layer is Al y Ga 1-y The Al component content in the first transition layer is uniformly reduced from x to 0 along the direction away from the surface of the substrate, so that the Al component content of the side, which is contacted with the P-type window layer, of the first transition layer is the same As the Al component content of the P-type window layer, and the Al component content of the side, which is contacted with the P-type window layer, of the first transition layer is the same As the material of the P-type window layer, and is all Al x Ga 1-x As, therefore, the crystal lattice and the band gap of one side of the first transition layer, which is contacted with the P-type window layer, are identical to those of the P-type window layer, meanwhile, at the junction of the first transition layer and the second transition layer, the materials of the first transition layer and the second transition layer are GaAs, so that at the junction of the first transition layer and the second transition layer, the crystal lattice and the band gap of the first transition layer are identical, the content of Al component in the first transition layer is uniformly reduced from x to 0, the crystal lattice and the band gap of the first transition layer are prevented from being suddenly changed due to the sudden change of the component, and the crystal lattice and the band gap of the first transition layer can gradually change in a stable change trend, and gradually transition from being identical with those of the P-type window layer to being identical with those of the second transition layer. And the junction of the first transition layer and the P-type window layer has the same lattice and band gap as those of the P-type window layer, and can enable the first transition layer and the P-type window layer to form good ohmic contact.
The second transition layer is GaAs 1-z P z The content of P component in the second transition layer is uniformly increased from 0 to 1 along the direction facing away from the surface of the substrate, so that one side of the second transition layer, which is contacted with the first transition layer, is GaAs, namely, at the junction of the first transition layer and the second transition layer, the materials of the first transition layer and the second transition layer are GaAs, further, at the junction of the first transition layer and the second transition layer, the lattice and the band GaP of the first transition layer are the same as those of the second transition layer, and meanwhile, the side of the second transition layer, which is contacted with the ohmic contact layer, is GaP, namely, at the junction of the second transition layer and the ohmic contact layer, the second transition layer and the ohmic contact layer are GaP, so that at the junction of the second transition layer and the ohmic contact layer, the lattice and the band GaP of the second transition layer are the same, and the content of P component in the second transition layer facing away from the surface of the substrate is the sameAnd 0 is uniformly increased until 1, so that the lattice and the band gap of the second transition layer are prevented from being suddenly changed due to the sudden change of the components, and the lattice and the band gap in the second transition layer can be gradually changed in a stable change trend, and are transited from being identical to those of the first transition layer to being identical to those of the ohmic contact layer. And the junction of the second transition layer and the ohmic contact layer has the same lattice and band gap as those of the ohmic contact layer, so that the second transition layer and the ohmic contact layer form good ohmic contact.
In summary, the transition layer is located between the P-type window layer and the ohmic contact layer, the transition layer includes a first transition layer and a second transition layer, the first transition layer can stably realize transition from the P-type window layer to the lattice and the band gap of the second transition layer, and the second transition layer can stably realize transition from the P-type window layer to the lattice and the band gap of the ohmic contact layer, so that the transition layer can stably realize transition from the P-type window layer to the lattice and the band gap of the ohmic contact layer, which is conducive to improving the working performance of the near infrared LED, and enables the transition layer to realize good ohmic contact with the P-type window layer and the ohmic contact layer, i.e., enables the P-type window layer to realize good ohmic contact with the ohmic contact layer through the transition layer.
Based on the foregoing embodiments, in one embodiment of the present application, the value range of the first transition layer is 5nm to 10nm, including the endpoint value, but the present application is not limited thereto, and the present application is specifically limited thereto as the case may be.
On the basis of the above embodiment, in one embodiment of the present application, as shown in fig. 5, the second transition layer 52 includes a first sub-transition layer 521, a second sub-transition layer 522, and a third sub-transition layer 523 sequentially arranged along a side facing away from the surface of the substrate 10. The thickness of the first sub-transition layer ranges from 10nm to 15nm, including the end point value, the thickness of the second sub-transition layer ranges from 5nm to 15nm, including the end point value, and the thickness of the third sub-transition layer ranges from 5nm to 15nm, including the end point value, but the application is not limited thereto, and the application is specifically defined according to the situation.
On the basis of the above embodiment, in one embodiment of the present application, as further shown in fig. 5, the N-type layer 20 includes an N-type corrosion stop layer 21, an N-type ohmic contact layer 22, an N-type window layer 23, and an N-type confinement layer 24 sequentially arranged along a side facing away from the surface of the substrate 10. Wherein the N-type corrosion cut-off layer is a GaInP layer, and the thickness range is 200 nm-500 nm, including the end point value; the N-type ohmic contact layer is a GaAs layer, and the thickness range is 30 nm-100 nm, including the end point value; the N-type window layer Al a Ga 1-a As layer, 0.1<a<0.5, the thickness range is 5000 nm-10000 nm, including the end point value; the N-type limiting layer is Al b Ga 1-b As layer, 0.2<b<1.0, and a<b, the thickness range is 5000 nm-10000 nm, including the end point value, but the thickness of the first sub-transition layer, the second sub-transition layer and the third sub-transition layer is not limited in the embodiment of the application, and the content of the Al component in the first sub-transition layer, the second sub-transition layer and the third sub-transition layer is not limited, and is specifically determined according to the situation.
Based on the above embodiment, in one embodiment of the present application, the P-type confinement layer is Al c Ga 1-c As layer, 0.2<c<1.0, and x<And c, the thickness ranges from 100nm to 400nm, including the end point value. It should be noted that, in the embodiment of the present application, the content of the Al component in the P-type confinement layer is not limited, and the thickness of the P-type confinement layer is not limited, where appropriate.
On the basis of the above embodiment, in one embodiment of the present application, as further shown in fig. 5, the light emitting layer 30 includes N light emitting units 31, 3N and 20 sequentially arranged along a side facing away from the surface of the substrate 10, and the light emitting units 31 include a quantum well layer 311 and a quantum barrier layer 312 sequentially arranged along a side facing away from the surface of the substrate 10. The quantum well layer is an InGaAs layer, the quantum barrier layer is an AlGaAs layer, the thickness of the quantum well layer ranges from 3nm to 10nm, inclusive, and the thickness of the quantum barrier layer ranges from 10nm to 30nm, inclusive, although the embodiment of the present application is not limited thereto, and is specifically determined according to circumstances.
Based on the above embodiments, in one embodiment of the present application, as shown in fig. 6, the near infrared LED epitaxial structure further includes: and the buffer layer 70 is positioned between the surface of the substrate 10 and the N-type layer 20, wherein the buffer layer 70 is a GaAs layer so as to realize lattice matching with the substrate, and the thickness of the buffer layer 70 has a value ranging from 200nm to 1000nm, including end points. It should be noted that, in the embodiment of the present application, the thickness of the buffer layer is not limited, and the embodiment is specific as the case may be.
In summary, the present application provides a method for manufacturing a near infrared LED epitaxial structure and an epitaxial structure, where the manufacturing method includes: providing a substrate; sequentially forming an N-type layer, a light-emitting layer, a P-type layer, a transition layer and an ohmic contact layer on the surface of the substrate, wherein the ohmic contact layer is a GaP layer, and the P-type layer comprises a P-type limiting layer and a P-type window layer, and the P-type window layer is Al x Ga 1-x An As layer; forming the transition layer includes: forming a first transition layer of Al y Ga 1-y An As layer, the Al component content in the first transition layer decreasing uniformly from x to 0 in a direction away from the substrate surface; forming the second transition layer, wherein the second transition layer is GaAs 1-z P z Forming the second transition layer includes: according to the value of P/(P+As), controlling the growth speed of the second transition layer to form the second transition layer, wherein the As component content in the second transition layer is uniformly reduced from 1 to 0 along the direction away from the substrate surface, so that the first transition layer can stably realize the transition from the P-type window layer to the crystal lattice and the band gap of the second transition layer, and the second transition layer can stably realize the transition from the second transition layer to the crystal lattice and the band gap of the ohmic contact layer, thereby enabling the transition layer to stably realize the transition from the P-type window layer to the crystal lattice and the band gap of the ohmic contact layer, contributing to improving the working performance of the near infrared LED and enabling the transition layer to be matched with the P-type window The opening layer and the ohmic contact layer realize good ohmic contact.
In the description, each part is described in a parallel and progressive mode, and each part is mainly described as a difference with other parts, and all parts are identical and similar to each other.
The features described in the various embodiments of the present disclosure may be interchanged or combined with one another in the description to enable those skilled in the art to make or use the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. The manufacturing method of the near infrared LED epitaxial structure is characterized by comprising the following steps of:
providing a substrate;
sequentially forming an N-type layer, a light-emitting layer and a P-type layer on one side of the substrate surface, which is away from the substrate surface, wherein the P-type layer comprises a P-type limiting layer and a P-type window layer which are sequentially arranged on one side of the substrate surface, and the P-type window layer is Al x Ga 1-x As layer, 0.1<x<0.5；
Forming a transition layer on one side of the P-type layer away from the surface of the substrate, wherein forming the transition layer comprises:
forming a first transition layer on one side of the P-type layer, which is far away from the surface of the substrate, wherein the first transition layer is Al y Ga 1-y An As layer, wherein y is more than or equal to 0 and less than or equal to x, and the content of Al component in the first transition layer is uniformly reduced from x to 0 along the direction deviating from the surface of the substrate;
forming a second transition layer on one side of the first transition layer, which is far away from the surface of the substrate, wherein the second transition layer is GaAs 1-z P z A layer, z is more than or equal to 0 and less than or equal to 1, P in the second transition layerThe component content increases uniformly from 0 to 1 in a direction away from the substrate surface, and forming the second transition layer comprises:
controlling the growth speed of the second transition layer according to the value of P/(P+As);
wherein, the value of P/(P+As) is smaller than a first preset value, and the growth speed of the second transition layer is controlled to be reduced from the first growth speed to the second growth speed at a uniform speed within a first preset time, so As to form a first sub-transition layer;
the value of P/(P+As) is between the first preset value and a second preset value, wherein the value comprises an endpoint value, the growth speed of the second transition layer is controlled to be the second growth speed in a second preset time, and a second sub-transition layer is formed on one side of the first sub-transition layer, which is far away from the surface of the substrate;
The value of P/(P+As) is larger than a second preset value, the growth speed of the second transition layer is controlled to be increased from the second growth speed to a third growth speed at a constant speed in a third preset time, and a third sub-transition layer is formed on one side of the second sub-transition layer, which is away from the surface of the substrate;
the reaction source for forming the second transition layer comprises phosphane and arsine, P/(P+As) is the proportion of the content of the phosphane in the reaction source to the sum of the content of the phosphane and the arsine, the first preset value is 0.2, and the second preset value is 0.7; the value range of the first growth speed is 10A/s-20A/s, the value range of the second growth speed is 5A/s-15A/s, the value range of the third growth speed is 10A/s-20A/s, the value range of the thickness of the first sub-transition layer is 10 nm-15 nm, the value range of the thickness of the second sub-transition layer is 5 nm-15 nm, and the value range of the thickness of the third sub-transition layer is 5 nm-15 nm;
and forming an ohmic contact layer on one side of the transition layer, which is away from the surface of the substrate, wherein the ohmic contact layer is a GaP layer.
2. The method of manufacturing according to claim 1, further comprising:
forming a buffer layer on the surface of the substrate before forming the N-type layer, the light-emitting layer, the P-type layer, the transition layer and the ohmic contact layer on the surface of the substrate, wherein the buffer layer covers the surface of the substrate;
The buffer layer is a GaAs layer, and the thickness of the buffer layer is in a range of 200-1000 nm.
3. A near infrared LED epitaxial structure, characterized in that the near infrared LED epitaxial structure is a near infrared LED epitaxial structure manufactured by the manufacturing method of claim 1, comprising:
a substrate;
the light-emitting device comprises a substrate, an N-type layer, a light-emitting layer and a P-type layer, wherein the N-type layer, the light-emitting layer and the P-type layer are arranged on the surface of the substrate in sequence along one side away from the surface of the substrate, the P-type layer comprises a P-type limiting layer and a P-type window layer which are arranged on one side of the surface of the substrate in sequence, and the P-type window layer is Al x Ga 1-x As layer, 0.1<x<0.5；
The transition layer is positioned on one side of the P-type layer away from the surface of the substrate and comprises a first transition layer and a second transition layer, wherein the first transition layer is Al y Ga 1-y An As layer, wherein y is more than or equal to 0 and less than or equal to x, the content of Al component in the first transition layer is uniformly reduced from x to 0 along the direction deviating from the surface of the substrate, and the second transition layer is GaAs 1-z P z Z is more than or equal to 0 and less than or equal to 1, and the content of the P component in the second transition layer uniformly increases from 0 to 1 along the direction away from the surface of the substrate;
and the ohmic contact layer is positioned on one side of the transition layer, which is away from the surface of the substrate, and is a GaP layer.
4. The epitaxial structure of claim 3, wherein the first transition layer thickness has a value in the range of 5nm to 10nm;
the second transition layer comprises a first sub-transition layer, a second sub-transition layer and a third sub-transition layer which are sequentially arranged along one side away from the surface of the substrate, the value range of the thickness of the first sub-transition layer is 10 nm-15 nm, the value range of the thickness of the second sub-transition layer is 5 nm-15 nm, and the value range of the thickness of the third sub-transition layer is 5 nm-15 nm.
5. The epitaxial structure of claim 3, wherein the N-type layer comprises an N-type corrosion stop layer, an N-type ohmic contact layer, an N-type window layer, and an N-type confinement layer arranged in that order along a side facing away from the substrate surface;
the N-type corrosion cut-off layer is a GaInP layer, and the thickness range is 200-500 nm; the N-type ohmic contact layer is a GaAs layer, and the thickness range is 30 nm-100 nm; the N-type window layer is Al a Ga 1-a As layer, 0.1<a<0.5, wherein the thickness is 5000-10000 nm; the N-type limiting layer is Al b Ga 1-b As layer, 0.2<b<1.0, and a<And b, the value range of the thickness is 5000-10000 nm.
6. The epitaxial structure of claim 3, wherein the P-type confinement layer is Al c Ga 1-c As layer, 0.2<c<1.0, and x<c, performing operation; the thickness of the P-type limiting layer is 100 nm-400 nm.
7. The epitaxial structure of claim 3, wherein the light emitting layer comprises N light emitting cells arranged in sequence along a side facing away from the substrate surface, N being 3-20, the light emitting cells comprising a quantum well layer and a quantum barrier layer arranged in sequence along a side facing away from the substrate surface;
the quantum well layer is an InGaAs layer, the quantum barrier layer is an AlGaAs layer, the thickness of the quantum well layer ranges from 3nm to 10nm, and the thickness of the quantum barrier layer ranges from 10nm to 30nm.
8. The epitaxial structure of claim 3, further comprising:
and the buffer layer is positioned between the surface of the substrate and the N-type layer, wherein the buffer layer is a GaAs layer, and the thickness of the buffer layer is in a range of 200-1000 nm.
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| WO2017067331A1 (en) * | 2015-10-19 | 2017-04-27 | 天津三安光电有限公司 | Light-emitting diode and manufacturing method therefor |
| CN108767077A (en) * | 2018-05-24 | 2018-11-06 | 深圳市光脉电子有限公司 | A kind of novel chip light-source structure and its preparation process |
| WO2021208766A1 (en) * | 2020-04-17 | 2021-10-21 | 华灿光电(苏州）有限公司 | Algainp-based light emitting diode chip and manufacturing method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2017067331A1 (en) * | 2015-10-19 | 2017-04-27 | 天津三安光电有限公司 | Light-emitting diode and manufacturing method therefor |
| CN108767077A (en) * | 2018-05-24 | 2018-11-06 | 深圳市光脉电子有限公司 | A kind of novel chip light-source structure and its preparation process |
| WO2021208766A1 (en) * | 2020-04-17 | 2021-10-21 | 华灿光电(苏州）有限公司 | Algainp-based light emitting diode chip and manufacturing method therefor |
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