CN114308905A - Wafer plasma cleaning device and wafer processing equipment - Google Patents
Wafer plasma cleaning device and wafer processing equipment Download PDFInfo
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- CN114308905A CN114308905A CN202111665372.2A CN202111665372A CN114308905A CN 114308905 A CN114308905 A CN 114308905A CN 202111665372 A CN202111665372 A CN 202111665372A CN 114308905 A CN114308905 A CN 114308905A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 131
- 238000012545 processing Methods 0.000 title claims abstract description 14
- 238000009434 installation Methods 0.000 claims abstract description 9
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- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
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Abstract
The invention relates to the technical field of wafer cleaning device equipment, in particular to a wafer plasma cleaning device and wafer processing equipment. The wafer plasma cleaning apparatus includes: the cleaning cavity is provided with an opening on one side surface so as to be suitable for the wafer to enter and exit, and an installation part suitable for being fixed in an EFEM (extended surface field emission electromagnetic) region is arranged on the outer side of the cleaning cavity; the cleaning device comprises a cleaning cavity, a plurality of electrode plates, a group of supporting blocks and a plurality of clamping blocks, wherein the plurality of electrode plates are fixed in the cleaning cavity, each electrode plate is horizontally arranged, the plurality of electrode plates are distributed at intervals, the polarities of adjacent electrode plates are opposite, a group of supporting blocks are arranged on the upper surfaces of the electrode plates, each group of supporting blocks is suitable for supporting a wafer, the supporting blocks are made of non-metal materials, and gaps suitable for an EFEM (edge-defined electromagnetic actuator) mechanical arm to take and place materials are formed between the supporting surfaces of the supporting blocks and the upper surfaces of the corresponding electrode plates; the automatic gate valve is arranged on the side face of the opening of the cleaning cavity and is suitable for controlling the opening and closing of the cleaning cavity. The wafer plasma cleaning device provided by the invention can improve the cleaning efficiency of the wafer and simultaneously avoid the wafer from secondary pollution.
Description
Technical Field
The invention relates to the technical field of wafer cleaning devices, in particular to a wafer plasma cleaning device and wafer processing equipment.
Background
Wafer refers to a silicon wafer used for making silicon semiconductor circuits, the starting material of which is silicon. After the wafer is processed, trace contaminants (including SiO) still adhere to the surface2、Al2O3And organic substances in the polishing solution) to be removed by washing. Among them, the plasma cleaning technique stands out from the absolute advantage in its cleaning effect.
The existing wafer plasma cleaning technology is limited by the requirement of the occupied area of equipment in a factory, and a plasma cleaning device is placed in a main machine table to reduce the occupied area. The plasma cleaning device is limited by the frame structure design and the device layout of the main machine table, the size design is small, the requirement of cleaning 1-2 wafers at the same time can be met, and the cleaning efficiency is low. In addition, the vacuum chamber of the existing wafer plasma cleaning device mainly adopts a manual switch, so that the cleanliness requirement of a wafer manufacturing process cannot be effectively ensured, and secondary pollution is easily caused to the wafer after cleaning.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defects that the wafer plasma cleaning device in the prior art has low cleaning efficiency and is easy to cause secondary pollution to the wafer, so as to provide a wafer plasma cleaning device and a wafer processing apparatus which have high cleaning efficiency and can avoid the secondary pollution to the wafer.
The invention provides a wafer plasma cleaning device, comprising:
the cleaning cavity is provided with an opening on one side surface so as to be suitable for the wafer to enter and exit, and an installation part suitable for being fixed in an EFEM (extended flash Environment) area is arranged on the outer side of the cleaning cavity;
the cleaning device comprises a cleaning cavity, a plurality of electrode plates, a plurality of supporting blocks and a plurality of clamping pieces, wherein the cleaning cavity is internally provided with a plurality of cleaning holes, each electrode plate is horizontally arranged, the electrode plates are distributed at intervals, the polarities of the adjacent electrode plates are opposite, the upper surfaces of the electrode plates are provided with a group of supporting blocks, each group of supporting blocks is suitable for supporting a wafer, the supporting blocks are made of non-metal materials, and gaps suitable for an EFEM manipulator to take and place materials are formed between the supporting surfaces of the supporting blocks and the upper surfaces of the corresponding electrode plates;
and the automatic gate valve is arranged on the side surface of the opening of the cleaning cavity and is suitable for controlling the opening and the closing of the cleaning cavity.
Optionally, the number of each group of supporting blocks is greater than or equal to 3, the supporting blocks are respectively suitable for being supported at different edge positions of the wafer, and steps suitable for positioning the wafer are arranged on the upper surfaces of the supporting blocks.
Optionally, the ladder face of step is the horizontal plane, the ladder side of ladder is the combined face of inclined plane and vertical face, the lower extreme of vertical face with the horizontal plane meets, the upper end of vertical face with the lower extreme of inclined plane meets, just the upper end of inclined plane is to keeping away from the direction of ladder face extends.
Optionally, the distance between the horizontal plane and the upper surface of the corresponding electrode plate is greater than or equal to 10 mm.
Optionally, each group of support blocks is provided with four support blocks, and the support blocks are fixed on the electrode plate through fasteners.
Optionally, the electrode plate is separated from the inner side wall of the cleaning cavity by an insulating strip.
Optionally, the surface of the electrode plate is plated with a non-metallic film.
Optionally, the method further includes:
the first strip-shaped conductive plate is vertically fixed in the cleaning cavity and is connected with all the electrode plates with the same polarity;
and the second strip-shaped conductive plate is vertically fixed in the cleaning cavity and is connected with all the electrode plates with the same polarity, and the second strip-shaped conductive plate and the first strip-shaped conductive plate are respectively connected with the electrode plates with different polarities.
The invention provides a wafer processing device, comprising:
a main console;
the EFEM area is suitable for realizing automatic loading and unloading of the wafer;
the wafer plasma cleaning device is fixed in the EFEM region through the mounting part;
the EFEM manipulator is suitable for realizing the loading and unloading of wafers in the main machine table and the cleaning cavity.
Optionally, the EFEM area includes a wafer loading platform, and the wafer loading platform is at the same height as the cleaning chamber.
The technical scheme of the invention has the following advantages:
1. the wafer plasma cleaning device provided by the invention comprises a cleaning cavity, wherein an installation part suitable for being fixed in an EFEM (electronic flash memory) area is arranged on the outer side of the cleaning cavity, the whole device can be installed in the EFEM area through the installation part, and is not limited by the frame structure design and the device layout of a host computer, so that the size can be designed to be larger, the space requirement for simultaneously cleaning a plurality of wafers is met, and the cleaning efficiency of the wafers is improved; the whole device is arranged in an EFEM area, and does not occupy other space, thereby solving the contradiction that the equipment is limited by the requirement of the floor space of a factory; the cleaning device is provided with an automatic gate valve, so that the cleaning cavity can be automatically opened and closed, a gap suitable for an EFEM manipulator to take and place materials is formed between the supporting surface of the supporting block and the upper surface of the corresponding electrode plate, the taking and placing of the wafer can be realized through the EFEM manipulator, and the secondary pollution of the wafer caused by manual material taking is avoided; the electrode plates with different polarities are alternately distributed at intervals, the plasma can generate uniform ionization effect, and the wafer is placed in the formed gap, so that the cleaning effect of the plasma cleaning device can be ensured. In addition, the wafer plasma cleaning device is arranged outside the main machine table, and maintenance is facilitated.
2. According to the wafer plasma cleaning device provided by the invention, the steps suitable for positioning the wafer are arranged on the upper surface of the supporting block, so that the wafer can be positioned, and the position precision of the wafer is ensured, thereby being beneficial to matching with an EFEM manipulator and ensuring that the wafer transmission is realized on the premise of not modifying the movement stroke of the EFEM manipulator.
3. According to the wafer plasma cleaning device provided by the invention, the step side surface of the step is a combined surface of the inclined surface and the vertical surface, the wafer slides to the vertical surface through the inclined surface to complete positioning, even if an error in a certain range exists when the EFEM manipulator puts the wafer, the error can be successfully eliminated through the combined surface, and the precision requirement on the EFEM manipulator is reduced.
4. According to the wafer plasma cleaning device provided by the invention, the distance between the horizontal plane of the supporting block and the upper surface of the corresponding electrode plate is more than or equal to 10mm, and the material taking requirement of an EFEM manipulator can be met.
5. According to the wafer plasma cleaning device provided by the invention, the surface of the electrode plate is plated with the non-metal film, so that the electrode plate is prevented from generating ion precipitation in the plasma ionization process to cause secondary pollution of the wafer.
6. The wafer processing equipment provided by the invention has any one of the advantages due to the fact that the wafer plasma cleaning device is arranged.
7. According to the wafer processing equipment provided by the invention, the height of the wafer loading platform is consistent with that of the cleaning cavity, so that the EFEM manipulator is favorably kept in the stroke range, and the position requirement of the EFEM manipulator for taking and placing the wafer is met.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of a wafer plasma cleaning apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of an embodiment of the cleaning chamber assembly of the present invention;
FIG. 3 is a schematic structural diagram of a cleaning chamber according to an embodiment of the present invention;
FIG. 4 is an assembly view of an electrode plate and associated structures in accordance with an embodiment of the present invention;
FIG. 5 is a schematic view of a support block according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a strip-shaped conductive plate according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a wafer processing apparatus according to an embodiment of the present invention.
Description of reference numerals:
1. cleaning the cavity; 11. an installation part; 2. an electrode plate; 21. a first bar-shaped conductive plate; 22. a second strip-shaped conductive plate; 23. a connecting plate; 3. a support block; 31. a step surface; 32. a step side; 4. an automatic gate valve; 5. an insulating strip; 6. an EFEM region; 7. an EFEM manipulator; 8. a cabinet body.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1 to 5, an embodiment of the present invention provides a wafer plasma cleaning apparatus, including:
the cleaning chamber body 1 is provided with an opening on one side surface so as to be suitable for the wafer to enter and exit, and an installation part 11 suitable for being fixed in the EFEM area 6 is arranged on the outer side of the cleaning chamber body 1. The cleaning cavity 1 is a main body part of the plasma cleaning device and is provided with an air valve, the air valve is externally connected with a negative pressure source and a gas source, and a vacuum state or an atmospheric pressure state in the cleaning cavity 1 is generated through the air valve; and the gas inlet is suitable for introducing generated gas and reaction gas. The shape of the cleaning chamber 1 is not limited, and is determined by the space reserved in the EFEM region 6, and preferably takes a rectangular parallelepiped shape as shown in fig. 3. The main function of the mounting portion 11 is to fix the cleaning device in the EFEM area 6, the specific structure is not limited, and the mounting portion 11 is a plurality of connecting lugs arranged at the bottom according to the specific structure of the EFEM area 6, for example, as shown in fig. 3, and the connecting lugs are fixed in the EFEM area 6 by bolts. The EFEM region 6 is a term of semiconductor art, i.e., Equipment Front End Module-EFEM.
The cleaning device comprises a cleaning cavity 1, a plurality of electrode plates 2 and a plurality of supporting blocks 3, wherein each electrode plate 2 is fixed in the cleaning cavity 1, the electrode plates 2 are distributed at intervals, the polarities of the adjacent electrode plates 2 are opposite, each supporting block 3 is suitable for supporting a wafer, each supporting block 3 is made of a non-metal material, and a gap suitable for an EFEM manipulator 7 to take and place materials is formed between the supporting surface of each supporting block 3 and the upper surface of the corresponding electrode plate 2. The electrode plate 2 is made of metal. The fixing mode of the electrode plate 2 in the cleaning cavity 1 is not limited, and preferably, the left edge and the right edge of the electrode plate 2 are fixed on the inner side wall of the cleaning cavity 1 through the insulating strips 5, as shown in fig. 4, so that the current on the electrode plate 2 can be prevented from being led to the cleaning cavity 1 to generate potential safety hazards. The shape of the support block 3 is not limited, and may be a rectangular parallelepiped, a triangular prism, or other shapes, such as the rectangular parallelepiped shape in fig. 5. The number of the supporting blocks 3 is not limited, and the supporting of the wafer can be completed by combining the shape. The supporting block 3 may be made of non-metallic materials such as polyetheretherketone or polyethylene terephthalate.
And the automatic gate valve 4 is arranged on the open side surface of the cleaning cavity 1 and is suitable for controlling the opening and closing of the cleaning cavity 1. The automatic gate valve 4 is a manual gate valve, and is designed to be automatically opened and closed, such as a pneumatic gate valve, an electric gate valve, and the like.
It should be noted that, in practical application, a cabinet 8 may be fixed below the cleaning chamber 1, as shown in fig. 1, on one hand, the cabinet may be used to store an air pump, a cable, etc., on the other hand, the utilization rate of the space may be improved, and the occupied space may be further reduced.
When in work, the operation is carried out according to the following steps:
1) firstly, controlling the automatic gate valve 4 to act, and opening a vacuum chamber;
2) the EFEM manipulator 7 acquires the wafer, the software reads the position parameters of the first layer electrode plate 2, and after no error is confirmed, the software feeds back a signal to the EFEM manipulator 7 to start to place the first wafer;
3) the EFEM manipulator 7 places other layers of wafers from bottom to top;
4) closing the gate valve, vacuumizing the cleaning cavity 1 through the air valve, and detecting the vacuum degree of the cleaning cavity 1 through the sensor to enable the vacuum degree to reach the preposed requirement of plasma cleaning;
5) sequentially opening a generated gas MFC and a reaction gas MFC to enable the two gases to enter a cleaning cavity 1 through an air inlet, and opening a radio frequency power supply to generate plasma through an ionization process to clean the surface of a wafer;
6) after the cleaning is finished, the air valve is used for inflating the cleaning cavity 1 to ensure that the pressure environment of the cleaning cavity is restored to the atmospheric pressure state;
7) and opening the automatic gate valve 4, feeding back the wafer position by the EFEM manipulator 7 through software, and taking out the cleaned wafers from bottom to top in sequence for next process preparation.
According to the wafer plasma cleaning device, the whole device is arranged in the EFEM (electronic flash memory) area 6 through the installation part 11, so that the cleaning cavity 1 is not limited by the frame structure design and the device layout of a host computer, the size can be designed to be larger, the space requirement for simultaneously cleaning a plurality of wafers is met, and the cleaning efficiency of the wafers is improved; the cleaning device is provided with an automatic gate valve 4, automatic opening and closing of the cleaning cavity 1 can be achieved, a gap suitable for the EFEM manipulator 7 to take and place materials is formed between the supporting face of the supporting block 3 and the upper surface of the corresponding electrode plate 2, the wafer taking and placing can be achieved through the EFEM manipulator 7, and wafer secondary pollution caused by manual material taking is avoided.
Referring to fig. 4, as a modification: the number of each group of supporting blocks 3 is more than or equal to 3, the supporting blocks are respectively suitable for being supported at different edge positions of the wafer, and steps suitable for positioning the wafer are arranged on the upper surfaces of the supporting blocks 3. More than three supporting blocks 3 can support the wafer more stably. The steps on the supporting blocks 3 are mutually matched to realize the positioning of the wafer, so that the position precision of the wafer is ensured, and the matching with the EFEM manipulator 7 is facilitated.
Referring to fig. 5, as a modification: the ladder face 31 of step is the horizontal plane, the ladder side 32 of step is the combined surface of inclined plane and vertical face, the lower extreme of vertical face with the horizontal plane meets, the upper end of vertical face with the lower extreme of inclined plane meets, just the upper end of inclined plane is to keeping away from the direction of ladder face 31 extends. The wafer passes through the inclined plane slides into the vertical plane and fixes a position, has reduced the required precision to EFEM manipulator 7, even the position has the deviation slightly when EFEM manipulator 7 places the wafer on supporting shoe 3, the wafer also can be adjusted through the inclined plane, finally gets into the vertical plane and fixes a position.
Further, the distance between the horizontal plane and the upper surface of the corresponding electrode plate 2 is more than or equal to 10 mm. So set up, do benefit to getting of EFEM manipulator 7.
Referring to fig. 5, preferably, four support blocks 3 are provided per group, and the support blocks 3 are fixed to the electrode plates 2 by fasteners. Specifically, the fastener may adopt a common structure such as a bolt or a screw. The installation of supporting shoe 3 is realized through the fastener, convenient assembling, also be convenient for change.
Referring to fig. 4, the electrode plate 2 is separated from the inner side wall of the cleaning chamber 1 by an insulating strip 5. The insulating strip 5 can avoid the electric current on the plate electrode 2 to lead to cleaning cavity 1, and potential safety hazard is produced.
Further, the surface of the electrode plate 2 is plated with a non-metal film. The non-metal film can prevent the electrode plate 2 from generating ion separation in the plasma ionization process to cause secondary pollution of the wafer.
Referring to fig. 6, as a modification: the wafer plasma cleaning apparatus further includes:
the first strip-shaped conductive plate 21 is vertically fixed in the cleaning cavity 1 and is connected with all the electrode plates 2 with the same polarity;
and the second strip-shaped conductive plate 22 is vertically fixed in the cleaning cavity 1 and is connected with all the electrode plates 2 with the same polarity, and the second strip-shaped conductive plate 22 and the first strip-shaped conductive plate 21 are respectively connected with the electrode plates 2 with different polarities.
When the radio frequency power supply is used, the two strip-shaped current conducting plates are respectively connected with the positive electrode and the negative electrode of the radio frequency power supply, the connection between the electrode plate 2 and the radio frequency power supply is realized through the strip-shaped current conducting plates, and the structural arrangement is more reasonable. Specifically, two strip-shaped conductive plates are preferably fixed to the opposite sides of the open side of the cleaning chamber 1 and spaced left and right. Preferably, a plurality of horizontal connection plates 23 may be fixed to the strip-shaped conductive plate, and the connection plates 23 may be connected to the lower surfaces of the plurality of electrode plates 2, respectively.
Referring to fig. 7, an embodiment of the present invention further provides a wafer processing apparatus, including:
a main console;
the EFEM area 6 is suitable for realizing automatic loading and unloading of wafers;
the wafer plasma cleaning apparatus is fixed in the EFEM region 6 through the mounting portion 11;
the EFEM manipulator 7 is suitable for realizing loading and unloading of the wafer in the main machine table and the cleaning cavity 1. The EFEM robot 7 includes a robot body and a control platform that controls the movement of the robot.
During operation, the EFEM manipulator 7 conveys the wafer into the main machine platform for processing, the EFEM manipulator 7 takes out the wafer after processing, then transfers the wafer into the cleaning cavity 1 for cleaning, and the EFEM manipulator 7 takes out the wafer after cleaning.
Further, the EFEM area 6 includes a wafer loading station that is at the same height as the cleaning chamber 1. The EFEM manipulator 7 is kept in the stroke range, and therefore the position requirement of taking and placing the wafer by the EFEM manipulator 7 is met. Specifically, the size of the cleaning cavity 1 is designed to meet the R-axis movement stroke range (horizontal in and out) of the wafer transmitted by the EFEM manipulator 7; the height dimension of the cleaning cavity 1 meets the Z-axis (height) movement stroke range of the EFEM manipulator 7 for transmitting the wafer.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A wafer plasma cleaning apparatus, comprising:
the cleaning device comprises a cleaning cavity (1), a wafer and a cleaning device, wherein one side surface of the cleaning cavity (1) is open so as to be suitable for the wafer to enter and exit, and an installation part (11) suitable for being fixed in an EFEM (extended edge field emission) region (6) is arranged on the outer side of the cleaning cavity (1);
the cleaning device comprises a cleaning cavity (1), a plurality of electrode plates (2), a group of supporting blocks (3) and a plurality of EFEM manipulators, wherein the electrode plates (2) are fixed in the cleaning cavity (1), each electrode plate (2) is horizontally arranged, the electrode plates (2) are distributed at intervals, the polarities of the adjacent electrode plates (2) are opposite, the upper surface of each electrode plate (2) is provided with one group of supporting blocks (3), each group of supporting blocks (3) is suitable for supporting one wafer, each supporting block (3) is made of a non-metal material, and a gap suitable for an EFEM manipulator (7) to take and place materials is formed between the supporting surface of each supporting block (3) and the upper surface of the corresponding electrode plate (2);
and the automatic gate valve (4) is arranged on the side surface of the opening of the cleaning cavity (1) and is suitable for controlling the opening and closing of the cleaning cavity (1).
2. The wafer plasma cleaning device according to claim 1, characterized in that the number of each group of supporting blocks (3) is more than or equal to 3, and the supporting blocks are respectively suitable for supporting at different edge positions of the wafer, and the upper surface of the supporting block (3) is provided with a step suitable for positioning the wafer.
3. The wafer plasma cleaning apparatus according to claim 2, wherein the step surface (31) of the step is a horizontal surface, the step side surface (32) of the step is a combined surface of an inclined surface and a vertical surface, a lower end of the vertical surface is connected to the horizontal surface, an upper end of the vertical surface is connected to a lower end of the inclined surface, and the upper end of the inclined surface extends in a direction away from the step surface (31).
4. The wafer plasma cleaning device according to claim 3, characterized in that the distance between the horizontal plane and the upper surface of the corresponding electrode plate (2) is not less than 10 mm.
5. The wafer plasma cleaning apparatus according to any of claims 1 to 4, characterized in that there are four support blocks (3) per group, and the support blocks (3) are fixed to the electrode plate (2) by fasteners.
6. The wafer plasma cleaning device according to claim 1, characterized in that the electrode plate (2) is separated from the inner side wall of the cleaning chamber (1) by an insulating strip (5).
7. The wafer plasma cleaning device according to claim 1, characterized in that the surface of the electrode plate (2) is plated with a non-metallic film.
8. The wafer plasma cleaning apparatus as recited in any of claims 1 to 4, 6 and 7, further comprising:
the first strip-shaped conductive plate (21) is vertically fixed in the cleaning cavity (1) and is connected with all the electrode plates (2) with the same polarity;
the second strip-shaped conductive plate (22) is vertically fixed in the cleaning cavity (1) and is connected with all the electrode plates (2) with the same polarity, and the second strip-shaped conductive plate (22) and the first strip-shaped conductive plate (21) are respectively connected with the electrode plates (2) with different polarities.
9. A wafer processing apparatus, comprising:
a main console;
the EFEM area (6) is suitable for realizing automatic loading and unloading of the wafer;
the wafer plasma cleaning apparatus as claimed in any one of claims 1 to 8, which is fixed to the EFEM region (6) by the mounting portion (11);
the EFEM manipulator (7) is suitable for loading and unloading wafers in the main machine table and the cleaning cavity (1).
10. The wafer processing apparatus according to claim 9, wherein the EFEM region (6) comprises a wafer loading station that coincides with the height of the cleaning chamber (1).
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| CN202111665372.2A CN114308905A (en) | 2021-12-31 | 2021-12-31 | Wafer plasma cleaning device and wafer processing equipment |
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| JP2006049367A (en) * | 2004-07-30 | 2006-02-16 | Hitachi Kokusai Electric Inc | Plasma processing apparatus |
| CN203711411U (en) * | 2014-02-20 | 2014-07-16 | 东莞市启天自动化设备有限公司 | Online vacuum plasma washer |
| CN206672894U (en) * | 2017-03-31 | 2017-11-24 | 昆山普乐斯电子科技有限公司 | A kind of vacuum plasma cavity with antistatic bracket |
| JP2018110246A (en) * | 2018-02-14 | 2018-07-12 | シンフォニアテクノロジー株式会社 | Efem(equipment front end module) |
| CN110858555A (en) * | 2018-08-24 | 2020-03-03 | 东京毅力科创株式会社 | Substrate transfer module and substrate transfer method |
| CN211027359U (en) * | 2019-09-23 | 2020-07-17 | 达格测试设备（苏州）有限公司 | Portable plasma cleaning system |
| CN111446153A (en) * | 2020-04-07 | 2020-07-24 | 北京烁科精微电子装备有限公司 | Wafer cleaning equipment |
| CN111463108A (en) * | 2020-04-09 | 2020-07-28 | 北京烁科精微电子装备有限公司 | Wafer cleaning device |
| CN113764308A (en) * | 2020-06-02 | 2021-12-07 | 细美事有限公司 | Apparatus and method for processing substrate |
| CN212760127U (en) * | 2020-07-02 | 2021-03-23 | 昆山索坤莱机电科技有限公司 | Horizontal plasma cleaning etching box |
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