CN114300331A

CN114300331A - Ion implantation system and ion implantation method for large-area target wafer

Info

Publication number: CN114300331A
Application number: CN202210138526.0A
Authority: CN
Inventors: 陈维; 李加; 宋开轮; 蔡春强; 邝斌; 杨�一; 赵露
Original assignee: Zhejiang Xingxin Semiconductor Co ltd
Current assignee: Zhejiang Xingxin Semiconductor Co ltd
Priority date: 2022-02-11
Filing date: 2022-02-15
Publication date: 2022-04-08

Abstract

The invention provides an ion implantation system and an ion implantation method for a large-area target, wherein the ion implantation system comprises an ion beam generation module, a vacuum implantation module, a loading module and an atmosphere transmission module, wherein the ion beam generation module, the vacuum implantation module, the loading module and the atmosphere transmission module are sequentially connected, namely the ion beam generation module is connected to the vacuum implantation module, the vacuum implantation module is connected with the loading module, and the loading module is connected with the atmosphere transmission module. The invention creatively combines a plurality of ion source devices, obtains the ion beam with the required effective height by expanding the coil and the collimating coil, has smaller beam width and higher ion density of the ion beam, and realizes the technology of ion implantation on the large-size glass substrate.

Description

Ion implantation system and ion implantation method for large-area target wafer

Technical Field

The invention belongs to the technical field of semiconductor device manufacturing, and particularly relates to an ion implantation system and an ion implantation method for a large-area target.

Background

Ion implantation has become an important doping technique in semiconductor and microelectronic processes in the electronics industry. Ion implantation refers to the projection of an ion beam onto a solid material (target) and eventually into the solid material.

For example, for a TFT (thin film transistor) array substrate used in a liquid crystal display panel, one of the current development trends is to use a metal Oxide TFT (metal Oxide TFT) such as an IGZO (indium gallium zinc Oxide) thin film. However, the Sheet Resistance (Sheet Resistance) of the pure IGZO film is high, which falls within the range of semiconductors; after ion implantation (e.g., boron ions), the sheet resistance can be greatly reduced to the range of the conductor, thereby obtaining higher electron mobility. However, the required ion implantation dosage is large, for example, 10¹⁵/cm²And a TFT array substrate (a glass substrate with a metal oxide TFT film attached on the surface, which is referred to as a glass substrate for convenience of description in the present invention) using a metal oxide technology is generally large, for example, a G8.5 generation glass substrate is a rectangle with a width of 2200mm and a length of 2500mm, while a currently existing ion implantation apparatus is much smaller than that, for example, a silicon wafer processed by an ion implantation apparatus for a silicon wafer is generally a circle with a diameter of 300 mm. The height for calculating the uniformity of the beam current is called the effective height, for silicon crystalA round ion beam only needs to have an effective height greater than 300 mm; for G8.5 generation glass substrate of metal oxide TFT process in liquid crystal display industry, the effective height of ion beam needs to reach 2200mm or more, and the ion implantation dose is required to be large and the density distribution is required to be uniform.

In addition, the Organic Light Emitting Diode (OLED) display panel also has a problem that ion implantation is required for a glass substrate having an oxide TFT film attached to the surface thereof.

The ion beam current intensity (or the number of ions emitted to the target within unit time) required by ion implantation is increased along with the increase of the area of the target, and for a large-area target, not only the ultrahigh effective height is required, but also the enough beam current intensity is required to be ensured, so that the ion source device is required to generate a great amount of ions, and the current ion implantation equipment can only realize a G6 glass substrate with the effective height of 1500 mm; in the face of a target with a larger size, equipment meeting the requirements cannot be designed and produced, so that the ion implantation of the glass substrate with an oversized size becomes an important technical problem which hinders the technical development of the flat panel display industry and troubles enterprises at home and abroad.

Disclosure of Invention

Based on the problems in the prior art, the present invention provides an ion implantation system and an ion implantation method for a large-area target, which can be applied to glass substrates including but not limited to the G8.5 generation, and can adjust the size of the ion beam by adjusting the arrangement of each part according to the use requirement, so as to meet the ion implantation requirements of glass substrates with larger size from the G4.5 generation (730mm × 920mm) to the G10.5 generation (2940mm × 3370mm) and possibly developed in the future, and other large-area target.

According to a first aspect of the technical scheme of the invention, an ion implantation system for a large-area target is provided, which comprises an ion beam generation module, a vacuum implantation module, a loading module and an atmosphere transmission module, wherein the ion beam generation module, the vacuum implantation module, the loading module and the atmosphere transmission module are sequentially connected, namely the ion beam generation module is connected to the vacuum implantation module, the vacuum implantation module is connected with the loading module, and the loading module is connected with the atmosphere transmission module; the ion beam generating module is used for generating an ion beam with a certain specification, and the ion beam with the certain specification has ion species, ion concentration and ion beam height required by vacuum ion implantation; the vacuum injection module is used for completing ion injection on the glass substrate; the loading module is used for loading or unloading the glass substrate to assist in completing ion implantation of the glass substrate in the vacuum implantation module; the atmosphere transfer module is used for transferring the glass substrate in a normal pressure environment, and taking out or putting back the glass substrate from the glass substrate box through an atmosphere mechanical arm; the vacuum implantation module comprises a Faraday analyzer, which is used for displaying the beam current density and the shape of the ion beam in real time, so as to control the implantation dosage according to the detected data.

The ion beam generating module is used for generating an ion beam with required ion species, ion concentration and ion beam height; the ion beam generation module comprises an ion source combination device, an extraction electrode combination, an analysis magnetic field unit, an expansion coil combination and a collimation coil group, wherein the ion source combination device comprises a plurality of ion source devices, the extraction electrode combination comprises a plurality of extraction electrodes, and the expansion coil combination comprises a plurality of expansion coils; the ion source device is used for generating plasma; the extraction electrode is used for providing an extraction electric field and extracting a plasma beam; the analyzing magnetic field unit is used for screening out impurities in the plasma beam to obtain a purer ion beam of required ions; the expansion coil is used for expanding and stretching the ion beam and increasing the height of the ion beam; the collimation coil group is used for collimating or parallelly stretching the ion beam, so that the traveling directions of ions in the ion beam are all parallel to each other.

Preferably, a plurality of ion source devices arranged side by side are arranged in the arc starting chamber, and the ion source devices generate plasmas. The generated plasma is extracted from an extraction slit of the ion source device to form a plasma beam with a strip-shaped longitudinal section.

Further, the generated plasma beam moves into the analysis magnetic field unit and is influenced by the structure and the shape of the designed analysis magnetic field unit, so that the plasma beam is deflected under the action of Lorentz force.

Furthermore, the analyzing magnetic field unit has the function of screening ions, and obtains a relatively pure ion beam of the required ions at the output end of the analyzing magnetic field unit.

Preferably, the ion beams are stretched by the expansion coils in the process of advancing, the quadrupole magnetic field generated by the expansion coils enables the ion beams to be uniformly and gradually dispersed along the height direction of the ion beams, when the ion beams advance to the collimation coil group, the height of the ion beams is the required height, and the required height is larger than or equal to the width of the glass substrate.

More preferably, the collimating coil assembly collimates the ion beam. The magnetic field generated by the collimating coil assembly deflects the directions of travel of the ions in the ion beam to be parallel to each other.

According to a second aspect of the present invention, there is provided an ion implantation method using the ion implantation system for a large-area target, comprising the steps of:

step S1, setting the initial state of ion implantation: the initial state is the standby preparation state for ensuring the ion implantation system for the large-area target wafer to perform the ion implantation;

step S2, preparing a glass substrate to be subjected to an implantation process;

step S3, grabbing the glass substrate to be injected;

step S4, transferring or transferring the glass substrate to be subjected to the implantation process;

step S5, positioning the glass substrate to be injected;

step S6, an ion beam generating and analyzing step of receiving the ion beam using a faraday analyzer on the electrostatic adsorption arm fixing part of the first vacuum robot arm and performing ion beam analysis;

step S7, an ion implantation step of the glass substrate, which is to repeatedly move the glass substrate along the direction of the first guide rail to scan and complete the ion implantation of the glass substrate;

step S8, post-processing step of ion-implanted glass substrate: and taking out the ion-implanted glass substrate, and transferring and placing the glass substrate into a glass substrate box of the implanted glass substrate.

Compared with the prior art, the ion implantation system and the ion implantation method for the large-area target wafer have the beneficial technical effects that:

1. the ion implantation system and the ion implantation method for the large-area target wafer creatively combine a plurality of ion source devices, obtain parallel ion beams with required effective height (more than 2200mm, for example) through the extraction electrode, the expansion coil and the collimation coil group, have small beam width and high ion density of the ion beams, and realize the technology of carrying out high-dose and uniform ion implantation on large-size glass substrates.

2. The ion implantation system and the ion implantation method for the large-area target wafer can obtain the ion beam with higher ion density under the condition of super large effective height by adjusting the number of the ion source devices.

3. The ion implantation system and the ion implantation method for the large-area target wafer control the cavity of the vacuum implantation module to be smaller in size, are easy to complete the establishment of high vacuum, ensure the purity of ion implantation and greatly improve the yield of ion implantation products.

4. The ion implantation system and the ion implantation method for the large-area target wafer are provided with two loading modules which work in cooperation with the vacuum implantation module and the atmosphere transfer module, and the ion implantation work efficiency is high.

5. The ion implantation system and the ion implantation method for the large-area target wafer have the advantages that the transmission mode adopted in the vacuum implantation module and the atmosphere transmission module is simple and high in automation degree, and high process stability is realized.

6. In the ion implantation system and the ion implantation method for the large-area target slice, the loading module is originally provided with the electrostatic adsorption carrying platform, the mechanical clamping jaw and the carrying platform lifting part to form a lifting and fixing mechanism, and the lifting and fixing mechanism works in cooperation with the vacuum mechanical arm and the atmospheric mechanical arm, so that the conveying effect is good; and the glass substrate is mainly adsorbed by the electrostatic adsorption carrying platform, and is clamped by the mechanical clamping jaw in an auxiliary way, so that the glass substrate holding effect is stable and reliable.

7. In the ion implantation system and the ion implantation method for the large-area target wafer, the ion source module with a small unit is used, so that the ion source module is simple and convenient to maintain; compared with the prior art, the labor hour for maintenance can be greatly reduced by more than 50%.

8. In the ion implantation system and the ion implantation method for the large-area target wafer, the redundancy design of a plurality of ion sources is adopted; even after a single ion source fails, the work of the whole set of equipment cannot be influenced, and the unplanned shutdown is reduced.

9. The ion implantation system for the large-area target slice adopts a multi-ion source design, and compared with a beam line of a single ion source, the mass resolution is better; and a development space is reserved, and different ion species can be implanted into different ion sources when needed in the future.

Drawings

Fig. 1 is a front view of the schematic structure of an ion beam generation module of an ion implantation system for large-area target according to the present invention.

Fig. 2 is a top view of the structure shown in fig. 1.

Fig. 3 is a schematic partial cross-sectional view of an ion beam generation module of an ion implantation system for large area target according to the present invention.

Fig. 4 is a schematic perspective view of an ion beam generation module of an ion implantation system for large-area target according to the present invention.

Fig. 5 is a schematic top cross-sectional view of the structure shown in fig. 4.

Fig. 6 is a schematic perspective view of the ion beam generation module, the vacuum implantation module and the loading module of the ion implantation system for large-area target according to the present invention.

Fig. 7 is a schematic diagram of the internal structure of the ion beam generation module, the vacuum implantation module and the loading module portion of the ion implantation system for large-area target according to the present invention.

FIG. 8 is a schematic diagram of an ion implantation system for large area target processing according to the present invention.

Fig. 9 is a schematic diagram of the vacuum implantation module and the loading module portion of another embodiment of an ion implantation system for large area target wafers in accordance with the present invention.

FIG. 10 is a schematic view of the vacuum injection module and the loading module.

Fig. 11 is a schematic cross-sectional view of the portion of the loading module of fig. 10 in operation in cooperation with a vacuum robot.

Fig. 12 is a partial schematic view of the vacuum robot.

Fig. 13 is a schematic structural diagram of the loading module and the atmospheric robot working in cooperation.

Fig. 14 is a schematic structural view of an atmospheric robot.

The names of the components indicated by reference numerals in the drawings are as follows:

1. an ion beam generation module; 101. an ion source device; 102. an analyzing magnetic field unit; 103. expanding the coils; 104. a collimating coil set; 105. leading out an electrode; 106. a first gate valve; 107. expanding the cavity; 108. a collimating cavity;

2. a vacuum injection module; 201. a first vacuum robot arm; 202. a second vacuum robot arm; 203. a Faraday analyzer; 204. a first guide rail; 205. a second guide rail; 206. an electrostatic adsorption arm fixing part; 207. an electrostatic adsorption arm;

3. a loading module; 301. a first loading module; 302. a second loading module; 303. an inboard gate valve; 304. an outboard gate valve; 305. an electrostatic adsorption stage; 306. a stage lifting unit; 307. a mechanical jaw;

4. an atmospheric transfer module; 401. an atmospheric robot arm; 402. a vacuum adsorption arm fixing part; 403. a vacuum adsorption arm; 404. a vacuum adsorption hole;

5. a glass substrate case; G. a glass substrate.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments, not all embodiments, of the technical solutions. All other embodiments obtained by a person skilled in the art based on the embodiments of the present technical solution without creative efforts shall fall within the protection scope of the present invention. In addition, the scope of the present invention should not be limited to the particular structures or components or the specific parameters set forth below.

Wherein the showings are for the purpose of illustrating the invention only and not for the purpose of limiting the same, and in which there is shown by way of illustration only and not in the drawings in which there is no intention to limit the invention thereto; to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.

The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "front", "rear", etc., based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not an indication or suggestion that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes, and are not to be construed as limiting the present invention, and the specific meaning of the terms may be understood by those skilled in the art according to specific situations.

The invention provides an ion implantation system and an ion implantation method for a large-area target wafer, wherein the large-area target wafer refers to a target wafer with the area not less than 20000mm²Or the target sheets are spliced and laid in a whole or large scale. The basic principle of the invention is as follows: since ion implantation needs to ensure a certain ion implantation density, the required ion beam current intensity (or the number of ions emitted toward the target per unit time) increases as the area of the target increases. In the existing structure, only one ion source device generates ion beam current, but one ion source device cannot generate extremely large amount of ions required by the condition of a large-area target. Therefore, the invention is characterized in that a plurality of ion source devices and corresponding extraction electrodes are arranged, so that a plurality of strands of ion beams are formed, and the ion beams are matched through other modules to ensure that the ion beams are multi-strandedTaken together, an increase in total ion beam intensity is achieved.

The ion beam generating module is used for generating an ion beam with required ion species, ion concentration and ion beam height; the ion beam generation module comprises an ion source combination device and a plurality of ion source devices, wherein the extraction electrode combination comprises a plurality of extraction electrodes, the expansion coil combination comprises a plurality of expansion coils, and the ion source devices are used for generating plasma; the extraction electrode is used for providing an extraction electric field and extracting a plasma beam; the analyzing magnetic field unit is used for screening out impurities in the plasma beam to obtain a purer ion beam of required ions; the expansion coil is used for expanding and stretching the ion beam and increasing the height of the ion beam; the collimation coil group is used for collimating or parallelly stretching the ion beam, so that the traveling directions of ions in the ion beam are all parallel to each other.

step S3, grabbing the glass substrate to be injected;

step S5, positioning the glass substrate to be injected;

The detailed structure of an ion implantation system for a large-area target according to the present invention will be described with reference to the accompanying drawings. The large-area target will be described by taking a display TFT array substrate (glass substrate G) as an example, and the glass substrate G will be described by taking a G8.5 generation glass substrate (rectangular substrate with a width of 2200mm and a length of 2500 mm) and scanning the substrate in the longitudinal direction thereof during implantation.

As shown in fig. 8, the ion implantation system for large-area target of the present invention comprises an ion beam generation module 1, a vacuum implantation module 2, a loading module 3 and an atmosphere transport module 4, wherein the ion beam generation module 1, the vacuum implantation module 2, the loading module 3 and the atmosphere transport module 4 are connected in sequence, that is, the ion beam generation module 1 is connected to the vacuum implantation module 2, the vacuum implantation module 2 is connected to the loading module 3, and the loading module 3 is connected to the atmosphere transport module 4. The ion beam generating module 1 is used for generating an ion beam with a certain specification, wherein the ion beam with the certain specification has ion species, ion concentration (density) and ion beam height required by vacuum ion implantation; the vacuum injection module 2 is used for completing ion injection on the glass substrate G; the loading module 3 is used for loading or unloading the glass substrate G to assist the completion of ion implantation of the glass substrate G in the vacuum implantation module 2; the atmospheric transfer module is used for transferring the glass substrate G in a normal pressure environment, and the glass substrate G is taken out from or put back to the glass substrate cassette 5 by the atmospheric robot 401. The vacuum implantation module 2 includes a faraday analyzer 203, which functions to display the beam density and shape of the ion beam in real time, thereby performing implantation dose control according to the detected data.

Specifically, referring to fig. 1 to 3, the ion beam generating module 1 is used for generating an ion beam having a desired ion species, ion concentration (or ion density) and ion beam height; the ion beam generation module 1 mainly comprises an ion source combination device, an extraction electrode combination, an analysis magnetic field unit, an expansion coil combination and a collimation coil group, wherein the ion source combination device comprises a plurality of ion source devices, the extraction electrode combination comprises a plurality of extraction electrodes, and the expansion coil combination comprises a plurality of expansion coils. An ion source device 101 for generating plasma; an extraction electrode 105 (also referred to as an ion beam diverging extraction lens) for providing an extraction electric field to extract the plasma beam; an analyzing magnetic field unit 102 for screening out impurities in the plasma beam to obtain a relatively pure ion beam of desired ions; the expanding coil 103 is used for expanding and stretching the ion beam and increasing the height of the ion beam; and the collimation coil group 104 is used for collimating or stretching the ion beam in parallel, so that the traveling directions of ions in the ion beam are all parallel to each other.

The operation and principle of the ion beam generation module 1 according to the present invention will be described with reference to fig. 1 and 2. As shown in fig. 2, in the ion implantation system for a large-area target, a plurality of ion source devices 101 arranged side by side are provided in an arc striking chamber, and the ion source devices 101 generate plasma; under the action of the electric field force of the extraction electrode 105 in fig. 3, the generated plasma is extracted from the extraction slit of the ion source device 101, and a plasma beam with a strip-shaped longitudinal section is formed;

the generated plasma beam moves into the analyzing magnetic field unit 102, and the analyzing magnetic field unit 102 with the structure and shape shown in fig. 3 is designed, so that the plasma beam is deflected by the action of lorentz force, only specific ions can pass through the analyzing magnetic field unit 102, and other impurity ions or stray ions can impact and be blocked on the inner side wall of the analyzing magnetic field unit 102 due to the fact that the lorentz force applied to the other impurity ions or stray ions is too large or too small, so that the analyzing magnetic field unit 102 has the function of screening the ions, and a pure ion beam of required ions can be obtained at the output end of the analyzing magnetic field unit 102; the analyzing magnetic field unit 102 has a vertical end surface and an ion entrance port is provided on the vertical end surface, and ions having suitable energy pass through the analyzing magnetic field unit 102 through the ion entrance port; the ion inlet port has a beam expanding channel proximate to an ion emitting source point of the ion source, which facilitates that ions passing through the ion inlet port on the end face can travel along the beam expanding channel.

The analyzing magnetic field unit 102 converges the ion beams to a position far away from the ion beams, i.e. the position of the collimator coil assembly 104.

The ion beams all pass through the expansion coil 103 in the advancing process, the expansion coil 103 stretches the ion beams, the quadrupole magnetic field generated by the expansion coil 103 enables the ion beams to be uniformly and gradually dispersed along the height direction of the ion beams, when the ion beams advance to the collimation coil group 104, the height of the ion beams is the required height, and the required height is larger than or equal to the width of the glass substrate G.

At the convergence of a plurality of ion beams, the collimator coil assembly 104 collimates the ion beams, and the magnetic field generated by the collimator coil assembly 104 deflects the traveling directions of the ions in the ion beams to be parallel to each other.

It should be noted that, because the position where the plurality of ion beams converge is located at a far position, the included angle between the two ion beams located at the two side positions can also be controlled within a small range, thereby ensuring that the ion beams are better in vertical shape, smaller in beam width and larger in ion density.

Referring to fig. 3 to 5, a specific structure of an ion beam generation module 1 is provided, which includes a plurality of (e.g., five) ion source devices 101 arranged side by side, such as an indirectly heated cathode ion source (preferably ihc ion source), and the ion source devices 101 include an arc chamber having an extraction slit. The ion source apparatus 101 is externally provided with a separate extraction electrode 105, for example, one extraction electrode 105 is provided outside the arc striking chamber of each ion source apparatus 101. As shown in fig. 3, a controller is provided on each extraction electrode 105 for controlling the relative position of the extraction electrode 105 and the ion source apparatus 101, so as to obtain the maximum beam intensity from the ion source apparatus 101. Outside a plurality of (preferably five) ion source devices 101 arranged side by side, an analysis magnetic field unit 102, an expansion cavity 107 and a collimation cavity 108 are sequentially connected to one side of the plasma beam, and the analysis magnetic field unit 102, the expansion cavity 107 and the collimation cavity 108 all have vacuum cavity structures. The shape of the expansion cavity 107 is preferably a quadrangular prism with a trapezoidal bottom surface, the expansion coil 103 is fixedly arranged in the cavity of the expansion cavity 107, the expansion coil 103 is preferably a plurality of groups of expansion coils arranged side by side, the number of the expansion coils is the same as that of the ion source device 101, the position of the expansion coil corresponds to each ion beam, and only one ion beam passes through each group of the expansion coils 103. The collimating cavity 108 is preferably substantially rectangular or rectangular, and the collimating coil set 104 is fixedly disposed in the cavity of the collimating cavity 108, and the collimating coil set 104 is located at two sides of the converged ion beam. A plasma flood gun is also provided behind the collimating chamber 108 and functions to remove the charging effect on the glass substrate G in order to eliminate the risk of electrostatic discharge. Preferably, a first gate valve 106 capable of controlling opening and closing is further connected between the analyzing magnetic field unit 102 and the expanding cavity 107, the first gate valve 106 preferably adopts a gate valve including a cylinder and a gate valve plate structure, and the first gate valve 106 is used for closing and isolating the cavities on two sides of the first gate valve when needed, so that maintenance of the ion beam generating module 1 is facilitated. The structures are all connected in a sealing manner, and at least one of the analysis magnetic field unit 102, the expansion cavity 107 and the collimation cavity 108 is provided with a vacuum pumping device, such as a vacuum pump and a vacuum gauge, so that a communicated vacuum cavity is formed inside the analysis magnetic field unit 102, the expansion cavity 107 and the collimation cavity 108 in the working process.

As shown in fig. 6 and 7, a vacuum implantation module 2, for example, a substantially rectangular parallelepiped cavity structure, is connected to the ion beam generation module 1 on the side facing the ion beam traveling direction. The vacuum implantation module 2 is provided therein with a vacuum robot arm, which is used to hold and move the glass substrate G, thereby performing an ion implantation process of the glass substrate G with respect to a scanning path of the ion beam. The vacuum robot includes a transmission mechanism and a holding mechanism for holding the glass substrate G, for example, in the embodiment shown in fig. 9, the vacuum robot is only one first vacuum robot 201, wherein the holding mechanism is, for example, an electrostatic chuck for electrostatic adsorption, or other mechanical structures.

Referring to fig. 9, the vacuum implantation module 2 further includes a faraday analyzer 203 for displaying the beam current density and shape of the ion beam in real time, so as to control the implantation dose according to the detected data. For example, in the embodiment shown in fig. 9, the faraday analyzer 203 is fixedly disposed on a surface of the vacuum implantation module 2 opposite to the ion beam generation module 1, and before the implantation is started, the ion beam is directly incident on the faraday analyzer 203, so that the monitoring is realized.

Referring to fig. 8 and 9, the loading module 3 is connected to the other side of the vacuum injection module 2, the loading module 3 includes a sealable and vacuumized cavity, a vacuuming device, such as a vacuum pump and a vacuum gauge, is connected to the cavity of the loading module 3, an inner side gate valve 303 capable of controlling opening and closing is disposed between the cavity of the loading module 3 and the cavity of the vacuum injection module 2, the other side of the cavity of the loading module 3 is connected to the atmosphere transfer module 4, and an outer side gate valve 304 capable of controlling opening and closing is disposed between the cavity of the loading module 3 and the atmosphere transfer module 4. The loading module 3 is used for converting a vacuum environment into an atmospheric environment and carrying a glass substrate G to be implanted or to be implanted.

As shown in fig. 8, the atmosphere transfer module 4 has a placing section, such as one or more placing tables, for fixedly placing the glass substrate cassette 5. The atmosphere transfer module 4 has at least one atmosphere robot 401 therein for grasping the glass substrate G and transferring the glass substrate G between the glass substrate cassette 5 and the loading module 3. For example, in the embodiment shown in fig. 8, the atmosphere transfer module 4 is provided with a rail, and the atmosphere robot 401 and the rail are movably connected through a controllable telescopic structure, so that the atmosphere robot 401 can move longitudinally along the rail and extend in a direction perpendicular to the rail to extend into the glass substrate cassette 5 or the loading module 3.

Further, preferred embodiments of the present invention will be further described with reference to fig. 7, 10 to 14, specifically as follows.

As shown in fig. 7 and 10, a first guide rail 204 and a second guide rail 205 are fixedly arranged side by side at the bottom inside the cavity of the vacuum implantation module 2, both of which are arranged along a direction perpendicular to the ion beam (preferably, a moving direction of the glass substrate G during scanning implantation), a first vacuum robot 201 and a second vacuum robot 202 are respectively connected to the first guide rail 204 and the second guide rail 205 in a sliding manner, and the first vacuum robot 201 and the second vacuum robot 202 are movable independently of each other. The first vacuum robot 201 and the second vacuum robot 202 have the same structure, as shown in fig. 12, each of the first vacuum robot 201 and the second vacuum robot 202 separately includes an electrostatic adsorption arm fixing portion 206 and an electrostatic adsorption arm 207 (for simplicity of illustration, only one set of the electrostatic adsorption arm fixing portion 206 and the electrostatic adsorption arm 207 is shown in the figure), the electrostatic adsorption arm fixing portion 206 is slidably connected with a rail on which the electrostatic adsorption arm fixing portion 206 is located through, for example, a matched slider structure, and the electrostatic adsorption arm fixing portion 206 is connected with a driving device so as to control the electrostatic adsorption arm fixing portion 206 to move on the rail on which the electrostatic adsorption arm fixing portion is located. The electrostatic adsorption arm fixing portion 206 is provided with a plurality of electrostatic adsorption arms 207 (preferably four electrostatic adsorption arms) in a direction perpendicular to the ion beam, and the plurality of electrostatic adsorption arms 207 are parallel to each other with a space. The electrostatic adsorption arm 207 is configured to hold the glass substrate by electrostatic adsorption, and includes, for example, a plate-shaped base plate, on which a first thin film layer is disposed, and on which at least two sets of electrode arrangements are disposed. And insulating bonding filling layers are arranged among the plurality of groups of electrode arrangements on the first thin film layer and on the upper surfaces of the electrode arrangements, and a second thin film layer is fixed on the bonding filling layers. The insulating adhesive fill fills the gaps between the electrode arrangements and serves to adhesively secure the first membrane layer, the second membrane layer and the electrode arrangements together. The first thin film layer and the second thin film layer are both dielectric films, and the dielectric films are preferably films made of polymer materials, and ceramic thin films may be used. Both ends of the electrode arrangement are connected to an external power supply. The working principle is that an external power supply applies a set voltage to the electrode arrangement to charge the electrode arrangement, and then according to the electrostatic induction principle, the glass substrate G of the second thin film layer close to the electrostatic adsorption arm 207 generates an induction electric dipole and an electric field, so that the glass substrate G is firmly adsorbed on the electrostatic adsorption arm 207 due to the attraction of the positive and negative electric dipoles; when the external power is turned off, the adsorption effect is lost.

For example, taking the first vacuum robot 201 as an example, the lower end of the electrostatic absorption arm fixing portion 206 is provided with a slider structure, and the first guide 204 is provided with a corresponding sliding slot, and the two are slidably connected in a matching manner. Further, as shown in fig. 12, the faraday analyzer 203 is fixedly installed on a surface of the electrostatic adsorption arm fixing part 206 facing the ion beam generation module 1, so that the ion beam is monitored while the vacuum robot arm moves to the loading module 3. The length of the faraday analyzer 203 is larger than the effective height of the ion beam, which is not smaller than the width of the glass substrate G, according to design requirements. For this reason, the lower end of the electrostatic adsorption arm fixing part 206 for fixedly mounting the faraday analyzer 203 needs to be lower than the lower end of the glass substrate G; the positions of the ion beam generation module 1, the first guide rail and the second guide rail, the position where the faraday analyzer 203 is fixed, and the like are matched, so that the faraday analyzer 203 can be ensured to completely receive the ion beam.

As shown in fig. 10 and 11, the loading module 3 includes a first loading module 301 and a second loading module 302, which are identical in structure and each include an inside gate valve 303 and an outside gate valve 304. The first load module 301 and the second load module 302 are positioned to correspond to the first rail 204 and the second rail 205, respectively, such that the first vacuum robot 201 is capable of moving into the first load module 30 and the second vacuum robot 202 is capable of moving into the second load module 302. Each of the first and

second load modules

301 and 302 includes an electrostatic adsorption stage 305, a stage lift 306, and a mechanical gripper 307.

As shown in fig. 11 and 13, the stage lifting unit 306 is, for example, a large flat lifting table, and may be configured by a conventional lifting mechanism, for example, a piston-telescopic type or scissor-fork type lifting mechanism, one surface of which is fixedly connected to the cavity wall of the load module, and the other surface of which is fixedly provided with the electrostatic adsorption stage 305 and the mechanical jaw 307, so that the electrostatic adsorption stage 305 and the mechanical jaw 307 can be raised or lowered together with respect to the inner wall behind the load module.

The electrostatic adsorption stages 305 are a plurality of bar-shaped structures, and the width, number, and position distribution of the bar-shaped structures match with the intervals between the plurality of electrostatic adsorption arms 207, for example, four electrostatic adsorption arms 207 are provided, and three intervals exist in the middle, so that the electrostatic adsorption stages 305 are also three, and are located at the intervals between the four electrostatic adsorption arms 207 in a one-to-one correspondence manner, and the width of the electrostatic adsorption stages 305 is not greater than the corresponding interval. The electrostatic adsorption stage 305 holds the glass substrate by electrostatic adsorption, and has a structure including, for example, a plate-shaped bottom plate on which a first thin film layer is disposed, and at least two sets of electrode arrangements are disposed on the first thin film layer. And bonding filling layers are arranged among the multiple groups of electrode arrangements on the first thin film layer and on the upper surfaces of the electrode arrangements, and a second thin film layer is fixed on the bonding filling layers. The adhesive fill layer fills the gaps between the electrode arrangements and serves to adhesively secure the first film layer, the second film layer, and the electrode arrangements together. The first thin film layer and the second thin film layer are both dielectric films, and the dielectric films are preferably polymer material films. Ceramic dielectric films may also be used. Both ends of the electrode arrangement are connected to an external power supply. The working principle is that an external power supply applies a set voltage to the electrode arrangement to charge the electrode arrangement, and then according to the electrostatic induction principle, the glass substrate G close to the second film layer of the electrostatic adsorption carrying platform 305 generates an induction electric dipole and an electric field, so that the glass substrate G is firmly adsorbed on the electrostatic adsorption carrying platform 305 due to the attraction of the positive and negative electric dipoles; when the external power is turned off, the adsorption effect is lost.

The two mechanical jaws 307 are preferably disposed opposite to each other, and are respectively located above the uppermost electrostatic adsorption stage 305 and below the lowermost electrostatic adsorption stage 305, and are both separated from the adjacent electrostatic adsorption stage 305 by at least one distance corresponding to the width of the electrostatic adsorption arm 207. The two mechanical clamping jaws 307 have the same structure, and may be configured in the prior art, for example, as shown in fig. 11, one end of each mechanical clamping jaw is a clamping jaw connecting portion, the other end of each mechanical clamping jaw is a clamping jaw clamping portion, the clamping jaw connecting portion is fixedly connected to the stage lifting portion 306, the clamping jaw clamping portion is used for clamping the glass substrate G, and a distance between the clamping jaw clamping portions of the upper and lower mechanical clamping jaws 307 is matched with a width of the glass substrate G. The clamping jaw clamping part comprises two clamping jaws which are controlled by a machine to move relatively, preferably, the two clamping jaws are both in a plate bar shape, and the length of the clamping jaw is similar to that of the glass substrate G, so that the clamping can be stably carried out. For example, a glass substrate G may be clamped by a plurality of small mechanical clamping jaws in parallel, and the auxiliary clamping and fixing effect may be achieved by any specific structure and arrangement.

In the present invention, the thickness of the glass substrate G is as thin as about 0.5mm to 1.0 mm. Therefore, in order to stably hold the glass substrate G on the vacuum robot and the atmospheric robot 401, the edge of the glass substrate G needs to be closer to the edge of the robot, but after the robot transfers the glass substrate G to a loading module 3, the portion of the loading module 3 holding the glass substrate G needs to be closer to the edge of the glass substrate G. Therefore, in the loading module 3 of the preferred embodiment, the glass substrate G is mainly adsorbed by the electrostatic adsorption stage 305 with a large contact area, and the mechanical clamping jaws 307 provide auxiliary fixing for the edge of the glass substrate G, so that the glass substrate G is stably held in the loading module 3 in cooperation with the auxiliary fixing, and the glass substrate G is not bent, cracked or displaced due to disturbance of gas during the evacuation and inflation process for switching the vacuum state.

In the atmosphere transfer module 4, an atmosphere robot 401 is fixedly provided. As shown in fig. 14, the transmission part of the atmospheric robot 401 employs a multi-axis robot; preferably, a six-axis mechanical arm structure is adopted, and the six-axis mechanical arm has six degrees of freedom; the end of the six-axis mechanical arm structure is fixedly connected with a vacuum adsorption arm fixing part 402, a plurality of vacuum adsorption arms 403 are arranged on the vacuum adsorption arm fixing part 402, and the plurality of vacuum adsorption arms 403 are parallel to each other and have intervals; the width, number, and positional distribution of the vacuum suction arms 403 match the intervals between the plurality of electrostatic suction stages 305, and for example, the width, number, and positional distribution of the vacuum suction arms 403 are the same as those of the electrostatic suction arms 207. Each vacuum adsorption arm 403 is provided with a plurality of vacuum adsorption holes 404, and all the vacuum adsorption holes 404 are positioned on the same side; the vacuum suction holes 404 are all communicated with a vacuum pumping device, such as a vacuum generator, through a pipeline, for example, the vacuum suction arm 403 is a hollow plate-shaped cavity, one side wall of the vacuum suction arm is provided with a plurality of through vacuum suction holes 404, the other side wall of the vacuum suction arm is also provided with a through air suction hole, and the vacuum suction arm is hermetically connected with the vacuum pumping device. After the vacuum pumping device is turned on, negative pressure is generated in the vacuum suction hole 404, so that the glass substrate G in front of the vacuum suction hole 404 is firmly sucked.

The overall working steps of the ion implantation system for the large-area target in the preferred embodiment of the invention are as follows:

step S1, setting the initial state of ion implantation: the initial state is a standby state in which the ion implantation system for a large-area target is ensured to perform ion implantation.

The initial state is, for example, the inner gate valve 303 and the outer gate valve 304 of the first loading module 301 and the second loading module 302 are both closed, the first loading module 301 and the second loading module 302 are preferably in a rough vacuum state, which is a vacuum state close to that required for production, for example, a vacuum degree of 10^-1torr to 10^-5torr; the ion beam generation module 1 and the vacuum implantation module 2 which are communicated are pumped to a required high vacuum degree, for example, 10^-4torr to 10^-6In torr, the mechanical gripper 307 is in an open state, and the stage lifter 306 is in a contracted (lowered) state.

Step S2, preparing a glass substrate G to be subjected to implantation processing: fixedly placing glass substrate boxes 5 on a placing part of the atmosphere transmission module 4, wherein at least one glass substrate box 5 is used for containing a glass substrate G to be subjected to injection treatment, and at least one other glass substrate box 5 is empty and is used for containing the glass substrate G subjected to injection treatment;

step S3, grasping the glass substrate G to be subjected to the implantation process: the air mechanical arm 401 moves, the vacuum adsorption arm 403 moves to the position where the glass substrate G to be grabbed is close to the glass substrate box 5, and the vacuum adsorption hole 404 sucks the glass substrate G to make the glass substrate G to be grabbed adsorbed on the vacuum adsorption arm 403 by the atmospheric pressure to complete grabbing; the atmospheric mechanical arm 401 may adopt a 6-axis mechanical arm, or may adopt a hydraulic drive type mechanical arm, an electric drive type mechanical arm, a mechanical arm and a mechanical arm; and preferably, a point position control mechanical arm and a continuous track control mechanical arm.

Step S4, transferring or transferring the glass substrate G to be subjected to the implantation process: the vacuum suction arm 403 holding the glass substrate G moves in front of the outer gate valve 304 on the first loading module 301 and is turned over to be substantially vertical (at an angle of 80 to 90 degrees from the horizontal plane so that the glass substrate G and the vacuum suction arm 403 can enter the loading module 3); it should be noted that the moving and turning processes are preferably completed simultaneously, and may be completed in two steps; wherein the loading module 3 breaks the vacuum by opening the outer gate valve; or the outer side door valve of the loading module 3 is a vacuum electromagnetic valve with vacuum breaking performance, namely the electromagnetic valve is opened to vacuumize and suck the sucker when the power is on, and after the power is off, the air enters the air charging hole at the upper part of the coil of the electromagnetic valve, and the sucker is put down after the vacuum is broken.

Step S5, the glass substrate G to be subjected to the implantation process is positioned, and the load module is evacuated, followed by opening the inner gate valve: the glass substrate G to be subjected to the implantation process is taken out from the glass substrate cassette 5, and is transferred and positioned at the position to be ion implanted. The method specifically comprises the following steps:

the outer gate valve 304 of the first loading module 301 is opened, the vacuum suction arm 403 holding the glass substrate G is moved into the first loading module 301, and the glass substrate G is positioned at the middle position between the upper and lower mechanical jaws 307 and at a position corresponding to the electrostatic suction stage 305, in the gap between the electrostatic suction stage 305 and the mechanical jaws 307;

the stage lifting part 306 is lifted, the electrostatic adsorption stage 305 and the mechanical clamping jaw 307 are lifted along with the lifting, the electrostatic adsorption stage 305 is electrified to be in contact with the back surface of the glass substrate G, the glass substrate G is adsorbed by the electrostatic adsorption stage 305 through electrostatic adsorption, and the mechanical clamping jaw 307 is operated to clamp and fix the upper side and the lower side of the glass substrate G;

the vacuum suction holes 404 (connected vacuum devices) of the vacuum suction arms 403 stop working, the glass substrate G is released, the stage lift 306 further rises by a distance to ensure that the vacuum suction arms 403 are separated from the glass substrate G and give sufficient moving space to the glass substrate G, and then the vacuum suction arms 403 move out of the first loading module 301;

the outer gate valve 304 of the first loading module 301 is closed, the vacuum pumping means connected to the first loading module 301 reduces the degree of vacuum inside the first loading module 301 to be similar to the degree of vacuum in the vacuum injection module 2, and then the inner gate valve 303 of the first loading module 301 is opened;

the first vacuum robot 201 moves into the first loading module 301, and the electrostatic adsorption arm 207 penetrates between the glass substrate G and the stage lift 306, and into the space between the electrostatic adsorption stage 305 and the mechanical gripper 307;

the stage elevating unit 306 contracts, and the electrostatic adsorption stage 305 and the mechanical chuck 307 are lowered accordingly, so that the glass substrate G thereon gradually approaches and contacts the electrostatic adsorption arm 207;

the electrostatic adsorption arm 207 is energized to adsorb the glass substrate G;

the electrostatic adsorption stage 305 stops energization, and the mechanical gripper 307 releases the glass substrate G; the stage lifting unit 306 further lowers a distance to ensure that the electrostatic adsorption stage 305 is separated from the glass substrate G, ensure that the glass substrate G is adsorbed only by the electrostatic adsorption arm 207 of the first vacuum robot 201, and give sufficient movement space to the electrostatic adsorption arm 207;

step S6, an ion beam generation and analysis step of receiving the ion beam using the faraday analyzer 203 on the electrostatic adsorption arm fixing part 206 of the first vacuum robot 201 and performing ion beam analysis;

step S7, ion implantation step of the glass substrate G: under the condition that the ion beam is analyzed to meet the requirement through the Faraday analyzer 203, the first vacuum mechanical arm 201 repeatedly moves the glass substrate G along the direction of the first guide rail 204 at a corresponding speed for scanning according to the calculation result of the dose controller, and ion implantation is completed;

step S8, post-processing step of ion-implanted glass substrate G: the ion-implanted glass substrate G is taken out and transferred to the glass substrate G cassette 5 in which the ion-implanted glass substrate G is placed. The method comprises the following steps:

the vacuum robot 201 moves to place the glass substrate G after the injection back into the first loading module 301;

the electrostatic adsorption arm 207 stops energizing, the glass substrate G is released, the stage lifting portion 306 further lifts a distance to ensure that the electrostatic adsorption arm 207 is separated from the glass substrate G and give enough movement space to the glass substrate G, and then the vacuum adsorption arm 403 moves out of the first loading module 301;

the inner side gate valve 303 of the first loading module 301 is closed, and the first loading module 301 is released from the vacuum state, so that the air pressure therein is close to the air pressure of the atmospheric transfer module 4, i.e., the normal pressure, which is about one atmosphere;

the outer gate valve 304 of the first loading module 301 is opened, the atmospheric robot 401 is operated, the vacuum suction arm 403 is moved to a position between the glass substrate G and the stage lifter 306 in the first loading module 301, and the electrostatic suction stage 305 and the mechanical gripper 307 are lowered until the glass substrate G comes into contact with the vacuum suction arm 403; the vacuum adsorption arm 403 operates to adsorb the glass substrate G; the electrostatic adsorption stage 305 and the mechanical chuck 307 release the glass substrate G, and then further lower a distance; the vacuum suction arm 403 is moved out, and the glass substrate G is moved into the glass substrate G cassette 5 for placing the glass substrate G for which the injection has been completed, thus completing the injection of one glass substrate G, and so forth.

In the ion implantation system for the large-area target wafer, two sets of vacuum mechanical arms and loading modules are preferably arranged, and the ion implantation system has the advantages that: the redundancy and dislocation design is adopted, the working efficiency can be greatly improved compared with the situation that only one group of vacuum mechanical arms and loading modules are provided, after one glass substrate G to be injected is placed into the first loading module 301 by the atmospheric mechanical arm 401, another glass substrate G to be injected can be grabbed from the glass substrate G box 5 and placed into the second loading module 302; the second vacuum robot 202 moves along the second guide rail 205, thereby gripping, scanning, and replacing the glass substrate G in the second loading module 302. The specific process is similar to the first loading module 301 and the first vacuum robot 201, and is not described again. That is, the first vacuum robot 201 and the second vacuum robot 202 alternately perform the scanning operation, and the first loading module 301 and the second loading module 302 (and the atmospheric transfer module 4) correspondingly cooperate with the robots to load the glass substrates G; for example, when the first robot 201 performs scanning, the second loading module 302 performs vacuum adjustment, so that the mismatch design significantly improves the working efficiency.

In the ion implantation system for a large-area target according to the present invention, a further preferable design is such that the electrostatic adsorption stage 305 and the mechanical chuck 307 are lifted and lowered by the stage lifting unit 306, thereby realizing a quick and stable transfer process of the glass substrate G; after the glass substrate G is obtained, the electrostatic adsorption stage 305 and the mechanical gripper 307 are further raised, so that the glass substrate G is separated from other mechanical arms; the glass substrate G is further lowered after being released, so that it is separated from the glass substrate G. Therefore, the glass substrate G is only held by a correct device when the glass substrate G starts to move, the interference of sticking and other mistaken collision is avoided, and the reliability of the moving and conveying process is high.

In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An ion implantation system for a large-area target is characterized by comprising an ion beam generation module, a vacuum implantation module, a loading module and an atmosphere transmission module, wherein the ion beam generation module, the vacuum implantation module, the loading module and the atmosphere transmission module are sequentially connected, namely the ion beam generation module is connected to the vacuum implantation module, the vacuum implantation module is connected with the loading module, and the loading module is connected with the atmosphere transmission module; the ion beam generating module is used for generating an ion beam with a certain specification, and the ion beam with the certain specification has ion species, ion concentration and ion beam height required by vacuum ion implantation; the vacuum injection module is used for completing ion injection on the glass substrate; the loading module is used for loading or unloading the glass substrate to assist in completing ion implantation of the glass substrate in the vacuum implantation module; the atmosphere transfer module is used for transferring the glass substrate in a normal pressure environment, and taking out or putting back the glass substrate from the glass substrate box through an atmosphere mechanical arm; the vacuum implantation module comprises a Faraday analyzer, which is used for displaying the beam current density and the shape of the ion beam in real time, so as to control the implantation dosage according to the detected data.

2. The ion implantation system of claim 1, wherein the ion beam generation module is configured to generate an ion beam having a desired ion species, ion concentration, and ion beam height; the ion beam generation module comprises an ion source combination device, an extraction electrode combination, an analysis magnetic field unit, an expansion coil combination and a collimation coil group, wherein the ion source combination device comprises a plurality of ion source devices, the extraction electrode combination comprises a plurality of extraction electrodes, and the expansion coil combination comprises a plurality of expansion coils; the ion source device is used for generating plasma; the extraction electrode is used for providing an extraction electric field and extracting a plasma beam; the analyzing magnetic field unit is used for screening out impurities in the plasma beam to obtain a purer ion beam of required ions; the expansion coil is used for expanding and stretching the ion beam and increasing the height of the ion beam; the collimation coil group is used for collimating or parallelly stretching the ion beam, so that the traveling directions of ions in the ion beam are all parallel to each other.

3. The ion implantation system of claim 2, wherein the arc chamber comprises a plurality of ion source devices disposed side-by-side, the ion source devices generating a plasma.

4. The ion implantation system of claim 3, wherein the generated plasma is extracted from an extraction slit of the ion source device to form a plasma beam having a longitudinal section of a stripe shape.

5. The ion implantation system of claim 4, wherein the generated plasma beam moves into the analyzing magnetic field unit, and is deflected by Lorentz force due to the structure and shape of the analyzing magnetic field unit.

6. The ion implantation system of claim 4, wherein the analyzing magnetic field unit has a function of screening ions to obtain a relatively pure ion beam of desired ions at an output end of the analyzing magnetic field unit.

7. The ion implantation system of claim 4, wherein the ion beams are stretched by the expansion coils during the process of traveling, the quadrupole magnetic field generated by the expansion coils gradually disperses the ion beams along the height direction of the ion beams uniformly, and when the ion beams travel to the collimating coil group, the height of the ion beams is the required height, and the required height is greater than or equal to the width of the glass substrate.

8. An ion implantation system for large area targets according to any of claims 4 to 7, wherein the collimating coil assembly collimates the ion beam.

9. The ion implantation system of claim 8, wherein the magnetic field generated by the set of collimating coils deflects ions in the ion beam in directions parallel to each other.

10. An ion implantation method using the ion implantation system for a large-area target of any one of claims 1 to 9, comprising the steps of:

step S3, grabbing the glass substrate to be injected;

step S5, positioning the glass substrate to be injected;