CN114287060A - 像素结构及像素结构的制造方法 - Google Patents
像素结构及像素结构的制造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
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- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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Abstract
一种像素结构(2003)及像素结构(2003)的制造方法，像素结构(2003)包括：调制栅极组，调制栅极组包括：设置在衬底(201)第一表面(2011)的至少一个第一调制栅极(PGA)和至少一个第二调制栅极(PGB)，第二调制栅极(PGB)和第一调制栅极(PGA)分别被互补调制；以及衬底(201)，包括：两个载流子存储区域，分别在第一方向上位于衬底(201)的两侧，第一方向为平行于第一表面(2011)的方向；以及载流子收集区域(202)，在第一方向上位于两个载流子存储区域之间，且与调制栅极组接触于第一表面(2011)，其中载流子收集区域(202)与两个载流子存储区域的掺杂类型相同，载流子收集区域(202)与衬底(201)的掺杂类型相反，载流子收集区域(202)的掺杂浓度大于衬底(201)的掺杂浓度。
Description
PCT国内申请，说明书已公开。
Claims (24)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/105235 WO2021046730A1 (zh) | 2019-09-10 | 2019-09-10 | 像素结构及像素结构的制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114287060A true CN114287060A (zh) | 2022-04-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980099784.9A Pending CN114287060A (zh) | 2019-09-10 | 2019-09-10 | 像素结构及像素结构的制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP4024458A4 (zh) |
| CN (1) | CN114287060A (zh) |
| WO (1) | WO2021046730A1 (zh) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101543664B1 (ko) * | 2008-12-08 | 2015-08-12 | 삼성전자주식회사 | 픽셀 어레이 및 이를 포함하는 입체 영상 센서 |
| DE102009037596B4 (de) * | 2009-08-14 | 2014-07-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Pixelstruktur, System und Verfahren zur optischen Abstandsmessung sowie Steuerschaltung für die Pixelstruktur |
| DE102011079589A1 (de) * | 2010-08-11 | 2012-02-16 | Samsung Electronics Co., Ltd. | Einheitspixel für ein Photodetektionsbauelement |
| DE102013018789A1 (de) * | 2012-11-29 | 2014-06-05 | Infineon Technologies Ag | Steuern lichterzeugter Ladungsträger |
| US10121928B2 (en) * | 2014-07-01 | 2018-11-06 | Sensl Technologies Ltd. | Semiconductor photomultiplier and a process of manufacturing a photomultiplier microcell |
| DE102016208343B4 (de) * | 2016-05-13 | 2020-02-27 | Infineon Technologies Ag | Optische Sensoreinrichtung und Verfahren zur Herstellung der optischen Sensoreinrichtung |
| BE1025050B1 (fr) * | 2016-08-12 | 2018-10-12 | Softkinetic Sensors Nv | Démodulateur doté d’une photodiode pincée génératrice de porteurs et procédé de fonctionnement associé |
| DE102017202754B4 (de) * | 2016-10-14 | 2022-08-04 | Infineon Technologies Ag | Optische Sensoreinrichtung und Verfahren zur Ansteuerung der optischen Sensoreinrichtung |
| CN108566524B (zh) * | 2018-01-31 | 2023-10-27 | 光微信息科技(合肥)有限公司 | 像素单元、图像传感器芯片、成像系统、像素单元的形成方法以及深度信息测算方法 |
| CN109346553B (zh) * | 2018-08-22 | 2020-07-31 | 宁波飞芯电子科技有限公司 | 增强近红外量子效率的钳位型光电二极管及其制备方法 |
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2019
- 2019-09-10 EP EP19944764.0A patent/EP4024458A4/en active Pending
- 2019-09-10 WO PCT/CN2019/105235 patent/WO2021046730A1/zh unknown
- 2019-09-10 CN CN201980099784.9A patent/CN114287060A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021046730A1 (zh) | 2021-03-18 |
| EP4024458A1 (en) | 2022-07-06 |
| EP4024458A4 (en) | 2022-08-31 |
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