CN114284667A - Low-pass filtering transmission structure based on slip symmetric artificial surface plasmons - Google Patents
Low-pass filtering transmission structure based on slip symmetric artificial surface plasmons Download PDFInfo
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- CN114284667A CN114284667A CN202111560175.4A CN202111560175A CN114284667A CN 114284667 A CN114284667 A CN 114284667A CN 202111560175 A CN202111560175 A CN 202111560175A CN 114284667 A CN114284667 A CN 114284667A
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Abstract
The invention discloses a low-pass filtering transmission structure based on sliding symmetric artificial surface plasmons, which is an axisymmetric structure and comprises a dielectric substrate, an upper metal conductor layer and a lower metal conductor layer, wherein the upper metal conductor layer and the lower metal conductor layer are respectively positioned on the front side and the back side of the dielectric substrate; the lower metal conductor layer is provided with a lower artificial surface plasmon transmission structure, a lower transition matching structure and a metal ground from the middle to two sides; the upper artificial surface plasmon transmission structure and the lower artificial surface plasmon transmission structure are symmetrically slid along the transverse axis to form an up-down sliding symmetrical artificial surface plasmon transmission structure. The invention eliminates the original forbidden bands of the artificial surface plasmon fundamental mode and the first high-order mode by a double-layer sliding symmetry technology, realizes the degeneracy of two modes, improves the cut-off frequency of the fundamental mode, and further expands the bandwidth of a transmission structure.
Description
Technical Field
The invention relates to a novel slow wave transmission line technology, in particular to a low-pass filtering transmission structure based on sliding symmetric artificial surface plasmons, which can be applied to the technical fields of communication, integrated circuits and the like.
Background
The surface plasmon can be used for designing photoelectric devices due to the characteristic that the surface plasmon can break through the diffraction limit in the light wave frequency band, and has important application in the aspect of integrated optical circuits, so that the surface plasmon is deeply researched. At microwave frequencies, the metal loses its plasmon properties, and surface plasmons cannot be excited to exhibit conductor properties. Researchers obtain surface electromagnetic waves similar to surface plasmons in a light wave frequency band in the modes of periodic via holes of a three-dimensional structure, periodic grooves etched in a planar structure and the like, and the surface electromagnetic waves are called artificial surface plasmons. The two-dimensional planar metal conductor periodic slotted structure forms an artificial surface plasmon transmission line, and compared with the traditional microstrip line, the artificial surface plasmon transmission line has stronger constraint and local capability on electromagnetic waves and more flexible dispersion regulation and control characteristics.
However, the planar artificial surface plasmon mode has a strong frequency dependence on the unit dispersion period, which limits the bandwidth of a two-dimensional device, and further hinders the development of the planar artificial surface plasmon for an integrated circuit. The high-symmetry slip symmetric periodic structure can break the forbidden bands of the artificial surface plasmon fundamental mode and the high-order mode, and can regulate and control electromagnetic waves in a large range.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide a low-pass filtering transmission structure based on slip symmetric artificial surface plasmons, which combines two modes of the artificial surface plasmons through the characteristics of the slip symmetric artificial surface plasmons.
The technical scheme is as follows: the invention relates to a low-pass filtering transmission structure based on sliding symmetric artificial surface plasmons, which comprises an upper metal conductor layer and a lower metal conductor layer, wherein the upper metal conductor layer is positioned on the upper surface of a dielectric substrate, the lower metal conductor layer is positioned on the lower surface of the dielectric substrate, and the upper metal conductor layer and the lower metal conductor layer are both in an axisymmetric structure;
the upper metal conductor layer comprises an upper artificial surface plasmon transmission structure positioned in the middle, and two ends of the upper artificial surface plasmon transmission structure are respectively connected with an upper transition matching structure and a metal microstrip line in sequence;
the lower metal conductor layer comprises a lower artificial surface plasmon transmission structure positioned in the middle, and two ends of the lower artificial surface plasmon transmission structure are respectively connected with the lower transition matching structure and the metal ground in sequence;
the upper artificial surface plasmon transmission structure and the lower artificial surface plasmon transmission structure are symmetrically slid along the transverse axis to form an up-down sliding symmetrical artificial surface plasmon transmission structure. The base mode and the first high-order mode in the dispersion characteristic of the up-and-down sliding symmetric artificial surface plasmon transmission structure form degeneracy, and therefore the cut-off frequency of the transmission main mode is improved. The upper-lower sliding symmetrical artificial surface plasmon transmission structure supports artificial surface plasmon slow wave transmission, the metal microstrip line supports quasi-TEM wave transmission, the middle of the upper artificial surface plasmon transmission structure and the metal microstrip line is connected by an upper transition matching structure, the lower artificial surface plasmon transmission structure is connected with the metal ground by a lower transition matching structure, the quasi-TEM wave is smoothly converted into artificial surface plasmon slow wave through the upper transition matching structure and the lower transition matching structure, momentum matching of two waves is realized, and efficient transmission is further realized.
Preferably, the upper layer artificial surface plasmon transmission structure and the lower layer artificial surface plasmon transmission structure both comprise a plurality of periodically arranged rectangular metal units with the same size, and the upper layer artificial surface plasmon transmission structure and the lower layer artificial surface plasmon transmission structure are staggered by half the period length of the rectangular metal units along the transverse axis.
Preferably, the cut-off frequency of the dispersion unit can be changed by changing the height and/or width of the rectangular metal unit, so as to regulate and control the transmission of the electromagnetic waves.
Preferably, the upper transition matching structure comprises a plurality of metal rectangular units which are arranged periodically and have gradient heights, and the heights of the metal rectangular units are increased in a gradient manner from the metal microstrip lines at two ends to the upper artificial surface plasmon transmission structure in the middle.
Preferably, the lower transition matching structure comprises a plurality of periodically arranged rectangular groove units with gradient depth, and the depth of the rectangular groove units is increased from the metal grounds at two ends to the direction gradient of the middle lower artificial surface plasmon transmission structure.
Preferably, the metallic ground comprises a high-k line ground connected to the underlying transitional matching structure for gradient impedance matching.
Preferably, the metal microstrip line is connected with the SMA joint inner core to perform microstrip excitation port feeding, and the metal ground is connected with a ground pin of the SMA interface.
Preferably, the upper metal conductor layer and the lower metal conductor layer are manufactured by a dielectric substrate double-sided copper-clad technology.
Preferably, the dielectric substrate is a flexible plate.
Has the advantages that: compared with the prior art, the invention has the beneficial effects that: (1) the modern circuit integration is easy by adopting a double-layer transmission structure; (2) the degeneracy is formed by two modes of the up-down sliding symmetrical artificial surface plasmon transmission structure, the cut-off frequency of the artificial surface plasmon main mode is improved, and the working bandwidth is expanded; (3) the upper and lower layers of gradient change transition matching structures enable the quasi-TEM waves to be effectively matched with the artificial surface plasmon waves, and the requirement of high transmission efficiency of a circuit is met; (4) the design and processing are simple, and the method can be used for designing devices such as filters, couplers and the like in microwave and millimeter wave frequency bands; (5) the invention can also adopt flexible plates for processing, is easy to be conformal and realizes the transmission of conformal structures in the miniature circuit.
Drawings
FIG. 1 is a three-dimensional schematic diagram of a low pass filtered transmission architecture of the present invention;
FIG. 2 is a schematic diagram of the front and back sides of a low pass filter transmission structure according to the present invention;
FIG. 3 is a graph comparing the dispersion curves of a microstrip line, a non-slip symmetric artificial surface plasmon structure and a slip symmetric artificial surface plasmon unit structure according to the present invention;
FIG. 4 is a transmission coefficient diagram of the sliding symmetric low-pass filtering transmission structure and the non-sliding symmetric structure according to the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
As shown in fig. 1 and fig. 2, the low-pass filtering transmission structure based on the slip symmetry artificial surface plasmon of the present invention is an axisymmetric structure, and includes an upper metal conductor layer 1, a dielectric substrate 2 and a lower metal conductor layer 3, wherein the upper metal conductor layer 1 is etched on the front surface of the dielectric substrate 2 in a close manner, and the lower metal conductor layer 3 is etched on the back surface of the dielectric substrate 2 in a close manner. The upper layer metal conductor and the lower layer metal conductor can be manufactured by a technology of coating copper on two sides of the dielectric substrate.
As shown in fig. 2, the upper metal conductor layer 1 is an axisymmetric structure, and includes: the device comprises a metal microstrip line 11, an upper-layer transition matching structure 12 and an upper-layer artificial surface plasmon transmission structure 13, wherein the upper-layer artificial surface plasmon transmission structure 13 is positioned in the middle, and two ends of the upper-layer artificial surface plasmon transmission structure are respectively connected with the metal microstrip line 11 through the upper-layer transition matching structure 12; lower floor's metallic conductor layer 3 is the axisymmetric structure, includes: the transmission structure comprises a metal ground 31, a lower transition matching structure 32 and a lower artificial surface plasmon transmission structure 33, wherein the lower artificial surface plasmon transmission structure 33 is located in the middle, and two ends of the lower artificial surface plasmon transmission structure are respectively connected with the metal ground 31 through the lower transition matching structure 32. The upper artificial surface plasmon transmission structure 13 and the lower artificial surface plasmon transmission structure 33 are formed by periodically arranging rectangular metal units with the same size, and the upper layer and the lower layer are staggered by half the period length of the rectangular metal units along the transverse axis to form an up-down slip symmetric artificial surface plasmon transmission structure. The upper-layer transition matching structure 12 is composed of metal rectangular units with different heights and gradient changes, and the metal rectangular units are gradually increased in height from the metal microstrip line 11 until the heights gradually change to the height of the rectangular metal units of the upper-layer artificial surface plasmon transmission structure 13 to form gradients. The lower transition matching structure 32 is composed of rectangular grooves with different depths and gradient changes, and the depth gradient of the rectangular grooves is increased from the metal ground 31 until the depth gradually changes to form gradient with the rectangular grooves of the lower artificial surface plasmon transmission structure 33. After the upper transition matching structure 12 slides along the horizontal axis for half of the period length of the metal rectangular unit, the metal rectangular unit corresponds to the metal protrusion between two adjacent rectangular grooves of the lower transition matching structure 32 up and down. The metal ground 31 is formed of a metal made of a noble wire to form a gradient impedance change. The metal microstrip line 11 is connected with the SMA connector inner core to perform microstrip excitation port feeding, and the metal ground 31 is connected with a grounding pin of the SMA interface.
The upper-lower slip symmetric artificial surface plasmon transmission structure composed of the upper-layer artificial surface plasmon transmission structure 13 and the lower-layer artificial surface plasmon transmission structure 33 supports artificial surface plasmon slow wave transmission, the metal microstrip line 11 supports quasi-TEM wave transmission, the upper-layer artificial surface plasmon transmission structure 13 is connected with the metal microstrip line 11 through the upper-layer transition matching structure 12, the lower-layer artificial surface plasmon transmission structure 33 is connected with the metal ground 31 through the lower-layer transition matching structure 32, the quasi-TEM wave is smoothly converted into artificial surface plasmon slow waves through the upper-layer transition matching structure 12 and the lower-layer transition matching structure 32, momentum matching of two waves is realized, and efficient transmission is further realized.
In an alternative example of the present invention, fig. 3 is a dispersion curve graph comparing a microstrip line and a slip symmetric artificial surface plasmon transmission structure of the present invention, and in order to highlight the characteristics of the slip symmetric artificial surface plasmon transmission structure of the present invention, fig. 3 also shows a dispersion curve graph of a non-slip symmetric artificial surface plasmon structure, wherein the non-slip symmetric artificial surface plasmon structure is completely symmetric and has no dislocation, i.e., an upper layer artificial surface plasmon transmission structure and a lower layer artificial surface plasmon transmission structure. It can be seen that when the artificial surface plasmon transmission structures of the upper layer and the lower layer are in slip symmetry, that is, when a slip (dislocation) of half a unit period length is introduced, the cut-off frequency of the mode I (fundamental mode in dispersion characteristics) of the transmission structure is raised, the original forbidden band between the fundamental mode (mode I) and the first high-order mode (mode II) in dispersion characteristics is eliminated, and the degeneracy of the modes is realized by the two lowest-order modes (mode I and mode II). Therefore, the transmission cutoff frequency of the slip symmetric structure is greatly increased compared to the non-slip symmetric structure.
In an alternative embodiment of the present invention, in order to show the specific advantages of the sliding symmetric transmission structure of the present invention compared with the conventional art, fig. 4 is a transmission coefficient diagram of the sliding symmetric low-pass filtering transmission structure and the non-sliding symmetric transmission structure of the present invention. It can be seen that: due to the degeneracy of the mode of the slip symmetric transmission structure, the cut-off frequency of the low-pass filtering transmission structure is increased, and the working bandwidth is greatly expanded. Furthermore, the low-pass filter structure has a very steep falling edge at the cut-off frequency.
In an alternative embodiment of the present invention, when the height of the rectangular metal unit is increased, the cut-off frequency of the dispersion unit is decreased, and then the high-frequency cut-off frequency of the low-pass filtering transmission structure is decreased correspondingly; when the width of the rectangular metal unit is reduced, the cut-off frequency of the dispersion unit is increased, and then the high-frequency cut-off frequency of the low-pass filtering transmission structure is correspondingly increased. Therefore, the cutoff frequency of the dispersion unit can be changed by changing the height, the width and the like of the rectangular metal unit in the slip symmetric artificial surface plasmon transmission structure, and the transmission of electromagnetic waves can be regulated and controlled in a larger frequency range; furthermore, the invention can be applied to different frequency bands such as microwave, millimeter wave and the like.
The present invention is not limited to the above-described embodiments, and any other modifications made without departing from the spirit and principle of the present invention are within the scope of the present invention.
In summary, in the low-pass filtering transmission structure based on the slip symmetric artificial surface plasmons provided by the invention, in the transmission structure, the upper artificial surface plasmon transmission structure and the lower artificial surface plasmon transmission structure are dislocated by half the period length of the rectangular metal unit along the horizontal axis to form a double-layer slip symmetric artificial surface plasmon transmission structure, and the double-layer slip symmetric artificial surface plasmon structure eliminates the band gap between the fundamental mode (mode I) and the first high-order mode (mode II) in the dispersion characteristic of the artificial surface plasmon structure, so that the working mode of the artificial surface plasmons is expanded, and the electromagnetic waves can be regulated and controlled in a larger frequency range, and further the working bandwidth can be expanded. Compared with the traditional non-slip symmetric structure, the double-layer slip symmetric artificial surface plasmon transmission structure has great advantages in the aspects of regulating and controlling the mode and the propagation speed of electromagnetic waves in a large range (the cutoff frequency of a main mode, namely a propagation mode, of a dispersion curve of the traditional non-slip symmetric structure is greatly increased, namely the propagation speed of the slip symmetric structure is higher under the same frequency). The slip symmetric artificial surface plasmon transmission structure can be applied to the technical fields of communication, integrated circuits and the like, and has wide application prospect in tunable phase shifters and filters.
Claims (9)
1. A low-pass filtering transmission structure based on sliding symmetric artificial surface plasmons is characterized by comprising an upper metal conductor layer (1) positioned on the upper surface of a dielectric substrate (2) and a lower metal conductor layer (3) positioned on the lower surface of the dielectric substrate (2), wherein the upper metal conductor layer (1) and the lower metal conductor layer (3) are both in an axisymmetric structure;
the upper metal conductor layer (1) comprises an upper artificial surface plasmon transmission structure (13) positioned in the middle, and two ends of the upper artificial surface plasmon transmission structure (13) are respectively connected with an upper transition matching structure (12) and a metal microstrip line (11) in sequence;
the lower metal conductor layer (3) comprises a lower artificial surface plasmon transmission structure (33) positioned in the middle, and two ends of the lower artificial surface plasmon transmission structure (33) are respectively connected with a lower transition matching structure (32) and a metal ground (31) in sequence;
the upper artificial surface plasmon transmission structure (13) and the lower artificial surface plasmon transmission structure (33) are in sliding symmetry along a transverse axis to form an up-down sliding symmetric artificial surface plasmon transmission structure.
2. The low-pass filtering transmission structure based on the slip symmetry artificial surface plasmons as claimed in claim 1, wherein the upper artificial surface plasmon transmission structure (13) and the lower artificial surface plasmon transmission structure (33) both comprise a plurality of periodically arranged rectangular metal units with the same size, and the upper artificial surface plasmon transmission structure (13) and the lower artificial surface plasmon transmission structure (33) are dislocated by half the period length of the rectangular metal units along the horizontal axis.
3. The low-pass filtering transmission structure based on the slip symmetry artificial surface plasmon of claim 2 is characterized in that the cut-off frequency of the dispersion unit can be changed by changing the height and/or width of the rectangular metal unit, so as to regulate and control the transmission of electromagnetic waves.
4. The low-pass filtering transmission structure based on the slip symmetry artificial surface plasmon according to claim 1, characterized in that the upper transition matching structure (12) comprises a plurality of periodically arranged metal rectangular units with gradient height, and the height of the metal rectangular units is increased in gradient from the metal microstrip lines (11) at two ends to the middle upper artificial surface plasmon transmission structure (13).
5. The low-pass filtering transmission structure based on the slip symmetry artificial surface plasmon according to claim 1, characterized in that the lower transition matching structure (32) comprises a plurality of periodically arranged rectangular groove units with gradient change in depth, and the depth of the rectangular groove units increases in gradient from the metal ground (31) at two ends to the lower artificial surface plasmon transmission structure (33) in the middle.
6. The structure of claim 1, wherein the metal ground (31) comprises a high-linearity ground connected with the lower transition matching structure (32) for gradient impedance matching.
7. The low-pass filtering transmission structure based on the slip symmetry artificial surface plasmon according to claim 1, characterized in that the metal microstrip line (11) is connected with the SMA joint inner core for microstrip excitation port feeding, and the metal ground (31) is connected with the grounding pin of the SMA interface.
8. The low-pass filtering transmission structure based on the slip symmetry artificial surface plasmon according to claim 1, characterized in that the upper metal conductor layer (1) and the lower metal conductor layer (3) are manufactured by the technology of coating copper on both sides of the dielectric substrate (2).
9. The low-pass filtering transmission structure based on the slip symmetry artificial surface plasmon according to claim 1, characterized in that the dielectric substrate (2) is a flexible plate.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105119030A (en) * | 2015-09-17 | 2015-12-02 | 南京航空航天大学 | Ultra-wideband artificial surface Plasmon low-pass filter |
| CN110380221A (en) * | 2019-06-14 | 2019-10-25 | 东南大学 | Artificial surface phasmon transmission line and transmission network with sliding symmetry characteristic |
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- 2021-12-20 CN CN202111560175.4A patent/CN114284667A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105119030A (en) * | 2015-09-17 | 2015-12-02 | 南京航空航天大学 | Ultra-wideband artificial surface Plasmon low-pass filter |
| CN110380221A (en) * | 2019-06-14 | 2019-10-25 | 东南大学 | Artificial surface phasmon transmission line and transmission network with sliding symmetry characteristic |
Non-Patent Citations (1)
| Title |
|---|
| P. PADILLA, L. F. HERRÁN, A. TAMAYO-DOMÍNGUEZ, J. F. VALENZUELA-: "《Glide Symmetry to Prevent the Lowest Stopband of Printed Corrugated Transmission Lines》", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
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