CN114284263A - Three-way TVS protection device and manufacturing method thereof - Google Patents
Three-way TVS protection device and manufacturing method thereof Download PDFInfo
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- CN114284263A CN114284263A CN202111596213.1A CN202111596213A CN114284263A CN 114284263 A CN114284263 A CN 114284263A CN 202111596213 A CN202111596213 A CN 202111596213A CN 114284263 A CN114284263 A CN 114284263A
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Abstract
The invention discloses a three-way TVS (transient voltage suppressor) protection device which is characterized by comprising an N-type semiconductor substrate, wherein an N-type voltage modulation region is arranged in the N-type semiconductor substrate, a P-type doping region is arranged on the N-type voltage modulation region, an N-type doping region is arranged inside the P-type doping region, two first insulating layers are arranged on the upper surface of the N-type semiconductor substrate, a second insulating layer is arranged on the lower surface of the N-type semiconductor substrate, a first metal region and a second metal region are respectively arranged on the surfaces of the two first insulating layers, and a third metal region is arranged on the surface of the second insulating layer; the N-type doped region, the P-type doped region, the N-type voltage modulation region and the N-type semiconductor substrate form a first base floating NPN triode; grooves and passivation layers are respectively arranged on two sides of the upper surface and the lower surface of the N-type semiconductor substrate; the three-way TVS protection device realizes three-way overvoltage protection of a high working voltage circuit and reduces the area of a PCB circuit board.
Description
Technical Field
The invention relates to the technical field of semiconductor protection devices, in particular to a three-way TVS protection device and a manufacturing method thereof.
Background
The TVS device is an overvoltage surge protection device, the TVS device is connected with a protected circuit in parallel in the circuit, when the overvoltage exceeding the breakdown voltage of the TVS appears at the port of the protected circuit, the TVS device starts to work, the overvoltage is clamped in a lower preset voltage range at a very fast response speed, and therefore the protection circuit cannot be damaged. The TVS has the advantages of fast response time, low leakage current, small breakdown voltage deviation, accurate clamping and the like, so that the TVS is widely applied to various electronic circuits.
When the TVS device is used for differential signal line protection, common mode and differential mode voltage surges need to be protected, as shown in fig. 1, general differential mode protection needs 1 TVS, common mode protection needs 2 TVS, and 3 TVS products in total, resulting in a large volume of the protection circuit module, which is not favorable for miniaturization of the PCB circuit board. When the TVS is used for port overvoltage protection at a higher operating voltage (e.g., 48V), the clamping voltage of the TVS is required not to be too high, and a NPN triode structure TVS with a floating base is generally used as the protection device. In order to prevent the clamping voltage of the TVS of the floating base NPN triode structure from being lower than the line operating voltage, it is a common practice to employ a structure in which two or more discrete TVSs are connected in series, as shown in fig. 2.
Disclosure of Invention
The present invention is directed to solve the problems of the background art, and provides a three-way TVS protection device and a method for manufacturing the same, which implement three-way overvoltage protection for a high operating voltage circuit and reduce the area of a PCB circuit board.
The purpose of the invention can be realized by the following technical scheme:
the three-way TVS protection device is characterized by comprising an N-type semiconductor substrate, wherein an N-type voltage modulation area is arranged in the N-type semiconductor substrate, a P-type doping area is arranged on the N-type voltage modulation area, an N-type doping area is arranged inside the P-type doping area, two first insulation layers are arranged on the upper surface of the N-type semiconductor substrate, a second insulation layer is arranged on the lower surface of the N-type semiconductor substrate, a first metal area and a second metal area are respectively arranged on the surfaces of the two first insulation layers, and a third metal area is arranged on the surface of the second insulation layer.
As a further scheme of the invention: the number of the N-type voltage modulation regions is three, two N-type voltage modulation regions are arranged on the top of the N-type semiconductor substrate, and one N-type voltage modulation region is arranged on the bottom of the N-type semiconductor substrate.
As a further scheme of the invention: the N-type doped region, the P-type doped region, the N-type voltage modulation region and the N-type semiconductor substrate form a first base floating NPN triode.
As a further scheme of the invention: and grooves and passivation layers are respectively arranged on two sides of the upper surface and the lower surface of the N-type semiconductor substrate.
A manufacturing method of a three-way TVS protection device comprises the following steps of substrate preparation, oxidation, primary photoetching, phosphorus ion injection and knot pushing, base region photoetching, boron ion injection and knot pushing, phosphorus region photoetching, phosphorus ion injection and knot pushing, groove photoetching and passivation, pin hole photoetching, metal evaporation, metal reverse etching and alloy, wherein the process steps of the boron ion injection and knot pushing are as follows:
two-sided implantation is carried out, the implantation dosage is 1e15-5e15cm-2, the energy is 80keV, and the implantation angle is 7 degrees;
the knot is pushed, the temperature T is 1230 +/-5 ℃, the time T is 5-8h, and a layer of thickness grows on the surface after knot pushing
A thick silicon dioxide layer.
As a further scheme of the invention: the trench photoetching and passivation process comprises the following steps: and forming a groove area pattern on the silicon chip by using a groove area photoetching plate, corroding the groove with silicon corrosion liquid, wherein the groove depth is 20-50 mu m, and forming a passivation layer in the groove.
As a further scheme of the invention: the process steps of the lead hole photoetching are as follows: and forming metal contact area windows on the upper surface and the lower surface of the silicon wafer by using a lead hole photoetching plate through glue homogenizing, exposing, developing, corroding and removing processes.
As a further scheme of the invention: the evaporation process of the titanium-nickel-silver comprises the following steps: evaporating titanium-nickel-silver layers on two sides of a silicon wafer in an electron beam evaporation mode, wherein the thickness of each layer is titanium
Nickel (II)
Silver (Ag)
As a further scheme of the invention: the metal back etching process comprises the following steps: and forming metal contact areas on the upper surface and the lower surface of the silicon wafer by using a metal area photoetching plate through glue homogenizing, exposure, development, metal corrosion and glue removing processes.
The invention has the beneficial effects that:
the three-way TVS protection device has three terminals T, R, G, any two terminals can perform overvoltage protection on one way, and overvoltage protection can be performed on three ways in total; the three-way TVS protection device comprises two monolithically integrated floating base NPN triodes which are connected in series between any two terminals, wherein for example, between T and G, an N-type doped region 4, a P-type doped region 3, an N-type voltage modulation region 2 and an N-type semiconductor substrate 1 form a first base floating base NPN triode, and the N-type doped region 4, the P-type doped region 3, the N-type voltage modulation region 2 and the N-type semiconductor substrate 1 form a second base floating base NPN triode; the three-way TVS protection device realizes three-way overvoltage protection of a high working voltage circuit and reduces the area of a PCB circuit board.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a differential signal line overvoltage protection circuit;
FIG. 2 is a schematic diagram of a tandem stacking structure of two TVS chips;
FIG. 3 is a schematic diagram of a three-way TVS protection device of the present invention;
FIG. 4 is a block diagram of a three-way TVS protection device of the present invention;
fig. 5 is a structural diagram of the three-way TVS protection device of the present invention after completing one-time photolithography and voltage modulation region doping;
FIG. 6 is a structural diagram of a three-way TVS protection device after base region lithography and boron implantation doping are completed;
FIG. 7 is a structural diagram of a three-way TVS protection device after completing phosphorus region lithography and phosphorus doping according to the present invention;
FIG. 8 is a structural diagram of a three-way TVS protection device after completing trench lithography and passivation in accordance with the present invention;
fig. 9 is a structural diagram of the three-way TVS protection device of the present invention after metal etching back;
FIG. 10 is a schematic view of a photoresist stripping apparatus according to the present invention;
FIG. 11 is a top view of a solvent tank of the present invention;
FIG. 12 is a schematic view of the structure of a solvent tank in the present invention;
FIG. 13 is a schematic structural view showing a connection relationship between a support and a rotating frame according to the present invention;
fig. 14 is a plan view of the rotating frame in the present invention.
In the figure: 1. an N-type semiconductor substrate; 2. an N-type voltage modulation region; 3. a P-type doped region; 4. an N-type doped region; 5. a first insulating layer; 6. a second insulating layer; 7. a first metal region; 8. a second metal region; 9. a third metal region; 10. a trench and a passivation layer; 11. a base; 12. a solvent tank; 13. a pillar; 14. rotating the frame; 15. a connecting shaft; 16. a flower basket; 17. a solvent frame; 18. an arc-shaped plate; 19. a stretching plate; 20. a drive motor; 21. a rotating shaft; 22. a supporting seat; 23. a drive bevel gear; 24. a driven bevel gear; 25. connecting a curved bar; 26. and a speed reducer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 3 and 4, the present invention is a three-way TVS protection device, including an N-type semiconductor substrate 1, an N-type voltage modulation region 2 is disposed in the N-type semiconductor substrate 1, three N-type voltage modulation regions 2 are disposed in the N-type voltage modulation region 2, wherein, two N-type voltage modulation regions 2 are arranged on the top of the N-type semiconductor substrate 1, one is arranged on the bottom, a P-type doped region 3 is arranged on each N-type voltage modulation region 2, an N-type doped region 4 is arranged in the P-type doped region 3, two first insulating layers 5 are arranged on the upper surface of an N-type semiconductor substrate 1, a second insulating layer 6 is arranged on the lower surface of the N-type semiconductor substrate 1, a first metal area 7 and a second metal area 8 are respectively arranged on the surfaces of the two first insulating layers 5, a third metal area 9 is arranged on the surface of the second insulating layer 6, and grooves and passivation layers 10 are respectively arranged on both sides of the upper and lower surfaces of the N-type semiconductor substrate 1;
wherein the first metal region 7 forms an electrode T, the second metal region 8 forms an electrode R, and the third metal region 9 forms an electrode G;
the three-way TVS protection device provided by the invention is provided with three terminals T, R, G, any two terminals can perform overvoltage protection on one way, and the overvoltage protection can be performed on three ways in total.
Example 2
The manufacturing process of the three-way TVS protection device comprises the following steps: preparing a substrate, oxidizing, carrying out primary photoetching, carrying out phosphorus ion implantation and junction pushing, carrying out base region photoetching, carrying out boron ion implantation and junction pushing, carrying out phosphorus region photoetching, carrying out phosphorus ion implantation and junction pushing, carrying out groove photoetching and passivation, carrying out pin hole photoetching, carrying out metal evaporation, carrying out metal reverse etching and alloying.
The method comprises the following specific process steps:
a substrate material
N-type silicon single crystal wafer, resistivity rho: 1-5 Ω · cm, sheet thickness: 220-250 μm, double-sided polishing;
di, oxidation
Performing an oxidation process by adopting a hydrogen-oxygen synthesis process, wherein the temperature T is 1100 +/-5 ℃, the time T is 3.5h, and the thickness Tox of a silicon dioxide oxidation layer is more than or equal to 1.5 mu m;
three, one time photoetching
Forming N-type voltage modulation area injection windows on the upper surface and the lower surface of a silicon wafer by a double-sided alignment exposure mode and a one-time photoetching area photomask through glue homogenizing, exposure, development and corrosion processes;
four, phosphorus ion implantation and junction pushing
Performing double-sided ion implantation at the dosage of 2e14-8e14cm-2Injecting glue with the energy of 120keV, and removing the glue by using a plasma dry-method glue remover after injection;
and (3) performing knot pushing, namely growing a layer of thickness on the surface after knot pushing at the temperature T of 1250 +/-5 ℃ for 10-20 h
The structure of the silicon dioxide layer with the thickness and the phosphorus ion after the injection and the junction pushing is finished is shown in figure 5;
fifthly, base region photoetching
Forming P-type base region windows on the upper surface and the lower surface of a silicon wafer by using a base region photoetching plate through glue homogenizing, exposing, developing, corroding and removing processes;
six, boron ion implantation and junction pushing
Double-sided implantation with implantation dose of 1e15-5e15cm-2Energy 80keV, implantation angle 7 °;
the knot is pushed, the temperature T is 1230 +/-5 ℃, the time T is 5-8h, and a layer of thickness grows on the surface after knot pushing
A thick silicon dioxide layer. The structure after the boron ion implantation and junction pushing is completed is shown in fig. 6;
seven, phosphorus area lithography
Forming N-type phosphorus doped region windows on the upper and lower surfaces of a silicon wafer by using a phosphorus region photoetching plate through glue homogenizing, exposing, developing, corroding and removing processes;
eight, phosphorus ion implantation and junction pushing
Phosphorus ion implantation agentThe amount is 1e15-5e15cm-2The energy is 60keV, the knot pushing temperature T is 1200 +/-5 ℃, the time T is 1-5 h, and a layer of thickness grows on the surface after knot pushing
A thick silicon dioxide layer. The structure after the completion of the phosphorus ion implantation and junction pushing is shown in FIG. 7;
ninth, trench lithography and passivation
And forming a groove area pattern on the silicon chip by using a groove area photoetching plate, corroding the groove with silicon corrosion liquid, wherein the groove depth is 20-50 mu m, and forming a passivation layer in the groove. The structure after the groove passivation is completed is shown in fig. 8;
ten, lead hole lithography
Forming metal contact area windows on the upper surface and the lower surface of a silicon wafer by using a lead hole photoetching plate through glue homogenizing, exposing, developing, corroding and removing processes;
eleven, titanium nickel silver evaporation
Evaporating titanium-nickel-silver layers on two sides of a silicon wafer in an electron beam evaporation mode, wherein the thickness of each layer is titanium
Nickel (II)
Silver (Ag)
Twelve, metal reverse etching
Forming metal contact areas on the upper and lower surfaces of the silicon wafer by using a metal area photoetching plate through glue homogenizing, exposing, developing, metal corrosion and photoresist removing processes, wherein the structure after metal reverse etching is shown in fig. 9;
thirteen, alloy
The vacuum alloying process is adopted, the temperature is 500 +/-5 ℃, and the time t is 30 min.
Example 3
Referring to fig. 10, in the three-way TVS protection device manufacturing process, photoresist homogenizing, exposing, developing, etching, and photoresist removing processes are adopted in the steps of one-time photolithography, base region photolithography, phosphorus region photolithography, pin hole photolithography, and metal reverse etching; at present, a semi-product of a three-way TVS protective device is subjected to photoresist removal, and a process and equipment for washing away photoresist are treated by sequentially using acetone, methanol and deionized water and vibrating in an ultrasonic machine, so that the problems of low automation degree and low photoresist removal efficiency are solved; therefore, the invention provides a photoresist removing device aiming at the manufacture process of the three-way TVS protective device;
the degumming device comprises a base 11, a solvent tank 12, a support column 13, a rotating frame 14, a connecting shaft 15 and a flower basket 16, wherein the solvent tank 12 is arranged on the top surface of the base 11, the support column 13 is vertically arranged in the middle of the base 11, the rotating frame 14 is rotatably arranged on the support column 13, one end, far away from the support column 13, of the rotating frame 14 is vertically connected with the connecting shaft 15, and the bottom end of the connecting shaft 15 is connected with the flower basket 16;
the device comprises a solvent tank 12, a support 13, a driving mechanism and a flower basket 16, wherein the solvent tank 12 is of an annular structure, the support 13 is positioned in the middle of the solvent tank 12, acetone, methanol and deionized water solvents are respectively filled in the solvent tank 12, and the driving mechanism is arranged in the support 13 and used for controlling the flower basket 16 to rotate, lift and move;
when in use, a plurality of wafers are loaded into the flower basket 16 and are arranged in the solvent tank 12, and then the flower basket 16 is continuously cleaned along the solvent tank 12 in a rotating way by starting the driving mechanism in the support 13, so that the photoresist on the surfaces of the wafers is removed;
referring to fig. 13 and 14, the driving mechanism includes a driving motor 20, a rotating shaft 21, a supporting seat 22, a driving bevel gear 23, a driven bevel gear 24, a connecting curved bar 25, and a speed reducer 26, the driving motor 20 is mounted on the bottom surface of the inner cavity of the pillar 13, the output end of the driving motor 20 is connected with the rotating shaft 21, the top end of the rotating shaft 21 is connected with the rotating frame 14, the top end of the rotating shaft 21 extends to the inner cavity of the rotating frame 14 and is connected with the driving bevel gear 23, the driving bevel gear 23 is engaged with the driven bevel gear 24, the driven bevel gear 24 is connected with one end of the connecting curved bar 25, the other end of the connecting curved bar 25 is rotatably mounted on the inner wall of the rotating frame 14, and the connecting curved bar 25 is movably sleeved with a connecting shaft 15;
the connecting curved rod 25 is installed in the inner cavity of the rotating frame 14 through the supporting seat 22, the supporting seat 22 provides a supporting function for the connecting curved rod 25, the connecting curved rod 25 is provided with the speed reducer 26, and the speed reducer 26 realizes the differential rotation function of the rotating shaft 21 and the connecting curved rod 25, so that the rotating speed of the connecting curved rod 25 is low, and the time that the flower basket 16 stays in the solvent tank 12 is ensured;
the rotating frame 14 is of an L-shaped structure, and the vertical part of the rotating frame 14 is positioned in the support column 13 and is rotationally connected with the support column 13;
when the automatic continuous degumming device is used, the driving motor 20 is controlled to work to drive the rotating shaft 21 to rotate, so that the rotating frame 14 rotates along the support column 13, the basket with the wafers rotates along the solvent groove 12 with the annular structure, acetone, methanol and deionized water are sequentially carried out on the wafers, meanwhile, the rotating shaft 21 drives the connecting curved rod 25 to rotate through the meshing action of the driving bevel gear 23 and the driven bevel gear 24, the basket 16 slowly descends to the solvent for cleaning after slowly ascending through the speed reducer 26 on the connecting curved rod 25, the basket 16 slowly descends to the solvent in a certain solvent groove 12 and simultaneously ascends, and passes through the arc-shaped plate 18 to enter the next solvent groove 12 for cleaning after cleaning, and automatic continuous degumming work is realized;
referring to fig. 11 and 12, the solvent tank 12 includes three solvent frames 17, arc plates 18, and extension plates 19, the three solvent frames 17 are annularly disposed, and are respectively filled with acetone, methanol, and deionized water, and the arc plates 18 are disposed in front of every two solvent frames 17;
wherein, the extension plates 19 are respectively arranged on the inner ring and the outer ring of the solvent groove 12, and the solvent can not be spilled out when the flower basket 16 is transferred by the extension plates 19;
the use method of the photoresist removing device comprises the following steps: a plurality of wafers are loaded into the flower basket 16 and are arranged in the solvent tank 12, then, the rotation shaft 21 is driven to rotate by starting the driving motor 20, so that the rotating frame 14 rotates along the support 13, the flower basket with the wafers rotates along the solvent tank 12 with an annular structure, acetone, methanol and deionized water are sequentially carried out on the wafers, meanwhile, the rotating shaft 21 drives the connecting curved rod 25 to rotate through the meshing action of the driving bevel gear 23 and the driven bevel gear 24, the flower basket 16 is slowly lifted and then slowly fallen back through the speed reducer 26 connected with the curved bar 25, the flower basket 16 is slowly lowered into the solvent for cleaning in a certain solvent tank 12, and simultaneously rises, so that after cleaning, the water passes through the arc-shaped plate 18 and enters the next solvent tank 12 for cleaning, therefore, automatic continuous photoresist removing work is realized, and photoresist on the surface of the wafer is removed.
The working principle of the invention is as follows: the three-way TVS protection device comprises two monolithically integrated floating base NPN triodes which are connected in series between any two terminals, wherein for example, between T and G, an N-type doped region 4, a P-type doped region 3, an N-type voltage modulation region 2 and an N-type semiconductor substrate 1 form a first base floating base NPN triode, and the N-type doped region 4, the P-type doped region 3, the N-type voltage modulation region 2 and the N-type semiconductor substrate 1 form a second base floating base NPN triode;
the three-way TVS protection device is obtained through the preparation processes of substrate preparation, oxidation, primary photoetching, phosphorus ion injection and knot pushing, base region photoetching, boron ion injection and knot pushing, phosphorus region photoetching, phosphorus ion injection and knot pushing, groove photoetching and passivation, pin hole photoetching, metal evaporation, metal reverse etching and alloy preparation;
the method comprises the steps of loading a plurality of wafers into a flower basket 16, installing the wafers in a solvent groove 12, then, starting a driving motor 20 to work, driving a rotating shaft 21 to rotate, enabling a rotating frame 14 to rotate along a supporting column 13, enabling the flower basket with the wafers to rotate along the solvent groove 12 of an annular structure, sequentially carrying out acetone, methanol and deionized water on the wafers, meanwhile, driving a connecting curved rod 25 to rotate through the meshing effect of a driving bevel gear 23 and a driven bevel gear 24 through the rotating shaft 21, slowly lifting and then slowly falling back the flower basket 16 through a speed reducer 26 on the connecting curved rod 25, cleaning the flower basket 16 in a certain solvent groove 12 by slowly falling into the solvent firstly and simultaneously accompanying lifting, and enabling the cleaned flower basket to penetrate through an arc-shaped plate 18 and enter the next solvent groove 12 to be cleaned.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (9)
1. The three-way TVS protection device is characterized by comprising an N-type semiconductor substrate (1), wherein an N-type voltage modulation region (2) is arranged in the N-type semiconductor substrate (1), a P-type doping region (3) is arranged on the N-type voltage modulation region (2), an N-type doping region (4) is arranged inside the P-type doping region (3), two first insulation layers (5) are arranged on the upper surface of the N-type semiconductor substrate (1), a second insulation layer (6) is arranged on the lower surface of the N-type semiconductor substrate (1), a first metal region (7) and a second metal region (8) are respectively arranged on the surfaces of the two first insulation layers (5), and a third metal region (9) is arranged on the surface of the second insulation layer (6).
2. A three-way TVS protection device as claimed in claim 1, wherein there are three N-type voltage modulation regions (2), two N-type voltage modulation regions (2) being disposed on top and one N-type voltage modulation region being disposed on bottom of the N-type semiconductor substrate (1).
3. The three-way TVS protection device of claim 2, wherein the N-doped region (4), the P-doped region (3), the N-voltage modulation region (2) and the N-semiconductor substrate (1) form a first base floating NPN transistor.
4. A three-way TVS protection device as claimed in claim 3, wherein the N-type semiconductor substrate (1) is provided with a trench and a passivation layer (10) on both sides of its upper and lower surfaces.
5. A manufacturing method of a three-way TVS protection device comprises the following steps of substrate preparation, oxidation, primary photoetching, phosphorus ion injection and junction pushing, base region photoetching, boron ion injection and junction pushing, phosphorus region photoetching, phosphorus ion injection and junction pushing, groove photoetching and passivation, pin hole photoetching, metal evaporation, metal reverse etching and alloy, and is characterized in that:
the process steps of boron ion implantation and junction pushing are as follows:
two-sided implantation is carried out, the implantation dosage is 1e15-5e15cm-2, the energy is 80keV, and the implantation angle is 7 degrees;
the knot is pushed, the temperature T is 1230 +/-5 ℃, the time T is 5-8h, and a layer of thickness grows on the surface after knot pushing
A thick silicon dioxide layer.
6. The method as claimed in claim 5, wherein the trench lithography and passivation process comprises: and forming a groove area pattern on the silicon chip by using a groove area photoetching plate, corroding the groove with silicon corrosion liquid, wherein the groove depth is 20-50 mu m, and forming a passivation layer in the groove.
7. The method of claim 6, wherein the process steps of the wire hole lithography are as follows: and forming metal contact area windows on the upper surface and the lower surface of the silicon wafer by using a lead hole photoetching plate through glue homogenizing, exposing, developing, corroding and removing processes.
8. The method of claim 7, wherein the evaporation of the ti-ni-ag comprises the steps of: evaporating titanium-nickel-silver layers on two sides of a silicon wafer in an electron beam evaporation mode, wherein the thickness of each layer is titanium
Nickel (II)
Silver (Ag)
9. The method of claim 8, wherein the metal etching process comprises: and forming metal contact areas on the upper surface and the lower surface of the silicon wafer by using a metal area photoetching plate through glue homogenizing, exposure, development, metal corrosion and glue removing processes.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115346979A (en) * | 2022-10-18 | 2022-11-15 | 富芯微电子有限公司 | TVS device based on thyristor structure and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115346979A (en) * | 2022-10-18 | 2022-11-15 | 富芯微电子有限公司 | TVS device based on thyristor structure and manufacturing method thereof |
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