CN114279784A - Preparation method of transmission electron microscope sample - Google Patents
Preparation method of transmission electron microscope sample Download PDFInfo
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- CN114279784A CN114279784A CN202111579672.9A CN202111579672A CN114279784A CN 114279784 A CN114279784 A CN 114279784A CN 202111579672 A CN202111579672 A CN 202111579672A CN 114279784 A CN114279784 A CN 114279784A
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Abstract
The invention discloses a preparation method of a transmission electron microscope sample, which comprises the following steps: horizontally placing the carrying net and the sample on the surface of a sample table, and welding the sample on the carrying net; adjusting the carrier net and the sample to be vertical to the surface of the sample table, and cutting the first surface of the sample along the first direction to thin the second surface of the sample; adjusting the grid and the sample to be parallel to the surface of the sample table, and taking the sample off the grid; adjusting the net to be vertical to the surface of the sample table; and re-welding the sample on the grid, and cutting the second surface of the sample along the first direction to thin the first surface of the sample until the sample exposes the position to be detected. According to the technical scheme provided by the embodiment of the invention, in the preparation process of the transmission electron microscope sample, the relative positions of the carrier net and the sample table are changed, so that the observation and cutting of multiple surfaces of the sample are realized, and the cutting accuracy is improved; in addition, the cutting surface is adjusted in a rotary net-loading mode, so that a technician is not required to adjust the position of the sample, and the method is simple to operate and easy to realize.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing and analysis, in particular to a preparation method of a transmission electron microscope sample.
Background
At present, with the rapid development of semiconductor technology, the demand for chip development and failure analysis is increasing, and for a small chip or a chip with a small failure point, a sample is generally cut and made into a micro structure that can be observed by a Transmission Electron Microscope (TEM), so as to analyze the failure point of the sample.
In the prior art, when samples are prepared, the surfaces of samples in the same direction are only cut, as shown in fig. 1 and 2, the samples are cut under the plane in fig. 1, and the samples are cut under the section in fig. 2. However, in both methods, it is difficult to observe the overall appearance of the sample during the sample preparation process, the sample preparation efficiency is low, and the target position may be damaged.
Disclosure of Invention
In order to solve the above problems, embodiments of the present invention provide a method for preparing a transmission electron microscope sample, so as to accurately cut a failure position of a chip and improve sample preparation efficiency.
The preparation method of the transmission electron microscope sample provided by the embodiment of the invention comprises the following steps:
horizontally placing the carrying net and the sample on the surface of a sample table, and welding the sample on the carrying net;
adjusting the carrier net and the sample to be vertical to the surface of the sample table, and cutting the first surface of the sample along the first direction to thin the second surface of the sample until the sample exposes to-be-detected position; the first surface is connected with the second surface;
adjusting the grid and the sample to be parallel to the surface of the sample table, and taking the sample off the grid;
adjusting the net to be vertical to the surface of the sample table;
and re-welding the sample on the grid, and cutting the second surface of the sample along the first direction to thin the first surface of the sample until the sample exposes the position to be detected, so as to obtain the transmission electron microscope sample.
According to the technical scheme provided by the embodiment of the invention, in the preparation process of the transmission electron microscope sample, the cutting surface of the sample can be adjusted by changing the relative position of the carrier net and the sample table according to the state of the sample so as to cut different surfaces of the sample until the position to be detected is exposed, and in the cutting process, the observation and cutting of multiple surfaces of the sample can be realized, so that the cutting accuracy is improved; in addition, the cutting surface is adjusted in a rotary net-loading mode, so that a technician is not required to adjust the position of the sample, and the method is simple to operate and easy to realize.
Drawings
FIG. 1 is a schematic view of a prior art method of cutting a sample at a mid-plane;
FIG. 2 is a schematic diagram of a prior art method of cutting a sample in cross-section;
FIG. 3 is a flowchart illustrating a method for preparing a TEM sample according to an embodiment of the present invention;
fig. 4 is a schematic structural view of a carrier net horizontally disposed according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of relative positions of an ion gun, an electron gun, and an object in an FIB tool according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of relative positions of an ion gun, an electron gun, and an object in another FIB chamber according to an embodiment of the present invention;
fig. 7 is a schematic structural view of a carrier net vertically disposed according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a first surface of a sample being cut in a first direction according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a second surface of a sample being cut along a first direction according to an embodiment of the present invention;
FIG. 10 is a schematic view of another embodiment of the present invention for cutting a first surface of a sample along a first direction;
FIG. 11 is a schematic view of another embodiment of the present invention for cutting a second surface of a sample along a first direction;
fig. 12 is a schematic diagram of an initial sample cutting process according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 3 is a flowchart of a method for preparing a transmission electron microscope sample, which may be used to cut a chip, according to an embodiment of the present invention, as shown in fig. 3, the method includes:
s110, horizontally placing the grid and the sample on the surface of a sample table, and welding the sample to the grid.
Specifically, a net is mounted on a net-carrying support, and then the net-carrying support is horizontally placed on a sample platform, so that the net and the surface of the sample platform are parallel to each other, fig. 4 is a schematic structural diagram of the horizontal placement of the net according to the embodiment of the present invention, and fig. 4 is a top view, so that the structure is clearer, and each structure in fig. 4 is only used for explaining the position and does not represent the real structure. As can be seen from fig. 4, the net carrier 1 is mounted on the net carrier 2, the net carrier 2 is horizontally placed on the sample stage 3, and is parallel to the sample stage 3, and the three are horizontally placed.
Further, the sample is welded to the carrier web, where the sample is also horizontal relative to the sample stage. Any one of the prior arts can be adopted to weld the sample and the grid, and the embodiment of the present invention is not limited thereto, for example: the sample was welded to a horizontally placed grid using a gas injection system in a Focused Ion Beam (FIB) stage. The carrier net can also be called copper net, micro-grid, etc., and the carrier net, gas injection system, etc. are conventional terms in the field of FIB cutting, and will not be explained here. The sample is a minute sample including a position to be detected.
S120, adjusting the net and the sample to be vertical to the surface of the sample table, and cutting the first surface of the sample along the first direction to thin the second surface of the sample until the sample exposes the position to be detected; the first surface is connected with the second surface.
It should be noted that, the FIB machine includes an electron gun and an ion gun, the electron gun emits an electron beam for observing the object morphology, the ion gun emits an ion beam for cutting the object, the electron gun and the ion gun form an included angle of 52 degrees in the machine, when the object is just placed in the FIB machine, i.e. the object, the carrier net and the like are placed horizontally, the upper surface of the object is perpendicular to the electron gun, and forms 38 degrees with the ion gun, and the state is defined as 0 degree at this time; when the upper surface of the object needs to be cut, the direction of the sample stage is adjusted to enable the ion gun to be vertical to the upper surface of the object, the electron gun and the upper surface of the object form a 38-degree angle, and the state is defined as 52-degree at the moment; when the upper surface of the object needs to be observed, the object, the net and the like can be adjusted back to the 0-degree state. Fig. 5 is a schematic diagram of relative positions of an ion gun, an electron gun, and an object in an FIB stage according to an embodiment of the present invention, and fig. 6 is a schematic diagram of relative positions of an ion gun, an electron gun, and an object in another FIB stage according to an embodiment of the present invention, where fig. 5 is a state of 0 degrees, where the electron gun 4 is perpendicular to the upper surface of the object 5, and fig. 6 is a state of 52 degrees, where the ion gun 6 is perpendicular to the upper surface of the object 5.
Specifically, the net-carrying support is rotated by 90 degrees, so that the net and the sample table can be adjusted to be vertical to the surface of the sample table, and the sample is welded on the net-carrying support and is vertical to the sample table. Fig. 7 is a schematic structural diagram of a vertical arrangement of a grid according to an embodiment of the present invention, and it can be seen from fig. 7 that the grid 1 is vertically arranged relative to the sample stage 3.
Further, in a 52-degree state, the first surface of the sample is cut along the first direction to thin the second surface of the sample until the sample exposes the position to be detected, and the first direction is the direction of emitting the ion beam. It is understood that the plane perpendicular to the ion beam is the surface on which the ion beam is bombarded, and the surface parallel to the ion beam is the surface to be thinned, and thus, in this embodiment, the first surface may refer to one and/or two surfaces; similarly, the second surface may refer to one and/or two surfaces, but the first surface should be contiguous with the second surface, and if the sample is a regular tetrahedron, the first surface is contiguous with the second surface perpendicularly. For convenience of explanation, the cutting process is described in the embodiment of the present invention by taking a regular tetrahedron sample as an example.
In the cutting state, the ion beam is perpendicular to the first surface and parallel to the second surface. Optionally, the direction of the sample stage can be adjusted at any time during the cutting process, and the electron gun is used for emitting electron beams to observe the second surface of the sample, namely the thinned surface, so that the position to be detected is prevented from being damaged by excessive cutting.
Fig. 8 is a schematic diagram of cutting the first surface of the sample along the first direction according to the embodiment of the present invention, and fig. 8 exemplarily shows the cutting process in this state. The first direction is a direction in which the ion beam is emitted during the cutting process, and can be referred to as an arrow in fig. 8, where the first direction is perpendicular to the first surface 110 and the first direction is parallel to the second surface 120. Referring to fig. 8, the first surface 110 of the sample 100 is cut in a first direction to thin the second surface 120 of the sample 100, completing the cut to the plane of the sample 100.
It should be noted that, in this case, the second surface 120 may be a surface shown in the figure, another surface parallel to and opposite to the surface shown in the figure, or both of the surfaces, and in the actual cutting process, the second surface 120, i.e., the surface to be thinned, may be selected according to the position to be detected.
S130, adjusting the grid and the sample to be parallel to the surface of the sample table, and taking the sample off the grid.
Further, after the first surface of the sample is cut, the direction of the net-carrying bracket is adjusted to enable the net to be parallel to the surface of the sample stage, at the moment, the sample is also parallel to the sample stage, then the sample is taken down from the net-carrying bracket to enable the sample to be separated from the net-carrying bracket, and at the moment, the relative position relationship between the net-carrying bracket and the sample stage can refer to fig. 4.
S140, adjusting the net to be vertical to the surface of the sample table.
Further, the direction of the net carrying bracket is readjusted to enable the net to be perpendicular to the surface of the sample table. At this time, the relative position relationship between the carrier web and the sample stage can be referred to in fig. 7. Note that the sample was not welded to the mesh.
S150, welding the sample on the grid again, and cutting the second surface of the sample along the first direction to thin the first surface of the sample until the sample exposes the position to be detected, so as to obtain the transmission electron microscope sample.
Wherein the sample can be re-welded to the carrier web using any of the prior art techniques. And after the sample and the grid are welded again, cutting the second surface of the sample along the first direction at 52 degrees to thin the first surface of the sample until the sample exposes the position to be detected, and finally obtaining the required transmission electron microscope sample. It should be noted that, since the direction of the grid is adjusted in the previous step, the ion beam is perpendicular to the second surface of the sample and parallel to the first surface of the sample. Optionally, the direction of the sample stage can be adjusted at any time during the cutting process, and the electron gun is used for emitting electron beams to observe the first surface of the sample, namely the thinned surface, so that the position to be detected is prevented from being damaged by excessive cutting.
Fig. 9 is a schematic diagram of cutting the second surface of the sample along the first direction according to an embodiment of the present invention, and fig. 9 exemplarily shows a cutting process in this state. The first direction can be referred to as the arrow in fig. 9, and is parallel to the first surface 110 of the sample 100 because the relative position of the carrier net 1 and the sample stage is adjusted, and the first direction is perpendicular to the second surface 120 of the sample 100 in this state. Referring to fig. 9, the second surface 120 of the sample 100 is cut in the first direction to thin the first surface 110 of the sample 100, completing the cutting of the cross section of the sample 100.
It should be noted that, in this case, the first surface 110 may be a surface shown in the figure, another surface parallel to and opposite to the surface shown in the figure, or both of the surfaces, and during the actual cutting process, the first surface 110, i.e. the surface to be thinned, may be selected according to the position to be detected.
According to the technical scheme provided by the embodiment of the invention, the sample is welded with the carrying net in different states by adjusting the relative position of the carrying net and the sample table, the different surfaces of the sample can be cut without independently adjusting the direction of the sample, the cutting surface of the sample can be adjusted according to the state of the sample in the cutting process, the failure point in the sample can be observed in different directions, and the cutting accuracy is further improved.
Optionally, as a preferred embodiment, before welding the sample on the grid, the method may further include:
fixing an initial sample on a sample table, and determining a target area according to a position to be detected, wherein the target area comprises the position to be detected; the initial sample was cut to obtain a sample.
The position to be detected refers to a position of a failure point in the chip to be detected, optionally, the determination mode of the position to be detected can be implemented by any one of the prior art, for example, a hotspot positioning mode and/or a voltage contrast positioning mode can be used to roughly position the position of the failure point, and the specific implementation process of the two positioning modes is not described in this embodiment.
Further, the target region is determined according to the to-be-detected position of the sample, and it can be understood that the area of the target region should be larger than the to-be-detected position, that is, the target region includes the to-be-detected position, the initial sample is cut, and the initial sample in the target region is extracted, that is, the sample in S110 is obtained.
The method comprises the steps of determining a target area according to a position to be detected in an initial sample, namely a failure point position, cutting the target area from the initial sample to obtain a sample, and then finely cutting the sample by adopting the method in the embodiment, so that the failure point position can be accurately cut, the cutting time can be reduced to a certain extent, and the cutting efficiency is improved.
Optionally, as a preferred embodiment, the cutting the first surface of the sample along the first direction may include:
cutting a first surface of the sample along a first direction by adopting an ion beam cutting process;
cutting the second surface of the sample in a first direction, comprising:
and cutting the second surface of the sample along the first direction by using an ion beam cutting process.
In S120 and S150, an ion gun in the FIB machine may be used to emit an ion beam to cut the sample. In the cutting process, parameters in the ion beam cutting process, such as ion beam voltage and current, may be selected according to actual sample conditions, which is not limited in this embodiment.
The FIB technology is that the ion beam that the ion source produced accelerates through the ion gun, acts on the sample surface after the focus to process the sample, because ion beam cutting accuracy is higher, utilize the ion beam to cut the sample, can realize the accurate cutting, can also accomplish not polluting and damage the sample.
Optionally, as a preferred embodiment, the cutting the first surface of the sample along the first direction includes:
preparing a first protective layer on the first surface, wherein the first protective layer covers the position to be detected;
cutting the area which is not covered by the first protective layer along the first direction, and reserving the area which is covered by the first protective layer;
cutting the second surface of the sample in a first direction, comprising:
preparing a second protective layer on the second surface, wherein the second protective layer covers the position to be detected;
and cutting the area which is not covered by the second protective layer along the first direction, and reserving the area which is covered by the second protective layer.
Fig. 10 is a schematic view of another embodiment of the present invention for cutting the first surface of the sample along the first direction. Specifically, when the first surface 110 of the sample 100 is cut, the first protection layer 111 may be deposited on the first surface 110, the first protection layer 111 covers the position to be detected, and then the area not covered by the first protection layer 111 may be removed along the first direction by using an ion beam.
Fig. 11 is a schematic view of another embodiment of the present invention for cutting the second surface of the sample along the first direction. Similarly, when the second surface 120 of the sample 100 is cut, the second protective layer 112 may be deposited on the second surface 120, the second protective layer 112 covers the position to be detected, and then the ion beam is used to remove the area not covered by the second protective layer 112 along the first direction.
In the embodiment of the invention, before cutting each surface of the sample, the protective layer can be prepared on the corresponding surface to be cut, and the protective layer can prevent the ion beam from damaging the position to be detected of the sample in the cutting process, ensure the integrity of the position to be detected and improve the success rate of sample preparation.
Optionally, as a preferred embodiment, preparing the first protective layer on the first surface may include: depositing a first protective layer over the sample with a gas injection system; preparing a second protective layer on the second surface may include: a second protective layer is deposited over the sample using the gas injection system.
In particular, a gas injection system in the FIB station, in combination with an ion or electron gun, may be used to deposit a protective layer on the surface of the sample. The ion gun emitting ion beams and/or the electron gun emitting electron beams can be selected according to actual conditions to deposit the protective layer. In addition, the injection rate of the gas, the type of the gas, the thickness of the deposited protective layer, and the like during the deposition of the protective layer can be selected according to the actual sample condition, and are not limited herein.
The gas injection system is utilized to deposit the protective layer on the surface to be cut of the sample, the method is simple, the operation is convenient, and the thickness of the protective layer is easy to control.
Optionally, as a preferred embodiment, the removing the sample from the carrier net may include:
taking down the sample from the net by a nanometer arm;
re-welding the sample to the grid, comprising:
placing the sample on a carrying net by adopting a nanometer arm, and welding the sample and the carrying net; when the sample is taken off from the grid by the nanometer arm and the sample is placed on the grid by the nanometer arm, the nanometer arm keeps the same posture.
The nanometer arm is a common component in an FIB machine, and can be welded with a sample by using a gas injection system so as to realize the welding and separation of the sample and the carrier net. Optionally, the sample is welded to the grid again, and the sample can be close to the grid by using a nanometer arm, and the sample is welded to the position where the sample is contacted with the grid by using a gas injection system. In S130, when the sample is taken off from the grid, and in S150, the relative position between the grid and the sample stage is changed during the process of welding the sample and the grid again, and the posture of the nanoarm is not changed.
The welding and the separation of the sample and the carrier net are realized by utilizing the nanometer arm, the orientation of each surface of the sample can be kept unchanged, and therefore the cutting of the first surface and the second surface of the sample is accurately finished.
Optionally, as a preferred embodiment, taking the sample off the grid by using a nanoarm may include:
and cutting off one side of the sample connected with the grid by adopting an ion beam cutting process, and lifting up the nanometer arm so as to disconnect the sample from the grid.
The welding mode is the same as that of the embodiment, and then the ion beam cutting process is adopted to cut off the side, welded with the load net, of the sample, and lift the nano arm to separate the sample from the load net.
Optionally, when the sample is taken down from the grid by the nano arm, the welding point between the nano arm and the sample may be located on the first protective layer to prevent the damage to the position to be measured of the sample.
Utilize the ion beam cutting sample and carry the one side that the net is connected, can realize accurate cutting, with sample and the separation of carrying the net fast, further promote cutting efficiency.
Optionally, in a preferred embodiment provided by the present invention, the cutting the initial sample to obtain a sample may include:
cutting the initial sample at a first side and a second side of the target area by adopting an ion beam cutting process, wherein the first side and the second side are oppositely arranged;
cutting the initial sample on a third side of the target area by adopting an ion beam cutting process, wherein the third side is respectively intersected with the first side and the second side;
welding the target area by adopting a nanometer arm, wherein a welding point is close to the third side of the target area;
and cutting the initial sample on the fourth side of the target area by adopting an ion beam cutting process, wherein the fourth side is arranged opposite to the third side to obtain the sample.
Optionally, after cutting the three sides of the initial sample, the cutting parameters may be adjusted to perform rough trimming on the cut edges of the three sides of the initial sample.
Fig. 12 is a schematic diagram of cutting an initial sample according to an embodiment of the present invention, and the cutting process of the initial sample is described with reference to fig. 12.
Referring to fig. 12, the initial sample 200 is cut at a first side 310 and a second side 320 of the target area 300 of the initial sample 200 using an ion beam cutting process. Thereafter, the third side 330 of the target area 300 is cut, still using the ion beam, such that all three sides of the target area 300 are separated from the initial sample 200, i.e., the target area 300 is U-cut. Further, the nanoarm 7 is welded to the target area 300 at a point near the third side 330, and further, the fourth side 340 of the target area 300 is cut by an ion beam to separate the target area 300 from the initial sample 200, and then the nanoarm 7 is lifted to obtain the sample. In addition, when the first side 310 and the second side 320 are cut as described above, the length of the cut pattern is greater than the length of the target area 300.
In the cutting process, each cutting parameter can be set according to the actual situation, and is not limited here. The ion beam is utilized to cut three sides of the target area first, and after the nanoarm is welded with the target area, the fourth side of the target area is cut to be empty, so that the target area is extracted from an initial sample, the cutting efficiency can be ensured, a complete target area containing the position to be detected can be obtained, and the cutting of the position to be detected can be effectively completed in the subsequent cutting process.
Optionally, as a preferred embodiment, before the cutting the initial sample at the first side and the second side of the target area by using the ion beam cutting process, the method further includes: and preparing a third protective layer on the surface of the target area.
Specifically, a third protective layer can be prepared in the target area by using a gas injection system in the FIB machine, and the size of the third protective layer can be adjusted according to the area size of the target area. And a third protective layer is prepared in the target area, so that the integrity of the target area structure in the sample preparation process is facilitated, and the sample preparation success rate is improved.
Optionally, as a preferred embodiment, in S120, adjusting the grid and the sample to be perpendicular to the surface of the sample stage, and cutting the first surface of the sample along the first direction to thin the second surface of the sample until the sample exposes the position to be detected, the method may further include:
observing the sample by adopting an electron beam imaging process, and stopping cutting until the position to be detected is observed;
re-welding the sample to the grid, cutting the second surface of the sample along the first direction to thin the first surface of the sample until the sample exposes the position to be detected, and may further include:
and observing the sample by adopting an electron beam imaging process, and stopping cutting until the position to be detected is observed.
Specifically, in the cutting process of the sample, the position of the sample stage can be adjusted at any time, so that an electron gun in the FIB stage is perpendicular to the surface to be thinned of the sample to observe the appearance of the surface to be thinned, when the surface to be thinned is exposed out of the position to be detected, the cutting is stopped, and the surface to be thinned comprises a first surface and a second surface. The sample is observed by the electron beam in the cutting process, whether the desired position is cut can be observed at any time, and when the surface to be thinned is abnormal or the position to be detected is detected, cutting is stopped, so that the position to be detected is prevented from being damaged.
According to the technical scheme provided by the embodiment of the invention, in the preparation process of the transmission electron microscope sample, the cutting surface of the sample can be adjusted by changing the relative position of the carrier net and the sample table according to the state of the sample so as to cut different surfaces of the sample until the position to be detected is exposed, and in the cutting process, the observation and cutting of multiple surfaces of the sample can be realized, so that the cutting accuracy is improved; in addition, the cutting surface is adjusted in a rotary net-loading mode, so that a technician is not required to adjust the position of the sample, and the method is simple to operate and easy to realize.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments illustrated herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A preparation method of a transmission electron microscope sample is characterized by comprising the following steps:
horizontally placing a carrying net and a sample on the surface of a sample table, and welding the sample to the carrying net;
adjusting the net and the sample to be vertical to the surface of the sample table, and cutting the first surface of the sample along a first direction to thin the second surface of the sample until the sample exposes to-be-detected position; the first surface is connected with the second surface;
adjusting the grid and the sample to be parallel to the surface of the sample table, and taking the sample off the grid;
adjusting the carrier net to be vertical to the surface of the sample table;
and re-welding the sample to the carrier net, and cutting the second surface of the sample along the first direction to thin the first surface of the sample until the sample exposes the position to be detected, so as to obtain the transmission electron microscope sample.
2. The method of claim 1, wherein prior to welding the sample to the carrier web, further comprising:
fixing an initial sample on the sample table, and determining a target area according to the position to be detected, wherein the target area comprises the position to be detected;
and cutting the initial sample to obtain the sample.
3. The method of claim 1, wherein cutting the first surface of the sample in a first direction comprises:
cutting the first surface of the sample along a first direction by adopting an ion beam cutting process;
cutting a second surface of the sample along the first direction, comprising:
and cutting the second surface of the sample along the first direction by adopting an ion beam cutting process.
4. The method of claim 1, wherein cutting the first surface of the sample in a first direction comprises:
preparing a first protective layer on the first surface, wherein the first protective layer covers the position to be detected;
cutting the area which is not covered by the first protective layer along a first direction, and reserving the area which is covered by the first protective layer;
cutting a second surface of the sample along the first direction, comprising:
preparing a second protective layer on the second surface, wherein the second protective layer covers the position to be detected;
and cutting the area which is not covered by the second protective layer along the first direction, and reserving the area which is covered by the second protective layer.
5. The method of claim 4, wherein preparing a first protective layer on the first surface comprises:
depositing a first protective layer over the sample with a gas injection system;
preparing a second protective layer on the second surface, comprising:
depositing a second protective layer over the sample using a gas injection system.
6. The method of claim 1, wherein removing the sample from the carrier web comprises:
taking the sample off the grid by using a nano arm;
re-welding the sample to the carrier web, comprising:
placing the sample on the carrier net by using the nanometer arm, and welding the sample and the carrier net; when the sample is taken off from the grid by the nanometer arm and the sample is placed on the grid by the nanometer arm, the same posture is kept by the nanometer arm.
7. The method of claim 6, wherein removing the sample from the carrier web using a nanoarm comprises:
and cutting off one side of the sample connected with the grid by adopting an ion beam cutting process, and lifting the nanometer arm to disconnect the sample from the grid.
8. The method for preparing according to claim 2, wherein the cutting of the initial sample to obtain the sample comprises:
cutting the initial sample at a first side and a second side of the target region by adopting an ion beam cutting process, wherein the first side and the second side are oppositely arranged;
cutting the initial sample at a third side of the target region by an ion beam cutting process, wherein the third side is respectively intersected with the first side and the second side;
welding the target area by adopting a nanometer arm, wherein a welding point is close to the third side of the target area;
and cutting the initial sample on a fourth side of the target area by adopting an ion beam cutting process, wherein the fourth side is arranged opposite to the third side, and the sample is obtained.
9. The method of claim 8, wherein the cutting the initial sample at the first and second sides of the target area using an ion beam cutting process further comprises:
and preparing a third protective layer on the surface of the target area.
10. The preparation method according to claim 1, wherein the carrier net and the sample are adjusted to be perpendicular to the surface of the sample stage, and the first surface of the sample is cut in a first direction to thin the second surface of the sample until the sample exposes the position to be detected; the method comprises the following steps:
observing the sample by adopting an electron beam imaging process, and stopping cutting until the position to be detected is observed;
re-welding the sample to the carrier net, and cutting the second surface of the sample along the first direction to thin the first surface of the sample until the sample exposes the position to be detected, including:
and observing the sample by adopting an electron beam imaging process, and stopping cutting until the position to be detected is observed.
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