CN212514335U - TEM sample bears device - Google Patents
TEM sample bears device Download PDFInfo
- Publication number
- CN212514335U CN212514335U CN202021063875.3U CN202021063875U CN212514335U CN 212514335 U CN212514335 U CN 212514335U CN 202021063875 U CN202021063875 U CN 202021063875U CN 212514335 U CN212514335 U CN 212514335U
- Authority
- CN
- China
- Prior art keywords
- sample
- attachment element
- tem
- ion beam
- tem sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Sampling And Sample Adjustment (AREA)
Abstract
The utility model discloses a TEM sample bears device, including attaching element (11), attaching element (11) are formed in a side of basement (10), and the sample (12) is attached in bonding on attaching element (11), and a surface of attaching sample (12) is just to the ion beam, and after basement (10) rotated 90 degrees, another surface of attaching sample (12) is just to the ion beam, and the ion beam can not be sheltered from by a part of basement (10). The utility model discloses a TEM sample bears device is applicable to a plurality of surfaces of processing attached sample, has realized same attached sample, and the function is observed to multizone TEM.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to a TEM sample bears device.
Background
The development of material science and semiconductor technology often requires the analysis of the microstructure of a specific region or semiconductor device, the characteristic dimension of which is often only nanometer, so that the observation needs to be carried out by means of image capability of a TEM (transmission electron microscope) nanometer level or even an atomic level, and at the moment, TEM sample preparation needs to be carried out by means of FIB (focused ion beam). The ion gun of the FIB is usually in a fixed state, and when preparing a sample, a multi-axis sample stage is usually used to rotate a grid on which the sample is located so that a certain direction of the sample is at a specific FIB processing position. When the existing TEM sample bearing device is matched with FIB to prepare a TEM sample, a thin area aiming at one direction can be prepared, two directions are needed, and especially when the sample depth direction is observed, the existing TEM sample bearing device cannot well meet the requirements.
SUMMERY OF THE UTILITY MODEL
In order to overcome the not enough of above-mentioned current TEM sample bearing device, the utility model provides a TEM sample bearing device for solve current sample bearing device in can't carry out the limitation of FIB processing to a plurality of surfaces of a sample simultaneously.
A TEM sample carrying device comprises an attachment element 11, wherein the attachment element 11 is formed on one side surface of a substrate 10, a sample 12 is adhered to the attachment element 11, one surface of the attached sample 12 is opposite to an ion beam, and the other surface of the attached sample 12 is opposite to the ion beam after the substrate 10 is rotated by 90 degrees, so that the ion beam is not shielded by a part of the substrate 10.
In the TEM sample carrier, the substrate 10 is an arc-shaped plate-shaped structure and has two mutually perpendicular straight side edges, and after a groove is dug on one straight side edge of the arc-shaped plate-shaped structure, the remaining part parallel to or coincident with the other straight side edge is formed as the attachment element 11;
in the TEM sample carrier, the bonding position of the attachment sample 12 to the attachment member 11 is located on the left side or above the attachment member 11.
In the TEM sample carrier, the ends of the straight side edges of the circular arc plate-shaped structure are the left wing a and the right wing B, the attachment element 11 is located outside the connecting line of the left wing a and the right wing B of the substrate 10, and the circle center of the outer contour of the circular arc plate-shaped structure is also located outside the connecting line.
According to the TEM sample carrying device, the diameter of the outer contour circle of the circular arc plate-shaped structure is 3 mm.
As described above, the TEM sample bearing device of the present invention overcomes the limitation that the structure of the sample bearing device in the prior art is not suitable for FIB processing of a plurality of surfaces of the same sample, and has the following beneficial effects:
1. the outer contour of the substrate does not block the processing surface of the attached sample in the projection direction of the ion beam; the method is suitable for processing multiple surfaces of an attached sample, and realizes the multi-region TEM observation function of the same attached sample.
2. The outer contour of the substrate can not block the inlet and outlet paths of the gas guide pipe during beam-induced deposition, and the substrate is prevented from deforming.
Drawings
FIG. 1 is a front view of a TEM sample carrier of the present invention;
FIG. 2 is a front view of a TEM sample carrier and attached sample of the present invention;
FIG. 3 is a perspective view of FIG. 2;
FIG. 4 is a schematic view of the structure of FIG. 2 rotated 90 degrees;
fig. 5 is a schematic view of the position of the attachment element 11 in a circular arc plate-like structure;
FIG. 6 is a perspective view of the structure shown in FIG. 4;
description of the element reference numerals
10 a substrate;
11 an attachment element;
12 attaching a sample;
13 ion beam direction;
Detailed Description
The present invention will be described in detail with reference to specific examples.
Referring to fig. 1-6, the present invention provides a TEM sample carrier, including an attachment element 11, wherein the attachment element 11 is formed on one side of a substrate 10, an attachment sample 12 is adhered to the attachment element 11, one surface of the attachment sample 12 faces an ion beam, and after the substrate 10 is rotated by 90 degrees, the other surface of the attachment sample 12 faces the ion beam, and the ion beam is not blocked by a portion of the substrate 10.
Preferably, the substrate 10 is an arc-shaped plate-shaped structure, and has two mutually perpendicular straight side edges, and after a groove is dug on one straight side edge of the arc-shaped plate-shaped structure, the remaining part parallel to or coincident with the other straight side edge is formed into the attachment element 11;
the bonding position of the attachment specimen 12 to the attachment element 11 is located on the left side of the attachment element 11, but may be above the attachment element 11.
Preferably, the ends of the straight side edges of the circular arc plate-shaped structure are a left wing a and a right wing B, the attachment element 11 is located outside a connecting line of the left wing a and the right wing B of the substrate 10 (fig. 5), and the center of the outer contour of the circular arc plate-shaped structure is also located outside the connecting line, so that the outer contour of the substrate 10 with a relatively large circular arc dimension can be obtained to facilitate loading, and the outer contour of the substrate 10 does not affect the processing path of the ion beam after rotating horizontally and clockwise by 90 degrees.
Preferably, the diameter of the outer contour circle of the circular arc plate-shaped structure is 3mm, and is consistent with the diameter of the gasket in the TEM sample rod.
Preferably, the left side of the attached sample 12 is rotated by 90 degrees, and the ion beam can process the left side of the attached sample 12 by rotating the left side of the attached sample 12.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are considered to be within the scope of the invention as defined by the following claims.
Claims (5)
1. A TEM sample carrying device is characterized by comprising an attachment element (11), wherein the attachment element (11) is formed on one side surface of a substrate (10), an attached sample (12) is adhered to the attachment element (11), one surface of the attached sample (12) is opposite to an ion beam, and after the substrate (10) is rotated by 90 degrees, the other surface of the attached sample (12) is opposite to the ion beam, and the ion beam is not shielded by a part of the substrate (10).
2. A TEM sample carrier device according to claim 1, wherein the base (10) is a circular arc plate-like structure having two mutually perpendicular straight sides, and after the recess is dug in one straight side of the circular arc plate-like structure, the remaining part parallel to or coinciding with the other straight side is formed as the attachment element (11).
3. A TEM sample carrier as claimed in claim 1 or claim 2 in which the attachment location of the attachment sample (12) to the attachment element (11) is to the left of or above the attachment element (11).
4. A TEM sample carrier as claimed in claim 2 in which the linear sides of the circular arc plate-like structure terminate in a left wing (a) and a right wing (B), the attachment element (11) is located outside the line joining the left wing (a) and the right wing (B) of the base (10), and the centre of the outer contour of the circular arc plate-like structure is also located outside this line.
5. A TEM sample carrier as claimed in claim 2 in which the circular arc plate-like structure has an outer circular diameter of 3 mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021063875.3U CN212514335U (en) | 2020-06-10 | 2020-06-10 | TEM sample bears device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021063875.3U CN212514335U (en) | 2020-06-10 | 2020-06-10 | TEM sample bears device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN212514335U true CN212514335U (en) | 2021-02-09 |
Family
ID=74395813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202021063875.3U Expired - Fee Related CN212514335U (en) | 2020-06-10 | 2020-06-10 | TEM sample bears device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN212514335U (en) |
-
2020
- 2020-06-10 CN CN202021063875.3U patent/CN212514335U/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8011259B2 (en) | Sample carrier comprising a deformable strip of material folded back upon itself and sample holder | |
US8723144B2 (en) | Apparatus for sample formation and microanalysis in a vacuum chamber | |
US20160189929A1 (en) | Rapid tem sample preparation method with backside fib milling | |
US9741527B2 (en) | Specimen holder for a charged particle microscope | |
US8835845B2 (en) | In-situ STEM sample preparation | |
US7375325B2 (en) | Method for preparing a sample for electron microscopic examinations, and sample supports and transport holders used therefor | |
CN101361158B (en) | Ion sources, systems and methods | |
US6300631B1 (en) | Method of thinning an electron transparent thin film membrane on a TEM grid using a focused ion beam | |
JP2008026312A (en) | Plan-view sample preparation method | |
Eswara et al. | Correlative microscopy combining transmission electron microscopy and secondary ion mass spectrometry: A general review on the state-of-the-art, recent developments, and prospects | |
US10629409B2 (en) | Specimen preparation and inspection in a dual-beam charged particle microscope | |
US20040144924A1 (en) | Method for the manufacture and transmissive irradiation of a sample, and particle-optical system | |
TWI687671B (en) | Method for preparing a sample for microstructure diagnostics, and sample for microstructure diagnostics | |
US8610060B2 (en) | Charged particle beam device | |
US7354500B2 (en) | Mask and apparatus using it to prepare sample by ion milling | |
JP2009014709A5 (en) | ||
US20200035444A1 (en) | Device and method for preparing microscopic samples | |
JP2019114542A (en) | Method of sample orientation for making tem slice | |
CN108666196A (en) | Charged particle beam apparatus and sample processing method | |
CN212514335U (en) | TEM sample bears device | |
US10053768B2 (en) | Detaching probe from TEM sample during sample preparation | |
US20240234086A1 (en) | Method and device for preparing a microscopic sample from a volume sample | |
CN110595848A (en) | Preparation method of micron-sized particle transmission electron microscope sample | |
US20230003988A1 (en) | Sample holder system with freely settable inclination angles | |
KR20200124209A (en) | A device for producing flake samples and a method for producing flake samples |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210209 |