CN108010860B - Self-positioning electromigration test structure and transmission electron microscope sample preparation method - Google Patents
Self-positioning electromigration test structure and transmission electron microscope sample preparation method Download PDFInfo
- Publication number
- CN108010860B CN108010860B CN201711182113.8A CN201711182113A CN108010860B CN 108010860 B CN108010860 B CN 108010860B CN 201711182113 A CN201711182113 A CN 201711182113A CN 108010860 B CN108010860 B CN 108010860B
- Authority
- CN
- China
- Prior art keywords
- electromigration
- test structure
- line
- test
- electromigration test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention discloses a self-positioning electromigration test structure convenient for preparation of a transmission electron microscope sample and a transmission electron microscope sample preparation method, and belongs to the technical field of semiconductors. The self-aligned electromigration test structure comprises: the electromigration test structure is formed on a preset number of dielectric layers right above the electromigration test structure; and a dummy test line formed on each dielectric layer and aligned with the test line in the electromigration test structure. According to the invention, the self-positioning electromigration test structure is provided, so that a complicated process of positioning through an electron beam is not required when a transmission electron microscope sample is prepared on the basis of the self-positioning electromigration test structure in the subsequent process; the damage of electron beam irradiation to low dielectric constant materials is reduced, the preparation time of the transmission electron microscope sample is shortened, and the success rate of sample preparation is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a self-positioning electromigration test structure convenient for preparation of a transmission electron microscope sample and a preparation method of the transmission electron microscope sample.
Background
In the semiconductor manufacturing industry, a Transmission Electron Microscope (TEM) is an important tool for detecting the shape, size and characteristics of a device thin film, and has the outstanding characteristic of higher resolution, and the shape of a substance at a nanometer level can be observed. The working principle of the transmission electron microscope is as follows: the sample to be detected is placed in an observation chamber of a transmission electron microscope, the sample is irradiated by electron beams accelerated at high pressure, the appearance of the sample is amplified and projected onto a screen, a picture is obtained by photographing, and then analysis can be carried out according to the picture.
In the transmission electron microscope analysis technology, the preparation of a sample is an important link, for an Electro-Migration Test structure (EM TSK) with a long top length (UP) in a semiconductor device, a top view and a three-dimensional perspective view of the Electro-Migration Test structure are shown in fig. 1 and 2, an oxide layer with a thickness of several tens to one hundred nanometers is usually required to be reserved above a Test Line (Test Line) of the Electro-Migration Test structure to avoid damage of an Ion Beam (I-Beam for short) to the Test Line, and a protective layer is also required to be plated on the Ion Beam to protect the Test Line. However, the ion Beam irradiation depth is limited, and the position of the test line cannot be determined to accurately plate the protective layer, so that positioning in an Electron Beam (E-Beam) is required. However, some samples have an Inter-metal dielectric (Inter-metal dielectric) layer with a low dielectric constant, which is easily deformed under the irradiation of electron beams, as shown in fig. 3, the sample structure is deformed due to the irradiation of electron beams. To solve this problem, the conventional method, as shown in fig. 4 to 6, generally includes: 1) finding the position of a test structure under the high voltage of an electron beam, wherein the required speed is high, and the irradiation time is reduced as much as possible; 2) this operation also requires minimizing the electron beam irradiation time by pointing to the target position in the form of a line in the vicinity (marked by a line in the X, Y direction using the positioning principle of a two-point cross). However, in the method, the directional positioning is performed by using the electron beam, which has the disadvantages of complicated positioning process, long required time, high operation requirement, difficult popularization and incomplete solution; although the method avoids the damage of the electron beam to the low dielectric constant material in the process of plating the protective layer, the damage of the high voltage used to find the target position to the low dielectric constant material cannot be avoided; the method is still an important factor for restricting the success rate of the preparation of the transmission electron microscope sample and the quality of the picture.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a self-positioning electromigration test structure convenient for preparing a transmission electron microscope sample and a transmission electron microscope sample preparation method.
In one aspect, the present invention provides a self-positioning electromigration test structure for conveniently preparing a transmission electron microscope sample, including:
an electromigration test structure;
a preset number of dielectric layers formed right above the electromigration test structure;
and the virtual test line is formed on each dielectric layer and is aligned with the test line in the electromigration test structure.
Optionally, the preset number is specifically: the number of layers in the semiconductor device corresponding to the structure.
Optionally, the size and structure of the dummy test line on each dielectric layer are the same as those of the test line in the electromigration test structure;
alternatively, the first and second electrodes may be,
the size and the structure of the virtual test line on the topmost dielectric layer are the same as those of the test line in the electromigration test structure, and the size of the virtual test line on other dielectric layers except the topmost dielectric layer is the same as that of the test line in the electromigration test structure, and the structure of the virtual test line is a metal block.
Optionally, the structure further comprises: and a virtual monitor line formed on each dielectric layer, the virtual monitor line being aligned with the monitor line in the electromigration test structure.
On the other hand, the invention provides a transmission electron microscope sample preparation method based on the structure, which comprises the following steps:
providing an electromigration test structure;
forming a preset number of dielectric layers right above the electromigration test structure;
forming a virtual test line on each dielectric layer, wherein the virtual test line is aligned with a test line in the electromigration test structure to form a self-positioning electromigration test structure;
and preparing a transmission electron microscope sample of the electromigration test structure on the self-positioning electromigration test structure.
Optionally, forming a preset number of dielectric layers right above the electromigration test structure by adopting a chemical vapor deposition method;
optionally, a metal is deposited on each dielectric layer by using a physical vapor deposition method to form a virtual test line.
Optionally, the preset number is specifically: the number of layers in the semiconductor device corresponding to the structure.
Optionally, the size and structure of the dummy test line formed on each dielectric layer are the same as those of the test line in the electromigration test structure;
alternatively, the first and second electrodes may be,
the size and the structure of a virtual test line formed on the topmost dielectric layer are the same as those of a test line in the electromigration test structure; the virtual test line formed on other dielectric layers except the topmost dielectric layer is the same as the test line in the electromigration test structure in size, and the structure is a metal block.
Optionally, when forming a dummy test line on each dielectric layer, the method further includes: forming a virtual monitor line on each dielectric layer, wherein the virtual monitor line is aligned with the monitor line in the electromigration test structure.
Optionally, the step of preparing the transmission electron microscope sample of the electromigration test structure on the self-positioning electromigration test structure specifically includes: and cutting the virtual test line in the topmost dielectric layer of the self-positioning electromigration test structure by using a focused ion beam to obtain a transmission electron microscope sample of the electromigration test structure.
The invention has the advantages that:
in the invention, by optimizing the electromigration test structure, a plurality of dielectric layers are formed right above the electromigration test structure, and metal test structures with the same size, the same structure or similar structures are formed on the dielectric layers to form a self-positioning electromigration test structure, so that when a transmission electron microscope sample of the electromigration test structure is prepared, ion Beam (I-Beam) positioning cutting is directly carried out on the topmost dielectric layer far away from the electromigration test structure, and a complex process of positioning through an electron Beam (E-Beam) is not needed; the damage of electron beam irradiation to low dielectric constant materials is reduced, the preparation time of the transmission electron microscope sample is shortened, and the success rate of sample preparation is improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a top view of an electromigration test structure;
FIG. 2 is a three-dimensional view of an electromigration test structure;
FIG. 3 is a schematic diagram of structural deformation in a TEM sample for preparing an electromigration test structure in the prior art;
FIGS. 4 to 6 are schematic structural changes of TEM samples for preparing electromigration test structures in the prior art;
FIG. 7 is a flowchart of a method for preparing a TEM sample with an electromigration test structure according to the present invention;
FIG. 8 is a schematic diagram of an electromigration test structure according to the present invention;
FIG. 9 is a schematic diagram of a self-aligned electromigration test structure according to the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Example one
According to an embodiment of the present invention, there is provided a method for preparing a transmission electron microscope sample, as shown in fig. 7, including:
providing an electromigration test structure (Electro Migration test key, abbreviated as EM TSK);
forming a preset number of dielectric layers right above the electromigration test structure;
forming a virtual test line (TestLine) on each dielectric layer, wherein the virtual test line is aligned with a test line in the electromigration test structure to form a self-positioning electromigration test structure;
and preparing a transmission electron microscope sample of the electromigration test structure on the self-positioning electromigration test structure.
In this embodiment, an electromigration test structure in which a test line and a monitor line are formed on a first metal layer by a structural growth is described as an example, and the structure is shown in fig. 8, in which the test line and the monitor line form a second metal layer. It should be noted that the electromigration test structure provided in the present invention is not limited to the structure shown in fig. 8, which is only used for illustration.
According to the embodiment of the invention, a Chemical Vapor Deposition (CVD) method is adopted to form a preset number of dielectric layers right above the electromigration test structure; and depositing metal on each dielectric layer by adopting a Physical Vapor Deposition (PVD) method to form a virtual test line.
According to an embodiment of the present invention, the preset number is specifically: the number of layers in the semiconductor device corresponding to the structure.
For example, in the present embodiment, the semiconductor device has 4 metal layers, and 2 dielectric layers are formed directly above the electromigration test structure as shown in fig. 9.
According to the embodiment of the invention, the size and the structure of the virtual test line formed on each dielectric layer are the same as those of the test line in the electromigration test structure; alternatively, the first and second electrodes may be,
the size and the structure of a virtual test line formed on the topmost dielectric layer are the same as those of a test line in the electromigration test structure; the virtual test line formed on other dielectric layers except the topmost dielectric layer has the same size as the test line in the electromigration test structure, and the structure is a metal block.
According to the embodiment of the present invention, when forming the dummy test line on each dielectric layer, the method may further include: a dummy Line (Monitor Line) is formed on each dielectric layer, and the formed dummy Line is aligned with the Monitor Line in the electromigration test structure.
For example, in this embodiment, the dummy test line formed on each dielectric layer has the same structure as the test line in the electromigration test structure, and a dummy monitor line is formed on each dielectric layer while forming the dummy test line on each dielectric layer, and the formed dummy monitor line is aligned with the monitor line in the electromigration test structure, and accordingly, the self-aligned electromigration test structure is shown in fig. 9.
According to the embodiment of the invention, the transmission electron microscope sample of the electromigration test structure is prepared on the self-positioning electromigration test structure, which specifically comprises the following steps: and cutting a virtual test line in the topmost dielectric layer of the self-positioning electromigration test structure by using a focused Ion Beam (FIB for short) to obtain a transmission electron microscope sample of the electromigration test structure.
In the invention, a certain number of dielectric layers are formed right above the provided electromigration test structure, and a metal test structure with the same structure (forming a monitoring line and a test line) or similar structure (only forming a test line) with the electromigration test structure sample is formed on the dielectric layers to form a self-positioning electromigration test structure, so that when a transmission electron microscope sample of the electromigration test structure is prepared, ion Beam (I-Beam) positioning cutting is directly carried out on the topmost dielectric layer far away from the electromigration test structure sample, and a complex process of positioning through an electron Beam (E-Beam) is not needed; the damage of electron beam irradiation to the sample made of the low dielectric constant material is reduced, the preparation time of the transmission electron microscope sample is shortened, and the success rate of sample preparation is improved.
Example two
According to an embodiment of the present invention, there is provided a self-positioning electromigration test structure for facilitating preparation of a transmission electron microscope sample, including:
an electromigration test structure;
a preset number of dielectric layers formed right above the electromigration test structure;
and a dummy test line formed on each dielectric layer and aligned with the test line in the electromigration test structure.
According to an embodiment of the present invention, the preset number is specifically: the number of layers in the semiconductor device corresponding to the structure.
According to the embodiment of the invention, the size and the structure of the virtual test line formed on each dielectric layer are the same as those of the test line in the electromigration test structure; alternatively, the first and second electrodes may be,
the size and the structure of a virtual test line formed on the topmost dielectric layer are the same as those of a test line in the electromigration test structure; the virtual test line formed on other dielectric layers except the topmost dielectric layer has the same size as the test line in the electromigration test structure, and the structure is a metal block.
According to an embodiment of the present invention, the structure further comprises: a virtual monitor line formed on each dielectric layer, the virtual monitor line being aligned with a monitor line in the electromigration test structure.
To more clearly embody the self-aligned electromigration test structure of the present invention, one of which is shown in FIG. 9, which is intended to be illustrative only and not limiting.
In the invention, by optimizing the electromigration test structure, a plurality of dielectric layers are formed right above the electromigration test structure, and metal test structures with the same size, the same structure or similar structures are formed on the dielectric layers to form a self-positioning electromigration test structure, so that when a transmission electron microscope sample of the electromigration test structure is prepared, ion Beam (I-Beam) positioning cutting is directly carried out on the topmost dielectric layer far away from the electromigration test structure, and a complex process of positioning through an electron Beam (E-Beam) is not needed; the damage of electron beam irradiation to low dielectric constant materials is reduced, the preparation time of the transmission electron microscope sample is shortened, and the success rate of sample preparation is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. The utility model provides a from location electromigration test structure convenient to preparation of transmission electron microscope sample which characterized in that includes:
an electromigration test structure;
a preset number of dielectric layers formed right above the electromigration test structure;
a dummy test line formed on each dielectric layer, the dummy test line being aligned with a test line in the electromigration test structure; wherein the content of the first and second substances,
the size and the structure of the virtual test line on the topmost dielectric layer are the same as those of the test line in the electromigration test structure, the size of the virtual test line on other dielectric layers except the topmost dielectric layer is the same as that of the test line in the electromigration test structure, and the structure of the virtual test line is a metal block;
and a virtual monitor line formed on each dielectric layer, the virtual monitor line being aligned with the monitor line in the electromigration test structure.
2. The structure according to claim 1, characterized in that said preset number is in particular: the number of layers in the semiconductor device corresponding to the structure.
3. A method for preparing a transmission electron microscope sample based on the structure of claim 1, which is characterized by comprising the following steps:
providing an electromigration test structure;
forming a preset number of dielectric layers right above the electromigration test structure;
forming a virtual test line on each dielectric layer, wherein the virtual test line is aligned with a test line in the electromigration test structure to form a self-positioning electromigration test structure;
and preparing a transmission electron microscope sample of the electromigration test structure on the self-positioning electromigration test structure.
4. The method of claim 3,
forming a preset number of dielectric layers right above the electromigration test structure by adopting a chemical vapor deposition method;
and depositing metal on each dielectric layer by adopting a physical vapor deposition method to form a virtual test line.
5. The method according to claim 3, wherein the preset number is in particular: the number of layers in the semiconductor device corresponding to the structure.
6. The method of claim 3,
the size and the structure of a virtual test line formed on each dielectric layer are the same as those of a test line in the electromigration test structure;
alternatively, the first and second electrodes may be,
the size and the structure of a virtual test line formed on the topmost dielectric layer are the same as those of a test line in the electromigration test structure; the virtual test line formed on other dielectric layers except the topmost dielectric layer is the same as the test line in the electromigration test structure in size, and the structure is a metal block.
7. The method of claim 3, wherein forming a dummy test line on each dielectric layer further comprises: forming a virtual monitor line on each dielectric layer, wherein the virtual monitor line is aligned with the monitor line in the electromigration test structure.
8. The method according to claim 3, wherein preparing a TEM sample of the electromigration test structure on the self-aligned electromigration test structure comprises: and cutting the virtual test line in the topmost dielectric layer of the self-positioning electromigration test structure by using a focused ion beam to obtain a transmission electron microscope sample of the electromigration test structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711182113.8A CN108010860B (en) | 2017-11-23 | 2017-11-23 | Self-positioning electromigration test structure and transmission electron microscope sample preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711182113.8A CN108010860B (en) | 2017-11-23 | 2017-11-23 | Self-positioning electromigration test structure and transmission electron microscope sample preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108010860A CN108010860A (en) | 2018-05-08 |
| CN108010860B true CN108010860B (en) | 2020-03-13 |
Family
ID=62053523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711182113.8A Active CN108010860B (en) | 2017-11-23 | 2017-11-23 | Self-positioning electromigration test structure and transmission electron microscope sample preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108010860B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111257359B (en) * | 2018-11-30 | 2021-03-02 | 浙江大学 | Method for adjusting sample to align with axis of rotating shaft |
| CN110456249A (en) * | 2019-08-27 | 2019-11-15 | 上海华力微电子有限公司 | A kind of test circuit for preventing pad and probe card from burning and its application method |
| CN110579494B (en) * | 2019-09-19 | 2021-12-17 | 长江存储科技有限责任公司 | Characterization method of metal silicide |
| CN114002240A (en) * | 2021-09-27 | 2022-02-01 | 中国科学院广州地球化学研究所 | Electron microscopic three-dimensional reconstruction characterization method for geological sample microstructure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339815A (en) * | 2010-07-15 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Test structure for analyzing through-hole type metal-interconnected electromigration reliability |
| CN103280440A (en) * | 2013-05-07 | 2013-09-04 | 上海华力微电子有限公司 | Semiconductor structure and method for preparation of TEM (transmission electron microscope) samples |
| CN105118798A (en) * | 2015-08-26 | 2015-12-02 | 上海华力微电子有限公司 | Electromigration test structure and test method |
| CN107369670A (en) * | 2017-08-31 | 2017-11-21 | 长江存储科技有限责任公司 | A kind of three-dimensional storage electro-migration testing structure and preparation method thereof |
-
2017
- 2017-11-23 CN CN201711182113.8A patent/CN108010860B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339815A (en) * | 2010-07-15 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Test structure for analyzing through-hole type metal-interconnected electromigration reliability |
| CN103280440A (en) * | 2013-05-07 | 2013-09-04 | 上海华力微电子有限公司 | Semiconductor structure and method for preparation of TEM (transmission electron microscope) samples |
| CN105118798A (en) * | 2015-08-26 | 2015-12-02 | 上海华力微电子有限公司 | Electromigration test structure and test method |
| CN107369670A (en) * | 2017-08-31 | 2017-11-21 | 长江存储科技有限责任公司 | A kind of three-dimensional storage electro-migration testing structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108010860A (en) | 2018-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108010860B (en) | Self-positioning electromigration test structure and transmission electron microscope sample preparation method | |
| US10529538B2 (en) | Endpointing for focused ion beam processing | |
| JP6174584B2 (en) | Viewing angle mill | |
| JP5882381B2 (en) | Slice and view with decoration | |
| US20180301319A1 (en) | Fiducial design for tilted or glancing mill operations with a charged particle beam | |
| CN103808540B (en) | Transmission electron microscope sample preparation method | |
| JP6644127B2 (en) | Method and system for reducing curtaining in charged particle beam sample preparation | |
| TW201015057A (en) | Method for manufacturing an electron tomography specimen with fiducial markers and method for constructing 3D image | |
| CN105352768A (en) | TEM sample positioning method | |
| JP2002174571A (en) | Thinning and working for tem sample | |
| US7317188B2 (en) | TEM sample preparation from a circuit layer structure | |
| CN107860620B (en) | Transmission electron microscope sample and preparation method thereof | |
| US11437217B2 (en) | Method for preparing a sample for transmission electron microscopy | |
| CN105097580A (en) | Focused ion beam analysis method | |
| CN104697836A (en) | TEM sample preparation method | |
| JP2001311681A (en) | Method for preparing sample for transmission electron microscope observation and sampling apparatus | |
| CN108109895B (en) | Needle-shaped test piece, preparation method and its analysis method | |
| US8819926B2 (en) | Methods and apparatuses of using metal needle arrays for specimen lift-out and circuit edit | |
| LEE et al. | Post‐thinning using Ar ion‐milling system for transmission electron microscopy specimens prepared by focused ion beam system | |
| JP2018100953A (en) | Method for marking and method for preparing analyzing sample | |
| Kwon et al. | Automated Sample Depth Targeting with Low kV Cleaning by Focused Ion Beam Microscopy for Atom Probe Tomography | |
| Park et al. | FIB overview | |
| CN112881439A (en) | OLED TEM sample preparation method and OLED TEM sample | |
| US8816278B1 (en) | Imaging methods | |
| Alvis et al. | Site-Specific Sample Preparation Method for Atom Probe Tomography on Semiconductor Devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |