CN114267756A - Preparation method of light-emitting diode epitaxial wafer and epitaxial wafer - Google Patents
Preparation method of light-emitting diode epitaxial wafer and epitaxial wafer Download PDFInfo
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Abstract
The invention discloses a preparation method of a light emitting diode epitaxial wafer and the epitaxial wafer.A first sublayer grows under the condition that argon is used as carrier gas, and the argon has larger atomic mass, so that higher momentum can be provided, the transverse migration efficiency of Al atoms is improved, the transverse growth of the first sublayer is promoted, the surface roughness and the defect density of the first sublayer and a subsequently grown second sublayer can be reduced, and the crystal quality is improved; however, the first sublayer has a high growth rate and is easy to generate edge dislocation, the second sublayer is grown by using hydrogen as carrier gas, and the hydrogen has low molecular mass and high molecular motion activity during growth, so that the hydrogen has the effects of etching and recrystallizing crystals with poor crystal quality, the edge dislocation is reduced, and the crystal quality is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof.
Background
In recent years, AlGaN materials are receiving attention due to their great application potential in ultraviolet photoelectric devices, and ultraviolet LEDs have the characteristics of high photon energy, short wavelength, small size, low power consumption, long service life, environmental friendliness, and the like, and have wide applications in the fields of high color rendering index white light illumination, high-density optical data storage, sensors, lithography, air purification, environmental protection, and the like.
In the conventional AlGaN-based ultraviolet LED structure, electrons are easy to overflow into a P-type doped AlGaN layer through a multi-quantum well layer due to the fact that the electrons have small effective mass and high mobility; therefore, an electron barrier layer doped with an Al component is usually required to be arranged between the multiple quantum well layer and the P-type doped AlGaN layer, and under normal conditions, the higher the Al component in the electron barrier layer is, the better the electron blocking effect is, but as the Al component is more, the higher the adhesion coefficient of Al atoms is, the lower the lateral migration rate in the epitaxial growth process is, the higher the defect density of the electron barrier layer is, and the uneven surface is caused, so that the appearance of the subsequently grown P-type doped AlGaN layer is also affected, and the crystal quality is reduced; meanwhile, the P-type doped AlGaN layer also comprises Al with high component content, so that the activation efficiency of metal particles doped in the P-type doped AlGaN layer is low, the hole concentration is low, and the recombination efficiency of electrons and holes is also low.
Therefore, how to reduce the structural defects of the P-type doped AlGaN layer and improve the crystal quality becomes a problem that needs to be improved in the prior art.
Disclosure of Invention
The application aims to provide a preparation method of a light-emitting diode epitaxial wafer and the epitaxial wafer, so as to solve the problems of reducing the structural defects of a P-type doped AlGaN layer and improving the crystal quality.
The scheme adopted by the application to solve the technical problems is as follows:
in a first aspect, the present application provides a method for preparing an led epitaxial wafer, which at least includes a substrate and a stacked structure, where the stacked structure at least includes a multiple quantum well layer, an electron blocking layer, and a P-type doped AlGaN layer, and the step of preparing the P-type doped AlGaN layer includes:
growing a first P-type doped AlGaN layer as a first sublayer by taking argon as a carrier gas;
continuously growing a second P-type doped AlGaN layer on the first sublayer by taking hydrogen as a carrier gas to serve as a second sublayer; and obtaining the P-type doped AlGaN layer with at least two layers of structures.
In some embodiments of the present application, after preparing the second sub-layer, annealing the second sub-layer in a nitrogen atmosphere is further included.
In some embodiments of the present application, the growth temperature of the second sub-layer is 1000-.
In some embodiments of the present application, the steps of preparing the first sub-layer and the second sub-layer are repeated to obtain a P-type doped AlGaN layer having a plurality of first sub-layers and a plurality of second sub-layers which are alternately stacked, wherein each of the first sub-layers and each of the second sub-layers are alternately disposed.
In some embodiments of the present application, after the P-doped AlGaN layer is formed, a contact layer is formed on the P-doped AlGaN layer.
In some embodiments of the present application, before the preparing the multiple quantum well layer, a buffer layer, an undoped AlGaN layer, and an N-type doped AlGaN layer are sequentially prepared on the substrate.
In some embodiments of the present application, the Al component in the first and second sublayers has a mass content ratio of 10% to 50%.
In a second aspect, the present application further provides a light emitting diode epitaxial wafer, which at least includes a substrate and a stacked structure, where the stacked structure at least includes a multiple quantum well layer, an electron blocking layer, and a P-type doped AlGaN layer, and the P-type doped AlGaN layer includes:
the first sublayer is prepared by growing a first P-type doped AlGaN layer by taking argon as carrier gas;
the second sublayer is arranged on the first sublayer and is made by continuously growing a second P-type doped AlGaN layer by taking hydrogen as carrier gas; the P-type doped AlGaN layer has at least two layers of structures.
In some embodiments of the present application, after the second P-type doped AlGaN layer is grown using hydrogen as a carrier gas, annealing is performed in a nitrogen atmosphere to form the second sub-layer.
In some embodiments of the present application, the P-doped AlGaN layer includes a plurality of alternating first sublayers and second sublayers, wherein each of the first sublayers and each of the second sublayers are alternately disposed.
According to the preparation method of the light-emitting diode epitaxial wafer and the epitaxial wafer, the first sublayer grows under the condition that argon is used as carrier gas, and the argon has large atomic mass, so that higher momentum can be provided, the transverse migration efficiency of Al atoms is improved, the transverse growth of the first sublayer is promoted, the surface roughness and the defect density of the first sublayer and a subsequently grown second sublayer can be reduced, and the crystal quality is improved; however, the first sublayer has a high growth rate and is easy to generate edge dislocation, the second sublayer is grown by using hydrogen as carrier gas, and the hydrogen has low molecular mass and high molecular motion activity during growth, so that the hydrogen has the effects of etching and recrystallizing crystals with poor crystal quality, the edge dislocation is reduced, and the crystal quality is further improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a view showing the structure of an epitaxial wafer according to the present invention;
fig. 2 is a process diagram of the epitaxial wafer fabrication method of the present invention.
Description of the element symbols:
the GaN-based solar cell comprises a substrate 1, a buffer layer 2, an undoped AlGaN layer 3, an N-type doped AlGaN layer 4, a multi-quantum well layer 5, an electron blocking layer 6, a P-type doped GaN layer 7, a contact layer 8, a first sublayer 71 and a second sublayer 72.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments, not all embodiments, of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be considered as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or including indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as exemplary is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles disclosed herein.
Particularly, for AlGaN-based ultraviolet LEDs, many technical difficulties are encountered in development, for example, electrons themselves have small effective mass and high mobility, so that many electrons easily overflow to a P layer through a quantum well; with the increase of Al component, the problems of high defect density, uneven surface and the like of an epitaxially grown AlGaN film are easily caused, and it is difficult to obtain an AlGaN material with high crystal quality, and compared with a GaN material, the AlGaN material with high Al component is more difficult no matter N type doping or P type doping, especially the doping of P-AlGaN is troublesome, the activation efficiency of dopant Mg is low, so that the hole is insufficient, and the radiation recombination efficiency is reduced; in addition, the quantum efficiency in the AlGaN-based ultraviolet LED is lower than that of a blue-green light emitting diode, and the performance of the ultraviolet light emitting diode is severely limited. In order to improve the quantum efficiency of the ultraviolet LED, it is necessary to prepare p-type and n-type AlGaN materials with high conductivity, as well as epitaxial layers with high crystal quality and quantum well structures with high internal quantum efficiency.
The quantum efficiency in the existing AlGaN-based ultraviolet LED is lower than that of a blue-green light emitting diode, and the electron hole radiation recombination efficiency is lower due to high activation energy and low hole concentration of P-type doped AlGaN. When a GaN material is adopted for P-type doping, the hole concentration can be improved, but in an ultraviolet LED, GaN absorbs ultraviolet light seriously, which is not beneficial to the extraction efficiency of the ultraviolet light; when the AlGaN material is adopted for P-type doping, the absorption of the material to ultraviolet light can be reduced, and the extraction efficiency of the ultraviolet light is improved, but the activation energy of the AlGaN material for P-type doping is higher, so that the hole concentration is not high, and the luminous efficiency of the ultraviolet LED is reduced.
Example 1: referring to fig. 1, a main body of this embodiment is a method for manufacturing an led epitaxial wafer, which at least includes a substrate 1 and a stacked structure, where the stacked structure at least includes a multiple quantum well layer 5, an electron blocking layer 6, and a P-type doped AlGaN layer disposed from bottom to top, and the method for manufacturing the P-type doped AlGaN layer includes the following steps: growing a first P-type doped AlGaN layer as a first sublayer 71 by taking argon as a carrier gas; continuing to grow a second P-type doped AlGaN layer as a second sublayer 72 on the first sublayer 71 by taking hydrogen as a carrier gas; and obtaining the P-type doped AlGaN layer with at least two layers of structures. The adhesion coefficient of Al atoms is higher, the migration rate is slower during epitaxial growth, and the crystal quality of the obtained epitaxial layer is not high; the first sublayer 71 grows under the condition that argon is used as carrier gas, and the argon has larger atomic mass, so that higher momentum can be provided, the transverse migration efficiency of Al atoms is improved, the transverse growth of the first sublayer 71 is promoted, the surface roughness and the defect density of the first sublayer 71 and the subsequently grown second sublayer 72 can be reduced, and the crystal quality is improved; however, the epitaxial layer can laterally migrate and merge on the surface to form a thin film in the growth process; the growth rate of the first sublayer 71 is high, edge dislocation is easily generated on the combined interface of the first sublayer 71 and other layers, the hydrogen is used as carrier gas to grow the second sublayer 72, and the molecular motion activity is high during growth due to the low molecular mass of the hydrogen, so that the hydrogen has the effects of etching and recrystallizing crystals with poor crystal quality, edge dislocation is reduced, and the crystal quality is further improved.
In some embodiments of the present application, after preparing the second sub-layer 72, annealing the second sub-layer 72 in a nitrogen atmosphere is further included. In the traditional preparation process, the contact layer 8 is mostly prepared after the P-type doped AlGaN layer is prepared, and the outside-furnace unified annealing is carried out after the contact layer 8 is prepared; in the embodiment, furnace annealing is performed after the second sublayer 72 is prepared, the furnace annealing is equivalent to uninterrupted annealing, and compared with furnace annealing, the influence of air and partial steam outside the furnace on the epitaxial layer annealing process can be reduced; after the second sublayer 72 is prepared, growth is interrupted, and only nitrogen is introduced to carry out annealing treatment on the second sublayer 72, so that annealing treatment is added to activate holes in the growth process, and compared with the annealing treatment outside the furnace in the traditional process, the annealing treatment on the second sublayer 72 in the furnace can fully activate the doped Mg, and the hole activation efficiency is higher.
In some embodiments of the present application, the growth temperature of the second sub-layer 72 is 1000-. The hydrogen has low molecular mass, strong molecular motion activity during growth, particularly stronger molecular activity at high temperature, and can have an etching effect on crystals with poor crystal quality due to violent thermal motion of the hydrogen, particularly can have an etching effect on the first sublayer 71 and the growing second sublayer 72, and reduce the edge dislocation density by recrystallization after etching off crystals with edge dislocation defects, thereby further improving the crystal quality. In particular, a growth temperature of 1050-. The thickness of the second sub-layer 72 can be controlled to be 2-5nm, the growth pressure is 50Torr-100Torr, the doping concentration of Mg is 1019cm-3-1020cm-3, and the Al component in the AlGaN layer is 0.1-0.5.
In some embodiments of the present application, the steps of preparing the first sub-layer 71 and the second sub-layer 72 are repeated to obtain a P-type doped AlGaN layer having a plurality of first sub-layers 71 and a plurality of second sub-layers 72 alternating in multiple layers, where each of the first sub-layers 71 and each of the second sub-layers 72 are alternately disposed. The thickness of the first sub-layer 71 is 2-10nm, the thickness of the second sub-layer 72 is 2-5nm, and the thickness of the whole P-type doped AlGaN layer is 50-200 nm; and in the whole process of preparing the P-type doped AlGaN layer, the growth temperature is controlled to be between 1000 and 1100 ℃, the growth pressure interval is 50to 100Torr, the Mg doping concentration is 1019cm-3-1020cm-3And the Al component in the AlGaN layer is between 0.1 and 0.5.
In some embodiments of the present application, after the P-doped AlGaN layer is formed, the method further includes forming a contact layer 8 on the P-doped AlGaN layer. The thickness is 10nm to 50nm, the growth temperature range is 1000 ℃ to 1100 ℃, the growth pressure range is 50Torr to 100Torr, and the Al component is 0.0 to 0.3. And the contact layer 8 is an AlGaN contact layer 8.
In some embodiments of the present application, referring to fig. 2, before the multiple quantum well layer 5 is prepared, a buffer layer 2, an undoped AlGaN layer 3, and an N-type doped AlGaN layer 4 are sequentially prepared on a substrate 1. The specific preparation steps further comprise: s1: providing a sapphire Al2O3 substrate 1; s2: growing an AlN buffer layer 2 on the substrate 1 by PVD; s3: the buffer layer 2 is subjected to in-situ annealing treatment in MOCVD under hydrogen atmosphere; s4: after the annealing is finished, growing an undoped AlGaN layer with the thickness of 1.0 to 3.0 microns; s5: after the growth of the undoped AlGaN layer is finished, growing a Si-doped N-type AlGaN layer; s6: growing a multi-quantum well layer 5 after the growth of the N-type doped AlGaN layer 4 is finished; s7: growing an AlGaN electronic barrier layer 6 after the multi-quantum well layer 5 grows; s8: growing a P-type doped AlGaN layer, preparing a periodic structure with a plurality of first sub-layers 71 and a plurality of second sub-layers 72 which are alternated, and annealing after each second sub-layer 72 is prepared; s9: an AlGaN contact layer 8 is grown on the P-type doped GaN layer 7.
In some embodiments of the present application, the mass content ratio of the Al component in the first sublayer 71 and the second sublayer 72 is 10% to 50%. More specifically, the mass content of the Al component can be selected to be 50%, and in the process preparation of the present application, the mobility of Al can be increased, and even if a larger mass content of the Al component is selected, the crystal quality is not reduced.
Example 2: the embodiment also provides a light emitting diode epitaxial wafer, which at least comprises a substrate 1 and a laminated structure, wherein the laminated structure at least comprises a multiple quantum well layer 5, an electron blocking layer 6 and a P-type doped AlGaN layer which are arranged from bottom to top, and the P-type doped AlGaN layer comprises: the first sublayer 71 is formed by growing a first P-type doped AlGaN layer by taking argon as a carrier gas; the second sublayer 72 is arranged on the first sublayer 71 and is made by continuously growing a second P-type doped AlGaN layer by taking hydrogen as a carrier gas; the P-type doped AlGaN layer has at least two layers of structures.
In some embodiments of the present application, after the second P-type doped AlGaN layer is grown using hydrogen as a carrier gas, annealing is performed in a nitrogen atmosphere to form the second sub-layer 72. In some embodiments of the present application, the P-type doped AlGaN layer includes a plurality of first sublayers 71 and a plurality of second sublayers 72 alternating with each other, wherein each of the first sublayers 71 and each of the second sublayers 72 are alternately disposed.
Example 3: the embodiment specifically discloses a preparation method of an epitaxial wafer of a light-emitting diode, which is particularly used for preparing an AlGaN-based ultraviolet light-emitting diode epitaxial wafer; the method comprises the following steps:
the first step is as follows: sapphire Al2O3 with a (0001) crystal orientation is used as a substrate 1;
the second step is that: an AlN buffer layer 2 is grown on a substrate 1 using PVD. The growth temperature is 400-; growing an AlN buffer layer 2 with the thickness of 15 to 50 nm;
the third step: the buffer layer 2 is subjected to in-situ annealing treatment in MOCVD under the hydrogen atmosphere, the temperature is 1000-1200 ℃, the pressure range is 150-500 Torr, and the time is 5-10 minutes;
the fourth step: after the annealing is finished, the temperature is adjusted to 1050-1200 ℃, an undoped AlGaN layer with the thickness of 1.0-3.0 microns is grown, the growth pressure is 50-100 Torr, and the Al component is 0.3-0.8;
the fifth step: after the growth of the undoped AlGaN layer is finished, a Si-doped N-type AlGaN layer grows, the thickness of the Si-doped N-type AlGaN layer is 1.0-3.0 microns, the growth temperature is 1100-1200 ℃, the pressure is 50Torr-100Torr, and the Si doping concentration is 1019cm-3-1020cm-3The Al component is between 0.2 and 0.6;
and a sixth step: after the growth of the N-type doped AlGaN layer 4 is finished, a multi-quantum well structure (MQW) is grown, wherein the multi-quantum well layer 5(MQW) is composed of 5-12 periods of GaN/AlGaN, wherein GaN is a well layer, AlGaN is a barrier layer, the thickness of a single GaN well layer in the MQW is 2-4nm, the growth temperature range is 900-1000 ℃, and the pressure range is between 50Torr and 200 Torr; the thickness of a single AlGaN barrier layer is between 8 and 20nm, the growth temperature is between 1000 and 1100 ℃, the growth pressure is between 50 and 100Torr, and the Al component is between 0.1 and 0.5;
the seventh step: after the growth of the multi-quantum well layer 5MQW, growing the AlGaN electronic barrier layer 6EBL at the growth temperature of between 1000 and 1100 ℃, at the growth pressure of between 50 and 100Torr, at the growth thickness of between 20 and 100nm and at the Al component of between 0.1 and 0.5;
eighth step: after the electron blocking layer 6EBL grows, a P-type doped AlGaN layer is grown, and the P-type doped AlGaN layer is composed of a plurality of first sub-layers 71, second sub-layers 72 and third sub-layers which alternately grow periodically, wherein the first sub-layers 71 are P-type doped AlGaN sub-layers which grow by taking argon (Ar) as carrier gas, and the second sub-layers 72 are hydrogen (H) gas2) The growth of the P-type doped AlGaN sublayer is interrupted by the third sublayer, and only nitrogen (N) is introduced2) Annealing the second sublayer 72 at 800-2The annealing time is 5-10s, the total thickness of the P-type doped AlGaN layer is 50-200nm, the growth temperature is 1000-1100 ℃, the growth pressure interval is 50Torr-100Torr, the Mg doping concentration is 1019cm-3-1020cm-3The Al component in the AlGaN layer is between 0.1 and 0.5;
the ninth step: an AlGaN contact layer 8 is grown on the P-type doped GaN layer 7, the thickness is 10nm to 50nm, the growth temperature range is 1000 ℃ to 1100 ℃, the growth pressure range is 50Torr to 100Torr, and the Al component is 0.0 to 0.3.
Wherein trimethylaluminum (TMAl), trimethylgallium or triethylgallium (TMGa or TEGa), NH3 are used as precursors of group III source and group V source respectively, silane and dicyclopentadienyl magnesium are used as precursors of N-type dopant and P-type dopant respectively, Ar, N2And H2As a carrier gas. The AlGaN-based ultraviolet light-emitting diode epitaxial wafer prepared by the embodiment can improve the light extraction efficiency of an ultraviolet LED by improving the Al component content, and can not reduce the hole concentration and the crystal quality of the epitaxial layer.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again.
Having thus described the basic concept, it will be apparent to those skilled in the art that the foregoing detailed disclosure is to be considered merely illustrative and not restrictive of the broad application. Various modifications, improvements and adaptations to the present application may occur to those skilled in the art, although not explicitly described herein. Such modifications, improvements and adaptations are proposed in the present application and thus fall within the spirit and scope of the exemplary embodiments of the present application.
Also, this application uses specific language to describe embodiments of the application. Reference throughout this specification to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic described in connection with at least one embodiment of the present application is included in at least one embodiment of the present application. Therefore, it is emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, some features, structures, or characteristics of one or more embodiments of the present application may be combined as appropriate.
Similarly, it should be noted that in the preceding description of embodiments of the application, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure aiding in the understanding of one or more of the embodiments. This method of disclosure, however, is not intended to require more features than are expressly recited in the claims. Indeed, the embodiments may be characterized as having less than all of the features of a single embodiment disclosed above.
Numerals describing the number of components, attributes, etc. are used in some embodiments, it being understood that such numerals used in the description of the embodiments are modified in some instances by the use of the modifier "about", "approximately" or "substantially". Unless otherwise indicated, "about", "approximately" or "substantially" indicates that the number allows a variation of ± 20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximations that may vary depending upon the desired properties of the individual embodiments. In some embodiments, the numerical parameter should take into account the specified significant digits and employ a general digit preserving approach. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the range are approximations, in the specific examples, such numerical values are set forth as precisely as possible within the scope of the application.
For each patent, patent application publication, and other material cited in this application, such as articles, books, specifications, publications, documents, and the like, the entire contents of which are hereby incorporated by reference into this application, except for application history documents that are inconsistent with or conflict with the contents of this application, and except for documents that are currently or later become incorporated into this application as though fully set forth in the claims below. It is noted that the descriptions, definitions and/or use of terms in this application shall control if they are inconsistent or contrary to the present disclosure.
The technical solutions provided by the embodiments of the present application are described in detail above, and the principles and embodiments of the present invention are explained herein by using specific examples, and the descriptions of the above embodiments are only used to help understanding the method and the core ideas of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A preparation method of a light emitting diode epitaxial wafer is characterized by at least comprising a substrate and a laminated structure, wherein the laminated structure at least comprises a multi-quantum well layer, an electronic barrier layer and a P-type doped AlGaN layer which are arranged from bottom to top, and the preparation of the P-type doped AlGaN layer comprises the following steps:
growing a first P-type doped AlGaN layer as a first sublayer by taking argon as a carrier gas;
and continuously growing a second P-type doped AlGaN layer on the first sublayer by taking hydrogen as a carrier gas to serve as a second sublayer.
2. The method for preparing the light-emitting diode epitaxial wafer according to claim 1, further comprising annealing the second sub-layer in a nitrogen atmosphere after preparing the second sub-layer.
3. The method as claimed in claim 1, wherein the growth temperature of the second sub-layer is 1000-1100 ℃.
4. The method for preparing the light-emitting diode epitaxial wafer according to claim 2, wherein the steps of preparing the first sub-layer and the second sub-layer are repeated to obtain the P-type doped AlGaN layer with a plurality of first sub-layers and a plurality of second sub-layers which are alternately arranged, wherein each first sub-layer and each second sub-layer are alternately arranged.
5. The method for preparing the light-emitting diode epitaxial wafer is characterized by further comprising the step of preparing a contact layer on the P-type doped AlGaN layer after the P-type doped AlGaN layer is prepared.
6. The method for preparing the light-emitting diode epitaxial wafer according to claim 1, further comprising preparing a buffer layer, an undoped AlGaN layer and an N-type doped AlGaN layer on the substrate in sequence before preparing the multiple quantum well layer.
7. The method for preparing the light-emitting diode epitaxial wafer according to claim 1, wherein the mass content ratio of the Al component in the first sub-layer to the second sub-layer is 10% -50%.
8. The light-emitting diode epitaxial wafer is characterized by at least comprising a substrate and a laminated structure, wherein the laminated structure at least comprises a multi-quantum well layer, an electronic barrier layer and a P-type doped AlGaN layer which are arranged from bottom to top, and the P-type doped AlGaN layer comprises:
the first sublayer is prepared by growing a first P-type doped AlGaN layer by taking argon as carrier gas;
the second sublayer is arranged on the first sublayer and is made by continuously growing a second P-type doped AlGaN layer by taking hydrogen as carrier gas; the P-type doped AlGaN layer has at least two layers of structures.
9. The light-emitting diode epitaxial wafer according to claim 8, wherein after the second P-type doped AlGaN layer is grown by using hydrogen as a carrier gas, the second sub-layer is formed by annealing in a nitrogen atmosphere.
10. The light emitting diode epitaxial wafer of claim 8, wherein the P-doped AlGaN layer comprises a plurality of alternating first sublayers and second sublayers, wherein each of the first sublayers and each of the second sublayers are arranged alternately.
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