CN114235836A - 一种用于半导体缺陷检测的系统 - Google Patents
一种用于半导体缺陷检测的系统 Download PDFInfo
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- CN114235836A CN114235836A CN202111547540.8A CN202111547540A CN114235836A CN 114235836 A CN114235836 A CN 114235836A CN 202111547540 A CN202111547540 A CN 202111547540A CN 114235836 A CN114235836 A CN 114235836A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 230000007547 defect Effects 0.000 title claims abstract description 38
- 238000001514 detection method Methods 0.000 claims abstract description 53
- 238000002189 fluorescence spectrum Methods 0.000 claims abstract description 13
- 238000005424 photoluminescence Methods 0.000 claims abstract description 9
- 238000000241 photoluminescence detection Methods 0.000 claims abstract description 8
- 238000002073 fluorescence micrograph Methods 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims description 51
- 230000000903 blocking effect Effects 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000007689 inspection Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 235000005811 Viola adunca Nutrition 0.000 claims description 4
- 240000009038 Viola odorata Species 0.000 claims description 4
- 235000013487 Viola odorata Nutrition 0.000 claims description 4
- 235000002254 Viola papilionacea Nutrition 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 53
- 230000003993 interaction Effects 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000001194 electroluminescence spectrum Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002503 electroluminescence detection Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114705698A (zh) * | 2022-06-02 | 2022-07-05 | 季华实验室 | 缺陷检测方法、装置、系统及存储介质 |
CN114770224A (zh) * | 2022-05-25 | 2022-07-22 | 北京理工大学 | 一种超精密加工刀痕在位检测方法 |
CN115266758A (zh) * | 2022-09-27 | 2022-11-01 | 苏州高视半导体技术有限公司 | 晶圆检测系统、晶圆检测方法、电子设备及存储介质 |
CN115524345A (zh) * | 2022-11-25 | 2022-12-27 | 深圳市壹倍科技有限公司 | 一种用于半导体的缺陷检测光学系统 |
CN115855971A (zh) * | 2023-02-28 | 2023-03-28 | 深圳市壹倍科技有限公司 | 半导体缺陷检测系统 |
CN117012663A (zh) * | 2023-08-24 | 2023-11-07 | 上海优睿谱半导体设备有限公司 | 晶圆缺陷检测系统及方法 |
CN117894706A (zh) * | 2024-03-15 | 2024-04-16 | 季华实验室 | 多模态晶圆检测系统及方法 |
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JPH07325012A (ja) * | 1994-05-30 | 1995-12-12 | Nippon Telegr & Teleph Corp <Ntt> | 光学部品の反射率測定方法、及び装置 |
JPH11281576A (ja) * | 1998-12-11 | 1999-10-15 | Mitsui Mining & Smelting Co Ltd | 結晶内のフォトルミネッセンス計測装置 |
US20110031410A1 (en) * | 2009-08-06 | 2011-02-10 | Yokogawa Electric Corporation | Method for measuring fluorescent light amount or light absorption amount and device for measuring the same |
CN102768015A (zh) * | 2012-07-05 | 2012-11-07 | 哈尔滨工业大学 | 荧光响应随动针孔显微共焦测量装置 |
JP5633099B1 (ja) * | 2013-12-18 | 2014-12-03 | レーザーテック株式会社 | 欠陥分類方法及び検査装置 |
CN105861299A (zh) * | 2016-05-05 | 2016-08-17 | 广东顺德工业设计研究院(广东顺德创新设计研究院) | 微滴式数字pcr荧光检测系统和荧光检测装置 |
KR102067972B1 (ko) * | 2018-09-21 | 2020-01-20 | 주식회사 에타맥스 | 광루미네선스와 산란광의 동시 검출이 가능한 발광다이오드 검사장비 |
CN210294061U (zh) * | 2016-12-22 | 2020-04-10 | 株式会社埃塔麦斯 | 同时检测光致发光和散射光的缺陷检查装置 |
CN111060516A (zh) * | 2019-12-10 | 2020-04-24 | 中国工程物理研究院激光聚变研究中心 | 光学元件亚表面缺陷的多通道原位检测装置及检测方法 |
CN111208064A (zh) * | 2020-03-06 | 2020-05-29 | 中国工程物理研究院激光聚变研究中心 | 一种光学元件亚表面缺陷快速检测装置和检测方法 |
CN112285090A (zh) * | 2020-09-29 | 2021-01-29 | 军事科学院系统工程研究院卫勤保障技术研究所 | 一种便携式共焦单细胞拉曼散射检测系统 |
-
2021
- 2021-12-16 CN CN202111547540.8A patent/CN114235836A/zh active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07325012A (ja) * | 1994-05-30 | 1995-12-12 | Nippon Telegr & Teleph Corp <Ntt> | 光学部品の反射率測定方法、及び装置 |
JPH11281576A (ja) * | 1998-12-11 | 1999-10-15 | Mitsui Mining & Smelting Co Ltd | 結晶内のフォトルミネッセンス計測装置 |
US20110031410A1 (en) * | 2009-08-06 | 2011-02-10 | Yokogawa Electric Corporation | Method for measuring fluorescent light amount or light absorption amount and device for measuring the same |
CN102768015A (zh) * | 2012-07-05 | 2012-11-07 | 哈尔滨工业大学 | 荧光响应随动针孔显微共焦测量装置 |
JP5633099B1 (ja) * | 2013-12-18 | 2014-12-03 | レーザーテック株式会社 | 欠陥分類方法及び検査装置 |
CN105861299A (zh) * | 2016-05-05 | 2016-08-17 | 广东顺德工业设计研究院(广东顺德创新设计研究院) | 微滴式数字pcr荧光检测系统和荧光检测装置 |
CN210294061U (zh) * | 2016-12-22 | 2020-04-10 | 株式会社埃塔麦斯 | 同时检测光致发光和散射光的缺陷检查装置 |
KR102067972B1 (ko) * | 2018-09-21 | 2020-01-20 | 주식회사 에타맥스 | 광루미네선스와 산란광의 동시 검출이 가능한 발광다이오드 검사장비 |
CN111060516A (zh) * | 2019-12-10 | 2020-04-24 | 中国工程物理研究院激光聚变研究中心 | 光学元件亚表面缺陷的多通道原位检测装置及检测方法 |
CN111208064A (zh) * | 2020-03-06 | 2020-05-29 | 中国工程物理研究院激光聚变研究中心 | 一种光学元件亚表面缺陷快速检测装置和检测方法 |
CN112285090A (zh) * | 2020-09-29 | 2021-01-29 | 军事科学院系统工程研究院卫勤保障技术研究所 | 一种便携式共焦单细胞拉曼散射检测系统 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114770224A (zh) * | 2022-05-25 | 2022-07-22 | 北京理工大学 | 一种超精密加工刀痕在位检测方法 |
CN114770224B (zh) * | 2022-05-25 | 2024-03-08 | 北京理工大学 | 一种超精密加工刀痕在位检测方法 |
CN114705698A (zh) * | 2022-06-02 | 2022-07-05 | 季华实验室 | 缺陷检测方法、装置、系统及存储介质 |
CN115266758A (zh) * | 2022-09-27 | 2022-11-01 | 苏州高视半导体技术有限公司 | 晶圆检测系统、晶圆检测方法、电子设备及存储介质 |
CN115524345A (zh) * | 2022-11-25 | 2022-12-27 | 深圳市壹倍科技有限公司 | 一种用于半导体的缺陷检测光学系统 |
CN115855971A (zh) * | 2023-02-28 | 2023-03-28 | 深圳市壹倍科技有限公司 | 半导体缺陷检测系统 |
CN117012663A (zh) * | 2023-08-24 | 2023-11-07 | 上海优睿谱半导体设备有限公司 | 晶圆缺陷检测系统及方法 |
CN117012663B (zh) * | 2023-08-24 | 2024-06-11 | 上海优睿谱半导体设备有限公司 | 晶圆缺陷检测系统及方法 |
CN117894706A (zh) * | 2024-03-15 | 2024-04-16 | 季华实验室 | 多模态晶圆检测系统及方法 |
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