CN114204285A - Millimeter wave array antenna with high-gain low-sidelobe level characteristics - Google Patents

Millimeter wave array antenna with high-gain low-sidelobe level characteristics Download PDF

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Publication number
CN114204285A
CN114204285A CN202111571830.6A CN202111571830A CN114204285A CN 114204285 A CN114204285 A CN 114204285A CN 202111571830 A CN202111571830 A CN 202111571830A CN 114204285 A CN114204285 A CN 114204285A
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China
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dielectric plate
etched
slot
millimeter wave
sidelobe level
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CN202111571830.6A
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马文宇
曹文权
张邦宁
王闯
李丹华
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Army Engineering University of PLA
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Army Engineering University of PLA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/064—Two dimensional planar arrays using horn or slot aerials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/002—Protection against seismic waves, thermal radiation or other disturbances, e.g. nuclear explosion; Arrangements for improving the power handling capability of an antenna
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/068—Two dimensional planar arrays using parallel coplanar travelling wave or leaky wave aerial units

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

A millimeter wave array antenna with high gain and low sidelobe level characteristics comprises a GCPW feed structure, a one-to-four power divider and a quaternary TE resonant cavity based on SIW440A slot leaky-wave antenna array of the mode; the upper surface and the lower surface along the length direction of the lower dielectric plate are respectively covered with a lower metal surface and a metal ground, and four groups of coupling gap pairs which are periodically arranged and a GCPW feed structure are etched on the lower metal surface; the one-to-four power divider is symmetrically arranged on the lower dielectric plate, and a group of metalized through holes are uniformly etched along the periphery of the upper dielectric plate; quaternary SIW-based resonant cavity TE440The slot leaky-wave antenna array of the die is positioned on an upper dielectric plate, and four groups of metalized through hole arrays which are periodically arranged are etched on the upper dielectric plate. The invention adoptsThe GCPW lateral feeding is used for realizing effective excitation of the planar antenna, the feeding form is simple, the high-gain characteristic with ultralow sidelobe level is realized, and the GCPW lateral feeding has potential application value in systems of 5G mobile communication, satellite communication, millimeter wave communication and the like in the future.

Description

Millimeter wave array antenna with high-gain low-sidelobe level characteristics
Technical Field
The invention relates to a slot leaky-wave antenna, in particular to a millimeter wave array antenna with high-gain and low-sidelobe level characteristics.
Background
Large system capacity, high data rate, low latency and large scale device connectivity are performance goals for fifth generation (5G) mobile communication technologies. The 5G millimeter wave (mmW) band has richer spectrum resources and available area than the increasingly crowded band below 6 GHz. However, the millimeter wave antenna has the disadvantages of large transmission loss, small structural size, high processing precision, high processing cost and the like.
In the design process of the high-gain millimeter wave antenna, generally, the more the array elements, the higher the gain, however, the more the feed network is complex, and the greater the transmission loss is. If a large antenna unit can be used to replace the radiation effect of a plurality of traditional units, the number of units can be reduced, thereby simplifying the feed network and reducing the feed loss. Therefore, the concept of an Electrically Large (ELP) size antenna has been proposed. Electrically large antennas break the limitation of the size (half wavelength) of conventional resonant antennas, which can exceed one wavelength, even multiple wavelengths.
However, when the size of the antenna element is larger than half of the operating wavelength, the array element spacing increases, which will result in the antenna array gradually generating high side lobe levels. The generation of high side lobe level will suppress the working efficiency of the antenna and reduce the communication quality. Therefore, it is very significant to research a high-gain millimeter wave antenna array having a low side lobe level.
Therefore, how to design the high-performance antenna becomes a new focus. Although different methods can be adopted to realize the high-gain millimeter wave antenna, the loss caused by a complex transmission line is reduced, and the low side lobe characteristic is realized, so that strict requirements are provided for the antenna design. Especially, to ensure the compactness of the structure and to achieve the low mutual coupling characteristic between the units, the difficult problem to be solved by the antenna engineers is urgently needed.
Disclosure of Invention
The purpose of the invention is as follows: a millimeter wave array antenna with high gain and low sidelobe level characteristics is provided to solve the problems of the prior art.
The technical scheme is as follows: a millimeter wave array antenna with high gain and low sidelobe level characteristics comprises an upper dielectric plate, a lower dielectric plate, a GCPW feed structure, a one-to-four power divider and a quaternary SIW-based resonant cavity TE440A slot leaky-wave antenna array of the mode;
the upper surface and the lower surface along the length direction of the lower dielectric plate are respectively covered with a lower metal surface and a metal ground, and four groups of coupling gap pairs which are periodically arranged and a GCPW feed structure are etched on the lower metal surface; the one-to-four power divider is symmetrically arranged on the lower dielectric plate, and a group of metalized through holes are uniformly etched along the periphery of the upper dielectric plate; quaternary SIW-based resonant cavity TE440The slot leaky-wave antenna array of the die is positioned on an upper dielectric plate, the upper dielectric plate is etched with four groups of metalized through hole arrays which are periodically arranged, the upper surface of the upper dielectric plate covers an upper metal surface, and the upper metal surface is etched with four groups of 4 multiplied by 4 element slot arrays;
a groove is etched in the center of the lower side of the upper dielectric plate and used for placing an End Launch connector to realize GCPW side feed;
the upper and lower dielectric plates are placed in alignment, and a group of circular air-gasification through holes are correspondingly etched on the periphery of the upper and lower dielectric plates and used for fixing and stacking plastic screws.
Preferably, the upper and lower dielectric slabs of the invention are the same dielectric substrate, the relative dielectric constant is 2.2, the loss tangent is 0.0009, the length is 112.1mm, the width is 63.4mm, and the thickness of the upper and lower dielectric slabs is 1mm and 0.5mm respectively. The size of the etching groove at the center of the lower side of the upper dielectric plate is 20mm multiplied by 6 mm.
Preferably, the one-to-four power divider of the invention is composed of a group of metalized through holes uniformly etched along the dielectric plate, and the metalized through holes are symmetrically arranged on the lower dielectric plate, and the radius of the metalized through holes is 0.15 mm.
It is preferable thatThe quaternary SIW-based resonant cavity TE of the invention440The slot leaky-wave antenna array of the die is positioned on an upper dielectric plate, four groups of metalized through hole arrays which are periodically arranged are etched on the upper dielectric plate, and the radius of each metalized through hole is 0.15 mm.
Preferably, the metal ground of the present invention has a length of 112.1mm and a width of 63.4 mm.
Preferably, the lower metal surface of the invention is etched with four groups of coupling slot pairs which are periodically arranged, the coupling slot is 4.6mm long and 0.7mm wide, the distance between each group of slot pairs is 20.7mm, and the distance between the slot pairs is 10 mm.
Preferably, the upper metal surface of the invention is etched with four groups of 4 × 4 element slot arrays, the slot length is 4.2mm, the width is 0.9mm, and the distance of each group of slot arrays is 20.7 mm.
Preferably, a group of circular air gasification through holes are correspondingly etched around the upper dielectric plate and the lower dielectric plate, the radius of each air gasification through hole is 1mm, and the number of the air gasification through holes is 11.
Has the advantages that: the invention designs and realizes the high-gain low-sidelobe millimeter wave array antenna with the double-layer dielectric plate, has the advantages of simple structure, easy processing and realization, low profile and easy integration with a planar circuit, and has potential application value in systems such as 5G mobile communication, satellite communication, millimeter wave communication and the like. The invention adopts a TE resonant cavity based on a SIW440The slot leaky-wave antenna of the mode has the characteristic of large electrical size, and the number of radiating elements is greatly reduced while high gain performance is realized, so that the purposes of simplifying a feed network and reducing feed loss are realized. The one-to-four in-phase unequal-amplitude power divider of the lower dielectric plate can improve the radiation characteristic of the antenna and greatly reduce the side lobe level of the antenna, thereby realizing low side lobe and high gain radiation performance; quaternary SIW-based resonant cavity TE440The slot leaky-wave antenna array of the mode can realize better cross polarization characteristic.
Drawings
Fig. 1 is a three-dimensional overall structural view of the present invention.
Fig. 2 is a top view of fig. 1 assembled.
Fig. 3 is an assembled side view of fig. 1.
FIG. 4 is a graph of the reflection coefficient of the present invention.
Fig. 5 is a main polarization pattern of the present invention.
Fig. 6 is a cross-polarization pattern of the present invention.
Wherein: 1. the device comprises a metal ground, 2 parts of a lower dielectric plate, 3 parts of a lower metal surface, 4 parts of an upper dielectric plate, 5 parts of an upper metal surface, 6 parts of a one-to-four power divider, 7 parts of a GCPW feed structure, 8 parts of four groups of periodically arranged coupling gap pairs, 9 parts of four groups of periodically arranged metalized through hole arrays, 10 parts of four groups of periodically arranged 4 x 4 element gap arrays and 11 parts of an upper dielectric plate and a lower dielectric plate, wherein a group of circular air-gasified through holes are correspondingly etched.
Detailed Description
As shown in fig. 1, fig. 2 and fig. 3, a millimeter wave array antenna based on high-gain low-sidelobe level characteristics comprises upper and lower dielectric plates, a GCPW feeding structure, a one-to-four power divider and a quaternary SIW-based resonant cavity TE440A slot leaky-wave antenna array of a mode.
The invention has a compact structure, which is composed of an upper layer of dielectric slab and a lower layer of dielectric slab, wherein the upper surface and the lower surface of the lower layer of dielectric slab 2 are respectively covered with a lower metal surface 3 and a metal ground 1, the lower metal surface 3 is etched with four groups of coupling gap pairs 8 which are periodically arranged and a GCPW feed structure 7, the one-to-four power divider 6 is symmetrically arranged on the lower layer of dielectric slab 2, and a group of metallized through holes 11 are evenly etched along the dielectric slab; the quaternary SIW-based resonant cavity TE440The slot leaky-wave antenna array of the die is positioned on an upper dielectric plate 4, four groups of metalized through hole arrays 9 which are periodically arranged are etched on the upper dielectric plate 4, an upper metal surface 5 covers the upper surface of the upper dielectric plate 4, and four groups of 4 multiplied by 4 element slot arrays 10 are etched on the upper metal surface 5.
A groove is etched in the center of the lower side of the upper dielectric plate 4, so that an End Launch connector is placed in the position conveniently at the later stage, the GCPW side feeding can be realized, and the effective excitation of the planar antenna is completed;
the upper and lower dielectric plates are placed in alignment, a group of circular air-gasification through holes 11 are correspondingly etched on the periphery, and the upper and lower dielectric plates can be fixedly stacked by plastic screws in the later period.
In a further embodiment, the upper and lower dielectric slabs are the same dielectric substrate, the relative dielectric constant is 2.2, the loss tangent is 0.0009, the lengths are 112.1mm, the widths are 63.4mm, and the thicknesses of the upper and lower dielectric slabs are 1mm and 0.5mm respectively. As shown in fig. 2, the size of the etched groove at the center of the lower side of the upper dielectric plate is 20mm × 6 mm.
In a further embodiment, the one-to-four power divider 6 is composed of a group of metalized through holes uniformly etched along the dielectric plate, and symmetrically arranged on the lower dielectric plate 2, and the radius of the metalized through holes is 0.15 mm.
In a further embodiment, the quaternary SIW-based resonant cavity TE440The slot leaky-wave antenna array of the die is positioned on an upper dielectric plate 4, four groups of metalized through hole arrays which are periodically arranged are etched on the upper dielectric plate 4, and the radius of each metalized through hole 9 is 0.15 mm.
In a further embodiment, the metal ground 1 of the lower dielectric plate 2 has a length of 112.1mm and a width of 63.4 mm.
In a further embodiment, the lower metal surface 3 of the lower dielectric plate 2 is etched with four groups of coupling slot pairs which are periodically arranged, the coupling slot pairs are 4.6mm long and 0.7mm wide, the distance between each group of slot pairs is 20.7mm, and the distance between the slot pairs is 10 mm.
In a further embodiment, the upper metal surface 5 of the upper dielectric plate 4 is etched with four groups of 4 × 4 element slot arrays, the slot length is 4.2mm, the width is 0.9mm, and the distance between each group of slot arrays is 20.7 mm.
In a further embodiment, a group of circular air gasification through holes are correspondingly etched around the upper dielectric plate and the lower dielectric plate, the radius of each air gasification through hole is 1mm, and the number of the air gasification through holes is 11.
In a further embodiment, the antenna of the invention is operated with the structure excited in a side-fed manner with coplanar waveguides GCPW.
Energy is input by a coaxial probe of a 50 omega End Launch connector, an inner core layer of the coaxial probe is connected with a GCPW feed structure etched on a lower metal surface 3 of the lower dielectric plate 2, and the lower metal surface 3 of the lower dielectric plate 2 is connected with an outer core layer of the coaxial probe.Energy is transmitted to the radiation unit along the one-to-four power divider 6 through the GCPW-SIW transition structure, and the radiation unit is the quaternary SIW-based resonant cavity TE440The slot leaky-wave antenna array of the mould consists of a metalized through hole array 9 which is etched on an upper layer dielectric plate and is periodically arranged and a 4 multiplied by 4 element slot array which is etched on an upper metal surface of the upper layer dielectric plate. A one-to-four power divider 6 positioned on the lower dielectric plate transmits energy to the quaternary SIW-based resonant cavity TE through the gap coupling of four groups of coupling gap pairs 8 which are periodically arranged and etched on the lower metal surface 3 of the lower dielectric plate 2440In a slot leaky-wave antenna array of modes.
As shown in FIG. 1, the SIW-based resonant cavity TE440The slot leaky-wave antenna of the mode has the characteristic of large electrical size, and the number of radiating elements is greatly reduced while high gain performance is realized, so that the purposes of simplifying a feed network and reducing feed loss are realized.
On the one hand, as shown in fig. 4, the reflection coefficient (S11) of the array antenna is less than-10 dB in the frequency band range of 26.7GHz to 27.8GHz, which indicates that the well-matched operating frequency band of the array antenna covers the frequency band range of 26.7GHz to 27.8 GHz.
On the other hand, as shown in fig. 5 and fig. 6, the one-to-four in-phase unequal-amplitude power divider of the lower dielectric plate can improve the radiation characteristics of the antenna and greatly reduce the side lobe level of the antenna, thereby realizing low side lobe and high gain radiation performance; the quaternary SIW-based resonant cavity TE440The slot leaky-wave antenna array of the mode can realize better cross polarization characteristic. Fig. 5 and 6 are two-dimensional far-field radiation patterns of the array antenna in the Phi =0 ° plane and the Phi =90 ° plane, respectively (the solid line is the main polarization pattern curve, and the dashed line represents the cross polarization pattern curve). It can be seen that the maximum gain of the antenna reaches 21.5dBi, the sidelobe level of the antenna in the Phi =0 ° plane is-19 dB, and the cross polarization reaches 37.8 dB; and the sidelobe level of the antenna in a Phi = 90-degree plane is-20.8 dB, and the cross polarization reaches 37.8 dB.
In summary, the present invention has the following advantages: the effective excitation of the planar antenna is realized through the 50 omega End Launch connector, so that the array antenna has a simple and convenient feed mode and is processedThe fixing and the testing are very convenient; the GCPW-SIW transition structure can realize good impedance matching and has low loss characteristic in millimeter wave band compared with a microstrip transmission line; the one-to-four in-phase unequal-amplitude power divider can improve the radiation characteristic of an antenna and realize ultralow sidelobe level; TE resonant cavity based on SIW440The leaky-wave structure of the mode can realize better antenna gain, low side lobe and low cross polarization characteristics. The invention designs and realizes the high-gain low-sidelobe millimeter wave array antenna with the double-layer dielectric plate, has the advantages of simple structure, easy processing and realization, low profile and easy integration with a planar circuit, and has potential application value in systems such as 5G mobile communication, satellite communication, millimeter wave communication and the like.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition.

Claims (8)

1. A millimeter wave array antenna having high-gain low-sidelobe level characteristics, characterized in that: comprises an upper dielectric plate, a lower dielectric plate, a GCPW feed structure, a one-to-four power divider and a quaternary SIW-based resonant cavity TE440A slot leaky-wave antenna array of the mode;
the upper surface and the lower surface along the length direction of the lower dielectric plate are respectively covered with a lower metal surface and a metal ground, and four groups of coupling gap pairs which are periodically arranged and a GCPW feed structure are etched on the lower metal surface; the one-to-four power divider is symmetrically arranged on the lower dielectric plate, and a group of metalized through holes are uniformly etched along the periphery of the upper dielectric plate; quaternary SIW-based resonant cavity TE440The slot leaky-wave antenna array of the die is positioned on an upper dielectric plate, the upper dielectric plate is etched with four groups of metalized through hole arrays which are periodically arranged, the upper surface of the upper dielectric plate covers an upper metal surface, and the upper metal surface is etched with four groups of 4 multiplied by 4 element slot arrays;
a groove is etched in the center of the lower side of the upper dielectric plate and used for placing an End Launch connector to realize GCPW side feed;
the upper and lower dielectric plates are placed in alignment, and a group of circular air-gasification through holes are correspondingly etched on the periphery of the upper and lower dielectric plates and used for fixing and stacking plastic screws.
2. The millimeter wave array antenna with high gain and low sidelobe level characteristics according to claim 1, wherein the upper and lower dielectric plates are the same dielectric substrate, the relative dielectric constant is 2.2, the loss tangent is 0.0009, the lengths are both 112.1mm, the widths are both 63.4mm, and the thicknesses of the upper and lower dielectric plates are 1mm and 0.5mm, respectively; the size of the etching groove at the center of the lower side of the upper dielectric plate is 20mm multiplied by 6 mm.
3. The millimeter wave array antenna with high gain and low sidelobe level characteristics according to claim 1, wherein the one-to-four power divider is composed of a set of metalized through holes uniformly etched along the dielectric plate, and symmetrically disposed on the lower dielectric plate, and the radius of the metalized through holes is 0.15 mm.
4. A mmwave array antenna with high gain and low sidelobe level characteristics as claimed in claim 1, wherein the quaternary SIW-based resonator TE is characterized440The slot leaky-wave antenna array of the die is positioned on an upper dielectric plate, four groups of metalized through hole arrays which are periodically arranged are etched on the upper dielectric plate, and the radius of each metalized through hole is 0.15 mm.
5. A millimeter wave array antenna having high gain and low sidelobe level characteristics according to claim 1, wherein said metal ground has a length of 112.1mm and a width of 63.4 mm.
6. The millimeter wave array antenna with high gain and low sidelobe level characteristics according to claim 1, wherein the lower metal plane is etched with four sets of coupling slot pairs arranged periodically, the coupling slot pair has a length of 4.6mm and a width of 0.7mm, the distance between each set of slot pairs is 20.7mm, and the distance between the slot pairs is 10 mm.
7. The millimeter wave array antenna with high gain and low sidelobe level characteristics according to claim 1, wherein the upper metal plane is etched with four sets of 4 x 4 element slot arrays, the slot length is 4.2mm, the slot width is 0.9mm, and the slot array distance of each set is 20.7 mm.
8. The millimeter wave array antenna with high gain and low sidelobe level characteristics according to claim 1, wherein a group of circular air-immersed through holes are correspondingly etched around the upper and lower dielectric plates, the radius of the air-immersed through holes is 1mm, and the number of the air-immersed through holes is 11.
CN202111571830.6A 2021-12-21 2021-12-21 Millimeter wave array antenna with high-gain low-sidelobe level characteristics Pending CN114204285A (en)

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CN202111571830.6A CN114204285A (en) 2021-12-21 2021-12-21 Millimeter wave array antenna with high-gain low-sidelobe level characteristics

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116231338A (en) * 2022-12-28 2023-06-06 电子科技大学 Low sidelobe millimeter wave gap waveguide slot array antenna

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116231338A (en) * 2022-12-28 2023-06-06 电子科技大学 Low sidelobe millimeter wave gap waveguide slot array antenna
CN116231338B (en) * 2022-12-28 2023-10-13 电子科技大学 Low sidelobe millimeter wave gap waveguide slot array antenna

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