CN114203678B - Integrated packaging structure and manufacturing method thereof - Google Patents
Integrated packaging structure and manufacturing method thereof Download PDFInfo
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- CN114203678B CN114203678B CN202210148414.3A CN202210148414A CN114203678B CN 114203678 B CN114203678 B CN 114203678B CN 202210148414 A CN202210148414 A CN 202210148414A CN 114203678 B CN114203678 B CN 114203678B
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- metal
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- polymer layer
- fuse
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
Abstract
The invention provides an integrated packaging structure and a manufacturing method thereof. The metal fuse is sealed by the sealing layer below the polymer layer, and the sealing layer is provided with a metal bridge. A plurality of through heat conduction through holes are formed in the polymer layer and the sealing layer, and the heat conduction through holes are directly connected with the metal bridges and the wiring layer in a thermal mode so as to dissipate heat quickly; in addition, the invention provides a method for forming the metal fuse wire by utilizing the overhead metal bridge, which has simple process and can improve the processing efficiency.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit packaging test, in particular to an integrated packaging structure and a manufacturing method thereof.
Background
The chip overvoltage protection is usually realized by connecting an electric fuse in series, when a large current is input, the electric fuse can be fused, so that the normal operation of the chip is protected, and the electric fuse is usually used as a programmable fuse structure. However, the conventional die is inconvenient to integrate the electrical fuse, and the integration of the electrical fuse in the subsequent process increases the area of the wiring, and the formation method of the electrical fuse is complicated, which is not favorable for reducing the cost.
Disclosure of Invention
Based on solving the above problems, the present invention provides a method for manufacturing an integrated package structure, comprising the steps of:
(1) fixing a chip on a carrier and forming a polymer layer sealing the chip on the carrier;
(2) forming a sacrificial layer on a first side of the polymer layer, wherein the first side is far away from the carrier, and forming a plurality of heat conduction through holes positioned on two opposite sides of the chip, and the plurality of heat conduction through holes penetrate through the polymer layer and the sacrificial layer;
(3) forming a first metal layer on the sacrificial layer and patterning the first metal layer to form a metal bridge located above the chip;
(4) etching away the sacrificial layer such that the metal bridge is supported only by the plurality of thermally conductive vias to form an overhead structure;
(5) and selectively depositing a metal fuse on the polymer layer, wherein the middle part of the metal fuse penetrates through the bottom of the metal bridge, and the thickness of the middle part of the metal fuse is smaller than that of the electric connection parts at two ends of the metal fuse.
Further, the method also comprises a step (6) of filling a resin material between the first metal layer and the polymer layer to form a sealing layer.
Further, the method comprises the step (7) of removing the carrier and forming a conductive through hole penetrating through the polymer layer, wherein one end of the conductive through hole is exposed from a second side, opposite to the first side, of the polymer layer, and the other end of the conductive through hole is directly and physically and electrically connected with the electric connection part.
Further, the method also comprises a step (8) of forming a wiring layer on the second side of the polymer layer, wherein the wiring layer electrically connects the chip and the metal fuse through the conductive through hole, and a plurality of leading-out terminals are jointed on the wiring layer.
Further, in step (5), selectively depositing the metal fuse specifically includes: and carrying out chemical vapor deposition, physical vapor deposition or magnetron sputtering on the metal fuse by using a mask, wherein the thickness of the middle part of the metal fuse at the bottom of the metal bridge is smaller due to the existence of the metal bridge, and the thickness of the electric connection part at two sides of the metal bridge is larger.
Further, the metal bridge is arranged perpendicular to the metal fuse.
Furthermore, one surface of the first metal layer is exposed out of the integrated package structure.
Furthermore, the metal fuse is made of copper or aluminum.
The invention also provides an integrated packaging structure, which is formed by the manufacturing method of the integrated packaging structure.
The invention additionally provides an integrated packaging structure, which is formed by the manufacturing method of the integrated packaging structure.
The invention has the following advantages: the heat inside the package body can be transferred to the outermost metal layer by utilizing the heat conduction through holes so as to quickly dissipate heat; in addition, the invention provides a method for forming the metal fuse wire by utilizing the overhead metal bridge, which has simple process and can improve the processing efficiency. In addition, the electrical connection reliability can be ensured by the electrical connection parts at the two ends of the metal fuse, and the metal fuse has the same width.
Drawings
FIG. 1 is a cross-sectional view of a carrier with a chip, a polymer layer, and a sacrificial layer disposed thereon;
FIG. 2 is a cross-sectional view of a metal layer formed on the substrate of FIG. 1;
FIG. 3 is a cross-sectional view of the metal layer of FIG. 2 patterned to form a metal bridge;
FIG. 4 is a schematic diagram of the sacrificial layer of FIG. 3 after being removed;
FIG. 5 is a top view of a metal fuse being formed;
FIG. 6 is a cross-sectional view taken along line A1A2 of FIG. 5;
FIG. 7 is a cross-sectional view taken along line B1B2 of FIG. 5;
FIG. 8 is a cross-sectional view of a sealing layer formed on the substrate of FIG. 7;
FIG. 9 is a top view of FIG. 8;
fig. 10 is a cross-sectional view of a wiring layer and solder balls formed on the basis of fig. 8.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
The manufacturing method of the integrated packaging structure specifically comprises the following steps:
(1) a chip is fixed on a carrier, and a polymer layer sealing the chip is formed on the carrier.
(2) And forming a sacrificial layer on a first side of the polymer layer, wherein the first side is far away from the carrier, and forming a plurality of heat conduction through holes positioned on two opposite sides of the chip, and the plurality of heat conduction through holes penetrate through the polymer layer and the sacrificial layer.
(3) And forming a first metal layer on the sacrificial layer and patterning to form a metal bridge positioned above the chip.
(4) Etching away the sacrificial layer such that the metal bridge is supported only by the plurality of thermally conductive vias to form an overhead structure.
(5) And selectively depositing a metal fuse on the polymer layer, wherein the middle part of the metal fuse penetrates through the bottom of the metal bridge, and the thickness of the middle part of the metal fuse is smaller than that of the electric connection parts at two ends of the metal fuse.
(6) And filling a resin material between the first metal layer and the polymer layer to form a sealing layer.
(7) Removing the carrier and forming a conductive via through the polymer layer, one end of the conductive via being exposed from a second side of the polymer layer opposite to the first side, the other end of the conductive via being in direct physical and electrical connection with the electrical connection portion.
(8) And forming a wiring layer on the second side of the polymer layer, wherein the wiring layer electrically connects the chip and the metal fuse through the conductive through hole, and a plurality of leading-out terminals are jointed on the wiring layer.
Examples of the present invention will be described in detail below with reference to the accompanying drawings. Referring first to fig. 1, there is included providing a rigid carrier 10, which carrier 10 may be a ceramic, glass, silicon substrate, or the like. A release layer (not shown) may also be provided on the carrier 10 to facilitate removal of the carrier 10 in a subsequent step.
Then a chip 11 to be packaged is provided, the chip 11 comprising an active side and a passive side arranged opposite to each other, and the chip 11 is fixed on the carrier 10, wherein the active side of the chip 11 faces towards the carrier 10. The chip 11 may be a power chip, a logic chip or an arithmetic chip. A polymer layer 12 is then injection molded, stamped or die cast on the carrier 10, the polymer layer 12 completely encapsulating the chip 11, and the polymer layer 12 having a flat upper surface. The polymer layer 12 may be epoxy resin, polyimide, silicone resin, or the like, and preferably, may be selected to be a photocurable resin material.
Further, a sacrificial layer 13 is formed on a first side of the polymer layer 12, said first side being remote from said carrier 10, which sacrificial layer 13 may comprise a carbon-based material, which may be, for example, a spin-on hard mask (SOH) layer or an Amorphous Carbon Layer (ACL). The thickness of the sacrificial layer 13 may be 100-500 μm, which may be processed in a subsequent step using a wet etching process.
Next, a plurality of thermal vias 14 are formed in the sacrificial layer 13 and the polymer layer 12, the thermal vias 14 are formed of a metal material with good thermal conductivity, such as copper or a copper alloy, and the thermal vias 14 are used for improving heat dissipation. The heat conducting through holes 14 may be disposed at two opposite sides of the chip 11, which are symmetrically disposed, and at least two heat conducting through holes 14 are disposed at each side. The thermal vias 14 penetrate the sacrificial layer 13 and the polymer layer 12, and the tops of the thermal vias 14 are flush with the upper surface of the sacrificial layer.
Referring to fig. 2, a metal layer 15 is deposited on the sacrificial layer 13, and the metal layer 15 is formed by a chemical vapor deposition method or a physical vapor deposition method, and the material is selected from copper, aluminum or an alloy thereof with good heat dissipation. Wherein the metal layer 15 is in direct contact with the plurality of thermally conductive vias 14.
Referring to fig. 3, patterning is performed: a portion of the metal layer 15 is removed by a wet etching process or the like to form a metal bridge over the chip 11, which includes a bridge portion 16 spanning the chip 11 and bridge abutment portions 17 at both ends of the bridge portion 16, as can be seen in fig. 5. Wherein the width of bridge 16 is less than the thickness of two bridge pier portions 17, and a plurality of heat conduction through holes 14 are located under two bridge pier portions 17.
Then, referring to fig. 4, the sacrificial layer 13 is removed using an etching process to form an overhead layer 18 between the metal bridges and the polymer layer 12 such that the metal bridges are supported only by the plurality of thermally conductive vias 14 to form an overhead structure.
Further, a metal fuse 19 is selectively deposited on the polymer layer 12 by chemical vapor deposition, physical vapor deposition or magnetron sputtering using a mask, wherein the shape and position of the mask are the same as those of the metal fuse 19 shown in fig. 5. Due to the presence of the metal bridge, the deposition rate is lower at the bottom of the metal bridge than at other locations, so that the thickness of the middle portion 21 at the bottom of the metal bridge is smaller, while the thickness of the electrical connection portions 20 on both sides of the metal bridge is larger. Referring to fig. 5-7, the intermediate portion 21 passes through the bottom of the bridge portion 16 of the metal bridge, and the two electrical connection portions 20 are located on both sides of the bridge portion 16.
A sealing layer 22 is formed by filling a resin material, see fig. 8 in particular, between the metal layer 15 and the polymer layer 12, wherein the resin material may be the same as the polymer material, for example, an epoxy resin material or the like. The sealing layer 22 is used for sealing the metal fuse 19, and the sealing layer 22 also wraps around the thermal via 14.
Finally, referring to fig. 9 and 10, the carrier 10 is removed, the package body is turned over, and two conductive vias 23 penetrating the polymer layer 12 are formed, one ends of the two conductive vias 23 are exposed from a second side of the polymer layer 12 opposite to the first side, and the other ends of the two conductive vias 23 are electrically connected to the electrical connection portions 20 at both ends of the metal fuse 19, respectively. Next, a wiring layer 24 is formed on the other side of the polymer layer 12, and the wiring layer 24 includes at least one wiring layer and at least one dielectric layer, and the specific formation method thereof may use an existing method. The wiring layer 24 and the conductive through holes 23 electrically connect the chip 11 with the plurality of conductive through holes 23. Furthermore, a plurality of solder balls 25 are formed on the wiring layer 24 as leading-out terminals, and the plurality of solder balls 25 are formed by a conventional ball mounting process.
Finally, an integrated package structure as shown in fig. 10 is formed, which includes a wiring layer 24, a plurality of solder balls 25 on the wiring layer 24, and the chip 11 and the metal fuse 19 electrically connected through the wiring layer 24. There is a chip 11 encapsulated by a polymer layer 12 under the wiring layer 24, and a metal fuse 19 is formed under the polymer layer 12. The metal fuse 19 is sealed by a sealing layer 22 under the polymer layer 12, and a metal bridge is provided on the sealing layer 22, and the metal bridge and the metal fuse 19 are vertically staggered and spaced apart from each other in an insulated manner when viewed from below. There are two conductive vias 23 in the polymer layer 12, the conductive vias 23 electrically connecting the metal fuse 19 and the wiring layer 24. Furthermore, there are a plurality of thermally conductive vias 14 through the polymer layer 12 and the sealing layer 22, the thermally conductive vias 14 thermally connecting the metal bridges and the wiring layer 24 directly.
The invention can transfer the heat in the packaging body to the outermost metal layer by utilizing the heat conduction through hole so as to quickly dissipate the heat; in addition, the invention provides a method for forming the metal fuse wire by utilizing the overhead metal bridge, which has simple process and can improve the processing efficiency. In addition, the electrical connection reliability can be ensured by the electrical connection parts at the two ends of the metal fuse, and the metal fuse has the same width.
The expressions "exemplary embodiment," "example," etc., as used herein do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.
The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.
While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.
Claims (9)
1. A manufacturing method of an integrated packaging structure is characterized by comprising the following steps:
(1) fixing a chip on a carrier and forming a polymer layer sealing the chip on the carrier;
(2) forming a sacrificial layer on a first side of the polymer layer, wherein the first side is far away from the carrier, and forming a plurality of heat conduction through holes positioned on two opposite sides of the chip, and the plurality of heat conduction through holes penetrate through the polymer layer and the sacrificial layer;
(3) forming a first metal layer on the sacrificial layer and patterning the first metal layer to form a metal bridge located above the chip;
(4) etching away the sacrificial layer such that the metal bridge is supported only by the plurality of thermally conductive vias to form an overhead structure;
(5) and selectively depositing a metal fuse on the polymer layer, wherein the middle part of the metal fuse penetrates through the bottom of the metal bridge, and the thickness of the middle part of the metal fuse is smaller than that of the electric connection part at two ends of the metal fuse.
2. The method of manufacturing an integrated package structure of claim 1, wherein: and a step (6) of filling a resin material between the first metal layer and the polymer layer to form a sealing layer.
3. The method of manufacturing an integrated package structure of claim 2, wherein: and a step (7) of removing the carrier and forming a conductive via penetrating the polymer layer, one end of the conductive via being exposed from a second side of the polymer layer opposite to the first side, and the other end of the conductive via being in direct physical and electrical connection with the electrical connection portion.
4. The method of manufacturing an integrated package structure of claim 3, wherein: and a step (8) of forming a wiring layer on the second side of the polymer layer, the wiring layer electrically connecting the chip and the metal fuse through the conductive via, and bonding a plurality of lead-out terminals on the wiring layer.
5. The method of manufacturing an integrated package structure of claim 1, wherein: in the step (5), selectively depositing the metal fuse specifically includes: and carrying out chemical vapor deposition, physical vapor deposition or magnetron sputtering on the metal fuse by using a mask, wherein the thickness of the middle part of the metal fuse at the bottom of the metal bridge is smaller due to the existence of the metal bridge, and the thickness of the electric connection part at two sides of the metal bridge is larger.
6. The method of manufacturing an integrated package structure of claim 5, wherein: the metal bridge is arranged perpendicular to the metal fuse.
7. The method of manufacturing an integrated package structure of claim 2, wherein: one surface of the first metal layer is exposed out of the integrated packaging structure.
8. The method of manufacturing an integrated package structure of claim 1, wherein: the metal fuse is made of copper or aluminum.
9. An integrated package structure formed by the method of manufacturing an integrated package structure of any of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210148414.3A CN114203678B (en) | 2022-02-18 | 2022-02-18 | Integrated packaging structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210148414.3A CN114203678B (en) | 2022-02-18 | 2022-02-18 | Integrated packaging structure and manufacturing method thereof |
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| CN114203678A CN114203678A (en) | 2022-03-18 |
| CN114203678B true CN114203678B (en) | 2022-05-06 |
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Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7566593B2 (en) * | 2006-10-03 | 2009-07-28 | International Business Machines Corporation | Fuse structure including cavity and methods for fabrication thereof |
| TWI385695B (en) * | 2009-09-04 | 2013-02-11 | Cyntec Co Ltd | Protective device and manufacturing method thereof |
| US8779592B2 (en) * | 2012-05-01 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via-free interconnect structure with self-aligned metal line interconnections |
| KR101976039B1 (en) * | 2012-12-04 | 2019-08-28 | 삼성전자 주식회사 | Semiconductor device |
| JP2015041546A (en) * | 2013-08-22 | 2015-03-02 | デクセリアルズ株式会社 | Protection element |
| JP6483987B2 (en) * | 2014-09-26 | 2019-03-13 | デクセリアルズ株式会社 | Fuse element, fuse element, and heating element built-in fuse element |
| JP6595873B2 (en) * | 2015-03-06 | 2019-10-23 | エイブリック株式会社 | Semiconductor integrated circuit device and manufacturing method thereof |
| JP6707428B2 (en) * | 2016-09-16 | 2020-06-10 | デクセリアルズ株式会社 | Fuse element, fuse element, protection element |
| KR102203721B1 (en) * | 2019-06-20 | 2021-01-18 | 한국생산기술연구원 | Chip fuse with insulation pattern for improving melting response of melting portion and charging apparatus with said Chip fuse |
| CN112820654B (en) * | 2021-01-05 | 2022-06-10 | 山东睿芯半导体科技有限公司 | Intelligent power chip structure and manufacturing method thereof |
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Denomination of invention: An integrated packaging structure and its manufacturing method Effective date of registration: 20230301 Granted publication date: 20220506 Pledgee: Weihai City Commercial Bank Limited by Share Ltd. Xinghai branch Pledgor: WEIHAI JIARUI OPTOELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2023980033719 |