CN114190613A - MEMS silicon-based atomizing core with micro-channel structure and manufacturing method thereof - Google Patents
MEMS silicon-based atomizing core with micro-channel structure and manufacturing method thereof Download PDFInfo
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- CN114190613A CN114190613A CN202210020887.5A CN202210020887A CN114190613A CN 114190613 A CN114190613 A CN 114190613A CN 202210020887 A CN202210020887 A CN 202210020887A CN 114190613 A CN114190613 A CN 114190613A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010703 silicon Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 238000000889 atomisation Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 238000001312 dry etching Methods 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 16
- 238000009826 distribution Methods 0.000 abstract description 5
- 239000011162 core material Substances 0.000 description 51
- 239000000243 solution Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 8
- 229920000742 Cotton Polymers 0.000 description 5
- 239000000443 aerosol Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 3
- 239000000306 component Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 231100000206 health hazard Toxicity 0.000 description 1
- 238000009688 liquid atomisation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/70—Manufacture
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/10—Devices using liquid inhalable precursors
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
- A24F40/42—Cartridges or containers for inhalable precursors
-
- A—HUMAN NECESSITIES
- A24—TOBACCO; CIGARS; CIGARETTES; SIMULATED SMOKING DEVICES; SMOKERS' REQUISITES
- A24F—SMOKERS' REQUISITES; MATCH BOXES; SIMULATED SMOKING DEVICES
- A24F40/00—Electrically operated smoking devices; Component parts thereof; Manufacture thereof; Maintenance or testing thereof; Charging means specially adapted therefor
- A24F40/40—Constructional details, e.g. connection of cartridges and battery parts
- A24F40/46—Shape or structure of electric heating means
Abstract
The invention discloses an MEMS silicon-based atomizing core with a micro-channel structure, which comprises: the silicon substrate and the heater strip are arranged on the silicon substrate, the atomizing microchannels which are arranged in an array mode are arranged on the silicon substrate, first oxide layers which are symmetrically arranged are arranged on one opposite side surfaces of the silicon substrate, second oxide layers are arranged on the side walls of the atomizing microchannels, the heater strip is manufactured on the surfaces of the first oxide layers, and contact electrodes are arranged at the end portions of the heater strip. The invention also discloses a manufacturing method of the MEMS silicon-based atomizing core distributed with the micro-channel structure. Compared with the existing silicon-based atomizing core technology, the invention reduces the longitudinal heat conduction capability of the silicon-based atomizing core and improves the surface heat efficiency; compared with the existing ceramic atomization core technology, the atomization core has good surface thermal conductivity and uniform and adjustable heat distribution, and effectively avoids the phenomenon of core pasting during heating.
Description
Technical Field
The invention belongs to the field of heating atomization cores, and particularly relates to an MEMS silicon-based atomization core with a micro-channel structure and a manufacturing method thereof.
Background
The heating atomization core is used as a core component of a liquid atomization product, liquid is heated to be changed into a foggy aerosol form to be emitted, and when the atomization element heats the atomized liquid, the generation of harmful substances is rapidly, uniformly, consistently and finely reduced as much as possible.
The existing liquid heating atomization cores mainly have the following two types: a cotton-coated atomizing core and a porous ceramic atomizing core. The metal heating wire in the cotton-coated atomizing core is in direct contact with the cotton core, and at high temperature, metal components in the heating wire and scraps of the cotton core material can be carried by aerosol formed by atomization and inhaled by a user, so that potential health hazards are caused. Meanwhile, the cotton core is in non-uniform contact with the metal heating wire, heating is not uniform, and high-temperature carbonization can also cause resistance change of the heating wire, so that temperature change of the heating wire is caused, and atomization uniformity, stability and consistency are poor. The porous ceramic atomizing core consists of two parts, namely porous ceramic and a heating electrode. Porous ceramic is made into a bowl-shaped structure through high-temperature sintering, the heating film is designed into a specific shape and is attached to the surface of the ceramic, and in the working process, the heating film uniformly heats liquid to form mist which is emitted by ceramic micropores. Due to the existence of the micron-sized honeycomb holes, the atomized aerosol is finer and smoother. And through adjusting micropore size, porosity, can control the lock liquid of ceramic core, stock solution ability, can also adjust the humidity of atomizing aerosol.
The existing ceramic atomization core is prepared by adopting a porous ceramic sintering technology, so that the atomization core has the following problems:
although the atomizing core has certain liquid absorption and storage capacities, the atomizing core has poor heat conductivity and uneven heat distribution and has the phenomenon of core pasting;
secondly, the ceramic atomizing core is porous and soft in texture, so that the metal heating wire is difficult to process on the ceramic core, and a metal heating electrode must be thickened to ensure that the ceramic atomizing core is contacted with an external electrode column under the condition that the ceramic core is not damaged;
thirdly, the atomization core contains harmful substances through a ceramic sintering process.
Disclosure of Invention
The invention aims to: compared with the existing silicon-based atomizing core technology, the MEMS silicon-based atomizing core with the micro-channel structure and the manufacturing method thereof are provided, the longitudinal heat conduction capability of the silicon-based atomizing core is reduced, and the surface heat efficiency is improved; compared with the existing ceramic atomization core technology, the atomization core has good surface thermal conductivity and uniform and adjustable heat distribution, and effectively avoids the phenomenon of core pasting during heating.
In order to achieve the above object, in one aspect, the present invention provides a MEMS silicon-based atomizing core full of micro channel structures, comprising: the silicon substrate and the heater strip are arranged on the silicon substrate, the atomizing microchannels which are arranged in an array mode are arranged on the silicon substrate, first oxide layers which are symmetrically arranged are arranged on one opposite side surfaces of the silicon substrate, second oxide layers are arranged on the side walls of the atomizing microchannels, the heater strip is manufactured on the surfaces of the first oxide layers, and contact electrodes are arranged at the end portions of the heater strip.
As a further description of the above technical solution:
the first oxide layer is a silicon oxide layer.
As a further description of the above technical solution:
the second oxide layer is a silicon oxide layer.
As a further description of the above technical solution:
the atomized microchannel has a transverse dimension of 2 to 200 microns.
As a further description of the above technical solution:
the thickness of the silicon substrate is 100-1000 microns.
On the other hand, the invention also provides a manufacturing method of the MEMS silicon-based atomization core distributed with the micro-channel structure, which comprises the following steps:
s1, preparing a silicon substrate;
s2, depositing an etching mask on the silicon substrate, and processing the atomized microchannel by using a dry etching process or a wet etching process;
s3, removing the mask on the surface of the silicon substrate by using a dry etching process or a wet etching process;
s4, oxidizing a layer of silicon oxide on the surface of the silicon substrate to form a first oxide layer, and oxidizing a layer of silicon oxide on the inner surface of the atomizing microchannel to form a second oxide layer;
s5, depositing a metal heating wire on the surface of the first oxide layer, and making a specific pattern by a dry etching process or a wet etching process to finish the atomization core processing.
As a further description of the above technical solution:
in step S2, the material of the mask is one of photoresist, silicon oxide or silicon nitride.
As a further description of the above technical solution:
in step S5, the material of the heating wire includes, but is not limited to, one of Al, Ti/Au, Ti/Pt, Ti/TiN/Au, Ti/TiN/Pt, Ta/Au, Ta/Pt, Ta/TaN/Au, Ta/TaN/Pt, etc.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. in the invention, the substrate of the atomizing core is made of silicon material, so that a micro-channel structure is easy to process on the substrate, and the inner surface and the outer surface of the micro-channel are coated with an oxide layer for reducing the longitudinal heat conduction capability of the silicon-based atomizing core, improving the surface heat efficiency and enhancing the atomizing capability.
2. In the invention, the metal heating wire is directly processed on the silicon substrate by adopting a mature semiconductor processing technology, the yield is high, the atomizing core is hard, and the contact with an external electrode column is not damaged. The metal heating wire and the metal electrode are deposited and covered on the surface (oxide layer) of the silicon-based substrate, the atomization micro-channel cannot be covered, the atomization area is increased while the heat distribution uniformity is improved, the heat is uniformly distributed, the micro-channel is uniformly distributed, and the core pasting phenomenon of the atomization core is effectively avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of an MEMS silicon-based atomizing core with a microchannel structure.
Fig. 2 is a schematic diagram of the processing of an atomizing microchannel in the manufacturing method of an MEMS silicon-based atomizing core with a microchannel structure.
Fig. 3 is a schematic diagram of mask removal processing in a method for manufacturing an MEMS silicon-based atomizing core with a microchannel structure.
Fig. 4 is a schematic processing diagram of a first oxide layer and a second oxide layer in a method for manufacturing an MEMS silicon-based atomizing core with a micro-channel structure.
Illustration of the drawings:
1. a silicon substrate; 11. a first oxide layer; 2. heating wires; 21. a contact electrode; 3. an atomizing microchannel; 31. a second oxide layer; 4. and (5) masking.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present invention, it should be noted that the terms "upper", "inner", and the like refer to orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that are conventionally arranged when the products of the present invention are used, and are used only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-4, in one aspect, the present invention provides a MEMS silicon-based atomizing core with a micro-channel structure, comprising: the silicon substrate 1 is provided with atomizing micro-channels 3 which are arranged in an array mode, the opposite side surface of the silicon substrate 1 is provided with first oxidation layers 11 which are symmetrically arranged, the side wall of each atomizing micro-channel 3 is provided with a second oxidation layer 31, the heating wire 2 is manufactured on the surface of each first oxidation layer 11, and the end portion of the heating wire 2 is provided with a contact electrode 21. The first oxide layer 11 is a silicon oxide layer, and the second oxide layer 31 is a silicon oxide layer. The surface of the silicon substrate 1 and the inner and outer surfaces of the micro-channel (atomizing micro-channel 3) are coated with the oxide layer (silicon oxide layer), so that the longitudinal heat conduction capability of the silicon-based atomizing core is effectively reduced, the surface heat efficiency is improved, and the atomizing capability is enhanced.
The atomizing microchannel 3 has a transverse dimension of 2-200 microns and the microchannel orifice may be circular, square or other shape. The thickness of the silicon substrate 1 is 100-1000 μm.
On the other hand, the invention also provides a manufacturing method of the MEMS silicon-based atomization core distributed with the micro-channel structure, which comprises the following steps:
s1, preparing a silicon substrate 1 with the thickness of hundreds of micrometers to 1 millimeter;
s2, depositing an etching mask 4 on a silicon substrate 1, and processing an atomizing microchannel 3 by a dry etching process or a wet etching process, wherein the size of the channel is several micrometers to hundreds of micrometers, the channel interval is several micrometers to tens of micrometers, and the mask material comprises photoresist, silicon oxide and silicon nitride;
s3, removing the mask 4 on the surface of the silicon substrate 1 by using a dry etching process or a wet etching process;
s4, oxidizing a layer of silicon oxide on the surface of the silicon substrate 1 to form a first oxide layer 11, and oxidizing a layer of silicon oxide on the inner surface of the atomizing microchannel 3 to form a second oxide layer 31, wherein the thicknesses of the first oxide layer 11 and the second oxide layer 31 are hundreds of nanometers to two micrometers;
s5, depositing a metal heating wire 2 and a metal electrode (contact electrode 21) on the surface of the first oxidation layer 11, and making a specific pattern by a dry etching process or a wet etching process to finish the atomization core processing.
In step S2, the material of the mask 4 is one of photoresist, silicon oxide or silicon nitride.
In step S5, the material of the heating wire 2 includes, but is not limited to, one of Al, Ti/Au, Ti/Pt, Ti/TiN/Au, Ti/TiN/Pt, Ta/Au, Ta/Pt, Ta/TaN/Au, Ta/TaN/Pt, etc. It is harmless to human body.
The working principle is as follows: the substrate of the atomizing core is made of silicon material, so that the atomizing core is easy to process, and a micro-channel structure is processed on the substrate. The transverse dimension of the micro-channel is several microns to dozens of microns, the channel interval is several microns, and the channel with the size of several microns can improve the liquid locking capacity to liquid. The inner surface and the outer surface of the micro-channel of the atomizing core are coated with the oxide layer, so that the longitudinal heat conduction capability of the silicon-based atomizing core is reduced, the surface heat efficiency is improved, and the atomizing capability is enhanced. The metal heating wires and the metal electrodes are deposited on the surface of the silicon substrate 1 and do not cover the atomizing micro-channel, so that the atomizing area is increased while the heat distribution uniformity is improved. The metal heating wires realize the uniform distribution of heat and are matched with the uniform distribution of the micro-channels, so that the phenomenon that the atomizing core is burnt is effectively avoided. The silicon-based substrate is hard in texture, can bear the direct contact of an external electrode column without being damaged by combining with a metal electrode, and the whole atomizing core material (and the preparation process) is harmless to a human body.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (8)
1. An MEMS silicon-based atomizing core full of micro-channel structures, which is characterized by comprising: silicon substrate (1) and heater strip (2), be provided with atomizing microchannel (3) that the array was arranged on silicon substrate (1), be provided with symmetrical arrangement's first oxide layer (11) on the relative side surface of silicon substrate (1), be provided with second oxide layer (31) on the lateral wall of atomizing microchannel (3), heater strip (2) preparation is in first oxide layer (11) surface, the tip of heater strip (2) is provided with contact electrode (21).
2. The MEMS silicon-based atomizing core distributed with the micro-channel structure is characterized in that the first oxide layer (11) is a silicon oxide layer.
3. The MEMS silicon-based atomizing core distributed with the micro-channel structure is characterized in that the second oxide layer (31) is a silicon oxide layer.
4. A MEMS silicon-based atomizing core with a distributed microchannel structure according to any one of claims 1 to 3, wherein the lateral dimension of the atomizing microchannel (3) is 2 to 200 μm.
5. The MEMS silicon-based atomizing core distributed with the micro-channel structure as set forth in any one of claims 1 to 3, wherein the thickness of the silicon substrate (1) is 100-1000 μm.
6. A manufacturing method of an MEMS silicon-based atomizing core full of a micro-channel structure is characterized by comprising the following steps:
s1, preparing a silicon substrate (1);
s2, depositing an etching mask (4) on the silicon substrate (1), and processing an atomizing micro-channel (3) by using a dry etching process or a wet etching process;
s3, removing the mask (4) on the surface of the silicon substrate (1) by using a dry etching process or a wet etching process;
s4, oxidizing a layer of silicon oxide on the surface of the silicon substrate (1) to form a first oxide layer (11), and oxidizing a layer of silicon oxide on the inner surface of the atomizing microchannel (3) to form a second oxide layer (31);
s5, depositing a metal heating wire (2) on the surface of the first oxide layer (11), and making a specific pattern through a dry etching process or a wet etching process to finish the atomization core processing.
7. The method for manufacturing the MEMS silicon-based atomizing core with distributed micro-channel structure as claimed in claim 6, wherein in said step S2, the material of said mask (4) is one of photoresist, silicon oxide or silicon nitride.
8. The method as claimed in claim 6, wherein in step S5, the heating wire (2) is made of any one of Al, Ti/Au, Ti/Pt, Ti/TiN/Au, Ti/TiN/Pt, Ta/Au, Ta/Pt, Ta/TaN/Au, and Ta/TaN/Pt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210020887.5A CN114190613A (en) | 2022-01-04 | 2022-01-04 | MEMS silicon-based atomizing core with micro-channel structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210020887.5A CN114190613A (en) | 2022-01-04 | 2022-01-04 | MEMS silicon-based atomizing core with micro-channel structure and manufacturing method thereof |
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| CN202210020887.5A Pending CN114190613A (en) | 2022-01-04 | 2022-01-04 | MEMS silicon-based atomizing core with micro-channel structure and manufacturing method thereof |
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2022
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