CN114188454B - Ultraviolet light-emitting diode and light-emitting device - Google Patents
Ultraviolet light-emitting diode and light-emitting device Download PDFInfo
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- CN114188454B CN114188454B CN202111470298.9A CN202111470298A CN114188454B CN 114188454 B CN114188454 B CN 114188454B CN 202111470298 A CN202111470298 A CN 202111470298A CN 114188454 B CN114188454 B CN 114188454B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The invention provides an ultraviolet light-emitting diode and a light-emitting device, wherein the ultraviolet light-emitting diode comprises: a semiconductor layer sequence comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in this order and having a mesa extending the first semiconductor layer from one or more of the second semiconductor layers, the mesa exposing the first semiconductor layer, wherein the first semiconductor layer has a first conductivity and the second semiconductor layer has a second conductivity, the first conductivity being different from the second conductivity; the first ohmic contact electrode is positioned on the table top and forms ohmic contact with the first semiconductor layer; a second ohmic contact electrode on the second semiconductor layer and forming ohmic contact with the second semiconductor layer; a connection electrode formed on the second ohmic contact electrode and electrically connected to the second semiconductor layer through the ohmic contact electrode; the edge of the connecting electrode is positioned on the inner side of the edge of the second ohmic contact electrode, and a certain interval is arranged between the edge of the connecting electrode and the edge of the second ohmic contact electrode.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to an ultraviolet light emitting diode and a light emitting device.
Background
Light emitting diodes emitting ultraviolet rays having a wavelength in the range of 200 to 300nm can be used for various applications including sterilization devices, water or air purification devices, high-density optical recording devices, and the like.
Fig. 1 shows a schematic cross-sectional structure of a conventional uv light emitting diode, which includes a substrate 110, a semiconductor layer sequence 120, a first ohmic contact electrode 131, a second ohmic contact electrode 132, a first connection electrode 133, a second connection electrode 134, a first pad 151 and a second pad 152, wherein the semiconductor layer sequence 120 includes a first semiconductor layer 121, an active layer 122 and a second semiconductor layer 123 sequentially stacked on a surface of the substrate 110, and has a mesa extending from one or more of the second semiconductor layers to the first semiconductor layer, the mesa is exposed, the first ohmic contact electrode 131 forms an ohmic contact with the first semiconductor layer on the mesa, and the second ohmic contact electrode forms an ohmic contact with the second semiconductor layer.
Unlike near ultraviolet light emitting diodes or blue light emitting diodes, light emitting diodes emitting relatively deep ultraviolet light include a semiconductor layer containing Al such as AlGaN, whose lateral expansion rate of carriers is relatively low, and thus current collection easily occurs at the position of the mesa edge, thereby causing phenomena of local overheating and electrode burn, resulting in deterioration of reliability and shortened lifetime of the LED chip. As shown in fig. 2, a flare-out occurs at the edge of the ohmic contact electrode.
Disclosure of Invention
One of the objectives of the present invention is to provide an ultraviolet light emitting diode, which can effectively improve the reliability of the ultraviolet light emitting diode.
The invention relates to an ultraviolet light emitting diode, which comprises: a semiconductor layer sequence comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in this order and having a mesa extending the first semiconductor layer from one or more of the second semiconductor layers, the mesa exposing the first semiconductor layer, wherein the first semiconductor layer has a first conductivity and the second semiconductor layer has a second conductivity, the first conductivity being different from the second conductivity; the first ohmic contact electrode is positioned on the table top and forms ohmic contact with the first semiconductor layer; a second ohmic contact electrode on the second semiconductor layer and forming ohmic contact with the second semiconductor layer; a connection electrode formed on the second ohmic contact electrode and electrically connected to the second semiconductor layer through the ohmic contact electrode; the edge of the connecting electrode is positioned on the inner side of the edge of the second ohmic contact electrode, and a certain interval is arranged between the edge of the connecting electrode and the edge of the second ohmic contact electrode.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well.
Drawings
For a clearer description of embodiments of the invention or of the solutions of the prior art, the drawings that are needed in the description of the embodiments or of the prior art will be briefly described, it being obvious that the drawings in the description below are some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art; the positional relationships described in the drawings in the following description are based on the orientation of the elements shown in the drawings unless otherwise specified.
Fig. 1 is a schematic cross-sectional view of a conventional ultraviolet light emitting diode.
Fig. 2 is an enlarged view of a portion of the light emitting diode shown in fig. 1, showing the occurrence of a pop at the mesa edge of the chip.
Fig. 3 is a top view of an ultraviolet light emitting diode according to a first embodiment of the present invention.
Fig. 4 is a schematic longitudinal section view taken along the line A-A of fig. 1.
Fig. 5 is a top view of an n-type ohmic contact electrode of an ultraviolet light emitting diode according to a first embodiment of the present invention.
Fig. 6 is a top view of a connection electrode of an ultraviolet light emitting diode according to a first embodiment of the present invention.
Fig. 7 is a schematic cross-sectional view of an ultraviolet light emitting diode according to a second embodiment of the present invention.
Fig. 8 and 9 are top views showing a reflective layer of an ultraviolet light emitting diode according to a first embodiment of the present invention, wherein fig. 8 shows a reflective region overlapping an active layer, and fig. 9 shows a region not overlapping the active layer.
Fig. 10 shows the absorption curve of ITO.
Fig. 11 is a top view of an ultraviolet light emitting diode according to a third embodiment of the present invention.
Fig. 12 is a schematic longitudinal section view taken along the line B-B of fig. 11.
Fig. 13 is a top view of a connection electrode of an ultraviolet light emitting diode according to a third embodiment of the present invention.
Fig. 14 shows a reflectance curve of a reflective layer of an ultraviolet light emitting diode according to a third embodiment of the present invention.
Fig. 15 shows a luminance scatter diagram of an ultraviolet light emitting diode according to a second embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention; the technical features designed in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 3 and 4, fig. 3 is a schematic top view of a light emitting diode according to a first embodiment of the present invention, and fig. 4 is a schematic longitudinal cross-sectional view taken along a line A-A of fig. 1. The light emitting diode includes a substrate 110, a semiconductor layer sequence 120 fabricated on an upper surface of the substrate, a first ohmic contact electrode 131, a second ohmic contact electrode 132, a connection electrode 134, a first pad 151, a second pad 152, and an insulating layer 160. In this embodiment, the light emitting diode is a flip chip having a light extraction surface S12 on the substrate side.
The substrate 110 is used to support a semiconductor layer sequence 110. The substrate has a first surface S11 and a light extraction surface S12. The first surface S11 is a semiconductor layer formation surface. The light extraction surface S12 is a surface opposite to the first surface S11. The substrate 110 may be, for example, a sapphire substrate, or a growth substrate capable of forming a group III nitride semiconductor film. Preferably, the substrate is a transparent material or a semitransparent material, and in order to enhance the light extraction efficiency of the light emitting S12, in particular the light extraction effect from the substrate surface, the substrate 110 is preferably thickened, and may have a thickness of 250 μm to 900 μm.
Preferably, the first surface S11 of the substrate 110 is formed with a layer of aluminum nitride as the underlayer 111, and the underlayer 111 is in contact with the first surface S11, and its thickness is preferably 1 μm or less. Further, the aluminum nitride underlayer 111 includes a low temperature layer, an intermediate layer, and a high temperature layer in this order from the side close to the substrate 110, and can grow a semiconductor layer excellent in crystallinity. In other preferred embodiments, a series of hole structures are formed in the aluminum nitride underlayer to facilitate stress relief of the semiconductor layer sequence. The series of holes is preferably a series of elongated holes extending along the thickness of the aluminum nitride, which may be, for example, 0.5-1.5 μm deep.
The semiconductor layer sequence 120 is formed on the aluminum nitride bottom layer 111, and sequentially includes a first semiconductor layer 121, a second semiconductor layer 123 and an active layer 122 therebetween, for example, the first semiconductor layer 121 is an N-type layer, the second semiconductor layer 123 is a P-type layer, and the two layers may be inverted. The first semiconductor layer 121 is, for example, an n-type AlGaN layer. The active layer 122 is a layer that emits ultraviolet light, and has a well layer and a barrier layer, the number of repetitions of the well layer and the barrier layer being, for example, 1 to 10 inclusive, the well layer being, for example, an AlGaN layer, and the barrier layer being, for example, an AlGaN layer, but the Al composition of the well layer being lower than that of the barrier layer. The second semiconductor layer 123 is, for example, a p-type AlGaN layer or a p-type GaN layer, or a layer formed by stacking a p-type AlGaN layer and a p-type GaN layer in this order. In this embodiment, the second semiconductor layer 123 includes a p-type GaN surface layer having a thickness of 5 to 50nm, and the thin film GaN can be provided to achieve both internal quantum light emission efficiency and external quantum light emission efficiency of the device, and in particular, the p-type GaN layer within the thickness range contributes to lateral current spreading of p-side current without causing light absorption to be too serious.
In a preferred embodiment, the edge 121-1 of the first semiconductor layer is spaced from the edge 110-1 of the substrate, and the sidewall of the first semiconductor layer is located inside the sidewall of the substrate as shown in fig. 1 and 2. In the ultraviolet LED chip, the light emitting efficiency is improved by increasing the thickness of the substrate 110, but the difficulty of dicing the substrate is increased by increasing the thickness of the substrate, so in this embodiment, a certain distance is kept between the edge 121-1 of the first semiconductor layer and the edge 110-1 of the substrate, so that the semiconductor layer sequence is not damaged during dicing of the substrate, and the reliability of the light emitting diode is improved. Preferably, the distance is 2 μm or more, for example, 4 to 10 μm.
A partial region of the semiconductor layer sequence 120 is removed from the second semiconductor layer 123 and the active layer 122, exposing the first semiconductor layer 121, forming one or more mesas 120A, as shown in fig. 3 and 4. In this embodiment, a plurality of mesas 120A are preferably formed, the plurality of mesas 120A are used to form the first ohmic contact electrode 131, the distribution of the mesas 120A is not limited to that shown in fig. 4, and the plurality of mesas 120A may be designed according to the actual chip size and shape, and may be connected together or separated from each other. In the ultraviolet light emitting diode, since the current is difficult to diffuse due to the high Al content of the n-type semiconductor layer, the current cannot flow uniformly in the active layer and the p-type semiconductor layer, and the mesa 120A of the light emitting diode of the present embodiment is preferably disposed in an area of 20% or more and 70% or less of the area of the semiconductor layer sequence 120 and is relatively uniformly distributed in the semiconductor layer sequence. Preferably, the nearest distance from each region of the active layer 122 to the mesa is kept preferably 4-15 μm, so that the current spreading of the n-type semiconductor layer can be protected, which is beneficial to improving the internal quantum efficiency of the light emitting diode, thereby helping to reduce the forward voltage of the light emitting diode. When the area of the mesa area is too large, the area loss of the active area of the light emitting diode is too large, which is unfavorable for improving the light emitting efficiency of the light emitting diode.
As shown in fig. 5 and 3, the first ohmic contact electrode 131 is formed on the mesa 120A in direct contact with the first semiconductor layer 121. The first ohmic contact electrode 131 is selected from one or more of Cr, pt, au, ni, ti, al. Since the first semiconductor layer has a high Al composition, the first ohmic contact electrode 131 is alloyed with the first semiconductor layer by high temperature fusion after being deposited on the mesa, and thus forms a good ohmic contact with the first semiconductor layer, and may be, for example, ti-Al-Au alloy, ti-Al-Ni-Au alloy, cr-Al-Ti-Au alloy, ti-Al-Au-Pt alloy, or the like.
The second ohmic contact electrode 132 is formed on the surface of the second semiconductor layer 123 in contact with the second semiconductor layer to form an ohmic contact therewith. Preferably, the ohmic contact electrode 132 may be made of an oxide transparent conductive material or a metal alloy such as NiAu, niAg, niRh. In a specific embodiment, the distance D1 between the edge of the second ohmic contact electrode 132 and the edge of the second semiconductor layer 123 is preferably 2-15 μm, for example, may be 5-10 μm, which may reduce the risk of leakage (also referred to as reverse leakage current; abbreviated as IR) and electrostatic discharge (ESD) abnormality of the light emitting diode 1. Further, the distance between the end point or the edge of the upper surface of the second ohmic contact electrode 132 and the edge of the first ohmic contact electrode 131 is 4 μm or more, and when the distance is too small, a leakage phenomenon is liable to occur. In some embodiments, the spacing of the end point or edge of the upper surface of the second ohmic contact electrode 132 from the edge of the first ohmic contact electrode is 4 μm or more and 10 μm or less. The pitch of the end point or edge of the upper surface of the second ohmic contact electrode 132 and the edge of the first ohmic contact electrode 131 includes a pitch of 2 μm or more between the first ohmic contact electrode 131 and the edge of the upper surface of the second conductive type semiconductor layer 123, and a pitch of 2 μm or more between the second ohmic contact electrode 132 and the edge of the upper surface of the second conductive type semiconductor layer 123. By setting in this way, a certain distance between the second ohmic contact electrode 132 and the mesa on the epitaxial structure 20 can be ensured, so as to prevent the occurrence of electric leakage and ESD abnormality of the light emitting diode. Meanwhile, a certain distance between the second insulating layer 33 and the table top on the epitaxial structure 20 can be ensured, so that the side wall of the epitaxial structure 20 is etched to have a thick insulating layer, and the light emitting diode 1 is ensured to have good insulating protection and anti-leakage performance.
A second connection electrode 134 is formed on the second ohmic contact electrode 132 for diffusing current to the entire light emitting region. The connection electrode 134 is preferably a multi-layered metal stack, such as an adhesion layer, a conductive layer deposited sequentially on the ohmic contact electrode 132. The adhesion layer may be a Cr metal layer, the thickness of which is typically 1-10 nm, and the conductive layer may be an Al metal layer, the thickness of which may be more than 100nm, for example, 200-500 nm, and on one hand, al has a good conductive layer and on the other hand, al has a higher reflectivity for ultraviolet light, and preferably, the conductive layer has a reflectivity for light emitted from the active layer 122 of more than 70%. Further, the conductive layer is preferably internally provided with a stress buffer layer, and may be an Al/Ti alternating layer, for example. Further, an etching stopper layer Pt, an adhesion layer Ti, or the like may be formed on the conductive layer. Preferably, the first metal flow spreading layer 133 is formed on the first ohmic contact electrode 131 as shown in fig. 4. The first metal extension layer 133 may be formed in the same process as the second metal extension layer 134, and have the same metal stack structure. Preferably, the first metal extension layer 133 completely covers the first ohmic contact electrode 131, and may increase the height of the mesa region on the one hand and protect the first ohmic contact electrode 131 on the other hand.
In the deep ultraviolet light emitting diode structure, the lateral expansion rate of carriers of the semiconductor layer is relatively low, so that current aggregation easily occurs at the edge (close to the mesa) of the second ohmic contact electrode, and thus phenomena of local overheating and electrode burn are caused, thereby causing the reliability of the LED chip to be weakened and the service life to be shortened. Therefore, in a preferred embodiment, the connection electrode 134 is retracted compared to the second ohmic contact electrode 132, i.e. the edge 134-1 of the connection electrode 134 is located inside the edge 132-1 of the second ohmic contact electrode 132, and a space D5 is provided between the two electrodes, which serves to regulate current spreading and reduce failure rate of the product due to transient concentration of edge current. Preferably, the distance D5 is greater than or equal to 3 μm, more preferably 5-15 μm, so as to ensure a sufficient distance between the second ohmic contact electrode 132 and the connection electrode 134 at the edge of the mesa, improve the burning phenomenon of the ohmic contact electrode at the position of the deep ultraviolet light emitting diode near the mesa, reduce the burn rate of the product in the aging process, and improve the aging reliability of the deep ultraviolet product.
An insulating layer 160 is formed on the connection electrode 134 and on the side of the semiconductor layer sequence and on the side S13 of the mesa 120A to insulate the first connection electrode 133 from the second connection electrode 134. The insulating layer 160 has a first opening 171 and a second opening 172 exposing the first connection electrode 133 and the second connection electrode 134. The material of the insulating layer 160 comprises a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material comprises silica gel or glass, and the dielectric material comprises aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer 160 may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof, which may be, for example, a bragg reflector (DBR) formed by repeatedly stacking two materials.
The first bonding pad 151 and the second bonding pad 152 are disposed on the insulating layer 160, the first bonding pad 151 is electrically connected to the first connection electrode 133 through the first opening 171, and the second bonding pad 152 is electrically connected to the second connection electrode 134 through the second opening 172. The first pad 41 and the second pad 42 may be formed together using the same material in the same process, and thus may have the same layer configuration. The material of the first and second pads may be selected from one or more of Cr, pt, au, ni, ti, al, auSn.
FIG. 4 is a schematic view showing the flow of current after the LED is turned on, wherein the current L1 injected through the first bonding pad flows from the nearest distance to the active layer after the LED shown in FIG. 4 is turned on, so that the current density is strongest near the edge area of the mesa; the current L2 injected from the second bonding pad flows into the second ohmic contact electrode 132 through the second connection electrode, and because the second connection electrode 134 is arranged in a shrinking manner relative to the second ohmic contact electrode 132, only part of the current L23 can reach the edge region of the second semiconductor layer after passing through the transverse expansion of the second ohmic contact electrode, thereby avoiding the current from gathering in the edge region of the second ohmic contact electrode, which is close to the table surface, effectively solving the problem that the ohmic contact electrode of the deep ultraviolet light emitting diode is burnt at the position close to the table surface, and improving the aging reliability of the deep ultraviolet product.
Fig. 7 is a schematic cross-sectional view of a second embodiment of the invention, the corresponding top view of which can be seen with reference to fig. 3. The light emitting diode of the present embodiment is similar to the light emitting diode disclosed in the first embodiment, except that the ultraviolet light emitting diode disclosed in the present embodiment further improves the light emitting efficiency of the light emitting diode by providing a high reflection structure. Specifically, the thickness of the second ohmic contact electrode 132 is preferably 30nm or less, and the light absorption rate of the layer is reduced as much as possible. By providing a transparent or semitransparent conductive layer in the form of a thin film as a contact electrode, on the one hand, good ohmic contact with the second semiconductor layer can be achieved, and on the other hand, a significant reduction in the absorption effect due to an excessive thickness is avoided. In a preferred embodiment, the wavelength of light emitted by the active layer is less than 280nm, the ohmic contact electrode 132 is ITO, and the thickness of the ohmic contact electrode is 5-20 nm, for example, may be 10-15 nm, and the absorptivity of the ITO layer to light emitted by the active layer may be reduced to within 40%.
Further, the insulating layer 160 of the present embodiment is preferably a reflective insulating layer. As shown in the drawing, the light emitting diode has a mesa structure of a large area, and the second connection electrode 134 is only partially formed on the second ohmic contact electrode 132, so that the light emitting efficiency of the light emitting diode can be effectively improved by setting the insulating layer 160 to a highly reflective structure. Fig. 8 and 9 show the reflective area of the uv led according to the present embodiment, wherein the hatched portion in fig. 8 indicates the reflective area overlapping with the active layer, specifically, the area between the edge 123-1 of the second semiconductor layer and the edge 134-1 of the second connection electrode, and the light emitted from the active layer corresponding to this portion to the electrode side can be directly reflected by the reflective layer, so as to avoid being absorbed by the electrode below. Preferably, the area is 5 to 20% of the area of the upper surface of the substrate, for example 10%. The hatched portions in fig. 9 indicate regions not overlapping the active layer, including regions between the outer edge 134-1 of the second connection electrode and the edge 110-1 of the substrate, and regions between the inner edge 134-2 of the second connection electrode and the edge 123-1 of the second semiconductor layer, that is, regions near the mesa, preferably, the regions occupy 15 to 40% of the area of the upper surface of the substrate, for example, may be 25%.
Fig. 10 shows that the absorptivity of ITO of different thickness, when ITO is used as the current spreading layer, a sufficient thickness, typically 100nm or more, for example 110nm, is required, and the light yield for ultraviolet wavelength is high, so that the light emitting efficiency of the light emitting diode is difficult to be improved. The ohmic contact electrode 132 of the embodiment adopts a thin film structure with a thickness of less than 30nm, and is only used for forming ohmic contact with the second semiconductor layer, so that absorption of the ohmic contact electrode 133 to active layer emission is reduced, for example, when ITO with a thickness of 11nm is adopted, the absorption rate of ultraviolet light with a thickness of less than 310nm is less than 30%, and meanwhile, a connecting electrode with high reflectivity is adopted as a current expansion layer, so that current expansion and reflection are both considered. Further, the insulating layer 260 is configured to have a high reflection structure, so that the area not covered by the connection electrode can reflect through the insulating layer, thereby further improving the light emitting efficiency of the light emitting diode.
Referring to fig. 11 and 12, fig. 11 is a schematic top view of a light emitting diode according to a second embodiment of the present invention, and fig. 12 is a schematic longitudinal sectional view taken along a line B-B of fig. 11. The present embodiment discloses an ultraviolet light emitting diode, which is different from the second embodiment in that: the connection electrode 134 adopts a dense dot structure and is matched with a metal reflecting layer, so that the luminous efficiency of the light emitting diode is further improved.
In the deep ultraviolet light emitting diode structure, the reflection effect of aluminum in metal is best, but the contact of pure aluminum Al and ITO has poor adhesion, large contact resistance and the like, so Cr is arranged between the ITO and the Al as an adhesion layer in the industry, and the reflection effect is poor. In view of this problem, the present embodiment discloses an ultraviolet light emitting diode employing Al as the reflective layer 143, and a transparent adhesive layer 163 is provided between the ohmic contact electrode and the Al reflective layer.
Specifically, the ultraviolet light emitting diode includes: the semiconductor device comprises a substrate 110, a semiconductor layer sequence 120, ohmic contact electrodes 131-132, a connecting electrode 134, a transparent adhesion layer 163, an Al reflecting layer 143, a bonding pad electrode 151-152 and an insulating layer 164, wherein the semiconductor layer sequence is manufactured on the upper surface of the substrate. The first ohmic contact electrode 131 and the second ohmic contact electrode 132 may be provided with reference to the first embodiment. The present embodiment is more advantageous for use with a medium and large sized led chip, such as a chip having a side length of 20 mils or more. In the present embodiment, the semiconductor layer sequence 120 has a plurality of mesas 120A that are open to each other, distributed inside the semiconductor layer sequence. Preferably, the second semiconductor layer is rectangular or square along a length direction, the mesas are arranged parallel to each other in a direction perpendicular to the length direction of the chip, and the first ohmic contact electrode 131 is formed on the plurality of mesas and forms ohmic contact with the first semiconductor layer. The second ohmic contact electrode 132 is formed on the second semiconductor layer and forms an ohmic contact with the second semiconductor layer.
As shown in fig. 12 and 13, a connection electrode 134 is formed on the second ohmic contact electrode 132, and includes a series of densely-distributed dot-shaped metal blocks. The diameter D2 of each dot-shaped metal block may be 10 to 50 μm and the distance D3 of the adjacent metal blocks may be 10 to 100 μm, so that the metal may play a role of current spreading. When D2 has a value of less than 10 μm, contact resistance between the metal block and the ohmic contact electrode 132 may be increased to cause a forward voltage to increase; when the value of D3 is smaller than 10 mu m, a larger reflecting area is difficult to reserve; when the value of D2 exceeds 50 μm or the value of D3 exceeds 100 μm, the punctiform metal blocks are difficult to densely distribute, so that the current is uniformly spread and worsened, and the current spreading effect is difficult to achieve. In a preferred embodiment, the diameter D3 of the punctiform metal blocks is preferably 15-35 μm, and the distance D3 between adjacent metal blocks is preferably 15-35 μm, in which range, on the one hand, the punctiform metal blocks can achieve the effect of current spreading, and on the other hand, enough reflection windows can be reserved to reduce the light absorption effect of the metal blocks. In this embodiment, the forward voltage of the light emitting diode is ensured by controlling the pitch of the metal blocks. The laminated structure of the metal block can be provided with reference to the connection electrode of the first embodiment. Further, the first connection electrode 133 may be formed on the first ohmic contact electrode 131, and may protect the first ohmic contact electrode on the one hand and the mesa region on the other hand.
The transparent adhesive layer 163 covers the second ohmic contact electrode 134, the connection electrode 134 and the semiconductor layer sequence. In the present embodiment, the transparent adhesive layer 163 is preferably an insulating material, and thus the first connection electrode 133 and the second connection electrode 134 may be simultaneously insulated from each other. The transparent adhesive layer 163 has a first opening 171 and a third opening 173, wherein the first opening 171 exposes the first connection electrode 133, and the second opening corresponds to the metal blocks of the second connection electrode 134, and specifically, a third opening 173 is disposed above each metal block. The material of the transparent adhesion layer 163 may include aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. In one particular embodiment, the transparent adhesion layer 163 employs silicon dioxide, which has a thickness of 100nm or less. The Al metal reflective layer 143 is formed on the transparent adhesive layer 163 and is electrode-connected to the connection electrode 134 through the third opening 173, thereby connecting all the metal blocks into a plane while functioning as a current spreading. In some embodiments, an Al metal reflective layer (not shown) may be further formed on the first connection electrode 133, so that a height difference between different electrodes may be reduced, facilitating the subsequent arrangement of the pad electrode. In this embodiment, the thickness of the Al metal reflective layer 143 is preferably 80nm or more, for example, may be 100 to 300nm, and on the one hand, it may have good reflective power and on the other hand, may achieve good electrical conductivity.
In the light emitting diode structure of the embodiment, the thin film structure is adopted as the ohmic contact of the second semiconductor layer, so that the light absorption problem of the ohmic contact electrode can be effectively reduced; the dense punctiform metal blocks are adopted, the surfaces of the second ohmic contact electrode and the punctiform metal blocks are covered with a transparent adhesion layer, and an Al metal reflecting layer 143 is formed on the transparent adhesion layer, so that the punctiform metal blocks are connected into a surface to play a role in expanding, and an omnibearing reflecting mirror is formed with the transparent adhesion layer. The dot-shaped metal block structure 132 can reserve enough reflection area of the Al reflecting layer, especially the area overlapped with the active layer, so that the reflectivity is effectively improved, and on the other hand, the dot-shaped metal block and the ITO can form good ohmic contact, the problem of large contact resistance between the Al and the ITO is solved, and the problem of adhesiveness between the ITO and the Al metal layer is solved by the transparent adhesive layer.
Fig. 14 shows the reflectance curves of light emitting diodes of different structures. The dot curve corresponds to the reflectivity of the Al metal reflecting layer, the triangle curve corresponds to the reflectivity of the existing light-emitting diode adopting the CrAl alloy as the second electrode, and the x curve corresponds to the reflectivity of the existing light-emitting diode adopting the NiAu alloy as the second electrode. As can be seen from the graph, the reflectivity of the LED structure in the embodiment is greater than 80% in the wavelength range of 260-300 nm, which is far higher than that of the existing NiAu electrode or CrAl electrode.
Fig. 15 shows a luminance scatter diagram of different led chip structures of the same epitaxial structure at an input current of 40mA, wherein the dot curve represents the luminance of the led of the present embodiment at different wavelengths, and the x curve represents the luminance of the led of the prior art using CrAl as the second electrode. As can be seen from the figure, the light emitting diode according to the embodiment has a greatly improved brightness compared with the light emitting diode having the conventional CrAl electrode structure under the same epitaxial structure and the same input current.
The embodiment discloses a light emitting device, which adopts the light emitting diode structure provided by any embodiment, and the specific structure and technical effects thereof are not repeated. The light emitting device may be a light emitting device for a UV product or a UVC product.
In addition, it should be understood by those skilled in the art that although many problems exist in the prior art, each embodiment or technical solution of the present invention may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Claims (20)
1. An ultraviolet light emitting diode comprising:
a semiconductor layer sequence comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in this order and having a mesa extending the first semiconductor layer from one or more of the second semiconductor layers, the mesa exposing the first semiconductor layer, wherein the first semiconductor layer has a first conductivity and the second semiconductor layer has a second conductivity, the first conductivity being different from the second conductivity;
the first ohmic contact electrode is positioned on the table top and forms ohmic contact with the first semiconductor layer;
a second ohmic contact electrode on the second semiconductor layer and forming ohmic contact with the second semiconductor layer;
a connection electrode formed on the second ohmic contact electrode and electrically connected to the second semiconductor layer through the ohmic contact electrode;
the method is characterized in that: the semiconductor layer sequence has a semiconductor layer containing Al, the edge of the connection electrode is positioned inside the edge of the second ohmic contact electrode, and a certain interval is arranged between the connection electrode and the second ohmic contact electrode, and the interval is 3-15 mu m.
2. The ultraviolet light emitting diode of claim 1, wherein: the second semiconductor layer includes an AlGaN layer and a GaN layer having a thickness of 50nm or less.
3. The ultraviolet light emitting diode of claim 1, wherein: the edge of the second ohmic contact electrode is positioned at the inner side of the edge of the second semiconductor layer, and the edge have a distance of 2-15 mu m.
4. The ultraviolet light emitting diode of claim 1, wherein: the thickness of the second ohmic contact electrode is 150nm or less.
5. The ultraviolet light emitting diode of claim 1, wherein: and the distance between the edge of the connecting electrode and the edge of the second ohmic contact electrode is more than or equal to 5 mu m.
6. The ultraviolet light emitting diode of claim 1, wherein: the connection electrode comprises a multi-metal lamination layer, and comprises an adhesion layer, a conductive layer and an etching stop layer in sequence from the second ohmic contact electrode.
7. The ultraviolet light emitting diode of claim 6, wherein: the conductive layer has a reflectivity of 70% or more for light emitted from the active layer.
8. The ultraviolet light emitting diode of claim 1, wherein: the semiconductor device further comprises an insulating layer which is formed on the connecting electrode, the side surface of the semiconductor layer sequence and the side surface of the table top, and the first ohmic contact electrode and the second connecting electrode are insulated.
9. The ultraviolet light emitting diode of claim 8, wherein: the insulating layer is an insulating reflecting layer.
10. The ultraviolet light emitting diode of claim 1, wherein: the connection electrode comprises a series of metal block arrays and a metal reflecting layer, and the metal blocks form ohmic contact with the second ohmic contact electrode.
11. The ultraviolet light emitting diode of claim 10, wherein: the metal blocks are uniformly distributed on the second ohmic contact electrode, and the distance between the metal blocks is 10-100 mu m.
12. The ultraviolet light emitting diode of claim 10, wherein: the transparent adhesion layer is formed on the second ohmic contact electrode and the metal block array and is provided with a first opening and a second opening, the second opening is positioned above the metal block, and the metal reflection layer is electrically connected to the metal block through the second opening.
13. An ultraviolet light emitting diode according to claim 12 wherein: the transparent adhesive layer is made of silicon dioxide, hafnium oxide, aluminum oxide, magnesium fluoride, silicon nitride and titanium oxide.
14. The ultraviolet light emitting diode of claim 10, wherein: the metal reflective layer has a reflectivity of 75% or more for light emitted from the active layer.
15. The ultraviolet light emitting diode of claim 1, wherein: the center wavelength emitted by the active layer is 220-400 nm, and the first semiconductor layer is an n-type AlGaN semiconductor layer.
16. The ultraviolet light emitting diode of claim 1, wherein: the material of the first ohmic contact electrode is selected from one or more of Cr, pt, au, ni, ti, al.
17. The ultraviolet light emitting diode of claim 1, wherein: the material of the connection electrode is selected from one or more of Cr, pt, au, ni, ti, al.
18. The ultraviolet light emitting diode of claim 1, wherein: the semiconductor device further comprises a substrate for supporting the semiconductor layer sequence, wherein the thickness of the substrate is 250-900 mu m, and a gap is reserved between the edge of the first semiconductor layer and the edge of the substrate, and the gap is larger than or equal to 2 mu m.
19. The ultraviolet light emitting diode of claim 1, wherein: the semiconductor device further comprises a substrate for supporting the semiconductor layer sequence, the thickness of the substrate is 250-900 mu m, and the nearest distance between the second semiconductor layer and the side wall of the substrate is more than or equal to 30 mu m.
20. A light-emitting device, characterized in that the ultraviolet light-emitting diode according to any one of claims 1 to 19 is employed.
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| CN202311863329.6A CN117613165A (en) | 2021-12-03 | 2021-12-03 | Ultraviolet light-emitting diode and light-emitting device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011192960A (en) * | 2010-02-17 | 2011-09-29 | Toyoda Gosei Co Ltd | Semiconductor light-emitting element |
| CN105845801A (en) * | 2016-06-13 | 2016-08-10 | 天津三安光电有限公司 | Light emitting diode and manufacturing method therefor |
| CN106663723A (en) * | 2014-08-05 | 2017-05-10 | 首尔伟傲世有限公司 | Light emitting element |
| CN111446336A (en) * | 2020-04-01 | 2020-07-24 | 厦门三安光电有限公司 | Light emitting diode |
| CN212342655U (en) * | 2020-04-01 | 2021-01-12 | 厦门三安光电有限公司 | Light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP4243094A3 (en) * | 2011-09-16 | 2023-12-06 | Seoul Viosys Co., Ltd. | Light emitting diode |
| KR20160025455A (en) * | 2014-08-27 | 2016-03-08 | 서울바이오시스 주식회사 | Light emitting device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011192960A (en) * | 2010-02-17 | 2011-09-29 | Toyoda Gosei Co Ltd | Semiconductor light-emitting element |
| CN106663723A (en) * | 2014-08-05 | 2017-05-10 | 首尔伟傲世有限公司 | Light emitting element |
| CN105845801A (en) * | 2016-06-13 | 2016-08-10 | 天津三安光电有限公司 | Light emitting diode and manufacturing method therefor |
| CN111446336A (en) * | 2020-04-01 | 2020-07-24 | 厦门三安光电有限公司 | Light emitting diode |
| CN212342655U (en) * | 2020-04-01 | 2021-01-12 | 厦门三安光电有限公司 | Light emitting diode |
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