CN114171616A - Crystal silicon BIPV building component and manufacturing method thereof - Google Patents
Crystal silicon BIPV building component and manufacturing method thereof Download PDFInfo
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- CN114171616A CN114171616A CN202111155484.3A CN202111155484A CN114171616A CN 114171616 A CN114171616 A CN 114171616A CN 202111155484 A CN202111155484 A CN 202111155484A CN 114171616 A CN114171616 A CN 114171616A
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- crystalline silicon
- pvb layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 238000013084 building-integrated photovoltaic technology Methods 0.000 title claims abstract 21
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 91
- 238000010248 power generation Methods 0.000 claims abstract description 49
- 239000005357 flat glass Substances 0.000 claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 239000003086 colorant Substances 0.000 abstract description 2
- 239000002313 adhesive film Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/20—Supporting structures directly fixed to an immovable object
- H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
- H02S20/26—Building materials integrated with PV modules, e.g. façade elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
The invention provides a crystalline silicon BIPV building component which sequentially comprises outer plate glass, at least one first transparent PVB layer, a crystalline silicon power generation unit, a third PVB layer and inner plate glass from outside to inside from one surface facing the sun; the outer plate glass and the inner plate glass meet the building specification requirements, and the resistivity of the first transparent PVB layer meets the PID attenuation requirements of the crystalline silicon BIPV building component. The invention also provides a manufacturing method of the crystalline silicon BIPV building component, which is used for manufacturing the crystalline silicon BIPV building component. The crystal silicon BIPV building component has more mountable positions and stronger applicability; the crystalline silicon BIPV building component can be designed into various colors, can be matched with various different building styles and has better aesthetic property; the crystalline silicon BIPV building component has better reliability and longer service life; the crystalline silicon BIPV building component has high generating capacity. The manufacturing method of the crystalline silicon BIPV building component is efficient and rapid.
Description
Technical Field
The invention relates to the technical field related to photovoltaic buildings, in particular to a crystalline silicon BIPV building component and a manufacturing method thereof.
Background
In order to promote energy conservation and emission reduction of buildings, the prior art mainly starts from two aspects: on one hand, the 'passive' emission reduction is carried out by improving the material efficiency, popularizing and using low-carbon materials, high-efficiency heat-insulation building envelope structures and the like; and on the other hand, the method is widely popularized to the roof distributed photovoltaic power station, and the roof area is fully utilized for emission reduction.
However, passive buildings have some disadvantages: firstly, the thickness of an outer wall heat-insulating layer needs to be increased in a passive building, the building area is increased, and the room rate is reduced; the passive building needs to be adjusted under different climatic conditions, and the passive building also needs to be adjusted aiming at different types of buildings, so that the applicability is poor; in addition, passive form building reduction energy consumption is limited, lacks the promotion space, and the whole cost is higher simultaneously.
Rooftop distributed photovoltaic power plants also present some drawbacks: the roof area is limited, and other facilities need to be installed, so that the available area for installing the photovoltaic device is small, and especially for high-rise buildings, the energy-saving and emission-reducing effects are limited; in addition, the consistency of the roof distributed photovoltaic power station and the building is poor, and the overall attractiveness is affected.
The Building Integrated Photovoltaic (BIPV) is used as a combination point of building and photovoltaic, can solve the problems of the existing passive building and a roof distributed photovoltaic power station, and has wide development prospect. In summary, there is a need in the art for a BIPV building component with a wider application range, a better aesthetic appearance and a higher power generation performance.
Disclosure of Invention
In view of the above, the present invention provides a crystalline silicon BIPV building component, which is designed according to the requirements of the building industry and combined with a crystalline silicon power generation structure to be suitable for building photovoltaic power generation.
Another object of the present invention is to provide a method for manufacturing a crystalline silicon BIPV building component, which is used for manufacturing the crystalline silicon BIPV building component.
In order to achieve the purpose, the invention provides a crystalline silicon BIPV building component which sequentially comprises outer plate glass, at least one first transparent PVB layer, a crystalline silicon power generation unit, a third PVB layer and inner plate glass from outside to inside from a surface facing the sun; the outer plate glass and the inner plate glass meet the building specification requirements, and the resistivity of the first transparent PVB layer meets the PID attenuation requirements of the crystalline silicon BIPV building component.
Preferably, at least one second transparent PVB layer is included, the second transparent PVB layer is positioned between the crystalline silicon power generation unit and the third PVB layer, and the resistivity of the second transparent PVB layer conforms to the PID attenuation requirement of the crystalline silicon BIPV building component.
Preferably, the third PVB layer is in the same color as the crystalline silicon power generation unit.
Preferably, the crystalline silicon power generation unit is composed of a plurality of crystalline silicon battery pieces, the crystalline silicon power generation unit is provided with a visible copper strip, and the surface of the visible copper strip is consistent with the color of the crystalline silicon battery pieces.
The invention provides a manufacturing method of a crystalline silicon BIPV building component, which is used for the crystalline silicon BIPV building component and comprises the following steps:
(A) selecting glass meeting the building requirements as outer plate glass and inner plate glass;
(B) selecting a first transparent PVB layer meeting the PID attenuation requirement of a component;
(C) preparing a crystalline silicon power generation unit;
(D) selecting a third PVB layer with consistent color according to the color of the crystalline silicon power generation unit;
(E) and packaging and laminating the outer plate glass, the at least one first transparent PVB layer, the crystalline silicon power generation unit, the third PVB layer and the inner plate glass, mounting a junction box on the crystalline silicon power generation unit, and sealing the photovoltaic silica gel.
The invention provides a manufacturing method of a crystalline silicon BIPV building component, which is used for the crystalline silicon BIPV building component and comprises the following steps:
(A) selecting glass meeting the building requirements as outer plate glass and inner plate glass;
(B) selecting a first transparent PVB layer and a second transparent PVB layer which meet the PID attenuation requirement of a component;
(C) preparing a crystalline silicon power generation unit;
(D) selecting a third PVB layer with consistent color according to the color of the crystalline silicon power generation unit;
(E) the method comprises the following steps of packaging and laminating outer plate glass, at least one first transparent PVB layer, the crystalline silicon power generation unit, at least one second transparent PVB layer, a third PVB layer and inner plate glass, installing a junction box on the crystalline silicon power generation unit, and sealing photovoltaic silica gel.
Preferably, the step (C) is followed by the step (C1) of processing the surface of the visible copper strip of the crystalline silicon power generation unit by using a film pasting or coating mode, so that the extension of the visible copper strip is consistent with the color of the crystalline silicon cell of the crystalline silicon power generation unit.
Compared with the prior art, the crystal silicon BIPV building component and the manufacturing method thereof disclosed by the invention have the advantages that: the crystal silicon BIPV building component has more mountable positions and stronger applicability; the crystal silicon BIPV building component can be designed into various colors, can be matched with various different building styles and has better aesthetic property; the crystalline silicon BIPV building component has better reliability and longer service life; the crystalline silicon BIPV building component has high generating capacity. The manufacturing method of the crystalline silicon BIPV building component is efficient and rapid.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural view of a crystalline silicon BIPV building component according to the present invention.
FIG. 2 is a flow chart of a method of manufacturing a crystalline silicon BIPV building component according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, a crystalline silicon BIPV building component according to the present application includes, in order from the outside to the inside, an outer plate glass 1, at least one first transparent PVB layer 2, a crystalline silicon power generation unit 3, at least one second transparent PVB layer 4, a third PVB layer 5, and an inner plate glass 6 from the side facing the sun.
Wherein, the outer plate glass 1 and the inner plate glass 6 are both made of glass meeting the building requirements, such as 5mm super white toughened glass, 5mm common white toughened glass and the like. Set up planking proportion 1 and interior plate glass 6 and satisfy the building requirement, be favorable to improving the mechanical properties of crystal silicon BIPV building element to improve the reliability and the life of crystal silicon BIPV building element.
The electrical resistivity of both the first transparent PVB layer 2 and the second transparent PVB layer 4 meets the PID attenuation requirements of the crystalline silicon BIPV building component. The electrical resistivity of the first transparent PVB layer 2 and the second transparent PVB layer 4 meets the PID attenuation requirement of the crystalline silicon BIPV building component, and the power generation capacity of the crystalline silicon BIPV building component can be ensured. In addition, due to the high light transmittance of the first transparent PVB layer 2, the power generation capacity of the crystalline silicon BIPV building component can be further ensured.
It is noted that when the resistivity of the third PVB layer 5 meets the PID attenuation requirements of the crystalline silicon BIPV building component, the second transparent PVB layer 4 can be eliminated, simplifying the component structure.
The crystalline silicon power generation unit 3 is composed of a plurality of crystalline silicon battery pieces, and the crystalline silicon battery pieces can be set to be blue, black, red and the like. Crystalline silicon cells can take a variety of forms including, but not limited to, single crystal silicon, polycrystalline silicon. The technology for conducting and connecting the crystalline silicon battery pieces comprises technologies of welding strip interconnection, conductive adhesive bonding and the like, and the electrical connection among the strings comprises the modes of series connection, parallel connection, first series connection and then parallel connection, and first parallel connection and then series connection. The crystalline silicon power generation unit 3 is provided with a visible copper strip, the surface of the visible copper strip can be subjected to film pasting treatment, and the surface of the visible copper strip can also be subjected to coating treatment (including but not limited to color treatment before welding of the conductive copper strip, or spraying treatment, printing treatment and the like after welding), so that the color of the surface of the visible copper strip is consistent with that of the crystalline silicon battery piece. The whole color of the crystal silicon power generation unit 3 is consistent and more attractive.
Further, the third PVB layer 5 is in the same color as the crystalline silicon power generation unit 3. For example, when the crystalline silicon power generation unit 3 is dark blue, the third PVB layer 5 may select a dark blue PVB adhesive film or a black adhesive film; when the crystalline silicon power generation unit 3 is light blue, the third PVB layer 5 can select a light blue PVB adhesive film; when the crystal silicon power generation unit 3 is red, the third PVB layer 5 can select a red PVB adhesive film. The crystal silicon BIPV building component is uniform in overall color, good in appearance consistency and more attractive.
As shown in fig. 2, a method for manufacturing a crystalline silicon BIPV building component according to the present application includes the steps of:
(A) selecting glass meeting the building requirements as outer plate glass and inner plate glass;
(B) selecting a first transparent PVB layer and a second transparent PVB layer which meet the PID attenuation requirement of a component;
(C) preparing a crystalline silicon power generation unit;
(D) selecting a third PVB layer with consistent color according to the color of the crystalline silicon power generation unit;
(E) the method comprises the following steps of packaging and laminating outer plate glass, at least one first transparent PVB layer, the crystalline silicon power generation unit, at least one second transparent PVB layer, a third PVB layer and inner plate glass, installing a junction box on the crystalline silicon power generation unit, and sealing photovoltaic silica gel.
And (C1) processing the surface of the visible copper strip of the crystalline silicon power generation unit by using a film pasting or coating mode after the step (C), so that the extension of the visible copper strip is consistent with the color of the crystalline silicon battery plate of the crystalline silicon power generation unit.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A crystal silicon BIPV building component is characterized by comprising outer plate glass, at least one first transparent PVB layer, a crystal silicon power generation unit, a third PVB layer and inner plate glass in sequence from outside to inside from a surface facing the sun; the outer plate glass and the inner plate glass meet the building specification requirements, and the resistivity of the first transparent PVB layer meets the PID attenuation requirements of the crystalline silicon BIPV building component.
2. The BIPV building component of claim 1, comprising at least one second transparent PVB layer, the second transparent PVB layer being positioned between the crystalline silicon power generating unit and the third PVB layer, and the electrical resistivity of the second transparent PVB layer being in accordance with the PID attenuation requirements of the crystalline silicon BIPV building component.
3. The BIPV building component of claim 2, wherein the third PVB layer is a color consistent with the crystalline silicon power generation unit.
4. The BIPV building component of claim 2, wherein the crystalline silicon power generation unit is composed of a plurality of crystalline silicon cells, the crystalline silicon power generation unit has a visible copper strip, and the surface of the visible copper strip is the same as the color of the crystalline silicon cells.
5. A method of manufacturing a crystalline silicon BIPV building component for manufacturing a crystalline silicon BIPV building component according to claim 1, comprising the steps of:
(A) selecting glass meeting the building requirements as outer plate glass and inner plate glass;
(B) selecting a first transparent PVB layer meeting the PID attenuation requirement of a component;
(C) preparing a crystalline silicon power generation unit;
(D) selecting a third PVB layer with consistent color according to the color of the crystalline silicon power generation unit;
(E) the method comprises the steps of packaging and laminating outer plate glass, at least one first transparent PVB layer, the crystalline silicon power generation unit, a third PVB layer and inner plate glass, installing a junction box on the crystalline silicon power generation unit, and sealing photovoltaic silica gel.
6. A method of manufacturing a crystalline silicon BIPV building component, for manufacturing a crystalline silicon BIPV building component according to any of claims 2 to 4, comprising the steps of:
(A) selecting glass meeting the building requirements as outer plate glass and inner plate glass;
(B) selecting a first transparent PVB layer and a second transparent PVB layer which meet the PID attenuation requirement of a component;
(C) preparing a crystalline silicon power generation unit;
(D) selecting a third PVB layer with consistent color according to the color of the crystalline silicon power generation unit;
(E) the method comprises the following steps of packaging and laminating outer plate glass, at least one first transparent PVB layer, a crystal silicon power generation unit, at least one second transparent PVB layer, a third PVB layer and inner plate glass, installing a junction box on the crystal silicon power generation unit, and sealing photovoltaic silica gel.
7. The manufacturing method of crystalline silicon BIPV building component as claimed in claim 5 or 6, characterized in that, the step (C) is followed by the step (C1) of processing the surface of the visible copper strip of the crystalline silicon power generation unit by using a film pasting or coating method, so that the extension of the visible copper strip is consistent with the color of the crystalline silicon cell of the crystalline silicon power generation unit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111155484.3A CN114171616A (en) | 2021-09-29 | 2021-09-29 | Crystal silicon BIPV building component and manufacturing method thereof |
| PCT/CN2022/086805 WO2023050772A1 (en) | 2021-09-29 | 2022-04-14 | Crystalline silicon bipv building component and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111155484.3A CN114171616A (en) | 2021-09-29 | 2021-09-29 | Crystal silicon BIPV building component and manufacturing method thereof |
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| CN114171616A true CN114171616A (en) | 2022-03-11 |
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| WO (1) | WO2023050772A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115274898A (en) * | 2022-08-01 | 2022-11-01 | 永臻科技股份有限公司 | Latticed crystal silicon BIPV building component |
| WO2023050772A1 (en) * | 2021-09-29 | 2023-04-06 | 永臻科技股份有限公司 | Crystalline silicon bipv building component and manufacturing method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102956734A (en) * | 2012-11-26 | 2013-03-06 | 中山市创科科研技术服务有限公司 | Polycrystalline silicon battery component with adjustable light transmittance |
| CN103746020A (en) * | 2013-12-21 | 2014-04-23 | 揭阳市宏光镀膜玻璃有限公司 | Solar cell module |
| CN203950818U (en) * | 2014-05-26 | 2014-11-19 | 海润光伏科技股份有限公司 | The anti-PID photovoltaic module of low cost |
| CN111769171A (en) * | 2019-03-29 | 2020-10-13 | 北京汉能光伏技术有限公司 | Colored solar component, colored solar curtain wall and preparation method thereof |
| CN212129713U (en) * | 2020-04-26 | 2020-12-11 | 北京金茂绿建科技有限公司 | Intelligent PV-LED light-emitting glass |
| CN114171616A (en) * | 2021-09-29 | 2022-03-11 | 永臻科技股份有限公司 | Crystal silicon BIPV building component and manufacturing method thereof |
| CN216213485U (en) * | 2021-09-29 | 2022-04-05 | 永臻科技股份有限公司 | Crystal silicon BIPV building component |
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- 2021-09-29 CN CN202111155484.3A patent/CN114171616A/en active Pending
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- 2022-04-14 WO PCT/CN2022/086805 patent/WO2023050772A1/en active Application Filing
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023050772A1 (en) * | 2021-09-29 | 2023-04-06 | 永臻科技股份有限公司 | Crystalline silicon bipv building component and manufacturing method therefor |
| CN115274898A (en) * | 2022-08-01 | 2022-11-01 | 永臻科技股份有限公司 | Latticed crystal silicon BIPV building component |
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| WO2023050772A1 (en) | 2023-04-06 |
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