CN216213485U

CN216213485U - Crystal silicon BIPV building component

Info

Publication number: CN216213485U
Application number: CN202122382769.2U
Authority: CN
Inventors: 魏青竹; 姬明良; 蒋建彗; 王春智; 徐坚; 何招华; 汪献利
Original assignee: Yongzhen Technology Co ltd
Current assignee: Yongzhen Technology Co ltd
Priority date: 2021-09-29
Filing date: 2021-09-29
Publication date: 2022-04-05
Anticipated expiration: 2031-09-29

Abstract

The utility model provides a crystalline silicon BIPV building component which sequentially comprises outer plate glass, at least one first transparent PVB layer, a crystalline silicon power generation unit, a third PVB layer and inner plate glass from outside to inside from one surface facing the sun; the outer plate glass and the inner plate glass meet the building specification requirements, and the resistivity of the first transparent PVB layer meets the PID attenuation requirements of the crystalline silicon BIPV building component. The crystal silicon BIPV building component has more mountable positions and stronger applicability; the crystalline silicon BIPV building component can be designed into various colors, can be matched with various different building styles and has better aesthetic property; the crystalline silicon BIPV building component has better reliability and longer service life; the crystalline silicon BIPV building component has high generating capacity.

Description

Crystal silicon BIPV building component

Technical Field

The utility model relates to the technical field related to photovoltaic buildings, in particular to a crystalline silicon BIPV building component.

Background

With the continuous promotion of the development of green and low carbon, the reduction of the carbon emission intensity becomes the key point for realizing 'carbon peak reaching' and 'carbon neutralization'. Among them, reducing carbon emissions from buildings is an important issue. The green and low-carbon development of the building is realized, and the whole carbon peak reaching and carbon neutralization process can be effectively promoted.

In order to promote energy conservation and emission reduction of buildings, the prior art mainly starts from two aspects: on one hand, the passive emission reduction is carried out by improving the material efficiency, popularizing and using low-carbon materials, high-efficiency heat-insulation building envelope structures and the like; and on the other hand, the method is widely popularized to the roof distributed photovoltaic power station, and the roof area is fully utilized for emission reduction.

However, passive buildings have some disadvantages: firstly, the passive building needs to increase the thickness of an outer wall heat-insulating layer, increase the building area and reduce the building rate; the passive building needs to be adjusted under different climatic conditions, and the passive building also needs to be adjusted aiming at different types of buildings, so that the applicability is poor; in addition, passive form building reduction energy consumption is limited, lacks the promotion space, and the whole cost is higher simultaneously.

Rooftop distributed photovoltaic power plants also present some drawbacks: the roof area is limited, and other facilities need to be installed, so that the available area for installing the photovoltaic device is small, and especially for high-rise buildings, the energy-saving and emission-reducing effects are limited; in addition, the consistency of the roof distributed photovoltaic power station and the building is poor, and the overall attractiveness is affected.

The Building Integrated Photovoltaic (BIPV) is used as a combination point of building and photovoltaic, can solve the problems of the existing passive building and a roof distributed photovoltaic power station, and has wide development prospect. In summary, there is a need in the art for a BIPV building component with a wide application range, a high aesthetic value, and a high power generation performance.

SUMMERY OF THE UTILITY MODEL

In view of the above, the present invention provides a crystalline silicon BIPV building component, which is designed according to the requirements of the building industry, and is combined with a crystalline silicon power generation structure to be suitable for building photovoltaic power generation.

In order to achieve the purpose, the utility model provides a crystalline silicon BIPV building component which sequentially comprises outer plate glass, at least one first transparent PVB layer, a crystalline silicon power generation unit, a third PVB layer and inner plate glass from outside to inside from a surface facing the sun; the outer plate glass and the inner plate glass meet the building specification requirements, and the resistivity of the first transparent PVB layer meets the PID attenuation requirements of the crystalline silicon BIPV building component.

Preferably, at least one second transparent PVB layer is included, the second transparent PVB layer is positioned between the crystalline silicon power generation unit and the third PVB layer, and the resistivity of the second transparent PVB layer conforms to the PID attenuation requirement of the crystalline silicon BIPV building component.

Preferably, the third PVB layer is in the same color as the crystalline silicon power generation unit.

Preferably, the crystalline silicon power generation unit is composed of a plurality of crystalline silicon battery pieces, the crystalline silicon power generation unit is provided with a visible copper strip, and the surface of the visible copper strip is consistent with the color of the crystalline silicon battery pieces.

Compared with the prior art, the crystal silicon BIPV building component disclosed by the utility model has the advantages that: the crystal silicon BIPV building component has more mountable positions and stronger applicability; the crystalline silicon BIPV building component can be designed into various colors, can be matched with various different building styles and has better aesthetic property; the crystalline silicon BIPV building component has better reliability and longer service life.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic structural view of a crystalline silicon BIPV building component according to the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

As shown in fig. 1, a crystalline silicon BIPV building component according to the present application includes, in order from the outside to the inside, an outer plate glass 1, at least one first transparent PVB layer 2, a crystalline silicon power generation unit 3, at least one second transparent PVB layer 4, a third PVB layer 5, and an inner plate glass 6 from the side facing the sun.

Wherein, the outer plate glass 1 and the inner plate glass 6 are both made of glass meeting the building requirements, such as 5mm super white toughened glass, 5mm common white toughened glass and the like. The outer plate proportion 1 and the inner plate glass 6 are arranged to meet the building requirements, and the mechanical performance of the crystalline silicon BIPV building component is improved, so that the reliability and the service life of the crystalline silicon BIPV building component are improved.

The electrical resistivity of both the first transparent PVB layer 2 and the second transparent PVB layer 4 meets the PID attenuation requirements of the crystalline silicon BIPV building component. The electrical resistivity of the first transparent PVB layer 2 and the second transparent PVB layer 4 meets the PID attenuation requirement of the crystalline silicon BIPV building component, and the power generation capacity of the crystalline silicon BIPV building component can be ensured. In addition, due to the high light transmittance of the first transparent PVB layer 2, the power generation capacity of the crystalline silicon BIPV building component can be further ensured.

It is noted that when the resistivity of the third PVB layer 5 meets the PID attenuation requirements of the crystalline silicon BIPV building component, the second transparent PVB layer 4 can be eliminated, simplifying the component structure.

The crystalline silicon power generation unit 3 is composed of a plurality of crystalline silicon battery pieces, and the crystalline silicon battery pieces can be set to be blue, black, red and other colors. Crystalline silicon cells can take a variety of forms including, but not limited to, single crystal silicon, polycrystalline silicon. The technology for conducting and connecting the crystalline silicon battery pieces comprises technologies of welding strip interconnection, conductive adhesive bonding and the like, and the electrical connection among the strings comprises the modes of series connection, parallel connection, first series connection and then parallel connection, and first parallel connection and then series connection. The crystalline silicon power generation unit 3 is provided with a visible copper strip, the surface of the visible copper strip can be subjected to film pasting treatment, and the surface of the visible copper strip can be further subjected to coating treatment (including but not limited to color treatment before welding of the conductive copper strip, or spraying treatment, printing treatment and the like after welding), so that the color of the surface of the visible copper strip is consistent with that of the crystalline silicon battery piece. The whole color of the crystal silicon power generation unit 3 is consistent and more attractive.

Further, the third PVB layer 5 is in the same color as the crystalline silicon power generation unit 3. For example, when the crystalline silicon power generation unit 3 is dark blue, the third PVB layer 5 may select a dark blue PVB adhesive film or a black adhesive film; when the crystalline silicon power generation unit 3 is light blue, the third PVB layer 5 can select a light blue PVB adhesive film; when the crystalline silicon power generation unit 3 is red, the third PVB layer 5 may select a red PVB adhesive film. The crystal silicon BIPV building component is uniform in overall color, good in appearance consistency and more attractive.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A crystal silicon BIPV building component is characterized by comprising outer plate glass, at least one first transparent PVB layer, a crystal silicon power generation unit, a third PVB layer and inner plate glass in sequence from outside to inside from a surface facing the sun; the outer plate glass and the inner plate glass meet the building specification requirements, and the resistivity of the first transparent PVB layer meets the PID attenuation requirements of the crystalline silicon BIPV building component.

2. The BIPV building component of claim 1, comprising at least one second transparent PVB layer, the second transparent PVB layer being positioned between the crystalline silicon power generating unit and the third PVB layer, and the electrical resistivity of the second transparent PVB layer being in accordance with the PID attenuation requirements of the crystalline silicon BIPV building component.

3. The BIPV building component of claim 2, wherein the third PVB layer is a color consistent with the crystalline silicon power generation unit.

4. The BIPV building component of claim 2, wherein the crystalline silicon power generation unit is composed of a plurality of crystalline silicon cells, the crystalline silicon power generation unit has a visible copper strip, and the surface of the visible copper strip is the same as the color of the crystalline silicon cells.