CN114171436A - Control device for temperature of cleaning liquid in wafer cleaning equipment and wafer cleaning equipment - Google Patents

Control device for temperature of cleaning liquid in wafer cleaning equipment and wafer cleaning equipment Download PDF

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Publication number
CN114171436A
CN114171436A CN202111445138.9A CN202111445138A CN114171436A CN 114171436 A CN114171436 A CN 114171436A CN 202111445138 A CN202111445138 A CN 202111445138A CN 114171436 A CN114171436 A CN 114171436A
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CN
China
Prior art keywords
temperature
semiconductor
sheet
polarity
piece
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CN202111445138.9A
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Chinese (zh)
Inventor
陈海祥
张明
南建辉
杨斌
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to CN202111445138.9A priority Critical patent/CN114171436A/en
Publication of CN114171436A publication Critical patent/CN114171436A/en
Priority to TW111143739A priority patent/TWI830499B/en
Priority to PCT/CN2022/132194 priority patent/WO2023098475A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/007—Heating the liquid

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

The embodiment of the application discloses controlling means and wafer cleaning equipment of cleaning solution temperature among wafer cleaning equipment for temperature control is not nimble enough, accurate when solving control cleaning solution temperature among the prior art, and leads to the problem that protective housing heated deformation because of the high heating temperature of cleaning solution easily. The device includes: the refrigerator comprises a refrigerating piece module, a control module and a first temperature measuring device; the refrigeration piece module sets up on the outer wall of washing tank, current temperature and target temperature based on the washing liquid in the washing tank through control module, control refrigeration piece module in a flexible way, thereby realize the nimble switching of intensification heating and cooling function, and then control the temperature of washing liquid in a flexible way, and because the semiconductor refrigeration piece in the refrigeration piece module is in during operating condition, can produce certain difference in temperature between first lamellar body and the second lamellar body, can avoid leading to the protecting sheathing of washing tank to be heated and warp because of the high heating temperature of washing liquid, play the effect of cooling protection to protecting sheathing.

Description

Control device for temperature of cleaning liquid in wafer cleaning equipment and wafer cleaning equipment
Technical Field
The application relates to the technical field of semiconductors, especially, relate to a controlling means and wafer cleaning equipment of cleaning solution temperature among wafer cleaning equipment.
Background
Wafer cleaning equipment mainly comprises single-wafer semiconductor cleaning equipment and groove type semiconductor cleaning equipment for batch cleaning, wherein the groove type semiconductor cleaning equipment is high in throughput and high in productivity, so that the groove type semiconductor cleaning equipment can be widely applied.
In the related art, when the temperature of the chemical agent in the cleaning tank is controlled, a heating body or a heating body with a radiation heating function is required to be adhered to the outer surface of the cleaning tank to form the cleaning tank with a heating function; however, this scheme is not good the temperature of accuse heating member, and easy because of the heating member high temperature to lead to the heating temperature of washing liquid too high, and then lead to the problem that the protective housing in the washing tank outside is heated deformation.
Disclosure of Invention
The purpose of the embodiment of the application is to provide a control device for temperature of cleaning solution in wafer cleaning equipment and wafer cleaning equipment, which are used for solving the problems that in the prior art, temperature control is not flexible and accurate enough when the temperature of the cleaning solution in the wafer cleaning equipment is controlled, and the heating temperature of the cleaning solution is too high, so that the protective shell outside the cleaning tank is easily deformed due to heating.
In order to solve the above technical problem, the embodiment of the present application is implemented as follows:
in a first aspect, an embodiment of the present application provides a device for controlling temperature of a cleaning liquid in a wafer cleaning apparatus, where the device includes: the refrigerator comprises a refrigerating piece module, a control module and a first temperature measuring device; wherein the content of the first and second substances,
the plurality of refrigerating piece modules are attached to the outer wall of a cleaning tank of the wafer cleaning equipment, each refrigerating piece module comprises at least two semiconductor refrigerating pieces which are sequentially in heat conduction connection, and each semiconductor refrigerating piece comprises a first piece body and a second piece body; the first sheet body and the second sheet body are respectively connected with the control module;
the first temperature measuring device is used for measuring the current temperature of the cleaning liquid in the cleaning tank and transmitting the current temperature to the control module;
the control module is used for controlling a first polarity applied to the first sheet body in the semiconductor refrigeration sheets, a second polarity applied to the second sheet body in the semiconductor refrigeration sheets and the applied power between the first sheet body and the second sheet body according to the current temperature and the target temperature of the cleaning liquid.
In a second aspect, an embodiment of the present application provides a wafer cleaning apparatus, including: a cleaning tank and a control device for the temperature of the cleaning liquid in the wafer cleaning equipment according to the first aspect.
By adopting the technical scheme of the embodiment of the application, the refrigeration piece module is arranged on the outer wall of the cleaning tank, and then the temperature of the cleaning liquid in the cleaning tank is flexibly controlled by controlling the electrode polarities of the first piece body and the second piece body applied to the semiconductor refrigeration piece and the power applied between the first piece body and the second piece body based on the target temperature of the current temperature of the cleaning liquid in the cleaning tank through the control module, so that the heating effect of the cleaning liquid can be achieved, the cleaning liquid can be reduced from high temperature to low temperature, the flexible switching of the heating and cooling functions can be achieved, and the temperature control can be more accurate; and owing to be in under operating condition's the circumstances at the semiconductor refrigeration piece, can produce certain difference in temperature between first lamellar body and the second lamellar body, can play the effect of cooling down the protection to the protecting sheathing of washing tank like this to reach and prevent to lead to protecting sheathing to be heated the problem of deformation because of the high heating temperature of the washing liquid in the washing tank.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without any creative effort.
Fig. 1 is a first specific structural diagram of a device for controlling temperature of a cleaning liquid in a wafer cleaning apparatus according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram illustrating a second specific structure of a device for controlling temperature of a cleaning liquid in a wafer cleaning apparatus according to an embodiment of the present disclosure;
fig. 3 is a third specific structural diagram of a device for controlling temperature of a cleaning liquid in a wafer cleaning apparatus according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram illustrating a fourth embodiment of a device for controlling temperature of a cleaning solution in a wafer cleaning apparatus according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram illustrating a fifth embodiment of a device for controlling temperature of a cleaning solution in a wafer cleaning apparatus according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram illustrating a sixth specific structure of a device for controlling temperature of cleaning liquid in a wafer cleaning apparatus according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of a wafer cleaning apparatus according to an embodiment of the present application.
Detailed Description
The embodiment of the application provides a controlling means and wafer cleaning equipment of cleaning solution temperature among wafer cleaning equipment for temperature control is not nimble enough, accurate when solving the cleaning solution temperature among the control wafer cleaning equipment among the prior art, and leads to the protective housing of washing tank outside to be heated the problem of deformation because of the high heating temperature of cleaning solution easily.
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 1 is a schematic structural diagram of a control device for controlling temperature of cleaning liquid in a wafer cleaning apparatus according to an embodiment of the present application, as shown in fig. 1, the control device includes: the refrigerator comprises a refrigerating piece module 101, a control module 102 and a first temperature measuring device 103; wherein the content of the first and second substances,
the plurality of refrigerating piece modules 101 are attached to the outer wall of a cleaning tank 20 of the wafer cleaning equipment, each refrigerating piece module 101 comprises at least two semiconductor refrigerating pieces which are sequentially in heat conduction connection, and each semiconductor refrigerating piece comprises a first piece body and a second piece body; the first sheet body and the second sheet body are respectively connected with the control module 102; wherein, in order to simplify the concrete structure of refrigeration piece module 101, only it includes the condition of two semiconductor refrigeration pieces (first semiconductor refrigeration piece and second semiconductor refrigeration piece) to have illustrated refrigeration piece module 101 in fig. 1, and do not constitute the restriction to the concrete structure of refrigeration piece module 101, to the condition that refrigeration piece module 101 includes three semiconductor refrigeration pieces, in proper order in the second semiconductor refrigeration piece the outside of second lamellar body set up the third semiconductor refrigeration piece can, analogize in proper order, no longer describe herein.
The first temperature measuring device 103 is configured to measure a current temperature of the cleaning solution in the cleaning tank 20, and transmit the current temperature to the control module 102;
the control module 102 is configured to control a first polarity applied to a first sheet of the semiconductor chilling plates, a second polarity applied to a second sheet of the semiconductor chilling plates, and a power applied between the first sheet and the second sheet according to a current temperature and a target temperature of a cleaning liquid in the wafer cleaning apparatus.
Wherein, each semiconductor refrigeration piece can be a thermocouple pair formed by connecting two different semiconductors, one of the semiconductors (i.e. the first piece or the second piece) is an anode of the semiconductor refrigeration piece, the other semiconductor (i.e. the second piece or the first piece) is a cathode of the semiconductor refrigeration piece, when a voltage is applied between the anode and the cathode of the semiconductor refrigeration piece, a certain junction temperature difference can be generated between the two semiconductors, generally speaking, the junction temperature difference can be about 60 ℃ to 70 ℃, so that one of the semiconductors is changed into a hot surface, the other semiconductor is changed into a cold surface, under normal conditions, when a positive voltage is applied to the anode of the semiconductor refrigeration piece, the semiconductor corresponding to the anode is the hot surface of the semiconductor refrigeration piece (i.e. when a positive voltage is applied to the anode of the semiconductor refrigeration piece, the semiconductor corresponding to the anode is heated), when a negative voltage is applied to the cathode of the semiconductor refrigeration piece, the semiconductor corresponding to the negative electrode is the cold surface of the semiconductor refrigerating sheet (namely, the negative voltage is applied to the negative electrode of the semiconductor refrigerating sheet, so that the semiconductor corresponding to the negative electrode can be refrigerated); when the voltage applied to the positive electrode of the semiconductor cooling piece is changed from positive voltage to negative voltage, the semiconductor corresponding to the positive electrode is changed from a hot surface to a cold surface (even if the semiconductor corresponding to the positive electrode is changed from heating to cooling), when the voltage applied to the negative electrode of the semiconductor cooling piece is changed from negative voltage to positive voltage, the semiconductor corresponding to the negative electrode is changed from the cold surface to the hot surface (namely, the semiconductor corresponding to the negative electrode is changed from cooling to heating), namely, when the polarity of the voltage applied between the two semiconductors in the semiconductor cooling piece is switched, the hot surface of the semiconductor cooling piece is changed into the cold surface, and the cold surface of the semiconductor cooling piece is changed into the hot surface.
In specific implementation, two different semiconductors contained in each semiconductor refrigeration piece are respectively a first piece and a second piece, wherein the first piece corresponds to the anode of the semiconductor refrigeration piece, and the second piece corresponds to the cathode of the semiconductor refrigeration piece; when positive voltage is applied to the first sheet body of the semiconductor refrigeration sheet, the first sheet body can become a hot surface to generate heat, and when negative voltage is applied to the second sheet body of the semiconductor refrigeration sheet, the second sheet body can become a cold surface to refrigerate; further, the polarity of the power applied between the first plate and the second plate of the semiconductor chilling plate can be switched by the control module 102, that is, the control module 102 controls the first polarity applied to the first plate of the semiconductor chilling plate and the second polarity applied to the second plate of the semiconductor chilling plate, when the polarity of the power applied between the first plate and the second plate of the semiconductor chilling plate is switched, the control module controls the first polarity applied to the first plate of the semiconductor chilling plate to be changed from positive voltage to negative voltage (that is, the voltage applied to the first plate of the semiconductor chilling plate is changed from positive voltage to negative voltage), the first plate can be changed from hot surface to cold surface, so as to realize the effect of cooling the cleaning solution in the cleaning tank 20, and the control module controls the second polarity applied to the second plate of the semiconductor chilling plate to be changed from negative voltage to positive voltage (that the voltage applied to the second plate of the semiconductor chilling plate is changed from negative voltage to positive voltage) In the meantime, the second sheet body can be changed from a cold surface to a hot surface, thereby achieving an effect of raising the temperature of the cleaning solution in the cleaning tank 20.
By adopting the technical scheme of the embodiment of the application, the refrigeration piece module 101 is arranged on the outer wall of the cleaning tank 20, and then the temperature of the cleaning liquid in the cleaning tank 20 is flexibly controlled by controlling the electrode polarities of the first piece body and the second piece body of the semiconductor refrigeration piece and the power applied between the first piece body and the second piece body through the control module 102 based on the target temperature of the current temperature of the cleaning liquid in the cleaning tank 20, so that the heating effect of the cleaning liquid can be achieved, the cleaning liquid can be reduced from high temperature to low temperature, the flexible switching of the heating and cooling functions can be achieved, and the temperature control can be more accurate; and owing to be in under operating condition's the circumstances at the semiconductor refrigeration piece, can produce certain difference in temperature between first lamellar body and the second lamellar body, can play the effect of cooling down the protection to the protecting sheathing of washing tank like this to reach and prevent to lead to protecting sheathing to be heated the problem of deformation because of the high heating temperature of the washing liquid in the washing tank.
Further, considering that the area of the outer wall of the cleaning tank 20 of the wafer cleaning apparatus may be relatively large and limited by the size of each cooling plate module 101, it may be necessary to provide a plurality of cooling plate modules 101 on the outer wall of the cleaning tank 20 to cover the entire outer wall of the cleaning tank 20, and based on this, the plurality of cooling plate modules 101 are arranged on the outer wall of the cleaning tank 20 of the wafer cleaning apparatus in an array.
Specifically, the number of the refrigeration piece modules 101 is multiple; each refrigerating sheet module 101 is arranged in different outer wall areas of the cleaning tank 20; the first semiconductor refrigeration pieces in the refrigeration piece modules 101 are connected in parallel and then connected with the control module 102, and the second semiconductor refrigeration pieces in the refrigeration piece modules 101 are connected in parallel and then connected with the control module 102.
Specifically, each of the refrigeration piece modules 101 may be regarded as a whole, and still taking the case that the refrigeration piece module 101 includes two semiconductor refrigeration pieces as an example, for example, the first semiconductor refrigeration piece and the second semiconductor refrigeration piece jointly form one refrigeration piece module 101, where the first semiconductor refrigeration piece and the second semiconductor refrigeration piece may be semiconductor refrigeration pieces with the same power, or semiconductor refrigeration pieces with different powers, and may be flexibly set according to actual needs; further, a plurality of refrigeration piece modules 101 may be distributed over the outer wall of the cleaning tank 20 in an array distribution manner, wherein a first piece and a second piece of each semiconductor refrigeration piece in the refrigeration piece modules 101 are connected in series and then connected in parallel in respective control modules 102, for example, if there are three refrigeration piece modules 101, two semiconductor refrigeration pieces are provided in each refrigeration piece module 101, as shown in fig. 2, a first semiconductor refrigeration piece in the first refrigeration piece module 101, a first semiconductor refrigeration piece in the second refrigeration piece module 101, and a first semiconductor refrigeration piece in the third refrigeration piece module 101 are connected in parallel and then connected to the control modules 102 together, and a first piece and a second piece of each first semiconductor refrigeration piece are connected in series; and the second semiconductor refrigeration piece in the first refrigeration piece module 101, the second semiconductor refrigeration piece in the second refrigeration piece module 101, and the second semiconductor refrigeration piece in the third refrigeration piece module 101 are connected in parallel and then are connected to the control module 102 together, and the first piece body and the second piece body in each second semiconductor refrigeration piece are connected in series, further, the second piece body in the first semiconductor refrigeration piece in each refrigeration piece module 101 is bonded with the first piece body of the second semiconductor refrigeration piece in each module by a heat conduction bonding agent with good heat conductivity. Wherein, in order to simplify the concrete structure of refrigeration piece module 101, only it all includes the condition of two semiconductor refrigeration pieces (being first semiconductor refrigeration piece and second semiconductor refrigeration piece) to have illustrated in fig. 2 every refrigeration piece module 101, and do not constitute the restriction to the concrete structure of refrigeration piece module 101, all include the condition of at least three semiconductor refrigeration piece to every refrigeration piece module 101, refer to above-mentioned concrete structure that every refrigeration piece module 101 includes two semiconductor refrigeration pieces in fig. 2, each third semiconductor refrigeration piece is connected with control module 102 after parallelly connected in a plurality of refrigeration piece modules 101, analogize in proper order, no longer describe herein.
In specific implementation, the total power required for heating the cleaning solution in the cleaning tank 20 can be calculated according to a preset heating rate, the power required when the cleaning solution in the cleaning tank 20 is heated to a preset maximum temperature (i.e., the maximum value of the target temperature), and the experimentally estimated power loss, and a certain number and specifications of the refrigeration piece modules 101 (e.g., the package size of the refrigeration piece module 101, the power of the refrigeration piece module 101, and the voltage of the refrigeration piece module 101) are designed according to the total power; the actual quantity that also can set up the semiconductor refrigeration piece in refrigeration piece module 101 is greater than the target quantity of theoretical required semiconductor refrigeration piece, follow-up like this can be according to the actual technology demand, the quantity of the semiconductor refrigeration piece that needs to start at present is controlled in a flexible way to can make the controlling means's of washing liquid temperature use scene diversified, so that follow-up can be through increasing the quantity that starts the semiconductor refrigeration piece, satisfy the demand of heating the temperature of washing liquid to higher target temperature.
In the embodiment that the application provides, set up a plurality of refrigeration piece modules 101 through being the array form on the outer wall at washing tank 20, thereby realize that bigger region deploys refrigeration piece module 101 on the outer wall of washing tank 20, and then increase the area of the heating region on the outer wall of washing tank 20, and parallelly connected back access control module 102 with the semiconductor refrigeration piece of co-position in a plurality of refrigeration piece modules 101, so that control module 102 can be to a plurality of refrigeration piece modules 101 single control, thereby realize controlling a plurality of refrigeration piece modules 101 more nimbly, can decide opening or closing of which regional refrigeration piece module 101 on the outer wall of control washing tank 20 according to actual demand, thereby improve the control flexibility ratio of the heating region on the outer wall of washing tank 20.
Further, in order to accurately detect the actual temperature between two adjacent semiconductor chilling plates in the chilling plate module 101, for example, the actual temperature between the second plate body in the first semiconductor chilling plate and the first plate body in the second semiconductor chilling plate is detected, so as to achieve the precise control of the power applied to the semiconductor chilling plate and the polarity of the electrodes applied to the first plate body and the second plate body in the semiconductor chilling plate, therefore, a second temperature measuring device can be added between the two semiconductor chilling plates, so that the control module 102 determines how to control the polarity of the electrodes applied to the first plate body and the second plate body in the semiconductor chilling plate and the power applied between the first plate body and the second plate body based on the actual temperature detected by the second temperature measuring device, thereby not only achieving the more precise control of the temperature of the cleaning solution, but also avoiding the polarity switching of the electrodes of the first plate body and the second plate body in the semiconductor chilling plate, therefore, as shown in fig. 3, the protective shell 104 is further disposed on the outer side of the cleaning tank 20, and a second temperature measuring device 105 is further disposed between at least two semiconductor chilling plates;
the second temperature measuring device 105 is configured to measure an actual temperature of the first sheet of the semiconductor cooling sheet close to the protective casing 104, and transmit the measured actual temperature to the control module 102;
the control module 102 is further configured to determine whether to switch a first polarity applied to a first sheet of the semiconductor cooling fins and a second polarity applied to a second sheet of the semiconductor cooling fins based on the actual temperature and the maximum heatproof temperature of the protective housing 104, and switch the first polarity of the first sheet and the second polarity of the second sheet if the determination result is yes, or adjust the power applied between the first sheet and the second sheet if the determination result is no.
Specifically, the second temperature measuring device 105 may be disposed between any two adjacent semiconductor cooling fins, and the second temperature measuring device 105 detects an actual temperature of the first fin body or the second fin body in the semiconductor cooling fins, so that the control module 102 accurately controls the polarity of the electrodes applied to the first fin body and the second fin body in the semiconductor cooling fins and the power applied between the first fin body and the second fin body based on the actual temperature. In specific implementation, a second temperature measuring device 105 may be disposed between two adjacent semiconductor chilling plates adjacent to the protective housing 104, for example, if the chilling plate module includes two semiconductor chilling plates, the second temperature measuring device 105 is disposed between a first semiconductor chilling plate and the second semiconductor chilling plate, and if the chilling plate module includes three semiconductor chilling plates, and a first semiconductor chilling plate, a second semiconductor chilling plate and a third semiconductor chilling plate which are sequentially connected in a heat-conducting manner are disposed from the outer wall of the cleaning tank to the protective housing 104, the second temperature measuring device 105 is at least required to be disposed between the third semiconductor chilling plate and the second semiconductor chilling plate; specifically, for the case that the second temperature measuring device 105 is disposed between two adjacent semiconductor chilling plates close to the protective casing 104, since the junction temperature difference of each semiconductor chilling plate is known, based on the actual temperature measured by the second temperature measuring device 105 and the junction temperature difference of the semiconductor chilling plates close to the protective casing 104, it can be determined whether the temperature of the second plate body in the semiconductor chilling plates close to the protective casing 104 exceeds the maximum heat-resistant temperature of the protective casing 104, so that the protective casing 104 can be better protected.
Further, considering that when the temperature of the semiconductor chilling plate is too high, if the electrode polarities of the first plate and the second plate in the semiconductor chilling plate are directly switched, the temperature received by the protective casing 104 may be too high, and therefore, the effect of cooling may be achieved by adjusting the power of at least one semiconductor chilling plate, and when the temperature of the first plate in the semiconductor chilling plate adjacent to the protective casing 104 is reduced to a certain temperature, the electrode polarities applied to the first plate and the second plate in the at least one semiconductor chilling plate are switched, so as to ensure that the protective casing 104 is within the allowable temperature range, that is, the maximum heatproof temperature of the protective casing 104 is not exceeded, based on this, the control module 102 is further specifically configured to adjust the power applied between the first plate and the second plate based on the actual temperature when the actual temperature measured by the second temperature measuring device 105 is greater than or equal to the first preset value, until the actual temperature is lower than the first preset value, and when the actual temperature is lower than the first preset value, the first polarity and the second polarity are determined to be switched, that is, when the actual temperature measured by the second temperature measuring device 105 is lower than the first preset value, the first polarity applied to the first sheet body and the second polarity applied to the second sheet body in the semiconductor refrigeration sheet can be switched at the moment;
wherein the first preset value is related to a difference between a maximum heatproof temperature of the protective casing 104 and a junction temperature difference of the semiconductor chilling plates close to the protective casing 104. The junction temperature difference of the semiconductor chilling plates may be related to the power applied to the semiconductor chilling plates, so that the junction temperature difference of the semiconductor chilling plates may be determined based on the current power applied to the semiconductor chilling plates, that is, the first preset value may be dynamically changed; in addition, in consideration of the fact that only part of the semiconductor refrigerating pieces may be started in the actual use process, the junction temperature differences of the semiconductor refrigerating pieces with the first preset value are determined to be the junction temperature differences of the semiconductor refrigerating pieces in the working state.
Specifically, taking the example that one of the refrigeration chip modules 101 illustrated in fig. 1 includes the first semiconductor refrigeration chip and the second semiconductor refrigeration chip, the control device for controlling the temperature of the cleaning liquid in the wafer cleaning apparatus provided in the embodiment of the present application is explained, first, in order to address the situation that the current temperature measured by the first temperature measurement device 103 is the room temperature, the cleaning liquid in the cleaning tank 20 needs to be heated, that is, the current temperature is lower than the target temperature, and the heating state is the initial heating state, in the specific implementation, the control module 102 controls the first polarity of the first chip body in the first semiconductor refrigeration chip to be positive, and controls the second polarity of the second chip body in the first semiconductor refrigeration chip to be negative; the first polarity of the first sheet body in the second semiconductor refrigeration sheet is controlled to be positive, the second polarity of the second sheet body in the second semiconductor refrigeration sheet is controlled to be negative, the power applied to the first semiconductor refrigeration sheet and the power applied to the second semiconductor refrigeration sheet are adjusted through the control module 102, wherein if the temperature of the first sheet body in the second semiconductor refrigeration sheet is higher than that of the second sheet body in the first semiconductor refrigeration sheet, the temperature of the second sheet body in the first semiconductor refrigeration sheet can be increased in a heat transfer mode, and further the temperature of the first sheet body in the first semiconductor refrigeration sheet is higher through the junction temperature difference of the first semiconductor refrigeration sheet, so that the heating temperature of the cleaning solution is higher.
In specific implementation, which semiconductor refrigeration piece is started can be determined according to actual conditions, for example, if the target temperature is less than the sum of the room temperature and the junction temperature difference of the first semiconductor refrigeration piece, only the first semiconductor refrigeration piece can be started; for another example, if the target temperature is greater than the sum of the room temperature and the junction temperature difference of the first semiconductor chilling plate, the first semiconductor chilling plate and the second semiconductor chilling plate can be started simultaneously.
Further, in order to reduce the temperature of the heated cleaning solution, that is, the current temperature measured by the first temperature measuring device 103 is higher than the target temperature, the cleaning solution may be rapidly reduced by switching the electrode polarities of the first sheet and the second sheet in the first semiconductor refrigeration sheet or the second semiconductor refrigeration sheet and using the cold surface temperature of the switched semiconductor refrigeration sheet, specifically, the electrode polarities of the first sheet and the second sheet in the first semiconductor refrigeration sheet may be controlled by the control module 102 according to the actual situation, or the electrode polarities of the first sheet and the second sheet in the second semiconductor refrigeration sheet may be controlled by the control module 102; meanwhile, considering that when the current temperature of the cleaning solution is too high, the temperature between the first semiconductor chilling plate and the second semiconductor chilling plate (i.e. the actual temperature measured by the second temperature measuring device 105) is also too high, the control module 102 needs to adjust the power applied to the first semiconductor chilling plate and the second semiconductor chilling plate, so as to achieve the effect of cooling the first semiconductor chilling plate and the second semiconductor chilling plate, so that the polarity of the electrode applied to the first semiconductor chilling plate or the second semiconductor chilling plate can be switched when the temperature between the second plate body of the first semiconductor chilling plate and the first plate body of the second semiconductor chilling plate (i.e. the actual temperature measured by the second temperature measuring device 105) is smaller than the first preset value, i.e. the power applied between the first plate body and the second plate body is adjusted based on the actual temperature measured by the second temperature measuring device 105, and the polarity of the electrode applied to the first semiconductor chilling plate or the second semiconductor chilling plate can not be switched until the actual temperature is less than the first preset value.
For example, in the case that the chilling plate module 101 includes three semiconductor chilling plates, a first semiconductor chilling plate, a second semiconductor chilling plate and a third semiconductor chilling plate are sequentially arranged from the outer wall of the cleaning tank to the protective shell 104 in a heat conduction connection manner, and a second temperature measuring device 105 is arranged between the third semiconductor chilling plate and the second semiconductor chilling plate; assuming that the first preset value is the difference between the maximum heat-resistant temperature and the junction temperature difference of the third semiconductor chilling plate, if the actual temperature measured by the second temperature measuring device 105 (i.e. the actual temperature between the second plate body of the second semiconductor chilling plate and the first plate body of the third semiconductor chilling plate) is greater than or equal to the difference between the maximum heat-resistant temperature and the junction temperature difference of the third semiconductor chilling plate, and the target temperature is less than the difference between the maximum heat-resistant temperature and the junction temperature difference of the third semiconductor chilling plate, the power applied to the first semiconductor chilling plate and the second semiconductor chilling plate and the size of the third semiconductor chilling plate need to be adjusted, when the actual temperature between the second sheet body of the second semiconductor refrigeration sheet and the first sheet body of the third semiconductor refrigeration sheet is less than the difference (namely the first preset value) between the maximum heat-resisting temperature and the junction temperature difference of the third semiconductor refrigeration sheet, the polarity of the first semiconductor refrigeration piece, the second semiconductor refrigeration piece or the third refrigeration piece can be switched.
For another example, in case that the cooling plate module 101 includes two semiconductor cooling plates, assuming that the first preset value is a difference between a maximum heat-resistant temperature and a junction temperature difference of the second semiconductor cooling plate, if an actual temperature (i.e. an actual temperature between the second plate of the first semiconductor cooling plate and the first plate of the second semiconductor cooling plate) measured by the second temperature measuring device 105 is greater than or equal to a difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor cooling plate, and a target temperature is less than the difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor cooling plate, it is necessary to adjust the power applied to the first semiconductor cooling plate and the second semiconductor cooling plate, and when the actual temperature between the second plate of the first semiconductor cooling plate and the first plate of the second semiconductor cooling plate is less than the difference between the maximum heat-resistant temperature and the junction temperature difference of the second semiconductor cooling plate (i.e. the first preset value), the polarity of the first semiconductor refrigeration piece or the second refrigeration piece can be switched.
Further, for the situation that the temperature of the cleaning fluid after being cooled needs to be heated again, the polarity applied to the first semiconductor chilling plate or the polarity of the second semiconductor chilling plate can be directly switched, for example, if the polarity of the first plate body of the first semiconductor chilling plate in the chilling plate module is positive, the polarity of the second plate body is negative, the polarity of the first plate body of the second semiconductor chilling plate is negative, and the polarity of the second plate body is positive, the polarity of the second semiconductor chilling plate is directly switched, so that the polarity of the first plate body of the second semiconductor chilling plate is changed from negative to positive (i.e. the cold surface is changed into the hot surface), and then the temperature of the first plate body in the second semiconductor chilling plate is raised by adjusting the power applied to the second semiconductor chilling plate, and then the temperature of the second plate body in the first semiconductor chilling plate is raised by means of heat transfer, and then through the junction temperature difference of first semiconductor refrigeration piece, promote the temperature of first lamellar body in the first semiconductor refrigeration piece, and then the washing liquid in the heating washing groove.
It should be noted that, for the case that the chilling plate module includes at least three semiconductor chilling plates, the above specific control process may be referred to, and details are not described herein again.
Wherein, mainly be the control to the washing liquid of wafer when considering to control the washing liquid temperature in the washing tank 20 and heat up or cool down, and when heating the washing liquid, need ensure that the protecting sheathing 104 of washing tank 20 can not lead to softening and warping because of the heating temperature is too high, under the general condition, start the temperature regulation demand that two semiconductor refrigeration pieces can satisfy the washing liquid of wafer, therefore, use refrigeration piece module 101 to include two semiconductor refrigeration pieces as an example, also can include at least three semiconductor refrigeration piece in the refrigeration piece module 101 of course, be less than certain numerical value's application scene to the target temperature of washing liquid, can only start two semiconductor refrigeration pieces, two semiconductor refrigeration pieces of control promptly are in operating condition, and is concrete, two at least semiconductor refrigeration pieces include in the above-mentioned refrigeration piece module 101: the first semiconductor refrigerating piece and the second semiconductor refrigerating piece;
wherein, the first lamellar body in the first semiconductor refrigeration piece sets up on the outer wall of washing tank 20, the second lamellar body in the first semiconductor refrigeration piece and the first lamellar body heat-conduction connection in the first semiconductor refrigeration piece, the first lamellar body in the second semiconductor refrigeration piece and the second lamellar body heat-conduction connection in the first semiconductor refrigeration piece, the second lamellar body in the second semiconductor refrigeration piece and the first lamellar body heat-conduction connection in the second semiconductor refrigeration piece just are close to protective housing 104.
Specifically, when the cleaning liquid in the cleaning tank 20 is controlled to be heated (i.e. the current temperature measured by the first temperature measuring device 103 is lower than the target temperature), a positive voltage may be applied to the first semiconductor chilling plate, a negative voltage may be applied to the second semiconductor chilling plate, so that the first semiconductor chilling plate is heated to heat the cleaning liquid in the cleaning tank 20 by the junction temperature difference between the first semiconductor chilling plate and the second semiconductor chilling plate, and the first semiconductor chilling plate is heated to heat the first semiconductor chilling plate, because the second sheet body of the first semiconductor refrigeration sheet is in heat conduction connection with the first sheet body of the second semiconductor refrigeration sheet, the heat of the first sheet body of the second semiconductor refrigeration sheet can be transferred to the second sheet body of the first semiconductor refrigeration sheet in a heat transfer mode so as to raise the temperature of the second sheet body of the first semiconductor refrigeration sheet (namely, the second sheet body of the first semiconductor refrigeration sheet is heated by raising the temperature of the first sheet body of the second semiconductor refrigeration sheet), and further, the first sheet body of the first semiconductor refrigeration sheet arranged on the outer wall of the cleaning tank 20 can reach higher temperature through the junction temperature difference generated between the first sheet body and the second sheet body of the first semiconductor refrigeration sheet, so that the cleaning liquid in the cleaning tank 20 reaches higher temperature, and the temperature of the first sheet body of the first semiconductor refrigeration sheet is the sum of the temperature of the first sheet body of the second semiconductor refrigeration sheet and the junction temperature difference of the first semiconductor refrigeration sheet at the moment, and the highest temperature of the first sheet body of the first semiconductor refrigerating sheet can reach the sum of the temperature of the second sheet body in the second semiconductor refrigerating sheet and the maximum junction temperature difference of the first semiconductor refrigerating sheet.
Meanwhile, because the second sheet body of the second semiconductor refrigeration sheet is a cold surface at this time, the temperature of the second sheet body of the second semiconductor refrigeration sheet close to the protective shell 104 is far lower than the temperature of the first sheet body of the first semiconductor refrigeration sheet, and the temperature difference between the first sheet body of the first semiconductor refrigeration sheet and the second sheet body of the second semiconductor refrigeration sheet is the sum of the junction temperature difference of the first semiconductor refrigeration sheet and the junction temperature difference of the second semiconductor refrigeration sheet, for example, if the junction temperature difference of the first semiconductor refrigeration sheet is 70 degrees, the junction temperature difference of the second semiconductor refrigeration sheet is 60 degrees, when the temperature of the first sheet body of the first semiconductor refrigeration sheet reaches 140 degrees, the temperature of the second sheet body of the first semiconductor refrigeration sheet is 70 degrees, at this time, the temperature of the first sheet body of the second semiconductor refrigeration sheet needs to be controlled to be about 70 degrees, and when the temperature of the first sheet body of the second semiconductor refrigeration sheet is controlled to be 70 degrees, since the junction temperature difference of the second semiconductor chilling plates is 60 °, the temperature of the second plate body of the second semiconductor chilling plates is maintained at about 10 ℃, so that even if the cleaning solution in the cleaning tank 20 needs to be heated to a higher temperature (i.e. the temperature of the first plate body of the first semiconductor chilling plate is higher), the protective housing 104 of the cleaning tank 20 can be maintained at a lower temperature (i.e. the temperature of the second plate body of the second semiconductor chilling plate is lower) by using the sum of the junction temperature differences of the two semiconductor chilling plates.
Specifically, the polarity and the power of the electrode applied to the semiconductor chilling plate in the chilling plate module 101 are controlled by the control module 102, so that the cleaning liquid in the cleaning tank 20 can be heated and controlled, and the cleaning liquid in the cleaning tank 20 can be cooled and controlled (namely, the current temperature measured by the first temperature measuring device 103 is higher than the target temperature), namely, the heated cleaning liquid is cooled and controlled. In specific implementation, the control module 102 may control the power applied between the first plate and the second plate in the first semiconductor refrigeration plate and the power applied between the first plate and the second plate in the second semiconductor refrigeration plate, so as to reduce the temperature of the first plate in the first semiconductor refrigeration plate and the temperature of the first plate in the second semiconductor refrigeration plate, and then switch the polarity of the power applied between the first plate and the second plate of the second semiconductor refrigeration plate, so as to change the voltage applied on the first plate of the second semiconductor refrigeration plate from positive voltage to negative voltage, that is, the first plate of the second semiconductor refrigeration plate changes from hot surface to cold surface, and further the heat of the second plate in the first semiconductor refrigeration plate is transferred to the first plate of the second semiconductor refrigeration plate by means of heat transfer, that is, the first plate of the second semiconductor refrigeration plate cools the second plate in the first semiconductor refrigeration plate, and then draw down the temperature of first lamellar body in the first semiconductor refrigeration piece through the junction temperature difference of first semiconductor refrigeration piece, and then realize carrying out the refrigerated effect to the washing liquid in washing tank 20, wherein, owing to utilized the mode of heat transfer to realize the control to the temperature, need not to rely on power control temperature completely, consequently can reach the purpose that reduces the consumption, and owing to utilize the mode of heat transfer and power simultaneously, can realize controllable temperature control, and then make temperature control more accurate.
In specific implementation, although the first sheet of the first semiconductor chilling plate is disposed on the outer wall of the cleaning tank 20 and can directly heat the cleaning solution in the cleaning tank 20, the temperature of the first sheet of the first semiconductor chilling plate is often not directly equal to the temperature of the cleaning solution in the cleaning tank 20 due to the influence of factors such as the change of the specific heat capacity of the cleaning solution and the environmental change during the heating process, so as to ensure the accuracy of the temperature control, the first temperature measuring device 103 can be used to measure the current temperature of the cleaning solution in the cleaning tank 20 in real time and transmit the current temperature to the control module 102, so that the control module 102 can control the first polarity applied to the first sheet of the semiconductor chilling plate, the second polarity applied to the second sheet of the semiconductor chilling plate, and the temperature of the cleaning solution according to the current temperature and the target temperature of the cleaning solution, And the power applied between the first sheet body and the second sheet body, so as to realize the accurate control of the temperature of the cleaning liquid in the cleaning tank 20.
Further, considering that the junction temperature difference and heat transfer principle of the second semiconductor chilling plate can be utilized, the second sheet body in the first semiconductor refrigeration sheet is cooled to achieve the purpose of reducing power consumption, and meanwhile, when the temperature of the semiconductor refrigeration sheet is overhigh, if the polarities of the electrodes of the first and second semiconductor cooling fins are directly switched, the problem of deformation due to too high temperature received by the protective housing 104 may be caused, and based on this, the control module 102 is further specifically configured to, in a case that the actual temperature measured by the second temperature measuring device 105 is greater than or equal to the difference between the maximum heatproof temperature of the protective casing 104 and the junction temperature difference of the second semiconductor chilling plate, adjusting the power applied to the first semiconductor chilling plate and the power applied to the second semiconductor chilling plate based on the actual temperature measured by the second temperature measuring device 105;
under the condition that the actual temperature measured by the second temperature measuring device 105 is smaller than the difference value between the maximum heat-resisting temperature of the protective shell 104 and the junction temperature difference of the second semiconductor refrigeration piece, switching a first polarity applied to the first piece body of the second semiconductor refrigeration piece and a second polarity applied to the second piece body so as to reduce the temperature of the second piece body of the first semiconductor refrigeration piece in a heat transfer mode;
and under the condition that the current temperature of the cleaning liquid reaches a second preset value, adjusting the power applied between the first sheet body and the second sheet body in the first semiconductor refrigeration sheet so as to enable the current temperature of the cleaning liquid to reach the target temperature.
Specifically, for the case that each of the chilling plate modules 101 includes two semiconductor chilling plates, that is, the chilling plate module 101 includes a first semiconductor chilling plate and a second semiconductor chilling plate, the first preset value is a difference between a maximum heat-resistant temperature of the protective housing 104 and a junction temperature difference of the second semiconductor chilling plate; during specific implementation, the refrigerating sheet module 101 only comprises the first semiconductor refrigerating sheet and the second semiconductor refrigerating sheet, or the refrigerating sheet module 101 not only comprises the first semiconductor refrigerating sheet and the second semiconductor refrigerating sheet, but also comprises the third semiconductor refrigerating sheet and the like, and only two semiconductor refrigerating sheets need to be started according to actual requirements; specifically, if the actual temperature measured by the second temperature measuring device 105 between the first semiconductor chilling plate and the second semiconductor chilling plate is greater than or equal to the difference between the maximum heat-resistant temperature of the protective casing 104 and the junction temperature difference of the second semiconductor chilling plate, the power applied to the first semiconductor chilling plate and the power applied to the second semiconductor chilling plate need to be adjusted first, so that the temperature between the first semiconductor chilling plate and the second semiconductor chilling plate reaches the allowable temperature range, that is, the actual temperature measured by the second temperature measuring device 105 is less than the difference between the maximum heat-resistant temperature of the protective casing 104 and the junction temperature difference of the second semiconductor chilling plate, so as to switch the polarity of the electrode applied to the second semiconductor chilling plate, that is, under the condition that the polarity of the second semiconductor chilling plate is allowed to be switched, the first polarity applied to the first plate body in the second semiconductor chilling plate and the second polarity applied to the second plate body are switched, the first sheet body in the second semiconductor refrigeration sheet is changed from a hot surface to a cold surface, the temperature of the second sheet body in the first semiconductor refrigeration sheet is reduced in a heat transfer mode, and the effect of reducing power consumption can be achieved.
Specifically, after the polarity of the electrode applied to the second semiconductor chilling plate is switched, the second plate body in the second semiconductor chilling plate shown in fig. 1 is changed from a cold surface to a hot surface, and the first plate body in the second semiconductor chilling plate is changed from a hot surface to a cold surface, so that the temperature of the first plate body in the second semiconductor chilling plate is reduced, thereby reducing the temperature of the second plate body in the first semiconductor chilling plate in a heat transfer manner, and further reducing the temperature of the first plate body in the first semiconductor chilling plate by the junction temperature difference of the first semiconductor chilling plate, so that the current temperature of the cleaning solution reaches a second preset value, wherein the second preset value may not be fixed, for example, the second preset value may be the current temperature of the cleaning solution after a preset time period since the polarity of the electrode of the second semiconductor chilling plate is switched, that the preset time period elapses since the polarity of the electrode of the second semiconductor chilling plate is switched, determining that the current temperature reaches a second preset value; the second preset value may also be fixed, for example, a temperature threshold is preset, and the current temperature is compared with the temperature threshold to determine whether the current temperature reaches the second preset value; further, if the second preset value is greater than the target temperature, the power applied between the first sheet body and the second sheet body in the first semiconductor refrigeration sheet needs to be reduced, so that the current temperature of the cleaning fluid reaches the target temperature; if the second preset value is smaller than the target temperature, the power applied between the first sheet body and the second sheet body in the first semiconductor refrigeration sheet needs to be increased so that the current temperature of the cleaning liquid reaches the target temperature, namely, after heat transfer, if the current temperature of the cleaning liquid does not reach the target temperature, the power applied between the first sheet body and the second sheet body in the first semiconductor refrigeration sheet can be adjusted so that the current temperature of the cleaning liquid reaches the target temperature.
Further, after the cleaning solution in the cleaning tank 20 is cooled, the cleaning solution may be heated on the basis of cooling, specifically, the control module 102 switches the first polarity applied to the first plate of the second semiconductor chilling plate and the second polarity applied to the second plate, so that the first plate of the second semiconductor chilling plate raises the temperature of the second plate of the first semiconductor chilling plate in a heat transfer manner (i.e. the first plate of the second semiconductor chilling plate changes from a cold surface to a hot surface), and further the temperature of the first plate of the second semiconductor chilling plate is raised by adjusting the power applied between the first plate of the second semiconductor chilling plate and the second chilling plate, so that the temperature of the first plate of the second semiconductor chilling plate is higher than the temperature of the second plate of the first semiconductor chilling plate, i.e. the temperature of the second plate of the first semiconductor chilling plate is raised in a heat transfer manner, and then the temperature of the first sheet body in the first semiconductor refrigeration piece is higher through the junction temperature difference of the first semiconductor refrigeration piece, and then the temperature of the cleaning solution is raised, wherein, the temperature of the cleaning solution in the cleaning tank 20 is raised through a heat transfer mode, so that the overall power consumption of the control device can be reduced.
In the embodiment provided by the application, the power applied to the first semiconductor chilling plate and the second semiconductor chilling plate is adjusted to reduce the temperature between the first semiconductor chilling plate and the second semiconductor chilling plate to the range allowing the switching of the electrode polarity of the second semiconductor chilling plate, and then the electrode polarity applied to the second semiconductor chilling plate is switched, so that the temperature of the first plate body in the first semiconductor chilling plate can be reduced through the heat transfer manner, the cleaning solution is cooled, the temperature of the protective shell 104 can be within the allowed temperature range, if the temperature of the cleaning solution does not reach the target temperature after the cleaning solution is heated or cooled through the heat transfer manner, the power applied between the first plate body and the second plate body in the first semiconductor chilling plate is continuously adjusted, and the current temperature of the cleaning solution reaches the target temperature, the electrode polarity applied to the semiconductor refrigerating sheet can be switched during heating, meanwhile, a cooling effect is generated, and the temperature reduction rate can be accurately controlled by adjusting the voltage (the power adjusting circuit), so that the temperature control precision is higher, and the heat transfer is utilized to improve the energy efficiency.
It should be noted that, the chilling plate module 101 may include two semiconductor chilling plates or a plurality of semiconductor chilling plates, and in specific implementation, the chilling plate module 101 may be set to include a plurality of semiconductor chilling plates, and then according to actual process requirements (i.e. combining the maximum value of the target temperature of the cleaning solution and the maximum heatproof temperature of the protective shell 104), it is determined to start two semiconductor chilling plates or start at least three semiconductor chilling plates (i.e. using the junction temperature difference of two or at least three semiconductor chilling plates to reduce the temperature of the second plate body of the semiconductor chilling plates close to the protective shell 104, so as to ensure that the protective shell 104 can not exceed the maximum heatproof temperature when the current temperature of the cleaning solution reaches the maximum value of the target temperature), wherein the number (i.e. the target number) of the semiconductor chilling plates that need to be started is positively correlated with the maximum value of the target temperature, the temperature of the protective casing 104 is inversely related to the maximum heat-resistant temperature, so that the use scene of the control device of the temperature of the cleaning liquid can be diversified; specifically, the control module 102 is specifically configured to determine a target number of semiconductor chilling plates that need to be started based on a maximum value of a target temperature of the cleaning solution and a maximum heat-resistant temperature of the protective housing 104, determine the target number of semiconductor chilling plates close to the outer wall of the cleaning tank 20 as the target semiconductor chilling plates (for example, the semiconductor chilling plates 1, the semiconductor chilling plates 2, and the semiconductor chilling plates 3 in the chilling plate module 101 are sequentially arranged from the outer wall of the cleaning tank 20 to the protective housing 104, and if the target number is determined to be 2, the semiconductor chilling plates 1 and the semiconductor chilling plates 2 are controlled to be in an operating state), and then control a first polarity applied to a first plate body of the target semiconductor chilling plates, a second polarity applied to a second plate body of the target semiconductor chilling plates, a temperature of the cleaning solution in the wafer cleaning device according to a current temperature and a target temperature of the cleaning solution in the wafer cleaning device, And an amount of power applied between the first sheet and the second sheet; for the specific implementation process of controlling the polarity and the power applied to the electrodes of the first sheet and the second sheet of the at least three semiconductor cooling sheets, reference may be made to the specific control process for the two semiconductor cooling sheets, which is not described herein again.
Furthermore, considering that the second sheet body of the first semiconductor refrigeration sheet and the first sheet body of the second semiconductor refrigeration sheet need to transfer heat in a heat transfer manner, and when the heat transfer tends to be stable, the second sheet body of the first semiconductor refrigeration sheet and the first sheet body of the second semiconductor refrigeration sheet need to be kept at the same temperature, so as to enable the temperature control of the semiconductor refrigeration sheets to be more accurate, therefore, in order to improve the heat conduction effect of the first sheet body and the second sheet body which are in heat conduction connection in each semiconductor refrigeration sheet, and improve the heat conduction effect between the first sheet body of one semiconductor refrigeration sheet and the second sheet body of the other semiconductor refrigeration sheet in two adjacent semiconductor refrigeration sheets which are in heat conduction connection, the first sheet body and the second sheet body in each semiconductor refrigeration sheet are bonded through a heat conduction adhesive, and the first semiconductor refrigeration sheet and the second semiconductor refrigeration sheet are bonded through a heat conduction adhesive, namely, the second sheet body in the first semiconductor refrigeration sheet is bonded with the first sheet body in the second semiconductor refrigeration sheet through the heat-conducting adhesive.
In this embodiment, bond the second lamellar body in with the first semiconductor refrigeration piece through the good heat conduction adhesive of heat conductivity in the first semiconductor refrigeration piece and the first lamellar body in the second semiconductor refrigeration piece to make the effect of heat transfer better, and then make the temperature control of semiconductor refrigeration piece more accurate.
Further, considering that the polarity of the electrode applied to the semiconductor chilling plates can be switched and the power applied to the semiconductor chilling plates can be adjusted, and then the temperature of the cleaning solution in the cleaning tank 20 can be flexibly controlled, so as to achieve the effect of heating the cleaning solution by raising the temperature or cooling the cleaning solution by lowering the temperature, in order to further improve the flexibility of switching the polarity of the electrode applied to the plurality of semiconductor chilling plates and the flexibility of adjusting the power applied to the plurality of semiconductor chilling plates, based on this, the control module 102 includes: the power supply comprises at least two power supply polarity switching circuits, at least two power regulating circuits and a central control circuit;
the first sheet body of each semiconductor refrigerating sheet is connected with a power supply through a power supply polarity switching circuit and a power regulating circuit; the second sheet body of each semiconductor refrigerating sheet is connected with a power supply through another power supply polarity switching circuit and another power regulating circuit;
the central control circuit is respectively connected with the first temperature measuring device 103, the at least two power polarity switching circuits and the at least two power regulating circuits;
the central control circuit is used for controlling a first polarity applied to the first sheet body and a second polarity applied to the second sheet body through the power polarity switching circuit according to the current temperature and the target temperature of the cleaning liquid, and controlling the power applied between the first sheet body and the second sheet body through the power adjusting circuit.
Specifically, still use refrigeration piece module 101 to include first semiconductor refrigeration piece and second semiconductor refrigeration piece as an example, it is corresponding, first semiconductor refrigeration piece and second semiconductor refrigeration piece in refrigeration piece module 101 are connected with different power polarity switching circuits and different power regulating circuits respectively, and is specific, as shown in fig. 4, above-mentioned control module 102 includes: a first power supply polarity switching circuit 1021, a second power supply polarity switching circuit 1022, a first power adjusting circuit 1023, a second power adjusting circuit 1024, and a center control circuit 1045; the first semiconductor refrigeration piece of the refrigeration piece module 101 is connected with the power supply 107 through a first power polarity switching circuit 1021 and a first power regulation circuit 1023, and the second semiconductor refrigeration piece of the refrigeration piece module 101 is connected with the power supply 107 through a second power polarity switching circuit 1022 and a second power regulation circuit 1024; and the central control circuit 1045 is connected to the first temperature measuring device 103, the first power polarity switching circuit 1021, the second power polarity switching circuit 1022, the first power adjusting circuit 1023, and the second power adjusting circuit 1024, respectively.
Specifically, the central control circuit 1045 may be a circuit having temperature detection, polarity switching control, and power adjustment control functions, and correspondingly, the central control circuit 1045 is configured to receive the current temperature of the cleaning solution measured by the first temperature measuring device 103, control the first power polarity switching circuit 1021 to switch the first polarity applied to the first semiconductor cooling plate and the second polarity applied to the second semiconductor cooling plate based on a difference between the current temperature of the cleaning solution and the target temperature, and calculate a power required to be adjusted by the first power adjustment circuit 1023, so as to adjust the power applied to the first semiconductor cooling plate; and controlling the second power polarity switching circuit 1022 to switch the first polarity applied to the first sheet body and the second polarity applied to the second sheet body in the second semiconductor cooling sheet, and calculating the power magnitude required to be adjusted by the second power adjusting circuit 1024, thereby adjusting the power magnitude applied to the second semiconductor cooling sheet.
Further, if the number of the refrigeration piece modules 101 is multiple, as shown in fig. 5, taking three refrigeration piece modules 101 as an example, a specific circuit structure of the control device is explained, after the first semiconductor refrigeration piece in the first refrigeration piece module 101, the first semiconductor refrigeration piece in the second refrigeration piece module 101, and the first semiconductor refrigeration piece in the third refrigeration piece module 101 are connected in parallel, they are connected to the first power polarity switching circuit 1021 and the first power regulating circuit 1023, and the first piece and the second piece in each first semiconductor refrigeration piece are connected in series; and the second semiconductor refrigeration piece in the first refrigeration piece module 101, the second semiconductor refrigeration piece in the second refrigeration piece module 101, and the second semiconductor refrigeration piece in the third refrigeration piece module 101 are connected in parallel and then are connected to the second power polarity switching circuit 1022 and the second power regulating circuit 1024 together, and the first piece body and the second piece body in each second semiconductor refrigeration piece are connected in series, further, the second piece body in the first semiconductor refrigeration piece in each refrigeration piece module 101 and the first piece body of the second semiconductor refrigeration piece in each module are bonded together by a heat conduction adhesive with good heat conductivity.
In the embodiment that this application provided, to every refrigeration piece module 101, for each semiconductor refrigeration piece in this refrigeration piece module 101 designs solitary power polarity switching circuit and power regulating circuit respectively, can realize the independent control to a plurality of semiconductor refrigeration pieces in refrigeration piece module 101 through central controller, and then can control the temperature of the washing liquid in washing tank 20 in a flexible way, and can realize the nimble switching of intensification heating and cooling function, and then make temperature control more accurate.
Further, in consideration of the temperature of the cleaning liquid in the cleaning tank 20, the control module 102 further includes, in order to improve the stability of the power applied to the semiconductor cooling fins by controlling the power supply 107 to be an ac power supply, in addition to the fact that the power supply is an ac power supply in the normal case, by adjusting the voltage applied between the first fin body and the second fin body of the semiconductor cooling fin to adjust the dc voltage output to the semiconductor cooling fin, and further adjusting the power applied between the first fin body and the second fin body, in consideration of the fact that the power supply is an ac power supply in the normal case: a rectification voltage-stabilizing circuit arranged between the power regulating circuit and the power supply 107;
the rectification voltage stabilizing circuit is used for converting alternating current provided by the power supply 107 to obtain required direct current and transmitting the direct current to the power regulating circuit;
the power regulating circuit is used for regulating the magnitude of the direct current voltage output to the semiconductor refrigeration sheet so as to regulate the magnitude of power applied between the first sheet body and the second sheet body.
Wherein, the rectification voltage stabilizing circuit may include: the transformer, the rectifying circuit and the voltage stabilizing circuit; the power supply 107 may be an ac power supply circuit; specifically, the rectifying and voltage-stabilizing circuit converts the ac power provided by the power supply 107 into the dc power required for heating the cleaning liquid in the cleaning tank 20 (i.e., the dc power required by the semiconductor chilling plates), and transmits the dc power to the power regulating circuit, so that the power regulating circuit regulates the magnitude of the dc voltage output to the semiconductor chilling plates under the control of the central control circuit 1045, and further regulates the magnitude of the power applied between the first plate body and the second plate body in the semiconductor chilling plates.
In the embodiment that this application provided, through set up rectification voltage stabilizing circuit between power conditioning circuit and power supply 107, can be with the required direct current of alternating current conversion semiconductor refrigeration piece that power supply 107 provided to adjust the size of this direct current through power conditioning circuit, with the power size of applying between first lamellar body and the second lamellar body in adjusting the semiconductor refrigeration piece, and then realize the accurate control to semiconductor refrigeration piece temperature.
In a specific embodiment, after the second temperature measuring device is added, the second temperature measuring device may be directly connected to a central control circuit 1045 in the control apparatus, in order to further improve the temperature measurement accuracy of the first temperature measuring device 103 and the second temperature measuring device 104, and improve the control flexibility of the central control circuit 1045 for the plurality of power supply polarity switching circuits and the plurality of power adjusting circuits, as shown in fig. 6, the central control circuit 1045 may include: the first temperature measuring device 103 is connected with the first control circuit 10451, and the first semiconductor refrigeration piece is connected with the first control circuit 10451 through the first power polarity switching circuit 1021 and the first power regulating circuit 1023; the second temperature measuring device 105 is connected with the second control circuit 10452, and the second semiconductor chilling plate is connected with the second control circuit 10452 through the second power polarity switching circuit 1022 and the second power regulating circuit 1024; one end of the rectifying and voltage stabilizing circuit 106 is connected to the first power regulating circuit 1023 and the second power regulating circuit 1024, and the other end is connected to the power supply 107.
Specifically, considering that the temperature of the protective housing 104 may be too high after the polarity of the semiconductor chilling plate is switched, it is required to determine whether to allow switching of the first polarity applied to the first plate and the second polarity applied to the second plate of the semiconductor chilling plate based on the actual temperature measured by the second temperature measuring device 105, where the above contents are referred to for specific implementation processes of electrode polarity switching and power adjustment of the semiconductor chilling plate, and are not described herein again.
Specifically, the first control circuit 10451 is configured to receive the current temperature of the cleaning solution measured by the first temperature measuring device 103, and based on a difference between the current temperature of the cleaning solution and a target temperature, control the first power polarity switching circuit 1021 to switch a first polarity applied to a first sheet of the first semiconductor cooling sheet and a second polarity applied to a second sheet of the first semiconductor cooling sheet, and calculate a power required to be adjusted by the first power adjusting circuit 1023, so as to adjust the power applied to the first semiconductor cooling sheet; correspondingly, the second control circuit 10452 is configured to receive the actual temperature between the first semiconductor chilling plate and the second semiconductor chilling plate measured by the second temperature measuring device 105, and based on the actual temperature and the maximum heat-resistant temperature of the protective housing, control the second power polarity switching circuit 1022 to switch the first polarity applied to the first plate body of the second semiconductor chilling plate and the second polarity applied to the second plate body, and calculate the power magnitude required to be adjusted by the second power adjusting circuit 1024, so as to adjust the power magnitude applied to the second semiconductor chilling plate.
Specifically, in the cooling process of the cleaning solution in the cleaning tank 20, the polarity of the electrode applied to the first semiconductor cooling plate can be switched to change the first plate body of the first semiconductor cooling plate from a hot surface to a cold surface, and then directly cooling the cleaning solution, at the moment, because the second sheet body of the first semiconductor refrigeration sheet changes from a cold surface to a hot surface, if the temperature of the first sheet body of the first semiconductor refrigeration sheet is higher before switching the polarity, after the polarity is switched, the temperature of the second sheet body of the first semiconductor refrigeration sheet is higher, so that the temperature of the first sheet body in the second semiconductor refrigeration sheet is raised in a heat transfer mode, thereby raising the temperature of the second semiconductor cooling plate, which causes the problem of over-temperature of the protective casing 104, and therefore, after switching the polarity, the temperature of the second one of the second semiconductor cooling fins cannot be higher than the maximum heatproof temperature of the protective housing 104;
specifically, before switching the polarities, it may be determined whether to switch the first polarity applied to the first sheet body of the semiconductor chilling plate and the second polarity applied to the second sheet body based on the actual temperature and the difference between the maximum heatproof temperature of the protection shell 104 and the junction temperature difference of the semiconductor chilling plate close to the protection shell, and in order to switch the electrode polarities of the first sheet body and the second sheet body of the first semiconductor chilling plate to cool the cleaning solution, for example, before switching the polarities, if the actual temperature between the first semiconductor chilling plate and the second semiconductor chilling plate is greater than or equal to the difference between the maximum heatproof temperature of the protection shell 104 and the junction temperature difference of the semiconductor chilling plate close to the protection shell, that is, if the actual temperature measured by the second temperature measuring device 105 is greater than or equal to the difference between the maximum heatproof temperature of the protection shell 104 and the junction temperature difference of the semiconductor chilling plate close to the protection shell, after the polarity is switched, the temperature of the second sheet body in the first semiconductor refrigeration sheet is increased, so that the temperature of the second sheet body in the first semiconductor refrigeration sheet is greater than the maximum heat-resistant temperature of the protective shell 104, and further the influence is caused on the protective shell 104, therefore, before the polarity is switched, the actual temperature between the first semiconductor refrigeration sheet and the second semiconductor refrigeration sheet is less than the difference value between the maximum heat-resistant temperature of the protective shell 104 and the junction temperature difference of the semiconductor refrigeration sheet close to the protective shell.
Specifically, in the cooling process of the cleaning solution in the cleaning tank 20, the first sheet of the second semiconductor chilling plate is changed into a cold surface by switching the polarity of the electrode applied to the second semiconductor chilling plate, and the temperature of the second sheet in the first semiconductor chilling plate is reduced in a heat transfer manner, so that the temperature of the first sheet in the first semiconductor chilling plate is reduced through the junction temperature difference of the first semiconductor chilling plate, and the cleaning solution is cooled, at this time, the temperature of the first sheet in the second semiconductor chilling plate (i.e., the actual temperature measured by the second temperature measuring device 105) is at least smaller than the difference between the maximum heat-resistant temperature of the protective housing 104 and the junction temperature difference of the semiconductor chilling plate close to the protective housing.
In the embodiment that the application provided, through add second temperature measurement device 105 between the second lamellar body of first semiconductor refrigeration piece and the first lamellar body of second semiconductor refrigeration piece, so that controlling means can judge whether to the first polarity of applying the first lamellar body in the semiconductor refrigeration piece based on the actual temperature that second temperature measurement device 105 surveyed, and apply and switch to the second polarity of second lamellar body, thereby when cooling down the washing liquid through switching polarity, can not cause the influence to the protective housing 104 of washing tank 20 because the semiconductor refrigeration piece temperature that is close to protective housing 104 risees, can also make temperature control more accurate.
By adopting the technical scheme of the embodiment of the application, the refrigeration piece module is arranged on the outer wall of the cleaning tank, and then the temperature of the cleaning liquid in the cleaning tank is flexibly controlled by controlling the electrode polarities of the first piece body and the second piece body applied to the semiconductor refrigeration piece and the power applied between the first piece body and the second piece body based on the target temperature of the current temperature of the cleaning liquid in the cleaning tank through the control module, so that the heating effect of the cleaning liquid can be achieved, the cleaning liquid can be reduced from high temperature to low temperature, the flexible switching of the heating and cooling functions can be achieved, and the temperature control can be more accurate; and owing to be in under operating condition's the circumstances at the semiconductor refrigeration piece, can produce certain difference in temperature between first lamellar body and the second lamellar body, can play the effect of cooling down the protection to the protecting sheathing of washing tank like this to reach and prevent to lead to protecting sheathing to be heated the problem of deformation because of the high heating temperature of the washing liquid in the washing tank.
In summary, particular embodiments of the present subject matter have been described. Other embodiments are within the scope of the following claims. In some cases, the actions recited in the claims can be performed in a different order and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing may be advantageous.
Above for the controlling means of cleaning solution temperature among wafer cleaning equipment that this application embodiment provided, based on same thinking, this application embodiment still provides a wafer cleaning equipment.
As shown in fig. 7, the wafer cleaning apparatus includes: a cleaning tank 20 and a control device 10 for controlling the temperature of the cleaning liquid in the wafer cleaning equipment;
the cooling plate module 101 in the control device 102 is disposed on the outer wall of the cleaning tank 20, at least two semiconductor cooling plates are sequentially disposed between the outer wall of the cleaning tank 20 and the protective housing 104, and the first temperature measuring device 103 is disposed in the cleaning tank 20.
According to the wafer cleaning equipment provided by the embodiment of the application, the refrigeration piece module is arranged on the outer wall of the cleaning tank, and then the temperature of the cleaning liquid in the cleaning tank is flexibly controlled by the control module based on the target temperature of the current temperature of the cleaning liquid in the cleaning tank, the electrode polarities of the first piece body and the second piece body applied to the semiconductor refrigeration piece and the power applied between the first piece body and the second piece body are controlled, so that the heating effect of the cleaning liquid can be achieved, the cleaning liquid can be reduced from high temperature to low temperature, the flexible switching of the heating and cooling functions is achieved, and the temperature control is more accurate; and owing to be in under operating condition's the circumstances at the semiconductor refrigeration piece, can produce certain difference in temperature between first lamellar body and the second lamellar body, can play the effect of cooling down the protection to the protecting sheathing of washing tank like this to reach and prevent to lead to protecting sheathing to be heated the problem of deformation because of the high heating temperature of the washing liquid in the washing tank.
It should be noted that the control device 10 for controlling the temperature of the cleaning liquid in the wafer cleaning apparatus is based on the control devices shown in fig. 1 to fig. 6, and thus the specific implementation of this embodiment can refer to the specific implementation of the control device for controlling the temperature of the cleaning liquid in the wafer cleaning apparatus, and repeated details are not repeated.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the present invention are usually placed in when used, and are only used for convenience of describing the embodiments of the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the embodiments of the present application. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present application, it should also be noted that, unless otherwise explicitly stated or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. Specific meanings of the above terms in the embodiments of the present application can be understood in specific cases by those of ordinary skill in the art.
Finally, it should be noted that: although the embodiments of the present application have been described in detail with reference to the accompanying drawings for illustrating the technical solutions of the embodiments of the present application, the embodiments of the present application are not limited to the above-mentioned specific embodiments, and the scope of the embodiments of the present application is not limited thereto, and the above-mentioned specific embodiments are only illustrative and not limiting, and although the embodiments of the present application have been described in detail with reference to the above-mentioned embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope disclosed in the embodiments of the present application; such modifications, changes or substitutions do not depart from the spirit and scope of the present disclosure, which should be construed in light of the above teachings. Are intended to be covered by the scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. A control device for temperature of a cleaning liquid in a wafer cleaning apparatus, the control device comprising: the refrigerator comprises a refrigerating piece module, a control module and a first temperature measuring device; wherein the content of the first and second substances,
the plurality of refrigerating piece modules are attached to the outer wall of a cleaning tank of the wafer cleaning equipment, each refrigerating piece module comprises at least two semiconductor refrigerating pieces which are sequentially in heat conduction connection, and each semiconductor refrigerating piece comprises a first piece body and a second piece body; the first sheet body and the second sheet body are respectively connected with the control module;
the first temperature measuring device is used for measuring the current temperature of the cleaning liquid in the cleaning tank and transmitting the current temperature to the control module;
the control module is used for controlling a first polarity applied to the first sheet body in the semiconductor refrigeration sheets, a second polarity applied to the second sheet body in the semiconductor refrigeration sheets and the applied power between the first sheet body and the second sheet body according to the current temperature and the target temperature of the cleaning liquid.
2. The control device of claim 1, wherein the control module comprises: the power supply comprises at least two power supply polarity switching circuits, at least two power regulating circuits and a central control circuit;
the first sheet body of each semiconductor refrigerating sheet is connected with a power supply through one power supply polarity switching circuit and one power regulating circuit; the second sheet body of each semiconductor refrigeration sheet is connected with the power supply through another power supply polarity switching circuit and another power regulation circuit;
the central control circuit is respectively connected with the first temperature measuring device, the at least two power supply polarity switching circuits and the at least two power regulating circuits;
the central control circuit is used for controlling a first polarity applied to the first sheet body and a second polarity applied to the second sheet body through the power supply polarity switching circuit according to the current temperature and the target temperature, and controlling the power applied between the first sheet body and the second sheet body through the power adjusting circuit.
3. The control device as claimed in claim 1, wherein a protective shell is further arranged outside the cleaning tank, and a second temperature measuring device is further arranged between at least two semiconductor chilling plates;
the second temperature measuring device is used for measuring the actual temperature of the first sheet body of the semiconductor refrigeration sheet close to the protective shell and transmitting the actual temperature to the control module;
the control module is further configured to determine whether to switch a first polarity applied to the first sheet and a second polarity applied to the second sheet in the semiconductor chilling plate based on the actual temperature and the maximum heat-resistant temperature of the protective housing, and switch the first polarity and the second polarity if the determination result is yes, or adjust the power applied between the first sheet and the second sheet if the determination result is no.
4. The control device of claim 3, wherein the control module is further specifically configured to adjust an amount of power applied between the first sheet and the second sheet based on the actual temperature when the actual temperature is greater than or equal to a first preset value until the actual temperature is less than the first preset value; when the actual temperature is lower than the first preset value, determining to switch the first polarity and the second polarity;
wherein the first preset value is related to a difference between the maximum heatproof temperature and a junction temperature difference of the semiconductor chilling plate close to the protective housing.
5. The control device of claim 3, wherein the at least two semiconductor chilling plates comprise: the first semiconductor refrigerating piece and the second semiconductor refrigerating piece;
wherein, first lamellar body in the first semiconductor refrigeration piece set up in on the outer wall of washing tank, second lamellar body in the first semiconductor refrigeration piece with first lamellar body heat-conduction connection in the first semiconductor refrigeration piece, first lamellar body in the second semiconductor refrigeration piece with second lamellar body heat-conduction connection in the first semiconductor refrigeration piece, second lamellar body in the second semiconductor refrigeration piece with first lamellar body heat-conduction connection in the second semiconductor refrigeration piece just is close to protective housing.
6. The control device of claim 5, wherein the control module is further specifically configured to adjust the amount of power applied to the first semiconductor chilling plate and the amount of power applied to the second semiconductor chilling plate based on the actual temperature if the actual temperature is greater than or equal to a difference between the maximum heatproof temperature and a junction temperature difference of the second semiconductor chilling plate;
in the event that the actual temperature is less than the difference between the maximum refractory temperature and the junction temperature difference of the second semiconductor chilling plate, switching a first polarity applied to the first one of the second semiconductor chilling plates and a second polarity applied to the second one of the second semiconductor chilling plates to cause the first one of the second semiconductor chilling plates to reduce the temperature of the second one of the first semiconductor chilling plates by way of heat transfer;
and under the condition that the current temperature reaches a second preset value, adjusting the power applied between the first sheet body and the second sheet body in the first semiconductor refrigeration sheet so as to enable the current temperature to reach the target temperature.
7. The control device as claimed in claim 5, wherein a plurality of said refrigeration sheet modules are arranged in an array on the outer wall of said cleaning tank.
8. The control device of claim 5, wherein the first sheet and the second sheet are bonded by a thermally conductive adhesive, and wherein the first semiconductor chilling plate and the second semiconductor chilling plate are bonded by the thermally conductive adhesive.
9. The control device of claim 2, wherein the power supply is an ac power supply, and the control module further comprises: the rectification voltage stabilizing circuit is arranged between the power regulating circuit and the power supply;
the rectification voltage stabilizing circuit is used for converting the alternating current provided by the power supply to obtain the required direct current and transmitting the direct current to the power regulating circuit;
the power regulating circuit is used for regulating the magnitude of the direct-current voltage output to the semiconductor refrigeration sheet so as to regulate the magnitude of power applied between the first sheet body and the second sheet body.
10. A wafer cleaning apparatus, comprising: a cleaning tank and a cleaning liquid temperature control apparatus as claimed in any one of claims 1 to 9.
CN202111445138.9A 2021-11-30 2021-11-30 Control device for temperature of cleaning liquid in wafer cleaning equipment and wafer cleaning equipment Pending CN114171436A (en)

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CN202111445138.9A CN114171436A (en) 2021-11-30 2021-11-30 Control device for temperature of cleaning liquid in wafer cleaning equipment and wafer cleaning equipment
TW111143739A TWI830499B (en) 2021-11-30 2022-11-16 Control device of cleaning solution temperature in wafer cleaning equipment and wafer cleaning equipment
PCT/CN2022/132194 WO2023098475A1 (en) 2021-11-30 2022-11-16 Control apparatus for temperature of cleaning liquid in wafer cleaning equipment and wafer cleaning equipment

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