CN114164496B - 控制晶棒冷却时间的方法和装置 - Google Patents
控制晶棒冷却时间的方法和装置 Download PDFInfo
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- CN114164496B CN114164496B CN202111406191.8A CN202111406191A CN114164496B CN 114164496 B CN114164496 B CN 114164496B CN 202111406191 A CN202111406191 A CN 202111406191A CN 114164496 B CN114164496 B CN 114164496B
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- 238000001816 cooling Methods 0.000 title claims abstract description 144
- 239000013078 crystal Substances 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000009423 ventilation Methods 0.000 claims abstract description 129
- 230000001276 controlling effect Effects 0.000 claims description 54
- 239000000112 cooling gas Substances 0.000 claims description 38
- 230000008859 change Effects 0.000 claims description 8
- 230000002596 correlated effect Effects 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 238000010791 quenching Methods 0.000 abstract description 40
- 230000000171 quenching effect Effects 0.000 abstract description 38
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000005336 cracking Methods 0.000 abstract description 7
- 238000007664 blowing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 230000003750 conditioning effect Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Furnace Details (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN202111406191.8A CN114164496B (zh) | 2021-11-24 | 2021-11-24 | 控制晶棒冷却时间的方法和装置 |
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CN202111406191.8A CN114164496B (zh) | 2021-11-24 | 2021-11-24 | 控制晶棒冷却时间的方法和装置 |
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CN114164496A CN114164496A (zh) | 2022-03-11 |
CN114164496B true CN114164496B (zh) | 2023-07-11 |
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Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10310491A (ja) * | 1997-05-02 | 1998-11-24 | Sumitomo Sitix Corp | 単結晶の取り出し装置および取り出し方法 |
CN107227487B (zh) * | 2017-07-19 | 2023-08-18 | 天津环际达科技有限公司 | 一种真空炉内复合冷却提速成晶设备 |
CN111834247B (zh) * | 2019-04-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | 冷却装置和半导体处理设备 |
CN110029394A (zh) * | 2019-05-28 | 2019-07-19 | 西安奕斯伟硅片技术有限公司 | 一种拉晶炉和冷却方法 |
CN212175074U (zh) * | 2020-01-16 | 2020-12-18 | 内蒙古中环光伏材料有限公司 | 一种加快大尺寸单晶降温的副室装置 |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230515 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Applicant after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |
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