CN114156232A - Silicon-based slit structure and preparation method thereof - Google Patents
Silicon-based slit structure and preparation method thereof Download PDFInfo
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- CN114156232A CN114156232A CN202111448305.5A CN202111448305A CN114156232A CN 114156232 A CN114156232 A CN 114156232A CN 202111448305 A CN202111448305 A CN 202111448305A CN 114156232 A CN114156232 A CN 114156232A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 111
- 239000010703 silicon Substances 0.000 title claims abstract description 111
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000010410 layer Substances 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000011358 absorbing material Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 229910021418 black silicon Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 9
- 230000031700 light absorption Effects 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 230000036961 partial effect Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000007737 ion beam deposition Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000001017 electron-beam sputter deposition Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 43
- 102100027340 Slit homolog 2 protein Human genes 0.000 description 16
- 101710133576 Slit homolog 2 protein Proteins 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
本发明提供硅基狭缝结构及其制备方法，包括硅基片、狭缝、梯形槽、吸光材料层和金属保护层；硅基片的晶面晶向为(111)；硅基片的入射面开设有至少一个的狭缝，狭缝结构供入射光通过硅基片；硅基片的出射面开设有梯形槽，狭缝的长度方向和梯形槽的长度方向分别沿硅基片的长度方向布置；从入射面至其出射面方向，梯形槽的槽宽逐渐变大；在硅基片的纵截面上，所有狭缝与梯形槽相通，并且梯形槽的槽底的两端与每个狭缝具有间隔；吸光材料层位于硅基片的入射面上，用以减小入射光的反射；金属保护层位于硅基片的出射面上，用以防止杂散光透过硅基片。本发明采用常用的半导体硅材料加工工艺，具有大批量制备和成本低的优点。
The invention provides a silicon-based slit structure and a preparation method thereof, comprising a silicon substrate, a slit, a trapezoidal groove, a light absorbing material layer and a metal protective layer; the crystal plane of the silicon substrate is (111); The surface is provided with at least one slit, and the slit structure is for incident light to pass through the silicon substrate; the exit surface of the silicon substrate is provided with a trapezoidal groove, and the length direction of the slit and the length direction of the trapezoidal groove are respectively along the length direction of the silicon substrate. Arrangement; from the incident surface to the direction of its exit surface, the groove width of the trapezoidal groove gradually increases; on the longitudinal section of the silicon substrate, all the slits communicate with the trapezoidal groove, and the two ends of the groove bottom of the trapezoidal groove are connected with each slit. The slits are spaced; the light absorbing material layer is located on the incident surface of the silicon substrate to reduce the reflection of incident light; the metal protective layer is located on the exit surface of the silicon substrate to prevent stray light from passing through the silicon substrate. The invention adopts the common semiconductor silicon material processing technology, and has the advantages of mass production and low cost.
Description
Technical Field
The invention relates to the field of optical slits, in particular to a silicon-based slit structure and a preparation method thereof.
Background
The ideal optical characteristics of the optical slit are shown in fig. 1, the incident light irradiates the slit from the incident surface, and 100% of the light beam passes through the position corresponding to the slit on the emergent surface; at the position of the non-slit of the emergent surface, no light beam passes, namely T1 is 0; at the non-slit position of the incident surface, the reflected light intensity is 0, i.e., R1 is 0%. The conventional slit is formed on the metal sheet by laser, and when the size of the slit is further reduced, for example, less than 10 μm, the edge profile of the laser-processed metal sheet cannot meet the requirement of the slit. In addition, the light absorption treatment of the metal sheet slit on the incident surface generally adopts a borax process, and 100% light absorption cannot be realized.
Disclosure of Invention
The present invention is directed to solving the above problems, and the object of the present invention is to provide a silicon-based slit structure with simple structure, low cost, and small size.
In order to achieve the purpose, the invention adopts the following specific technical scheme:
the silicon-based slit structure comprises a silicon substrate, a slit, a trapezoidal groove, a light absorption material layer and a metal protective layer;
the crystal orientation of the crystal face of the silicon substrate is <111 >;
the incident surface of the silicon substrate is provided with at least one slit, and the slit is used for transmitting incident light through the silicon substrate;
the emergent surface of the silicon substrate is provided with a trapezoidal groove;
the groove width of the trapezoidal groove is gradually increased from the incident surface of the silicon substrate to the emergent surface of the silicon substrate; on the longitudinal section of the silicon substrate, all the slits are communicated with the trapezoidal groove, and two ends of the bottom of the trapezoidal groove are spaced from each slit;
the light absorption material layer is positioned on the incident surface of the silicon substrate and used for reducing the reflection of incident light;
the metal protection layer is positioned on the emergent surface of the silicon substrate and used for preventing stray light from penetrating through the silicon substrate.
Further, the light absorption material layer is of a black silicon structure.
Further, the material of the metal protection layer is any one of Au, Al, Ni, a, and Pt.
Further, the trapezoidal groove is prepared by a wet etching process.
A preparation method for preparing a silicon-based slit structure comprises the following steps:
s1, providing a silicon substrate;
s2, preparing a second protective film on the incident surface and a first protective film on the emergent surface;
s3, preparing a slit and a trapezoidal groove;
wherein the step of preparing the slit comprises: covering a second photoresist layer on a partial region of the second protective film to expose a region corresponding to the position of the slit on the second protective film; etching the second protective film and the silicon substrate to form a slit; removing the second photoresist layer;
wherein the step of preparing the trapezoidal groove comprises: covering a first photoresist layer on a partial region of the first protective film to expose a region corresponding to the position of the trapezoidal groove on the first protective film; etching the first protective film and the silicon substrate to form a trapezoidal groove; removing the first photoresist layer;
s4, removing the first protective film and the second protective film;
s5, preparing a black silicon structure on the silicon substrate;
s6, preparing a metal protective layer on the silicon substrate;
and S7, cutting the silicon substrate, the black silicon structure and the metal protection layer to separate the single silicon-based slit structure.
Further, the black silicon structure is prepared by any one of dry etching, wet etching, and femtosecond laser processing in step S5.
Further, a metal protection layer is prepared by any one of vacuum electron beam evaporation, sputtering, and thermal evaporation in step S6.
Further, the materials of the second protective film and the first protective film in step S2 are SiO respectively2、Si3N4、Al2O3And Cr.
Further, the material of the second protective film and the first protective film in step S2 is SiO2The method of preparing the first protective film and the second protective film employs any one of magnetron sputtering, ion beam deposition, chemical vapor deposition, thermal oxidation, and sol-gel.
Further, the second photoresist layer and the silicon substrate are etched using a dry etching method in step S3.
The invention can obtain the following technical effects:
the invention is particularly suitable for diaphragms, adopts a common semiconductor silicon material processing technology, has the advantages of large-batch preparation and low cost, and is more suitable for application scenes of small slits.
Drawings
FIG. 1 is a schematic diagram of the optical characteristics of an ideal optical slit;
FIG. 2 is a schematic structural diagram of a single-slit silicon-based slit structure disclosed in the present invention;
FIG. 3 is a schematic structural diagram of a multi-slit silicon-based slit structure disclosed in the present invention;
FIG. 4 is a flow chart of a method of preparation of the present disclosure;
FIG. 5 is a schematic view of a silicon substrate according to the present disclosure;
FIG. 6 is a schematic view of a silicon substrate after fabrication of a protective film according to the present disclosure;
FIG. 7 is a schematic illustration of a structure of a silicon substrate having a first photoresist layer according to the present disclosure;
FIG. 8 is a schematic view of a silicon substrate after etching a first protective film in accordance with the present disclosure;
FIG. 9 is a schematic view of a silicon substrate after the formation of a trapezoidal groove according to the present disclosure;
FIG. 10 is a schematic illustration of a silicon substrate after removal of a first photoresist layer in accordance with the present disclosure;
FIG. 11 is a schematic illustration of a silicon substrate having a second photoresist layer according to the present disclosure;
FIG. 12 is a schematic view of a silicon substrate etched with a second protective film according to the present disclosure;
FIG. 13 is a schematic view of a structure of a silicon substrate after slit fabrication according to the present disclosure;
FIG. 14 is a schematic view of a silicon substrate with the protective film removed according to the present disclosure;
FIG. 15 is a schematic illustration of a silicon substrate after fabrication of a black silicon structure according to the present disclosure;
FIG. 16 is a schematic view of a silicon substrate after fabrication of a metal protection layer according to the present disclosure.
Reference numerals:
the light-absorbing structure comprises a silicon substrate 1, a slit 2, a trapezoidal groove 3, a light-absorbing material layer 4, a metal protection layer 5, a first protection film 11, a second protection film 12, a first photoresist layer 13 and a second photoresist layer 14.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
The silicon-based slit structure shown in fig. 2-3 comprises a slit 2 of a light absorbing material layer 4, a silicon substrate 1, a trapezoidal groove 3 and a metal protection layer 5 from top to bottom. The through hole formed by the slit 2 and the trapezoidal groove 3 penetrates through the whole silicon-based slit structure.
Wherein the silicon substrate 1 is a single crystal having a crystal plane with a crystal orientation <111>, and has opposing entrance and exit faces with a thickness between the two faces of typically tens to hundreds of microns. The shape of the silicon substrate is not limited, and may be rectangular, square, triangular, circular, or the like.
Wherein the slit 2 is opened at the incident surface of the silicon substrate 1, and the width thereof is usually between several micrometers and several tens of millimeters. In particular, the slit of the present invention may comprise one slit as shown in fig. 2; or a plurality of slits as shown in FIG. 3, the width of which may be the same or different, the plurality of slits being juxtaposed in the width direction of the silicon substrate 1. The slits 2 provide incident light through the silicon-based slit structure.
Wherein the trapezoidal groove 3 is located on the exit surface of the silicon substrate 1, and the length direction of the slit 2 and the length direction of the trapezoidal groove 3 are respectively arranged along the length direction of the silicon substrate 1. The groove width of the trapezoidal groove 3 becomes gradually larger from the incident surface of the silicon substrate 1 to the exit surface thereof. So that the top edge of the trapezoidal groove 3 is located inside the silicon substrate 1 in a longitudinal section thereof. The trapezoidal groove 3 communicates with the slits 2, and both ends of the bottom (i.e., top) of the trapezoidal groove 3 are spaced apart from each slit 2. The designed interval means that when only one slit 2 is provided, the top edge of the trapezoidal groove 3 is wider than the width of the slit; when the slit 2 is plural, two end points of the top side are spaced from the slit 2, and the silicon substrate 1 is retained. After the incident light passes through the slit 2, the light can be diffused, so that the rear surface of the slit 2 is a trapezoidal groove, and the light is prevented from irradiating on the silicon material. The <111> crystal-oriented silicon is etched by a wet method, and is made to be trapezoidal naturally, so that the trapezoidal groove 3 is quickly obtained.
Wherein, the light absorbing material layer 4 is positioned on the incident surface of the silicon substrate 1 to reduce the reflection of the incident light. Preferably selecting a black silicon structure, wherein the black silicon structure is an irregular silicon pillar forest, and the preparation of the black silicon structure can adopt dry etching, wet etching, femtosecond laser processing and the like. The function of the black silicon structure is to absorb incident light and prevent reflection. The nature of the black silicon and the silicon base are the same material, and the black silicon is only a forest-like structure (with small size) of the silicon, so that the method has the advantages of being the same material and not needing to introduce other materials and preparation methods. Other light absorbing materials with high absorption, typically greater than 90%, may also be used for the light absorbing material layer 4.
The metal protection layer 5 is located on the emergent surface of the silicon substrate 1 to prevent stray light from transmitting through the silicon substrate 1. The material of the metal protective layer 5 is any one of Au, Al, Ni, a, and Pt, but is not limited thereto. The thickness of the metal reflective layer 5 is set according to actual requirements, and the function of the metal reflective layer is to prevent light from transmitting.
A preparation method of a silicon-based slit structure comprises the following steps:
s1, providing a silicon substrate 1; as shown in fig. 4, the silicon substrate 1 is typically a 4-inch, 6-inch, 8-inch or 12-inch silicon wafer on which a plurality of silicon-based slit structures can be simultaneously fabricated.
S2, as shown in fig. 6, preparing the second protective film 12 on the incident surface and the first protective film 11 on the exit surface; preferably, both protective films are SiO2A film. Preparing first SiO on the upper and lower surfaces of a silicon substrate 12Film and second SiO2A film; SiO22The film growth can adopt magnetron sputtering, ion beam deposition, chemical vapor deposition, thermal oxidation method, sol-gel method and the like. SiO22The film plays a role of protecting the pattern in the subsequent Si etching process, and other film materials with the protection function, such as Si, can also be adopted3N4Film of Al2O3Thin film, Cr film, and the like.
S3, preparing a slit 2 and a trapezoidal groove 3; there is no order requirement between the preparation of the slits 2 or the trapezoidal grooves 3.
Wherein, the step of preparing the trapezoidal groove 3 comprises: a first photoresist layer 13 is formed on a partial region of the first protection film 11 as shown in fig. 7 to expose a region of the first protection film 11 corresponding to the position of the trapezoidal groove 3;
etching the portion of the first protective film 11 not covered by the photoresist, as shown in fig. 8; the etching method can be wet etching or dry etching;
etching the silicon substrate 1 to prepare a trapezoidal groove 3 as shown in fig. 9; the etching method can be wet etching or dry etching;
the first photoresist layer 13 is removed as shown in fig. 10.
Wherein the step of preparing the slit 2 comprises:
a second photoresist 14 is formed on the second protective film 12, as shown in fig. 11; covering a second photoresist layer 14 on a partial region of the second protective film 12 to expose a region corresponding to the position of the slit 2 on the second protective film 12;
etching the portion of the second protective film 12 not covered by the photoresist, as shown in fig. 12; the etching method can be wet etching or dry etching;
etching the silicon substrate 1 to prepare a slit 2 as shown in FIG. 13; in order to better control the width of the slit 2, a dry etching process is generally adopted;
s4, removing the second photoresist 14, the first SiO2 film and the second SiO2 film, as shown in FIG. 14;
s5, preparing a black silicon structure on the silicon substrate 1; as shown in fig. 15; the black silicon structure 4 and the slit structure 2 are positioned on the same side of the silicon substrate; the preparation method of the black silicon structure can adopt dry etching, wet etching, femtosecond laser processing and the like.
S6, preparing a metal protection layer 5 on the silicon substrate 1; as shown in fig. 16; the metal reflecting layer 5 and the trapezoidal groove 3 are positioned on the same side of the silicon substrate 1; the metal reflective layer material may be Au, Al, Ni, Ag, Pt, etc., but is not limited thereto. The preparation method can adopt vacuum electron beam evaporation, sputtering, thermal evaporation and the like.
And S7, cutting the silicon substrate 1, the black silicon structure and the metal protection layer 5 to separate a single silicon-based slit structure. In particular, when a plurality of silicon-based slit structures are arranged in step S1, the silicon wafer is cut, and the entire silicon wafer is cut into a single slit device as shown in fig. 2.
The size of the slit is determined by the precision of the photoetching process, so that the problem that the small-size slit cannot be made due to the fact that laser cutting is adopted in the traditional metal processing is solved; the silicon-based slit has the advantage of high precision in the preparation of small-size slits; the incident plane of the slit adopts a black silicon structure, so that high light absorption rate can be realized, and the adverse effect of reflected light is reduced; the outgoing surface is plated with a metal film to prevent light leakage.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and should not be taken as limiting the invention. Variations, modifications, substitutions and alterations of the above-described embodiments may be made by those of ordinary skill in the art without departing from the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. The silicon-based slit structure is characterized by comprising a silicon substrate (1), a slit (2), a trapezoidal groove (3), a light absorption material layer (4) and a metal protection layer (5);
the crystal orientation of the crystal face of the silicon substrate (1) is <111 >;
the incident surface of the silicon substrate (1) is provided with at least one slit (2), and incident light passes through the silicon substrate (1) through the slit (2);
the emergent surface of the silicon substrate (1) is provided with a trapezoidal groove (3);
the groove width of the trapezoidal groove (3) is gradually increased from the incident surface to the emergent surface of the silicon substrate (1); on the longitudinal section of the silicon substrate (1), all the slits (2) are communicated with the trapezoidal grooves (3), and two ends of the groove bottom of each trapezoidal groove (3) are spaced from each slit (2);
the light absorption material layer (4) is positioned on the incident surface of the silicon substrate (1) and used for reducing the reflection of the incident light;
the metal protection layer (5) is located on the emergent surface of the silicon substrate (1) and used for preventing stray light from penetrating through the silicon substrate (1).
2. A silicon-based slit structure according to claim 1, wherein the light absorbing material layer (4) is a black silicon structure.
3. Silicon-based slot structure according to claim 1, wherein the material of the metal protection layer (5) is any one of Au, Al, Ni, a, Pt.
4. Silicon-based slit structure according to claim 1, wherein the trapezoidal grooves (3) are prepared by a wet etching process.
5. A method for preparing a silicon-based slit structure according to claim 2, comprising the steps of:
s1, providing the silicon substrate (1);
s2, preparing a second protective film (12) on the incident surface and a first protective film (11) on the emergent surface;
s3, preparing the slit (2) and the trapezoidal groove (3);
wherein the step of preparing the slit (2) comprises: covering a second photoresist layer (14) on a partial area of the second protective film (12) to expose an area corresponding to the position of the slit (2) on the second protective film (12); etching the second protective film (12) and the silicon substrate (1) to form the slit (2); removing the second photoresist layer (14);
wherein the step of preparing the trapezoidal groove (3) comprises: covering a first photoresist layer (13) on a partial region of the first protection film (11) to expose a region corresponding to the position of the trapezoidal groove (3) on the first protection film (11); etching the first protective film (11) and the silicon substrate (1) to form the trapezoidal groove (3); removing the first photoresist layer (13);
s4, removing the first protection film (11) and the second protection film (12);
s5, preparing the black silicon structure on the silicon substrate (1);
s6, preparing the metal protection layer (5) on the silicon substrate (1);
s7, cutting the silicon substrate (1), the black silicon structure and the metal protection layer (5) to separate a single silicon-based slit structure.
6. The manufacturing method according to claim 5, wherein the black silicon structure is manufactured by any one of dry etching, wet etching, and femtosecond laser processing in the step S5.
7. The production method according to claim 5, wherein the metal protective layer (5) is produced in the step S6 by any one of vacuum electron beam evaporation, sputtering, and thermal evaporation.
8. The production method according to claim 5, wherein the materials of the second protective film (12) and the first protective film (11) in the step S2 are SiO2、Si3N4、Al2O3And Cr.
9. The production method according to claim 5, wherein the material of the second protective film (12) and the first protective film (11) in the step S2 is SiO2The method of preparing the second protective film (12) and the first protective film (11) employs any one of magnetron sputtering, ion beam deposition, chemical vapor deposition, thermal oxidation, and sol-gel.
10. The production method according to claim 5, wherein the second photoresist layer (14) and the silicon substrate (1) are etched in the step S3 using a dry etching method.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101645484A (en) * | 2009-03-02 | 2010-02-10 | 中国科学院声学研究所 | Soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip and prepration method thereof |
| US20110171447A1 (en) * | 2004-08-03 | 2011-07-14 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
| CN102598862A (en) * | 2009-10-28 | 2012-07-18 | 住友化学株式会社 | Method for producing organic EL element |
| CN102881581A (en) * | 2011-07-11 | 2013-01-16 | 南亚科技股份有限公司 | Method for forming slits in substrate and composition of etching gas |
| CN108123067A (en) * | 2017-11-16 | 2018-06-05 | 上海视涯信息科技有限公司 | A kind of shadow mask and its manufacturing method |
-
2021
- 2021-11-30 CN CN202111448305.5A patent/CN114156232B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110171447A1 (en) * | 2004-08-03 | 2011-07-14 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
| CN101645484A (en) * | 2009-03-02 | 2010-02-10 | 中国科学院声学研究所 | Soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip and prepration method thereof |
| CN102598862A (en) * | 2009-10-28 | 2012-07-18 | 住友化学株式会社 | Method for producing organic EL element |
| CN102881581A (en) * | 2011-07-11 | 2013-01-16 | 南亚科技股份有限公司 | Method for forming slits in substrate and composition of etching gas |
| CN108123067A (en) * | 2017-11-16 | 2018-06-05 | 上海视涯信息科技有限公司 | A kind of shadow mask and its manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| 田苗等: "用于垂直耦合的非对称光栅耦合器的研究进展", 《激光与光电子学进展》, vol. 58, no. 5, 28 June 2021 (2021-06-28) * |
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