CN114133876B - Alkali polishing auxiliary agent for small tower-shaped silicon chip and application thereof - Google Patents
Alkali polishing auxiliary agent for small tower-shaped silicon chip and application thereof Download PDFInfo
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- CN114133876B CN114133876B CN202111298362.XA CN202111298362A CN114133876B CN 114133876 B CN114133876 B CN 114133876B CN 202111298362 A CN202111298362 A CN 202111298362A CN 114133876 B CN114133876 B CN 114133876B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000005498 polishing Methods 0.000 title claims abstract description 79
- 239000003513 alkali Substances 0.000 title claims abstract description 34
- 239000012752 auxiliary agent Substances 0.000 title claims abstract description 30
- 238000005260 corrosion Methods 0.000 claims abstract description 44
- 230000007797 corrosion Effects 0.000 claims abstract description 44
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000002585 base Substances 0.000 claims abstract description 24
- 239000002671 adjuvant Substances 0.000 claims abstract description 20
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 15
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 15
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 14
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims abstract description 12
- 229940051841 polyoxyethylene ether Drugs 0.000 claims abstract description 12
- 229920000056 polyoxyethylene ether Polymers 0.000 claims abstract description 12
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 claims abstract description 8
- 108010010803 Gelatin Proteins 0.000 claims abstract description 6
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims abstract description 6
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229920000159 gelatin Polymers 0.000 claims abstract description 6
- 239000008273 gelatin Substances 0.000 claims abstract description 6
- 235000019322 gelatine Nutrition 0.000 claims abstract description 6
- 235000011852 gelatine desserts Nutrition 0.000 claims abstract description 6
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 30
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 18
- 238000002791 soaking Methods 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract description 70
- 238000007517 polishing process Methods 0.000 abstract description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000000243 solution Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000012876 topography Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of crystalline silicon polishing. An alkali polishing assistant for small tower silicon wafers comprises an assistant A and an assistant B; the adjuvant A comprises the following components in percentage by mass: 0.1-0.5% of silane coupling agent, 2-5% of ethanol, 0.05-0.2% of gelatin, 1-3% of n-butyl alcohol, 0.05-0.2% of sodium dodecyl benzene sulfonate, 0.01-0.05% of perfluoroalkyl polyoxyethylene ether and the balance of deionized water; the adjuvant B comprises the following components in percentage by mass: 0.5-1% of silane coupling agent, 0.1-0.4% of alkyl trimethyl ammonium bromide, 0.01-0.1% of perfluoroalkyl polyoxyethylene ether, 2-5% of ethanol, 1-3% of ammonium persulfate and the balance of deionized water. The alkali polishing auxiliary agent can effectively protect a non-polished surface from being corroded in the alkali polishing process, the alkali corrosion amount of the polished surface is controllable, and the polished silicon wafer pyramid base is small in size, uniform in surface and high in flatness.
Description
Technical Field
The invention belongs to the technical field of crystalline silicon polishing, and particularly relates to a small tower-shaped silicon wafer alkali polishing auxiliary agent and application thereof.
Background
Solar photovoltaic power generation is an important component in a future energy structure, and in a plurality of solar cell routes, a topcon cell is considered to be one of the most promising solar efficient cell technologies in the future due to high power generation efficiency, low cost, low attenuation, simple process flow, good compatibility with the existing perc cell production line and easy upgrading. The mainstream topcon process at present adopts an acid polishing mode, and the method uses a large amount of nitric acid and hydrofluoric acid, so that the cost is high and the environmental protection pressure is high. The alkali polishing technology can effectively solve the problems of cost and environmental protection of acid polishing, but the alkali polishing technology needs a certain amount of corrosion of the silicon wafer, and the corresponding tower base after surface pyramid corrosion is large. The large size of the pyramid base can cause the decrease of the adhesive force of the slurry to the silicon wafer in the screen printing process, the poor contact between the slurry and the silicon wafer, the poor appearance and the reduction of the efficiency, so that the pyramid base with smaller size needs to be formed. Furthermore, the non-polished surface cannot be etched because it is necessary to maintain the pyramid structure, and therefore the silicon dioxide on the front surface needs to be protected from etching in an alkaline solution.
Disclosure of Invention
The invention aims to solve the technical problem of providing the small-tower-shaped silicon wafer alkali polishing auxiliary agent which can effectively protect a non-polished surface from being corroded in the alkali polishing process, the alkali corrosion amount of the polished surface is controllable, and the polished silicon wafer pyramid base has small size, uniform surface and high flatness.
The technical scheme of the invention is as follows:
an alkali polishing assistant for small tower silicon chips comprises an assistant A and an assistant B; the adjuvant A comprises the following components in percentage by mass: 0.1-0.5% of silane coupling agent, 2-5% of ethanol, 0.05-0.2% of gelatin, 1-3% of n-butyl alcohol, 0.05-0.2% of sodium dodecyl benzene sulfonate, 0.01-0.05% of perfluoroalkyl polyoxyethylene ether and the balance of deionized water; the adjuvant B comprises the following components in percentage by mass: 0.5-1% of silane coupling agent, 0.1-0.4% of alkyl trimethyl ammonium bromide, 0.01-0.1% of perfluoroalkyl polyoxyethylene ether, 2-5% of ethanol, 1-3% of ammonium persulfate and the balance of deionized water.
Further, the water is deionized water with the resistivity larger than 15M omega.
The application of the small-pyramid-shaped silicon wafer alkali polishing auxiliary agent in two-step polishing to obtain the small-size pyramid-shaped silicon wafer.
Further, the specific method comprises the following steps:
s1, soaking a silicon wafer in hydrofluoric acid and then performing two-step polishing;
s2, mixing the auxiliary agent A with an alkali aqueous solution to prepare a polishing agent A, and carrying out primary corrosion on the surface of the silicon wafer by using the polishing agent A;
and S3, mixing the auxiliary agent B with an alkali aqueous solution to prepare a polishing agent A, and carrying out secondary corrosion on the surface of the silicon wafer subjected to primary corrosion by using the polishing agent B to obtain the silicon wafer with the small-size pyramid-based structure on the surface.
Further, in the step S1, the concentration of the hydrofluoric acid is 45-50%, the usage volume ratio of the hydrofluoric acid on the silicon wafer is 10-30% (v/v%), and the soaking time is 15-60S.
Further, in the step S2, the alkali is NaOH or KOH, the concentration of the alkali in the polishing agent a is 1 to 4% (v/v%), and the concentration of the adjuvant a in the polishing agent a is 0.5 to 1% (v/v%).
Furthermore, the temperature of the first corrosion is 60-80 ℃, and the corrosion time is 6-9min.
Further, in the step S3, the base is NaOH or KOH, the concentration of the base in the polishing agent B is 2 to 8% (v/v%), and the concentration of the adjuvant B in the polishing agent B is 0.5 to 1% (v/v%).
Further, the temperature of the secondary corrosion is 60-80 ℃, and the corrosion time is 1-6min.
Further, the pyramid base size of the silicon wafer obtained by two-step polishing is 1-10 μm.
The invention has the following beneficial effects:
the polishing auxiliary agent disclosed by the invention is added with a component capable of adsorbing the surface of silicon dioxide, so that the corrosion effect of alkali on the silicon dioxide in the polishing process is inhibited, the non-polished surface of the silicon wafer is protected from being corroded through chemical adsorption and physical adsorption, the corrosion amount of the polished surface is controllable, the size of the pyramid base after corrosion is small, and the uniformity and the flatness of the polished surface after corrosion are high. The polishing auxiliary agent comprises an auxiliary agent A and an auxiliary agent B, both of which comprise a silane coupling agent, and silicon hydroxyl groups hydrolyzed by the silane coupling agent can be condensed with silicon dioxide surface hydroxyl groups and adsorbed to the silicon oxide surface through chemical bonds, so that long-chain carbon chains are grafted on the silicon oxide surface to prevent alkali from corroding the silicon oxide. The auxiliary agent B comprises alkyl trimethyl ammonium bromide, the surface of the soaked silicon wafer is negatively charged, and the alkyl trimethyl ammonium bromide serving as a cationic surfactant can be adsorbed on the surface of the silicon wafer through coulomb force to protect the silicon wafer from being corroded.
The polishing auxiliary agent is applied to two-step polishing of silicon wafers, and uniform and flat silicon wafers with small pyramid base size can be obtained. The silicon wafer is polished by utilizing the anisotropy of alkali in the polishing process, so that the uniformity and the flatness of a polished surface can be improved, and the surface roughness is reduced. The first step of etching is carried out by using the assistant A, the etching amount can be controlled within the range of 0.05-0.2wt%, and the pyramid structure on the surface of the silicon wafer is reserved. And (4) carrying out low-step corrosion by using the auxiliary agent B, removing the pyramid structure to enable the surface to be smooth, and enabling the size of the polished pyramid base to be small.
Drawings
FIG. 1 is a graph showing the morphology of a silicon wafer before polishing in a two-step polishing process in accordance with example 1 of the present invention;
FIG. 2 shows the morphology of a silicon wafer after the first etching step in the two-step polishing of example 1 of the present invention;
FIG. 3 shows the silicon wafer morphology after etching for 1min in the second step, which is applied in two-step polishing in example 1 of the present invention;
FIG. 4 shows the silicon wafer morphology after the second etching step for 1.5min, in which the embodiment 1 of the present invention is applied to the two-step polishing;
FIG. 5 shows the silicon wafer morphology after the second etching step for 2min, in which example 1 of the present invention is applied to two-step polishing;
FIG. 6 shows the silicon wafer morphology after the second etching step for 3min, in which the embodiment 1 of the present invention is applied to two-step polishing;
FIG. 7 shows the silicon wafer morphology after the second etching step for 4min, in the case of the application of embodiment 1 of the present invention to two-step polishing;
FIG. 8 shows the silicon wafer morphology after the second etching step for 6min, as applied to the two-step polishing in example 1 of the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples, which are only preferred embodiments of the present invention and are not intended to limit the present invention.
The water used in the embodiments of the present invention is deionized water having a resistivity greater than 15M Ω.
Example 1
An alkali polishing assistant for small tower silicon chips comprises an assistant A and an assistant B; comprises an adjuvant A and an adjuvant B; the adjuvant A comprises the following components in percentage by mass: 0.25% of silane coupling agent, 3% of ethanol, 0.15% of gelatin, 2% of n-butyl alcohol, 0.15% of sodium dodecyl benzene sulfonate, 0.25% of perfluoroalkyl polyoxyethylene ether and the balance of deionized water; the adjuvant B comprises the following components in percentage by mass: 0.75% of silane coupling agent, 0.3% of alkyl trimethyl ammonium bromide, 0.5% of perfluoroalkyl polyoxyethylene ether, 3% of ethanol, 2% of ammonium persulfate and the balance of deionized water.
The application of the small tower-shaped silicon wafer alkali polishing auxiliary agent in two-step polishing of silicon wafers comprises the following steps:
s1, soaking a silicon wafer for 30s by using 49% hydrofluoric acid, and performing two-step polishing after soaking by using a volume ratio of 15% (v/v%);
s2, mixing an auxiliary agent A with a NaOH solution with the concentration of 3% (v/v%) to prepare a polishing agent A, wherein the concentration of the auxiliary agent is 0.8% (v/v%), and carrying out primary corrosion on the surface of the silicon wafer by using the polishing agent A, the corrosion temperature is 75 ℃, and the corrosion time is 8min;
s3, mixing the auxiliary agent B with 6% (v/v%) NaOH solution to obtain a polishing agent B, wherein the concentration of the auxiliary agent B is 0.8% (v/v%), performing secondary corrosion on the surface of the silicon wafer subjected to primary corrosion by using the polishing agent B, the corrosion temperature is 75 ℃, the corrosion time is 1-6min, and the pyramid-based structure size on the surface of the silicon wafer is controllable within the range of 1-10 mu m.
The surface topography of the silicon wafer before polishing is shown in figure 1, and the surface of the monocrystalline silicon wafer after texture surface making has a pyramid structure with the size of 2-4 mu m. The surface appearance of the silicon wafer after the first-step corrosion is shown in fig. 2, and the pyramid structure is well reserved on the surface of the silicon wafer. The surface appearance of the silicon wafer after the second step of corrosion for 1min is shown in figure 3, and the pyramid base size on the surface of the silicon wafer is about 1 μm. The surface topography of the silicon wafer after the second etching for 1.5min is shown in FIG. 4, and the pyramid base size on the surface of the silicon wafer is about 1-2 μm. The surface topography of the silicon wafer after the second etching for 2min is shown in FIG. 5, and the pyramid base size on the surface of the silicon wafer is about 2-3 μm. The surface topography of the silicon wafer after 3min of the second step of etching is shown in FIG. 6, and the pyramid base size on the surface of the silicon wafer is about 3-4 μm. The surface topography of the silicon wafer after the second etching for 4min is shown in FIG. 7, and the pyramid base size on the surface of the silicon wafer is about 5-6 μm. The surface topography of the silicon wafer after the second etching for 6min is shown in FIG. 8, and the pyramid base size on the surface of the silicon wafer is about 8-10 μm.
Example 2
An alkali polishing assistant for small tower silicon chips comprises an assistant A and an assistant B; the adjuvant A comprises the following components in percentage by mass: 0.1-0.5% of silane coupling agent, 2-5% of ethanol, 0.05-0.2% of gelatin, 1-3% of n-butyl alcohol, 0.05-0.2% of sodium dodecyl benzene sulfonate, 0.01-0.05% of perfluoroalkyl polyoxyethylene ether and the balance of deionized water; the adjuvant B comprises the following components in percentage by mass: 0.5-1% of silane coupling agent, 0.1-0.4% of alkyl trimethyl ammonium bromide, 0.01-0.1% of perfluoroalkyl polyoxyethylene ether, 2-5% of ethanol, 1-3% of ammonium persulfate and the balance of deionized water.
The application of the small tower-shaped silicon wafer alkali polishing auxiliary agent in two-step polishing of silicon wafers comprises the following steps:
s1, soaking a silicon wafer for 15s by using 49% hydrofluoric acid, and performing two-step polishing after soaking by using the hydrofluoric acid with the volume ratio of 10% (v/v%);
s2, mixing the adjuvant A with a KOH solution with the concentration of 1% (v/v%) to prepare a polishing agent A, wherein the concentration of the adjuvant is 0.5% (v/v%), and carrying out primary corrosion on the surface of the silicon wafer by using the polishing agent A at the corrosion temperature of 60 ℃ for 9min;
s3, mixing the assistant B with a KOH solution with the concentration of 8% (v/v%) to prepare a polishing agent B, wherein the concentration of the assistant B is 1% (v/v%), performing secondary corrosion on the surface of the silicon wafer subjected to primary corrosion by using the polishing agent B, the corrosion temperature is 70 ℃, the corrosion time is 5min, and the obtained surface of the silicon wafer has a pyramid-based structure with the size of 7-8 microns.
Example 3
An alkali polishing assistant for small tower silicon chips comprises an assistant A and an assistant B; the adjuvant A comprises the following components in percentage by mass: 0.1-0.5% of silane coupling agent, 2-5% of ethanol, 0.05-0.2% of gelatin, 1-3% of n-butyl alcohol, 0.05-0.2% of sodium dodecyl benzene sulfonate, 0.01-0.05% of perfluoroalkyl polyoxyethylene ether and the balance of deionized water; the adjuvant B comprises the following components in percentage by mass: 0.5-1% of silane coupling agent, 0.1-0.4% of alkyl trimethyl ammonium bromide, 0.01-0.1% of perfluoroalkyl polyoxyethylene ether, 2-5% of ethanol, 1-3% of ammonium persulfate and the balance of deionized water.
The application of the small tower-shaped silicon wafer alkali polishing auxiliary agent in two-step polishing of silicon wafers comprises the following steps:
s1, soaking a silicon wafer for 30s by using 49% hydrofluoric acid, and performing two-step polishing after soaking by using a volume ratio of 30% (v/v%);
s2, mixing an auxiliary agent A with a NaOH solution with the concentration of 4% (v/v%) to prepare a polishing agent A, wherein the concentration of the auxiliary agent is 1% (v/v%), and carrying out primary corrosion on the surface of the silicon wafer by using the polishing agent A, the corrosion temperature is 80 ℃, and the corrosion time is 9min;
s3, mixing the auxiliary agent B with a KOH solution with the concentration of 2 percent (v/v percent) to prepare a polishing agent B, wherein the concentration of the auxiliary agent B is 0.5 percent (v/v percent), performing secondary corrosion on the surface of the silicon wafer subjected to primary corrosion by using the polishing agent B, the corrosion temperature is 60 ℃, the corrosion time is 1min, and the surface of the obtained silicon wafer has a pyramid-based structure with the size of about 1-2 mu m.
Comparative example
The method for alkali polishing the small tower-shaped silicon chip comprises the following steps:
s1, soaking a silicon wafer for 30s by using 49% hydrofluoric acid, and polishing after soaking by using 15% (v/v%) of a volume ratio;
s2, using 6% (v/v%) NaOH solution as a polishing agent, and corroding the surface of the silicon wafer by using the polishing agent at the corrosion temperature of 75 ℃ for 4min, wherein the pyramid base size on the surface of the silicon wafer after corrosion is about 9-10 microns.
The alkali polishing auxiliary agent can effectively protect a non-polished surface from being corroded in the alkali polishing process, the alkali corrosion amount of the polished surface is controllable, and the polished silicon wafer pyramid base is small in size, uniform in surface and high in flatness.
Claims (8)
1. An application of an alkali polishing auxiliary agent for a small-size pyramid-based silicon wafer in two-step polishing to obtain a small-size pyramid-based silicon wafer is characterized by comprising the following steps:
s1, soaking a silicon wafer in hydrofluoric acid and then performing two-step polishing;
s2, mixing the auxiliary agent A with an alkali aqueous solution to prepare a polishing agent A, and carrying out primary corrosion on the surface of the silicon wafer by using the polishing agent A;
s3, mixing the auxiliary agent B with an alkali aqueous solution to prepare a polishing agent B, and carrying out secondary corrosion on the surface of the silicon wafer subjected to primary corrosion by using the polishing agent B to obtain a silicon wafer with a small-size pyramid-based structure on the surface;
the adjuvant A comprises the following components in percentage by mass: 0.1-0.5% of silane coupling agent, 2-5% of ethanol, 0.05-0.2% of gelatin, 1-3% of n-butyl alcohol, 0.05-0.2% of sodium dodecyl benzene sulfonate, 0.01-0.05% of perfluoroalkyl polyoxyethylene ether and the balance of deionized water; the adjuvant B comprises the following components in percentage by mass: 0.5-1% of silane coupling agent, 0.1-0.4% of alkyl trimethyl ammonium bromide, 0.01-0.1% of perfluoroalkyl polyoxyethylene ether, 2-5% of ethanol, 1-3% of ammonium persulfate and the balance of deionized water.
2. Use according to claim 1, wherein the water is deionized water having a resistivity greater than 15 Μ Ω.
3. The use according to claim 1, wherein in step S1, the concentration of hydrofluoric acid is 45-50%, the usage volume ratio of hydrofluoric acid on the silicon wafer is 10-30%, and the soaking time is 15-60S.
4. Use according to claim 1, characterised in that in step S2 the base is NaOH or KOH, the concentration of base in polishing agent a is between 1 and 4% and the concentration of adjuvant a in polishing agent a is between 0.5 and 1%.
5. The use according to claim 4, wherein the temperature of the first etching is 60-80 ℃ and the etching time is 6-9min.
6. Use according to claim 1, characterised in that in step S3 the base is NaOH or KOH, the concentration of base in polishing agent B is between 2 and 8% and the concentration of adjuvant B in polishing agent B is between 0.5 and 1%.
7. Use according to claim 6, characterized in that the secondary etching is carried out at a temperature of 60-80 ℃ and for a period of 1-6min.
8. Use according to any one of claims 1 to 7, wherein the silicon wafer obtained by the two-step polishing has a pyramid base size of 1 to 10 μm.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337596A (en) * | 2011-04-19 | 2012-02-01 | 上海晶太光伏科技有限公司 | Monocrystalline silicon solar cell alkali texturing assistant agent and its application |
| CN103205815A (en) * | 2013-05-03 | 2013-07-17 | 上海交通大学 | Solar energy mono-crystalline silicon piece flocking solution and application method thereof |
| CN105977343A (en) * | 2016-07-08 | 2016-09-28 | 合肥中南光电有限公司 | Monocrystalline silicon solar cell surface texture liquid having high stability and tannin extract and preparation method thereof |
| CN106928859A (en) * | 2015-12-31 | 2017-07-07 | 安集微电子科技(上海)有限公司 | A kind of chemical mechanical polishing liquid and its application |
| CN111560249A (en) * | 2020-05-26 | 2020-08-21 | 翟伟俊 | Preparation method of PERC battery alkali polishing additive |
| CN112111279A (en) * | 2020-08-13 | 2020-12-22 | 天津爱旭太阳能科技有限公司 | Additive for alkali polishing in solar cell preparation and polishing process |
| CN112309849A (en) * | 2020-09-30 | 2021-02-02 | 英利能源（中国）有限公司 | Method for etching and polishing single surface of silicon wafer |
| CN112813502A (en) * | 2020-12-30 | 2021-05-18 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
| CN113122148A (en) * | 2021-04-07 | 2021-07-16 | 云南合义德新材料有限公司 | Crystalline silicon alkali polishing additive and use method thereof |
| CN113136144A (en) * | 2021-03-18 | 2021-07-20 | 武汉风帆电化科技股份有限公司 | Polishing agent for rapid alkali polishing of crystal silicon wafer and application method thereof |
| CN113322008A (en) * | 2021-05-10 | 2021-08-31 | 南京卓胜自动化设备有限公司 | Single crystal alkali polishing additive, polishing solution and polishing method |
| CN113416547A (en) * | 2021-06-18 | 2021-09-21 | 常州时创能源股份有限公司 | Alkali corrosion auxiliary agent for cleaning winding-plated polycrystalline silicon and application thereof |
| CN113529173A (en) * | 2021-07-14 | 2021-10-22 | 西安蓝桥新能源科技有限公司 | Two-step texturing additive for preparing multilayer pyramid monocrystalline silicon textured surface and application thereof |
-
2021
- 2021-11-04 CN CN202111298362.XA patent/CN114133876B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337596A (en) * | 2011-04-19 | 2012-02-01 | 上海晶太光伏科技有限公司 | Monocrystalline silicon solar cell alkali texturing assistant agent and its application |
| CN103205815A (en) * | 2013-05-03 | 2013-07-17 | 上海交通大学 | Solar energy mono-crystalline silicon piece flocking solution and application method thereof |
| CN106928859A (en) * | 2015-12-31 | 2017-07-07 | 安集微电子科技(上海)有限公司 | A kind of chemical mechanical polishing liquid and its application |
| CN105977343A (en) * | 2016-07-08 | 2016-09-28 | 合肥中南光电有限公司 | Monocrystalline silicon solar cell surface texture liquid having high stability and tannin extract and preparation method thereof |
| CN111560249A (en) * | 2020-05-26 | 2020-08-21 | 翟伟俊 | Preparation method of PERC battery alkali polishing additive |
| CN112111279A (en) * | 2020-08-13 | 2020-12-22 | 天津爱旭太阳能科技有限公司 | Additive for alkali polishing in solar cell preparation and polishing process |
| CN112309849A (en) * | 2020-09-30 | 2021-02-02 | 英利能源（中国）有限公司 | Method for etching and polishing single surface of silicon wafer |
| CN112813502A (en) * | 2020-12-30 | 2021-05-18 | 常州高特新材料股份有限公司 | Monocrystalline silicon etching texturing additive and application thereof |
| CN113136144A (en) * | 2021-03-18 | 2021-07-20 | 武汉风帆电化科技股份有限公司 | Polishing agent for rapid alkali polishing of crystal silicon wafer and application method thereof |
| CN113122148A (en) * | 2021-04-07 | 2021-07-16 | 云南合义德新材料有限公司 | Crystalline silicon alkali polishing additive and use method thereof |
| CN113322008A (en) * | 2021-05-10 | 2021-08-31 | 南京卓胜自动化设备有限公司 | Single crystal alkali polishing additive, polishing solution and polishing method |
| CN113416547A (en) * | 2021-06-18 | 2021-09-21 | 常州时创能源股份有限公司 | Alkali corrosion auxiliary agent for cleaning winding-plated polycrystalline silicon and application thereof |
| CN113529173A (en) * | 2021-07-14 | 2021-10-22 | 西安蓝桥新能源科技有限公司 | Two-step texturing additive for preparing multilayer pyramid monocrystalline silicon textured surface and application thereof |
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