CN114128061A - 一种波导结构、集成光芯片及实现电学隔离的方法 - Google Patents
一种波导结构、集成光芯片及实现电学隔离的方法 Download PDFInfo
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- CN114128061A CN114128061A CN201980098441.0A CN201980098441A CN114128061A CN 114128061 A CN114128061 A CN 114128061A CN 201980098441 A CN201980098441 A CN 201980098441A CN 114128061 A CN114128061 A CN 114128061A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
一种波导结构、集成光芯片及实现电学隔离的方法，以解决集成光芯片中由于不同有源光器件的工作电压不同，导致集成光芯片中产生电学串扰、增加集成光芯片功耗的问题。该波导结构包括从下到上依次层叠设置的衬底、第一掺杂层、第二掺杂层以及第一波导芯层，第一波导芯层覆盖第二掺杂层的上表面的部分区域；其中，第二掺杂层包括上阻挡层和牺牲层，牺牲层位于上阻挡层和第一波导芯层之间，用于支撑上阻挡层。第二掺杂层内具有至少一个空腔，空腔沿着空腔的延伸方向贯穿第二掺杂层，第一波导芯层位于空腔的正上方，且空腔的延伸方向与第一波导芯层的延伸方向相互垂直，第一掺杂层与第二掺杂层的掺杂类型相反。
Description
PCT国内申请，说明书已公开。
Claims (14)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/099441 WO2021022476A1 (zh) | 2019-08-06 | 2019-08-06 | 一种波导结构、集成光芯片及实现电学隔离的方法 |
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| Publication Number | Publication Date |
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| CN114128061A true CN114128061A (zh) | 2022-03-01 |
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| CN201980098441.0A Pending CN114128061A (zh) | 2019-08-06 | 2019-08-06 | 一种波导结构、集成光芯片及实现电学隔离的方法 |
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| CN (1) | CN114128061A (zh) |
| WO (1) | WO2021022476A1 (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0457344A2 (en) * | 1990-05-18 | 1991-11-21 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| CN1261985A (zh) * | 1997-07-04 | 2000-08-02 | 艾利森电话股份有限公司 | 具有掩埋异质结构类型的激光二极管 |
| US20020008215A1 (en) * | 2000-04-28 | 2002-01-24 | Evans Gary A. | Grating-outcoupled surface-emitting lasers with flared gain regions |
| CN107230930A (zh) * | 2016-03-23 | 2017-10-03 | 华为技术有限公司 | 一种可调激光器及制备方法 |
| CN108141005A (zh) * | 2015-07-30 | 2018-06-08 | 奥普蒂脉冲公司 | 刚性高功率和高速激光网格结构 |
| CN108233181A (zh) * | 2017-12-28 | 2018-06-29 | 南京邮电大学 | 集成谐振光栅微腔的悬空GaN薄膜激光器及其制备方法 |
| CN108732667A (zh) * | 2017-04-17 | 2018-11-02 | 华为技术有限公司 | 一种超结构光栅和可调谐激光器 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7919349B2 (en) * | 2008-02-22 | 2011-04-05 | Alcatel-Lucent Usa Inc. | Photonic integration scheme |
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2019
- 2019-08-06 CN CN201980098441.0A patent/CN114128061A/zh active Pending
- 2019-08-06 WO PCT/CN2019/099441 patent/WO2021022476A1/zh active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0457344A2 (en) * | 1990-05-18 | 1991-11-21 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| CN1261985A (zh) * | 1997-07-04 | 2000-08-02 | 艾利森电话股份有限公司 | 具有掩埋异质结构类型的激光二极管 |
| US20020008215A1 (en) * | 2000-04-28 | 2002-01-24 | Evans Gary A. | Grating-outcoupled surface-emitting lasers with flared gain regions |
| CN108141005A (zh) * | 2015-07-30 | 2018-06-08 | 奥普蒂脉冲公司 | 刚性高功率和高速激光网格结构 |
| CN107230930A (zh) * | 2016-03-23 | 2017-10-03 | 华为技术有限公司 | 一种可调激光器及制备方法 |
| CN108732667A (zh) * | 2017-04-17 | 2018-11-02 | 华为技术有限公司 | 一种超结构光栅和可调谐激光器 |
| CN108233181A (zh) * | 2017-12-28 | 2018-06-29 | 南京邮电大学 | 集成谐振光栅微腔的悬空GaN薄膜激光器及其制备方法 |
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| WO2021022476A1 (zh) | 2021-02-11 |
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