CN114121647B - 一种提高化学机械研磨效率的方法 - Google Patents
一种提高化学机械研磨效率的方法 Download PDFInfo
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- CN114121647B CN114121647B CN202210077158.3A CN202210077158A CN114121647B CN 114121647 B CN114121647 B CN 114121647B CN 202210077158 A CN202210077158 A CN 202210077158A CN 114121647 B CN114121647 B CN 114121647B
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- grinding
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- 238000000227 grinding Methods 0.000 claims abstract description 198
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- 239000000654 additive Substances 0.000 claims abstract description 30
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- 239000007788 liquid Substances 0.000 claims description 38
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
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- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 4
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- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 claims description 3
- 229960004063 propylene glycol Drugs 0.000 claims description 3
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
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CN202210077158.3A CN114121647B (zh) | 2022-01-24 | 2022-01-24 | 一种提高化学机械研磨效率的方法 |
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CN202210077158.3A CN114121647B (zh) | 2022-01-24 | 2022-01-24 | 一种提高化学机械研磨效率的方法 |
Publications (2)
Publication Number | Publication Date |
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CN114121647A CN114121647A (zh) | 2022-03-01 |
CN114121647B true CN114121647B (zh) | 2022-04-22 |
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CN202210077158.3A Active CN114121647B (zh) | 2022-01-24 | 2022-01-24 | 一种提高化学机械研磨效率的方法 |
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Families Citing this family (1)
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CN117047653A (zh) * | 2022-05-06 | 2023-11-14 | 长鑫存储技术有限公司 | 化学机械研磨工艺方法与装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1402310A (zh) * | 2001-08-03 | 2003-03-12 | 联华电子股份有限公司 | 化学机械研磨的方法 |
CN101134286A (zh) * | 2006-08-31 | 2008-03-05 | 联华电子股份有限公司 | 复合式化学机械研磨法与浅沟槽隔离结构的制造方法 |
JP2016003278A (ja) * | 2014-06-17 | 2016-01-12 | 日立化成株式会社 | 研磨液、研磨液セット及び基体の研磨方法 |
CN106625203A (zh) * | 2016-11-11 | 2017-05-10 | 武汉新芯集成电路制造有限公司 | 化学机械研磨的方法 |
CN110462796A (zh) * | 2017-03-27 | 2019-11-15 | 日立化成株式会社 | 研磨液、研磨液套剂和研磨方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101961852B (zh) * | 2009-07-24 | 2012-06-27 | 中芯国际集成电路制造(上海)有限公司 | 层间介质层的化学机械研磨方法 |
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2022
- 2022-01-24 CN CN202210077158.3A patent/CN114121647B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1402310A (zh) * | 2001-08-03 | 2003-03-12 | 联华电子股份有限公司 | 化学机械研磨的方法 |
CN101134286A (zh) * | 2006-08-31 | 2008-03-05 | 联华电子股份有限公司 | 复合式化学机械研磨法与浅沟槽隔离结构的制造方法 |
JP2016003278A (ja) * | 2014-06-17 | 2016-01-12 | 日立化成株式会社 | 研磨液、研磨液セット及び基体の研磨方法 |
CN106625203A (zh) * | 2016-11-11 | 2017-05-10 | 武汉新芯集成电路制造有限公司 | 化学机械研磨的方法 |
CN110462796A (zh) * | 2017-03-27 | 2019-11-15 | 日立化成株式会社 | 研磨液、研磨液套剂和研磨方法 |
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Effective date of registration: 20220914 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Patentee after: Guangdong Dawan District integrated circuit and System Application Research Institute Address before: Room 1601-1607, 85 Xiangxue Avenue, Huangpu District, Guangzhou, Guangdong 510000 Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Patentee before: Guangdong Dawan District integrated circuit and System Application Research Institute |
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