CN114108084A - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
CN114108084A
CN114108084A CN202110942163.1A CN202110942163A CN114108084A CN 114108084 A CN114108084 A CN 114108084A CN 202110942163 A CN202110942163 A CN 202110942163A CN 114108084 A CN114108084 A CN 114108084A
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Prior art keywords
substrate
metal
substrate processing
wafer
silicon film
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Chinese (zh)
Inventor
香川兴司
关口贤治
米泽周平
铃木大介
竹泽由裕
松原义久
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The invention provides a substrate processing method and a substrate processing apparatus for appropriately crystallizing a silicon film and growing the crystal. The substrate processing method is a substrate processing method for crystallizing a silicon film by heat treatment and growing the crystal, and includes: a holding step of holding the substrate on which the silicon film is formed before the heat treatment; and an adhesion step of supplying a solution containing a metal to the substrate held in the holding step so that the metal content is 1.0X 1010[ atoms/cm ]2]Above and 1.0X 1020[ atoms/cm ]2]The amount of adhesion in the following range is adhered to the surface of the silicon film.

Description

Substrate processing method and substrate processing apparatus
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus.
Background
Patent document 1 discloses a technique of forming a metal film as a catalyst on the surface of a silicon film and then crystallizing the silicon film by heat treatment.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2008-243975
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a technique capable of appropriately crystallizing a silicon film and growing the crystal.
Technical solution for solving technical problem
A substrate processing method according to an embodiment of the present invention is a substrate processing method for crystallizing a silicon film by heat treatment and growing a crystal, including: a holding step of holding the substrate on which the silicon film is formed before the heat treatment; and an adhesion step of supplying a solution containing a metal to the substrate held in the holding step so that the metal is 1.0X 10 times as large as the substrate10[ atoms/cm ]2]Above and 1.0X 1020[ atoms/cm ]2]The amount of adhesion in the following range is adhered to the surface of the silicon film.
Effects of the invention
According to the present invention, a silicon film can be crystallized appropriately to grow a crystal.
Drawings
Fig. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment.
Fig. 2 is a diagram showing a schematic configuration of the processing unit 1 according to the embodiment.
Fig. 3 is a diagram showing a schematic configuration of the processing unit 2 according to the embodiment.
Fig. 4 is a flowchart showing a flow of substrate processing performed by the processing unit 1 of the embodiment.
Fig. 5 is a view showing an example of measurement results of the crystal size of the silicon film by changing the amount of metal deposited in the substrate processing performed by the processing unit 1.
Fig. 6 is a flowchart showing a flow of substrate processing performed by the processing unit 2 of the embodiment.
Description of the reference numerals
W wafer
1 substrate processing system
4 control device
4A control part
4B storage unit
16 st processing unit
30 substrate holding mechanism
40 treating liquid supply part
17 processing unit 2
130 substrate holding mechanism
140 supply part.
Detailed Description
Hereinafter, various embodiments will be described in detail with reference to the drawings. The technique of the present invention is not limited to the following embodiments.
When a metal serving as a catalyst is attached to the surface of the silicon film and then heat treatment is performed, the metal diffuses excessively into the silicon film, and as a result, the excessively diffused metal may inhibit crystallization of the silicon film and grow the crystal. Therefore, it is desired to appropriately crystallize a silicon film and grow the crystal.
(embodiment mode)
< Structure of substrate processing System >
Fig. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. Hereinafter, in order to clarify the positional relationship, an X axis, a Y axis, and a Z axis orthogonal to each other are specified, and the positive Z axis direction is taken as the vertically upward direction.
As shown in fig. 1, a substrate processing system 1 includes an in-out station 2 and a processing station 3. The in-and-out station 2 and the processing station 3 are disposed adjacently.
The carry-in and carry-out station 2 includes a carrier placing portion 11 and a conveying portion 12. A plurality of carriers C for horizontally accommodating a plurality of substrates, in this embodiment, semiconductor wafers W (hereinafter, referred to as wafers W) are placed on the carrier placement unit 11. A silicon film is formed on the surface of the wafer W.
The transport unit 12 is provided adjacent to the carrier placement unit 11, and includes a substrate transport device 13 and a transfer unit 14. The substrate transport apparatus 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal direction and the vertical direction and rotating about the vertical axis, and transfers the wafer W between the carrier C and the delivery portion 14 using the wafer holding mechanism.
The processing station 3 is disposed adjacent to the conveying section 12. The processing station 3 includes a conveying section 15, a plurality of processing units 1 16, and a plurality of processing units 2 17. The plurality of processing units 1, 16 and the plurality of processing units 2, 17 are arranged side by side on both sides of the conveying section 15.
The conveying section 15 is internally provided with a substrate conveying device 18. The substrate transport apparatus 18 has a wafer holding mechanism for holding the wafer W. The substrate transfer device 18 is capable of moving in the horizontal direction and the vertical direction and rotating about the vertical axis, and transfers the wafer W between the delivery portion 14 and the 1 st processing unit 16 or the 2 nd processing unit 17 using the wafer holding mechanism.
The 1 st processing unit 16 performs a predetermined substrate processing on the wafer W conveyed by the substrate conveyor 18. In the present embodiment, the 1 st processing unit 16 attaches a metal as a catalyst to the surface of the silicon film before performing heat treatment for crystallizing and growing the silicon film on the wafer W.
The 2 nd processing unit 17 performs a predetermined process on the wafer W conveyed by the substrate conveyor 18. In the present embodiment, the 2 nd processing unit 17 removes a metal (for example, a metal silicide) remaining on the surface of the silicon film after performing a heat treatment for crystallizing and growing the silicon film on the wafer W.
In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 4A and a storage unit 4B. The storage unit 4B stores programs for controlling various processes executed in the substrate processing system 1. The control unit 4A reads and executes the program stored in the storage unit 4B to control the operation of the substrate processing system 1.
The program may be stored in a computer-readable storage medium, and may be installed from the storage medium to the storage unit 4B of the control device 4. Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.
In the substrate processing system 1 configured as described above, first, the substrate transport apparatus 13 of the carry-in/out station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and places the taken-out wafer W on the delivery unit 14. The wafer W placed on the transfer portion 14 is taken out of the transfer portion 14 by the substrate transfer device 18 of the processing station 3 and is carried into the 1 st processing unit 16.
The wafer W carried into the 1 st processing unit 16 is processed by the 1 st processing unit 16, and then carried out from the 1 st processing unit 16 by the substrate transfer device 18 to be placed on the delivery part 14. Then, the processed wafer W placed on the delivery portion 14 is returned to the carrier C of the carrier placement portion 11 by the substrate transport apparatus 13.
After the processed wafers W are returned to the carrier C, the carrier C is transported by a predetermined transport device to an annealing device disposed outside the substrate processing system 1. Then, the wafer W is heat-treated in the annealing apparatus. The carrier C that stores the wafers W after the heat treatment is returned to the substrate processing system 1 by a predetermined transfer device.
Thereafter, in the substrate processing system 1, the substrate transfer device 13 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and places the taken-out wafer W on the delivery unit 14. The wafer W placed on the transfer portion 14 is taken out of the transfer portion 14 by the substrate transfer device 18 of the processing station 3 and is carried into the 2 nd processing unit 17.
The wafer W carried into the 2 nd processing unit 17 is processed by the 2 nd processing unit 17, and then carried out from the 2 nd processing unit 17 by the substrate transfer device 18 to be placed on the delivery part 14. Then, the processed wafer W placed on the transfer portion 14 is returned to the carrier C of the carrier placement portion 11 by the substrate transport apparatus 13.
< Structure of processing Unit 1 >
Next, a schematic configuration of the 1 st processing unit 16 will be described with reference to fig. 2. Fig. 2 is a diagram showing a schematic configuration of the processing unit 16 of embodiment 1.
As shown in fig. 2, the 1 st processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing liquid supply portion 40, a cleaning liquid supply portion 50, a lower portion supply portion 60, and a recovery cup 70.
The chamber 20 houses the substrate holding mechanism 30, the processing liquid supply unit 40, the cleaning liquid supply unit 50, the lower supply unit 60, and the recovery cup 70. An FFU (Fan Filter Unit) 21 is provided at the top of the chamber 20. FFU21 forms a down flow within chamber 20.
FFU21 is connected to downflow gas supply 23 via valve 22. The FFU21 releases downflow gas (e.g., nitrogen or dry gas) supplied from downflow gas supply 23 into the chamber 20.
The substrate processing section 30 includes a holding section 31, a column section 32, and a driving section 33. The holding portion 31 holds the wafer W horizontally. A plurality of grip portions 31a for gripping the peripheral edge portion of the wafer W are provided on the upper surface of the holding portion 31. The wafer W is held horizontally while being slightly spaced from the upper surface of the holding portion 31 by the grip portion 31 a. The wafer W is held by the holding portion 31 with the surface on which the silicon film is formed facing upward. The support portion 32 is a member extending in the vertical direction, and supports the holding portion 31 from below. The driving unit 33 rotates the column portion 32 about the vertical axis. The substrate holding mechanism 30 rotates the column part 32 using the driving part 33 to rotate the holding part 31 supported by the column part 32, thereby rotating the wafer W held by the holding part 31.
The processing liquid supply unit 40 supplies various processing liquids to the wafer W held by the substrate holding mechanism 30. The treatment liquid supply unit 40 is connected to a DHF (dilute hydrofluoric acid) supply source 42a via a valve 41 a. The treatment liquid supply unit 40 is connected to an SC1 supply source 42b via a valve 41 b. DHF supplied from the DHF supply source 42a and SC1 (a mixed liquid of ammonia water, hydrogen peroxide, and water) supplied from the SC1 supply source 42b are hydrophilizing treatment liquids for hydrophilizing the surface of the silicon film on the wafer W.
The treatment liquid supply unit 40 is connected to a metal solution supply source 44 and a DIW (DeIonized Water) supply source 45 via a valve 41c and a dilution unit 43. The metal-containing solution (hereinafter, appropriately referred to as "metal solution") supplied from the metal solution supply source 44 is a treatment liquid for adhering metal to the surface of the silicon film on the wafer W. As the metal contained in the metal solution, for example, at least one of Ni, Pd, Ag, Au, Sn, Sb, Cu, Cd, Al, Co, Pt, Mo, Ti, W, and Cr can be used. As the solvent of the metal solution, for example, dilute nitric acid, pure water, or the like can be used. The DIW supplied from the DIW supply source 45 is a diluent for diluting the metal solution. Instead of DIW, IPA (isopropyl alcohol) may be used as the diluent. The metal solution supplied from the metal solution supply source 44 is diluted with DIW in the dilution unit 53, and then supplied from the treatment solution supply unit 40 to the wafer W.
In addition, from the viewpoint of promoting the adhesion of the metal to the surface of the silicon film by reducing the contact angle of the metal solution with respect to the wafer W, a mixed solution in which an organic solvent such as IPA is mixed with the metal solution may be supplied from the treatment solution supply unit 40 to the wafer W. In this case, instead of the metal solution supply source 44, a mixed solution supply source that supplies a mixed solution in which an organic solvent such as IPA is mixed with the metal solution may be used.
The processing liquid supply unit 40 is connected to a DIW supply source 42d via a valve 41 d. The DIW supplied from the DIW supply source 42d is a diluent for further diluting the metal solution diluted in the dilution unit 53. Instead of DIW, IPA may be used as a diluent. The DIW supplied from the DIW supply source 42d may be used as a cleaning liquid for cleaning the metal excessively adhering to the surface of the silicon film on the wafer W. The DIW supplied from the DIW supply source 42d may be used as a rinsing treatment liquid for removing the hydrophilization treatment liquid.
The cleaning liquid supply unit 50 supplies a cleaning liquid for cleaning the edge bevel portion of the wafer W held by the substrate holding mechanism 30. The edge bevel portion is a bevel portion formed on the peripheral edge portion of the wafer W. The cleaning liquid supply unit 50 is connected to an SC2 supply source 52a via a valve 51 a. SC2 (a mixed liquid of hydrochloric acid and hydrogen peroxide) supplied from SC2 supply source 52a is a cleaning liquid for cleaning the edge bevel portion of wafer W. Instead of SC2, hydrofluoric acid, diluted hydrochloric acid, SPM (mixed solution of sulfuric acid and hydrogen peroxide), or aqua regia (mixed solution of hydrochloric acid 3: nitric acid 1) may be used as the cleaning liquid.
The cleaning liquid supply unit 50 is connected to a DIW supply source 52b via a valve 51 b. The DIW supplied from the DIW supply source 52b is a rinsing process liquid for removing the cleaning liquid remaining on the edge bevel portion of the wafer W.
The lower supply portion 60 supplies a cleaning liquid for cleaning the back surface of the wafer W held by the substrate holding mechanism 30. The back surface is a surface of the wafer W opposite to the surface on which the silicon film is formed. The lower supply portion 60 is inserted through the hollow portions of the holding portion 31 and the column portion 32. A flow path extending in the vertical direction is formed inside the lower supply portion 60. The flow path is connected to the SC2 supply source 62a via a valve 61 a. SC2 supplied from SC2 supply source 62a is a cleaning liquid for cleaning the back surface of wafer W. Instead of SC2, hydrofluoric acid, diluted hydrochloric acid, SPM, or aqua regia may be used as the cleaning liquid.
The lower supply portion 60 is connected to a DIW supply source 62b via a valve 61 b. The DIW supplied from the DIW supply source 62b is a rinsing process liquid for removing the cleaning liquid remaining on the back surface of the wafer W.
The recovery cup 70 is disposed so as to surround the holding portion 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding portion 31. A liquid discharge port 71 is formed in the bottom of the collection cup 70, and the processing liquid collected in the collection cup 70 is discharged from the liquid discharge port 71 to the outside of the 1 st processing unit 16. Further, an exhaust port 72 for exhausting the gas supplied from FFU21 to the outside of the 1 st processing unit 16 is formed in the bottom of the recovery cup 70.
< Structure of processing Unit 2 >
Next, a schematic configuration of the 2 nd processing unit 17 will be described with reference to fig. 3. Fig. 3 is a diagram showing a schematic configuration of the processing unit 17 of embodiment 2.
As shown in fig. 3, the 2 nd processing unit 17 includes a chamber 120, a substrate holding mechanism 130, a supply part 140, and a recovery cup 150.
The chamber 120 houses the substrate holding mechanism 130, the supply part 140, and the recovery cup 150. The wafer W heat-treated in the annealing apparatus is fed into the chamber 120. On the surface of the silicon film of the wafer W heat-treated by the annealing apparatus, a metal which becomes a silicide in the heat treatment (i.e., a metal silicide) remains. The FFU121 is disposed at the top of the chamber 120. FFU121 creates a down flow within chamber 120.
FFU121 is connected to downflow gas supply 123 via valve 122. The FFU121 discharges a downflow gas (e.g., nitrogen or a dry gas) supplied from a downflow gas supply source 123 into the chamber 120.
The substrate holding mechanism 130 includes a holding portion 131, a column portion 132, and a driving portion 133. The holding portion 131 horizontally holds the wafer W. The wafer W is held by the holding portion 131 in a state where the surface on which the silicon film is formed is directed upward. The support portion 132 is a member extending in the vertical direction, and supports the holding portion 131 from below. The driving unit 133 rotates the support column 132 about the vertical axis. The substrate holding mechanism 130 rotates the column part 132 using the driving part 133 to rotate the holding part 131 supported by the column part 132, thereby rotating the wafer W held by the holding part 131.
The supply unit 140 supplies the processing liquid to the wafer W held by the substrate holding mechanism 130. The supply unit 140 is connected to an SC2 supply source 142a via a valve 141 a. SC2 supplied from SC2 supply source 142a is a cleaning liquid for removing a metal (for example, metal silicide) remaining on the surface of the silicon film. As a cleaning liquid for removing the metal remaining on the surface of the silicon film, SPM or aqua regia may be used instead of SC 2.
The supply unit 140 is connected to a DIW supply source 142b via a valve 141 b. The DIW supplied from the DIW supply source 142b is a rinsing processing liquid for removing the cleaning liquid remaining on the surface of the silicon film.
The recovery cup 150 is disposed so as to surround the holding portion 131, and collects the processing liquid scattered from the wafer W by the rotation of the holding portion 131. A liquid discharge port 151 is formed in the bottom of the collection cup 150, and the processing liquid collected in the collection cup 150 is discharged from the liquid discharge port 151 to the outside of the 2 nd processing unit 17. Further, an exhaust port 152 for exhausting the gas supplied from the FFU121 to the outside of the 2 nd processing unit 17 is formed in the bottom of the recovery cup 150.
< substrate treatment by the treatment Unit 1 >
Next, referring to fig. 4, the substrate processing performed by the 1 st processing unit 16 will be described. Fig. 4 is a flowchart showing a flow of substrate processing performed by the processing unit 16 of embodiment 1. Each process shown in fig. 4 is executed under the control of the control unit 4A.
As shown in fig. 4, first, the substrate transfer device 18 transfers the wafer W into the chamber 20 of the process unit 1 16 (step S101). The wafer W is held by the holding portion 31 with the surface on which the silicon film is formed facing upward. Thereafter, the driving unit 33 rotates the holding unit 31. Thereby, the wafer W rotates together with the holding portion 31.
Next, in the 1 st processing unit 16, a hydrophilization process is performed (step S102). In the hydrophilization treatment, the treatment liquid supply unit 40 is positioned above the center of the wafer W. Thereafter, the valve 41a is opened for a predetermined time to supply DHF as a hydrophilization treatment liquid to the front surface of the wafer W. The DHF supplied to the wafer W is diffused over the entire surface of the silicon film on the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the surface of the silicon film on the wafer W is hydrophilized. After that, the valve 41d is opened for a predetermined time to supply DIW as a processing liquid for rinsing to the front surface of the wafer W. The DIW supplied to the wafer W is diffused over the entire surface of the silicon film on the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thus, DHF remaining on the surface of the wafer W is washed away by DIW. Thereafter, the valve 41b is opened for a predetermined time to supply SC1 as a hydrophilization treatment liquid to the front surface of the wafer W. The SC1 supplied to the wafer W is diffused over the entire surface of the silicon film on the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the surface of the silicon film on the wafer W is further hydrophilized. After that, the valve 41d is opened for a predetermined time to supply DIW as a processing liquid for rinsing to the front surface of the wafer W. The DIW supplied to the wafer W is diffused over the entire surface of the silicon film on the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thus, SC1 remaining on the surface of the wafer W is washed away by DIW.
Next, the 1 st processing unit 16 performs an adhesion process (step S103). In the adhesion process, the valves 41c and 41d are opened for a predetermined time to supply the metal solution to the front surface of the wafer W. At this time, the metal solution is diluted by the DIW supplied from the DIW supply source 45 in the dilution unit 43, and further diluted by the DIW supplied from the DIW supply source 42d on the downstream side of the dilution unit 43, and then supplied to the front surface of the wafer W. In other words, in the adhesion process, before the metal solution is supplied to the wafer W, the metal solution is diluted stepwise with a plurality of Dilutions (DIW) to adjust the concentration of the metal contained in the metal solution. The concentration of the metal contained in the metal solution is, for example, 10[ ppm [ ]]Above 10000[ ppm]Within the following ranges. The metal solution supplied to the wafer W is diffused over the entire surface of the silicon film on the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thus, the metal is present at 1.0X 1010[ atoms/cm ]2]Above and 1.0X 1020[ atoms/cm ]2]The amount of adhesion in the following range is attached to the surface of the silicon film on the wafer W.
In the above-described adhesion treatment, when the concentration of the metal contained in the metal solution is a desired concentration by the first dilution in the dilution unit 43, the second dilution on the downstream side of the dilution unit 43 may be omitted.
In the above-described adhesion treatment, the 1 st processing unit 16 may fill the wafer W with the metal solution, and then increase the rotation speed of the wafer W for a predetermined time to spin off the metal solution on the wafer W. The metal solution is supplied by reducing the rotation speed of the wafer W for a predetermined time (or stopping the rotation of the wafer W for a predetermined time), thereby filling the metal solution. The amount of the metal solution supplied to the wafer W can be reduced by pouring the metal solution on the wafer W and then throwing off the metal solution.
In the above adhesion treatment, the 1 st processing unit 16 may supply the metal solution to the surface of the wafer W in the form of mist using 2 fluid nozzles or the like. In the above adhesion process, the 1 st processing unit 16 may perform a sweep process of moving the processing liquid supply unit 40 between the center portion and the outer peripheral portion of the wafer W to supply the metal solution to the surface of the wafer W. This can shorten the processing time of the adhesion process.
The 1 st processing unit 16 may supply a mixed liquid obtained by mixing a metal solution with an organic solvent such as IPA to the wafer W. This makes it possible to reduce the contact angle of the metal solution with respect to the wafer W, and to facilitate coating and diffusion of the metal solution on the surface of the silicon film on the wafer W. Therefore, adhesion of metal to the surface of the silicon film can be promoted. In addition, when the mixed solution obtained by mixing the organic solvent with the metal solution is used, the 1 st processing unit 16 may supply the mixed solution to the wafer W so as to have a thickness of, for example, 100nm or more. This can further promote adhesion of the metal to the surface of the silicon film.
In the above adhesion treatment, it is preferable that the rotation speed of the wafer W is set to 1000[ rpm ] or less and the treatment time is set to 60 seconds or less.
Next, the 1 st processing unit 16 performs an adjustment process (step S104). In the adjustment process, the valve 41d is opened for a predetermined time to supply DIW as a cleaning liquid to the front surface of the wafer W. The DIW supplied to the wafer W is diffused over the entire surface of the silicon film on the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, a part of the metal attached to the surface of the silicon film on the wafer W is washed away by DIW. Thereby, the amount of metal deposited on the surface of the silicon film can be adjusted.
When the amount of metal deposited on the surface of the silicon film is already a desired amount at the time when the deposition process (step S103) is completed, the adjustment process (step S104) may be omitted.
Next, the 1 st processing unit 16 performs a drying process (step S105). In the drying process, the rotation speed of the wafer W is increased for a predetermined time, so that the DIW remaining on the wafer W is spun off to spin-dry the wafer W.
The drying method used in the above-described drying treatment is not limited to spin drying. For example, IPA drying may be performed in which the DIW is replaced with IPA and then the wafer W is spin-dried by pumping off the IPA. In addition, from the viewpoint of suppressing pattern collapse on the wafer W, the surface of the wafer W may be hydrophobized by supplying the hydrophobizing liquid to the wafer W before the IPA drying. In the above-described drying process, supercritical drying may be performed in which the DIW is replaced with IPA and then the wafer W is dried by bringing IPA into contact with a fluid in a supercritical state.
Next, in the processing unit 1, the edge bevel portion cleaning processing is performed (step S106). In the edge bevel portion cleaning process, the cleaning liquid supply portion 50 is positioned above the peripheral edge portion of the wafer W. Thereafter, the valve 51a is opened for a predetermined time to supply the SC2 as the cleaning liquid to the peripheral edge of the wafer W. Thereby, the edge bevel portion of the wafer W is inclined to remove metal from the edge bevel portion of the wafer W.
Next, in the 1 st processing unit 16, a flushing process is performed (step S107). In the rinsing process, the valve 51b is opened for a predetermined time to supply DIW as a processing liquid for rinsing to the peripheral edge of the wafer W. Thus, SC2 remaining on the edge bevel portion of the wafer W is washed away by DIW.
Next, the process unit 1 performs a drying process in the process unit 16 (step S108). In the drying process, the rotation speed of the wafer W is increased for a predetermined time to dry the wafer W.
Next, in the 1 st processing unit 16, a back surface cleaning process is performed (step S109). In the back surface cleaning process, the valve 61a is opened for a predetermined time to supply SC2 as a cleaning liquid to the back surface of the wafer W. The SC2 supplied to the back surface of the wafer W spreads over the entire back surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. Thereby, the back surface of the wafer W is cleaned to remove the metal from the back surface of the wafer W.
Next, in the 1 st processing unit 16, a flushing process is performed (step S110). In the rinsing process, the valve 61b is opened for a predetermined time to supply DIW as a processing liquid for rinsing to the back surface of the wafer W. Thus, SC2 remaining on the back surface of the wafer W is washed away by DIW.
Next, the 1 st processing unit 16 performs a drying process (step S111). In the drying process, the rotation speed of the wafer W is increased for a predetermined time to dry the wafer W.
Next, the 1 st processing unit 16 performs a sending-out process (step S112). In the send-out process, after the rotation of the wafer W is stopped, the wafer W is sent out from the 1 st processing unit 16. The wafers W sent out from the 1 st processing unit 16 are returned to the carrier C of the carrier placement unit 11, and then transported to an annealing apparatus disposed outside the substrate processing system 1. Then, the wafer W is heat-treated in the annealing apparatus. The treatment time of the heat treatment is, for example, 2 to 24 hours. By heat-treating the wafer W, the metal attached to the surface of the silicon film on the wafer W diffuses into the silicon film to become a silicide. Thereby, the silicon film is crystallized from the metal to be a silicide (i.e., metal silicide) and the crystal is grown. The wafers W subjected to the heat treatment are stored in the carrier C and then returned to the substrate processing system 1.
Here, the relationship between the amount of metal deposited and the crystallization of the silicon film in the substrate treatment performed by the 1 st processing unit 16 was evaluated. Fig. 5 is a view showing an example of a measurement result of measuring the crystal size of the silicon film by changing the amount of adhesion of the metal in the substrate processing performed by the 1 st processing unit 16. The metal used is Ni.
As can be seen from FIG. 5, the amount of metal deposited on the surface of the silicon film was 1.0X 1010[ atoms/cm ]2]Above and 1.0X 1020[ atoms/cm ]2]In the following range, a crystal size ratio of 0[ μm ] was obtained]Large silicon films. In particular, the amount of metal deposited on the surface of the silicon film was 1.0E13[ atoms/cm ]2]Above and 1.0E16[ atom/cm ]2]In the case of the following range, the crystal size is about 0.5[ mu ] m]The above. Thus, it was confirmed that the silicon film was properly crystallized and the junction was formedFrom the viewpoint of crystal growth, the amount of metal deposited is preferably in the following range. That is, the amount of metal deposited is preferably 1.0X 1010[ atoms/cm ]2]Above and 1.0X 1020[ atoms/cm ]2]More preferably in the range of 1.0E13[ atom/cm ]2]Above and 1.0E16[ atom/cm ]2]Within the following ranges.
< substrate treatment by the treatment Unit No. 2 >
Next, referring to fig. 6, the substrate processing performed by the 2 nd processing unit 17 will be described. Fig. 6 is a flowchart showing a flow of substrate processing performed by the processing unit 17 of the 2 nd embodiment. Each process shown in fig. 6 is executed under the control of the control unit 4A.
As shown in fig. 6, first, the substrate transfer device 18 transfers the wafer W into the chamber 120 of the 2 nd processing unit 17 (step S201). The wafer W thermally treated in the annealing apparatus is carried into the chamber 120. On the surface of the silicon film of the wafer W heat-treated by the annealing apparatus, a metal which becomes a silicide in the heat treatment (i.e., a metal silicide) remains. The wafer W is held by the holding portion 131 in a state where the surface on which the silicon film is formed is directed upward. Thereafter, the holding portion 131 is rotated by the driving portion 133. Thereby, the wafer W rotates together with the holder 131.
Next, the process unit 2 performs a removal process (step S202). In the removal process, the supply unit 140 is located above the center of the wafer W. Thereafter, the valve 141a is opened for a predetermined time to supply the SC2 as the cleaning liquid to the front surface of the wafer W. The SC2 supplied to the wafer W is diffused over the entire surface of the silicon film on the wafer W by the centrifugal force accompanying the rotation of the wafer W. This enables the metal (e.g., metal silicide) remaining on the surface of the silicon film to be removed.
Next, in the processing unit 2 17, a flushing process is performed (step S203). In the rinsing process, the valve 141b is opened for a predetermined time to supply DIW as a processing liquid for rinsing to the front surface of the wafer W. The DIW supplied to the wafer W is diffused over the entire surface of the silicon film on the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thus, SC2 remaining on the surface of the wafer W is washed away by DIW.
Next, in the processing unit 2 17, a drying process is performed (step S204). In the drying process, the rotation speed of the wafer W is increased for a predetermined time to dry the wafer W.
Next, the process unit 2 performs a sending process (step S205). In the send-out process, after the rotation of the wafer W is stopped, the wafer W is sent out from the 2 nd processing unit 17.
< effects >
The substrate processing method of an embodiment is a substrate processing method for crystallizing a silicon film by heat treatment and growing the crystal, and includes a holding step and an adhesion step. The holding step holds the substrate (wafer W, for example) on which the silicon film is formed before the heat treatment. The adhesion step is carried out by supplying a solution containing a metal to the substrate held in the holding step so that the metal content is 1.0X 1010[ atoms/cm ]2]Above and 1.0X 1020[ atoms/cm ]2]The amount of adhesion in the following range is adhered to the surface of the silicon film. Therefore, according to the embodiment, a silicon film can be appropriately crystallized and a crystal can be grown.
In addition, in the deposition step, before the metal-containing solution is supplied to the substrate, the metal-containing solution may be diluted with a diluent to adjust the concentration of the metal contained in the solution. Thus, according to the embodiment, the amount of metal deposited on the surface of the silicon film can be adjusted to adjust the crystal size of the silicon film to a desired size.
In the adhesion step, the solution may be diluted stepwise by a plurality of diluents to adjust the concentration of the metal contained in the solution. Thus, according to the embodiment, the amount of metal adhering to the surface of the silicon film can be adjusted more densely, and the accuracy of adjustment of the crystal size of the silicon film can be improved.
The concentration of the metal contained in the solution may be in the range of 10 ppm to 10000 ppm. Thus, according to the embodiment, the amount of adhesion of the metal to the surface of the silicon film can be optimized to adjust the crystal size of the silicon film to a desired size.
The substrate treatment method according to the embodiment may further include a hydrophilization step. The hydrophilization step hydrophilizes the surface of the silicon film. In the adhesion step, a solution containing a metal may be supplied to the substrate in a state where the surface of the silicon film is hydrophilized in the hydrophilization step. Therefore, according to the embodiment, the adhesion (adhesion) of the solution to the substrate can be improved to promote the adhesion of the metal to the surface of the silicon film.
In the deposition step, the substrate may be filled with a metal-containing solution, and then the metal-containing solution may be spun off. Therefore, according to the embodiment, the supply amount of the metal solution to the substrate can be reduced.
In the adhesion step, a mixed solution obtained by mixing an organic solvent with a metal-containing solution may be supplied to the substrate. In the adhesion step, a mixed solution obtained by mixing an organic solvent with a metal-containing solution may be supplied to the substrate processing tool so as to have a thickness of 100nm or more. Thus, according to embodiments, the contact angle of the solution with respect to the substrate can be reduced to promote adhesion of the metal to the surface of the silicon film.
The metal contained in the solution may include at least one of Ni, Pd, Ag, Au, Sn, Sb, Cu, Cd, Al, Co, Pt, Mo, Ti, W, and Cr. Therefore, according to the embodiment, a silicon film can be appropriately crystallized from various metal silicides as starting points, and the crystal can be grown.
The substrate processing method according to the embodiment may further include an adjustment step. The adjusting step adjusts the amount of metal deposited on the surface of the silicon film by supplying a cleaning liquid to the substrate after the depositing step. Therefore, according to the embodiment, the amount of metal adhering to the surface of the silicon film can be adjusted to adjust the crystal size of the silicon film to a desired size.
In addition, the substrate processing method of the embodiment may further include an edge bevel portion cleaning step. In the edge bevel portion cleaning step, the edge bevel portion of the substrate is cleaned. Therefore, according to the embodiment, when the substrate is transferred to an apparatus (for example, an annealing apparatus) that performs a heat treatment as a post-treatment, contamination of the transfer system by the metal can be suppressed.
In addition, the substrate processing method of the embodiment may further include a back surface cleaning step. In the back surface cleaning step, the back surface of the substrate is cleaned. Therefore, according to the embodiment, when the substrate is transferred to an apparatus (for example, an annealing apparatus) that performs a heat treatment as a post-treatment, contamination of the transfer system by the metal can be suppressed.
The substrate processing method according to the embodiment may further include a removal step. In the removal step, the metal remaining on the surface of the silicon film is removed after the heat treatment. Therefore, according to the embodiment, the metal to be silicide can be appropriately removed from the surface of the silicon film.
(modification example)
In the substrate processing system 1 of the above-described embodiment, the heat treatment is performed in the annealing apparatus disposed outside the substrate processing system 1, but the present invention is not limited to the disclosed technique. For example, an annealing apparatus may be disposed inside the substrate processing system 1, and heat treatment may be performed in the annealing apparatus.
In the substrate processing system 1 of the modified example, after the carrying-out process (step S112), a cup cleaning process may be performed in which the cleaning liquid is discharged from a supply portion (not shown) to the inner wall of the collection cup 70 to clean the metal and the like remaining on the inner wall of the collection cup 70.
The embodiments disclosed herein are illustrative in all respects, and should not be construed as being limiting. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the scope and spirit of the appended claims.

Claims (14)

1. A substrate processing method, characterized by:
the substrate processing method crystallizes a silicon film by heat treatment and grows the crystal, including:
a holding step of holding the substrate on which the silicon film is formed before the heat treatment; and
an adhesion step of holding the substrate by the pairSupplying a solution containing a metal to the substrate held in the step to make the metal 1.0X 1010[ atoms/cm ]2]Above and 1.0X 1020[ atoms/cm ]2]The amount of adhesion in the following range is attached to the surface of the silicon film.
2. The substrate processing method according to claim 1, wherein:
the adhering step includes diluting the solution with a diluent to adjust a concentration of the metal contained in the solution before supplying the metal-containing solution to the substrate.
3. The substrate processing method according to claim 1 or 2, wherein:
the adhering step is to adjust the concentration of the metal contained in the solution by diluting the solution in stages with a plurality of diluents.
4. A substrate processing method according to any one of claims 1 to 3, characterized in that:
the concentration of the metal contained in the solution is in the range of 10 ppm to 10000 ppm.
5. The substrate processing method according to any one of claims 1 to 4, wherein:
further comprising a hydrophilization step of hydrophilizing the surface of the silicon film,
the adhesion step supplies the metal-containing solution to the substrate in a state where the surface of the silicon film is hydrophilized in the hydrophilization step.
6. The substrate processing method according to any one of claims 1 to 5, wherein:
in the adhesion step, the metal-containing solution is poured on the substrate, and then the metal-containing solution is spun off.
7. The substrate processing method according to any one of claims 1 to 6, wherein:
the adhering step supplies a mixed solution obtained by mixing an organic solvent with the metal-containing solution to the substrate.
8. The substrate processing method according to claim 7, wherein:
the adhering step supplies a mixed solution obtained by mixing an organic solvent with the metal-containing solution to the substrate processing tool so as to have a film thickness of 100nm or more.
9. The substrate processing method according to any one of claims 1 to 8, wherein:
the metal contained in the solution includes at least one of Ni, Pd, Ag, Au, Sn, Sb, Cu, Cd, Al, Co, Pt, Mo, Ti, W, and Cr.
10. The substrate processing method according to any one of claims 1 to 9, wherein:
and an adjustment step of adjusting the amount of the metal deposited on the surface of the silicon film by supplying a cleaning liquid to the substrate after the deposition step.
11. The substrate processing method according to any one of claims 1 to 10, wherein:
and an edge bevel portion cleaning step of cleaning the edge bevel portion of the substrate after the attaching step.
12. The substrate processing method according to any one of claims 1 to 11, wherein:
further comprising a back surface cleaning step of cleaning the back surface of the substrate after the adhesion step.
13. The substrate processing method according to any one of claims 1 to 12, wherein:
further comprising a removal step of removing the metal remaining on the surface of the silicon film after the heat treatment.
14. A substrate processing apparatus characterized by:
the substrate processing apparatus is used in a substrate processing method for crystallizing a silicon film by heat treatment and growing the crystal, and includes:
a holding portion for holding a substrate;
a supply part for supplying a metal-containing solution to the substrate; and
a control unit for controlling the operation of the holding unit and the operation of the supply unit,
the control section executes:
a holding step of holding the substrate on which the silicon film is formed before the heat treatment; and
an adhesion step of supplying a solution containing a metal to the substrate held in the holding step so that the metal is 1.0 × 1010[ atoms/cm ]2]Above and 1.0X 1020[ atoms/cm ]2]The amount of adhesion in the following range is attached to the surface of the silicon film.
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