CN114093858A - LED packaging method with high light condensation and uniform light spots and LED lamp bead - Google Patents
LED packaging method with high light condensation and uniform light spots and LED lamp bead Download PDFInfo
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- CN114093858A CN114093858A CN202111421345.0A CN202111421345A CN114093858A CN 114093858 A CN114093858 A CN 114093858A CN 202111421345 A CN202111421345 A CN 202111421345A CN 114093858 A CN114093858 A CN 114093858A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 239000011324 bead Substances 0.000 title claims abstract description 16
- 238000009833 condensation Methods 0.000 title claims abstract description 9
- 230000005494 condensation Effects 0.000 title claims abstract description 9
- 239000003292 glue Substances 0.000 claims abstract description 121
- 239000000843 powder Substances 0.000 claims abstract description 26
- 235000012431 wafers Nutrition 0.000 claims description 122
- 229910052594 sapphire Inorganic materials 0.000 claims description 35
- 239000010980 sapphire Substances 0.000 claims description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a method for packaging an LED with high light condensation and uniform light spots, which comprises the following steps: s10, fixing the wafer in the middle of the reflecting bowl; s20, connecting the wafer with the positive and negative pins of the bracket through bonding wires; s30, light-blocking white glue is poured into the middle point of the reflecting bowl cup, the periphery of the wafer is wrapped after the white glue is self-leveled, and the upper surface of the white glue after self-leveling in the reflecting bowl cup is not higher than the upper surface of the wafer; s40, baking for the first time, wherein the white glue forms a reflecting surface around the wafer, and the reflecting surface can reflect the light emitted from the side surface of the wafer back into the reflecting bowl, so that the light is emitted from the right above the wafer to improve the light concentration; s50, dispensing fluorescent powder glue on the surface of the wafer and the white glue; s60 covers the lens over the reflective bowl and injects the underfill. Compared with the prior art, the invention has the following advantages: compared with other products, the lamp bead adopting the LED packaging method has higher luminous brightness, more uniform light spots and more concentrated light type.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to an LED packaging method with high light condensation and uniform light spots and an LED lamp bead.
Background
An LED is a short-term light emitting diode, and uses a solid semiconductor chip as a light emitting material, which is made of a compound containing gallium, arsenic, phosphorus, nitrogen, and the like, and can radiate visible light when electrons and holes are combined. Compared with the traditional lamp, the LED lamp has the advantages of energy conservation, environmental protection, good color rendering property, good response speed and the like. White LEDs have therefore been widely used in various industrial or domestic settings.
Because the LED has the characteristics of high brightness, rich color types, low power consumption and long service life, the LED lamp is widely applied to the field of automobiles. The LED automobile lamp is a cold light source, and compared with the original automobile lamp, the LED automobile lamp has the advantages of low power consumption, higher stability and longer service life. However, the lamp bead of the LED car lamp in the prior art generally adopts the following processing steps: fixing the wafer in a bowl, directly dispensing fluorescent powder, baking, covering the lens, filling glue, and finally baking for molding. However, the LED lamp bead packaged by the LED packaging method also has the defects of multiple light energy losses, low brightness, no light condensation in the light emitting process, uneven light spots and the like. Therefore, an LED packaging method with high light condensation and uniform light spots and an LED lamp bead are needed to solve the problems.
Disclosure of Invention
The invention aims to overcome the problems in the prior art and provides a method for packaging an LED with high light condensation and uniform light spots.
In order to achieve the purpose, the invention adopts the following scheme:
a method for packaging an LED with high light concentration and uniform light spots comprises the following steps:
s10, fixing the wafer in the middle of the reflecting bowl;
s20, connecting the wafer with the positive and negative pins of the bracket through bonding wires;
s30, light-blocking white glue is poured into the middle point of the reflecting bowl cup, the periphery of the wafer is wrapped after the white glue is self-leveled, and the upper surface of the white glue after self-leveling in the reflecting bowl cup is not higher than the upper surface of the wafer; the surface of the wafer is not covered by the light-blocking white glue, and the glue amount of the light-blocking white glue is adjusted according to the change of the size of the wafer.
S40, baking for the first time, wherein the white glue forms a reflecting surface around the wafer, and the reflecting surface can reflect the light emitted from the side surface of the wafer back into the reflecting bowl, so that the light is emitted from the right above the wafer to improve the light concentration;
s50, dispensing fluorescent powder glue on the surface of the wafer and the white glue;
s60 covers the lens over the reflective bowl and injects the underfill.
Further, the wafer is a sapphire wafer, the fluorescent powder glue is yellow fluorescent powder glue, and light emitted by the sapphire wafer is excited and compounded by the yellow fluorescent powder glue to generate white light.
Further, the step S50 includes baking the white glue surface after dispensing the phosphor glue and forming the white glue surface by a second baking.
Further, the step S60 includes injecting the filling glue and then molding the filling glue by a third baking.
Furthermore, the height of the white glue in the reflecting bowl cup is not higher than the peripheral edge of the reflecting bowl cup.
Further, the upper surface of the white glue is coplanar with the upper surface of the wafer after the white glue self-levels in the reflecting bowl cup.
The utility model provides a high spotlight and even LED lamp pearl of facula, includes:
the bracket is provided with a fixed groove, a reflecting bowl cup for mounting the wafer and a pin connected with the wafer;
the chip is fixedly arranged in the middle of the reflecting bowl cup;
the white glue is filled in the reflection bowl cup to wrap the periphery of the wafer, the upper surface of the white glue in the reflection bowl cup is not higher than that of the wafer, the white glue can form a reflection surface on the periphery of the wafer to reflect light rays emitted from the side surface of the wafer back into the reflection bowl cup, and the light rays are emitted from the right upper side of the wafer, so that the light concentration degree is improved;
the fluorescent powder glue is arranged above the wafer and the white glue;
and the lens is covered above the fluorescent powder glue and is fixedly connected with the bracket through the fixing groove.
Furthermore, the wafer is a sapphire wafer, the fluorescent powder glue is yellow fluorescent powder glue, the fluorescent powder glue is a double-component organic silicon elastomer material cured by heating, and the cured fluorescent powder glue has the characteristics of high light transmittance, high refractive index, good thermal stability, small stress, low hygroscopicity and the like. The light emitted by the sapphire wafer 2 is excited and compounded by yellow fluorescent powder glue to generate white light.
Furthermore, the wafer is fixedly arranged in the middle of the reflecting bowl cup through the die bonding glue.
Furthermore, the height of the white glue in the reflecting bowl cup is not higher than the peripheral edge of the reflecting bowl cup.
The utility model provides a LED lamp pearl that bimorph height spotlight and facula are even, includes:
the bracket is provided with a fixed groove, a reflecting bowl cup for mounting the wafer and a pin connected with the wafer;
the middle position of the reflecting bowl cup is provided with two sapphire wafers, and the sapphire wafers are fixedly connected with the bottom of the reflecting bowl cup through crystal fixing glue;
the white glue is filled in the reflecting bowl cup to wrap the periphery of the sapphire wafer, the upper surface of the white glue in the reflecting bowl cup is not higher than the upper surface of the sapphire wafer and the peripheral edge of the reflecting bowl cup, the white glue can form reflecting surfaces around the sapphire wafer to reflect light rays emitted from the side surface of the sapphire wafer back into the reflecting bowl cup, and the light rays are emitted from the right upper side of the sapphire wafer, so that the light concentration degree is improved;
the fluorescent powder glue is arranged above the sapphire wafer and the white glue;
and the lens is covered above the fluorescent powder glue and is fixedly connected with the bracket through the fixing groove.
Compared with the prior art, the invention has the following advantages: according to the LED packaging method, the light-blocking white glue is arranged in the middle of the reflecting bowl cup with the fixed wafer, the light-blocking white glue is enabled to evenly and flatly wrap the periphery of the wafer, the side face of the wafer and the light-blocking white glue form a light-blocking face and a reflecting face, and light rays are enabled to return to the reflecting bowl cup again through reflection or diffuse reflection, and then the light rays are emitted from the position right above the wafer. Therefore, compared with other products, the lamp bead adopting the LED packaging method has higher luminous brightness, more uniform light spots and more concentrated light type.
Drawings
The present application will be described in further detail with reference to the following drawings and detailed description.
Fig. 1 is a schematic flow chart of a method for packaging an LED with high light concentration and uniform light spot according to the present invention.
Fig. 2 is a schematic structural diagram of an LED lamp bead with high light condensation and uniform light spots according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a bi-chip high-concentration and uniform-spot LED lamp bead according to a second embodiment of the present invention.
Detailed Description
The following detailed description of the preferred embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Example one
As shown in fig. 1, a method for packaging an LED with high light concentration and uniform light spot includes the following steps:
s10, fixing the wafer 2 in the middle of the reflecting bowl 3;
s20, connecting the wafer 2 with the positive and negative electrode pins 102 of the bracket 1 through bonding wires;
s30, light-blocking white glue 4 is poured into the middle of the reflecting bowl 3, the periphery of the wafer 2 is wrapped after the white glue 4 is self-leveled in the reflecting bowl 3, and the upper surface of the white glue 4 is not higher than the upper surface of the wafer 2 after the white glue 4 is self-leveled in the reflecting bowl 3; the surface of the wafer 2 is not covered with the light-blocking white paste 4, and the amount of the light-blocking white paste 4 is adjusted according to the change of the size of the wafer 2.
S40, baking for the first time, wherein the white glue 4 is cured around the wafer 2 to form a reflecting surface, and the reflecting surface can enable the light emitted from the side surface of the wafer 2 to return to the reflecting bowl 3 again through reflection, so that the light is emitted from the right top of the wafer 2 to improve the light concentration;
s50, dispensing fluorescent powder glue on the surface of the wafer 2 and the white glue 4;
s60 covers the lens over the reflecting bowl 3 and injects the filling glue.
Preferably, the wafer 2 is a sapphire wafer 2, the phosphor glue is yellow phosphor glue, and light emitted by the sapphire wafer 2 is excited and compounded by the yellow phosphor glue to generate white light.
Preferably, the step S50 further includes baking the white glue 4 for a second time after the phosphor glue is applied on the surface.
Preferably, the step S60 further includes injecting an underfill and then molding the underfill by a third baking.
Preferably, the white glue 4 is not higher than the peripheral edge of the reflecting bowl 3 in the reflecting bowl 3.
Preferably, the white glue 4 self-levels in the reflective bowl 3 such that the top surface is coplanar with the top surface of the wafer 2.
As shown in fig. 2, a high light-gathering and light spot uniform LED lamp bead includes:
a support 1, wherein the support 1 is provided with a fixing groove 101, a reflecting bowl 3 for mounting a wafer 2 and a pin 102 connected with the wafer 2;
the wafer 2 is fixedly arranged in the middle of the reflecting bowl cup 3;
the white glue 4 is filled in the reflection bowl cup 3 to wrap the periphery of the wafer 2, the upper surface of the white glue 4 in the reflection bowl cup 3 is not higher than that of the wafer 2, the white glue 4 can form a reflection surface around the wafer 2 to reflect light emitted from the side surface of the wafer 2 back to the reflection bowl cup 3 so that the light is emitted from the right upper side of the wafer 2, and therefore the light concentration degree is improved;
the fluorescent powder glue is arranged above the wafer 2 and the white glue 4;
and the lens is covered above the fluorescent powder glue and is fixedly connected with the bracket 1 through the fixing groove 101.
Preferably, the wafer 2 is a sapphire wafer 2, the phosphor glue is a yellow phosphor glue, the phosphor glue is a two-component silicone elastomer material cured by heating, and the cured wafer has the characteristics of high light transmittance, high refractive index, good thermal stability, small stress, low hygroscopicity and the like. The light emitted by the sapphire wafer 2 is excited and compounded by yellow fluorescent powder glue to generate white light.
Preferably, the wafer 2 is fixed at the middle position of the reflecting bowl cup 3 through a die bonding adhesive.
Preferably, the white glue 4 is not higher than the peripheral edge of the reflecting bowl 3 in the reflecting bowl 3.
Compared with the prior art, the invention has the following advantages: according to the LED packaging method, the light blocking white glue 4 is arranged in the middle of the reflecting bowl cup 3 with the wafer 2 fixed, the light blocking white glue 4 evenly and flatly wraps the periphery of the wafer 2, the side face of the wafer 2 and the light blocking white glue 4 form a light blocking face and a reflecting face, and light rays are returned to the reflecting bowl cup 3 again through reflection or diffuse reflection, so that the light rays are emitted from the position right above the wafer 2. Therefore, compared with other products, the lamp bead adopting the LED packaging method has higher luminous brightness, more uniform light spots and more concentrated light type.
Example two
As shown in fig. 3, a bimorph high-concentration and light spot uniform LED lamp bead comprises:
the wafer mounting device comprises a bracket 1, wherein the bracket 1 is provided with a fixing groove, a reflecting bowl 3 for mounting a wafer 2 and pins 102 connected with the wafer 2;
the middle position of the reflection bowl cup 3 is provided with two sapphire wafers 2, and the sapphire wafers 2 are fixedly connected with the bottom of the reflection bowl cup 3 through crystal fixing glue;
the white glue 4 is filled in the reflection bowl cup 3 to wrap the periphery of the sapphire wafer 2, the upper surface of the white glue 4 in the reflection bowl cup 3 is not higher than the upper surface of the sapphire wafer 2 and the peripheral edge of the reflection bowl cup 3, the white glue 4 can form a reflecting surface around the sapphire wafer 2 to reflect light emitted from the side surface of the sapphire wafer 2 back to the reflection bowl cup 3, and the light is emitted from the right upper side of the sapphire wafer 2, so that the light concentration degree is improved;
the fluorescent powder glue is arranged above the sapphire wafer 2 and the white glue 4;
and the lens is covered above the fluorescent powder glue and is fixedly connected with the bracket 1 through a fixing groove.
According to the LED packaging method, the light blocking white glue 4 is arranged in the middle of the reflecting bowl cup 3 with the wafer 2 fixed, the light blocking white glue 4 evenly and flatly wraps the periphery of the wafer 2, the side face of the wafer 2 and the light blocking white glue 4 form a light blocking face and a reflecting face, and light rays are returned to the reflecting bowl cup 3 again through reflection or diffuse reflection, so that the light rays are emitted from the position right above the wafer 2. Therefore, compared with other products, the lamp bead adopting the LED packaging method has higher luminous brightness, more uniform light spots and more concentrated light type.
The foregoing is only a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and substitutions can be made without departing from the technical principle of the present application, and these modifications and substitutions should also be regarded as the protection scope of the present application.
Claims (10)
1. A method for packaging an LED with high light concentration and uniform light spots is characterized by comprising the following steps:
s10, fixing the wafer in the middle of the reflecting bowl;
s20, connecting the wafer with positive and negative pins of the bracket through bonding wires;
s30, light-blocking white glue is poured into the middle of the reflecting bowl cup, the periphery of the wafer is wrapped after the white glue is self-leveled, and the upper surface of the white glue after the white glue is self-leveled in the reflecting bowl cup is not higher than the upper surface of the wafer;
s40, baking and forming for the first time, wherein the white glue forms a reflecting surface around the wafer, and the reflecting surface can enable the light rays emitted from the side surface of the wafer to return to the reflecting bowl through reflection, so that the light rays are emitted from the right top of the wafer to improve the light concentration;
s50, dispensing fluorescent powder glue on the wafer and the white glue surface;
s60 covering a lens above the reflecting bowl and injecting a filling glue.
2. The method for packaging the LED with high light concentration and uniform light spots according to claim 1, wherein the wafer is a sapphire wafer, the phosphor glue is yellow phosphor glue, and light emitted by the sapphire wafer is excited and compounded by the yellow phosphor glue to generate white light.
3. The method of claim 1, wherein the step S50 further comprises baking the white glue surface for a second time after dispensing the phosphor glue.
4. The method as claimed in claim 1, wherein the step S60 further includes injecting the underfill, and then forming the underfill by a third baking.
5. The method as claimed in claim 1, wherein the height of the white glue in the reflecting bowl is not higher than the peripheral edge of the reflecting bowl.
6. The method of claim 1, wherein the top surface of the white glue is coplanar with the top surface of the wafer after the white glue self-levels in the reflective bowl.
7. The utility model provides a high spotlight and even LED lamp pearl of facula which characterized in that includes:
the wafer mounting device comprises a support, a wafer fixing groove, a reflecting bowl cup and pins, wherein the support is provided with the fixing groove, the reflecting bowl cup and the pins;
the wafer is fixedly arranged in the middle of the reflecting bowl cup;
the white glue is filled in the reflecting bowl cup to wrap the periphery of the wafer, the upper surface of the white glue in the reflecting bowl cup is not higher than the upper surface of the wafer, and the white glue can form reflecting surfaces around the wafer to reflect light rays emitted from the side surfaces of the wafer back into the reflecting bowl cup so that the light rays are emitted from the right upper part of the wafer, so that the light concentration degree is improved;
the fluorescent powder glue is arranged above the wafer and the white glue;
and the lens covers the fluorescent powder glue and is fixedly connected with the bracket through the fixing groove.
8. The LED lamp bead with high light condensation and uniform light spots according to claim 7, wherein the wafer is a sapphire wafer, the phosphor glue is yellow phosphor glue, and light emitted by the sapphire wafer is excited and compounded by the yellow phosphor glue to generate white light.
9. The LED lamp bead with high light concentration and uniform light spots according to claim 7 or 8, wherein the wafer is fixedly arranged in the middle of the reflecting bowl cup through a die bond adhesive.
10. The utility model provides a LED lamp pearl that bimorph height spotlight and facula are even, its characterized in that includes:
the wafer mounting device comprises a support, a wafer fixing groove, a reflecting bowl cup and pins, wherein the support is provided with the fixing groove, the reflecting bowl cup and the pins;
the reflection bowl cup is characterized in that two sapphire wafers are arranged in the middle of the reflection bowl cup and fixedly connected with the bottom of the reflection bowl cup through crystal fixing glue;
the white glue is filled in the reflection bowl cup and wraps the periphery of the sapphire wafer, the upper surface of the white glue in the reflection bowl cup is not higher than the upper surface of the sapphire wafer and the peripheral edge of the reflection bowl cup, and the white glue can form a reflecting surface around the sapphire wafer and reflect light rays emitted from the side surface of the sapphire wafer back into the reflection bowl cup so that the light rays are emitted from the right top of the sapphire wafer, so that the light gathering degree is improved;
the fluorescent powder glue is arranged above the sapphire wafer and the white glue;
and the lens covers the fluorescent powder glue and is fixedly connected with the bracket through the fixing groove.
Priority Applications (1)
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CN202111421345.0A CN114093858A (en) | 2021-11-26 | 2021-11-26 | LED packaging method with high light condensation and uniform light spots and LED lamp bead |
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CN202111421345.0A CN114093858A (en) | 2021-11-26 | 2021-11-26 | LED packaging method with high light condensation and uniform light spots and LED lamp bead |
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CN202111421345.0A Pending CN114093858A (en) | 2021-11-26 | 2021-11-26 | LED packaging method with high light condensation and uniform light spots and LED lamp bead |
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- 2021-11-26 CN CN202111421345.0A patent/CN114093858A/en active Pending
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