CN114068693A - Reliable type paster triode - Google Patents

Reliable type paster triode Download PDF

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Publication number
CN114068693A
CN114068693A CN202111346376.4A CN202111346376A CN114068693A CN 114068693 A CN114068693 A CN 114068693A CN 202111346376 A CN202111346376 A CN 202111346376A CN 114068693 A CN114068693 A CN 114068693A
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CN
China
Prior art keywords
protective cover
sets
semiconductor substrate
reliable
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111346376.4A
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Chinese (zh)
Inventor
林明武
马盼
张凯川
陈梓奇
张凯东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Unita Electronic Technology Co ltd
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Shenzhen Unita Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shenzhen Unita Electronic Technology Co ltd filed Critical Shenzhen Unita Electronic Technology Co ltd
Priority to CN202111346376.4A priority Critical patent/CN114068693A/en
Publication of CN114068693A publication Critical patent/CN114068693A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)

Abstract

The invention relates to the technical field of triodes, in particular to a reliable patch triode, which can effectively enhance the protection of the patch triode, avoid influencing the running reliability of the patch triode and reduce the use limitation; including semiconductor substrate, the under shield, go up the protection casing, top board and holding down plate, semiconductor substrate's rear end is connected and is provided with the connection piece, semiconductor substrate's front end is connected and is provided with three rectangle pins of group, be provided with connection piece groove and three pin grooves of group on the under shield, semiconductor substrate passes through rectangle pin and places on the under shield with the cooperation detachable in pin groove, top board and holding down plate pass through spring fixed mounting respectively at the inboard top of last protection casing and the inboard bottom of under shield, the connection of the front end bilateral symmetry of under shield is provided with two sets of sockets, the connection of the front end bilateral symmetry of going up the protection casing is provided with two sets of bolts, and two sets of bolts are separable grafting respectively on two sets of sockets.

Description

Reliable type paster triode
Technical Field
The invention relates to the technical field of triodes, in particular to a reliable patch triode.
Background
The patch triode is basically used for amplifying signals, can amplify weak electric signals to a certain degree, is the same as a common plug-in triode, but has different packaging structures, mainly comprises a semiconductor substrate, rectangular pins and connecting sheets, is smaller, saves more space when in use and avoids manual plug-in.
But because the paster triode volume is littleer, owing to lack protection architecture when using for the protectiveness of paster triode is relatively poor, influences the operational reliability of paster triode, leads to the use limitation higher.
Disclosure of Invention
In order to solve the technical problems, the invention provides the reliable type patch triode which can effectively enhance the protection performance of the patch triode, avoid influencing the operation reliability of the patch triode and reduce the use limitation.
The invention relates to a reliable type patch triode, which comprises a semiconductor substrate, a lower protective cover, an upper pressure plate and a lower pressure plate, wherein the rear end of the semiconductor substrate is connected with a connecting sheet, the front end of the semiconductor substrate is connected with three groups of rectangular pins, the lower protective cover is provided with a connecting sheet groove and three groups of pin grooves, the semiconductor substrate is detachably placed on the lower protective cover through the matching of the rectangular pins and the pin grooves, the upper protective cover is provided with two groups of connecting shafts, the lower protective cover is provided with two groups of rotating grooves, the upper protective cover is rotatably covered at the top end of the lower protective cover through the matching of the connecting shafts and the rotating grooves, the upper pressure plate and the lower pressure plate are respectively connected with a plurality of groups of springs, the upper pressure plate and the lower pressure plate are respectively and fixedly installed at the top end of the inner side of the upper protective cover and the bottom end of the inner side of the lower protective cover through the springs, and the front end of the lower protective cover is bilaterally and symmetrically connected with two groups of sockets, two groups of bolts are symmetrically arranged at the left and right sides of the front end of the upper protective cover, and the two groups of bolts are respectively and detachably inserted into the two groups of sockets.
According to the reliable patch triode disclosed by the invention, the connecting sheet grooves and the three groups of pin grooves on the lower protective cover are respectively provided with the connecting sheet protective covers and the pin protective covers.
According to the reliable patch triode disclosed by the invention, the top end of the upper protective cover is provided with the observation window.
According to the reliable patch triode disclosed by the invention, the lower protective cover and the upper protective cover as well as the upper pressing plate and the lower pressing plate are respectively provided with a plurality of groups of heat dissipation ports.
According to the reliable patch triode disclosed by the invention, the bottom end of the upper pressure plate and the top end of the lower pressure plate are both connected with the protective pads.
The reliable patch triode further comprises two groups of handles which are bilaterally and symmetrically fixedly arranged on the upper protective cover.
According to the reliable patch triode disclosed by the invention, the inner walls of the circumferences of the two groups of sockets are respectively provided with the fastening sleeves.
According to the reliable patch triode disclosed by the invention, the fastening sleeves are arranged on the circumferential outer walls of the two groups of handles.
Compared with the prior art, the invention has the beneficial effects that: firstly, when using, the staff can place the semiconductor substrate in the lower protective cover earlier, and make the corresponding placing in link groove and three group pin grooves of connection piece and rectangle pin, then rotate the upper protective cover, cover the upper protective cover on the lower protective cover, and make the bolt insert in the socket, after covering the dress and accomplishing, top board and holding down plate are pasted tightly respectively with the top and the bottom of semiconductor substrate this moment, the spring is in compression state, thereby exert a pretightning force fixed to the semiconductor substrate, make semiconductor substrate firmly fix in lower protective cover and upper protective cover, played the protection to the semiconductor substrate, thereby can effectively strengthen the protectiveness of paster triode, avoid influencing the reliability of paster triode operation, reduce and use the limitation.
Drawings
FIG. 1 is a schematic view of the upper side of the present invention;
FIG. 2 is a schematic view of the upper side cross-sectional structure of the present invention;
FIG. 3 is a schematic front side view of the present invention;
FIG. 4 is a rear side view of the present invention;
FIG. 5 is a schematic front side cross-sectional view of the present invention;
FIG. 6 is a schematic view of the upper side of the upper platen in the present invention;
FIG. 7 is a front side schematic view of the upper shield of the present invention;
in the drawings, the reference numbers: 1. a semiconductor substrate; 2. connecting sheets; 3. a rectangular pin; 4. a lower protective cover; 5. a connecting piece groove; 6. a lead groove; 7. an upper protective cover; 8. a connecting shaft; 9. an upper pressure plate; 10. a lower pressing plate; 11. a spring; 12. a socket; 13. a bolt; 14. a connecting sheet protecting jacket; 15. a pin protecting sleeve; 16. an observation window; 17. a heat dissipation port; 18. a protective pad; 19. a handle; 20. fastening sleeves; 21. and (4) anti-skid lines.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 1 to 7, the reliable type patch triode of the present invention comprises a semiconductor substrate 1, a lower protective cover 4, an upper protective cover 7, an upper pressure plate 9 and a lower pressure plate 10, wherein the rear end of the semiconductor substrate 1 is connected with a connecting sheet 2, the front end of the semiconductor substrate 1 is connected with three groups of rectangular pins 3, the lower protective cover 4 is provided with a connecting sheet slot 5 and three groups of pin slots 6, the semiconductor substrate 1 is detachably placed on the lower protective cover 4 through the matching of the rectangular pins 3 and the pin slots 6, the upper protective cover 7 is provided with two groups of connecting shafts 8, the lower protective cover 4 is provided with two groups of rotating slots, the upper protective cover 7 is rotatably covered on the top end of the lower protective cover 4 through the matching of the connecting shafts 8 and the rotating slots, the upper pressure plate 9 and the lower pressure plate 10 are both connected with a plurality of sets of springs 11, the upper pressure plate 9 and the lower pressure plate 10 are respectively fixedly installed on the top end of the inner side of the upper protective cover 7 and the bottom end of the inner side of the lower protective cover 4 through the springs 11, the front end of the lower protective cover 4 is provided with two groups of sockets 12 in a bilateral symmetry connection mode, the front end of the upper protective cover 7 is provided with two groups of bolts 13 in a bilateral symmetry connection mode, and the two groups of bolts 13 are respectively inserted into the two groups of sockets 12 in a separable mode; firstly, when the device is used, a worker can firstly place the semiconductor substrate 1 in the lower protective cover 4, correspondingly place the connecting sheet 2 and the rectangular pins 3 in the connecting sheet groove 5 and the three groups of pin grooves 6, then rotate the upper protective cover 7, cover the upper protective cover 7 on the lower protective cover 4, and insert the pins 13 into the socket 12, after the cover is completed, the upper pressing plate 9 and the lower pressing plate 10 are respectively attached to the top end and the bottom end of the semiconductor substrate 1, and the spring 11 is in a compressed state, so that a pretightening force for fixing the semiconductor substrate 1 is applied, the semiconductor substrate 1 is firmly fixed in the lower protective cover 4 and the upper protective cover 7, the protection for the semiconductor substrate 1 is achieved, the protection performance of the patch triode can be effectively enhanced, the reliability of the operation of the patch triode is prevented from being influenced, and the use limitation is reduced.
According to the reliable patch triode disclosed by the invention, a connecting sheet protecting sleeve 14 and a pin protecting sleeve 15 are respectively arranged in the connecting sheet groove 5 and the three groups of pin grooves 6 on the lower protective cover 4; through setting up connection piece lag 14 and pin lag 15, can play the good protection to connection piece 2 and rectangle pin 3, prevent to cause the damage to connection piece 2 and rectangle pin 3 when the lid dress.
According to the reliable patch triode disclosed by the invention, the top end of the upper protective cover 7 is provided with the observation window 16; through setting up observation window 16, can be convenient for observe semiconductor substrate 1's in service behavior, be convenient for in time overhaul, reduce the use limitation.
According to the reliable type patch triode disclosed by the invention, a plurality of groups of heat dissipation ports 17 are respectively arranged on the lower protective cover 4 and the upper protective cover 7, and the upper pressure plate 9 and the lower pressure plate 10; by arranging the heat dissipation port 17, the generated heat can be dissipated when the semiconductor substrate 1 is in operation, so that the normal operation of the semiconductor substrate 1 is ensured, and the use reliability is improved.
According to the reliable type patch triode disclosed by the invention, the bottom end of the upper pressure plate 9 and the top end of the lower pressure plate 10 are both connected with a protection pad 18; by arranging the protective pad 18, damage to the surface of the semiconductor substrate 1 can be effectively prevented when the cover is tightly pressed, and the use reliability is improved.
The reliable patch triode further comprises two groups of handles 19, wherein the two groups of handles 19 are fixedly arranged on the upper protective cover 7 in a bilateral symmetry manner; through setting up handle 19, can make the switching of last protection casing 7 more convenient, reduce and use the limitation.
According to the reliable patch triode disclosed by the invention, the inner walls of the circumferences of the two groups of sockets 12 are respectively provided with the fastening sleeves 20; by arranging the fastening sleeve 20, the plug 13 can be more tightly inserted into the socket 12, and the use reliability is improved.
According to the reliable patch triode, the fastening sleeves 20 are arranged on the circumferential outer walls of the two groups of handles 19; through setting up adapter sleeve 20, can effectively prevent the condition that skids when opening the hand, improve and use the reliability.
When the reliable type patch triode disclosed by the invention works, firstly, when the reliable type patch triode is used, a worker can firstly place a semiconductor substrate 1 in a lower protective cover 4, correspondingly place a connecting sheet 2 and rectangular pins 3 in a connecting sheet groove 5 and three groups of pin grooves 6, then rotate an upper protective cover 7, cover the upper protective cover 7 on the lower protective cover 4, insert pins 13 into a socket 12, after the cover is completed, an upper pressing plate 9 and a lower pressing plate 10 are respectively attached to the top end and the bottom end of the semiconductor substrate 1, and a spring 11 is in a compressed state, so that a pretightening force for fixing the semiconductor substrate 1 is exerted, the semiconductor substrate 1 is firmly fixed in the lower protective cover 4 and the upper protective cover 7, and the semiconductor substrate 1 is protected.
According to the reliable patch triode, the installation mode, the connection mode or the arrangement mode are common mechanical modes, and the reliable patch triode can be implemented as long as the beneficial effects of the reliable patch triode can be achieved; those skilled in the art can install and operate the device according to the attached instructions.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims (8)

1. A reliable patch triode is characterized by comprising a semiconductor substrate (1), a lower protective cover (4), an upper protective cover (7), an upper pressing plate (9) and a lower pressing plate (10), wherein the rear end of the semiconductor substrate (1) is connected with a connecting sheet (2), the front end of the semiconductor substrate (1) is connected with three groups of rectangular pins (3), the lower protective cover (4) is provided with a connecting sheet groove (5) and three groups of pin grooves (6), the semiconductor substrate (1) is detachably placed on the lower protective cover (4) through the matching of the rectangular pins (3) and the pin grooves (6), the upper protective cover (7) is provided with two groups of connecting shafts (8), the lower protective cover (4) is provided with two groups of rotating grooves, the upper protective cover (7) is rotatably covered at the top end of the lower protective cover (4) through the matching of the connecting shafts (8) and the rotating grooves, all connect on top board (9) and holding down plate (10) and be provided with multiunit spring (11), top board (9) and holding down plate (10) are through spring (11) fixed mounting respectively at the top of last protection casing (7) inboard and the bottom of protection casing (4) inboard down, the connection of the front end bilateral symmetry of protection casing (4) down is provided with two sets of sockets (12), the connection of the front end bilateral symmetry of going up protection casing (7) is provided with two sets of bolt (13), and two sets of bolt (13) separable grafting is on two sets of sockets (12) respectively.
2. A reliable type patch transistor according to claim 1, wherein the connection pad groove (5) and the three sets of pin grooves (6) of the lower shield (4) are respectively provided with a connection pad shield (14) and a pin shield (15).
3. A reliable type patch transistor according to claim 2, wherein the top end of the upper shield (7) is provided with a viewing window (16).
4. A reliable type patch transistor according to claim 3, wherein the lower shield (4) and the upper shield (7) and the upper platen (9) and the lower platen (10) are provided with a plurality of sets of heat dissipation ports (17).
5. The reliable type patch triode according to claim 4, wherein a protection pad (18) is connected to both the bottom end of the upper pressing plate (9) and the top end of the lower pressing plate (10).
6. A reliable patch transistor according to claim 5, further comprising two sets of handles (19), wherein the two sets of handles (19) are fixedly mounted on the upper shield (7) in bilateral symmetry.
7. A reliable patch transistor according to claim 6, wherein the two sets of sockets (12) are provided with fastening sleeves (20) on their circumferential inner walls.
8. A reliable patch transistor according to claim 7, wherein the two sets of handles (19) are provided with fastening sleeves (20) on the circumferential outer walls.
CN202111346376.4A 2021-11-15 2021-11-15 Reliable type paster triode Pending CN114068693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111346376.4A CN114068693A (en) 2021-11-15 2021-11-15 Reliable type paster triode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111346376.4A CN114068693A (en) 2021-11-15 2021-11-15 Reliable type paster triode

Publications (1)

Publication Number Publication Date
CN114068693A true CN114068693A (en) 2022-02-18

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Application Number Title Priority Date Filing Date
CN202111346376.4A Pending CN114068693A (en) 2021-11-15 2021-11-15 Reliable type paster triode

Country Status (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116884927A (en) * 2023-07-19 2023-10-13 先之科半导体科技(东莞)有限公司 Anti-interference field effect transistor with plastic package structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140036466A1 (en) * 2010-12-16 2014-02-06 Epcos Ag Cased electrical component
CN211376621U (en) * 2020-02-11 2020-08-28 上海根派半导体科技有限公司 Lowk chip packaging mechanism
CN212365957U (en) * 2020-05-06 2021-01-15 广东可易亚半导体科技有限公司 SMD high-efficient triode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140036466A1 (en) * 2010-12-16 2014-02-06 Epcos Ag Cased electrical component
CN211376621U (en) * 2020-02-11 2020-08-28 上海根派半导体科技有限公司 Lowk chip packaging mechanism
CN212365957U (en) * 2020-05-06 2021-01-15 广东可易亚半导体科技有限公司 SMD high-efficient triode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116884927A (en) * 2023-07-19 2023-10-13 先之科半导体科技(东莞)有限公司 Anti-interference field effect transistor with plastic package structure

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