CN116884927A - Anti-interference field effect transistor with plastic package structure - Google Patents
Anti-interference field effect transistor with plastic package structure Download PDFInfo
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- CN116884927A CN116884927A CN202310887619.8A CN202310887619A CN116884927A CN 116884927 A CN116884927 A CN 116884927A CN 202310887619 A CN202310887619 A CN 202310887619A CN 116884927 A CN116884927 A CN 116884927A
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- 239000004033 plastic Substances 0.000 title claims abstract description 110
- 230000005669 field effect Effects 0.000 title claims abstract description 70
- 230000017525 heat dissipation Effects 0.000 claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 claims description 17
- 239000004519 grease Substances 0.000 claims description 16
- 229920001296 polysiloxane Polymers 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 16
- 239000011248 coating agent Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The application discloses an anti-interference field effect transistor with a plastic package structure, which comprises a field effect transistor main body, pins, mounting plates, a lower plastic package and a second shielding net, wherein the pins are all mounted at the bottom end of the field effect transistor main body, the mounting plates are fixed at the top end of the field effect transistor main body, the lower plastic package is arranged below the field effect transistor main body, a first shielding net is fixed on the inner wall of the lower plastic package, the second shielding net is arranged above the field effect transistor main body, a second groove is fixed on the inner wall of the second shielding net, positioning clamping grooves are formed on the outer walls of the lower plastic package, which are close to one side of the second shielding net, positioning protruding blocks are arranged on the outer walls of the second shielding net, and heat dissipation structures are arranged on one sides of the inner parts of the lower plastic package and the second shielding net. The application has good anti-interference performance, plastic package protection function, electrical performance guarantee and good heat dissipation effect.
Description
Technical Field
The application relates to the technical field of field effect transistors, in particular to an anti-interference field effect transistor with a plastic package structure.
Background
A field effect transistor is a unipolar semiconductor device that controls current using an electric field effect. The bipolar transistor has the advantages of high input resistance, small noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, wide safe working area and the like, is applied to large-scale and very large-scale integrated circuits, becomes a powerful competitor of bipolar transistors and power transistors, and the field effect transistor controls the output loop current by utilizing the electric field effect of the control input loop, and is also called a unipolar transistor.
The Chinese patent of the public number CN213816130U discloses a field effect transistor, which comprises a packaging shell, a plurality of pins, a mounting fixing seat and a chip, wherein the chip is arranged in the packaging shell, the pins are inserted into the packaging shell and connected with the chip, the mounting fixing seat is arranged on one side surface of the packaging shell far away from the pins, and the mounting fixing seat is provided with a threaded hole; the upper surface of the packaging shell is rotationally connected with a pin protection structure through a rotating shaft, the pin protection structure comprises an L-shaped heat dissipation plate body and a plurality of heat dissipation fins arranged in an array mode, the L-shaped heat dissipation plate body leans against one surface of the packaging shell, and the lower surface of each heat dissipation fin is in contact with the upper surface of the packaging shell.
The field effect transistor has the advantages that the pin protection structure is arranged, so that the damage of pins in the transportation process is avoided, products are scrapped, the good heat dissipation function is realized, and the energy consumption is reduced, however, the field effect transistor is easy to be interfered by external electromagnetic waves in the working process, the normal work can be influenced, the field effect transistor cannot be comprehensively protected by adopting the packaging structure, the field effect transistor is easy to be influenced by corrosive gas and moisture in the air, certain corrosion is generated on chips and circuits in the field effect transistor, the electrical performance is reduced, the service life is shortened, and therefore, improvement is needed.
Disclosure of Invention
The present application is directed to a field effect transistor with a plastic package structure and anti-interference function, so as to solve the above-mentioned problems in the prior art.
In order to achieve the above purpose, the present application provides the following technical solutions: the field effect transistor comprises a field effect transistor body, pins, mounting plates, a lower plastic package shell and a second shielding net, wherein the pins are mounted at the bottom end of the field effect transistor body, the mounting plates are fixed at the top end of the field effect transistor body, mounting holes are formed in the mounting plates, the lower plastic package shell is arranged below the field effect transistor body, a first shielding net is fixed on the inner wall of the lower plastic package shell, the second shielding net is arranged above the field effect transistor body, a second groove is fixed on the inner wall of the second shielding net, positioning clamping grooves are formed in the outer wall, close to one side of the second shielding net, of the lower plastic package shell, positioning protruding blocks are arranged on the outer wall of the second shielding net at the positions of the positioning clamping grooves and are tightly clamped with the positioning clamping grooves, and heat dissipation structures are arranged on one sides of the inner sides of the lower plastic package shell and the second shielding net.
Preferably, the bottom of the lower plastic package is fixed with equidistant first jackets, and the bottom of the upper plastic package at the position of the first jackets is fixed with second jackets, and the second jackets are matched with the first jackets, so that pins are led out conveniently.
Preferably, the top of lower plastic envelope is provided with first recess, just the last plastic envelope top of first recess position department is provided with the second recess, and the second recess is mutually supported with first recess, is convenient for draw forth the mounting plate.
Preferably, the outer surfaces of the lower plastic package shell and the upper plastic package shell are coated with graphene coatings, so that the electromagnetic shielding function is achieved, and the anti-interference performance is further improved.
Preferably, the first shielding net and the second shielding net are made of red copper, and the electromagnetic shielding effect is good.
Preferably, rubber linings are adhered to the inner walls of the first groove, the second groove, the first sheath and the second sheath, so that the tightness of the first groove, the second groove, the first sheath and the second sheath is improved.
Preferably, the heat dissipation structure comprises a heat conduction sheet, heat conduction silicone grease and heat dissipation fins, wherein the heat conduction sheet is arranged on one side of the inner parts of the lower plastic package shell and the upper plastic package shell, the heat conduction silicone grease is coated on the surface of the heat conduction sheet, and the heat conduction silicone grease is tightly attached to the field effect transistor main body, so that the heat dissipation structure has the effect of being beneficial to heat dissipation.
Preferably, the heat conducting fin is made of copper, and has good heat conducting effect.
Preferably, the heat dissipation fins are fixed on the outer wall of one side of the heat conduction fin away from the heat conduction silicone grease, and one end of the heat dissipation fins away from the heat conduction fin is respectively adhered to the inner walls of the lower plastic package shell and the upper plastic package shell, so that heat dissipation is facilitated.
Compared with the prior art, the application has the beneficial effects that: the field effect transistor with the anti-interference and plastic package structure has the advantages of good anti-interference performance, plastic package protection function, electrical performance guarantee and good heat dissipation effect;
(1) The first shielding net, the second shielding net and the graphene coating are arranged, and the first shielding net and the second shielding net are respectively fixed on the inner surfaces of the lower plastic package shell and the upper plastic package shell, so that the first shielding net and the second shielding net are made of red copper and have electromagnetic shielding effects, and therefore the anti-interference effect is achieved;
(2) The lower plastic package shell and the upper plastic package shell are respectively sleeved below and above the field effect transistor main body, pins at the bottom end of the field effect transistor main body penetrate out of the first sheath and the second sheath, mounting pieces at the top end of the field effect transistor main body penetrate out of the first groove and the second groove, the sealing performance of the first groove, the second groove, the first sheath and the second sheath is improved due to the arrangement of the rubber lining, the lower plastic package shell and the upper plastic package shell are combined, the positioning protruding block is clamped into the positioning clamping groove, the lower plastic package shell and the upper plastic package shell form a sealed whole, the field effect transistor main body can be subjected to plastic package, the lower plastic package shell and the upper plastic package shell can protect the field effect transistor main body, chips and circuits inside the field effect transistor main body are prevented from being influenced by corrosive gas and moisture in air, corrosion is prevented, and the service life is prolonged;
(3) Through being provided with conducting strip, heat conduction silicone grease, heat radiation fins, because the inside of lower plastic envelope and last plastic envelope all is equipped with heat radiation structure, the heat conduction silicone grease on conducting strip surface contacts with the field effect transistor main part, has radiating effect, and the conducting strip passes through heat radiation fins with the inside heat of field effect transistor main part outwards transmission, and heat radiation structure's setting makes the heat dissipation space of formation in lower plastic envelope and the last plastic envelope moreover to improved the radiating effect, prevented the too high damage of temperature of field effect transistor main part.
Drawings
FIG. 1 is a schematic cross-sectional elevation view of the present application;
FIG. 2 is a schematic side sectional view of the present application;
FIG. 3 is an enlarged schematic view of the structure of FIG. 2A according to the present application;
FIG. 4 is a schematic cross-sectional view of a lower and upper plastic package of the present application;
FIG. 5 is an enlarged schematic view of the structure of FIG. 4B according to the present application;
fig. 6 is a schematic front view of a main body of a field effect transistor according to the present application;
fig. 7 is a schematic side view of a main body of a field effect transistor according to the present application.
In the figure: 1. a field effect transistor body; 2. pins; 3. a mounting piece; 4. a mounting hole; 5. a lower plastic package shell; 6. a first shielding net; 7. a first groove; 8. a second groove; 9. a plastic package shell is arranged; 10. a second shielding net; 11. a first sheath; 12. a second sheath; 13. a rubber liner; 14. positioning clamping grooves; 15. positioning the protruding blocks; 16. a heat dissipation structure; 1601. a heat conductive sheet; 1602. heat conductive silicone grease; 1603. a heat radiation fin; 17. and (3) a graphene coating.
Detailed Description
The technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present application, and all other embodiments obtained by those skilled in the art without making any inventive effort based on the embodiments of the present application are within the scope of protection of the present application.
Referring to fig. 1-7, an embodiment of the present application is provided: the field effect transistor with the anti-interference plastic package structure comprises a field effect transistor main body 1, pins 2, a mounting sheet 3, a lower plastic package 5 and an upper plastic package 9, wherein the pins 2 are all arranged at the bottom end of the field effect transistor main body 1, the mounting sheet 3 is fixed at the top end of the field effect transistor main body 1, and mounting holes 4 are formed in the mounting sheet 3;
the lower plastic package 5 is arranged below the field effect transistor main body 1, a first shielding net 6 is fixed on the inner wall of the lower plastic package 5, the upper plastic package 9 is arranged above the field effect transistor main body 1, a second shielding net 10 is fixed on the inner wall of the upper plastic package 9, positioning clamping grooves 14 are formed in the outer walls of the lower plastic package 5, which are close to one side of the upper plastic package 9, positioning protruding blocks 15 are arranged on the outer walls of the upper plastic package 9 at the positions of the positioning clamping grooves 14, and the positioning protruding blocks 15 are tightly clamped with the positioning clamping grooves 14;
one side of the inner part of the lower plastic package 5 and one side of the inner part of the upper plastic package 9 are respectively provided with a heat dissipation structure 16;
the bottom ends of the lower plastic package shells 5 are fixed with equidistant first jackets 11, the bottom ends of the upper plastic package shells 9 at the positions of the first jackets 11 are fixed with second jackets 12, and the second jackets 12 are matched with the first jackets 11, so that the pins 2 can be conveniently led out;
the top end of the lower plastic package 5 is provided with a first groove 7, and the top end of the upper plastic package 9 at the position of the first groove 7 is provided with a second groove 8, and the second groove 8 is matched with the first groove 7, so that the mounting sheet 3 is conveniently led out;
the outer surfaces of the lower plastic package 5 and the upper plastic package 9 are coated with the graphene coating 17, so that the electromagnetic shielding function is realized, and the anti-interference performance is further improved;
the first shielding net 6 and the second shielding net 10 are made of red copper, so that the electromagnetic shielding effect is good;
rubber linings 13 are adhered to the inner walls of the first groove 7, the second groove 8, the first sheath 11 and the second sheath 12, so that the tightness of the first groove 7, the second groove 8, the first sheath 11 and the second sheath 12 is improved;
the heat dissipation structure 16 comprises a heat conduction sheet 1601, heat conduction silicone grease 1602 and heat dissipation fins 1603, wherein the heat conduction sheet 1601 is arranged on one side of the inner parts of the lower plastic package 5 and the upper plastic package 9, the heat conduction silicone grease 1602 is coated on the surface of the heat conduction sheet 1601, and the heat conduction silicone grease 1602 is tightly attached to the field effect transistor main body 1, so that the heat dissipation effect is facilitated;
the heat conducting fin 1601 is made of copper, so that the heat conducting effect is good;
the heat dissipation fins 1603 are all fixed on the outer wall of the heat conduction sheet 1601 at the side far away from the heat conduction silicone grease 1602, and one ends of the heat dissipation fins 1603 far away from the heat conduction sheet 1601 are respectively adhered to the inner walls of the lower plastic package 5 and the upper plastic package 9, so that heat dissipation is facilitated.
When the embodiment of the application is used, the following steps are adopted: firstly, the lower plastic package 5 and the upper plastic package 9 are respectively sleeved below and above the field effect transistor main body 1, so that the pins 2 at the bottom end of the field effect transistor main body 1 penetrate out of the first sheath 11 and the second sheath 12, the mounting sheet 3 at the top end of the field effect transistor main body 1 penetrates out of the first groove 7 and the second groove 8, the arrangement of the rubber lining 13 improves the tightness of the first groove 7, the second groove 8, the first sheath 11 and the second sheath 12, then the lower plastic package 5 and the upper plastic package 9 are combined, the positioning convex blocks 15 are clamped into the positioning clamping grooves 14, the lower plastic package 5 and the upper plastic package 9 form a closed whole, the field effect transistor main body 1 can be subjected to plastic package, the lower plastic package 5 and the upper plastic package 9 can protect the field effect transistor main body 1, and chips and circuits inside the field effect transistor main body 1 are prevented from being influenced by corrosive gases and moisture in the air, the first shielding net 6 and the second shielding net 10 are respectively fixed on the inner surfaces of the lower plastic package 5 and the upper plastic package 9, the first shielding net 6 and the second shielding net 10 are made of red copper, and have electromagnetic shielding effect, so that the anti-interference effect is achieved, the graphene coating 17 is coated on the outer surfaces of the lower plastic package 5 and the upper plastic package 9, the graphene coating 17 has electromagnetic shielding function, the anti-interference performance is further improved, and the heat dissipation structures 16 are arranged in the lower plastic package 5 and the upper plastic package 9, the heat conduction silicone grease 1602 on the surface of the heat conduction sheet 1601 is in contact with the field effect transistor main body 1, has heat dissipation effect, the heat conduction sheet 1601 transmits the heat in the field effect transistor main body 1 outwards through the heat dissipation fin 1603, and the heat dissipation structure 16 is arranged to form a heat dissipation space in the lower plastic package 5 and the upper plastic package 9, so that the heat dissipation effect is improved, and the field effect transistor main body 1 is prevented from being damaged due to overhigh temperature.
Claims (9)
1. The field effect transistor with the anti-interference and plastic packaging structure is characterized by comprising a field effect transistor main body (1), pins (2), a mounting plate (3), a lower plastic packaging shell (5) and an upper plastic packaging shell (9), wherein the pins (2) are all arranged at the bottom end of the field effect transistor main body (1), the mounting plate (3) is fixed at the top end of the field effect transistor main body (1), the mounting plate (3) is internally provided with a mounting hole (4), the lower plastic packaging shell (5) is arranged below the field effect transistor main body (1), a first shielding net (6) is fixed on the inner wall of the lower plastic packaging shell (5), the upper plastic packaging shell (9) is arranged above the field effect transistor main body (1), a second shielding net (10) is fixed on the inner wall of the upper plastic packaging shell (9), positioning clamping grooves (14) are formed in the outer walls of one side, close to the upper plastic packaging shell (5), and the positioning clamping grooves (14) are arranged on the outer walls of the positioning clamping grooves (14) and the positioning protruding blocks (15) are arranged on one side of the plastic packaging shell (9), and the positioning protruding blocks (15) are tightly arranged on one side of the positioning protruding blocks (15).
2. The field effect transistor with anti-interference and plastic package structure according to claim 1, wherein: the bottom of the lower plastic package shell (5) is fixed with equidistant first jackets (11), the bottom of the upper plastic package shell (9) at the position of the first jackets (11) is fixed with second jackets (12), and the second jackets (12) are matched with the first jackets (11).
3. The field effect transistor with anti-interference and plastic package structure according to claim 1, wherein: the top of lower plastic envelope (5) is provided with first recess (7), just last plastic envelope (9) top of first recess (7) position department is provided with second recess (8), and second recess (8) cooperate with first recess (7).
4. The field effect transistor with anti-interference and plastic package structure according to claim 1, wherein: the outer surfaces of the lower plastic package (5) and the upper plastic package (9) are coated with graphene coatings (17).
5. The field effect transistor with anti-interference and plastic package structure according to claim 1, wherein: the first shielding net (6) and the second shielding net (10) are made of red copper.
6. The field effect transistor with tamper resistance of claim 3 having a plastic package structure, wherein: rubber linings (13) are adhered to the inner walls of the first groove (7), the second groove (8), the first sheath (11) and the second sheath (12).
7. The field effect transistor with anti-interference and plastic package structure according to claim 1, wherein: the heat dissipation structure (16) comprises a heat conduction sheet (1601), heat conduction silicone grease (1602) and heat dissipation fins (1603), wherein the heat conduction sheet (1601) is arranged on one side of the inner parts of the lower plastic package (5) and the upper plastic package (9), the heat conduction silicone grease (1602) is coated on the surface of the heat conduction sheet (1601), and the heat conduction silicone grease (1602) is tightly attached to the field effect transistor main body (1).
8. The field effect transistor with tamper resistance of claim 7, wherein: the heat conducting fin (1601) is made of copper.
9. The field effect transistor with tamper resistance of claim 7, wherein: the heat dissipation fins (1603) are all fixed on the outer wall of one side, far away from the heat conduction silicone grease (1602), of the heat conduction fins (1601), and one end, far away from the heat conduction fins (1603), of the heat conduction fins is respectively adhered to the inner walls of the lower plastic package shell (5) and the upper plastic package shell (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310887619.8A CN116884927A (en) | 2023-07-19 | 2023-07-19 | Anti-interference field effect transistor with plastic package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310887619.8A CN116884927A (en) | 2023-07-19 | 2023-07-19 | Anti-interference field effect transistor with plastic package structure |
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| Publication Number | Publication Date |
|---|---|
| CN116884927A true CN116884927A (en) | 2023-10-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310887619.8A Pending CN116884927A (en) | 2023-07-19 | 2023-07-19 | Anti-interference field effect transistor with plastic package structure |
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| CN (1) | CN116884927A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729268A (en) * | 2019-09-19 | 2020-01-24 | 广东合科泰实业有限公司 | High-efficient type paster triode with good heat radiation structure |
| CN212365963U (en) * | 2020-06-16 | 2021-01-15 | 深圳市三联盛科技股份有限公司 | Integrated circuit packaging structure with electromagnetic interference prevention structure |
| KR20210046480A (en) * | 2019-10-18 | 2021-04-28 | 엔트리움 주식회사 | Semiconductor package |
| CN114068693A (en) * | 2021-11-15 | 2022-02-18 | 深圳市盟科电子科技有限公司 | Reliable type paster triode |
| CN216749862U (en) * | 2021-12-27 | 2022-06-14 | 深圳市艾格林电子有限公司 | Packaging structure of radio frequency transistor device |
| CN217387137U (en) * | 2022-03-31 | 2022-09-06 | 湖南思微特科技有限公司 | Detachable discrete semiconductor device |
-
2023
- 2023-07-19 CN CN202310887619.8A patent/CN116884927A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729268A (en) * | 2019-09-19 | 2020-01-24 | 广东合科泰实业有限公司 | High-efficient type paster triode with good heat radiation structure |
| KR20210046480A (en) * | 2019-10-18 | 2021-04-28 | 엔트리움 주식회사 | Semiconductor package |
| CN212365963U (en) * | 2020-06-16 | 2021-01-15 | 深圳市三联盛科技股份有限公司 | Integrated circuit packaging structure with electromagnetic interference prevention structure |
| CN114068693A (en) * | 2021-11-15 | 2022-02-18 | 深圳市盟科电子科技有限公司 | Reliable type paster triode |
| CN216749862U (en) * | 2021-12-27 | 2022-06-14 | 深圳市艾格林电子有限公司 | Packaging structure of radio frequency transistor device |
| CN217387137U (en) * | 2022-03-31 | 2022-09-06 | 湖南思微特科技有限公司 | Detachable discrete semiconductor device |
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