CN114068692A - Three-stage pipe with protective structure - Google Patents
Three-stage pipe with protective structure Download PDFInfo
- Publication number
- CN114068692A CN114068692A CN202111337857.9A CN202111337857A CN114068692A CN 114068692 A CN114068692 A CN 114068692A CN 202111337857 A CN202111337857 A CN 202111337857A CN 114068692 A CN114068692 A CN 114068692A
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- Prior art keywords
- groups
- protective
- cover
- sealing cover
- triode
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- 230000001681 protective effect Effects 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000007789 sealing Methods 0.000 claims description 57
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention relates to the technical field of triodes, in particular to a triode with a protection structure, which can effectively avoid the fracture of the joint of a pin amplifier and a semiconductor substrate, improve the service life of the triode and reduce the use limitation; including the semiconductor substrate, three group pin amplifiers, the connecting plate, the protecting crust, three group protective casings, a left side closing cap, right side closing cap and two sets of bolts, the bottom of semiconductor substrate and three group pin amplifiers's top fixed connection, the bottom fixed connection with the connecting plate is connected on the top of semiconductor substrate, sheathed tube cooperation detachable installs on the protecting crust, all be provided with two sets of hinges on left side closing cap and the right closing cap, left side closing cap and right closing cap pass through the rotation of hinge symmetry and install on the protecting crust, the top of left side closing cap and right closing cap all is provided with the fluting, the top of right side closing cap is provided with two sets of bolt boards, the top of left side closing cap is provided with two sets of sockets, two sets of bolts are through the cooperation with the socket respectively fixed mounting on two sets of bolt boards.
Description
Technical Field
The invention relates to the technical field of triodes, in particular to a triode with a protection structure.
Background
The triode is a semiconductor device for controlling current, and has the function of amplifying a weak signal into an electric signal with a large amplitude value and is also used as a contactless switch.
The triode is one of semiconductor basic elements, has the function of current amplification, is a core element of an electronic circuit, and mainly comprises a semiconductor substrate, three groups of pin amplifiers and a connecting plate, wherein the connecting plate is provided with a positioning hole and a clamping groove and is used for installing and fixing the triode.
At present, the connection between a pin amplifier and a semiconductor substrate of the triode is lack of protection, so that the connection between the pin amplifier and the semiconductor substrate is easy to break, the service life of the triode is influenced, and the use limitation is high.
Disclosure of Invention
In order to solve the technical problems, the invention provides the triode with the protection structure, which can effectively avoid the fracture of the joint of the pin amplifier and the semiconductor substrate, improve the service life of the triode and reduce the use limitation.
The invention relates to a triode with a protective structure, which comprises a semiconductor substrate, three groups of pin amplifiers, a connecting plate, a protective shell, three groups of protective sleeves, a left sealing cover, a right sealing cover and two groups of bolts, wherein the bottom end of the semiconductor substrate is fixedly connected with the top ends of the three groups of pin amplifiers, the top end of the semiconductor substrate is fixedly connected with the bottom end of the connecting plate, the connecting plate is provided with a positioning hole and two groups of clamping grooves, the bottom end of the protective shell is provided with three groups of threaded holes, the outer circumferential walls of the three groups of protective sleeves are provided with external threads, the three groups of protective sleeves are rotatably arranged on the protective shell through the matching of the external threads and the threaded holes, the top ends of the three groups of protective sleeves are provided with limiting rings, the semiconductor substrate is detachably arranged on the protective shell through the matching of the pin amplifiers and the protective sleeves, the left sealing cover and the right sealing cover are both provided with two groups of hinges, and the left sealing cover and the right sealing cover are symmetrically arranged on the protective shell through the hinges, the top of left closing cap and right closing cap all is provided with the fluting, and the top of right closing cap is provided with two sets of bolt boards, and the top of left closing cap is provided with two sets of sockets, and two sets of bolts are through the cooperation with the socket respectively fixed mounting on two sets of bolt boards.
According to the three-stage pipe with the protection structure, the protection sleeves are arranged on the circumferential inner walls of the three groups of protection sleeves.
According to the triode with the protection structure, the sealing sleeves are arranged at the grooves of the left sealing cover and the right sealing cover.
According to the triode with the protection structure, the right end of the left sealing cover and the left end of the right sealing cover are both connected with the buffer pads.
The invention relates to a triode with a protective structure, which further comprises two groups of cover handles, wherein the two groups of cover handles are respectively and fixedly arranged on a left sealing cover and a right sealing cover.
According to the triode with the protection structure, the left sealing cover and the right sealing cover are both provided with the observation windows.
According to the triode with the protection structure, the left end and the right end of the protection shell are respectively provided with the plurality of groups of heat dissipation ports.
According to the triode with the protection structure, the fastening sleeves are arranged inside the two groups of sockets.
Compared with the prior art, the invention has the beneficial effects that: firstly, when the pin amplifier is installed, a worker can wear out the pin amplifier from the protective sleeve to enable the semiconductor substrate to be located in the protective shell, then the left sealing cover and the right sealing cover are rotated to enable the plug pin to be inserted into the socket, closing of the left sealing cover and the right sealing cover is completed, the protective sleeve can be adjusted through rotation according to actual conditions during use, the extending length of the protective sleeve on the pin amplifier is adjusted, the protective sleeve achieves protection of the optimal degree of the pin amplifier, therefore, breakage of joints of pins and the semiconductor substrate can be effectively avoided, the service life of the triode is prolonged, and use limitation is reduced.
Drawings
FIG. 1 is a schematic front side view of the present invention;
FIG. 2 is a schematic front side cross-sectional view of the present invention;
FIG. 3 is a schematic view of the left side of the protective shell according to the present invention;
FIG. 4 is a schematic view of the underside of a protective shell according to the present invention;
in the drawings, the reference numbers: 1. a semiconductor substrate; 2. a pin amplifier; 3. a connecting plate; 4. positioning holes; 5. a card slot; 6. a protective shell; 7. a threaded hole; 8. a protective sleeve; 9. an external thread; 10. a limiting ring; 11. a left cover; 12. a right sealing cover; 13. a hinge; 14. a latch plate; 15. a socket; 16. a bolt; 17. a protective sleeve; 18. sealing sleeves; 19. a cushion pad; 20. a cover handle; 21. an observation window; 22. a heat dissipation port; 23. and (7) fastening sleeves.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 1 to 4, the triode with protection structure of the present invention comprises a semiconductor substrate 1, three groups of pin amplifiers 2, a connecting plate 3, a protective shell 6, three groups of protective sleeves 8, a left cover 11, a right cover 12 and two groups of bolts 16, wherein the bottom end of the semiconductor substrate 1 is fixedly connected with the top ends of the three groups of pin amplifiers 2, the top end of the semiconductor substrate 1 is fixedly connected with the bottom end of the connecting plate 3, the connecting plate 3 is provided with a positioning hole 4 and two groups of clamping grooves 5, the bottom end of the protective shell 6 is provided with three groups of threaded holes 7, the circumferential outer walls of the three groups of protective sleeves 8 are provided with external threads 9, the three groups of protective sleeves 8 are rotatably mounted on the protective shell 6 through the matching of the external threads 9 and the threaded holes 7, the top ends of the three groups of protective sleeves 8 are provided with limiting rings 10, the semiconductor substrate 1 is detachably mounted on the protective shell 6 through the matching of the pin amplifiers 2 and the protective sleeves 8, two groups of hinges 13 are arranged on the left sealing cover 11 and the right sealing cover 12, the left sealing cover 11 and the right sealing cover 12 are symmetrically and rotatably arranged on the protective shell 6 through the hinges 13, grooves are formed in the top ends of the left sealing cover 11 and the right sealing cover 12, two groups of bolt plates 14 are arranged on the top end of the right sealing cover 12, two groups of sockets 15 are arranged on the top end of the left sealing cover 11, and two groups of bolts 16 are fixedly arranged on the two groups of bolt plates 14 respectively through matching with the sockets 15; firstly, when the triode is installed, a worker can wear out the pin amplifier 2 from the protective sleeve 8 to enable the semiconductor substrate 1 to be located in the protective shell 6, then the left sealing cover 11 and the right sealing cover 12 are rotated to enable the plug 16 to be inserted into the socket 15, and the left sealing cover 11 and the right sealing cover 12 are closed.
According to the three-stage pipe with the protection structure, the protection sleeves 17 are arranged on the circumferential inner walls of the three groups of protection sleeves 8; through setting up lag 17, can prevent effectively that when adjusting lag pipe 8 in the rotation, cause wearing and tearing to the outer wall of pin amplifier 2, make pin amplifier 2 obtain further protection, improve and use the reliability.
According to the triode with the protection structure, the sealing sleeves 18 are arranged at the grooves of the left sealing cover 11 and the right sealing cover 12; through setting up seal cover 18, can make left closing cap 11 and right closing cap 12 when the closure with the connecting plate 3 complex inseparabler, improve the reliability in utilization.
According to the triode with the protection structure, the right end of the left sealing cover 11 and the left end of the right sealing cover 12 are both provided with the buffer pads 19 in a connecting manner; through setting up blotter 19, can effectively prevent left closing cap 11 and right closing cap 12 when closing and bump, the leakproofness when reinforcing left closing cap 11 and left closing cap 11 simultaneously improves the reliability of use.
The invention relates to a triode with a protective structure, which further comprises two groups of cover handles 20, wherein the two groups of cover handles 20 are respectively and fixedly arranged on a left sealing cover 11 and a right sealing cover 12; through setting up lid handle 20, can make the switching of left closing cap 11 and right closing cap 12 more convenient, reduce the use limitation.
According to the triode with the protection structure, the left sealing cover 11 and the right sealing cover 12 are both provided with the observation windows 21; through setting up observation window 21, can be convenient for observe semiconductor substrate 1's in service behavior, be convenient for in time overhaul, reduce the use limitation.
According to the triode with the protection structure, the left end and the right end of the protection shell 6 are respectively provided with a plurality of groups of radiating holes 22; by arranging the heat dissipation port 22, heat generated by the semiconductor substrate 1 during operation can be dissipated, the temperature inside the protective shell 6 can be kept normal, and the use reliability can be improved.
In the triode with the protection structure, the fastening sleeves 23 are arranged inside the two groups of sockets 15; through setting up adapter sleeve 23, can make 16 insertedly inseparabler, improve the reliability in utilization.
When the triode with the protection structure works, firstly, when the triode is installed, a worker can penetrate the pin amplifier 2 out of the protection sleeve 8 to enable the semiconductor substrate 1 to be located in the protection shell 6, then the left sealing cover 11 and the right sealing cover 12 are rotated to enable the plug pin 16 to be inserted into the socket 15 to complete the closing of the left sealing cover 11 and the right sealing cover 12, and when the triode is used, the protection sleeve 8 can be adjusted through rotation according to actual conditions to adjust the extending length of the protection sleeve 8 on the pin amplifier 2, so that the protection sleeve 8 can protect the pin amplifier 2 to the optimal degree.
The installation mode, the connection mode or the arrangement mode of the triode with the protection structure are common mechanical modes, and the triode with the protection structure can be implemented as long as the beneficial effects of the triode can be achieved; those skilled in the art can install and operate the device according to the attached instructions.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A triode with a protection structure is characterized by comprising a semiconductor substrate (1), three groups of pin amplifiers (2), a connecting plate (3), a protective shell (6), three groups of protective sleeves (8), a left sealing cover (11), a right sealing cover (12) and two groups of bolts (16), wherein the bottom end of the semiconductor substrate (1) is fixedly connected with the top ends of the three groups of pin amplifiers (2), the top end of the semiconductor substrate (1) is fixedly connected with the bottom end of the connecting plate (3), the connecting plate (3) is provided with a positioning hole (4) and two groups of clamping grooves (5), the bottom end of the protective shell (6) is provided with three groups of threaded holes (7), the outer walls of the circumferences of the three groups of protective sleeves (8) are all provided with external threads (9), the three groups of protective sleeves (8) are rotatably installed on the protective shell (6) through the matching of the external threads (9) and the threaded holes (7), the top of three groups of protective sleeves (8) is provided with a limiting ring (10), a semiconductor substrate (1) is detachably mounted on a protective shell (6) through the cooperation of a pin amplifier (2) and the protective sleeves (8), two groups of hinges (13) are arranged on a left sealing cover (11) and a right sealing cover (12), the left sealing cover (11) and the right sealing cover (12) are mounted on the protective shell (6) through the rotation of the hinges (13) symmetrically, the top of the left sealing cover (11) and the top of the right sealing cover (12) are provided with grooves, the top of the right sealing cover (12) is provided with two groups of plug pin plates (14), the top of the left sealing cover (11) is provided with two groups of sockets (15), and the two groups of plugs (16) are fixedly mounted on the two groups of plug pin plates (14) respectively through the cooperation with the sockets (15).
2. A triode with protective structure according to claim 1, wherein the three sets of protective casings (8) are provided with protective casings (17) on the inner circumferential walls thereof.
3. A protective structure tube as claimed in claim 2, wherein the sealing sleeve (18) is arranged at the groove of the left cover (11) and the right cover (12).
4. A protective structure of a tertiary pipe as claimed in claim 3, wherein the right end of the left cover (11) and the left end of the right cover (12) are connected with a buffer pad (19).
5. A triode with protective structure according to claim 4, further comprising two sets of cover handles (20), wherein the two sets of cover handles (20) are fixedly installed on the left cover (11) and the right cover (12), respectively.
6. A triode with protective structure according to claim 5, wherein each of the left cover (11) and the right cover (12) is provided with a viewing window (21).
7. The triode with protective structure according to claim 6, wherein the left and right ends of the protective shell (6) are provided with a plurality of sets of heat dissipating ports (22).
8. A triode with protective structure according to claim 7, characterized in that the fastening sleeves (23) are arranged inside the two groups of sockets (15).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111337857.9A CN114068692A (en) | 2021-11-12 | 2021-11-12 | Three-stage pipe with protective structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111337857.9A CN114068692A (en) | 2021-11-12 | 2021-11-12 | Three-stage pipe with protective structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114068692A true CN114068692A (en) | 2022-02-18 |
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ID=80275275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111337857.9A Pending CN114068692A (en) | 2021-11-12 | 2021-11-12 | Three-stage pipe with protective structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114068692A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN212365951U (en) * | 2020-06-16 | 2021-01-15 | 深圳市三联盛科技股份有限公司 | Detachable discrete semiconductor device |
| CN212461660U (en) * | 2020-06-19 | 2021-02-02 | 眉山国芯科技有限公司 | Safety transistor |
-
2021
- 2021-11-12 CN CN202111337857.9A patent/CN114068692A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN212365951U (en) * | 2020-06-16 | 2021-01-15 | 深圳市三联盛科技股份有限公司 | Detachable discrete semiconductor device |
| CN212461660U (en) * | 2020-06-19 | 2021-02-02 | 眉山国芯科技有限公司 | Safety transistor |
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