CN114063357B - 薄膜晶体管基板与液晶显示面板 - Google Patents

薄膜晶体管基板与液晶显示面板 Download PDF

Info

Publication number
CN114063357B
CN114063357B CN202010769080.2A CN202010769080A CN114063357B CN 114063357 B CN114063357 B CN 114063357B CN 202010769080 A CN202010769080 A CN 202010769080A CN 114063357 B CN114063357 B CN 114063357B
Authority
CN
China
Prior art keywords
metal layer
layer
thin film
film transistor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010769080.2A
Other languages
English (en)
Other versions
CN114063357A (zh
Inventor
许琪
王涛
肖晟
王慧
柳智忠
戴孟杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Century Display Shenzhen Co Ltd
Original Assignee
Century Display Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Century Display Shenzhen Co Ltd filed Critical Century Display Shenzhen Co Ltd
Priority to CN202010769080.2A priority Critical patent/CN114063357B/zh
Priority to TW109126748A priority patent/TWI754343B/zh
Priority to US17/118,946 priority patent/US11067861B1/en
Publication of CN114063357A publication Critical patent/CN114063357A/zh
Application granted granted Critical
Publication of CN114063357B publication Critical patent/CN114063357B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136204Arrangements to prevent high voltage or static electricity failures
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133388Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0292Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/22Antistatic materials or arrangements

Abstract

一种薄膜晶体管基板,具有显示区和围绕显示区的非显示区,薄膜晶体管基板包括基板;以及位于所述基板上且位于所述非显示区的静电防护结构。该静电防护结构包括位于非显示区的放电金属层与透明导电层,放电金属层与透明导电层部分重叠且电性连接。所述透明导电层与所述放电金属层分别从二者重叠的部分反向延伸,且所述透明导电层延伸的宽度大于所述放电金属层延伸的宽度。本发明还提供一种包括所述薄膜晶体管基板的液晶显示面板。

Description

薄膜晶体管基板与液晶显示面板
技术领域
本发明涉及一种薄膜晶体管基板与液晶显示面板。
背景技术
显示面板的制备过程中会产生静电,受显示面板中基板不导电性质的限制,静电无导出途径,被集聚在显示面板内部,进而发生静电放电现象,破坏显示面板内部结构,影响显示面板的正常工作。
现有的静电防护结构大多数采用金属线路加宽设计,金属线路的加宽可增加静电放电的路径,大面积的金属吸收静电,静电通过整条金属线路消散,但由于对金属线路的加宽,金属的不透光性会影响面板边框处的框胶固化能力。因此如何兼顾静电释放(Electro-Static Discharge,ESD)防护能力及框胶固化的稳定性,已经成为生产制造过程中的急需解决的问题。
发明内容
鉴于此,有必要提供一种薄膜晶体管基板,所述薄膜晶体管基板包括静电防护结构,在加强ESD防护能力的同时不会影响显示面板边框处的框胶的固化作用。
一种薄膜晶体管基板,具有显示区与围绕所述显示区的非显示区,包括:
基板,以及位于所述基板上且位于所述非显示区的静电防护结构,所述静电防护结构包括放电金属层及与所述放电金属层部分重叠且电性连接的透明导电层;
所述透明导电层与所述放电金属层分别从二者重叠的部分反向延伸,且所述透明导电层延伸的宽度大于所述放电金属层延伸的宽度。
本发明还提供一种液晶显示面板,包括:
所述薄膜晶体管基板、对应所述薄膜晶体管基板设置的彩色滤光基板以及设置于所述薄膜晶体管基板与所述彩色滤光基板之间的液晶层。
相对于现有技术,所述薄膜晶体管基板包括静电防护结构,所述静电防护结构包括所述放电金属层,以及与所述放电金属层部分重叠且电性连接的所述透明导电层,所述透明导电层延伸的宽度大于所述放电金属层延伸的宽度。所述透明导电层和所述放电金属层皆用于静电放电。因此,相对于单独使用所述放电金属层静电放电,利用透光性的透明导电层加宽了所述静电防护结构的宽度,而不需要加宽不透光性的放电金属层,进而避免所述放电金属层加宽造成面板边框处框胶固化不足的现象。
附图说明
图1为本发明实施例的所述薄膜晶体管基板与静电防护结构的俯视平面图。
图2为第一实施例的薄膜晶体管基板的非显示区的剖面图。
图3为本发明第二实施例的薄膜晶体管基板的非显示区的剖面图。
图4为本发明第三实施例的液晶显示面板的剖面图。
主要元件符号说明
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例进行描述,显然,描述的实施例仅仅是本申请的一部分实施例,而不是全部的实施例。
实施例一:
参阅图1,本发明第一实施例的薄膜晶体管基板100,其具有显示区10A和围绕所述显示区10A的非显示区10B。所述薄膜晶体管基板100包括位于所述非显示区10B的静电防护结构200和印刷电路板300。所述静电防护结构200延伸环绕所述显示区10A一圈并与所述印刷电路板300电性连接。所述印刷电路板300为所述薄膜晶体管基板100提供信号。在本实施例中,所述印刷电路板300可为所述静电防护结构200提供静电放电过程中所需的接地信号,以便静电能有效地通过所述静电防护结构200释放。在本实施例中,所述印刷电路板300可以为柔性电路板(FPC)。
参照图1和图2,所述静电防护结构200包括放电金属层201与透明导电层202,所述放电金属层201与所述透明导电层202部分重叠接触且电性连接。所述透明导电层202与所述放电金属层201分别从二者重叠的部分反向延伸,所述透明导电层202延伸的宽度大于所述放电金属层201延伸的宽度。所述放电金属层201与所述透明导电层202均延伸环绕所述显示区一圈。
参照图2,所述薄膜晶体管基板100包括基板101、位于所述基板101上的第一金属层102、位于所述基板101上且覆盖所述第一金属层102的第一绝缘层103、位于所述第一绝缘层103上的第二金属层104,以及位于所述第一绝缘层103上且覆盖所述第二金属层104的第二绝缘层105。由于图2仅示出所述薄膜晶体管基板100的所述非显示区10B的情况,实际的所述第一金属层102、所述第二金属层104、所述第一绝缘层103和所述第二绝缘层105还有延伸覆盖到所述显示区10A。
在本实施例中,所述静电防护结构200位于所述第一绝缘层103上,所述透明导电层202位于所述第一绝缘层103上,所述放电金属层201和所述第二金属层104为由同一层金属图案化形成,且所述第二绝缘层105覆盖所述第二金属层104及所述静电防护结构200的所述透明导电层202与所述放电金属层201。所述静电防护结构200用于静电放电,例如,所述静电防护结构200可与所述薄膜晶体管基板100的所述显示区10A内像素单元电性连接用以释放像素单元中的静电,从而保证面板正常显示。
进一步参照图1,所述透明导电层202与所述放电金属层201为沿远离二者重叠的部分以反向方式延伸。所述透明导电层202沿远离二者重叠的部分延伸方向与所述放电金属层201沿远离二者重叠部分的延伸方向互为图1中所示的D1和D2,D1和D2为反向的。在本实施例中,参照图1中所述静电防护结构200的局部放大部分,所述透明导电层202沿远离二者重叠部分的延伸方向为D1,所述放电金属层201沿远离二者重叠部分的延伸方向为D2。所述透明导电层202包括沿D1方向靠近所述显示区10A的端部202a与远离所述显示区10A的端部202b,所述端部202a与所述端部202b之间的距离为所述透明导电层202的宽度L2。所述放电金属层201包括沿D2方向靠近所述非显示区10B的端部201a与远离所述非显示区10B的端部201b,所述端部201a与所述端部201b之间的距离为所述放电金属层201的宽度L1。所述端部201a到所述端部202a之间的距离为所述透明导电层202与所述放电金属层201部分重叠后的总宽度L0,L0大于所述透明导电层202的宽度L2与所述放电金属层201的宽度L1中的任意一个,所述透明导电层202的宽度L2大于所述放电金属层201的宽度L1。在合理的面板设计情况下,L2比L1越大越好,有利于用透光性的所述透明导电层202来释放静电。在其他实施例中,所述透明导电层202沿远离二者重叠部分的延伸方向可为D2,所述放电金属层201沿远离二者重叠部分的延伸方向可为D1。
现有静电放电结构设计中采用加宽用于静电放电的金属线路来加大静电放电的路径,但由用于静电放电的金属线路的加宽,金属的不透光性容易造成面板边框处的框胶固化不足的问题。在本实施例中,所述静电防护结构200用于静电放电,即采用所述放电金属层201及与所述放电金属层201部分重叠接触且电性连接的所述透明导电层202用于静电放电,如此,利用透光性的透明导电层202加宽了所述静电防护结构200的宽度,而不需要加宽不透光性的放电金属层201,进而避免所述放电金属层201加宽造成面板边框处框胶固化不足的现象。
在本实施例中,所述透明导电层202的材料为氧化铟锡、氧化锌或铝掺杂的氧化锌,可以理解的,所述透明导电层202的材料不限于氧化铟锡、氧化锌或铝掺杂的氧化锌。所述基板101可以为透明玻璃基板。
在本实施例中,所述薄膜晶体管基板100还包括位于所述基板101上且位于所述显示区10A的薄膜晶体管(图未示),所述放电金属层201与所述薄膜晶体管的功能电极为由同一层金属图案化形成。图2中仅示出所述第二金属层104位于所述非显示区10B的部分,实际其也部分覆盖所述显示区10A,从而所述第二金属层104的部分构成所述薄膜晶体管的源极和漏极(图未示)。在本实施例中,所述功能电极可为所述薄膜晶体管的源极与漏极。
进一步参照图2,所述薄膜晶体管基板100还包括导电连接层106。所述第一绝缘层103与所述第二绝缘层105中开设有暴露所述第一金属层102的第一开口107,所述第二绝缘层105中开设有暴露所述第二金属层104的第二开口108,所述导电连接层106形成于所述第二绝缘层105上并延伸至所述第一开口107与所述第二开口108内,从而实现所述第一金属层102与所述第二金属层104的电性连接。
在本实施例中,所述导电连接层106可以为透明导电层,所述导电连接层106的材料为氧化铟锡、氧化锌或铝掺杂的氧化锌,但并不限于此。
实施例二:
参照图3,本发明实施例二的薄膜晶体管基板400,所述薄膜晶体管基板400与本发明实施例一的薄膜晶体管基板100的区别在于:所述第一金属层102与所述第二金属层104不是通过导电连接层106、第一开口107及第二开口108电性连接。
在本实例中,所述薄膜晶体管基板400包括基板101、位于所述基板101上的第一金属层102、位于所述基板101上且覆盖所述第一金属层102的第一绝缘层103、位于所述第一绝缘层103上第二金属层104;以及位于所述第一绝缘层103上且覆盖所述第二金属层104的第二绝缘层105。所述第一绝缘层103开设有暴露所述第一金属层102的第三开口109,所述第二金属层104与所述第一金属层102通过第三开口109电性连接。
所述薄膜晶体管基板400与所述薄膜晶体管基板100为制程不一样的薄膜晶体管基板。所述静电防护结构200皆适用于所述薄膜晶体管基板400与所述薄膜晶体管基板100,但不限于这两种薄膜晶体管基板。
实施例三:
参照图4,本发明实施例三的液晶显示面板500。所述液晶显示面板500包括所述薄膜晶体管基板100、对应所述薄膜晶体管基板100设置的彩色滤光基板600以及设置于所述薄膜晶体管基板100与所述彩色滤光基板600之间的液晶层700。
所述液晶显示面板500应用于需要设置显示屏的电子装置,所述电子装置例如(但不限于):移动电话、移动电视、智能电话、蓝牙装置、无线电子邮件接收器、手持型或携带型计算机、迷你笔记型计算机、笔记型计算机、智能本、平板计算机、打印机、复印机、扫描仪、传真机、全球定位系统(GPS)接收器/导航仪、摄影机、数字媒体播放器、摄录像机、游戏控制面板、腕表、钟表、计算器、电视监视器、平板显示器、电子阅读装置(例如,电子阅读器)、移动健康装置、计算机监视器、汽车显示器(包含里程计显示器及速度计显示器等)、驾驶舱控制件及/或显示器、摄影机景观显示器(例如,车辆中的后视摄影机的显示器)、电子照片、电子广告牌或标识、投影仪、冰箱、洗涤器、干燥器、洗涤器/干燥器、美观结构(例如,关于一件珠宝或衣服的影像显示),但并不以此为限。
综上所述,所述静电防护结构200用于静电放电,即采用所述放电金属层201及与所述放电金属层201部分重叠接触且电性连接的所述透明导电层202用于静电放电,如此,利用透光性的透明导电层202加宽了所述静电防护结构200的宽度,而不需要加宽不透光性的放电金属层201,进而避免所述放电金属层201加宽造成面板边框处框胶固化不足的现象。
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。最后应说明的是,以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或等同替换,而不脱离本发明技术案的范围。

Claims (9)

1.一种薄膜晶体管基板,具有显示区和围绕所述显示区的非显示区,所述薄膜晶体管基板包括基板,以及位于所述基板上且位于所述非显示区的静电防护结构,其特征在于,
所述静电防护结构包括放电金属层及与所述放电金属层部分重叠接触且电性连接的透明导电层;
所述透明导电层与所述放电金属层分别从二者重叠的部分反向延伸,且所述透明导电层延伸的宽度大于所述放电金属层延伸的宽度。
2.如权利要求1所述的薄膜晶体管基板,其特征在于,所述放电金属层与所述透明导电层均延伸环绕所述显示区一圈。
3.如权利要求2所述的薄膜晶体管基板,其特征在于,所述薄膜晶体管基板还包括位于所述非显示区的印刷电路板,所述静电防护结构与所述印刷电路板电性连接。
4.如权利要求1所述的薄膜晶体管基板,其特征在于,所述薄膜晶体管基板还包括:位于所述基板上的第一金属层、位于所述基板上且覆盖所述第一金属层的第一绝缘层,位于所述第一绝缘层上的第二金属层;以及位于所述第一绝缘层上且覆盖所述第二金属层的第二绝缘层。
5.如权利要求4所述的薄膜晶体管基板,其特征在于,所述静电防护结构位于所述第一绝缘层上,所述透明导电层位于所述第一绝缘层上,所述放电金属层和所述第二金属层为由同一层金属图案化形成,且所述第二绝缘层覆盖所述第二金属层、所述透明导电层与所述放电金属层。
6.如权利要求5所述的薄膜晶体管基板,其特征在于,所述薄膜晶体管基板还包括位于所述基板上的且位于所述显示区的薄膜晶体管,所述放电金属层与所述薄膜晶体管的功能电极为由同一层金属图案化形成,且所述第二金属层的部分构成所述薄膜晶体管的功能电极。
7.如权利要求5所述的薄膜晶体管基板,其特征在于,所述薄膜晶体管基板还包括导电连接层;所述第一绝缘层与所述第二绝缘层中开设有暴露所述第一金属层的第一开口,所述第二绝缘层中开设有暴露所述第二金属层的第二开口,所述导电连接层形成于所述第二绝缘层上并延伸至所述第一开口与所述第二开口内从而实现所述第一金属层与所述第二金属层的电性连接。
8.如权利要求5所述的薄膜晶体管基板,其特征在于,所述第一绝缘层开设有暴露所述第一金属层的第三开口,所述第二金属层与所述第一金属层通过所述第三开口电性连接。
9.一种液晶显示面板,包括如权利要求1至8任意一项所述薄膜晶体管基板、对应所述薄膜晶体管基板设置的彩色滤光基板以及设置于所述薄膜晶体管基板与所述彩色滤光基板之间的液晶层。
CN202010769080.2A 2020-08-03 2020-08-03 薄膜晶体管基板与液晶显示面板 Active CN114063357B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202010769080.2A CN114063357B (zh) 2020-08-03 2020-08-03 薄膜晶体管基板与液晶显示面板
TW109126748A TWI754343B (zh) 2020-08-03 2020-08-06 薄膜電晶體基板與液晶顯示面板
US17/118,946 US11067861B1 (en) 2020-08-03 2020-12-11 Thin film transistor substrate having electrostatic protection structure and liquid crystal display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010769080.2A CN114063357B (zh) 2020-08-03 2020-08-03 薄膜晶体管基板与液晶显示面板

Publications (2)

Publication Number Publication Date
CN114063357A CN114063357A (zh) 2022-02-18
CN114063357B true CN114063357B (zh) 2023-09-12

Family

ID=76861577

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010769080.2A Active CN114063357B (zh) 2020-08-03 2020-08-03 薄膜晶体管基板与液晶显示面板

Country Status (3)

Country Link
US (1) US11067861B1 (zh)
CN (1) CN114063357B (zh)
TW (1) TWI754343B (zh)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101630078A (zh) * 2008-07-17 2010-01-20 胜华科技股份有限公司 液晶显示面板
KR20100066231A (ko) * 2008-12-09 2010-06-17 하이디스 테크놀로지 주식회사 액정표시장치의 제조방법
CN203117594U (zh) * 2012-12-24 2013-08-07 上海中航光电子有限公司 静电防护环及带有该防护环的液晶显示面板
CN103500741A (zh) * 2013-10-15 2014-01-08 深圳市华星光电技术有限公司 阵列基板的防静电结构
CN104122690A (zh) * 2013-08-23 2014-10-29 深超光电(深圳)有限公司 液晶显示装置以及显示装置
TW201516523A (zh) * 2013-10-24 2015-05-01 Chunghwa Picture Tubes Ltd 顯示面板
CN206209683U (zh) * 2016-10-19 2017-05-31 苏州维业达触控科技有限公司 一种透明导电膜及电容触控传感器及触控显示装置
CN107422559A (zh) * 2017-08-31 2017-12-01 武汉华星光电技术有限公司 阵列基板和液晶显示面板
CN108766994A (zh) * 2018-06-20 2018-11-06 武汉天马微电子有限公司 有机发光显示面板和有机发光显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI376544B (en) * 2008-06-16 2012-11-11 Wintek Corp Liquid crystal display panel
US8310609B2 (en) * 2008-09-30 2012-11-13 Sony Corporation Liquid crystal device, electronic apparatus, and method of manufacturing liquid crystal device
KR102113607B1 (ko) * 2013-08-30 2020-05-21 엘지디스플레이 주식회사 액정 표시 장치 및 그의 제조 방법
CN105489596B (zh) * 2016-01-04 2019-05-21 京东方科技集团股份有限公司 一种阵列基板及制作方法
CN109427817B (zh) * 2017-08-30 2020-09-15 瀚宇彩晶股份有限公司 薄膜晶体管基板以及显示器
US10345659B2 (en) * 2017-08-31 2019-07-09 Wuhan China Star Optoelectronics Technology Co., Ltd. Array substrate and liquid crystal display panel
TWI648574B (zh) * 2018-02-22 2019-01-21 友達光電股份有限公司 顯示面板
CN111128969B (zh) * 2019-12-13 2021-08-24 昆山国显光电有限公司 显示面板及显示装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101630078A (zh) * 2008-07-17 2010-01-20 胜华科技股份有限公司 液晶显示面板
KR20100066231A (ko) * 2008-12-09 2010-06-17 하이디스 테크놀로지 주식회사 액정표시장치의 제조방법
CN203117594U (zh) * 2012-12-24 2013-08-07 上海中航光电子有限公司 静电防护环及带有该防护环的液晶显示面板
CN104122690A (zh) * 2013-08-23 2014-10-29 深超光电(深圳)有限公司 液晶显示装置以及显示装置
CN103500741A (zh) * 2013-10-15 2014-01-08 深圳市华星光电技术有限公司 阵列基板的防静电结构
TW201516523A (zh) * 2013-10-24 2015-05-01 Chunghwa Picture Tubes Ltd 顯示面板
CN206209683U (zh) * 2016-10-19 2017-05-31 苏州维业达触控科技有限公司 一种透明导电膜及电容触控传感器及触控显示装置
CN107422559A (zh) * 2017-08-31 2017-12-01 武汉华星光电技术有限公司 阵列基板和液晶显示面板
CN108766994A (zh) * 2018-06-20 2018-11-06 武汉天马微电子有限公司 有机发光显示面板和有机发光显示装置

Also Published As

Publication number Publication date
US11067861B1 (en) 2021-07-20
TW202206917A (zh) 2022-02-16
TWI754343B (zh) 2022-02-01
CN114063357A (zh) 2022-02-18

Similar Documents

Publication Publication Date Title
CN102193678B (zh) 触摸面板及其制造方法
CN102193679B (zh) 具有输入功能的电光装置
US9798203B2 (en) Semiconductor device and display device
US10324346B2 (en) Display device
US7663726B2 (en) Liquid crystal apparatus and electronic apparatus
US10656476B2 (en) Liquid crystal panel
US9366933B2 (en) Semiconductor display device comprising an upper and lower insulator arranged in a non-display area
CN106257324B (zh) 内嵌式触控显示装置
US9443885B2 (en) Semiconductor device and display device
US6486412B2 (en) Wiring board, method for producing same, display device, and electronic device
EP2955612A1 (en) Touch display device and touch substrate
KR20090101838A (ko) 실장 구조체, 전기 광학 장치 및 전자 기기
US6819376B1 (en) Liquid crystal display device with a light-shielding portion
US20180373091A1 (en) Display panel
CN107367875B (zh) 显示装置
JP2009053472A (ja) 液晶装置および電子機器
JP2009192976A (ja) 電気光学装置および電子機器
KR101432891B1 (ko) 액정표시장치
CN114063357B (zh) 薄膜晶体管基板与液晶显示面板
KR101667055B1 (ko) 표시장치 및 그 제조방법
JP3760973B2 (ja) 電気光学装置およびその製造方法ならびに電子機器
JP2009020273A (ja) 電気光学装置の製造方法及び電気光学装置並びに電子機器
CN219893494U (zh) 显示面板和显示设备
US20090147198A1 (en) Liquid crystal display device and electronic equipment
JP4201052B2 (ja) 液晶表示装置及びそれを用いた電子機器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant