CN114050384A - Low-temperature co-fired ceramic duplexer - Google Patents
Low-temperature co-fired ceramic duplexer Download PDFInfo
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- CN114050384A CN114050384A CN202111559009.2A CN202111559009A CN114050384A CN 114050384 A CN114050384 A CN 114050384A CN 202111559009 A CN202111559009 A CN 202111559009A CN 114050384 A CN114050384 A CN 114050384A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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Abstract
The invention discloses a low-temperature co-fired ceramic duplexer, which adopts a ceramic substrate with the dielectric loss less than 0.001 and the dielectric constant of 40, adopts a 2-order design for a low-pass band filtering structure, forms 2 transmission zero points outside a band and can meet the requirement of out-of-band high suppression; and the duplexer has small integral size and can achieve the purposes of miniaturization and mass production.
Description
Technical Field
The invention relates to a low-temperature co-fired ceramic duplexer.
Background
The duplexer (different frequency duplex radio station) is the main accessory of the relay station, and the duplexer can isolate the transmitting and receiving signals, so that the receiving and transmitting can not affect the normal operation respectively. The practical application of the duplexer requires that the low-pass band filtering structure (i.e. low-frequency pass band filter) can achieve high out-of-band rejection, and also requires that the whole duplexer can be miniaturized.
Disclosure of Invention
The invention provides a low-temperature co-fired ceramic duplexer, which adopts a ceramic substrate with the dielectric loss less than 0.001 and the dielectric constant of 40, adopts a 2-order design for a low-pass band filter structure, forms 2 transmission zeros outside a band and achieves out-of-band high suppression.
Preferably, a first ground port, a common port, a second ground port, a high-frequency band-pass output port, a third ground port and a low-frequency band output port are arranged on the outer side wall of the ceramic substrate.
Preferably, a low-pass band filter structure for separating the low-frequency band signal is arranged in the ceramic substrate, so that the low-pass band filter structure is located between the common port and the low-frequency band output port.
Preferably, the low-pass band filtering structure includes:
a first capacitive structure proximate the common port;
a third capacitive structure adjacent the low band output port;
a fourth capacitive structure proximate the second ground port;
a fifth capacitive structure proximate the first ground port;
the first inductance structure is positioned between the fourth capacitance structure and the high-frequency band-pass output port;
a second inductive structure located above the first inductive structure;
a fourth inductive structure proximate the third ground port;
a second capacitive structure located between the first capacitive structure and the fourth inductive structure;
and a third inductive structure located between the third capacitive structure and the fifth capacitive structure.
Preferably, the first capacitor structure is used as an input capacitor with low frequency; making the third capacitor structure an output capacitor of low frequency; forming a transmission pole by the first inductance structure and the fourth capacitance structure; and the third inductance structure and the fifth capacitance structure form the other transmission pole of the low pass band.
Preferably, the high-frequency band-pass output port, the third ground port and the low-frequency band output port are located on the same side of the ceramic substrate, and the third ground port is located between the high-frequency band-pass output port and the low-frequency band output port.
Preferably, the first ground port is located opposite the low band output port, and the first ground port is directly opposite the low band output port.
Preferably, the common port is located opposite the third ground port, and the common port is directly opposite the third ground port.
Preferably, the second ground port is located opposite the high-frequency band-pass output port, and the second ground port is opposite the high-frequency band-pass output port.
Preferably, the overall dimensions are 1.6mm by 0.8mm by 0.6 mm.
The invention has the advantages and beneficial effects that: the low-pass band filtering structure of the low-temperature co-fired ceramic duplexer adopts a 2-order design, 2 transmission zeros are formed outside a band, and the requirement of out-of-band high suppression can be met; and the duplexer has small integral size and can achieve the purposes of miniaturization and mass production.
Drawings
Fig. 1 is an equivalent circuit diagram of a low-pass band filtering structure of a duplexer of the present invention;
fig. 2 is a schematic packaging diagram of the duplexer of the present invention;
fig. 3 and 4 are diagrams of the low-pass band filtering structure of the duplexer of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a miniaturized low-temperature co-fired ceramic duplexer, which comprises a ceramic substrate 100 with the overall size of 1.6mm multiplied by 0.8mm multiplied by 0.6mm, the dielectric loss of less than 0.001 and the dielectric constant of 40, as shown in figures 2 to 4;
the ceramic base 100 is provided with: a first ground port P1, a common port P2, a second ground port P3, a high frequency band pass output port P4, a third ground port P5, a low frequency band output port P6;
set up six circuit layers that from top to bottom set gradually at ceramic base member 100 is inside: first to sixth circuit layers; and forming: a low-pass band filtering structure (i.e. a low-frequency pass band filter) for separating out low-frequency band signals, and a high-pass band filtering structure (i.e. a high-frequency pass band filter) for separating out high-frequency band pass signals;
specifically, the method comprises the following steps:
the first ground port P1 is located at the opposite side of the low-band output port P6, and the first ground port P1 is opposite to and symmetrically arranged with respect to the low-band output port P6;
the common port P2 is positioned opposite to the third ground port P5, and the common port P2 is opposite to and symmetrically arranged with respect to the third ground port P5;
the second ground port P3 is located at the opposite side of the high-frequency band-pass output port P4, and the second ground port P3 is opposite to and symmetrically arranged with respect to the high-frequency band-pass output port P4;
the high-frequency band-pass output port P4, the third ground port P5, and the low-frequency band output port P6 are located on the same side of the ceramic substrate 100, and the third ground port P5 is located between the high-frequency band-pass output port P4 and the low-frequency band output port P6;
the low-band filtering structure is located between the common port P2 and the low-band output port P6; locating the high-pass band filtering structure between the common port P2 and the high-frequency band-pass output port P4; and the low-pass band filtering structure is positioned below the high-pass band filtering structure;
the low-pass band filtering structure of the duplexer comprises five capacitor structures and four inductor structures:
1) the first capacitive structure 11 near the common port P2,
2) a third capacitive structure 13 adjacent the low band output port P6,
3) the fourth capacitive structure 14 adjacent the second ground port P3,
4) a fifth capacitive structure 15 adjacent the first ground port P1,
5) a first inductive structure 21 located between the fourth capacitive structure 14 and the high frequency bandpass output port P4,
6) a second inductive structure 22 located above the first inductive structure 21,
7) the fourth inductive structure 24 adjacent the third ground port P5,
8) a second capacitive structure 12 located between the first capacitive structure 11 and the fourth inductive structure 24,
9) a third inductive structure 23 located between the third capacitive structure 13 and the fifth capacitive structure 15;
an equivalent circuit diagram of a low-pass band filtering structure of the duplexer is shown in fig. 1, and the circuit diagram comprises five capacitors and four inductors;
specifically, the five capacitors are respectively: a first capacitor C1 mainly formed by the first capacitor structure 11, a second capacitor C2 mainly formed by the second capacitor structure 12, a third capacitor C3 mainly formed by the third capacitor structure 13, a fourth capacitor C4 mainly formed by the fourth capacitor structure 14, and a fifth capacitor C5 mainly formed by the fifth capacitor structure 15;
the four capacitors are respectively: a first inductance L1 mainly constituted by the first inductance structure 21, a second inductance L2 mainly constituted by the second inductance structure 22, a third inductance L3 mainly constituted by the third inductance structure 23, and a fourth inductance L4 mainly constituted by the fourth inductance structure 24;
in the circuit: the first capacitor C1 is used as an input capacitor with low frequency; the third capacitor C3 is used as an output capacitor with low frequency; the first inductor L1 and the fourth capacitor C4 form a transmission pole; the third inductor L3 and the fifth capacitor C5 form the other transmission pole of the low pass band; the low-pass band filtering structure (namely, a low-frequency pass band filter) of the duplexer adopts a 2-order design, and 2 transmission zero points are formed outside a band, so that the requirement of out-of-band high suppression can be met;
more specifically:
a first capacitive structure 11 for forming a first capacitance C1, comprising: a first capacitor substrate 301 on the fifth circuit layer, a second capacitor substrate 302 on the third circuit layer; the first capacitor substrate 301 and the second capacitor substrate 302 are electrically connected to the common port P2;
a second capacitive structure 12 for forming a second capacitance C2, comprising: a third capacitor substrate 303 on the fourth circuit layer, a fourth capacitor substrate 304 on the third circuit layer;
a third capacitive structure 13 for forming a third capacitance C3, comprising: a fifth capacitive substrate 305 on a fifth circuit layer, a sixth capacitive substrate 306 on a fourth circuit layer, a seventh capacitive substrate 307 on a third circuit layer, an eighth capacitive substrate 308 on a second circuit layer, a ninth capacitive substrate 309 on a first circuit layer; the fifth capacitor substrate 305, the seventh capacitor substrate 307 and the ninth capacitor substrate 309 are electrically connected to the low-frequency output port P6;
a fourth capacitive structure 14 for forming a fourth capacitance C4, comprising: a tenth capacitive substrate 310 on the fifth circuit layer;
fifth capacitive structure 15 for forming a fifth capacitance C5, comprising: an eleventh capacitive substrate 311 on the sixth circuit layer, a twelfth capacitive substrate 312 on the fifth circuit layer, a thirteenth capacitive substrate 313 on the fourth circuit layer, a fourteenth capacitive substrate 314 on the third circuit layer, a fifteenth capacitive substrate 315 on the second circuit layer, and a sixteenth capacitive substrate 316 on the first circuit layer; and the twelfth capacitive substrate 312, the fourteenth capacitive substrate 314, and the sixteenth capacitive substrate 316 are electrically connected to the first ground port P1;
a first inductor structure 21 for forming a first inductor L1, comprising: a first microstrip inductor 401 located on the sixth circuit layer; the first microstrip inductor 401 is U-shaped; one end of the first microstrip inductor 401 is electrically connected to the tenth capacitor substrate 310;
a second inductor structure 22 for forming a second inductor L2, comprising: a first spiral inductor 501 extending from the fifth circuit layer up to the second circuit layer; the first spiral inductor 501 is located at the start end of the fifth circuit layer and is electrically connected to the third ground port P5; the terminal of the first spiral inductor 501 located on the second circuit layer is electrically connected with the other end of the first microstrip inductor 401 and the third capacitor substrate 303 through a first via hole 601;
a third inductor structure 23 for forming a third inductor L3, comprising: a second microstrip inductor 402 located at the third circuit layer; one end of the second microstrip inductor 402 is electrically connected to the fourth capacitor substrate 304; the other end of the second microstrip inductor 402 is electrically connected to the eleventh capacitor substrate 311, the thirteenth capacitor substrate 313 and the fifteenth capacitor substrate 315 through the second via hole 602;
a fourth inductor structure 24 for forming a fourth inductor L4, comprising: a second spiral inductor 502 extending from the fifth circuit layer up to the second circuit layer; the second spiral inductor 502 is located at the beginning of the fifth circuit layer and electrically connected to the third ground port P5; the second spiral inductor 502 is electrically connected to the eighth capacitive substrate 308 at a terminal of the second circuit layer; and the second spiral inductor 502 is located at the terminal of the second circuit layer and electrically connected to the second microstrip inductor 402 and the sixth capacitive substrate 306 through the third via 603.
It should be noted here that the present invention mainly provides a new low-pass band filtering structure for a duplexer, the present invention does not improve the high-pass band filtering structure (i.e., a high-frequency pass band filter) of the duplexer, and a person skilled in the art can determine the high-pass band filtering structure of the duplexer according to needs, so the present invention does not detailed the high-pass band filtering structure (i.e., the high-frequency pass band filter) again.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The low-temperature co-fired ceramic duplexer is characterized in that a ceramic substrate with the dielectric loss less than 0.001 and the dielectric constant of 40 is adopted, a 2-order design is adopted for a low-pass band filtering structure, 2 transmission zeros are formed outside a band, and out-of-band high suppression is achieved.
2. The low-temperature co-fired ceramic duplexer according to claim 1, wherein a first ground port, a common port, a second ground port, a high-frequency band-pass output port, a third ground port and a low-frequency band output port are provided on an outer side wall of the ceramic substrate.
3. The low-temperature co-fired ceramic duplexer according to claim 2, wherein a low-pass band filter structure for separating low-frequency signals is disposed inside the ceramic substrate, such that the low-pass band filter structure is located between the common port and the low-frequency output port.
4. The low temperature co-fired ceramic duplexer of claim 3, wherein the low-passband filter structure comprises:
a first capacitive structure proximate the common port;
a third capacitive structure adjacent the low band output port;
a fourth capacitive structure proximate the second ground port;
a fifth capacitive structure proximate the first ground port;
the first inductance structure is positioned between the fourth capacitance structure and the high-frequency band-pass output port;
a second inductive structure located above the first inductive structure;
a fourth inductive structure proximate the third ground port;
a second capacitive structure located between the first capacitive structure and the fourth inductive structure;
and a third inductive structure located between the third capacitive structure and the fifth capacitive structure.
5. The low temperature co-fired ceramic duplexer of claim 4, wherein the first capacitive structure is made to act as an input capacitance at low frequencies; making the third capacitor structure an output capacitor of low frequency; forming a transmission pole by the first inductance structure and the fourth capacitance structure; and the third inductance structure and the fifth capacitance structure form the other transmission pole of the low pass band.
6. The low-temperature co-fired ceramic duplexer according to claim 5, wherein the high-frequency band-pass output port, the third ground port and the low-frequency band output port are located on the same side of the ceramic substrate, and the third ground port is located between the high-frequency band-pass output port and the low-frequency band output port.
7. The low temperature co-fired ceramic duplexer of claim 6, wherein the first ground port is located opposite the low-band output port and is directly opposite the low-band output port.
8. The low temperature co-fired ceramic duplexer of claim 7, wherein the common port is located opposite the third ground port and is directly opposite the third ground port.
9. The low temperature co-fired ceramic duplexer of claim 8, wherein the second ground port is located opposite the high frequency band-pass output port and is directly opposite the high frequency band-pass output port.
10. The low-temperature co-fired ceramic duplexer according to claim 9, wherein the overall dimensions are 1.6mm x 0.8mm x 0.6 mm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110716570.0A CN113363690A (en) | 2021-06-28 | 2021-06-28 | Miniaturized low-temperature co-fired ceramic duplexer |
| CN2021107165700 | 2021-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114050384A true CN114050384A (en) | 2022-02-15 |
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ID=77536665
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110716570.0A Withdrawn CN113363690A (en) | 2021-06-28 | 2021-06-28 | Miniaturized low-temperature co-fired ceramic duplexer |
| CN202111559009.2A Withdrawn CN114050384A (en) | 2021-06-28 | 2021-12-20 | Low-temperature co-fired ceramic duplexer |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110716570.0A Withdrawn CN113363690A (en) | 2021-06-28 | 2021-06-28 | Miniaturized low-temperature co-fired ceramic duplexer |
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| CN (2) | CN113363690A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662266A (en) * | 2009-07-16 | 2010-03-03 | 上海交通大学 | Micro low-temperature co-fired ceramic duplexer used for GSM/DCS |
| CN103023451A (en) * | 2012-12-29 | 2013-04-03 | 南京理工大学 | Band-pass/band-elimination type miniature low-temperature co-fired ceramic duplexer |
| CN108155883A (en) * | 2018-01-18 | 2018-06-12 | 北京中科飞鸿科技有限公司 | A kind of high frequency band, the high micromation band logical LC wave filters inhibited |
| CN110994087A (en) * | 2019-11-25 | 2020-04-10 | 中国计量大学上虞高等研究院有限公司 | High-low-pass parallel LTCC band elimination filter |
| CN111525904A (en) * | 2020-03-12 | 2020-08-11 | 深圳市麦捷微电子科技股份有限公司 | Laminated high-pass filter |
-
2021
- 2021-06-28 CN CN202110716570.0A patent/CN113363690A/en not_active Withdrawn
- 2021-12-20 CN CN202111559009.2A patent/CN114050384A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662266A (en) * | 2009-07-16 | 2010-03-03 | 上海交通大学 | Micro low-temperature co-fired ceramic duplexer used for GSM/DCS |
| CN103023451A (en) * | 2012-12-29 | 2013-04-03 | 南京理工大学 | Band-pass/band-elimination type miniature low-temperature co-fired ceramic duplexer |
| CN108155883A (en) * | 2018-01-18 | 2018-06-12 | 北京中科飞鸿科技有限公司 | A kind of high frequency band, the high micromation band logical LC wave filters inhibited |
| CN110994087A (en) * | 2019-11-25 | 2020-04-10 | 中国计量大学上虞高等研究院有限公司 | High-low-pass parallel LTCC band elimination filter |
| CN111525904A (en) * | 2020-03-12 | 2020-08-11 | 深圳市麦捷微电子科技股份有限公司 | Laminated high-pass filter |
Non-Patent Citations (1)
| Title |
|---|
| WING-YAN LEUNG等: "Multilayer LTCC bandpass filter design with enhanced stopband characteristics", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
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| CN113363690A (en) | 2021-09-07 |
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Application publication date: 20220215 |