CN114019765B - Common-path phase modulation laser direct writing method and device based on edge light suppression - Google Patents
Common-path phase modulation laser direct writing method and device based on edge light suppression Download PDFInfo
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- CN114019765B CN114019765B CN202111240501.3A CN202111240501A CN114019765B CN 114019765 B CN114019765 B CN 114019765B CN 202111240501 A CN202111240501 A CN 202111240501A CN 114019765 B CN114019765 B CN 114019765B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a dual-beam common-path phase modulation laser direct writing method and device based on edge light inhibition, comprising an excitation light source for initiating photoresist to generate polymerization reaction and an inhibition light source for inhibiting (or interrupting) photoresist polymerization. The two collimated light beams are combined in a mutually perpendicular linear polarization state, and the two combined light beams are subjected to phase modulation through the same Spatial Light Modulator (SLM). Dividing the SLM into two parts, performing aberration correction on the excitation light with corresponding polarization by a first part modulation phase of the SLM, and finally focusing by an objective lens to form a circular solid light spot; the suppressed light perpendicular to the polarization of the excitation light is phase modulated by the second part of the SLM and finally focused by the objective lens to form an annular hollow spot. The circular solid light spot of the excitation light coincides with the center of the annular hollow light spot of the inhibition light. According to the invention, the SLM is subjected to differential multiplexing, and the double light beams of the laser direct writing technology based on edge light inhibition are subjected to light field regulation and control at the same time, so that common-path phase modulation is realized.
Description
Technical Field
The invention relates to the field of ultra-precise optical writing, in particular to a common-path phase modulation laser direct writing method and device based on edge light inhibition.
Background
The laser direct writing technology is a micro-nano processing method for directly generating a needed writing pattern by scanning laser on a substrate with a photosensitive coating, does not need a mask, and has the characteristics of low cost and strong flexibility. With the continued development of nanotechnology, the device structures that are required to be fabricated in various fields are becoming smaller in size. However, any optical system is limited by optical diffraction, and in the laser direct writing system, the resolution is always limited to r=kλ/NA (where k is a constant related to the writing process, λ is a laser wavelength, and NA is a numerical aperture of the writing objective lens), so that there is an urgent need to improve the resolution of the laser direct writing technology.
With the appearance of femtosecond pulse laser, a two-photon absorption nonlinear effect of light and materials is introduced in the direct writing process, so that the processing of a three-dimensional complex micro-nano structure is realized, the transverse direct writing resolution is improved to a sub-hundred nanometer scale, and the axial resolution is greatly improved. In addition, inspired by stimulated radiation loss microscopic imaging technology (STED) in super-resolution microscopic imaging, the laser direct writing technology utilizes double beams to simultaneously act on the photoresist, wherein one beam of converged Gaussian light acts on the photoresist to cause polymerization reaction, and the other Shu Kongxin light is converged on the edge of a solid light spot to generate an edge light inhibition effect (Peripheral Photoinhibition, PPI), so that polymerization reaction of the edge area of the solid light spot is inhibited, only the area, close to zero, of the central area of the hollow light spot is polymerized, and the direct writing resolution is improved to sub 50 nm.
In the existing dual-beam laser direct writing technology based on edge light suppression, the phase of the suppression beam is modulated by a vortex phase plate to be changed into a hollow light spot, and the modulation phase cannot be flexibly regulated and controlled when the light spot modulation is carried out, so that the aberration problem brought by a system cannot be compensated when the light path adjustment is carried out. In order to solve the problem, the method can set the loaded phase of the light field at will, flexibly modulate the light spot shape and compensate the aberration introduced in the light path by introducing the SLM to regulate the light field of the inhibition light. However, this method can only modulate and suppress the phase of the light beam, and cannot guarantee the spot deformation of the excitation light path due to aberration.
Based on the background, the invention carries out the distinguishing multiplexing on the SLM, simultaneously carries out the optical field regulation and control on the double light beams in the laser direct writing technology based on the edge light inhibition, realizes the common-path phase modulation, can simultaneously correct the aberration introduced in the double light beam optical path, increases the stability of the optical path of the system on the basis of ensuring that the double light beams obtain the required modulation light spots, has high utilization rate of the pixels of the SLM, reduces the use of devices and ensures that the system structure is more compact.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a dual-beam common-path phase modulation laser direct writing device based on edge light suppression.
The specific technical scheme of the invention is as follows:
a dual-beam common-path phase modulation laser direct writing device based on edge light inhibition comprises an excitation light path for initiating photo-polymerization reaction of photoresist, an inhibition light path for inhibiting photo-polymerization reaction of photoresist light, a beam combining light path of excitation light and inhibition light,
the excitation light path sequentially passes through a first laser, a first beam shrinking device, a first acousto-optic modulator, a first beam expander, a first reflecting mirror and a first half wave plate;
the suppression light path sequentially passes through a second laser, a second beam contractor, a second acoustic optical modulator, a second beam expander and a second half wave plate;
the beam combining light path sequentially passes through the polarization beam combiner, the third half-wave plate, the second reflecting mirror, the first part of the SLM, the first quarter-wave plate, the third reflecting mirror, the first quarter-wave plate, the second part of the SLM, the fourth reflecting mirror, the first lens, the fifth reflecting mirror, the field lens, the first quarter-wave plate, the objective lens, the precision displacement platform and the photoresist sample;
further comprises: and the computer is respectively connected with the first acousto-optic modulator, the second acousto-optic modulator, the SLM and the precision displacement platform.
Preferably, the first laser may be a continuous light laser for initiating a single photon absorption polymerization reaction of the photoresist, or may be a picosecond or femtosecond pulse laser for initiating a two photon absorption polymerization reaction of the photoresist.
Preferably, the second laser is a continuous light laser.
Preferably, the first laser is the same wavelength as the second laser.
Preferably, the third reflecting mirror is disposed at a front focal plane of the first lens.
Preferably, the first lens is confocal with the field lens.
Preferably, the method comprises the steps of: the field lens is confocal with the objective lens.
A dual-beam common-path phase modulation laser direct writing method based on edge light inhibition,
the method comprises the following steps:
(1) After laser emitted by a first laser is used as excitation light and passes through a first beam shrinking device, the diameter of a light spot is reduced to a first acousto-optic modulator which can be arranged behind the light spot, then the light spot passes through the first acousto-optic modulator to modulate the switch and the intensity of the light spot, then the light beam is collimated and expanded through a first beam expander, the size of the light spot after the beam expansion is ensured to be close to half of the size of a working surface of the light spot when the light enters a SLM which is installed subsequently, then the light spot passes through a first reflector to turn, and then the linear polarization direction of the light spot is adjusted through a first half-wave plate;
(2) After laser emitted by the second laser is taken as inhibition light and passes through the second beam expander, the diameter of a light spot is reduced to a second light modulator which can be installed at the back, then the second light modulator is used for modulating the switch and the intensity of the light beam, then the second beam expander is used for collimating and expanding the light beam, the size of the light spot after beam expansion is ensured to be close to half of the size of a working surface of the SLM when entering the SLM which is installed at the back, and then the linear polarization direction of the light beam is adjusted through the second half-wave plate;
(3) The excitation light and the inhibition light are combined through a polarization beam combiner, and then the linear polarization directions of the excitation light and the inhibition light are simultaneously adjusted through a third half-wave plate, so that the polarization direction of the excitation light is consistent with the working polarization direction corresponding to the SLM;
(4) The combined light enters a first part of an SLM (selective laser beam) divided into two parts after being reflected by a second reflecting mirror, and a gray level image corresponding to aberration generated by an excitation light path is loaded on the first part of the SLM to enable the excitation light beam to generate corresponding phase modulation; the suppressing light incident to the first part of the SLM simultaneously with the excitation light is polarized perpendicularly thereto, so that no phase modulation occurs when the suppressing light beam passes through said first part of the SLM; the modulated excitation light and the unmodulated inhibition light pass through a first quarter wave plate at the same time, then pass through the first quarter wave plate again after being reflected by a third reflecting mirror, so that the linear polarization directions of the excitation light and the inhibition light are respectively changed by 90 degrees, and then enter the second part of the SLM; loading and generating a gray image corresponding to a hollow light spot on a second part of the SLM, wherein only the suppressed light with the same working polarization direction as the SLM can be subjected to light field regulation by the SLM, so that the suppressed light carries a corresponding phase; the excitation light which is incident to the second part of the SLM together with the inhibition light does not generate phase modulation because the polarization direction of the excitation light is perpendicular to the working polarization direction of the SLM;
(5) The excitation light and the inhibition light beam modulated by the SLM phase are reflected by a fourth reflector, then are converged by a first lens, then are reflected by a fifth reflector and are incident on a field lens, the collimated excitation light and the inhibition light emitted by the field lens pass through a second quarter wave plate, the second quarter wave plate is regulated to respectively convert the excitation light and the inhibition light into left circularly polarized light and right circularly polarized light, and then are converged by an objective lens, so that the excitation light is focused on a sample surface to form a circular solid light spot; the suppressing light is focused onto the sample surface to form an annular hollow spot.
Preferably, the third mirror is imaged to the entrance pupil plane of the objective lens via the first lens and the field lens.
Preferably, the computer is connected with the first acousto-optic modulator, the second acousto-optic modulator, the SLM and the precision displacement platform to output control signals to adjust the first acousto-optic modulator and the second acousto-optic modulator, so that the light intensity and the switch of excitation light and inhibition light are adjusted, and the writing process of the micro-nano structure is controlled; the computer outputs gray image signals to two partitions of the SLM respectively, and adjusts the light field phases of excitation light and inhibition light; the computer outputs a control signal to the precision displacement platform to control the two-dimensional or three-dimensional movement of the precision displacement platform of the sample. Compared with the prior art, the invention has the following beneficial technical effects:
(1) By carrying out division multiplexing on the SLM, and simultaneously carrying out light field regulation and control on double light beams of the laser direct writing technology based on edge light inhibition, aberration introduced in an excitation light path can be corrected while inhibiting light from becoming a hollow light spot, and better direct writing effect of laser direct writing is ensured;
(2) The SLM is distinguished and multiplexed, so that common-path phase modulation is realized between excitation light and inhibition light, the system has higher stability, the utilization rate of SLM pixels is increased, the use of devices is reduced, and the system structure is more compact.
Drawings
FIG. 1 is a schematic diagram of a dual-beam common-path phase modulation laser direct writing device based on edge light suppression;
FIG. 2 is a schematic diagram of polarization of excitation light and suppressed light in an SLM module of the present invention;
FIG. 3 (a) is a schematic diagram of a gray scale image of a circular solid spot formed by modulating excitation light on a first portion of an SLM according to the present invention;
FIG. 3 (b) is a schematic diagram of a gray scale image of the present invention loaded onto a second portion of an SLM modulating the suppression light to form a ring-shaped hollow spot;
FIG. 4 (a) is a graph of a circular solid spot formed on a sample surface by excitation light according to the present invention;
FIG. 4 (b) is a graph of the annular hollow spot of light of the present invention suppressing light formation on the sample face.
Detailed Description
The present invention will be described in detail with reference to examples and drawings, but the present invention is not limited thereto.
As shown in fig. 1, the dual-beam common-path phase modulation laser direct writing device based on edge light suppression of the present invention includes:
an excitation light path for initiating the photo-polymerization reaction of the photoresist; an inhibition optical path for inhibiting photopolymerization of the photoresist; a beam combining optical path of the excitation light and the inhibition light;
the excitation light path sequentially passes through a first laser 1, a first beam shrinking device 2, a first acousto-optic modulator 3, a first beam expander 4, a first reflecting mirror 5 and a first half wave plate 6;
the suppression light path sequentially passes through a second laser 7, a second beam contractor 8, a second acoustic light modulator 9, a second beam expander 10 and a second half wave plate 11;
the combined light path sequentially passes through the polarization beam combiner 12, the third half-wave plate 13, the second reflecting mirror 14, the first part of the SLM15, the first quarter-wave plate 16, the third reflecting mirror 17, the first quarter-wave plate 16, the second part of the SLM15, the fourth reflecting mirror 18, the first lens 19, the fifth reflecting mirror 20, the field lens 21, the first quarter-wave plate 22, the objective lens 23, the precision displacement platform 24 and the photoresist sample 25;
further comprises: a computer 26, the computer 26 is connected with the first acousto-optic modulator 3, the second acousto-optic modulator 9, the SLM15 and the precision displacement platform 24 respectively.
The working process of the dual-beam common-path phase modulation laser direct writing device based on edge light suppression in the embodiment is as follows:
(1) After laser emitted by the first laser 1 is used as excitation light and passes through the first beam contractor 2, the diameter of a light spot is reduced to a first acousto-optic modulator 3 which can be placed behind the light spot, then the light spot passes through the first acousto-optic modulator 3 to modulate the switch and the intensity of the light beam, then the light beam is collimated and expanded by the first beam expander 4, the size of the light spot after the beam expansion is ensured to be close to half of the size of a working surface of the SLM15 when the light enters the SLM15 which is installed later, then the light spot passes through the first reflector 5 to turn, and then the linear polarization direction of the light spot is adjusted by the first half wave plate 6;
(2) After the laser emitted by the second laser 7 is taken as the inhibition light and passes through the second beam expander 8, the diameter of a light spot is reduced to a second light modulator 9 which can be placed behind the inhibition light, then the second light modulator 9 modulates the switch and the intensity of the second light modulator, then the second beam expander 10 collimates and expands the light beam, the size of the light spot after the beam expansion is ensured to be close to half of the size of a working surface of the SLM15 when the light enters the SLM15 which is installed later, and then the linear polarization direction of the SLM is adjusted through the second half-wave plate 11;
(3) The excitation light and the inhibition light are combined through the polarization beam combiner 12, and then the linear polarization directions of the excitation light and the inhibition light are simultaneously adjusted through the third half-wave plate 13, so that the polarization direction of the excitation light is consistent with the corresponding working polarization direction of the SLM 15;
(4) The combined beam is reflected by the second reflecting mirror 14 and enters into the first part of the SLM15 (shown in figure 2), and a gray scale image corresponding to the aberration generated by the exciting light path is loaded on the first part of the SLM15, so that the exciting light beam generates corresponding phase modulation as shown in figure 3 (a); the suppression light incident on the first portion of the SLM15 at the same time as the excitation light is polarized perpendicular thereto (as shown in fig. 2), so that the suppression light beam does not produce phase modulation when passing through the first portion of the SLM 15; the modulated excitation light and the unmodulated inhibition light pass through the first quarter wave plate 16 at the same time, then pass through the first quarter wave plate 16 again after being reflected by the third reflector 17, so that the linear polarization directions of the excitation light and the inhibition light are respectively changed by 90 degrees, and then enter the second part of the SLM 15; the second part of the SLM15 is loaded with a gray image corresponding to the hollow light spot, as shown in fig. 3 (b), only the suppressed light with the same working polarization direction as the SLM15 can be subjected to light field regulation by the SLM15, so that the suppressed light carries a corresponding phase; the excitation light incident on the second portion of SLM15 along with the suppression light does not produce phase modulation because its polarization direction is perpendicular to the operating polarization direction of SLM15 (as shown in fig. 2);
(5) The excitation light and the inhibition light beam modulated by the phase of the SLM15 are reflected by the fourth reflecting mirror 18, then are converged by the first lens 19, then are reflected by the fifth reflecting mirror 20 and are incident on the field lens 21, the collimated excitation light and the inhibition light emitted by the field lens 21 pass through the second quarter wave plate 22, the second quarter wave plate 22 is regulated to respectively convert the excitation light and the inhibition light into left-handed circularly polarized light and right-handed circularly polarized light, and then are converged by the objective lens 23, so that the excitation light is focused on the surface of the photoresist sample 25 to form a circular solid light spot, as shown in fig. 4 (a); focusing the suppression light onto the photoresist sample 25 face to form an annular hollow spot, as shown in fig. 4 (b);
(6) The computer 26 outputs control signals to adjust the first acoustic optical modulator 3 and the second acoustic optical modulator 9, so as to adjust the light intensity and the switch of the excitation light and the inhibition light, and further control the writing process of the micro-nano structure; simultaneously, the computer 26 outputs gray image signals to two partitions of the SLM15, respectively, and adjusts the light field phases of the excitation light and the suppression light; in addition, the computer outputs control signals to the precision displacement platform 24 to control the two-dimensional or three-dimensional movement of the sample platform, so as to realize the processing of the micro-nano structure.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (9)
1. The device adopted by the method comprises an excitation light path for initiating photo-polymerization reaction of photoresist, a suppression light path for suppressing photo-polymerization reaction of photoresist light, and a combined light path of excitation light and suppression light, and is characterized in that:
the excitation light path sequentially passes through a first laser (1), a first beam shrinking device (2), a first acousto-optic modulator (3), a first beam expander (4), a first reflecting mirror (5) and a first half wave plate (6);
the suppression light path sequentially passes through a second laser (7), a second beam contractor (8), a second optical modulator (9), a second beam expander (10) and a second half wave plate (11);
the beam combining light path sequentially passes through a polarization beam combiner (12), a third half-wave plate (13), a second reflecting mirror (14), a first part of an SLM (15), a first quarter-wave plate (16), a third reflecting mirror (17), a first quarter-wave plate (16), a second part of the SLM (15), a fourth reflecting mirror (18), a first lens (19), a fifth reflecting mirror (20), a field lens (21), a first half-wave plate (22), an objective lens (23), a precision displacement platform (24) and a photoresist sample (25);
further comprises: a computer (26), wherein the computer (26) is respectively connected with the first acoustic optical modulator (3), the second acoustic optical modulator (9), the SLM (15) and the precision displacement platform (24);
the method comprises the following steps:
the method comprises the steps of (1) reducing the diameter of a light spot of laser emitted by a first laser (1) as excitation light to a first acousto-optic modulator (3) which can be placed behind the light spot after the laser passes through a first beam shrinking device (2), modulating the switch and the intensity of the laser through the first acousto-optic modulator (3), collimating and expanding the light beam through a first beam expander (4), ensuring that the size of the light spot after the beam expansion is close to half of the size of a working surface of the SLM (15) when the light enters a later installed SLM, turning the light path through a first reflecting mirror (5), and adjusting the linear polarization direction of the light beam through a first half wave plate (6);
(2) After the laser emitted by the second laser (7) is taken as inhibition light and passes through the second beam expander (8), the diameter of a light spot is reduced to a second light modulator (9) which can be installed at the back, the second light modulator (9) is used for modulating the switch and the intensity of the light beam, the second beam expander (10) is used for collimating and expanding the light beam, the size of the light spot after the beam expansion is ensured to be close to half of the size of a working surface of the SLM (15) installed at the back when the light enters the SLM, and then the linear polarization direction of the light beam is adjusted through the second half wave plate (11);
(3) The excitation light and the inhibition light are combined through a polarization beam combiner (12), and then the linear polarization directions of the excitation light and the inhibition light are simultaneously adjusted through a third half-wave plate (13), so that the polarization direction of the excitation light is consistent with the working polarization direction corresponding to the SLM;
(4) The combined light enters a first part of an SLM (15) divided into two parts after being reflected by a second reflecting mirror (14), and a gray level image corresponding to aberration generated by an excitation light path is loaded on the first part of the SLM (15) to enable the excitation light beam to generate corresponding phase modulation; the suppression light incident on the first part of the SLM (15) simultaneously with the excitation light is polarized perpendicularly thereto, so that no phase modulation occurs when the suppression light beam passes through said first part of the SLM; the modulated excitation light and the unmodulated inhibition light pass through a first quarter wave plate (16) at the same time, then are reflected by a third reflector (17) and pass through the first quarter wave plate (16) again, so that the linear polarization directions of the excitation light and the inhibition light are respectively changed by 90 degrees, and then enter a second part of the SLM (15); loading a gray image corresponding to a hollow light spot on a second part of the SLM (15), wherein only the suppressed light with the same working polarization direction as the SLM can be subjected to light field regulation by the SLM (15) so that the suppressed light carries a corresponding phase; the excitation light incident to the second part of the SLM (15) together with the suppressing light does not generate phase modulation since its polarization direction is perpendicular to the working polarization direction of the SLM;
(5) The excitation light and the inhibition light beams which are subjected to phase modulation by the SLM (15) are reflected by a fourth reflecting mirror (18), then are converged by a first lens (19), then are reflected by a fifth reflecting mirror (20) and are incident on a field lens (21), the collimation excitation light and the inhibition light which are emitted by the field lens (21) pass through a second quarter wave plate (22), the second quarter wave plate (22) is regulated to enable the excitation light and the inhibition light to be respectively changed into left circularly polarized light and right circularly polarized light, and then are converged by an objective lens (23), so that the excitation light is focused on a sample surface to form a round solid light spot; the suppression light is focused onto the face of the sample (25) to form an annular hollow spot.
2. The dual-beam common-path phase modulation laser direct writing method based on edge light suppression as claimed in claim 1, wherein: the first laser (1) is a continuous light laser used for initiating single photon absorption polymerization reaction of the photoresist, or is a picosecond or femtosecond pulse laser used for initiating two photon absorption polymerization reaction of the photoresist.
3. The dual-beam common-path phase modulation laser direct writing method based on edge light suppression as claimed in claim 1, wherein: the second laser (7) is a continuous light laser or a pulsed laser.
4. The dual-beam common-path phase modulation laser direct writing method based on edge light suppression as claimed in claim 1, wherein: the first laser (1) and the second laser (7) have the same wavelength.
5. The dual-beam common-path phase modulation laser direct writing method based on edge light suppression as claimed in claim 1, wherein: the third mirror (17) is placed at the front focal plane of the first lens (19).
6. The dual-beam common-path phase modulation laser direct writing method based on edge light suppression as claimed in claim 1, wherein: the first lens (19) is confocal with the field lens (21).
7. The dual-beam common-path phase modulation laser direct writing method based on edge light suppression as claimed in claim 1, wherein: the field lens (21) is confocal with the objective lens (23).
8. The dual-beam common-path phase modulation laser direct writing method based on edge light suppression as claimed in claim 1, wherein: the third mirror (17) images via the first lens (19) and the field lens (21) onto the entrance pupil plane of the objective lens (23).
9. The dual-beam common-path phase modulation laser direct writing method based on edge light suppression as claimed in claim 1, wherein: the computer (26) is connected with the first acousto-optic modulator (3), the second acousto-optic modulator (9), the SLM (15) and the precision displacement platform (24), and the computer (26) outputs control signals to adjust the first acousto-optic modulator (3) and the second acousto-optic modulator (9), so that the light intensity and the switch of excitation light and inhibition light are adjusted, and the writing process of the micro-nano structure is controlled; the computer (26) outputs gray image signals to two subareas of the SLM (15) respectively, and adjusts the light field phases of the excitation light and the inhibition light; the computer (26) outputs control signals to the precision displacement platform (24) to control the two-dimensional or three-dimensional movement of the precision displacement platform (24) of the sample.
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| US9632297B1 (en) * | 2015-11-04 | 2017-04-25 | Abberior Instruments Gmbh | Device for separately modulating the wave fronts of two components of a light beam and microscope comprising the device |
| CN109358030A (en) * | 2018-11-26 | 2019-02-19 | 浙江大学 | It is a kind of with the polychrome super-resolution microscopic system for being automatically aligned to function |
| CN113515017A (en) * | 2021-04-12 | 2021-10-19 | 之江实验室 | Double-beam high-speed laser direct writing method and device based on AOD scanning |
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