CN114019764B - Super-resolution laser direct writing and imaging method and device - Google Patents
Super-resolution laser direct writing and imaging method and device Download PDFInfo
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- CN114019764B CN114019764B CN202111240495.1A CN202111240495A CN114019764B CN 114019764 B CN114019764 B CN 114019764B CN 202111240495 A CN202111240495 A CN 202111240495A CN 114019764 B CN114019764 B CN 114019764B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 95
- 230000005284 excitation Effects 0.000 claims abstract description 49
- 239000007850 fluorescent dye Substances 0.000 claims abstract description 25
- 239000007787 solid Substances 0.000 claims abstract description 22
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 19
- 230000005764 inhibitory process Effects 0.000 claims abstract description 16
- 230000000977 initiatory effect Effects 0.000 claims abstract description 9
- 230000005855 radiation Effects 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 210000001747 pupil Anatomy 0.000 claims description 9
- 230000001629 suppression Effects 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 6
- 239000000975 dye Substances 0.000 claims description 6
- 230000010287 polarization Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 230000005283 ground state Effects 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 abstract 1
- 238000012634 optical imaging Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- Optics & Photonics (AREA)
- Microscoopes, Condenser (AREA)
Abstract
The invention discloses a super-resolution laser direct writing and imaging method and device, the device comprises three light sources which are respectively excitation light sources for initiating photoresist to generate polymerization reaction, excitation light for exciting fluorescent dye molecules in the photoresist to emit light from a ground state to an excitation state, an inhibition light source or a depletion light source for inhibiting the photoresist from polymerization and simultaneously enabling the fluorescent dye molecules to generate stimulated radiation, and the inhibition light and the depletion light are the same light source. The excitation light for initiating the polymerization of the photoresist is collimated and finally converged into a round solid light spot on the sample surface through the objective lens; after collimation, the suppressed light modulates the phase through a phase mask, and finally, the suppressed light is converged on a sample surface by an objective lens to form an annular hollow light spot; the excitation light of fluorescent dye in the photoresist is collimated and finally converged on the sample surface through the objective lens to form a round solid light spot. The invention can realize direct optical imaging after the writing of the nano structure is completed, does not need to carry out electron microscope imaging, and ensures that the operation is simpler.
Description
Technical Field
The invention relates to the field of ultra-precise optical inscription and super-resolution microscopic imaging, in particular to a super-resolution laser direct-writing and imaging method and device.
Background
The laser direct writing technology is a maskless photoetching technology for realizing direct writing by utilizing laser, and the maskless photoetching technology directly generates a required structure by scanning a substrate with a photosensitive image layer through a laser beam, does not need to prepare a mask plate, can omit the processes of pattern transfer, overlay and the like, and has the characteristics of strong flexibility, low cost and the like. In recent years, with the application of femtosecond pulse laser, the direct writing precision can be greatly improved to hundred nanometers by utilizing the nonlinear effect of two-photon absorption of the femtosecond pulse laser and a material and the threshold effect. The two-photon laser direct writing technology has intrinsic true three-dimensional writing capability and is suitable for processing various materials. However, the current single-beam laser direct writing technology is still limited by diffraction limit, and the processing precision is still low. In order to further improve the direct writing resolution, a method similar to STED super-resolution microscopic imaging is proposed, and super-resolution laser direct writing is realized by adopting double light beams, namely, a hollow inhibition light spot is sleeved on the periphery of a solid excitation light spot, so that the direct writing resolution is improved to sub 50 nm.
In order to characterize the etching result of laser direct writing, an electron microscope is generally adopted for observation, and before observation, a metal spraying operation is required. In addition, the electron microscope has the advantages of slower imaging speed, high cost and complex operation. In the invention, an optical super-resolution method is adopted to image and characterize the inscribed structure instead of an electron microscope. By adding fluorescent dye with specific excitation wavelength and inhibition wavelength on the photoresist, laser direct writing can be realized, and imaging can be performed through an imaging light path. In the device, the modulated hollow light path is subjected to multiplexing of direct writing and imaging, so that the device can realize the inhibition effect of photoresist during writing, thereby improving the writing resolution and realizing super-resolution direct writing; stimulated radiation loss is realized when imaging is carried out, so that imaging resolution is improved, and super-resolution imaging is realized.
The invention integrates the inscription and imaging characterization into a system, and images by an optical method, thereby having the advantages of high imaging speed, simple and convenient operation, low cost and the like; multiplexing is performed in the writing and imaging through a hollow light path, so that the utilization rate of a system module is improved, and the system is more compact.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a super-resolution laser direct writing and imaging device.
The specific technical scheme of the invention is as follows:
a super-resolution laser direct writing and imaging device comprises a photoresist excitation light path for initiating photoresist to generate photopolymerization reaction; a photoresist suppressing light path for suppressing photopolymerization of the photoresist; a fluorescence excitation light path for generating autoradiated fluorescence from the fluorescence; a fluorescence loss optical path for generating stimulated radiation by fluorescence, the fluorescence loss optical path being the same optical path as a photoresist suppressing optical path for suppressing a photoresist reaction; a combined beam light path of the photoresist excitation light path, the photoresist suppression light path and the fluorescence excitation light path; and a super-resolution imaging detection light path;
the photoresist excitation light path sequentially passes through a first laser, a first acousto-optic modulator, a first beam expander, a first quarter wave plate and a first dichroic mirror;
the photoresist suppression light path and the fluorescence loss light path sequentially pass through a second laser, a second acoustic light modulator, a second beam expander, a phase mask device, a second quarter wave plate and a second dichroic mirror;
the fluorescence excitation light path sequentially passes through a third laser, a third acousto-optic modulator, a third beam expander, a third quarter wave plate and a third dichroic mirror;
the beam combining light path sequentially passes through a scanning galvanometer, a scanning lens, a first reflecting mirror, a field lens, an objective lens, a high-precision movable sample stage and a photoresist sample;
the imaging detection light path sequentially passes through an objective lens, a field lens, a first reflecting mirror, a scanning lens, a scanning galvanometer, a third dichroic mirror, a second dichroic mirror, a first dichroic mirror, a second reflecting mirror, a converging lens, a pinhole and a photon detector;
the system also comprises a computer, wherein the computer is connected with the first acousto-optic modulator, the second acousto-optic modulator, the third acousto-optic modulator, the scanning galvanometer, the high-precision moving sample stage and the photon detector.
Preferably, the first laser may be a continuous light laser for initiating a single photon absorption polymerization reaction of the photoresist, or may be a picosecond or femtosecond pulse laser for initiating a two photon absorption polymerization reaction of the photoresist.
Preferably, the second laser is a continuous light laser or a pulsed laser.
Preferably, the third laser is a pulse laser.
Preferably, the scanning lens is confocal with the field lens.
Preferably, the field lens is confocal with the objective lens.
A super-resolution laser direct writing and imaging method by using the super-resolution laser direct writing and imaging device comprises the following steps:
(1) The laser emitted by the first laser is used as excitation light of photoresist polymerization reaction, the excitation light is modulated on and off and intensity through a first acousto-optic modulator, then the light beam is collimated and expanded through a first beam expander, the light spot size after beam expansion is ensured to be full of the aperture of an entrance pupil of an objective lens which is arranged subsequently, linear polarization is modulated into circularly polarized light through a first quarter wave plate, and then the circularly polarized light is reflected through a first dichroic mirror, and the second dichroic mirror and a third dichroic mirror are transmitted;
(2) The laser emitted by the second laser is used as photoresist polymerization inhibition light and loss light of fluorescent dye in photoresist, the inhibition light or the loss light modulates the switch and the intensity of the laser through the second optical modulator, then the laser is collimated and expanded through the second beam expander, the light spot size after the beam expansion ensures that the aperture of an objective lens entrance pupil installed subsequently can be filled, then the laser enters a phase mask device for phase modulation, and the laser is polarized through a second quarter wave plate for changing the laser into circular polarized light, then the circular polarized light is reflected through the second dichroic mirror, and then the circular polarized light is transmitted through a third dichroic mirror;
(3) The laser emitted by the third laser is used as excitation light of fluorescent dye in the photoresist sample, the excitation light is modulated on and off and intensity by a third acousto-optic modulator, then the light beam is collimated and expanded by a third beam expander, the light spot size after beam expansion is ensured to be full of the aperture of an entrance pupil of an objective lens which is arranged subsequently, and then linear polarization is modulated into circularly polarized light by a third quarter wave plate and then reflected by a third dichroic mirror;
(4) The method comprises the steps that a photoresist excitation light path, a photoresist suppression (or fluorescence loss) light path and a fluorescence excitation light path are combined together to enter a scanning vibrating mirror, then the scanning vibrating mirror is converged through a scanning lens, a first reflecting mirror is reflected to the front focal surface of a subsequent field lens, then the scanning vibrating mirror is collimated through the field lens, finally the scanning vibrating mirror is converged to a photoresist sample surface placed on a high-precision movable sample stage through an objective lens, photoresist sample excitation light is converged to form a circular solid light spot, photoresist suppression light (or fluorescence dye loss light) is converged to form a circular hollow light spot, fluorescence dye excitation light is converged to form a circular solid light spot, and the centers of the three light spots are overlapped on the photoresist sample on the front focal surface of the objective lens;
(5) In the process of performing super-resolution laser direct writing, the photoresist excites the circular solid light spot to enable the photoresist sample to generate photopolymerization reaction, the photoresist inhibits the annular hollow light spot from inhibiting the polymerization reaction of the photoresist at the periphery of the solid light spot of the photoresist sample, and only the extremely small area, which is near zero, of the center light intensity of the hollow light spot is left to generate polymerization, so that super-resolution laser direct writing is realized;
(6) In the super-resolution microscopic imaging process, fluorescent dye excites a circular solid light spot to enable dye in a photoresist sample to generate spontaneous emission fluorescence, and fluorescent dye loss light hollow light spots enable dye in the photoresist sample to generate stimulated radiation on the periphery of the circular solid light, so that only fluorescence with central light intensity of zero and residual spontaneous emission is enabled, and super-resolution imaging is achieved;
(7) Fluorescence is collected through an objective lens, then relayed through a field lens and a scanning lens, enters a scanning galvanometer, then sequentially passes through a third dichroic mirror, a second dichroic mirror and a first dichroic mirror for transmission, then is reflected by the second reflecting mirror, enters a converging lens for converging on a pinhole position for subsequent installation, and finally is received through a photon detector;
(8) The computer outputs control signals to the first acousto-optic modulator, the second acousto-optic modulator and the third acousto-optic modulator to regulate and control the light opening and the light intensity of the control light, and simultaneously outputs control signals to the scanning galvanometer to scan the light beam, further controls the two-dimensional or three-dimensional movement of the high-precision moving sample stage, and controls the signal reading, processing and storage of the photon detector.
Preferably, the phase mask device is a vortex phase plate or a spatial light modulator;
preferably, the first dichroic mirror is of a long-pass type, the second dichroic mirror is of a short-pass type, and the third dichroic mirror is of a short-pass type.
Compared with the prior art, the invention has the following beneficial technical effects:
(1) The writing and imaging characterization are integrated into a system, and imaging is performed by an optical method, so that the method has the advantages of high imaging speed, simplicity and convenience in operation, low cost and the like;
(2) Multiplexing is performed in the writing and imaging through a hollow light path, so that the utilization rate of a system module is improved, and the system is more compact.
Drawings
FIG. 1 is a schematic diagram of a super-resolution laser direct writing and imaging device according to the present invention.
FIG. 2 (a) is a graph of a circular solid spot formed on a sample surface by excitation light according to the present invention;
FIG. 2 (b) is a graph of the annular hollow spot of light of the present invention suppressing light formation on the sample face.
Detailed Description
The present invention will be described in detail with reference to examples and drawings, but the present invention is not limited thereto.
As shown in fig. 1, the super-resolution laser direct writing and imaging device of the present invention includes:
a photoresist excitation light path for initiating a photopolymerization reaction of the photoresist; a photoresist suppressing light path for suppressing photopolymerization of the photoresist; a fluorescence excitation light path for generating autoradiated fluorescence from the fluorescence; a fluorescence loss optical path for generating stimulated radiation by fluorescence, the fluorescence loss optical path being the same optical path as a photoresist suppressing optical path for suppressing a photoresist reaction; a photoresist excitation light path, a photoresist suppression light path and a beam combination light path of the fluorescent dye excitation light path; and a super-resolution imaging detection light path;
the photoresist excitation light path sequentially passes through a first femtosecond laser 1 with 780-nm wavelengths or 532-nm wavelengths, a first acousto-optic modulator 2, a first beam expander 3, a first quarter wave plate 4 and a first dichroic mirror 5;
the photoresist suppression light path and the fluorescence loss light path sequentially pass through a 532 nm-wavelength continuous light second laser 6, a second acoustic modulator 7, a second beam expander 8, a phase mask device 9, a second quarter wave plate 10 and a second dichroic mirror 11;
the fluorescence excitation light path sequentially passes through a picosecond pulse third laser 12, a third acousto-optic modulator 13, a third beam expander 14, a third quarter wave plate 15 and a third dichroic mirror 16 with 445 and nm wavelengths;
the beam combining light path sequentially passes through a scanning galvanometer 17, a scanning lens 18, a first reflecting mirror 19, a field lens 20, an objective lens 21, a high-precision moving sample stage 22 and a photoresist sample 23 with fluorescent dye;
the super-resolution imaging detection light path sequentially passes through an objective lens 21, a field lens 20, a first reflecting mirror 19, a scanning lens 18, a scanning galvanometer 17, a third dichroic mirror 16, a second dichroic mirror 11, a first dichroic mirror 5, a second reflecting mirror 24, a converging lens 25, a pinhole 26 and a photon detector 27;
a computer 28 is also included, the computer 28 being connected to the first acousto-optic modulator 2, the second acousto-optic modulator 7, the third acousto-optic modulator 13, the scanning galvanometer 17, the high precision moving sample stage 22 and the photon detector 27.
The working process of the super-resolution laser direct writing and imaging device in this embodiment is as follows:
(1) The laser emitted by the first femtosecond laser 1 is used as excitation light of photoresist polymerization reaction, the excitation light is subjected to switch and intensity modulation through the first acousto-optic modulator 2, then the light beam is subjected to collimation and beam expansion through the first beam expander 3, the light spot size after beam expansion is ensured to be full of the aperture of the entrance pupil of an objective lens 21 which is arranged subsequently, linear polarization is modulated into circularly polarized light through the first quarter wave plate 4, and then the circularly polarized light is reflected through the first dichroic mirror 5, and the second dichroic mirror 11 and the third dichroic mirror 16 are transmitted;
(2) The laser emitted by the continuous light second laser 6 is used as photoresist polymerization reaction inhibition light and loss light of fluorescent dye in photoresist, the inhibition light or the loss light modulates the switch and the intensity of the inhibition light through the second optical modulator 7, then the second optical expander 8 collimates and expands the light beam, the light spot size after expanding the light beam ensures that the aperture of an entrance pupil of an objective lens 21 which is arranged subsequently can be filled, then the light spot size enters a vortex phase plate 9 for phase modulation, and the light spot is polarized through a second quarter wave plate 10 to be changed into circular polarized light, reflected through a second dichroic mirror 11 and transmitted through a third dichroic mirror 16;
(3) The laser emitted by the picosecond pulse third laser 12 is used as excitation light of fluorescent dye in the photoresist sample 23, the excitation light is modulated in switch and intensity through the third acousto-optic modulator 13, then the light beam is collimated and expanded through the third beam expander 14, the light spot size after the beam expansion ensures that the aperture of the entrance pupil of the objective lens 21 which is installed subsequently can be filled, and then linear polarization is modulated into circularly polarized light through the third quarter wave plate 15, and then the circularly polarized light is reflected through the third dichroic mirror 16;
(4) The photoresist excitation light path, the photoresist inhibition (or fluorescence loss) light path and the fluorescence excitation light path are combined together to enter a scanning vibrating mirror 17, then are converged by a scanning lens 18, reflected by a first reflecting mirror 19 to the front focal plane of a subsequent field lens 20, collimated by the field lens 20, and finally converged by an objective lens 21 to a photoresist sample 23 surface placed on a high-precision movable sample stage 22, wherein the photoresist sample 23 excitation light is converged to form a circular solid light spot (shown in fig. 2 (a), the photoresist inhibition light (or fluorescence dye loss light) is converged to form an annular hollow light spot (shown in fig. 2 (b)), the fluorescence dye excitation light is converged to form a circular solid light spot (shown in fig. 2 (a)), and the centers of the three light spots are overlapped on the photoresist sample 23 on the front focal plane of the objective lens 21;
(5) In the process of performing super-resolution laser direct writing, the photoresist excites the circular solid light spot to enable the photoresist sample 23 to generate photopolymerization reaction, the photoresist inhibits the annular hollow light spot from inhibiting the polymerization reaction of the photoresist at the periphery of the solid light spot of the photoresist sample 23, and only the extremely small area, which is near zero, of the center light intensity of the hollow light spot is left to generate polymerization, so that super-resolution laser direct writing is realized;
(6) In the super-resolution microscopic imaging process, the fluorescent dye excites a circular solid light spot to enable dye in the photoresist sample 23 to generate spontaneous emission fluorescence, the fluorescent dye consumes a light hollow light spot to enable dye in the photoresist sample 23 to generate stimulated radiation on the periphery of the circular solid light, and only the central light intensity is enabled to be zero, so that the residual spontaneous emission fluorescence is achieved, and super-resolution imaging is achieved;
(7) Fluorescence is collected through an objective lens 21, relayed through a field lens 20 and a scanning lens 18, enters a scanning galvanometer 17, is transmitted through a third dichroic mirror 16, a second dichroic mirror 11 and a first dichroic mirror 5 in sequence, is reflected through a second reflecting mirror 24, enters a converging lens 25 to be converged on a pinhole 26 position of subsequent installation, and is finally received through a photon detector 27;
(8) The computer 28 outputs control signals to the first acousto-optic modulator 2, the second acousto-optic modulator 7 and the third acousto-optic modulator 13 to regulate and control the light opening and the light intensity of the control light, and simultaneously outputs control signals to the scanning galvanometer 17 to scan the light beam, and also controls the two-dimensional or three-dimensional movement of the high-precision moving sample 22, and controls the signal reading, processing and storage of the photon detector 27.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (9)
1. A super-resolution laser direct writing and imaging device comprises a photoresist excitation light path for initiating photoresist to generate photopolymerization reaction; a photoresist suppressing light path for suppressing photopolymerization of the photoresist; a fluorescence excitation light path for generating autoradiated fluorescence from the fluorescence; a fluorescence loss optical path for generating stimulated radiation by fluorescence, the fluorescence loss optical path being the same optical path as a photoresist suppressing optical path for suppressing a photoresist reaction; a combined beam light path of the photoresist excitation light path, the photoresist suppression light path and the fluorescence excitation light path; and a super-resolution imaging detection light path; the method is characterized in that:
the photoresist excitation light path sequentially passes through a first laser (1), a first acousto-optic modulator (2), a first beam expander (3), a first quarter wave plate (4) and a first dichroic mirror (5);
the photoresist suppression light path and the fluorescence loss light path sequentially pass through a second laser (6), a second acoustic light modulator (7), a second beam expander (8), a phase mask device (9), a second quarter wave plate (10) and a second dichroic mirror (11);
the fluorescence excitation light path sequentially passes through a third laser (12), a third acousto-optic modulator (13), a third beam expander (14), a third quarter wave plate (15) and a third dichroic mirror (16);
the beam combining light path sequentially passes through a scanning galvanometer (17), a scanning lens (18), a first reflecting mirror (19), a field lens (20), an objective lens (21), a high-precision movable sample stage (22) and a photoresist sample (23);
the imaging detection light path sequentially passes through an objective lens (21), a field lens (20), a first reflecting mirror (19), a scanning lens (18), a scanning galvanometer (17), a third dichroic mirror (16), a second dichroic mirror (11), a first dichroic mirror (5), a second reflecting mirror (24), a converging lens (25), a pinhole (26) and a photon detector (27);
the device also comprises a computer (28), wherein the computer (28) is connected with the first acoustic optical modulator (2), the second acoustic optical modulator (7), the third acoustic optical modulator (13), the scanning galvanometer (17), the high-precision moving sample stage (22) and the photon detector (27).
2. The super-resolution laser direct writing and imaging apparatus as defined in claim 1, wherein: the first laser (1) can be a continuous light laser for initiating single photon absorption polymerization reaction of photoresist, or can be a picosecond or femtosecond pulse laser for initiating two photon absorption polymerization reaction of photoresist.
3. The super-resolution laser direct writing and imaging apparatus as defined in claim 1, wherein: the second laser (6) is a continuous light laser or a pulsed laser.
4. The super-resolution laser direct writing and imaging apparatus as defined in claim 1, wherein: the third laser (12) is a pulsed laser.
5. The super-resolution laser direct writing and imaging apparatus as defined in claim 1, wherein: the scanning lens (18) is confocal with the field lens (20).
6. The super-resolution laser direct writing and imaging apparatus as defined in claim 1, wherein: the field lens (20) is confocal with the objective lens (21).
7. A method of super-resolution laser direct-write and imaging using the super-resolution laser direct-write and imaging apparatus of any one of claims 1 to 6, comprising the steps of:
the method comprises the steps of (1) taking laser emitted by a first laser (1) as excitation light of photoresist polymerization reaction, modulating the switch and intensity of the excitation light through a first acousto-optic modulator (2), then collimating and expanding the light beam through a first beam expander (3), ensuring that the light spot size after beam expansion can be full of the entrance pupil aperture of an objective lens (21) installed subsequently, modulating linear polarization into circularly polarized light through a first quarter wave plate (4), then reflecting through a first dichroic mirror (5), and transmitting through a second dichroic mirror (11) and a third dichroic mirror (16);
(2) The laser emitted by the second laser (6) is used as photoresist polymerization inhibition light and loss light of fluorescent dye in photoresist, the inhibition light or the loss light modulates the switch and the intensity of the laser through the second optical modulator (7), then the laser beam is collimated and expanded through the second beam expander (8), the light spot size after the beam expansion ensures that the aperture of an entrance pupil of an objective lens (21) which is arranged subsequently can be filled, the laser enters a phase mask device (9) for phase modulation, and the laser is polarized and modulated through a second quarter wave plate (10) to become circularly polarized light, and then the circularly polarized light is reflected through a second dichroic mirror (11) and transmitted through a third dichroic mirror (16);
(3) The laser emitted by the third laser (12) is used as excitation light of fluorescent dye in a photoresist sample (23), the excitation light is modulated in switch and intensity through a third acousto-optic modulator (13), then the light beam is collimated and expanded through a third beam expander (14), the light spot size after beam expansion ensures that the aperture of an entrance pupil of an objective lens (21) which is arranged subsequently can be filled, and linear polarization is modulated into circularly polarized light through a third quarter wave plate (15) and then reflected through a third dichroic mirror (16);
(4) The photoresist excitation light path, the photoresist inhibition or fluorescence loss light path and the fluorescence excitation light path are combined together to enter a scanning vibrating mirror (17), then are converged by a scanning lens (18), reflected by a first reflecting mirror (19) to the front focal surface of a subsequent field lens (20), then are collimated by the field lens (20), finally are converged by an objective lens (21) to the surface of a photoresist sample (23) placed on a high-precision movable sample stage (22), the photoresist sample (23) is converged into a circular solid light spot, the photoresist inhibition light or fluorescence dye loss light is converged into an annular hollow light spot, the fluorescence dye excitation light is converged into a circular solid light spot, and the centers of the three light spots are overlapped on the photoresist sample (23) on the front focal surface of the objective lens (21);
(5) In the process of performing super-resolution laser direct writing, the photoresist excites the circular solid light spot to enable the photoresist sample (23) to generate photopolymerization reaction, and the photoresist suppresses the annular hollow light spot to suppress the polymerization reaction of the photoresist at the periphery of the solid light spot of the photoresist sample (23), so that only the extremely small area, which is near zero, of the center light intensity of the hollow light spot is left to generate polymerization, and the super-resolution laser direct writing is realized;
(6) In the super-resolution microscopic imaging process, fluorescent dye excites a circular solid light spot to enable dye in a photoresist sample (23) to generate autoradiation fluorescence, and a fluorescent dye loss light hollow light spot enables dye in the photoresist sample (23) to generate stimulated radiation at the periphery of the circular solid light, so that only fluorescence with the central light intensity of zero and residual autoradiation is enabled, and super-resolution imaging is realized;
(7) Fluorescence is collected through an objective lens (21), then relayed through a field lens (20) and a scanning lens (18), enters a scanning galvanometer (17), then sequentially passes through a third dichroic mirror (16), a second dichroic mirror (11) and a first dichroic mirror (5) to be transmitted, then is reflected by a second reflecting mirror (24) and enters a converging lens (25) to be converged on a pinhole (26) position arranged subsequently, and finally is received through a photon detector (27);
(8) The computer (28) outputs control signals to the first acousto-optic modulator (2), the second acousto-optic modulator (7) and the third acousto-optic modulator (13) to control the light opening and the light intensity of the control light, and simultaneously outputs control signals to the scanning galvanometer (17) to scan the light beam, further controls the two-dimensional or three-dimensional movement of the high-precision moving sample stage (22), and controls the signal reading, processing and storage of the photon detector (27).
8. The super-resolution laser direct writing and imaging method as defined in claim 7, wherein: the phase mask device (9) is a vortex phase plate or a spatial light modulator.
9. The super-resolution laser direct writing and imaging method as defined in claim 7, wherein: the first dichroic mirror (5) is of a long-pass type, the second dichroic mirror (11) is of a short-pass type, and the third dichroic mirror (16) is of a short-pass type.
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