CN117289563B - Amplitude type calculation hologram realization device and method - Google Patents
Amplitude type calculation hologram realization device and method Download PDFInfo
- Publication number
- CN117289563B CN117289563B CN202311592943.3A CN202311592943A CN117289563B CN 117289563 B CN117289563 B CN 117289563B CN 202311592943 A CN202311592943 A CN 202311592943A CN 117289563 B CN117289563 B CN 117289563B
- Authority
- CN
- China
- Prior art keywords
- light
- modulator
- photoresist
- path
- writing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004364 calculation method Methods 0.000 title claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 38
- 230000005764 inhibitory process Effects 0.000 claims abstract description 32
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 64
- 230000005284 excitation Effects 0.000 claims description 60
- 230000001629 suppression Effects 0.000 claims description 19
- 238000006073 displacement reaction Methods 0.000 claims description 17
- 238000005286 illumination Methods 0.000 claims description 13
- 230000010287 polarization Effects 0.000 claims description 10
- 238000006116 polymerization reaction Methods 0.000 claims description 9
- 230000002401 inhibitory effect Effects 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000000977 initiatory effect Effects 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 7
- 230000004075 alteration Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007850 fluorescent dye Substances 0.000 description 3
- 238000005305 interferometry Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 241000122205 Chamaeleonidae Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Holo Graphy (AREA)
Abstract
The invention discloses an amplitude type calculation hologram realization device and method. The invention uses the super-resolution laser direct writing of edge light inhibition to realize the large-area amplitude type calculation hologram for the adjustment of the extreme ultraviolet lithography objective lens, overcomes the defect of the writing precision of the laser direct writing technology, has higher efficiency compared with the electron beam direct writing, and has the advantages of simple operation, low cost and the like. The compensation module is used for carrying out optical power and phase modulation compensation in real time in the writing process, so that the stability and the writing precision of the writing system in the writing of large-area amplitude type calculated holograms for a long time are ensured.
Description
Technical Field
The invention belongs to the technical field of optical precision manufacturing, and particularly relates to an amplitude type calculation hologram realization device and method.
Background
The extreme ultraviolet lithography objective lens is one of key components of an extreme ultraviolet lithography machine, and the high-precision surface shape adjustment of an optical element in the extreme ultraviolet lithography objective lens is a key problem.
The high-precision zero-position interferometry method based on the calculation hologram is different from the traditional spherical zero-position interferometry principle, and according to the surface gradient distribution of the aspheric surface, a calculation hologram (CGH) is designed as a phase compensation device for compensating the phase deviation of the aspheric surface, so that the high-precision aspheric surface shape detection is realized, and the method is expanded to the adjustment of an optical system. The zero-position interferometry using CGH compensation is the complex surface shape inspection method with highest current precision, and the measurement uncertainty can reach the nanometer level. Besides being applicable to high-precision detection of an aspheric element, the capability of generating wave fronts with any shape by the CGH provides wider application potential for the CGH.
At present, two common methods for manufacturing the calculated holographic microstructure are electron beam direct writing and laser direct writing.
The resolution of the electron beam direct writing method is higher, and structures with line widths of tens of nanometers or even nanometers can be manufactured, but the electron beam direct writing range is smaller and the processing efficiency is lower. The smaller direct writing range limits the further improvement of the manufactured CGH size, so that the adjustment of the extreme ultraviolet lithography objective lens is in a bottleneck, and the extreme ultraviolet lithography machine is further limited to enter a chip processing stage with higher precision. The low precision of the adjustment of the optical element of the extreme ultraviolet lithography objective lens is one of the important factors for limiting the production and use stages of the extreme ultraviolet lithography machine.
While the laser direct writing method has higher efficiency than the electron beam direct writing method, the laser spot is difficult to focus to be small enough due to the limit of diffraction limit, so that the resolution is limited to be improved, and the resolution is often smaller than that of the electron beam direct writing method, and only structures with line widths in the micron order can be generally made.
For example, the invention application with publication number CN112731776a discloses a method and a device for directly writing with double-mask high-flux laser super-resolution laser, the device comprises a polarization control module, a collimation beam expanding system, an excitation beam array mask, a polarization spectroscope, a suppression optical virtual mask formed by four-beam interference, a focusing high-numerical aperture objective lens, a three-dimensional controllable precision displacement table and other main devices, and the spatial light modulator continuously loads different calculation holograms in real time to realize the on-off of sub-beams of the excitation beam array, thereby realizing the direct writing of different patterns. The four light beams interfere in a certain angle to form an optical mask as a light inhibiting array, so that the direct writing resolution is improved. The direct writing effect of the system is richer, the direct writing efficiency and the resolution are further improved, and the problems of low direct writing speed, low resolution and the like of the existing laser direct writing system are effectively solved.
For another example, the application of the invention with publication number CN 114019764A discloses a super-resolution laser direct writing and imaging method and apparatus, the apparatus includes three light sources, which are respectively excitation light sources for initiating polymerization reaction of photoresist, excitation light for exciting fluorescent dye molecules in the photoresist from a ground state to an excited state, an inhibition light source or a depletion light source for inhibiting polymerization of the photoresist and simultaneously enabling the fluorescent dye molecules to generate stimulated radiation, and the inhibition light and the depletion light are the same light source. The excitation light for initiating the polymerization of the photoresist is collimated and finally converged into a round solid light spot on the sample surface through the objective lens; after collimation, the suppressed light modulates the phase through a phase mask, and finally, the suppressed light is converged on a sample surface by an objective lens to form an annular hollow light spot; the excitation light of fluorescent dye in the photoresist is collimated and finally converged on the sample surface through the objective lens to form a round solid light spot.
However, the laser may have laser power fluctuations during use, which may have an effect on the accuracy of writing. In addition, the temperature of the objective lens may rise due to the irradiation of light during the use process, and the temperature of the objective lens rises to cause thermal expansion and contraction of the objective lens, slight thermal deformation occurs, so that the focusing position deviates from the expected position and wave aberration occurs, and the writing quality is reduced.
Disclosure of Invention
The invention aims to provide an amplitude type calculation hologram realizing device and method. The method solves the problem that the high-precision detection of the aspheric surface shape in the existing extreme ultraviolet lithography objective system requires a large-area calculation hologram.
The invention provides an amplitude type calculation hologram realizing device, which is used for adjusting an extreme ultraviolet lithography objective lens and comprises a photoresist excitation light path for initiating photoresist to generate photopolymerization reaction; a photoresist suppressing light path for suppressing a photopolymerization reaction of the photoresist; the photoresist excitation light path comprises an excitation light laser, an optical parametric oscillator, a first electro-optic modulator, a first light spot beam splitter and a first beam expander which are sequentially arranged along the light path; one light path of the first light spot beam splitter after beam splitting goes to the first beam expander, the other light path is also provided with a first focusing lens and a first photoelectric detector,
The photoresist suppression light path comprises a suppression light laser, a second electro-optical modulator, a second light spot beam splitter and a second beam expander which are sequentially arranged along the light path; one light path of the second light spot beam splitter after beam splitting goes to a second beam expander, the other light path is also provided with a second focusing lens and a second photoelectric detector,
The amplitude-type calculation hologram realizing device also comprises a control system,
The first photoelectric detector detects the power of the excitation light and compares the power with a set standard value range, if the power exceeds the standard value range, the control system controls the first photoelectric modulator to adjust the power to the standard value range,
The second photoelectric detector detects the power of the inhibition light and compares the power with a set standard value range, and if the power exceeds the standard value range, the control system controls the second photoelectric modulator to adjust the power to the standard value range.
Preferably, the photoresist excitation light path and the photoresist suppressing light path are combined by a polarizing beam splitter. The polarizing beam splitter may be used to couple out light beams having different polarization directions.
Preferably, the beam combining optical path includes an excitation optical path along the photoresist and a suppression optical path along the photoresist. The light path after beam combination is sequentially provided with a spatial light modulator, a first quarter wave plate, a third focusing lens, a third reflecting mirror, a second quarter wave plate, a writing objective lens and a nano displacement table,
The beam-combining light sequentially passes through the spatial light modulator, the first quarter wave plate, the third focusing lens and the third reflecting mirror, and returns to the spatial light modulator through the third focusing lens and the first quarter wave plate after being reflected,
Wherein the excitation light in the combined beam light is modulated by 0-pi phase by the spatial light modulator and then passes through the first quarter wave plate, the inhibition light in the combined beam light passes through the first quarter wave plate for the second time and then enters the spatial light modulator, the inhibition light is modulated by 0-pi phase by the spatial light modulator,
The combined beam light passes through the position conjugate of the spatial light modulator twice in sequence,
The combined light passes through the spatial light modulator twice in sequence and then passes through the second quarter wave plate, the inscription objective lens and the nano displacement table in sequence,
The temperature sensor for detecting the temperature of the inscription objective lens is arranged at the inscription objective lens, and the control system receives the signal of the temperature sensor and adjusts the phase of the spatial light modulator according to the temperature of the inscription objective lens detected by the temperature sensor.
Specifically, before the combined beam reaches the spatial light modulator, the excitation beam is horizontally polarized, the inhibition beam is vertically polarized, the modulation of the excitation beam is completed by passing through the spatial light modulator for the first time, the excitation beam is adjusted to be vertically polarized by passing through the quarter wave plate twice by the two beams of light due to the second reflecting mirror, the inhibition beam is adjusted to be horizontally polarized, and the modulation of the inhibition beam is completed by passing through the spatial light modulator for the second time.
More preferably, the amplitude type calculation hologram realizing apparatus further comprises an illumination light path including an illumination light source for illuminating the sample placed on the nano displacement stage, and a fourth focusing lens and a camera,
The beam combining light path is provided with a third light spot beam splitter between the second quarter wave plate and the writing objective lens, and the combined light enters the writing objective lens after being reflected by the third light spot beam splitter; the illumination light generated by the illumination light source is transmitted through the third light spot beam splitter after passing through the sample, enters the fourth focusing lens for focusing and is imaged in the camera.
The invention also provides an amplitude-type calculation hologram implementation method, which uses the amplitude-type calculation hologram implementation device, and comprises the following steps:
(1) The laser emitted by the excitation light laser is used as excitation light of photoresist polymerization reaction, the wavelength of the excitation light is changed through an optical parametric oscillator, then the excitation light switch and the intensity are modulated through a first electro-optical modulator, one light path is focused through a first focusing lens and enters a first photoelectric detector after passing through a first facula beam splitter, and the other light path is collimated and expanded through a first beam expander and then enters a beam combining light path;
(2) The laser emitted by the inhibition light laser is used as loss light of photoresist polymerization reaction, the inhibition light modulates the inhibition light switch and the intensity through a second electro-optical modulator, one light path passes through a second light spot beam splitter and then enters a second photoelectric detector through a second focusing lens, and the other light path passes through a second beam expander to realize collimation and beam expansion of light beams and then enters a beam combining light path;
(3) The first photoelectric detector detects the power of the excitation light and compares the power with a set standard value range, if the power exceeds the standard value range, the control system controls the first photoelectric modulator to adjust the power to the standard value range,
The second photoelectric detector detects the power of the inhibition light and compares the power with a set standard value range, and if the power exceeds the standard value range, the control system controls the second photoelectric modulator to adjust the power to the standard value range.
The first photoelectric detector detects the power of excitation light, the second photoelectric detector detects the power of inhibition light, the detection result is compared with the respective set values, when the detection result exceeds the respective set standard value range, adjustment is needed, the excitation light corresponds to the first electro-optical modulator, the inhibition light corresponds to the second electro-optical modulator, and the power of emergent light is adjusted by adjusting the electric field intensity of the electro-optical modulator. If the upper limit is exceeded, the number is reduced, and if the lower limit is exceeded, the number is increased.
More preferably, the photoresist excitation light path and the photoresist suppressing light path are combined by a polarizing beam splitter. The polarizing beam splitter may be used to couple out light beams having different polarization directions.
More preferably, the beam combining optical path comprises a spatial light modulator, a first quarter wave plate, a third focusing lens, a third reflecting mirror, a second quarter wave plate, a writing objective lens and a nano displacement table which are sequentially arranged along the optical path after the photoresist exciting optical path and the photoresist suppressing optical path are combined,
The beam-combining light sequentially passes through the spatial light modulator, the first quarter wave plate, the third focusing lens and the third reflecting mirror, and returns to the spatial light modulator through the third focusing lens and the first quarter wave plate after being reflected,
Wherein the excitation light in the combined beam light is modulated by 0-pi phase by the spatial light modulator and then passes through the first quarter wave plate, the inhibition light in the combined beam light passes through the first quarter wave plate for the second time and then enters the spatial light modulator, the inhibition light is modulated by 0-pi phase by the spatial light modulator,
The combined beam light passes through the position conjugate of the spatial light modulator twice in sequence,
After the combined beam light passes through the spatial light modulator twice, the combined beam light is changed into circularly polarized light through the second quarter wave plate, the circularly polarized light passes through the writing objective lens and is converged on a photoresist sample surface placed on the nanometer displacement table, the exciting light in the combined beam light is converged on the photoresist sample surface to form a round solid light spot, the inhibiting light in the combined beam light is converged to form an annular hollow light spot, and the hollow light spot formed by the inhibiting light covers the edge of the solid light spot formed by the exciting light, so that the edge writing of the exciting light is inhibited.
Further preferably, a temperature sensor for detecting the temperature of the writing objective is arranged at the writing objective, and the control system receives the signal of the temperature sensor and adjusts the phase of the spatial light modulator according to the temperature of the writing objective detected by the temperature sensor. The increase in temperature of the objective lens causes thermal expansion and shrinkage of the objective lens, with slight deformation, resulting in the introduction of aberrations into the optical system. Such aberrations adversely affect the writing quality, so that the writing result is deteriorated. Therefore, as the temperature of the writing objective lens increases, the phase of the spatial light modulator is adjusted, and the aberration caused by the temperature is compensated, so that the stability of the laser for long-time writing can be ensured.
Compared with the prior art, the invention has the following beneficial technical effects:
(1) The large-area amplitude type calculation hologram for adjusting the extreme ultraviolet lithography objective lens is realized by utilizing the super-resolution laser direct writing of edge light inhibition, the defect of writing precision of a laser direct writing technology is overcome, and compared with the electron beam direct writing, the method has the advantages of simplicity and convenience in operation, low cost and the like;
(2) The compensation module is used for carrying out optical power and phase modulation compensation in real time in the writing process, so that the stability and the writing precision of the writing system in the writing of large-area amplitude type calculated holograms for a long time are ensured.
Drawings
FIG. 1 shows an amplitude type computer-generated hologram realizing apparatus for lithography adjustment of an extreme ultraviolet objective lens according to the present invention.
Fig. 2 shows a phase pattern of the spatial light modulator modulating the excitation light (a) and the suppression light (b) according to an embodiment of the present invention.
Fig. 3 is an amplitude-type calculation hologram primitive structure designed by the present invention.
FIG. 4 is a flow chart of a compensation module according to the present invention.
Detailed Description
Referring to fig. 1, the amplitude type calculation hologram realizing device of the present invention includes a photoresist excitation light path, a photoresist suppression light path, a beam combining light path of the photoresist excitation light path and the photoresist suppression light path, and an illumination light path. The photoresist excitation light path is used for initiating the photoresist to generate photopolymerization reaction. The photoresist suppressing light path is used for suppressing photopolymerization of the photoresist.
The photoresist excitation light path sequentially passes through an excitation light laser 1, an optical parametric oscillator 2, a first electro-optical modulator 3, a first light spot beam splitter 4, a first focusing lens 11, a first photoelectric detector 12, a first beam expander 5, a first reflecting mirror 6 and a polarization beam splitter 15 along the light path. In the present embodiment, the excitation light laser 1 is constituted by a titanium sapphire femtosecond laser (company, model Chameleon Ultra II) using a femtosecond excitation light having a wavelength of 800 nm.
The photoresist suppression optical path sequentially passes through the suppression optical laser 7, the second electro-optical modulator 8, the second light spot beam splitter 9, the second focusing lens 13, the second photodetector 14, the second beam expander 10 and the polarization beam splitter 15 along the optical path. In this embodiment, the suppressing optical laser 7 is a continuous optical laser (model MGL-FN-532nm, vincrist industry electro-optical technologies Co., ltd.) having a wavelength of 532 nm.
The excitation light of the resist excitation light path and the suppression light of the resist suppression light path are combined in the polarization beam splitter 15 to form a combined light path.
The combined beam path sequentially passes through a second reflecting mirror 16, a spatial light modulator 17, a first quarter wave plate 18, a third focusing lens 19, a third reflecting mirror 20, a third focusing lens 19, the first quarter wave plate 18, the spatial light modulator 17, a fourth reflecting mirror 21, a fifth reflecting mirror 22, a sixth reflecting mirror 23, a second quarter wave plate 24, a third light spot beam splitter 25, a writing objective lens 26 and a nano displacement table 27, and finally irradiates a photoresist sample 28.
The illumination light path sequentially passes through an illumination light source 29, a photoresist sample 28, a nano displacement table 27, a writing objective lens 26, a third light spot beam splitter 25, a fourth focusing lens 30 and a camera 31.
The amplitude-type computer-generated hologram implementation device of the present invention further includes a control system, wherein in the embodiment shown in the figure, the control system is a computer 33, and the computer 33 is connected to the first electro-optical modulator 3, the second electro-optical modulator 8, the spatial light modulator 17, the nano-displacement table 27, the first photodetector 12, the second photodetector 14, the camera 30, and the temperature sensor 32.
The working process of the amplitude type calculation hologram realizing device in the embodiment is as follows:
(1) The 800nm femtosecond pulse laser is used as an excitation light laser 1, the emitted laser is used as excitation light of photoresist polymerization reaction, the pulse width is 120fs, the excitation light changes wavelength through an optical parametric oscillator 2, 532nm excitation light is output, the pulse width is 140fs, the switch and the intensity of the excitation light are modulated through a first electro-optical modulator 3, 90-degree reflection light of the excitation light is focused through a first focusing lens 11 and enters a first photoelectric detector 12 after passing through a first light spot beam splitter 4, the collimation and the beam expansion of light beams are realized through a first beam expander 5, and finally the light is combined through a polarization beam splitter 15 through a first reflecting mirror 6.
(2) The 532nm continuous light laser is used as loss light (inhibition light) for inhibiting the polymerization reaction of the photoresist, the inhibition light is modulated on-off and intensity by the second electro-optical modulator 8, 90 DEG reflected light of the inhibition light passes through the second facula beam splitter 9 and is focused by the second focusing lens 13 to enter the second photoelectric detector 14, and the transmitted light passes through the second beam expander 10 to realize collimation and beam expansion of the light beam, and finally the light beam is combined by the polarization beam splitter 15.
(3) The light path of the photoresist excitation light path and the light path of the photoresist suppression light path are subjected to 0-pi phase modulation (shown in fig. 2 (a)) through the second reflecting mirror 16 to the spatial light modulator 17, then through the first quarter wave plate 18, the third focusing lens 19 and the third reflecting mirror 20, the reflected light is subjected to 0-pi phase modulation (shown in fig. 2 (b)) through the third focusing lens 19, the first quarter wave plate 18, the spatial light modulator 17, the modulated combined light is emitted through the fourth reflecting mirror 21, the fifth reflecting mirror 22 and the sixth reflecting mirror 23, then is subjected to circularly polarized light through the second quarter wave plate 24, then is converged on the photoresist sample surface 28 placed on the nanometer displacement table 27 through the third light spot beam splitter 25 and the writing objective lens 26, the exciting light is converged on the photoresist sample surface 28 to form a solid light spot, the writing suppression light is converged to form a ring hollow light spot, and finally the required pattern is obtained through processing.
(4) The light emitted by the illumination light source 29 is used as illumination light in the photoetching process, firstly enters the inscription objective 26 through the photoresist sample 28 and the nano displacement table 27, then enters the fourth focusing lens 30 through the third light spot beam splitter 25 in a transmission way, and finally is imaged by the camera 31.
(5) The computer 33 outputs control signals to the first electro-optical modulator 3 and the second electro-optical modulator 8 to control the switching and the light intensity of the light, and simultaneously outputs control signals to the spatial light modulator 17 to control the phase mode of the spatial light modulator 17, and further controls the two-dimensional or three-dimensional movement of the nano displacement table 26, the temperature sensor 32, and the signal reading, processing and storage of the first photodetector 12, the second photodetector 14 and the camera 31.
(6) The amplitude type calculation hologram designed in the step (3) is large in size, the primitive structure of the amplitude type calculation hologram is round or oval (shown in fig. 3), and in order to ensure the precision of the calculation hologram, a writing system is provided with a sufficient compensation module, and a flow chart of the compensation module is shown in fig. 4. The light source power compensation module comprises a computer, an electro-optical modulator, a light spot beam splitter and a photoelectric detector. The objective lens thermal deformation wavefront compensation module comprises a computer, a temperature sensor and a spatial light modulator.
When the power of the light source is compensated, the first photoelectric detector detects the power of the excitation light and compares the power with a set standard value range, and if the power exceeds the standard value range, the control system controls the first photoelectric modulator to adjust the power to the standard value range. The second photodetector detects the power of the suppressed light and compares it with a set standard value range, and if the power exceeds the standard value range, the control system controls the second electro-optical modulator to adjust to the standard value range. The first photoelectric detector detects the power of excitation light, the second photoelectric detector detects the power of inhibition light, the detection result is compared with the respective set values, when the detection result exceeds the respective set standard value range, adjustment is needed, the excitation light corresponds to the first electro-optical modulator, the inhibition light corresponds to the second electro-optical modulator, and the power of emergent light is adjusted by adjusting the electric field intensity of the electro-optical modulator. If the upper limit is exceeded, the number is reduced, and if the lower limit is exceeded, the number is increased.
When the thermal deformation wavefront of the objective lens is compensated, the temperature of the inscription objective lens is detected by a temperature sensor which is arranged at the inscription objective lens and used for detecting the temperature of the inscription objective lens, and the control system receives the signal of the temperature sensor and adjusts the phase of the spatial light modulator according to the temperature of the inscription objective lens detected by the temperature sensor. The temperature of the objective lens is increased to cause thermal expansion and cold contraction of the objective lens, slight deformation is caused, the writing laser is not focused accurately, the writing laser is sharp from the beginning to the end, and the writing stability is affected under the condition that temperature compensation is not performed. Therefore, along with the temperature rise of the writing objective lens, the phase of the spatial light modulator is adjusted, the temperature is compensated, the phase modulation is optimal, the sharpness of writing laser is ensured, and the writing stability under long-time writing operation is improved.
(7) The device can realize the inscription of the amplitude type calculation hologram, and the main steps are that the uniform photoresist is smeared on a chromed quartz substrate, the exposure processing is carried out on the photoresist after the processing pattern is led in by a computer, and then the photoresist in the exposure area is dissolved and shed after development and fixation, so that the lower chromium layer is exposed; and then carrying out wet etching by using a chromium etching liquid to carry out a chromium layer etching process, finally removing a photoresist layer on the mask plate by using a wet or dry method mode, and cleaning the mask plate to finally obtain the planar graph structure with different light transmittance.
Claims (8)
1. An amplitude type calculation hologram realizing device is used for adjusting an extreme ultraviolet lithography objective lens and comprises a photoresist excitation light path for initiating photoresist to generate photopolymerization reaction; a photoresist suppressing light path for suppressing a photopolymerization reaction of the photoresist; and a beam combining optical path of the photoresist excitation optical path and the photoresist suppression optical path, characterized in that,
The photoresist excitation light path comprises an excitation light laser, an optical parametric oscillator, a first electro-optical modulator, a first light spot beam splitter and a first beam expander which are sequentially arranged along the light path; one light path of the first light spot beam splitter after beam splitting goes to the first beam expander, the other light path is also provided with a first focusing lens and a first photoelectric detector,
The photoresist suppression light path comprises a suppression light laser, a second electro-optical modulator, a second light spot beam splitter and a second beam expander which are sequentially arranged along the light path; one light path of the second light spot beam splitter after beam splitting goes to a second beam expander, the other light path is also provided with a second focusing lens and a second photoelectric detector,
The amplitude-type calculation hologram realizing device also comprises a control system,
The first photoelectric detector detects the power of the excitation light and compares the power with a set standard value range, if the power exceeds the standard value range, the control system controls the first photoelectric modulator to adjust the power to the standard value range,
The second photoelectric detector detects the power of the inhibition light and compares the power with a set standard value range, and if the power exceeds the standard value range, the control system controls the second photoelectric modulator to adjust the power to the standard value range.
2. The amplitude-type computed hologram implementation apparatus according to claim 1, wherein the resist excitation light path and the resist suppression light path are combined by one polarization beam splitter.
3. The apparatus of claim 1, wherein the beam combining optical path comprises a spatial light modulator, a first quarter wave plate, a third focusing lens, a third reflecting mirror, a second quarter wave plate, a writing objective lens, and a nano-displacement stage sequentially arranged along an optical path after the photoresist exciting optical path and the photoresist suppressing optical path are combined,
The beam-combining light sequentially passes through the spatial light modulator, the first quarter wave plate, the third focusing lens and the third reflecting mirror, and returns to the spatial light modulator through the third focusing lens and the first quarter wave plate after being reflected,
Wherein the excitation light in the combined beam light is modulated by 0-pi phase by the spatial light modulator and then passes through the first quarter wave plate, the inhibition light in the combined beam light passes through the first quarter wave plate for the second time and then enters the spatial light modulator, the inhibition light is modulated by 0-pi phase by the spatial light modulator,
The combined beam light passes through the position conjugate of the spatial light modulator twice in sequence,
The combined light passes through the spatial light modulator twice in sequence and then passes through the second quarter wave plate, the inscription objective lens and the nano displacement table in sequence,
The temperature sensor for detecting the temperature of the inscription objective lens is arranged at the inscription objective lens, and the control system receives the signal of the temperature sensor and adjusts the phase of the spatial light modulator according to the temperature of the inscription objective lens detected by the temperature sensor.
4. The amplitude-type computer-generated hologram realizing apparatus according to claim 3, further comprising an illumination light path including an illumination light source for illuminating the sample placed on the nano-displacement stage, and a fourth focusing lens and a camera,
The beam combining light path is provided with a third light spot beam splitter between the second quarter wave plate and the writing objective lens, and the combined light enters the writing objective lens after being reflected by the third light spot beam splitter; the illumination light generated by the illumination light source is transmitted through the third light spot beam splitter after passing through the sample, enters the fourth focusing lens for focusing and is imaged in the camera.
5. An amplitude-based computer-generated hologram realizing method using the amplitude-based computer-generated hologram realizing apparatus according to any one of claims 1 to 4, the amplitude-based computer-generated hologram realizing method comprising the steps of:
(1) The laser emitted by the excitation light laser is used as excitation light of photoresist polymerization reaction, the wavelength of the excitation light is changed through an optical parametric oscillator, then the excitation light switch and the intensity are modulated through a first electro-optical modulator, one light path is focused through a first focusing lens and enters a first photoelectric detector after passing through a first facula beam splitter, and the other light path is collimated and expanded through a first beam expander and then enters a beam combining light path;
(2) The laser emitted by the inhibition light laser is used as loss light of photoresist polymerization reaction, the inhibition light modulates the inhibition light switch and the intensity through a second electro-optical modulator, one light path passes through a second light spot beam splitter and then enters a second photoelectric detector through a second focusing lens, and the other light path passes through a second beam expander to realize collimation and beam expansion of light beams and then enters a beam combining light path;
(3) The first photoelectric detector detects the power of the excitation light and compares the power with a set standard value range, if the power exceeds the standard value range, the control system controls the first photoelectric modulator to adjust the power to the standard value range,
The second photoelectric detector detects the power of the inhibition light and compares the power with a set standard value range, and if the power exceeds the standard value range, the control system controls the second photoelectric modulator to adjust the power to the standard value range.
6. The method of claim 5, wherein the photoresist excitation light path and the photoresist suppression light path are combined by a polarizing beam splitter.
7. The method of claim 5, wherein the beam combining optical path includes a spatial light modulator, a first quarter wave plate, a third focusing lens, a third reflecting mirror, a second quarter wave plate, a writing objective lens, and a nano-displacement stage sequentially arranged along an optical path after the photoresist excitation optical path and the photoresist suppression optical path are combined,
The beam-combining light sequentially passes through the spatial light modulator, the first quarter wave plate, the third focusing lens and the third reflecting mirror, and returns to the spatial light modulator through the third focusing lens and the first quarter wave plate after being reflected,
Wherein the excitation light in the combined beam light is modulated by 0-pi phase by the spatial light modulator and then passes through the first quarter wave plate, the inhibition light in the combined beam light passes through the first quarter wave plate for the second time and then enters the spatial light modulator, the inhibition light is modulated by 0-pi phase by the spatial light modulator,
The combined beam light passes through the position conjugate of the spatial light modulator twice in sequence,
After the combined beam light passes through the spatial light modulator twice, the combined beam light is changed into circularly polarized light through the second quarter wave plate, the circularly polarized light passes through the writing objective lens and is converged on a photoresist sample surface placed on the nanometer displacement table, the exciting light in the combined beam light is converged on the photoresist sample surface to form a round solid light spot, the inhibiting light in the combined beam light is converged to form an annular hollow light spot, and the hollow light spot formed by the inhibiting light covers the edge of the solid light spot formed by the exciting light, so that the edge writing of the exciting light is inhibited.
8. The method according to claim 7, wherein a temperature sensor for detecting the temperature of the writing objective lens is provided at the writing objective lens, and the control system receives a signal from the temperature sensor and adjusts the phase of the spatial light modulator according to the temperature of the writing objective lens detected by the temperature sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311592943.3A CN117289563B (en) | 2023-11-27 | 2023-11-27 | Amplitude type calculation hologram realization device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311592943.3A CN117289563B (en) | 2023-11-27 | 2023-11-27 | Amplitude type calculation hologram realization device and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117289563A CN117289563A (en) | 2023-12-26 |
| CN117289563B true CN117289563B (en) | 2024-04-19 |
Family
ID=89257555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311592943.3A Active CN117289563B (en) | 2023-11-27 | 2023-11-27 | Amplitude type calculation hologram realization device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117289563B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109490201A (en) * | 2018-11-06 | 2019-03-19 | 浙江大学 | A kind of structure light generating means and method based on beam shaping |
| CN112666804A (en) * | 2021-01-14 | 2021-04-16 | 之江实验室 | Edge light suppression array parallel direct-writing device based on interference dot matrix and DMD |
| CN112731776A (en) * | 2021-01-14 | 2021-04-30 | 之江实验室 | Double-mask high-flux laser super-resolution laser direct writing method and device |
| CN112859534A (en) * | 2020-12-31 | 2021-05-28 | 之江实验室 | Parallel direct-writing device and method based on edge light suppression array |
| CN114019764A (en) * | 2021-10-25 | 2022-02-08 | 之江实验室 | Super-resolution laser direct writing and imaging method and device |
| CN114019765A (en) * | 2021-10-25 | 2022-02-08 | 之江实验室 | Common-path phase modulation laser direct writing method and device based on edge light suppression |
| WO2022088533A1 (en) * | 2020-10-29 | 2022-05-05 | 青岛理工大学 | Fractional fourier holographic femtosecond laser three-dimensional parallel processing system and method, and fractional fourier holographic femtosecond laser three-dimensional parallel processing monitoring system |
| CN114924466A (en) * | 2022-05-25 | 2022-08-19 | 南京理工大学 | High-precision maskless laser projection lithography system and method |
| WO2023155238A1 (en) * | 2022-02-17 | 2023-08-24 | 苏州大学 | Dynamic light field spatial coherence function and amplitude function synchronous modulation system and method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7283286B2 (en) * | 2004-12-27 | 2007-10-16 | Sony Corporation | Hologram recording/reproducing device and optical unit |
-
2023
- 2023-11-27 CN CN202311592943.3A patent/CN117289563B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109490201A (en) * | 2018-11-06 | 2019-03-19 | 浙江大学 | A kind of structure light generating means and method based on beam shaping |
| WO2022088533A1 (en) * | 2020-10-29 | 2022-05-05 | 青岛理工大学 | Fractional fourier holographic femtosecond laser three-dimensional parallel processing system and method, and fractional fourier holographic femtosecond laser three-dimensional parallel processing monitoring system |
| CN112859534A (en) * | 2020-12-31 | 2021-05-28 | 之江实验室 | Parallel direct-writing device and method based on edge light suppression array |
| CN112666804A (en) * | 2021-01-14 | 2021-04-16 | 之江实验室 | Edge light suppression array parallel direct-writing device based on interference dot matrix and DMD |
| CN112731776A (en) * | 2021-01-14 | 2021-04-30 | 之江实验室 | Double-mask high-flux laser super-resolution laser direct writing method and device |
| CN114019764A (en) * | 2021-10-25 | 2022-02-08 | 之江实验室 | Super-resolution laser direct writing and imaging method and device |
| CN114019765A (en) * | 2021-10-25 | 2022-02-08 | 之江实验室 | Common-path phase modulation laser direct writing method and device based on edge light suppression |
| WO2023155238A1 (en) * | 2022-02-17 | 2023-08-24 | 苏州大学 | Dynamic light field spatial coherence function and amplitude function synchronous modulation system and method |
| CN114924466A (en) * | 2022-05-25 | 2022-08-19 | 南京理工大学 | High-precision maskless laser projection lithography system and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117289563A (en) | 2023-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10451559B2 (en) | Illumination source for an inspection apparatus, inspection apparatus and inspection method | |
| TWI666528B (en) | Supercontinuum radiation source and optical measurement system, alignment mark measurement system and lithographic apparatus comprising the same | |
| JP5180355B2 (en) | Self-referencing interferometer, alignment system and lithographic apparatus | |
| KR101097232B1 (en) | Tunable wavelength illumination system | |
| JP5300181B2 (en) | Measurement apparatus, lithographic apparatus, process apparatus, measurement method, and device manufacturing method. | |
| US7599069B2 (en) | Vector beam generator using a passively phase stable optical interferometer | |
| CN113189848B (en) | Multichannel parallel super-resolution direct-writing type photoetching system based on optical fiber array | |
| CN112286014B (en) | Super-resolution laser printing device based on columnar vector polarized light | |
| CN104111590B (en) | Based on the laser direct-writing device of combined vortex bivalve focal beam spot | |
| TW200403541A (en) | Lithographic apparatus, device manufacturing method, and device manufactured thereby | |
| US6403966B1 (en) | Measurement method and apparatus | |
| NL2016427A (en) | Alignment system. | |
| KR20050101335A (en) | Transverse differential interferometric confocal microscopy | |
| CN104781718A (en) | Light irradiation device | |
| CN114019764B (en) | Super-resolution laser direct writing and imaging method and device | |
| JP2018537718A (en) | Method and system for printing an array of geometric elements | |
| CN117289563B (en) | Amplitude type calculation hologram realization device and method | |
| CN113504717A (en) | Uniform holographic two-photon microscope system based on space-time focusing | |
| CN114019765B (en) | Common-path phase modulation laser direct writing method and device based on edge light suppression | |
| CN111307067A (en) | Optical measuring system | |
| CN113515016B (en) | Double-beam laser direct writing method and device based on DMD digital mask | |
| KR102105814B1 (en) | Laser Spatial Modulation Super-resolution Optical Microscopy | |
| WO2021097921A1 (en) | Pico-microscope | |
| Livingstone et al. | Development of micro/nano structure pattern generation using direct-beam interferometry | |
| CN116295038B (en) | Nanoscale two-dimensional displacement measuring device and method based on super-surface grating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |