CN114014671B - 一种氮化硅基陶瓷天线罩制备方法 - Google Patents
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Abstract
本发明公开了一种氮化硅基陶瓷天线罩制备方法，利用增材制造成型以氮化硅陶瓷为基体材料得到胚体，将获取的坯体进行烧结成型得到天线罩初始结构，天线罩初始结构内部设置有变密度多孔支撑层，采用化学气相沉积或溶胶凝胶法变密度多孔支撑层进行填充，获得氮化硅基陶瓷天线罩，本发明采用氮化硅陶瓷为基体材料成形性能好，烧结线收缩小于0.7％，并在天线罩初始结构内部设置有变密度多孔支撑层，采用可控密度法制备得到多倍宽频带天线罩，采用化学气相沉积或溶胶凝胶法变密度多孔支撑层进行填充，实现异质材料、特异结构的“双梯度分布”，同时可控制构件透波性能，可控制梯度结构，使得天线罩的透波性、结构强度与耐热性等多功能性达到最优化。
Description
技术领域
本发明属于陶瓷增材制造技术领域，涉及一种氮化硅基陶瓷天线罩制备方法。
背景技术
天线罩是飞行器的一个重要部件，它位于飞行器最前端，为了保证各种飞行器的飞行速度，一般天线罩呈流线形状，天线罩应具有导流、防热、透波、承载等多种功能，主要保护飞行器在恶劣环境条件下的通讯、遥测、制导等系统能正常工作。
天线罩作为飞行器的重要构件之一，不仅影响着其制导能力，同时其还直接影响着飞行器的载荷与速度，进而对其打击能力也有着重要的影响。当其在海平面高度以8～12Ma飞行时，其天线罩表面温度将达到2000℃以上，这不仅对天线罩的高温透波性(介电常数ε<10，约为2.5、介电损耗tan<0.001)等提出了严苛要求，同时对其高超速飞行的抗气流冲刷、耐热性及抗热冲击和结构强度等均提出了更高的要求，目前树脂基材料、微晶玻璃、石英、Al2O3等材料均无法达到相关的性能需求，性能更好的氮化硅基陶瓷目前也被应用到天线罩增材打印过程中，但是单一的结构无法满足透波性、耐热性能要求。为获得透波性、结构强度与耐热性等多功能性的最优化，要求制备出具有由表面到内部具有以氮化硅基陶瓷为基体的复合陶瓷天线罩，这对提升我国超音速导弹天线罩材料性能和制造水平具有重大意义，而这将使天线罩的成形制造面临诸多挑战。
发明内容
本发明的目的在于提供一种氮化硅基陶瓷天线罩制备方法，以克服现有技术的不足。
为达到上述目的，本发明采用如下技术方案：
一种氮化硅基陶瓷天线罩制备方法，包括以下步骤：
S1，根据待成型天线罩成型切片，利用增材制造成型以氮化硅陶瓷为基体材料得到胚体；
S2，将获取的坯体进行烧结成型得到天线罩初始结构，天线罩初始结构内部设置有变密度多孔支撑层，采用化学气相沉积或溶胶凝胶法变密度多孔支撑层进行填充，获得氮化硅基陶瓷天线罩。
进一步的，胚体结构包括耐热陶瓷层和变密度多孔支撑层，变密度多孔支撑层位于耐热陶瓷层内侧。
进一步的，变密度多孔支撑层为开放式支撑结构
进一步的，胚体中耐热陶瓷层内的变密度多孔支撑层内层致密度大于外层致密度。
进一步的，变密度支撑层由氮化硅点阵成型，密度由外至内逐渐降低；致密陶瓷层与变密度支撑层的平均密度差异大于1.0g/cm3。
进一步的，耐热陶瓷层层厚为1mm～5mm，致密度不低于80％。
进一步的，采用共烧结或共处理方法进行一体化烧结。
进一步的，将成型的胚体放入烧结炉中，采用助烧填充，充入氮气至0.3MPa以上，随后升温至烧结温度1600℃-1800℃，并利用助烧填充的热性能差异或对微波的吸收性能差异实现天线罩不同结构在不同温度下烧结，烧结完成后随炉冷却，得到天线罩初始结构。
进一步的，助烧填充材料采用碳化硅、碳化钛、氮化铝等高温陶瓷半导体粉体中的一种或几种。
进一步的，助烧填充材料的粉体形貌可采用造粒球形粉、空心微球、实体粉末中的一种或几种，其粒径为0.5μm～50μm。
与现有技术相比，本发明具有以下有益的技术效果：
本发明一种氮化硅基陶瓷天线罩制备方法，根据待成型天线罩成型切片，利用增材制造成型以氮化硅陶瓷为基体材料得到胚体，将获取的坯体进行烧结成型得到天线罩初始结构，天线罩初始结构内部设置有变密度多孔支撑层，采用化学气相沉积或溶胶凝胶法变密度多孔支撑层进行填充，获得氮化硅基陶瓷天线罩，本发明采用氮化硅陶瓷为基体材料成形性能好，烧结线收缩小于0.7％，并在天线罩初始结构内部设置有变密度多孔支撑层，采用可控密度法制备得到多倍宽频带天线罩，采用化学气相沉积或溶胶凝胶法变密度多孔支撑层进行填充，实现异质材料、特异结构的“双梯度分布”，同时可控制构件透波性能，可控制梯度结构，使得天线罩的透波性、结构强度与耐热性等多功能性达到最优化。
进一步的，利用助烧填充的热性能差异或对微波的吸收性能差异实现天线罩不同结构在不同温度下烧结，可定制不同的梯度结构，使得介电常数≤3.5,介电损耗≤0.01。
附图说明
图1为本发明实施例中天线罩成型剖面示意图。
图2为本发明实施例中氮化硅基陶瓷天线罩成型立体图。
图3为本发明实施例中氮化硅基陶瓷天线罩成型实物图。
具体实施方式
下面结合附图对本发明做进一步详细描述：
一种氮化硅基陶瓷天线罩制备方法，包括以下步骤：
S1，根据待成型天线罩成型切片，利用增材制造成型以氮化硅陶瓷为基体材料得到胚体；
以氮化硅陶瓷为基体材料，采用陶瓷增材制造技术制备得到胚体；胚体结构包括耐热陶瓷层和变密度多孔支撑层，变密度多孔支撑层位于耐热陶瓷层内侧，变密度多孔支撑层为开放式支撑结构，即变密度多孔支撑层设有连通其内部的通孔，使其自身形成透孔结构；
所成型的胚体中耐热陶瓷层内的变密度多孔支撑层内层致密度大于外层致密度；其中所述变密度支撑层由氮化硅点阵成型，密度由外至内逐渐降低；其中，致密陶瓷层与变密度支撑层的平均密度差异大于1.0g/cm3。
耐热陶瓷层层厚为1mm～5mm，致密度不低于80％。
S2，将获取的坯体进行烧结成型得到天线罩初始结构，天线罩初始结构内部为变密度多孔支撑层，采用化学气相沉积或溶胶凝胶法对变密度多孔支撑层进行填充，获得氮化硅基陶瓷天线罩。
烧结采用共烧结或共处理方法进行一体化烧结。
共烧结或共处理的方法具体为：将成型的胚体放入气氛炉或微波烧结炉中，根据天线罩胚体不同区域的密度差异选择不同性质的助烧物质填充或直接采用相同材质不同堆垛密度的助烧填充，充入氮气至0.3MPa以上，随后升温至烧结温度1600℃-1800℃，并利用助烧填充的热性能差异或对微波的吸收性能差异实现天线罩不同结构在不同温度下烧结，烧结完成后随炉冷却，得到天线罩初始结构。采用相同材质不同堆垛密度的助烧填充，如微波烧结时需要较小烧结变形的区域采用低微波吸收的物质作为填料，由于其微波能吸收少，发热量低，产生的热量小；而需要较大烧结变形的区域则采用高微波吸收的物质作为填料，由于其微波能吸收高，发热量高，产生的热量高；在不同的区域采用不同的填充物质即可实现对复杂构件不同区域烧结收缩的精确控制。
助烧填充材料采用碳化硅、碳化钛、氮化铝等高温陶瓷半导体粉体中的一种或几种，助烧填充材料的粉体形貌可采用造粒球形粉、空心微球、实体粉末中的一种或几种，其粒径为0.5μm～50μm。
具体的，采用化学气相沉积或溶胶凝胶法对开放式支撑结构进行隔热透波填充，隔热透波填充材质采用SiO2，Si3N4，BN气凝胶中的一种或几种复合；经填充后，即获得最终的天线罩结构。
本发明以氮化硅陶瓷作为基体材料，采用陶瓷增材制造技术对氮化硅基陶瓷天线罩进行成形，可以实现氮化硅基复合陶瓷增材制造，使天线罩耐温最高达2000℃。由外至内由致密层到变密度多孔支撑层，其中所述变密度支撑层氮化硅点阵密度由外至内逐渐降低；其中，致密陶瓷层与变密度支撑层的平均密度差异大于1.0g/cm3，独有的配方设计，使得天线罩成形性能好，烧结线收缩小于0.7％。本发明形成的天线罩结构一体近净成形，指零件成形后仅需少量加工或不再加工，就可用作构件的成形技术。
将所成形的陶瓷天线罩坯体或需处理样件放入气氛炉或微波烧结炉中，根据天线罩不同区域的密度差异选择不同性质的助烧填充或直接采用相同材质不同堆垛密度的助烧填充，充入氮气至0.3MPa以上，随后升温至烧结温度1600℃-1800℃，并利用助烧填充的热性能差异或对微波的吸收性能差异实现天线罩不同结构在不同温度下烧结，可定制不同的梯度结构，使得介电常数≤3.5,介电损耗≤0.01。
将所得到的陶瓷天线罩结构放入气相沉积平台中进行处理，对其内部孔洞进行隔热透波填充，所述隔热透波填充，采用化学气相沉积或溶胶凝胶方法将变密度支撑层中的空位填充，材质包括但不限于SiO2，Si3N4，BN气凝胶中的一种或几种复合，可实现异质材料、特异结构“双梯度分布”，最终实现定制天线罩透波性能。
在三维制图软件中导入待成型的天线罩零件模型，按照待成型零件的实际透波性能要求与相应的介电常数梯度要求，通过调整待成型零件在空间坐标中的角度、高度以及内部特征，进行修改零件，得到具有变密度多孔支撑层的氮化硅基陶瓷天线罩复杂结构，变密度多孔支撑层结构由外至内由致密层到变密度多孔支撑层，其中所述变密度支撑层氮化硅点阵密度由外至内逐渐降低；其中，致密陶瓷层与变密度支撑层的平均密度差异大于1.0g/cm3。耐热陶瓷层，层厚在1mm～5mm，致密度不低于80％。
如图1、图2所示，按照修改后的氮化硅基陶瓷天线罩复杂结构特征放置待成型零件，采用陶瓷增材制造技术一体成形，耐热陶瓷层及变密度支撑层；以氮化硅陶瓷作为基体材料，采用陶瓷增材制造技术对氮化硅基陶瓷天线罩进行成形，得到复杂氮化硅基陶瓷天线罩；
复杂氮化硅基陶瓷天线罩，其烧结采用共烧结或共处理方法进行一体化烧结。共烧结或共处理方法，其具体操作如下，将所成形的复杂氮化硅基陶瓷天线罩放入气氛炉或微波烧结炉中。根据天线罩不同区域的密度差异选择碳化硅、碳化钛进行助烧填充，充入氮气至0.5MPa，随后升温至烧结温度1750℃，并利用碳化硅、碳化钛的热性能差异实现天线罩不同结构在不同温度下烧结，烧结完成后随炉冷却，得到复杂氮化硅基陶瓷天线罩结构。
将所得到的复杂氮化硅基陶瓷天线罩结构放入气相沉积平台中进行处理，采用SiO2和Si3N4气凝胶复合物对其内部孔洞进行隔热透波填充，采用化学气相沉积方法将变密度支撑层中的空位填充，经填充后，即获得最终的轻质复杂结构天线罩，如图3所示，其10GHz下的介电常数相较于传统的致密天线罩材料可降低约40％以上，同时与传统天线罩相比，具有传统天线罩所不具备的宽频域透波性能。
Claims (1)
1.一种氮化硅基陶瓷天线罩制备方法，其特征在于，包括以下步骤：
S1，根据待成型天线罩成型切片，以氮化硅陶瓷为基体材料，采用陶瓷增材制造技术制备得到坯体；坯体结构包括耐热陶瓷层和变密度多孔支撑层，变密度多孔支撑层位于耐热陶瓷层内侧，变密度多孔支撑层为开放式支撑结构，即变密度多孔支撑层设有连通其内部的通孔，使其自身形成透孔结构；坯体中耐热陶瓷层内的变密度多孔支撑层内层致密度大于外层致密度，所述变密度多孔支撑层由氮化硅点阵成型，密度由外至内逐渐降低；
具体包括以下步骤：在三维制图软件中导入待成型的天线罩零件模型，按照待成型零件的实际透波性能要求与相应的介电常数梯度要求，通过调整待成型零件在空间坐标中的角度、高度以及内部特征，进行修改零件，得到具有变密度多孔支撑层的氮化硅基陶瓷天线罩复杂结构变密度多孔支撑层；
S2，将获取的坯体采用共烧结或共处理方法进行一体化烧结成型得到天线罩初始结构，天线罩初始结构内部设置有变密度多孔支撑层，变密度多孔支撑层为开放式支撑结构变密度多孔支撑层；耐热陶瓷层层厚为1mm~5mm，致密度不低于80%；耐热陶瓷层与变密度多孔支撑层的平均密度差异大于1.0g/cm3；
采用化学气相沉积或溶胶凝胶法对开放式支撑结构进行隔热透波填充，隔热透波填充材质采用SiO2，Si3N4，BN气凝胶中的一种或几种复合；经填充后，即获得最终的天线罩结构；
采用共烧结或共处理方法进行一体化烧结成型得到天线罩初始结构具体包括以下步骤：将获取的坯体放入气氛炉或微波烧结炉中，根据天线罩坯体不同区域的密度差异选择不同性质的助烧物质填充或直接采用相同材质不同堆垛密度的助烧填充，充入氮气至0.3MPa以上，随后升温至烧结温度1600℃-1800℃，并利用助烧填充的热性能差异或对微波的吸收性能差异实现天线罩不同结构在不同温度下烧结，烧结完成后随炉冷却，得到天线罩初始结构；助烧填充材料采用碳化硅、碳化钛、氮化铝粉体中的一种或几种，助烧填充材料的粉体形貌采用造粒球形粉，其粒径为0.5μm~50μm。
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