CN114008241A - 用于原子层沉积(ald)的设备和方法 - Google Patents
用于原子层沉积(ald)的设备和方法 Download PDFInfo
- Publication number
- CN114008241A CN114008241A CN202080045852.6A CN202080045852A CN114008241A CN 114008241 A CN114008241 A CN 114008241A CN 202080045852 A CN202080045852 A CN 202080045852A CN 114008241 A CN114008241 A CN 114008241A
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- Prior art keywords
- chamber
- actuator arms
- chamber plate
- actuator
- adjustment mechanism
- Prior art date
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- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 146
- 230000007246 mechanism Effects 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 238000000926 separation method Methods 0.000 claims description 11
- 238000006557 surface reaction Methods 0.000 claims description 5
- 239000007858 starting material Substances 0.000 claims description 4
- 238000010923 batch production Methods 0.000 abstract description 4
- 238000005192 partition Methods 0.000 description 5
- 239000003570 air Substances 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20195334 | 2019-04-25 | ||
FI20195334A FI130051B (en) | 2019-04-25 | 2019-04-25 | DEVICE AND METHOD |
PCT/FI2020/050267 WO2020216994A1 (en) | 2019-04-25 | 2020-04-24 | Apparatus and method for atomic layer deposition (ald) |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114008241A true CN114008241A (zh) | 2022-02-01 |
CN114008241B CN114008241B (zh) | 2024-01-26 |
Family
ID=72940746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080045852.6A Active CN114008241B (zh) | 2019-04-25 | 2020-04-24 | 用于原子层沉积(ald)的设备和方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11970773B2 (zh) |
EP (1) | EP3959355A4 (zh) |
CN (1) | CN114008241B (zh) |
FI (1) | FI130051B (zh) |
WO (1) | WO2020216994A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI130543B (en) * | 2021-08-13 | 2023-11-08 | Beneq Oy | Atomic layer growth device and method |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080145533A1 (en) * | 2006-11-29 | 2008-06-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and substrate processing method |
US20090136665A1 (en) * | 2007-11-27 | 2009-05-28 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
JP2009209447A (ja) * | 2008-02-04 | 2009-09-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20100028122A1 (en) * | 2008-08-01 | 2010-02-04 | Picosun Oy | Atomic layer deposition apparatus and loading methods |
DE202012001810U1 (de) * | 2012-02-22 | 2012-05-30 | Beneq Oy | Vorrichtung zum Verarbeiten von Substraten |
US20140150878A1 (en) * | 2012-11-30 | 2014-06-05 | Applied Materials, Inc. | Process chamber gas flow apparatus, systems, and methods |
CN105934837A (zh) * | 2014-01-21 | 2016-09-07 | 应用材料公司 | 允许低压工具替换的原子层沉积处理腔室 |
US20160281228A1 (en) * | 2013-03-22 | 2016-09-29 | Beneq Oy | Apparatus for processing two or more substrates in a batch process |
JP2016174158A (ja) * | 2016-04-08 | 2016-09-29 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US20170191160A1 (en) * | 2015-12-31 | 2017-07-06 | Lam Research Corporation | Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus |
CN107208267A (zh) * | 2015-01-14 | 2017-09-26 | 斯密特热能解决私人有限公司 | 原子层沉积设备 |
US20180096874A1 (en) * | 2016-10-03 | 2018-04-05 | Applied Materials, Inc. | Dynamic leveling process heater lift |
CN107974668A (zh) * | 2013-02-20 | 2018-05-01 | 应用材料公司 | 基座组件及处理室 |
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JP3471144B2 (ja) | 1995-09-06 | 2003-11-25 | 東京エレクトロン株式会社 | 縦型熱処理装置及びその断熱構造体並びに遮熱板 |
KR100698504B1 (ko) | 2000-08-02 | 2007-03-21 | 에이에스엠지니텍코리아 주식회사 | 화학 기상 증착 장치 |
US6753506B2 (en) * | 2001-08-23 | 2004-06-22 | Axcelis Technologies | System and method of fast ambient switching for rapid thermal processing |
KR100782529B1 (ko) | 2001-11-08 | 2007-12-06 | 에이에스엠지니텍코리아 주식회사 | 증착 장치 |
JP4397655B2 (ja) * | 2003-08-28 | 2010-01-13 | キヤノンアネルバ株式会社 | スパッタリング装置、電子部品製造装置及び電子部品製造方法 |
US7744730B2 (en) * | 2005-04-14 | 2010-06-29 | Tango Systems, Inc. | Rotating pallet in sputtering system |
US10041169B2 (en) | 2008-05-27 | 2018-08-07 | Picosun Oy | System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor |
JP5410174B2 (ja) | 2009-07-01 | 2014-02-05 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理システム |
US8895452B2 (en) * | 2012-05-31 | 2014-11-25 | Lam Research Corporation | Substrate support providing gap height and planarization adjustment in plasma processing chamber |
JP7235678B2 (ja) | 2017-05-01 | 2023-03-08 | アプライド マテリアルズ インコーポレイテッド | 真空分離及び前処理環境を伴う高圧アニールチャンバ |
-
2019
- 2019-04-25 FI FI20195334A patent/FI130051B/en active IP Right Grant
-
2020
- 2020-04-24 EP EP20796292.9A patent/EP3959355A4/en active Pending
- 2020-04-24 US US17/605,590 patent/US11970773B2/en active Active
- 2020-04-24 CN CN202080045852.6A patent/CN114008241B/zh active Active
- 2020-04-24 WO PCT/FI2020/050267 patent/WO2020216994A1/en unknown
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080145533A1 (en) * | 2006-11-29 | 2008-06-19 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and substrate processing method |
US20090136665A1 (en) * | 2007-11-27 | 2009-05-28 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
JP2009209447A (ja) * | 2008-02-04 | 2009-09-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20100028122A1 (en) * | 2008-08-01 | 2010-02-04 | Picosun Oy | Atomic layer deposition apparatus and loading methods |
DE202012001810U1 (de) * | 2012-02-22 | 2012-05-30 | Beneq Oy | Vorrichtung zum Verarbeiten von Substraten |
US20140150878A1 (en) * | 2012-11-30 | 2014-06-05 | Applied Materials, Inc. | Process chamber gas flow apparatus, systems, and methods |
CN107974668A (zh) * | 2013-02-20 | 2018-05-01 | 应用材料公司 | 基座组件及处理室 |
US20160281228A1 (en) * | 2013-03-22 | 2016-09-29 | Beneq Oy | Apparatus for processing two or more substrates in a batch process |
CN105934837A (zh) * | 2014-01-21 | 2016-09-07 | 应用材料公司 | 允许低压工具替换的原子层沉积处理腔室 |
JP2017504725A (ja) * | 2014-01-21 | 2017-02-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 低圧ツール交換を可能にする原子層堆積処理チャンバ |
CN107208267A (zh) * | 2015-01-14 | 2017-09-26 | 斯密特热能解决私人有限公司 | 原子层沉积设备 |
US20170191160A1 (en) * | 2015-12-31 | 2017-07-06 | Lam Research Corporation | Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus |
JP2016174158A (ja) * | 2016-04-08 | 2016-09-29 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US20180096874A1 (en) * | 2016-10-03 | 2018-04-05 | Applied Materials, Inc. | Dynamic leveling process heater lift |
Also Published As
Publication number | Publication date |
---|---|
US11970773B2 (en) | 2024-04-30 |
US20220275512A1 (en) | 2022-09-01 |
CN114008241B (zh) | 2024-01-26 |
EP3959355A1 (en) | 2022-03-02 |
FI130051B (en) | 2023-01-13 |
EP3959355A4 (en) | 2022-05-25 |
WO2020216994A1 (en) | 2020-10-29 |
FI20195334A1 (en) | 2020-10-26 |
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