CN113990939A - Novel RC-IGBT structure for inhibiting Snapback phenomenon - Google Patents

Novel RC-IGBT structure for inhibiting Snapback phenomenon Download PDF

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Publication number
CN113990939A
CN113990939A CN202111246135.2A CN202111246135A CN113990939A CN 113990939 A CN113990939 A CN 113990939A CN 202111246135 A CN202111246135 A CN 202111246135A CN 113990939 A CN113990939 A CN 113990939A
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igbt
region
snapback phenomenon
novel
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伍伟
李岩松
陈勇
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The novel RC-IGBT structure for inhibiting the Snapback phenomenon is characterized in that on the basis of a conventional RC-IGBT structure, a material of a collector region on the back of the RC-IGBT is changed, so that a diode region is integrated in a body, a heterojunction is formed between a new N-type collector and an N-type field stop layer, an electronic potential well is formed at the heterojunction by means of the energy band characteristic of the heterojunction, an electronic passage existing between the N-type collector and the field stop layer of the diode region in the RC-IGBT is blocked, the RC-IGBT is prevented from working in a single-pole conductive mode when being just started and directly entering a double-pole conductive mode, and the Snapback phenomenon of the RC-IGBT in the starting process is inhibited.

Description

Novel RC-IGBT structure for inhibiting Snapback phenomenon
Technical Field
The invention relates to the field of semiconductors, in particular to a novel RC-IGBT structure for inhibiting a Snapback phenomenon.
Background
In order to reduce the size and production cost of the power device, researchers have proposed that a Reverse freewheeling diode is parasitic inside an IGBT, so as to research a Reverse Conducting-IGBT (RC-IGBT). The integrated structure enables the RC-IGBT to have the characteristics of low cost, high power density and high reliability, and has great prospect in medium and high power electronic application. However, the conventional RC-IGBT device has a voltage folding phenomenon, i.e., Snapback phenomenon, in the IGBT operating mode due to the internal parasitic MOSFET, which is caused by a negative resistance effect due to the sudden decrease of the resistivity when the operating mode of the device is switched.
The voltage folding phenomenon of the RC-IGBT can cause uneven current distribution inside and among devices, and when the RC-IGBT devices are used in parallel, partial RC-IGBT devices can not be conducted to enter an IGBT working mode, so that the stability of the devices and a system is seriously influenced.
Disclosure of Invention
Aiming at the requirement of eliminating the Snapback phenomenon of the RC-IGBT in the starting process, the invention provides a novel RC-IGBT structure for inhibiting the Snapback phenomenon.
The technical scheme adopted by the invention for solving the technical problems is as follows: a novel RC-IGBT structure for inhibiting Snapback phenomenon comprises a P-type collector region (1) and an N-type collector region (2), an N-type buffer layer (3) and an N-type drift region (4) which are arranged above the collector regions (1) and (2), a carrier storage layer (5) and a P-type base region (6), wherein an N + type emitting region (7) and a P + type emitting region (8) are arranged on the P-type base region (6), and SiO is arranged between the N + type emitting regions (7)2A gate structure consisting of an oxide layer (9) and polysilicon (10).
Compared with a conventional RC-IGBT structure, the technical scheme of the invention mainly aims at improving the back structure of the RC-IGBT, changes the materials of the P type collector region (1) and the N type collector region (2), and replaces the original Si material with the SiC material.
Further, in the diode region, a heterojunction is formed at the interface between the newly replaced SiC material N-type collector and the N-type field stop layer, and according to the energy band characteristics of the heterojunction, an electron potential well from N-Si to N-SiC is formed to block the original electron path between the field stop layer and the N-type collector region when the device is in forward conduction.
Furthermore, after the heterojunction blocks an electronic path between the field stop layer and the N-type collector region, the device can not work in a unipolar conduction mode but directly enter a bipolar conduction mode, and therefore the Snapback phenomenon is restrained.
Furthermore, the conventional RC-IGBT device inhibits the Snapback phenomenon by increasing the length of the P-type collector region, so that the MOSFET can be started as soon as possible, but the current distribution in the device is more uneven.
The invention has the beneficial effects that: the novel RC-IGBT structure for inhibiting the Snapback phenomenon is characterized in that on the basis of a conventional RC-IGBT structure, a material of a collector region on the back of the RC-IGBT is changed, so that a diode region is integrated in a body, a heterojunction is formed between a new N-type collector and an N-type field stop layer, an electronic potential well is formed at the heterojunction by means of the energy band characteristic of the heterojunction, an electronic passage existing between the N-type collector and the field stop layer of the diode region in the RC-IGBT is blocked, the RC-IGBT is prevented from working in a single-pole conductive mode when being just started and directly entering a double-pole conductive mode, and the Snapback phenomenon of the RC-IGBT in the starting process is inhibited.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of a conventional RC-IGBT structure;
FIG. 3 is a schematic representation of a heterojunction energy band;
fig. 4 is a schematic diagram showing the relationship between current density and voltage in the turn-on process of the conventional RC-IGBT and the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
The invention provides a novel RC-IGBT structure for inhibiting Snapback phenomenon, which comprises a cell structure, a carrier storage layer (5), a P-type collector region (1), an N-type collector region (2), an N-type buffer layer (3), an N-type drift region (4), a carrier storage layer (5) and a P-type base region(6) The P-type base region (6) is provided with an N + type emitter region (7) and a P + type emitter region (8), and SiO is arranged between the N + type emitter regions (7)2A gate structure consisting of an oxide layer (9) and polysilicon (10).
Compared with a conventional RC-IGBT structure, the scheme of the invention mainly aims at improving the back structure of the RC-IGBT, changes the collector region material of the diode region in the conventional RC-IGBT body, and uses the collector region made of SiC material to replace the original silicon-based collector region. The Snapback phenomenon is generated by the conventional RC-IGBT because when the RC-IGBT is turned on in a forward direction, the internal parasitic MOSFET is directly turned on, but a PN collecting junction between a P type collecting region and a field stop layer of the IGBT needs to be 0.7V to be turned on. When the voltage of a collector junction reaches 0.7V, a large number of holes are injected into a P-type collector, the RC-IGBT is converted from a unipolar conduction mode to a bipolar conduction mode, the resistance is suddenly reduced, and the negative resistance phenomenon of current and voltage, namely the voltage folding phenomenon, is presented. However, after the device structure is modified according to the scheme, a heterojunction is formed between the N-type collector region and the field stop layer, as shown in fig. 3, an obvious electron potential well and potential barrier exist between the field stop layer and the N-type collector of SiC, and electrons are prevented from entering the N-type collector, so that the Snapback phenomenon is suppressed.
In one embodiment, the temperature is room temperature, the gate voltage is 15V, and the turn-on process of the conventional RC-IGBT and the invention in the IGBT operating mode is monitored, as shown in fig. 4, the P-type collector region of the invention is 80um in length, and the P-type collector region of the conventional RC-IGBT is 140um in length. Even if the length of a P-type collector region is increased, the conventional RC-IGBT still has a Snapback phenomenon when being turned on, and the voltage value at the turning point is 2.04V. However, the RC-IGBT device does not observe obvious voltage folding phenomenon when being opened in the forward direction, so that the scheme can successfully inhibit the Snapback phenomenon and improve the reliability of the device and a power supply system.
Furthermore, the conventional RC-IGBT device inhibits the Snapback phenomenon by increasing the length of the P-type collector region, so that the MOSFET can be started as soon as possible, but the current distribution in the device is more uneven.
In summary, the present invention provides a novel RC-IGBT structure for suppressing Snapback phenomenon, which changes the material of the back collector region of the RC-IGBT on the basis of the conventional RC-IGBT structure, so that a diode region is integrated in the body, a heterojunction is formed between the new N-type collector and the N-type field stop layer, an electron potential well is formed at the heterojunction by virtue of the energy band characteristics of the heterojunction, an electron path existing between the N-type collector and the field stop layer of the diode region in the RC-IGBT is blocked, the RC-IGBT is prevented from working in a unipolar conductive mode when just turned on, but directly entering a bipolar conductive mode, and the Snapback phenomenon of the RC-IGBT in the turn-on process is suppressed.

Claims (4)

1. A novel RC-IGBT structure for inhibiting Snapback phenomenon comprises a P-type collector region (1) and an N-type collector region (2), an N-type buffer layer (3) and an N-type drift region (4) which are arranged above the collector regions (1) and (2), a carrier storage layer (5) and a P-type base region (6), wherein an N + type emitting region (7) and a P + type emitting region (8) are arranged on the P-type base region (6), and SiO is arranged between the N + type emitting regions (7)2A gate structure consisting of an oxide layer (9) and polysilicon (10).
2. The Snapback phenomenon suppression novel RC-IGBT structure according to claim 1, wherein the back structure part of the device changes the materials of the P-type collector region (1) and the N-type collector region (2), and the original Si material is replaced by SiC material.
3. The novel RC-IGBT structure for suppressing Snapback phenomenon as claimed in claim 1 and 2, wherein in the diode region, the N-type collector of new SiC material forms a heterojunction with the N-type field stop layer at the interface, and according to the energy band characteristics of the heterojunction, an electron potential well from N-Si to N-SiC is formed to block the original electron path between the field stop layer and the N-type collector region when the device is turned on in the forward direction.
4. The novel RC-IGBT structure for inhibiting Snapback phenomenon according to claim 1, 2 and 3, characterized in that after the heterojunction blocks the electron path between the field stop layer and the N-type collector region, the device will not work in the unipolar conduction mode, but directly enter the bipolar conduction mode, thereby inhibiting Snapback phenomenon.
CN202111246135.2A 2021-10-26 2021-10-26 Novel RC-IGBT structure for inhibiting Snapback phenomenon Pending CN113990939A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114551580A (en) * 2022-03-01 2022-05-27 江苏卓远半导体有限公司 Silicon carbide and silicon heterojunction groove reverse conducting IGBT
CN114551581A (en) * 2022-03-01 2022-05-27 江苏卓远半导体有限公司 Silicon carbide and silicon heterojunction reverse conducting IGBT

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108122971A (en) * 2017-12-25 2018-06-05 电子科技大学 A kind of RC-IGBT devices and preparation method thereof
CN108649068A (en) * 2018-06-29 2018-10-12 中国科学院微电子研究所 RC-IGBT device and preparation method thereof
CN110797403A (en) * 2019-10-18 2020-02-14 上海睿驱微电子科技有限公司 RC-IGBT semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108122971A (en) * 2017-12-25 2018-06-05 电子科技大学 A kind of RC-IGBT devices and preparation method thereof
CN108649068A (en) * 2018-06-29 2018-10-12 中国科学院微电子研究所 RC-IGBT device and preparation method thereof
CN110797403A (en) * 2019-10-18 2020-02-14 上海睿驱微电子科技有限公司 RC-IGBT semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114551580A (en) * 2022-03-01 2022-05-27 江苏卓远半导体有限公司 Silicon carbide and silicon heterojunction groove reverse conducting IGBT
CN114551581A (en) * 2022-03-01 2022-05-27 江苏卓远半导体有限公司 Silicon carbide and silicon heterojunction reverse conducting IGBT

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