CN113990926B - RC-IGBT structure for reducing reverse recovery loss of integrated diode - Google Patents
RC-IGBT structure for reducing reverse recovery loss of integrated diode Download PDFInfo
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- CN113990926B CN113990926B CN202111246272.6A CN202111246272A CN113990926B CN 113990926 B CN113990926 B CN 113990926B CN 202111246272 A CN202111246272 A CN 202111246272A CN 113990926 B CN113990926 B CN 113990926B
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- 238000011084 recovery Methods 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Abstract
The invention discloses an RC-IGBT structure for reducing reverse recovery loss of an integrated diode, which etches part SiO between an IGBT gate and an integrated diode anode of an integrated diode region of the RC-IGBT on the basis of a conventional RC-IGBT structure 2 And the oxidation layer is used for shorting the P-type base region and the P+ emission region of the IGBT device by using the barrier layer metal, and meanwhile, the length of the P+ emission region in the diode region is shortened, so that the effective carrier concentration of the anode of the integrated diode is reduced, the carrier injection efficiency of the anode of the integrated diode is reduced, the number of carriers stored in the N drift region in diode conduction is reduced, and finally, the purposes of reducing the reverse recovery current peak value and the reverse recovery loss of the integrated diode are achieved.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to an RC-IGBT structure for reducing reverse recovery loss of an integrated diode.
Background
In order to reduce the size and production cost of the power device, the scholars propose to parasitic the reverse freewheeling diode inside the IGBT, and thus research into reverse conducting IGBTs (Reverse Conducting-IGBTs, RC-IGBTs). RC-IGBT is widely studied at present, has complex trade-off relation, and is required to realize IGBT characteristics (including the conduction voltage drop V of the IGBT CEsat Turn-off loss E off ) With parasitic diode characteristics in the body (including the on-voltage V of the diode F And reverse recovery loss E of diode rr ) A trade-off between these. In the process that the flywheel diode is switched from conduction to blocking state, the diode cannot immediately enter the blocking state after reverse pressurization, but can temporarily maintain the conduction state and generate reverse recovery current, and after carriers in the diode body are completely extracted, the reverse recovery current is reduced to 0, and the diode is turned off.
The loss of the RC-IGBT includes the loss in the IGBT operating mode and the loss in the diode operating mode. And the loss in the diode operation mode is mainly the reverse recovery loss at the time of turn-off. Therefore, to reduce the diode loss in RC-IGBTs, it is mainly necessary to address the diode loss during reverse recovery.
Disclosure of Invention
Aiming at the requirement of reducing the reverse recovery loss of a diode in the use process of the RC-IGBT, the invention provides an RC-IGBT structure for reducing the reverse recovery loss of an integrated diode.
The technical scheme adopted by the invention for solving the technical problems is as follows: the RC-IGBT structure for reducing reverse recovery loss of the integrated diode comprises a P-type collector region (1) and an N-type collector region (2), an N-type buffer layer (3) and an N-type drift region (4) which are positioned above the collector regions (1) and (2), a carrier storage layer (5) and a P-type base region (6), wherein an N+ type emitter region (7) and a P+ type emitter region (8) are arranged on the P-type base region (6), and the P+ type emitter regions (8) on two sides of a grid electrode of the integrated diode region are discrete small units. A barrier metal layer is deposited over the cells, and Al metal is deposited over the barrier metal layer.
Compared with a conventional RC-IGBT structure, the technical scheme of the invention is mainly aimed at improving the structure of the front electrode region, and etching away part of SiO at the contact position of the grid electrode and the collector electrode in the diode region corresponding to the N-type collector region 2 The oxide layer is replaced with a barrier metal.
Further, the etched SiO 2 The thickness of the area replaced by the barrier layer metal exceeds the thickness of the P+ type emitter region (8), so that the P type base region (6) can be connected with a collector electrode, and the P+ type emitter region (8) is short-circuited.
Further, the etched SiO is not directly etched by Al metal 2 Instead of the oxide layer, a barrier metal is deposited between the cell and the Al metal to avoid Al and Si from being mutually fused.
Further, an SiO is deposited on the upper part of the IGBT region corresponding to the P-type collector electrode 2 And a region for preventing the gate from being shorted to the emitter.
Further, the p+ type emitter region (8) of the diode region is a discrete small unit, separated and shortened and placed on both sides of the gate.
The beneficial effects of the invention are as follows: the invention provides an RC-IGBT structure for reducing reverse recovery loss of an integrated diode. The structure is based on a conventional RC-IGBT structure, and a part of SiO between an IGBT gate and an integrated diode anode of an integrated diode region of the RC-IGBT is etched 2 Oxide layer and P-type base region and P+ emitter of IGBT device by using barrier layer metalThe emitter region is short-circuited, and meanwhile, the length of a P+ emitter region in the diode region is shortened, so that the effective carrier concentration of the anode of the integrated diode is reduced, the carrier injection efficiency of the anode of the integrated diode is reduced, the number of carriers stored in the N drift region in diode conduction is reduced, and the purposes of reducing the reverse recovery current peak value and the reverse recovery loss of the integrated diode are finally achieved.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of a conventional RC-IGBT structure;
fig. 3 is a schematic diagram of the reverse recovery current of a conventional RC-IGBT and the integrated diode of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
The invention provides an RC-IGBT structure for reducing reverse recovery loss of an integrated diode, which comprises a P-type collector region (1) and an N-type collector region (2), an N-type buffer layer (3) and an N-type drift region (4) which are positioned above the collector regions (1) and (2), a carrier storage layer (5) and a P-type base region (6), wherein an N+ type emitter region (7) and a P+ type emitter region (8) are arranged on the P-type base region (6), and the P+ type emitter regions (8) at two sides of a grid electrode of the integrated diode region are discrete small units. A barrier metal layer is deposited over the cells, and Al metal is deposited over the barrier metal layer.
Compared with a conventional RC-IGBT structure, the scheme of the invention is mainly aimed at improving the structure of the front electrode region, and etching away part of SiO at the contact position of the grid electrode and the collector electrode in the diode region corresponding to the N-type collector region 2 The oxide layer is replaced with a barrier metal so that the P-type base region can be directly connected to the emitter electrode. In the conventional RC-IGBT structure, a P-type base region (6) and a P+ type emitter region(8) Since an electron barrier exists at the contact surface of the P-type base region (6), carriers are accumulated at the interface, and the hole concentration in the P-type base region (6) increases, thereby further increasing the hole injection efficiency of the P-type base region (6) into the N-type drift region (4). After the structure is improved according to the scheme, as the barrier layer metal is directly connected with the P-type base region, other passages which span beyond the potential barrier are provided for electrons, the P+ type emission region (8) is correspondingly shorted, and the transverse length of the P+ type emission region is shortened, namely the length of a region where carrier accumulation can occur is shortened. Therefore, the carrier accumulation effect on the contact surface is eliminated, the hole concentration distribution in the P-type base region (6) is changed, the hole injection efficiency of the P region is reduced, and the minority carrier quantity in the N-type drift region (4) in the reverse recovery process is further reduced, so that the reverse recovery current peak value and the reverse recovery loss are reduced.
In a first embodiment, compared with a conventional RC-IGBT, the scheme of the invention ensures that the hole concentration of the P-type base region (6) at the edge of the barrier metal is 3.4 x 10 17 Drop to 1.58 x 10 17 . And the hole concentration is 1.6×10 near the lower edge of the gate 17 Drop to 7.4 x 10 16 . The structure can effectively improve the hole concentration distribution of the P-type base region (6), thereby reducing the hole injection efficiency of the P region.
In one embodiment, as shown in fig. 3, during reverse recovery under the same test conditions, the peak value of the reverse recovery current of the diode of the proposed structure is-1.24A, and the reverse recovery current of the diode of the conventional RC-IGBT is-2.37A. It can be seen that the improvement of the structure effectively reduces the peak value of reverse recovery current, thereby effectively reducing the reverse recovery loss E rr 。
Further, the etched SiO 2 The thickness of the area replaced by the barrier layer metal exceeds the thickness of the P+ type emitter region (8), so that the P type base region (6) can be connected with a collector electrode, and the P+ type emitter region (8) is short-circuited.
Further, the metal replaces SiO 2 The thickness d of the oxide layer region also affects the hole concentration in the P-type base region, thereby affecting the magnitude of the reverse recovery loss.
Further, the etched SiO is not directly etched by Al metal 2 Instead of the oxide layer, a barrier metal is deposited between the cell and the Al metal to avoid Al and Si from being mutually fused.
Further, an SiO is deposited on the upper part of the IGBT region corresponding to the P-type collector electrode 2 And a region for preventing the gate from being shorted to the emitter.
Further, the p+ type emitter region (8) of the diode region is a discrete small unit, separated and shortened and placed on both sides of the gate.
In summary, the invention provides an RC-IGBT structure for reducing reverse recovery loss of an integrated diode. The structure is based on a conventional RC-IGBT structure, and a part of SiO between an IGBT gate and an integrated diode anode of an integrated diode region of the RC-IGBT is etched 2 And the oxidation layer is used for shorting the P-type base region and the P+ emission region of the IGBT device by using the barrier layer metal, and meanwhile, the length of the P+ emission region in the diode region is shortened, so that the effective carrier concentration of the anode of the integrated diode is reduced, the carrier injection efficiency of the anode of the integrated diode is reduced, the number of carriers stored in the N drift region in diode conduction is reduced, and finally, the purposes of reducing the reverse recovery current peak value and the reverse recovery loss of the integrated diode are achieved.
Claims (5)
1. The cell structure of the RC-IGBT structure for reducing the reverse recovery loss of the integrated diode comprises a P-type collector region (1) and an N-type collector region (2), an N-type buffer layer (3) and an N-type drift region (4) which are positioned above the collector regions (1) and (2), a carrier storage layer (5) and a P-type base region (6), wherein the P-type base region (6) is provided with an N+ type emitter region (7) and a P+ type emitter region (8), and the IGBT region (9) and the integrated diode region (10) which are arranged on the left side are divided by taking the boundary line between the P-type collector region (1) and the N-type collector region (2) as an axis; a barrier metal layer is deposited over the cells, and Al metal is deposited over the barrier metal layer.
2. The RC-IGBT structure for reducing integrated diode reverse recovery losses according to claim 1, characterized in that the IGBT gate and the integrated diode region (10) of the RC-IGBT are etchedPart of SiO between anode of polar tube 2 And an oxide layer, which is replaced by a barrier metal.
3. RC-IGBT structure for reducing reverse recovery loss of integrated diode according to claims 1 and 2 characterized by the etched SiO 2 The thickness of the area replaced by the barrier metal exceeds the thickness of the P+ type emitting region (8).
4. The RC-IGBT structure for reducing reverse recovery loss of integrated diode according to claims 1 and 2, characterized in that the etched SiO is not directly using Al metal pairs 2 Instead of an oxide layer, a barrier metal is deposited between the cells and the Al metal, the barrier metal being titanium.
5. The RC-IGBT structure according to claim 1, characterized in that the p+ -type emitter region (8) of the integrated diode region (10) is a discrete small cell and is located on both sides of the gate.
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| CN117254784B (en) * | 2023-11-13 | 2024-03-26 | 广州市艾佛光通科技有限公司 | Thin film bulk acoustic resonator and preparation method of metal electrode thereof |
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| CN102544084A (en) * | 2012-03-15 | 2012-07-04 | 电子科技大学 | Insulated gate bipolar translator (IGBT) device with two short-circuit positive electrodes |
| JP2013012783A (en) * | 2012-10-10 | 2013-01-17 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
| CN105047704A (en) * | 2015-06-30 | 2015-11-11 | 西安理工大学 | High voltage IGBT having communicated storage layer and manufacturing method |
| CN105428408A (en) * | 2015-12-22 | 2016-03-23 | 电子科技大学 | Field-stop trench gate IGBT device |
| CN110797403A (en) * | 2019-10-18 | 2020-02-14 | 上海睿驱微电子科技有限公司 | RC-IGBT semiconductor device |
| JP2021077911A (en) * | 2021-02-08 | 2021-05-20 | 三菱電機株式会社 | Semiconductor device, semiconductor device manufacturing method, and power conversion device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7068994B2 (en) * | 2018-11-26 | 2022-05-17 | 三菱電機株式会社 | Semiconductor device |
| JP7241656B2 (en) * | 2019-09-25 | 2023-03-17 | 三菱電機株式会社 | Semiconductor device and its manufacturing method |
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|---|---|---|---|---|
| CN102544084A (en) * | 2012-03-15 | 2012-07-04 | 电子科技大学 | Insulated gate bipolar translator (IGBT) device with two short-circuit positive electrodes |
| JP2013012783A (en) * | 2012-10-10 | 2013-01-17 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
| CN105047704A (en) * | 2015-06-30 | 2015-11-11 | 西安理工大学 | High voltage IGBT having communicated storage layer and manufacturing method |
| CN105428408A (en) * | 2015-12-22 | 2016-03-23 | 电子科技大学 | Field-stop trench gate IGBT device |
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