CN113990926A - RC-IGBT structure for reducing reverse recovery loss of integrated diode - Google Patents
RC-IGBT structure for reducing reverse recovery loss of integrated diode Download PDFInfo
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- CN113990926A CN113990926A CN202111246272.6A CN202111246272A CN113990926A CN 113990926 A CN113990926 A CN 113990926A CN 202111246272 A CN202111246272 A CN 202111246272A CN 113990926 A CN113990926 A CN 113990926A
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- 238000011084 recovery Methods 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 5
- 238000004904 shortening Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Abstract
The invention discloses an RC-IGBT structure for reducing reverse recovery loss of an integrated diode, which is characterized in that on the basis of a conventional RC-IGBT structure, partial SiO between an IGBT grid electrode of an integrated diode area of the RC-IGBT and an anode of the integrated diode is etched2And the oxide layer is used for short-circuiting the P-type base region and the P + emission region of the IGBT device by using the barrier layer metal, and simultaneously shortening the length of the P + emission region in the diode region, so that the effective carrier concentration of the anode of the integrated diode is reduced, the injection efficiency of the anode carrier of the integrated diode is reduced, the number of carriers stored in the N drift region in the conduction of the diode is reduced, and the purposes of reducing the reverse recovery current peak value and the reverse recovery loss of the integrated diode are finally achieved.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to an RC-IGBT structure for reducing reverse recovery loss of an integrated diode.
Background
In order to reduce the size and production cost of the power device, researchers have proposed that a Reverse freewheeling diode is parasitic inside an IGBT, so as to research a Reverse Conducting-IGBT (RC-IGBT). RC-IGBT is widely researched at present, and has a complex trade-off relation to realize the IGBT characteristics (including the turn-on voltage drop V of the IGBT)CEsatAnd turn-off loss Eoff) And the in-body parasitic diode characteristics (including the turn-on voltage V of the diode)FAnd of diodesReverse recovery loss Err) The trade-off between the two is that the integrated diode fast recovery characteristics are required in many applications. In the process of converting the diode from the conduction state to the blocking state, the diode cannot immediately enter the blocking state after reverse pressurization, but can temporarily maintain the conduction state and generate a reverse recovery current, and when the current carriers in the diode body are completely extracted, the reverse recovery current is reduced to 0, and the diode is turned off.
The losses of the RC-IGBT include losses in the IGBT operating mode and losses in the diode operating mode. While the losses in the diode mode of operation dominate the reverse recovery losses at turn-off. Therefore, the loss of the diode in the RC-IGBT is to be reduced, mainly aiming at the loss of the diode in the reverse recovery process.
Disclosure of Invention
Aiming at the requirement of reducing the reverse recovery loss of the diode in the use process of the RC-IGBT, the invention provides the RC-IGBT structure for reducing the reverse recovery loss of the integrated diode.
The technical scheme adopted by the invention for solving the technical problems is as follows: a cell structure of the RC-IGBT structure comprises a P-type collector region (1), an N-type collector region (2), an N-type buffer layer (3) and an N-type drift region (4) which are located above the collector regions (1) and (2), a carrier storage layer (5) and a P-type base region (6), wherein an N + type emitting region (7) and a P + type emitting region (8) are arranged on the P-type base region (6). And a layer of barrier metal is deposited above the unit cell, and Al metal is arranged above the barrier metal.
Compared with a conventional RC-IGBT structure, the technical scheme of the invention mainly aims at improving the structure of the front electrode area, and etching off part of SiO at the contact position of the grid and the collector in the diode area corresponding to the N-type collector area2The oxide layer is replaced by a barrier metal and the length of the emitter region is reduced.
Further, the etched SiO2The thickness of the area replaced by the barrier metal exceeds the thickness of the P + type emitter region (8), so that the P type base region (6) can be connected with the collector to short-circuit the P + type emitter region (8).
Further, not straightUsing Al metal to etch SiO2The oxide layer is replaced by a barrier metal layer deposited between the cells and the Al metal to prevent the Al and Si from melting.
Furthermore, the P + type emitter region (8) of the diode region is a small discrete unit, and is placed on two sides of the grid after being separated and shortened in length.
The invention has the beneficial effects that: the invention provides an RC-IGBT structure for reducing reverse recovery loss of an integrated diode. According to the structure, on the basis of a conventional RC-IGBT structure, part of SiO between an IGBT grid electrode of an integrated diode region of the RC-IGBT and an anode of the integrated diode is etched2And the oxide layer is used for short-circuiting the P-type base region and the P + emission region of the IGBT device by using the barrier layer metal, and simultaneously shortening the length of the P + emission region in the diode region, so that the effective carrier concentration of the anode of the integrated diode is reduced, the injection efficiency of the anode carrier of the integrated diode is reduced, the number of carriers stored in the N drift region in the conduction of the diode is reduced, and the purposes of reducing the reverse recovery current peak value and the reverse recovery loss of the integrated diode are finally achieved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of a conventional RC-IGBT structure;
fig. 3 is a schematic diagram of a conventional RC-IGBT and the integrated diode reverse recovery current of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
The invention provides an RC-IGBT structure for reducing reverse recovery loss of an integrated diode, which comprises a cell structure, a carrier storage layer (5), a P-type collector region (1), an N-type collector region (2), an N-type buffer layer (3), an N-type drift region (4), a carrier storage layer (5) and a P-type base region (6), wherein the N-type collector region (1) and the N-type collector region (2) are positioned above the collector regions (1) and (2), and the P-type base region (6) is provided with an N + type emitting region (7) and a P + type emitting region (8). And a layer of barrier metal is deposited above the unit cell, and Al metal is arranged above the barrier metal.
Compared with a conventional RC-IGBT structure, the scheme of the invention mainly aims at improving the structure of the front electrode area, and etching off part of SiO at the contact position of the grid and the collector in the diode area corresponding to the N-type collector area2The oxide layer is replaced by barrier metal, so that the P-type base region can be directly connected with the emitter electrode, and the length of the emitter region is greatly reduced. In a conventional RC-IGBT structure, an electron barrier exists at the contact surface of a P-type base region (6) and a P + -type emitter region (8), so that carriers can be accumulated at the interface, the hole concentration in the P-type base region (6) is increased, and the hole injection efficiency of the P-type base region (6) to an N-type drift region (4) is further increased. After the structure is improved according to the scheme, as the barrier layer metal is directly connected with the P-type base region, other paths beyond the potential barrier are provided for electrons, the P + -type emitting region (8) is equivalently short-circuited, and the transverse length of the P + -type emitting region is shortened, namely the length of the region where carrier accumulation can occur is shortened. Therefore, the carrier accumulation effect on the contact surface is eliminated, the hole concentration distribution in the P-type base region (6) is changed, the hole injection efficiency of the P region is reduced, the minority carrier storage quantity in the N-type drift region (4) in the conduction process of the integrated diode is further reduced, and the reverse recovery current peak value and the reverse recovery loss are reduced.
In a primary embodiment, compared with the conventional RC-IGBT, the scheme of the invention ensures that the hole concentration of the P-type base region (6) at the edge of the barrier metal is 3.4-1017The drop is 1.58 x 1017. And near the lower edge of the grid, the hole concentration is from 1.6 x 1017The drop is 7.4 x 1016. The structure effectively improves the hole concentration distribution of the P-type base region (6), thereby reducing the hole injection efficiency of the P region.
In one embodiment, as shown in fig. 3, the diode reverse recovery current peak of the proposed structure is generated during the reverse recovery process under the same test conditionsThe value is-1.24A and the diode reverse recovery current of the conventional RC-IGBT is-2.37A. Therefore, the improvement of the structure effectively reduces the peak value of the reverse recovery current, thereby effectively reducing the reverse recovery loss Err。
Further, the etched SiO2The thickness of the area replaced by the barrier metal exceeds the thickness of the P + type emitter region (8), so that the P type base region (6) can be connected with the collector to short-circuit the P + type emitter region (8).
Further, the metal replaces SiO2The thickness d of the oxide region also affects the hole concentration in the P-type base region and thus the magnitude of the reverse recovery loss.
Further, the etched SiO is not directly etched with Al metal2The oxide layer is replaced by a barrier metal layer deposited between the cells and the Al metal to prevent the Al and Si from melting.
Furthermore, the P + type emitter region (8) of the diode region is a small discrete unit, and is placed on two sides of the grid after being separated and shortened in length.
In summary, the invention provides an RC-IGBT structure that reduces reverse recovery loss of an integrated diode. According to the structure, on the basis of a conventional RC-IGBT structure, part of SiO between an IGBT grid electrode of an integrated diode region of the RC-IGBT and an anode of the integrated diode is etched2And the oxide layer is used for short-circuiting the P-type base region and the P + emission region of the IGBT device by using the barrier layer metal, and simultaneously shortening the length of the P + emission region in the diode region, so that the effective carrier concentration of the anode of the integrated diode is reduced, the injection efficiency of the anode carrier of the integrated diode is reduced, the number of carriers stored in the N drift region in the conduction of the diode is reduced, and the purposes of reducing the reverse recovery current peak value and the reverse recovery loss of the integrated diode are finally achieved.
Claims (5)
1. A cell structure of the RC-IGBT structure comprises a P-type collector region (1), an N-type collector region (2), an N-type buffer layer (3) and an N-type drift region (4) which are located above the collector regions (1) and (2), a carrier storage layer (5) and a P-type base region (6), wherein an N + type emitting region (7) and a P + type emitting region (8) are arranged on the P-type base region (6). And a layer of barrier metal is deposited above the unit cell, and Al metal is arranged above the barrier metal.
2. The RC-IGBT structure for reducing reverse recovery loss of integrated diode according to claim 1, wherein a part of SiO between the IGBT gate and the anode of the integrated diode in the integrated diode region of the RC-IGBT is etched2And the oxide layer is replaced by barrier metal.
3. RC-IGBT structure for reducing reverse recovery losses of integrated diodes according to claims 1 and 2, characterized in that etching SiO2And the thickness of the region replaced by the barrier metal exceeds the thickness of the P + type emitter region (8).
4. An RC-IGBT structure with reduced reverse recovery losses of integrated diodes according to claims 1 and 2, characterized in that the etched SiO is not directly etched with Al metal2Instead of an oxide layer, a barrier metal is deposited between the cells and the Al metal, typically titanium.
5. An RC-IGBT structure for reducing reverse recovery loss of integrated diode according to claim 1, characterized in that the P + type emitter region (8) of the diode region is a small discrete unit, separated and shortened in length and then placed on both sides of the gate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023185712A1 (en) * | 2022-03-30 | 2023-10-05 | 华为数字能源技术有限公司 | Semiconductor device, and related circuit, chip, electronic device and preparation method |
| CN117254784A (en) * | 2023-11-13 | 2023-12-19 | 广州市艾佛光通科技有限公司 | Thin film bulk acoustic resonator and preparation method of metal electrode thereof |
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| JP2021077911A (en) * | 2021-02-08 | 2021-05-20 | 三菱電機株式会社 | Semiconductor device, semiconductor device manufacturing method, and power conversion device |
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